TWI727902B - Gas-liquid separation and stratification independent recovery device - Google Patents

Abstract

This creation is a gas-liquid separation layered independent recovery device, which includes a fixed inner layer, a plurality of interlayers, a moving outer layer, and a lifting mechanism. The fixed inner layer, the interlayer, and the movable outer layer are sequentially nested and moved up and down relative to each other by the lifting mechanism. An independent gas space and liquid-containing ring groove are formed between each layer. When each layer moves upward relative to the previous layer, the corresponding gas space and liquid-containing ring groove are opened, and independent liquid pipes and gas pipes are connected to the grooves. Liquid ring groove and gas space. In this way, the invention can lift each layer through the lifting mechanism to perform the etching reaction of different liquid medicines and separately recover the liquid medicine and the reacted chemical gases and chemical liquids. Therefore, the burden of subsequent processing can be effectively reduced, and the production can also be avoided. Toxic substances or further pollution.

Description

Gas-liquid separation and stratification independent recovery device

This creation relates to a semiconductor processing equipment, especially a device used to recover various liquids that have been used in processing and various gases produced by processing.

In the semiconductor manufacturing process, liquid agents are often used to etch wafer substrates. When the liquid medicine contacts the wafer substrate, the liquid medicine chemically reacts with the material on the surface of the wafer substrate to produce the required semi-finished products; after the reaction, the reacted liquid medicine and the chemical gases and chemistry generated during the reaction The liquid will be recycled through the pipeline. In addition, a wafer substrate sometimes needs to be etched with a variety of different liquid agents.

However, in the prior art, there is only one pipeline for recovering the reacted liquid medicine and the chemical gas and chemical liquid generated during the reaction, that is to say, all different liquid medicines are etched in the same pipeline. For recycling. In this way, the recovery of all chemical gases and chemical liquids will not only cause the burden of subsequent processing, but also may cause different types of chemical liquids or chemical gases to mix during the recovery process, thereby producing toxic substances or further pollution.

Therefore, the method of recovering the reacted liquid and gas in the prior art really needs to be improved.

In view of the aforementioned shortcomings and deficiencies of the prior art, this invention provides a gas-liquid separation and stratified independent recovery device, which can recover different chemical liquids, and can recover gas and liquid separately, so it can effectively reduce the burden of subsequent processing , It can also avoid the production of toxic substances or further pollution.

In order to achieve the above creative goals, the technical means used in this creation is to design a gas-liquid separation layered independent recovery device, which includes: A substrate; A fixed inner layer, which contains An inner main ring wall, the bottom edge of which is fixed on the base plate; An inner liquid-containing ring wall, which is located on the radially outer side of the inner main ring wall and forms a first liquid-containing ring groove with the inner main ring wall; An inner liquid pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall; An inner gas pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall, and the top opening of the inner gas pipeline is higher than the top opening of the inner liquid pipeline; A first interlayer, which contains A first main ring wall, which can move up and down relative to the fixed inner layer and is arranged on the radially outer side of the inner liquid-containing ring wall; a first main ring wall and the inner main ring wall form a A gas space, and the top edge of the first main ring wall is selectively close to the top edge of the inner main ring wall, thereby closing the first gas space; A first ring baffle formed on the inner side surface of the first main ring wall, and extending obliquely downward toward the radial inner side of the first main ring wall until the inner edge of the first ring baffle is located at the first Above the liquid ring groove; A first liquid-containing ring wall, which is located on the radially outer side of the first main ring wall and forms a second liquid-containing ring groove with the first main ring wall; A first liquid pipeline that penetrates the substrate and communicates with the bottom of the first liquid-containing ring groove; A second interlayer, which contains A second main ring wall, which can move up and down relative to the first interlayer and is disposed on the radially outer side of the first liquid-containing ring wall; a second main ring wall is formed between the second main ring wall and the first main ring wall. Two gas spaces, and the top edge of the second main ring wall is selectively tightly attached to the top edge of the first main ring wall, thereby closing the second gas space; A second ring baffle is formed on the inner side of the second main ring wall and extends downwardly and obliquely toward the radial inner side of the second main ring wall until the inner edge of the second ring baffle is located at the second Above the liquid ring groove; A second liquid-containing ring wall, which is located on the radially outer side of the second main ring wall and forms an outer liquid-containing ring groove with the second main ring wall; A second liquid pipeline which movably penetrates the substrate and communicates with the bottom of the second liquid-containing ring groove; A mobile outer layer, which contains An outer main ring wall, which is arranged on the radially outer side of the second liquid-containing ring wall so as to move up and down relative to the second interlayer; an outer gas space is formed between the outer main ring wall and the second main ring wall , And the top edge of the outer main ring wall is selectively tightly attached to the top edge of the second main ring wall, thereby closing the outer gas space; An outer layer ring baffle formed on the inner side of the outer layer main ring wall and extending obliquely downward toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid ring groove ； An outer layer liquid pipeline that movably penetrates the substrate and is connected to the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the substrate, and the top edge is relatively slidably close to the outer surface of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall The first interlayer, the second interlayer, and the mobile outer layer are movably arranged in the common gas space, and the first gas space, the second gas space, and the outer gas space are connected to the common gas space ； A common gas pipeline connected to the common gas space; An air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lifting mechanism is connected to the first interlayer, the second interlayer, and the mobile outer layer, and can respectively control the first interlayer, the second interlayer, and the mobile outer layer to move up and down.

In order to achieve the above creative goals, the technical means used in this creation is to design a gas-liquid separation layered independent recovery device, which includes: A substrate; A fixed inner layer, which contains An inner main ring wall, the bottom edge of which is fixed on the base plate; An inner liquid-containing ring wall, the bottom edge of which is fixed on the substrate and located at the radially outer side of the inner main ring wall, and an outer liquid-containing ring groove is formed between the inner main ring wall and the inner main ring wall; An inner liquid pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall; An inner gas pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall, and the top opening of the inner gas pipeline is higher than the top opening of the inner liquid pipeline; A mobile outer layer, which contains An outer main ring wall, which can move up and down with respect to the fixed inner layer and is disposed on the radially outer side of the inner liquid-containing ring wall; an outer gas space is formed between the outer main ring wall and the inner main ring wall , And the top edge of the outer main ring wall selectively adheres to the top edge of the inner main ring wall, thereby closing the outer gas space; An outer layer ring baffle formed on the inner side of the outer layer main ring wall and extending obliquely downward toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid ring groove; An outer layer liquid pipeline which penetrates the substrate and communicates with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the substrate, and the top edge is relatively slidably close to the outer surface of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall Space, the mobile outer layer is movably arranged in the common gas space, and the outer gas space is connected to the common gas space; A common gas pipeline connected to the common gas space; An air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lifting mechanism is connected to the moving outer layer and can control the moving outer layer to move up and down.

The advantage of this creation is that the inner liquid pipeline and the inner gas pipeline penetrate the substrate and communicate with the inner side of the inner main ring wall, and the top opening of the inner gas pipeline is higher than the top opening of the inner liquid pipeline , So when the wafer substrate is located inside the inner main ring wall for etching, the reacted chemical liquid can flow to the processing system through the inner liquid pipeline, and the reacted chemical gas can be pumped away through the inner gas pipeline. And because the inner gas pipeline has a higher opening, the reacted chemical liquid will not flow into the inner gas pipeline.

In addition, the outer main ring wall is movably arranged on the radially outer side of the inner main ring wall, and the outer ring baffle is formed on the inner side of the outer main ring wall and extends inward and downward until the inner edge of the outer ring baffle is located at Above the outer liquid ring groove and the outer liquid pipeline pass through the substrate and communicate with the bottom of the outer liquid ring groove, so when the outer main ring wall moves upward relative to the inner main ring wall, and the wafer substrate is located on the outer main ring wall When etching is performed between the top edge of the inner main ring wall and the top edge of the inner main ring wall, the reacted chemical liquid will be thrown into the outer gas space and flow along the outer side of the inner main ring wall to the outer liquid-containing ring groove Or flow along the inner side of the outer main ring wall to the outer ring baffle and drip from the inner edge of the outer ring baffle into the outer liquid-containing ring groove, and then be recovered by the outer liquid pipeline, so it will not flow to the inner The liquid pipeline in the layer is mixed with other chemical liquids for recovery; and the reacted chemical gas can flow through the outer gas space to bypass the outer ring baffle and the top edge of the inner liquid-containing ring wall to flow into the common gas space, and finally be evacuated The pump is pumped and recovered through the common gas pipeline.

In this way, this creation can move the outer layer up and down through the lifting mechanism and adjust the etching position of the wafer substrate to perform the etching reaction of different liquid medicines and at the same time to recover the liquid medicine and the reacted chemical gas and chemical liquid respectively, so it can It can effectively reduce the burden of subsequent processing, and can also avoid the production of toxic substances or further pollution.

Moreover, by adding one or more interlayers between the fixed inner layer and the mobile outer layer, and each interlayer is arranged in the same manner as the aforementioned fixed inner layer and the mobile outer layer, that is, the layers are sequentially movable and nested. The ring baffle and liquid pipeline on the first floor correspond to the liquid-containing ring groove formed on the previous floor, and are connected to the lifting mechanism to control the lifting respectively, so that the number of different liquid medicines that can be recovered by this creation can be further increased , In order to meet the actual use requirements.

Further, in the gas-liquid separation layered independent recovery device, wherein the inner main ring wall of the fixed inner layer includes an inner body section, the bottom edge of which is fixed on the substrate; and an inner inclined section , Which is formed on the top edge of the inner body section and extends upward obliquely toward the radially inner side of the inner main ring wall; the first main ring wall of the first interlayer includes a first body section that can be opposed to The fixed inner layer is arranged on the radially outer side of the inner liquid-containing ring wall to move up and down; a first inclined section is formed on the top edge of the first main ring wall and faces the first main ring wall The radially inner side extends obliquely upward; the end of the first oblique section is selectively tightly attached to the end of the inner oblique section by the up and down movement of the first body section, thereby closing the first gas space.

Further, in the gas-liquid separation layered independent recovery device, wherein the first main ring wall of the first interlayer further includes a first sealing section formed at the end of the first inclined section and facing Extend downward; the first sealing section is selectively pressed against the end of the inner inclined section with the radially outer side surface of the first sealing section by the up and down movement of the first body section, thereby closing the The first gas space.

Furthermore, in the gas-liquid separation layered independent recovery device, the fixed inner layer further comprises an inner bottom plate, which is obliquely arranged on the radially inner side of the inner main ring wall; the bottom of the inner bottom plate A liquid perforation is formed at the end; the top end of the inner liquid pipeline abuts against the bottom surface of the inner bottom plate, and the top opening of the inner liquid pipeline communicates with the liquid perforation; the inner gas pipeline penetrates the inner layer The bottom plate, and the top opening of the inner layer gas pipeline protrudes from the top surface of the inner layer bottom plate.

Furthermore, in the gas-liquid separation layered independent recovery device, the fixed inner layer further includes an inner ring baffle formed on the inner side of the inner main ring wall and facing the inner main ring The radial inner side of the ring wall extends obliquely downward; in the radial direction of the inner main ring wall, the inner edge of the inner ring baffle is located inside the top opening of the inner gas pipeline.

Furthermore, in the gas-liquid separation layered independent recovery device, wherein the fixed inner layer further includes an inner layer extending ring plate formed on the inner edge of the inner layer ring baffle plate and extending downward; the The height position of the bottom edge of the inner layer extension ring plate is lower than the height position of the top opening of the inner layer gas pipeline.

Furthermore, in the gas-liquid separation and stratified independent recovery device, the first interlayer further includes a first extending ring plate formed on the inner edge of the first ring baffle plate and extending downwards. The height position of the bottom edge of an extended ring plate is lower than the height position of the top edge of the inner liquid-containing ring wall.

Furthermore, in the gas-liquid separation and stratified independent recovery device, wherein the lifting mechanism includes a first lifting slide bar, which can move up and down through the substrate and abuts against the first main ring wall Bottom edge; a second lifting slide bar, which can move up and down through the base plate, and abuts against the bottom edge of the second main ring wall; an outer layer lifting slide bar, which can move up and down through the base plate, And abuts against the bottom edge of the outer main ring wall; a jacking slide seat, which is movably arranged under the first jacking slide bar, the second jacking slide bar, and the outer jacking slide bar A lateral drive device, which can move the jacking slide laterally, thereby selectively making the jacking slide abut the first jacking slide bar, the second jacking slide bar, or the outer top The bottom end of the lifting slide bar; a lifting drive device that can push the jacking slide upwards, thereby causing the jacking slide to push upwards the first jacking slide bar, the second jacking slide bar, Or the outer layer jacking slide bar, and the first main ring wall and the second main ring wall are pushed upward by the first jacking slide bar, the second jacking slide bar, or the outer jacking slide bar , Or the outer main ring wall.

Furthermore, in the gas-liquid separation and stratified independent recovery device, wherein the bottom edge of the first liquid-containing ring wall of the first interlayer is fixed to the bottom edge of the first main ring wall, and the first The liquid-containing ring wall moves with the first main ring wall.

In the following, in conjunction with the drawings and preferred embodiments of this creation, the technical means adopted by this creation to achieve the predetermined creation purpose are further explained.

Please refer to Figure 1, Figure 2, and Figure 7. The gas-liquid separation layered independent recovery device of this invention includes a substrate 10, a fixed inner layer 20, a first interlayer 30, and a second interlayer 40 in this embodiment. , A moving outer layer 50, a gas ring wall 61, a common gas pipeline 62, a suction pump (not shown in the figure), and a lifting mechanism 70.

4, 5, and 6, the fixed inner layer 20 includes an inner main ring wall 21, an inner bottom plate 22, an inner liquid pipeline 23, an inner gas pipeline 24, and an inner The layer ring baffle 25, an inner layer extension ring plate 26, and an inner layer liquid-containing ring wall 27.

The bottom edge of the inner main ring wall 21 is fixed to the substrate 10. Specifically, the inner main ring wall 21 includes an inner body section 211 and an inner inclined section 212 in this embodiment. The bottom edge of the inner body section 211 is fixed to the substrate 10 and may extend upright perpendicular to the substrate 10. The inner inclined section 212 is formed at the top edge of the inner main body section 211 and extends upward and inclined toward the radial inner side of the inner main ring wall 21. The inner inclined section 212 enables the inner main ring wall 21 to be closer to the wafer substrate 10 being processed, which is more convenient for receiving liquid and facilitating liquid flow. However, in other embodiments, the inner inclined section 212 is not necessary.

The inner bottom plate 22 is obliquely arranged on the radial inner side of the inner main ring wall 21, and a liquid perforation 221 is formed at the bottom end (ie, the lowest part of the slope) of the inner bottom plate 22. The inner liquid pipeline 23 penetrates the substrate 10 and communicates with the inner side of the inner main ring wall 21. Specifically, in this embodiment, the top end of the inner liquid pipe 23 abuts against the bottom surface of the inner bottom plate 22, and the top opening of the inner liquid pipe 23 is connected to the liquid perforation 221. The inner gas pipeline 24 penetrates the substrate 10 and communicates with the inner side of the inner main ring wall 21. Specifically, in this embodiment, the inner layer gas pipeline 24 penetrates the inner layer bottom plate 22, and the top opening of the inner layer gas pipeline 24 protrudes from the top surface of the inner layer bottom plate 22, that is to say, the inner layer gas pipeline 24 After passing through the inner bottom plate 22, the top end of the inner bottom plate 22 continues to extend upward for a distance, so that the opening at the top does not adjoin the inner bottom plate 22, so that when the liquid flows along the inner bottom plate 22 from high to low, the liquid will It flows into the inner gas pipeline 24.

The above-mentioned relative matching relationship between the inner bottom plate 22 and the inner liquid pipeline 23 and the inner gas pipeline 24 can facilitate the flow of liquid and facilitate the recovery of liquid, and can prevent the liquid from flowing into the inner gas pipeline along the inner bottom plate 22 24, but in other embodiments, the inner bottom plate 22 is not necessarily required, only the inner liquid pipeline 23 and the inner gas pipeline 24 pass through the substrate 10 and are connected to the inner side of the inner main ring wall 21, and the inner The top opening of the layer gas pipeline 24 may be higher than the top opening of the inner layer liquid pipeline 23.

The inner ring baffle 25 is formed on the inner side surface of the inner main ring wall 21 and extends obliquely downward toward the radial inner side of the inner main ring wall 21. In the radial direction of the inner main ring wall 21, the inner edge of the inner ring baffle 25 is located inside the top opening of the inner gas pipeline 24. Therefore, when the wafer substrate 10 is positioned on the inner ring baffle 25 for etching, the liquid can be thrown to the inner side of the inner main ring wall 21 and flow along the inner ring baffle 25 to the inner ring baffle 25. The inner edge of 25 lowers down to the inner bottom plate 22. In other words, the inner ring baffle 25 can block the top opening of the inner gas pipeline 24, so as to prevent the liquid from being thrown directly into the inner gas pipeline from the wafer substrate 10 The top of 24 is open.

The inner extending ring plate 26 is formed on the inner edge of the inner ring baffle 25 and extends downward. The height position of the bottom edge of the inner extension ring plate 26 is lower than the height of the top opening of the inner layer gas pipeline 24, so that the liquid flowing along the inner layer ring baffle 25 to the inner layer extension ring plate 26 can follow The inner extending ring plate 26 is lowered down onto the inner bottom plate 22, thereby preventing liquid from flowing along the bottom surface of the inner ring baffle 25 and dripping into the top opening of the inner gas pipeline 24.

The above-mentioned inner layer ring baffle 25 and inner layer extension ring plate 26 and the inner layer gas pipeline 24 can further ensure that the liquid will not flow into the inner layer gas pipeline 24, but in other embodiments There may also be no inner layer ring baffle 25 or inner layer extension ring plate 26, or neither.

The inner liquid-containing ring wall 27 is located at the radially outer side of the inner main ring wall 21, and a first liquid-containing ring groove 81 is formed between the inner main ring wall 21 and the inner main ring wall 21. Specifically, the inner liquid-containing ring wall 27, the substrate 10, and the inner main ring wall 21 are connected to form a U-shaped ring groove with only an upper opening to collect liquid at the bottom of the groove.

Please further refer to Figures 7 and 8, the first interlayer 30 includes a first main ring wall 31, a first liquid pipeline 32, a first ring baffle 33, a first extension ring plate 34, and a first盛液环wall 35.

The first main ring wall 31 can move up and down relative to the fixed inner layer 20 and is disposed on the radially outer side of the inner liquid-containing ring wall 27, and a first main ring wall 31 and the inner main ring wall 21 form a first Gas space 82. Specifically, in this embodiment, the first main ring wall 31 includes a first body section 311, a first inclined section 312, and a first sealing section 313.

The first body section 311 is disposed on the radially outer side of the inner liquid-containing ring wall 27 to move up and down relative to the fixed inner layer 20, and is perpendicular to the substrate 10 and can move in a direction away from the substrate 10 (upward). The first inclined section 312 is formed on the top edge of the first main ring wall 31 and extends upwardly and inclined toward the radial inner side of the first main ring wall 31. The first sealing section 313 is formed at the end of the first inclined section 312 and extends vertically downward into a ring wall shape. By moving up and down of the first body section 311, the first sealing section 313 selectively abuts against the end of the inner inclined section 212 with the radially outer side of the first sealing section 313, thereby closing the first gas space 82.

However, the specific structure of the first main ring wall 31 is not limited to the above in other embodiments. For example, there may be no first sealing section 313. In this case, the end of the first inclined section 312 may be formed by the upper and lower sides of the first body section 311. Move and selectively close to the end of the inner inclined section 212; or there may be no first inclined section 312 but the top edge of the first main ring wall 31 (the top edge of the first body section 311) to be selectively dense It fits at the top edge of the inner main ring wall 21 (the top edge of the inner body section 211), so that the first gas space 82 can also be closed.

The first liquid pipeline 32 penetrates the substrate 10 and communicates with the bottom of the first liquid-containing ring groove 81. Specifically, the first liquid pipe 32 is formed with a through hole at the bottom of the bottom of the first liquid receiving ring groove 81, whereby the liquid that should be collected at the bottom of the U-shaped first liquid receiving ring groove 81 will be It flows into the first liquid pipeline 32 from the through hole at the bottom.

The first ring baffle 33 is formed on the inner surface of the first main ring wall 31, and extends downwardly and obliquely toward the radial inner side of the first main ring wall 31 until the inner edge of the first ring baffle 33 is located in the first liquid receiving ring Above the slot 81. In other words, in the radial direction of the first main ring wall 31, the inner edge of the first ring baffle 33 is located on the inner side compared to the inner liquid-containing ring wall 27, so that the liquid can pass through the first ring baffle 33 reliably. The inner edge of φ drops into the first liquid-containing ring groove 81 without dripping out of the first liquid-containing ring groove 81.

The first extension ring plate 34 is formed on the inner edge of the first ring baffle 33 and extends downward. The height of the bottom edge of the first extension ring plate 34 is lower than the height of the top edge of the inner liquid-containing ring wall 27. That is to say, the bottom edge of the first extension ring plate 34 extends downward to be located in the first liquid-containing ring groove 81, and remains when the first main ring wall 31 moves upward relative to the inner liquid-containing ring wall 27 to the apex. In this way, it is possible to prevent the liquid from flowing from the inner edge of the first ring baffle 33 along the bottom surface of the first ring baffle 33 and dripping out of the first liquid receiving ring groove 81.

The first extension ring plate 34 can ensure that the liquid is indeed recovered through the first liquid-containing ring groove 81 and the first liquid pipe 32 without leakage. However, in other embodiments, the first extension ring plate 34 may be omitted and only To achieve this goal, "the inner edge of the first ring baffle 33 is located above the first liquid-containing ring groove 81".

The first liquid-containing ring wall 35 is located at the radially outer side of the first main ring wall 31, and a second liquid-containing ring groove 83 is formed between the first main ring wall 31 and the first main ring wall 31. Specifically, in this embodiment, the bottom edge of the first liquid-containing ring wall 35 is connected to the bottom edge of the first main ring wall 31 via an annular plate, and the first liquid-containing ring wall 35 follows the first main ring wall. The ring wall 31 moves. In other words, the first liquid-containing ring wall 35, the annular plate, and the first main ring wall 31 are connected to form a U-shaped ring groove.

Please further refer to FIGS. 9 and 10, the second interlayer 40 includes a second main ring wall 41, a second ring baffle 42, a second liquid containing ring wall 43, and a second liquid pipeline 44.

The second main ring wall 41 is disposed on the radially outer side of the first liquid-containing ring wall 35 so as to be movable up and down relative to the first interlayer 30. A second gas space 84 is formed between the second main ring wall 41 and the first main ring wall 31, and the top edge of the second main ring wall 41 is selectively tightly attached to the top edge of the first main ring wall 31, by This closes the second gas space 84. The second ring baffle 42 is formed on the inner surface of the second main ring wall 41, and extends downwardly and obliquely toward the radial inner side of the second main ring wall 41 until the inner edge of the second ring baffle 42 is located in the second liquid-containing ring Above the groove 83. The second liquid-containing ring wall 43 is located on the radially outer side of the second main ring wall 41, and an outer liquid-containing ring groove 85 is formed between the second main ring wall 41 and the second main ring wall 41. The second liquid pipeline 44 movably penetrates the substrate 10 and communicates with the bottom of the second liquid-containing ring groove 83. Specifically, the second liquid pipe 44 movably penetrates the base plate 10 and then passes through and is fixed on the annular plate connecting the first main ring wall 31 and the first liquid-containing ring wall 35, and is mounted on the annular plate A through hole is formed, that is to say, the second liquid pipeline 44 will actually move up and down with the first main ring wall 31 relative to the substrate 10. In addition, the remaining detailed structure of the second interlayer 40 is exactly the same as that of the first interlayer 30. The only difference is that the first interlayer 30 corresponds to the fixed inner layer 20 inward and corresponds to the second interlayer 40 outward in the radial direction. The second interlayer 40 corresponds to the first interlayer 30 inwardly and corresponds to the moving outer layer 50 outwardly in the radial direction.

Please further refer to FIGS. 11 and 12, the moving outer layer 50 includes an outer main ring wall 51, an outer ring baffle 52, and an outer liquid pipeline 53.

The outer main ring wall 51 is disposed on the radially outer side of the second liquid-containing ring wall 43 so as to be movable up and down relative to the second interlayer 40. An outer gas space 86 is formed between the outer main ring wall 51 and the second main ring wall 41, and the top edge of the outer main ring wall 51 is selectively attached to the top edge of the second main ring wall 41, thereby sealing the outer layer气空间86。 Gas space 86. The outer ring baffle 52 is formed on the inner surface of the outer main ring wall 51, and extends obliquely downward toward the radial inner side of the outer main ring wall 51 until the inner edge of the outer ring baffle 52 is located above the outer liquid ring groove 85. The outer liquid pipeline 53 movably penetrates the substrate 10 and communicates with the bottom of the outer liquid receiving ring groove 85. The remaining detailed structure of the mobile outer layer 50 is exactly the same as that of the second interlayer 40. The only difference is that the mobile outer layer 50 does not have a liquid-containing ring wall (because it is no longer necessary to form a liquid-containing ring groove outward), and the second interlayer 40 is in the radial direction. The top is inward corresponding to the first interlayer 30 and outward corresponding to the mobile outer layer 50, and the mobile outer layer 50 in the radial direction corresponds to the second interlayer 40 inward and outward to the outer surface of the main ring wall 51 of the outer layer.合于gas ring wall 61.

Please further refer to FIGS. 4 and 8, the bottom edge of the gas ring wall 61 is fixed to the substrate 10, and the top edge is relatively slidably attached to the outer surface of the outer main ring wall 51. A common gas space 611 is formed between the gas ring wall 61 and the inner main ring wall 21. The first interlayer 30, the second interlayer 40, and the mobile outer layer 50 are movably arranged in the common gas space 611, and the first gas space 82. The second gas space 84 and the outer gas space 86 are connected to the common gas space 611. The common gas pipeline 62 communicates with the common gas space 611. The suction pump is connected to the inner gas pipeline 24 and the common gas pipeline 62.

Please further refer to Figure 3, Figure 7, Figure 9, and Figure 10. The lifting mechanism 70 is connected to the first interlayer 30, the second interlayer 40, and the mobile outer layer 50, and can respectively control the first interlayer 30, the second interlayer 40, and the mobile outer layer 50 to move up and down. The lifting mechanism 70 includes a first lifting sliding rod 71, a second lifting sliding rod 72, an outer lifting sliding rod 73, a lifting sliding seat 74, a lateral driving device 75, and a lifting driving device 76.

The first lifting sliding rod 71 penetrates the base plate 10 so as to move up and down, and abuts against the bottom edge of the first main ring wall 31. The second lifting sliding rod 72 penetrates the base plate 10 so as to move up and down, and abuts against the bottom edge of the second main ring wall 41. The outer jacking slide rod 73 can move up and down through the substrate 10 and abuts against the bottom edge of the outer main ring wall. The jacking slide 74 is movably disposed under the first jacking slide bar 71, the second jacking slide bar 72, and the outer jacking slide bar 73. The lateral driving device 75 can move the jacking slide 74 laterally, thereby selectively making the jacking slide 74 abut against the first jacking slide 71, the second jacking slide 72, or the outer jacking slide 73 The bottom end. The lifting driving device 76 can push up the jacking slide 74, thereby causing the jacking slide 74 to push up the first jacking slide bar 71, the second jacking slide bar 72, or the outer jacking slide bar 73, and The first main ring wall 31, the second main ring wall 41, or the outer main ring wall 51 are pushed upward by the first lifting slide bar 71, the second lifting slide bar 72, or the outer lifting slide bar 73.

With the cooperation of the above components, if the lateral drive device 75 makes the jacking slide 74 abut the outer jacking slide 73 and not the second jacking slide 72 and the first jacking slide 71, then When the lifting driving device 76 pushes the jacking slide 74 upwards, the jacking slide 74 pushes the outer jacking slide rod 73 upwards and the outer jacking slide rod 73 pushes the outer main ring wall 51 upwards, thereby making the outer main ring wall 51 The ring wall 51 rises upward relative to the second interlayer 40, the first interlayer 30, and the fixed inner layer 20; the lifting method of the second interlayer 40 and the first interlayer 30 is also the same.

In addition, the lateral driving device 75 and the lifting driving device 76 are pneumatic cylinders in this embodiment, but in other embodiments, they may also be servo motors or other devices with the same function. Furthermore, in this embodiment, there are two sets of identical lifting devices, which are arranged relative to the axis of each ring wall, and the two lateral driving devices 75 are opened and closed synchronously, and the two lifting driving devices 76 are lifted synchronously.

This creation can adjust the number of interlayers as required, that is to say, there may be additional third interlayer and fourth interlayer between the second interlayer 40 and the mobile outer layer 50, and the connection and cooperation relationship between the inner and outer layers in the radial direction is the same as that of the first interlayer 30 With the second interlayer 40, this creation can respectively correspondingly recover five different liquids and gases; or there may be no first interlayer 30 and second interlayer 40 but only a fixed inner layer 20 and a moving outer layer 50, so that This creation can respectively correspondingly recover two different liquids and gases.

5 and 6, when the lifting mechanism 70 is not activated and the wafer substrate 10 is located in the fixed inner ring for etching, the reacted chemical liquid will sequentially follow the inner main ring wall 21 and the inner ring baffle 25 , And the inner extending ring plate 26 flow and drip onto the inner bottom plate 22, and then flow along the inner bottom plate 22 to the lower liquid perforation 221 and be recovered by the inner liquid pipe 23, as shown in FIG. 5 The reacted gas will bypass the inner layer ring baffle 25 and the inner layer extension ring plate 26 and be recovered by the pumping pump through the inner layer gas pipeline 24, as shown in FIG. 6.

7 and 8, when the lifting slide 74 of the lifting mechanism 70 abuts against the bottom end of the first lifting slide 71, the second lifting slide 72, and the outer lifting slide 73, the lift After the driving device 76 pushes up the jacking slide 74, the jacking slide 74 will push up and move the first jacking slide 74 through the first jacking slide 71, the second jacking slide 72, and the outer jacking slide 73. The main ring wall 31, the second main ring wall 41, and the outer main ring wall 51 make the three move upward together and separate from the fixed inner layer 20.

At this time, the top edge of the first main ring wall 31 and the top edge of the inner main ring wall 21 are separated from each other and open the first gas space 82, and the first gas space 82 is connected to the common gas via the first liquid-containing ring groove 81 Space 611, by which the pumping pump can extract and recover the chemical gas after the reaction in the first gas space 82, that is, the chemical gas will flow around the first extending ring plate 34 and the inner liquid-containing ring wall 27 in sequence To the common gas space 611 to be extracted.

Moreover, if the wafer substrate 10 is moved to the periphery corresponding to the top edge of the first main ring wall 31 and the top edge of the inner main ring wall 21, the reacted chemical can be removed when the wafer substrate 10 is rotated. The liquid is thrown into the first gas space 82, so that the chemical liquid will follow the inner inclined section 212 and the inner body section 211 of the inner main ring wall 21 in sequence, or along the first main ring wall 31 in sequence. The inner surface of the first ring baffle 33, the top surface of the first ring baffle 33, and the inner surface of the first extension ring plate 34 flow and drip into the first liquid-containing ring groove 81, and then can be recovered by the first liquid pipeline 32.

9 and 10, when the lateral driving device 75 of the lifting mechanism 70 moves the lifting slide 74 to abut against the bottom end of the second lifting slide 72 and the outer lifting slide 73, but does not abut When the first jacking slide bar 71 is used, after the lifting drive device 76 pushes up the jacking slide 74, the jacking slide 74 will be pushed up and moved through the second jacking slide 72 and the outer jacking slide 73 The second main ring wall 41 and the outer main ring wall 51 move both upwards together and separate from the first interlayer 30 and the fixed inner layer 20; at this time, since the first jacking slide 71 is not pushed, the first A main ring wall 31 will remain stationary.

At this time, the top edge of the second main ring wall 41 and the top edge of the first main ring wall 31 are separated from each other and open the second gas space 84, and the second gas space 84 is connected to the common gas through the second liquid-containing ring groove 83 Space 611, by which the pumping pump can extract and recover the chemical gas after the reaction in the second gas space 84, that is to say, the chemical gas will bypass the second extension ring plate and the first liquid ring wall 35 and flow to The common gas space 611 is extracted.

In addition, if the wafer substrate 10 is moved to the periphery corresponding to the top edge of the second main ring wall 41 and the top edge of the first main ring wall 31, the reacted chemical can be removed when the wafer substrate 10 is rotated. The liquid is thrown into the second gas space 84, so that the chemical liquid will follow the first inclined section 312 and the first body section 311 of the first main ring wall 31 in sequence, or along the second main ring wall 41 in sequence The inner surface of the second ring baffle 42, the top surface of the second ring baffle 42, and the inner surface of the second extension ring plate flow and drip into the second liquid-containing ring groove 83, and then can be recovered by the second liquid pipeline 44.

Please refer to FIGS. 11 and 12, when the lateral driving device 75 of the lifting mechanism 70 moves the lifting slide 74 to abut against the bottom end of the outer lifting slide 73, but not against the second lifting slide 72 And the first jacking slide bar 71, after the lifting drive device 76 pushes the jacking slide 74 upwards, the jacking slide 74 will push up and move the main ring wall of the outer layer 50 through the outer jacking slide bar 73 to make it Move upward and separate from the second interlayer 40, the first interlayer 30, and the fixed inner layer 20; at this time, because the second jacking slide 72 and the first jacking slide 71 are not pushed, the second main ring The wall 41 and the first main ring wall 31 will remain stationary.

At this time, the top edge of the outer main ring wall 51 and the top edge of the second main ring wall 41 are separated from each other and open the outer gas space 86, and the outer gas space 86 is connected to the common gas space 611 via the outer liquid ring groove 85, by The gas pump can extract and recover the chemical gas after the reaction in the outer gas space 86, which means that the chemical gas will bypass the outer extension ring plate and the second liquid ring wall 43 in order to flow into the common gas space 611. Extract.

Moreover, if the wafer substrate 10 is moved to the periphery corresponding to the top edge of the outer main ring wall 51 and the top edge of the second main ring wall 41, the reacted chemical liquid can be removed when the wafer substrate 10 is rotated. Throw into the outer gas space 86, so that the chemical liquid will follow the second inclined section and the second body section of the second main ring wall 41 in sequence, or along the inner surface and outer layer of the outer main ring wall 51 in sequence. The top surface of the ring baffle 52 and the inner surface of the outer extending ring plate flow and drip into the outer liquid-containing ring groove 85, and then can be recovered by the outer liquid pipeline 53.

The advantage of this creation is that the inner layer liquid pipeline 23 and the inner layer gas pipeline 24 penetrate the substrate 10 and communicate with the inner side of the inner main ring wall 21, and the top opening of the inner layer gas pipeline 24 is higher than that of the inner layer liquid The top of the pipe 23 is open, so when the wafer substrate 10 is located inside the inner main ring wall 21 for etching, the reacted chemical liquid can flow to the processing system through the inner liquid pipe 23, and the reacted chemical gas can pass through The inner gas pipeline 24 is drawn away, and because the opening of the inner gas pipeline 24 is relatively high, the reacted chemical liquid will not flow into the inner gas pipeline 24.

In addition, the outer main ring wall 51 is movably provided on the radially outer side of the inner main ring wall 21, and the outer ring baffle 52 is formed on the inner side of the outer main ring wall 51 and extends inward and downward to the outer ring baffle. The inner edge of 52 is located above the outer liquid ring groove 85, and the outer liquid pipe 53 penetrates the substrate 10 and is connected to the bottom of the outer liquid ring groove 85, so when the outer main ring wall 51 is upward relative to the inner main ring wall 21 When the wafer substrate 10 is moved between the top edge of the outer main ring wall 51 and the top edge of the inner main ring wall 21 for etching, the reacted chemical liquid will be thrown into the outer gas space 86 and move along The outer surface of the inner main ring wall 21 flows into the outer liquid-containing ring groove 85, or flows along the inner surface of the outer main ring wall 51 to the outer ring baffle 52 and drips into the outer layer from the inner edge of the outer ring baffle 52 The liquid-containing ring groove 85 is then recovered by the outer liquid pipeline 53, so it will not flow into the inner liquid pipeline 23 to mix with other chemical liquids for recovery. The reacted chemical gas can flow into the common gas space 611 through the outer gas space 86, bypassing the top edge of the outer ring baffle 52 and the inner liquid ring wall 27, and is finally pumped through the common gas pipeline 62. Take away and recycle.

In this way, the present creation can move the outer layer 50 up and down through the lifting mechanism 70 and adjust the etching position of the wafer substrate 10 to perform the etching reactions of different liquid medicines and simultaneously recover the liquid medicines and the reacted chemical gases and chemical liquids. Therefore, the burden of subsequent processing can be effectively reduced, and the production of toxic substances or further pollution can be avoided.

Moreover, by adding one or more interlayers between the fixed inner layer 20 and the mobile outer layer 50, and each interlayer is arranged in the same manner as the aforementioned fixed inner layer 20 and the mobile outer layer 50, that is, the layers can be moved sequentially. The ring baffles and liquid pipelines of each layer correspond to the liquid-containing ring grooves formed on the previous layer, and are connected to the lifting mechanism 70 to control the lifting respectively. In this way, it can further increase the recovery of this creation. The quantity of different liquid medicaments can meet the actual needs of use.

The above description is only the preferred embodiment of the creation, and does not limit the creation in any form. Although the creation has been disclosed in the preferred embodiment as above, it is not intended to limit the creation. Any technical field has Generally knowledgeable persons, without departing from the scope of this creative technical solution, can use the technical content disclosed above to make slight changes or modifications to equivalent embodiments with equivalent changes. However, any content that does not deviate from this creative technical solution is based on this Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence of the creation still fall within the scope of the technical solution for creation.

10: substrate 20: fixed inner layer 21: Inner main ring wall 211: Inner body segment 212: Inner Inclined Section 22: inner bottom plate 221: Liquid Piercing 23: Inner liquid pipeline 24: Inner gas pipeline 25: inner ring baffle 26: inner extension ring plate 27: inner liquid ring wall 30: first mezzanine 31: The first main ring wall 311: The first body segment 312: The first inclined section 313: The first sealing section 32: The first liquid line 33: The first ring baffle 34: The first extension ring plate 35: The first liquid ring wall 40: second mezzanine 41: The second main ring wall 42: The second ring baffle 43: The second liquid ring wall 44: second liquid line 50: Move the outer layer 51: Outer main ring wall 52: Outer ring baffle 53: Outer liquid line 61: Gas ring wall 611: Common Gas Space 62: Common gas pipeline 70: Lifting mechanism 71: The first jacking slider 72: The second jacking slider 73: Outer layer jacking slider 74: Lifting slide 75: Lateral drive 76: Lifting drive device 81: The first liquid ring groove 82: The first gas space 83: The second liquid ring groove 84: second gas space 85: Outer liquid ring groove 86: Outer Gas Space

Figure 1 is the three-dimensional appearance of this creation. Figure 2 is a side view of this creation. Figure 3 is a partial enlargement of the lifting mechanism of this creation. Figure 4 is a partial enlarged view of the positions of the pipelines on the substrate of this creation. Figure 5 is a schematic diagram of the flow of the liquid recovered in this creation to fix the inner layer. Figure 6 is a schematic diagram of the flow of gas recovered in the fixed inner layer in this creation. Figure 7 is a side cross-sectional view of the first interlayer, the second interlayer, and the moving outer layer of this creation after moving upward. Figure 8 is a schematic diagram of the flow of gas and gas recovered in the first interlayer in this creation. Figure 9 is a side cross-sectional view of the second mezzanine layer and the moving outer layer of this creation after moving upward. Figure 10 is a schematic diagram of the flow of gas and gas recovered in the second interlayer in this creation. Figure 11 is a cross-sectional side view of the moving outer layer of this creation after it has moved upward. Figure 12 is a schematic diagram of the flow of gas and gas recovered by moving the outer layer.

20: fixed inner layer

21: Inner main ring wall

211: Inner body segment

212: Inner Inclined Section

22: inner bottom plate

221: Liquid Piercing

23: Inner liquid pipeline

25: inner ring baffle

26: inner extension ring plate

27: inner liquid ring wall

Claims (10)

A gas-liquid separation and stratification independent recovery device, which contains A substrate; A fixed inner layer, which contains An inner main ring wall, the bottom edge of which is fixed on the base plate; An inner liquid-containing ring wall, which is located on the radially outer side of the inner main ring wall and forms a first liquid-containing ring groove with the inner main ring wall; An inner liquid pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall; An inner gas pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall, and the top opening of the inner gas pipeline is higher than the top opening of the inner liquid pipeline; A first interlayer, which contains A first main ring wall, which can move up and down relative to the fixed inner layer and is arranged on the radially outer side of the inner liquid-containing ring wall; a first main ring wall and the inner main ring wall form a A gas space, and the top edge of the first main ring wall is selectively close to the top edge of the inner main ring wall, thereby closing the first gas space; A first ring baffle formed on the inner side surface of the first main ring wall, and extending obliquely downward toward the radial inner side of the first main ring wall until the inner edge of the first ring baffle is located at the first Above the liquid ring groove; A first liquid-containing ring wall, which is located on the radially outer side of the first main ring wall and forms a second liquid-containing ring groove with the first main ring wall; A first liquid pipeline that penetrates the substrate and communicates with the bottom of the first liquid-containing ring groove; A second interlayer, which contains A second main ring wall, which can move up and down relative to the first interlayer and is disposed on the radially outer side of the first liquid-containing ring wall; a second main ring wall is formed between the second main ring wall and the first main ring wall. Two gas spaces, and the top edge of the second main ring wall is selectively tightly attached to the top edge of the first main ring wall, thereby closing the second gas space; A second ring baffle is formed on the inner side of the second main ring wall and extends downwardly and obliquely toward the radial inner side of the second main ring wall until the inner edge of the second ring baffle is located at the second Above the liquid ring groove; A second liquid-containing ring wall, which is located on the radially outer side of the second main ring wall and forms an outer liquid-containing ring groove with the second main ring wall; A second liquid pipeline which movably penetrates the substrate and communicates with the bottom of the second liquid-containing ring groove; A mobile outer layer, which contains An outer main ring wall, which is arranged on the radially outer side of the second liquid-containing ring wall so as to move up and down relative to the second interlayer; an outer gas space is formed between the outer main ring wall and the second main ring wall , And the top edge of the outer main ring wall is selectively tightly attached to the top edge of the second main ring wall, thereby closing the outer gas space; An outer layer ring baffle formed on the inner side of the outer layer main ring wall and extending obliquely downward toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid ring groove ； An outer layer liquid pipeline that movably penetrates the substrate and is connected to the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the substrate, and the top edge is relatively slidably close to the outer surface of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall The first interlayer, the second interlayer, and the mobile outer layer are movably arranged in the common gas space, and the first gas space, the second gas space, and the outer gas space are connected to the common gas space ； A common gas pipeline connected to the common gas space; An air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lifting mechanism is connected to the first interlayer, the second interlayer, and the mobile outer layer, and can respectively control the first interlayer, the second interlayer, and the mobile outer layer to move up and down. The gas-liquid separation and stratification independent recovery device as described in claim 1, wherein: The inner main ring wall of the fixed inner layer includes An inner body section, the bottom edge of which is fixed to the base plate; An inner layer inclined section formed on the top edge of the inner layer body section and extending obliquely upward toward the radial inner side of the inner layer main ring wall; The first main ring wall of the first interlayer includes A first body section, which is arranged on the radially outer side of the inner liquid-containing ring wall so as to be movable up and down relative to the fixed inner layer; A first inclined section is formed on the top edge of the first main ring wall and extends upward obliquely toward the radially inner side of the first main ring wall; the end of the first inclined section is supported by the first body section Move up and down to selectively close to the end of the inclined section of the inner layer, thereby closing the first gas space. The gas-liquid separation layered independent recovery device according to claim 2, wherein the first main ring wall of the first interlayer further comprises A first sealing section formed at the end of the first inclined section and extending downward; the first sealing section is selectively moved in the radial direction of the first sealing section by the up and down movement of the first body section The outer side abuts against the end of the inclined section of the inner layer, thereby sealing the first gas space. The gas-liquid separation and stratification independent recovery device according to any one of claims 1 to 3, wherein: The fixed inner layer further comprises An inner bottom plate, which is obliquely arranged on the radially inner side of the inner main ring wall; a liquid perforation is formed at the bottom end of the inner bottom plate; The top end of the inner layer liquid pipeline abuts against the bottom surface of the inner layer bottom plate, and the top end opening of the inner layer liquid pipeline communicates with the liquid perforation; The inner layer gas pipeline penetrates the inner layer bottom plate, and the top opening of the inner layer gas pipeline protrudes from the top surface of the inner layer bottom plate. The gas-liquid separation layered independent recovery device according to any one of claims 1 to 3, wherein the fixed inner layer further comprises An inner ring baffle formed on the inner side of the inner main ring wall and extending obliquely downward toward the radial inner side of the inner main ring wall; in the radial direction of the inner main ring wall, The inner edge of the inner layer ring baffle is located inside the top opening of the inner layer gas pipeline. The gas-liquid separation layered independent recovery device according to claim 5, wherein the fixed inner layer further comprises An inner layer extension ring plate formed on the inner edge of the inner layer ring baffle plate and extending downward; the height of the bottom edge of the inner layer extension ring plate is lower than the height of the top opening of the inner layer gas pipeline position. The gas-liquid separation and stratification independent recovery device according to any one of claims 1 to 3, wherein the first interlayer further comprises A first extension ring plate formed on the inner edge of the first ring baffle plate and extending downward, the height of the bottom edge of the first extension ring plate is lower than the height of the top edge of the inner liquid-containing ring wall position. The gas-liquid separation and stratification independent recovery device according to any one of claims 1 to 3, wherein the lifting mechanism includes A first lifting slide bar, which can move up and down through the base plate and abuts against the bottom edge of the first main ring wall; A second lifting slide bar, which can move up and down through the base plate and abuts against the bottom edge of the second main ring wall; An outer jacking slide bar, which can move up and down through the base plate and abuts against the bottom edge of the outer main ring wall; A jacking slide seat, which is movably arranged under the first jacking slide bar, the second jacking slide bar, and the outer layer jacking slide bar; A lateral drive device capable of moving the jacking slide laterally, thereby selectively making the jacking slide abut against the first jacking slide bar, the second jacking slide bar, or the outer jacking The bottom end of the slider; A lifting drive device capable of pushing up the jacking slide, thereby causing the jacking slide to push up the first jacking slide bar, the second jacking slide bar, or the outer jacking slide bar , And push up the first main ring wall, the second main ring wall, or the outer main ring wall by the first jacking slide bar, the second jacking slide bar, or the outer jacking slide bar . The gas-liquid separation and stratification independent recovery device according to any one of claims 1 to 3, wherein the bottom edge of the first liquid-containing ring wall of the first interlayer is fixed on the bottom of the first main ring wall And the first liquid-containing ring wall moves with the first main ring wall. A gas-liquid separation and stratification independent recovery device, which contains A substrate; A fixed inner layer, which contains An inner main ring wall, the bottom edge of which is fixed on the base plate; An inner liquid-containing ring wall, the bottom edge of which is fixed on the substrate and located at the radially outer side of the inner main ring wall, and an outer liquid-containing ring groove is formed between the inner main ring wall and the inner main ring wall; An inner liquid pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall; An inner gas pipeline that penetrates the substrate and communicates with the inner side of the inner main ring wall, and the top opening of the inner gas pipeline is higher than the top opening of the inner liquid pipeline; A mobile outer layer, which contains An outer main ring wall, which can move up and down with respect to the fixed inner layer and is disposed on the radially outer side of the inner liquid-containing ring wall; an outer gas space is formed between the outer main ring wall and the inner main ring wall , And the top edge of the outer main ring wall selectively adheres to the top edge of the inner main ring wall, thereby closing the outer gas space; An outer layer ring baffle formed on the inner side of the outer layer main ring wall and extending obliquely downward toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid ring groove; An outer layer liquid pipeline which penetrates the substrate and communicates with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the substrate, and the top edge is relatively slidably close to the outer surface of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall Space, the mobile outer layer is movably arranged in the common gas space, and the outer gas space is connected to the common gas space; A common gas pipeline connected to the common gas space; An air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lifting mechanism is connected to the moving outer layer and can control the moving outer layer to move up and down.

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