TWI728322B - Plasma confinement element, processing device containing the same, and capacitance control method thereof - Google Patents

Abstract

The invention discloses a plasma confinement element and a processing device where it is located. The plasma processing device includes a reaction chamber. An electrostatic chuck for supporting a substrate is arranged in the reaction chamber. The plasma confinement component is located in the electrostatic chuck and the reaction chamber. Between the side walls of the plasma confinement ring and the U-shaped grounding ring; the grounding ring includes a grounding shield ring, and the grounding shielding ring is located between the plasma confinement ring and the side wall of the reaction chamber; the side wall of the reaction chamber is provided with a transfer sheet The gate, the grounding shield ring is used to protect the electric field between the plasma confinement ring and the side wall of the reaction chamber from the film gate. The U-shaped grounding ring of the present invention keeps the capacitance value of the plasma confinement ring unchanged during the adjustment process of the electrode plate spacing; not only can ensure the consistency and stability of the etching performance process of the electrode plate spacing adjustment process, but also can eliminate the cavity transfer. The asymmetry factor of the gate to the etching performance can also ensure the reliability of plasma confinement near the pass gate.

Description

Plasma confinement element, processing device containing the same, and capacitance control method thereof

The invention relates to the field of plasma etching, in particular to a plasma confinement element and a processing device containing the same.

The plasma processing device uses the working principle of a vacuum reaction chamber to process semiconductor substrates and plasma flat substrates. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to start the reaction gas to ignite and maintain the plasma In order to etch the material layer on the surface of the substrate or deposit the material layer on the surface of the substrate respectively, and then process the semiconductor substrate and the plasma flat panel. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and display panels. In capacitive plasma reactors, when RF power is applied to one or both of the two electrodes, A capacitive discharge is formed between a pair of parallel electrodes.

The plasma is diffusive. Although most of the plasma will stay in the processing area between a pair of electrodes, some of the plasma may fill the entire working chamber. For example, the plasma may fill the area outside the processing area below the vacuum reaction chamber. If the plasma reaches these areas, these areas may be corroded, deposited or eroded, which will cause contamination of particles inside the reaction chamber, thereby reducing the reusability of the plasma treatment device, and may shorten the reaction chamber or the reaction chamber The working life of the components. If the plasma is not confined to a certain working area, the charged particles will hit the unprotected area, which will lead to impurities and contamination on the surface of the semiconductor substrate.

Therefore, the industry has been continuously working to generate a more stable plasma that is confined in the processing area. A conventional idea is to use the confinement ring in the plasma confinement element to confine the plasma. The plasma confinement component is located between the electrostatic chuck and the side wall of the vacuum reaction chamber, and is mainly composed of the plasma confinement ring and the ground ring. The confinement ring is located between the inner side of the ground ring and the side wall of the vacuum reaction chamber. In the plasma etching process, the plasma confinement element is mainly used for the confinement of the plasma in the cavity and the radio frequency system and the adjustment of the gas flow in the cavity. The ground capacitance of the plasma confinement ring mainly includes the capacitance generated between the plasma confinement ring and the vertical ground ring part of the ground ring, the capacitance generated between the various grooves of the horizontal ground ring of the ground ring, and the plasma confinement ring and the reaction chamber. The capacitance generated between the sidewalls.

In a plasma processing device, a transfer gate is provided on the side wall of the reaction chamber of the processing device for transferring substrates. Since the transfer gate is an opening on one side of the side wall of the reaction chamber, when the plasma confinement element will follow When the connected bottom plate moves up and down along the side wall of the reaction chamber, the electric field between the plasma confinement ring and the side wall of the reaction chamber is affected by the pass gate, and the ground capacitance of the plasma confinement ring There will be an inflection point and will cause asymmetry in the capacitance distribution (the contribution of the pass gate to the capacitance will change with the movement of the restraint system): (1) The inflection point of the capacitor will affect the continuity of the adjustment effect of the electrode plate spacing on the etching performance; (2) The asymmetry of the capacitance distribution will cause the problems of the uniformity of the etching and the asymmetry of the rate; (3) In addition, when the plasma When the confinement system moves close to or reaches the vicinity of the film gate, the phenomenon of weak or unconfined plasma at the position of the film gate is very likely to occur.

Based on this, the present invention proposes a new plasma confinement system with stable electrical performance in view of the above limitations, which is used to eliminate various unstable and asymmetry factors induced during the movement of the cavity plate.

The purpose of the present invention is to provide a plasma confinement element and a processing device in which it is located. The ground ring in the plasma confinement assembly is designed in a U-shaped structure, that is, a ground shield is added between the liner and the plasma confinement ring The ring can keep the capacitance value of the plasma confinement ring unchanged during the adjustment process of the electrode plate spacing; not only can ensure the consistency and stability of the etching performance process of the electrode plate spacing adjustment, but also eliminate the cavity transfer gate engraving The asymmetry factor of corrosion performance, and the present invention can also ensure the reliability of plasma confinement near the pass gate.

In order to achieve the above-mentioned object, the present invention provides a plasma confinement element for a plasma processing device. The plasma processing device includes a reaction chamber. An electrostatic chuck for supporting a substrate is arranged in the reaction chamber. The component is located between the electrostatic chuck and the side wall of the reaction chamber. The side wall of the reaction chamber is provided with a film gate. The plasma confinement component can move up and down along the side wall of the reaction chamber; the plasma confinement component includes a plasma confinement ring and a ground The grounding ring is provided with a grounding shield ring. The grounding shielding ring is located between the plasma confinement ring and the side wall of the reaction chamber, so that the plasma confinement ring is shielded in the grounding ring to protect the plasma confinement ring and the reaction chamber The electric field between the side walls is not affected by the film gate.

Preferably, the ground ring further includes a horizontal ground ring located below the plasma confinement ring and a vertical ground ring located between the electrostatic chuck and the plasma confinement ring.

Preferably, the vertical grounding ring is connected to an edge ring provided around the electrostatic chuck, and the grounding shield ring and the horizontal grounding ring are grounded separately; the vertical grounding ring, the horizontal grounding ring and the grounding shielding ring are integrated.

Preferably, the ground ring has a U-shaped structure.

Preferably, the plasma confinement ring is located between the vertical ground ring and the ground shield ring, and the plasma confinement ring is located above the horizontal ground ring, so that the ground ring surrounds three sides of the plasma confinement ring.

Preferably, the position in the horizontal direction where the upper surface of the grounding shield ring is located is higher than or equal to the horizontal plane where the upper surface of the plasma confinement ring is located.

Preferably, the wafer transfer door is an opening on one side wall of the reaction chamber, which is used to transfer the wafer between the inside and outside of the reaction chamber.

Preferably, an inner lining is provided between the side wall of the reaction chamber and the grounding shield ring, and an opening matching the film pass door is provided on the inner lining.

Preferably, the electric field between the plasma confinement ring and the side wall of the reaction chamber matches the distance between the grounded shield ring and the plasma confinement ring.

The present invention also provides a plasma processing device, which includes a reaction chamber; the lower part of the reaction chamber is provided with an electrostatic chuck for carrying the substrate and the lower electrode plate is arranged, and the upper part of the reaction chamber includes an upper electrode plate and the electrostatic chuck The plasma confinement element as described above is installed between the side wall of the reaction chamber and the reaction chamber; the electrostatic chuck and its peripheral edge ring can move up and down to adjust the distance between the upper and lower plates of the plasma processing device, and drive the plasma confinement assembly along The plasma confinement component includes a plasma confinement ring and a grounding ring. The grounding ring is provided with a grounding shield ring. The grounding shielding ring is located between the plasma confinement ring and the sidewall of the reaction chamber. The confinement ring is shielded in the ground ring to protect the electric field between the plasma confinement ring and the side wall of the reaction chamber from the influence of the film gate.

The present invention also provides a method for controlling the capacitance of a plasma processing device based on the plasma confinement element as described above. The method includes the following process: a ground ring is provided, and the ground ring is configured as a U-shape with a ground shield ring. structure; A plasma confinement ring is provided to be combined with a ground ring to configure a plasma confinement element; the plasma confinement element is connected to the electrostatic chuck in the reaction chamber; the ground ring surrounds three sides of the plasma confinement ring to make the plasma confinement ring It is shielded in the ground ring; the radio frequency system generates an electric field in the reaction chamber to dissociate the reaction gas into plasma, and the plasma confinement component restricts the plasma and the radio frequency system in the reaction chamber during the plasma etching process, and adjusts Air flow in the reaction chamber; when the electrostatic chuck and the edge ring set around it move to adjust the distance between the upper and lower electrode plates of the plasma processing device, the plasma confinement component moves up and down along the side wall of the reaction chamber, and the plasma confinement ring is covered The cover makes the electric field between it and the side wall of the reaction chamber not affected by the pass gate, and the ground capacitance of the plasma confinement ring remains basically unchanged.

Compared with the prior art, the beneficial effects of the present invention are: the present invention can confine the plasma in a certain working area through the plasma confinement element, prevent impurities and pollution on the surface of the semiconductor substrate, and can realize the generation of confinement in the processing area. More stable plasma. The U-shaped structure ground ring in the plasma confinement element of the present invention enables the plasma confinement ring to be completely covered in the ground ring, so that the capacitance value of the plasma confinement ring remains unchanged during the adjustment process of the electrode plate spacing. The plasma confinement element of the present invention can not only ensure the consistency and stability of the process of adjusting the etching performance of the electrode plate spacing, but also eliminate the asymmetry factor of the etching performance of the cavity transfer gate, and at the same time ensure the transfer gate Reliability of nearby plasma confinement.

2: Passing the film door

3: Lining

4: Grounding ring

6: Plasma confinement ring

100: Vacuum reaction chamber

101: Ground shield ring

110: Pedestal

115: Support electrostatic chuck

120: substrate to be processed

125: Exhaust pump

145: RF power source

150: Gas spray device

160: Gas supply device

C1, C2, C3: The capacitance is

Q1, Q2: Curve

In order to more clearly describe the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. It is obvious that: The drawings in the following description are some embodiments of the present invention. For those with ordinary knowledge in the field, other drawings can be obtained based on these drawings without making progressive labor.

FIG. 1 is a schematic diagram of a plasma processing apparatus based on a plasma confinement element with a grounded shield ring according to the present invention.

FIG. 2 is a schematic diagram of the plasma confinement assembly with grounded shield ring of the present invention.

3 is a schematic diagram showing the comparison of the capacitance value of the plasma confinement component with a grounded shield ring and a plasma confinement component without a grounded shield ring according to the adjustment of the electrode plate spacing according to the present invention.

In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments These are a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person with ordinary knowledge in the field without making progressive work shall fall within the protection scope of the present invention.

It should be noted that in this article, the terms "include", "include", "have" or any other variation thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements It includes not only those elements, but also other elements that are not explicitly listed, or elements inherent to the process, method, article, or terminal device. If there are no more restrictions, the elements defined by the sentence "including..." or "including..." do not exclude the existence of other elements in the process, method, article, or terminal device that includes the elements.

Fig. 1 is a schematic structural diagram of a plasma processing device of the present invention. The plasma processing device includes a vacuum reaction chamber 100, and the vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall made of a metal material. A gas spray device 150 is arranged above the side wall of the reaction chamber, and the gas spray device Connected to the gas supply device 160. The reaction gas in the gas supply device 160 enters the vacuum reaction chamber 100 through the gas spray device 150.

A susceptor 110 supporting an electrostatic chuck 115 is provided under the vacuum reaction chamber 100, and the electrostatic chuck 115 is used to place a substrate 120 to be processed. A film transfer door 2 is provided on the side wall of the vacuum reaction chamber 100, that is, the film transfer door 2 is an opening on a side wall of the reaction chamber 100 for transferring wafers between the inside and outside of the reaction chamber 100. The electrostatic chuck 115 of the present invention includes a lower electrode plate, the gas spray device 150 also serves as an upper electrode plate, and the distance between the two is the electrode plate spacing.

The radio frequency power of the radio frequency power source 145 is applied to the base 110, and an electric field is generated in the vacuum reaction chamber 100 to dissociate the reaction gas into plasma. The plasma contains a large number of electrons, ions, excited atoms, molecules and free radicals, etc. Active particles, the above-mentioned active particles can have a variety of physical and chemical reactions with the surface of the substrate 120 to be processed, so that the topography of the substrate surface is changed, that is, the etching process is completed. An exhaust pump 125 is also provided under the vacuum reaction chamber 100 to discharge the reaction by-products from the vacuum reaction chamber 100.

The present invention proposes a new plasma confinement element for a plasma processing device with stable electrical performance for the plasma confinement and adjustment system of a cavity with an adjustable electrode plate spacing.

As shown in the combination of FIG. 1 and FIG. 2, the plasma processing device of the present invention is provided with a plasma confinement element, which is located between the electrostatic chuck 115 and the side wall of the vacuum reaction chamber 100, and is connected to the electrostatic chuck 115 The peripheral edge ring is connected; as the electrostatic chuck 115 and the edge ring move up and down together, the distance between the electrodes of the plasma processing device changes. The plasma confinement component will move up and down along the side wall of the reaction chamber along with the movement of the edge ring of the electrostatic chuck 115. Wherein, when the electrostatic chuck 115 is first moved to a position below the transfer door 2, the wafer is transferred, and then the electrostatic chuck 115 is moved upward to a suitable position above the transfer door 2.

The plasma confinement assembly of the present invention includes a plasma confinement ring 6 and a ground ring 4. The ground ring 4 includes: a horizontal ground ring located below the plasma confinement ring 6, an electrostatic chuck 115 and a plasma The vertical ground ring between the sub-body confinement rings 6 and the ground shield ring 101 between the plasma confinement ring 6 and the side wall of the reaction chamber.

Among them, one side of the vertical grounding ring is connected to the edge ring provided around the electrostatic chuck 115, the grounding shield ring 101 and the horizontal grounding ring are both grounded parts, and the horizontal grounding ring is provided with a number of slots for exhaust. . The grounding shield ring 101 is an inverted L-shaped structure, and the vertical grounding ring, the horizontal grounding ring, and the grounding shielding ring 101 are integrally arranged, so that the grounding ring 4 forms a U-shaped structure as a whole.

An inner lining 3 is arranged between the side wall of the reaction chamber and the grounding shield ring 101, and the inner lining 3 is used to protect the vacuum reaction chamber wall of the plasma processing apparatus. There is a certain distance between the inner lining 3 and the grounding shield ring 101. The material of the lining 3 can be an insulating material such as quartz. The inner lining 3 is provided with an opening matching the film transfer door 2 for wafer transfer.

There is a certain gap between the side of the ground shield ring 101 close to the plasma confinement ring 6 and the plasma confinement ring 6 of the present invention. The position in the horizontal direction where the upper surface of the grounding shield ring 101 is located is higher than or equal to the horizontal plane where the upper surface of the plasma confinement ring 6 is located, and the plasma confinement ring 6 is wrapped in the ground ring 4 of the U-shaped structure. At this time, the plasma confinement ring 6 is completely shielded in the ground ring 4 of the U-shaped structure, so the ground shield ring 101 of the present invention is used to protect the electric field between the plasma confinement ring 6 and the side wall of the reaction chamber from being transmitted. The influence of film gate 2.

Specifically, the capacitance to ground of the plasma confinement ring 6 is C1+C2+C3, where the capacitor C1 is the capacitance generated between the plasma confinement ring 6 and the vertical grounding ring, and the capacitor C2 is the plasma confinement ring 6 and the horizontal grounding ring The capacitance C3 is the capacitance generated between the plasma confinement ring 6 and the grounded shield ring 101, and the capacitance C3 is only determined by the distance between the plasma confinement ring 6 and the grounded shield ring 101, and It has nothing to do with the relative position of the film gate 2.

According to the principle of capacitance size, the capacitance is proportional to the relative area between the two and inversely proportional to the distance. At this time, the relative position between the plasma confinement ring 6 and the grounding shield ring 101 is different. The relative area does not change, so the ground capacitance (C1+C2+C3) of the plasma confinement ring 6 basically does not change with the relative position of the plasma confinement ring 6 and the film gate 2.

For example, the grounding shield ring of the present invention may also have other shapes that can ensure that the plasma confinement ring is completely covered in the grounding ring, so as to ensure that the ground capacitance of the plasma confinement ring has nothing to do with the pass gate. The embodiment of the present invention does not limit this.

As shown in FIG. 3, the capacitance value of the plasma confinement component with a grounded shield ring and the plasma confinement component without a grounded shield ring changes with the adjustment of the electrode plate spacing. Among them, the curve Q1 represents the change curve of the capacitance value of the plasma confinement element without a grounded shield ring with the adjustment of the plate spacing, and the curve Q2 represents the capacitance value of the plasma confinement element with a grounded shield ring as The change curve of the adjustment of the plate spacing.

When the electrostatic chuck moves downwards, the distance between the plates of the plasma processing device gradually increases. From the curve Q1 in Figure 3, it can be seen that the capacitance to ground of the plasma confinement ring gradually increases with the increase of the distance between the plates. After it becomes smaller to the minimum value, it gradually increases as the distance between the plates increases, and a capacitance inflection point appears. Therefore, when the grounding shield ring is not installed, the pass gate effect is very obvious at this time, and the capacitance near the pass gate decreases by about 7%, and there is a capacitance inflection point, and the capacitance inflection point will affect the plate spacing on the etching performance Continuity of adjustment; when the plasma confinement assembly is moving, the distance and relative area between the plasma confinement ring and the side wall of the reaction chamber change due to the existence of the film gate, then the plasma confinement ring and the side wall of the reaction chamber change The capacitance between the plasma confinement ring will continuously change, resulting in the asymmetry of the ground capacitance distribution of the plasma confinement ring, and the asymmetry of the capacitance distribution will cause the etching uniformity and rate asymmetry.

When the electrostatic chuck moves downward, the distance between the plates of the plasma processing device gradually increases. From the curve Q2 in Figure 3, it can be seen that the capacitance to ground of the plasma confinement ring basically remains unchanged as the distance between the plates increases. The overall capacitance fluctuation is less than 0.5%. When the grounding shield ring is installed, the film gate effect at this time is completely eliminated. Therefore, the U-shaped structure ground ring in the plasma confinement element of the present invention enables the plasma confinement ring to be completely covered in the ground ring. When the plasma confinement element is moving, Since the relative position between the plasma confinement ring and the grounding shield ring does not change, and the relative area does not change, the capacitance between the plasma confinement ring and the grounding shield ring is basically unchanged, so the ground capacitance of the plasma confinement ring There is no inflection point, and there is no problem that the capacitance inflection point affects the continuity of the adjustment effect of the plate spacing on the etching performance. At the same time, the overall fluctuation of the capacitor is small, and the capacitance distribution is more symmetrical, which makes the etching more uniform and the rate is more symmetric. It can also ensure the reliability of plasma confinement near the film gate.

The method for controlling the plasma processing device based on the above plasma confinement element in the plasma etching process of the present invention includes the following process: a ground ring 4 is provided, and the ground ring 4 is configured as a U with a ground shield ring 101 Type structure; provide the plasma confinement ring 6 to be combined with the ground ring 4 to configure a plasma confinement element, the plasma confinement element is connected with the electrostatic chuck 115 in the reaction chamber; the ground ring 4 surrounds the plasma confinement ring 6 Three sides, so that the plasma confinement ring is shielded in the ground ring 4; the radio frequency system generates an electric field in the reaction chamber to dissociate the reaction gas into plasma, and the plasma confinement component confines the reaction chamber during the plasma etching process When the electrostatic chuck 115 moves up and down to adjust the distance between the upper and lower plates of the plasma processing device, the plasma confinement component moves up and down along the side wall of the reaction chamber, and the plasma The confinement ring 6 is shielded so that the electric field between it and the side wall of the reaction chamber is not affected by the film gate, and the ground capacitance of the plasma confinement ring 6 remains basically unchanged.

In summary, the plasma processing device of the present invention can confine the plasma in a certain working area through the plasma confinement element, can prevent impurities and contamination on the surface of the semiconductor substrate, and can achieve more confinement in the processing area. For stable plasma. The invention uses the plasma confinement ring to confine the plasma, and is used for the confinement of the plasma in the cavity and the radio frequency system and the adjustment of the airflow in the cavity during the plasma etching process. The U-shaped structure ground ring in the plasma confinement element of the present invention enables the plasma confinement ring to be completely covered in the ground ring, so that the plasma confinement ring is electrically The capacitance value remains unchanged during the adjustment of the plate spacing. The plasma confinement element of the present invention can not only ensure the consistency and stability of the process of adjusting the etching performance of the electrode plate spacing, but also eliminate the asymmetry factor of the etching performance of the cavity transfer gate, and at the same time ensure the transfer gate Reliability of nearby plasma confinement.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. After those skilled in the art have read the above content, various modifications and substitutions to the present invention will be obvious. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

2: Passing the film door

3: Lining

4: Grounding ring

6: Plasma confinement ring

100: Vacuum reaction chamber

101: Ground shield ring

115: Support electrostatic chuck

C1, C2, C3: Capacitance

Claims (11)

A plasma confinement element for a plasma processing device. The plasma processing device includes a reaction chamber. An electrostatic chuck for supporting a substrate is arranged in the reaction chamber. The plasma confinement element is located on the electrostatic chuck. And a side wall of the reaction chamber, the side wall of the reaction chamber is provided with a film gate, the plasma confinement component can move up and down along the direction of the side wall of the reaction chamber; the plasma confinement component includes a plasma A confinement ring and a grounding ring, the grounding ring is provided with a grounding shield ring, the grounding shielding ring is located between the plasma confinement ring and the side wall of the reaction chamber, so that the plasma confinement ring is shielded on the ground In the ring to protect the electric field between the plasma confinement ring and the side wall of the reaction chamber from the influence of the film gate. The plasma confinement element according to claim 1, wherein the ground ring further includes a horizontal ground ring located below the plasma confinement ring and a vertical ground ring located between the electrostatic chuck and the plasma confinement ring. The plasma confinement element according to claim 2, wherein the vertical grounding ring is connected to an edge ring provided around the electrostatic chuck, the grounding shield ring and the horizontal grounding ring are respectively grounded; the vertical grounding ring, the horizontal The grounding ring and the grounding shielding ring are integrally arranged. The plasma confinement element according to any one of claims 1 to 3, wherein the ground ring has a U-shaped structure. The plasma confinement element according to any one of claims 2 to 3, wherein the plasma confinement ring is located between the vertical ground ring and the ground shield ring, and the plasma confinement ring is located on the horizontal ground ring Above, so that the ground ring surrounds the three sides of the plasma confinement ring. The plasma confinement element according to claim 1, wherein the position in the horizontal direction where the upper surface of the grounding shield ring is located is higher than or equal to that of the upper surface of the plasma confinement ring The horizontal plane. The plasma confinement element according to claim 1, wherein the film transfer door is an opening on one side wall of the reaction chamber for transferring a wafer between the inside and outside of the reaction chamber. The plasma confinement element according to claim 1, wherein an inner lining is arranged between the side wall of the reaction chamber and the grounding shield ring, and an opening matching the film gate is arranged on the inner lining. The plasma confinement element according to claim 1, wherein the electric field between the plasma confinement ring and the side wall of the reaction chamber matches the distance between the ground shield ring and the plasma confinement ring. A plasma processing device includes a reaction chamber; the lower part of the reaction chamber is provided with an electrostatic chuck for carrying a substrate and a lower electrode plate is provided; an upper part of the reaction chamber contains an upper electrode plate, wherein The electrostatic chuck and a side wall of the reaction chamber are provided with the plasma confinement assembly as described in any one of claims 1 to 9; the electrostatic chuck and an edge ring provided around it can move up and down to adjust The distance between the upper and lower plates of the plasma processing device drives the plasma confinement component to move up and down along the side wall of the reaction chamber; the plasma confinement component includes a plasma confinement ring and a ground ring, the ground ring A grounding shield ring is provided, the grounding shielding ring is located between the plasma confinement ring and the side wall of the reaction chamber, and the plasma confinement ring is shielded in the grounding ring to protect the plasma confinement ring and The electric field between the side walls of the reaction chamber is not affected by the film gate. A method for controlling the capacitance of a plasma processing device based on a plasma confinement element according to any one of claims 1 to 9, the method comprising the following process: providing a ground ring configured to be provided with a ground A U-shaped structure of the mask ring; A plasma confinement ring is provided to be combined with the ground ring to configure the plasma confinement element; the plasma confinement element is connected to an edge ring arranged around an electrostatic chuck in the reaction chamber; the ground ring surrounds Three sides of the plasma confinement ring so that the plasma confinement ring is covered in the ground ring; an electric field is generated in the reaction chamber to dissociate a reactive gas into a plasma by a radio frequency system, and the plasma The confinement component constrains the plasma and the radio frequency system in the reaction chamber during a plasma etching process, and adjusts the gas flow in the reaction chamber; when the electrostatic chuck and the edge ring provided around it move to adjust the When the distance between an upper electrode plate and a lower electrode plate of the plasma processing apparatus, the plasma confinement component moves up and down along a side wall of the reaction chamber, and the plasma confinement ring is shielded so that it is in contact with the reaction chamber The electric field between the side walls is not affected by a pass gate, and the ground capacitance of the plasma confinement ring remains basically unchanged.

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