TWI719009B - Cap layer, polishing pad with cap layer, method for avoiding polishing pad deformation and polishing method - Google Patents
Cap layer, polishing pad with cap layer, method for avoiding polishing pad deformation and polishing method Download PDFInfo
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Abstract
Description
本發明是有關於一種蓋層、研磨墊、研磨墊的應用方法及研磨方法,且特別是有關於一種蓋層、具有蓋層的研磨墊、避免研磨墊形變的方法及研磨方法。The invention relates to a cap layer, a polishing pad, an application method of the polishing pad, and a polishing method, and more particularly to a cap layer, a polishing pad with a cap layer, a method for avoiding deformation of the polishing pad, and a polishing method.
隨著產業的進步,平坦化製程經常被採用為生產各種元件的製程。在平坦化製程中,研磨製程經常為產業所使用。研磨製程是將研磨物件吸附於研磨系統之研磨頭,並施加一壓力以將其壓置於研磨墊上,且讓研磨物件與研磨墊彼此進行相對運動,而使其表面逐漸平坦,來達成平坦化的目的。With the advancement of the industry, the planarization process is often adopted as a process for producing various components. In the planarization process, the polishing process is often used by the industry. The polishing process is to absorb the polishing object to the polishing head of the polishing system, and apply a pressure to press it on the polishing pad, and allow the polishing object and the polishing pad to move relative to each other to gradually flatten the surface to achieve flattening. the goal of.
在進行研磨之前,研磨墊須先置放並固定於研磨平台上。然而,由於研磨墊容易因為溫度變化或是應力的影響而產生形變(或翹曲),若是研磨墊產生形變(或翹曲),將會影響其固定於研磨平台上的平整度。Before polishing, the polishing pad must be placed and fixed on the polishing platform. However, since the polishing pad is easily deformed (or warped) due to temperature changes or stress, if the polishing pad is deformed (or warped), it will affect the flatness of the polishing pad fixed on the polishing platform.
因此,如何提供一種使研磨墊不易形變(或翹曲)的方法,並且能夠使研磨墊平整固定於研磨平台上就成為相當重要的研究課題。Therefore, how to provide a method to prevent the polishing pad from being deformed (or warped) and to make the polishing pad smoothly fixed on the polishing platform has become a very important research topic.
本發明提供一種蓋層、具有蓋層的研磨墊、避免研磨墊形變的方法以及研磨方法,使研磨墊不易產生變形,可以平整固定於研磨平台上。The invention provides a cover layer, a polishing pad with a cover layer, a method for avoiding deformation of the polishing pad, and a polishing method, so that the polishing pad is not easily deformed and can be flatly fixed on a polishing platform.
本發明所提供的研磨墊,包括研磨層、溝槽圖案以及蓋層。研磨層具有第一表面以及第二表面。溝槽圖案位於研磨層之第一表面。蓋層位於第一表面上且覆蓋溝槽圖案。The polishing pad provided by the present invention includes a polishing layer, a groove pattern, and a cap layer. The polishing layer has a first surface and a second surface. The groove pattern is located on the first surface of the polishing layer. The cap layer is located on the first surface and covers the groove pattern.
本發明所提供的避免研磨墊形變的方法,包括提供研磨墊,研磨墊包括研磨層、溝槽圖案以及蓋層。研磨層具有第一表面以及第二表面。溝槽圖案位於研磨層之第一表面。蓋層位於第一表面上且覆蓋溝槽圖案。The method for avoiding deformation of the polishing pad provided by the present invention includes providing a polishing pad. The polishing pad includes a polishing layer, a groove pattern, and a cap layer. The polishing layer has a first surface and a second surface. The groove pattern is located on the first surface of the polishing layer. The cap layer is located on the first surface and covers the groove pattern.
本發明所提供的研磨方法,用於研磨一研磨物件,包括提供研磨墊;將研磨墊放置於研磨平台上;向研磨平台的方向對蓋層施予一向下壓力,以使研磨墊固定於研磨平台上;將蓋層自研磨墊移除;以及將研磨物件置於研磨墊上以進行研磨程序。其中,研磨墊包括研磨層、溝槽圖案以及蓋層。研磨層具有第一表面以及第二表面。溝槽圖案位於研磨層之第一表面。蓋層位於第一表面上且覆蓋溝槽圖案,其中,蓋層包括覆蓋部以覆蓋研磨層之第一表面並與研磨層重疊設置。The polishing method provided by the present invention is used for polishing a polishing object, including providing a polishing pad; placing the polishing pad on the polishing platform; applying a downward pressure to the cover layer in the direction of the polishing platform to fix the polishing pad on the polishing platform. On the platform; remove the cover layer from the polishing pad; and place the polishing object on the polishing pad for the polishing process. Wherein, the polishing pad includes a polishing layer, a groove pattern, and a cap layer. The polishing layer has a first surface and a second surface. The groove pattern is located on the first surface of the polishing layer. The cap layer is located on the first surface and covers the groove pattern, wherein the cap layer includes a covering portion to cover the first surface of the polishing layer and overlap the polishing layer.
基於上述,由於本發明的研磨墊包括研磨層、溝槽圖案以及蓋層,且所述蓋層可在後續程序中自研磨墊移除。因此,當進行研磨程序之前,將蓋層壓於研磨層上能夠使研磨墊平整固定於研磨平台上,減少研磨墊產生形變(或翹曲),亦可避免在研磨層表面產生汙染。Based on the above, the polishing pad of the present invention includes a polishing layer, a groove pattern, and a cap layer, and the cap layer can be removed from the polishing pad in a subsequent process. Therefore, before performing the polishing process, laminating the cover on the polishing layer can make the polishing pad flatly fixed on the polishing platform, reducing the deformation (or warpage) of the polishing pad, and avoiding pollution on the surface of the polishing layer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, for example: up, down, left, right, front or back, etc., are only directions for referring to the attached drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.
圖1A至圖1D是將本發明一實施方式之研磨墊應用於研磨系統之研磨程序的過程側視示意圖,以及圖2是研磨程序的流程圖。1A to 1D are schematic side views of the process of applying the polishing pad according to an embodiment of the present invention to the polishing process of the polishing system, and FIG. 2 is a flowchart of the polishing process.
根據本發明提出的研磨方法,其是將本發明所揭露的研磨墊應用於研磨程序中,用於研磨一研磨物件。According to the polishing method proposed in the present invention, the polishing pad disclosed in the present invention is applied to a polishing process for polishing a polishing object.
請同時參照圖1A及圖2的步驟S201和步驟S202。首先,提供研磨墊100,其至少包括研磨層102,且在研磨層102上方具有蓋層106。接著,將研磨墊100放置於研磨平台120上。Please refer to FIG. 1A and step S201 and step S202 of FIG. 2 at the same time. First, a
參照圖1B及圖2的步驟S203。待研磨墊100放置於研磨平台120上之後,向研磨平台120的方向對蓋層106施予一向下壓力(受力方向如箭頭方向所示),以使研磨墊100固定於研磨平台120上,固定的方式例如是使用黏著、真空吸附、靜電吸附或是磁力吸附等方式,但並非用以限定本發明之範圍,亦可選擇其他合適的固定方式。若研磨墊100使用黏著方式固定於研磨平台120上,研磨墊100下方則另外包括一背膠層(未繪示),例如是使用感壓雙面膠將研磨墊100黏著於研磨平台120上。Refer to FIG. 1B and step S203 in FIG. 2. After the
接下來請參照圖1C及圖2的步驟S204。將蓋層106自研磨墊100中移除,此時研磨平台120上的研磨墊100只留下研磨層102。Next, please refer to FIG. 1C and step S204 in FIG. 2. The
最後,參照圖1D及圖2的步驟S205,將研磨物件10置於不具有蓋層106的研磨墊100上以進行研磨程序。Finally, referring to FIG. 1D and step S205 in FIG. 2, the
值得說明的是,經由前述將研磨墊100固定於研磨平台120的步驟為對蓋層106施予壓力,而非直接接觸研磨層102表面。此外,在研磨墊100固定於研磨平台120上之後,將蓋層106自研磨墊100移除以進行研磨程序。因此,可避免操作人員或所使用工具直接接觸研磨層102表面,以減少在研磨層102表面產生汙染(缺陷源),進而使研磨物件減少刮傷或缺陷的機率。It is worth noting that the step of fixing the
圖3A是根據圖1A所示框線區域之研磨墊局部放大示意圖(未依照實際比例繪製)。根據本實施方式,研磨墊100,至少包括研磨層102、溝槽圖案104以及蓋層106。研磨層102具有第一表面102a以及第二表面102b。溝槽圖案104位於研磨層102之第一表面102a。蓋層106位於第一表面102a上方並且覆蓋溝槽圖案104。Fig. 3A is a partial enlarged schematic diagram of the polishing pad according to the frame area shown in Fig. 1A (not drawn according to actual scale). According to this embodiment, the
在研磨墊100中,蓋層106包括覆蓋部106a,覆蓋部106a覆蓋研磨層102之第一表面102a而與研磨層102重疊設置。在本實施方式中,蓋層106之覆蓋部106a覆蓋溝槽圖案104,但未填入溝槽圖案104內,以使蓋層106與溝槽圖案104之間具有完整的溝槽空隙。蓋層106的材料例如是聚合物、金屬或是陶瓷材料,但並非用以限定本發明之範圍。蓋層106之覆蓋部106a的平均厚度例如為介於0.05至5 mm,覆蓋部106a例如是以重力方式壓置於研磨層102上,或是以黏貼方式與研磨層102重疊設置,由於覆蓋部106a具有一定的抗形變強度,因此可減少研磨墊100因為溫度變化或是應力的影響而形變(或翹曲)。In the
蓋層106之覆蓋部106a的下表面可選擇包括黏著層(未繪示),其與研磨層102之第一表面102a以可剝離的方式相黏。黏著層與研磨層102之第一表面102a間的黏著力(例如為小於1.5 kgf/inch)小於黏著層本身的內聚力(cohesive force),並且小於黏著層與覆蓋部106a間的黏著力(例如為大於1.5 kgf/inch)。因此,蓋層106之覆蓋部106a連同黏著層可從研磨層102之第一表面102a上剝離,而不會留下殘膠,甚至可重複使用(黏貼及剝離)於不同的研磨層102上。在一實施例中,黏著層配置於覆蓋部106a與研磨層102之第一表面102a的部份或整個接觸面上,黏著層例如為雙面膠,此雙面膠其中與覆蓋部106a相黏面之膠系例如為壓克力膠系或熱熔膠系,而與研磨層102之第一表面102a相黏面之膠系例如為矽膠系或橡膠系。在另一實施例中,黏著層配置於覆蓋部106a的整個下表面,覆蓋部106a連同黏著層例如為單面膠,此單面膠其中與研磨層102之第一表面102a相黏面之膠系例如為矽膠系或橡膠系,而覆蓋部106a為此單面膠之承載膜(carrier film),例如為聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)膜。The lower surface of the
蓋層106可選擇包括握持部106b,握持部106b與覆蓋部106a連接且不與研磨層102重疊設置,握持部106b使得將蓋層106自研磨墊100中移除(如圖2的步驟S204)較為容易。在一實施例中,握持部106b例如是與覆蓋部106a一體相連並為覆蓋部106a向外延伸的一個部分,也就是與覆蓋部106a具有相同材料並且沒有彼此的分界線。在另一實施例中,握持部106b例如是與覆蓋部106a相連接(例如是黏著方式相連接)的分別個體,握持部106b例如是另外黏在覆蓋部106a邊緣的膠帶。The
為了更清楚描述本發明實施方式,請參考圖3B。圖3B是圖1A研磨系統的上視圖,由此可看出,在研磨墊100中,蓋層106的覆蓋部106a覆蓋於研磨層102(以細虛線表示)上方,而握持部106b則為覆蓋部106a相連接的一個部份。圖3B中所繪示為單一個長方形握持部106b,但本發明不限於此,握持部106b可以是複數個,也可以具有不同形狀,甚至可選擇為覆蓋部106a所有周圍皆向外延伸的環狀握持部106b。另外,研磨層102上可具有多種不同的溝槽圖案分布,可以是同心環狀、不同心環狀、橢圓環狀、波浪環狀、不規則環狀、多條直線狀、平行直線狀、放射直線狀、放射弧線狀、螺旋狀、多角格狀、或其組合。此處僅為例示性繪製為同心圓(以粗虛線表示),但本發明不限於此。In order to describe the embodiments of the present invention more clearly, please refer to FIG. 3B. FIG. 3B is a top view of the polishing system of FIG. 1A. It can be seen that in the
在本實施方式中,研磨層102例如是由聚合物基材所構成,其中聚合物基材可以是聚酯(polyester)、聚醚(polyether)、聚氨酯(polyurethane)、聚碳酸酯(polycarbonate)、聚丙烯酸酯(polyacrylate)、聚丁二烯(polybutadiene)、或其餘經由合適之熱固性樹脂(thermosetting resin)或熱塑性樹脂(thermoplastic resin)所合成之聚合物基材。研磨層102除聚合物基材外,另可包含導電材料、研磨顆粒、微球體(micro-sphere)或可溶解添加物於此聚合物基材中。In this embodiment, the
圖4是本發明另一實施方式之研磨墊示意圖(未依照實際比例繪製)。在本實施方式中,研磨墊200類似於圖3A及圖3B中的研磨墊100,因此,在圖4中,研磨墊200的元件以及相關敘述可參考圖3A及圖3B的研磨墊100,與圖3A及圖3B相同的元件以相同的符號表示,且相同元件所具有的相同特徵將不再重複贅述。研磨墊200與研磨墊100的差異在於,蓋層106可更包括突出部106c,其與覆蓋部106a相連接。突出部106c可填入於溝槽圖案104內,突出部106c例如為具有與溝槽圖案104互補之形狀。4 is a schematic diagram of a polishing pad according to another embodiment of the present invention (not drawn according to actual scale). In this embodiment, the
請參照圖4,詳細而言,蓋層106之突出部106c的高度可例如為溝槽圖案104的深度的5%至小於100%(例如為溝槽圖案104的深度的10%至90%;20%至80%;30%至70%;40%至60%;或50%),換言之,當突出部106c填入溝槽圖案104時,突出部106c填入至溝槽圖案104的深度為溝槽圖案104的深度的5%至小於100%,以使蓋層106與溝槽圖案104之間具有部份的溝槽空隙。圖4所繪示突出部106c皆具有相同高度,但並非用以限定本發明之範圍,突出部106c亦可選擇具有不同高度,使得在不同區域填入至溝槽圖案104的深度不同。4, in detail, the height of the
值得一提的是,蓋層106的突出部106c具有與溝槽圖案104互補之形狀並填入於溝槽圖案104內,突出部106c可限制溝槽圖案104的尺寸變化,也就是使研磨層102不會內凹或外凸,因此蓋層106除了如圖3A及圖3B的研磨墊100所述的功能之外,蓋層106具有的突出部106c可進一步減少研磨墊200產生形變(或翹曲)。It is worth mentioning that the
圖5是本發明另一實施方式之研磨墊示意圖(未依照實際比例繪製)。在本實施方式中,研磨墊300類似於圖3A及圖3B中的研磨墊100,因此,在圖5中,研磨墊300的元件以及相關敘述可參考圖3A及圖3B的研磨墊100,與圖3A及圖3B相同的元件以相同的符號表示,且相同元件所具有的相同特徵將不再重複贅述。研磨墊300與研磨墊100的差異在於,蓋層106可更包括突出部106c,其與覆蓋部106a相連接。突出部106c可填入於溝槽圖案104內,突出部106c例如為具有與溝槽圖案104互補之形狀。Fig. 5 is a schematic diagram of a polishing pad according to another embodiment of the present invention (not drawn according to actual scale). In this embodiment, the
請參照圖5,溝槽圖案104的深度與突出部106c的高度一致。進一步來說,蓋層106之突出部106c的高度可例如為溝槽圖案104的深度的100%,換言之,突出部106c可完整填入溝槽圖案104內,以使蓋層106與溝槽圖案104之間不具有溝槽空隙。Referring to FIG. 5, the depth of the
比較圖4及圖5所揭露的實施方式,其差異在於,蓋層106之突出部106c的高度。舉例而言,當突出部106c的高度為溝槽圖案104的深度的5%至小於100%時,突出部106c僅填入溝槽圖案104部份深度(如圖4所示);相對地,當突出部106c的高度為溝槽圖案104的深度的100%時,突出部106c則會填滿整個溝槽圖案104(如圖5所示)。Comparing the embodiments disclosed in FIG. 4 and FIG. 5, the difference lies in the height of the
值得說明的是,在本實施方式中,當突出部106c的高度為溝槽圖案104的深度的100%(即突出部106c填滿整個溝槽圖案104)時,可利於藉由施加壓力於蓋層106,使蓋層106獲得一朝向研磨平台方向的力(受力方向請參考圖5中箭頭所示方向),此時研磨墊300可均勻受力。也就是說,不論研磨墊300用何種方式固定於研磨平台上時,研磨墊300背面對應至溝槽圖案104區域及非溝槽圖案區域所受壓力一致,因此可使研磨墊300更平整地固定於研磨平台上,更可進一步減少研磨墊300產生形變(或翹曲)。It is worth noting that, in this embodiment, when the height of the
另外,本發明提出一種避免研磨墊形變的方法及一種研磨方法,其是將本發明所揭露的研磨墊應用於研磨程序中,步驟揭露如下。In addition, the present invention provides a method for avoiding deformation of the polishing pad and a polishing method, which apply the polishing pad disclosed in the present invention to a polishing process, and the steps are disclosed as follows.
首先,提供研磨墊,其包括研磨層、溝槽圖案以及蓋層。研磨層具有第一表面以及第二表面,溝槽圖案位於研磨層之第一表面。蓋層位於第一表面上方並且覆蓋溝槽圖案,以避免研磨墊形變。接著,將研磨墊放置於研磨平台上,再向研磨平台的方向對蓋層施予一向下壓力,以使研磨墊固定於研磨平台上。最後,將蓋層自研磨墊移除以進行研磨程序。此外,在一些實施例中,研磨層的第二表面與研磨平台的接觸面之間可以包括背膠層,並且透過如前述對蓋層施加向下的壓力,使得研磨墊可平整黏貼於研磨平台上。First, a polishing pad is provided, which includes a polishing layer, a groove pattern, and a cap layer. The polishing layer has a first surface and a second surface, and the groove pattern is located on the first surface of the polishing layer. The cap layer is located above the first surface and covers the groove pattern to avoid deformation of the polishing pad. Then, the polishing pad is placed on the polishing platform, and then a downward pressure is applied to the cover layer in the direction of the polishing platform, so that the polishing pad is fixed on the polishing platform. Finally, the cap layer is removed from the polishing pad to perform the polishing process. In addition, in some embodiments, a back adhesive layer may be included between the second surface of the polishing layer and the contact surface of the polishing platform, and by applying downward pressure to the cover layer as described above, the polishing pad can be smoothly adhered to the polishing platform on.
上述各實施例中之研磨墊及研磨方法可應用於如半導體、積體電路、微機電、能源轉換、通訊、光學、儲存碟片、及顯示器等元件的製作中所使用之研磨設備及製程,製作這些元件所使用的研磨物件可包括半導體晶圓、ⅢⅤ族晶圓、儲存元件載體、陶瓷基底、高分子聚合物基底、及玻璃基底等,但並非用以限定本發明之範圍。此外,上述各實施例中之研磨墊之研磨層均以單層結構做說明及繪示,研磨層也可以是雙層結構,例如是包括硬度較高(或壓縮較小)之上層及硬度較低(或壓縮較大)之底層,但並非用以限定本發明之範圍,研磨墊之研磨層亦可選擇為多層結構。The polishing pads and polishing methods in the above embodiments can be applied to polishing equipment and processes used in the production of components such as semiconductors, integrated circuits, micro-electro-mechanics, energy conversion, communications, optics, storage discs, and displays. The polishing objects used to fabricate these devices may include semiconductor wafers, IIIV group wafers, storage device carriers, ceramic substrates, high molecular polymer substrates, and glass substrates, but are not intended to limit the scope of the present invention. In addition, the polishing layer of the polishing pad in each of the above embodiments is described and shown in a single-layer structure. The polishing layer can also be a two-layer structure, for example, including a higher hardness (or less compression) upper layer and a lower hardness. The low (or larger compression) bottom layer is not intended to limit the scope of the present invention. The polishing layer of the polishing pad can also be selected as a multilayer structure.
綜上所述,根據本發明所提供的蓋層、具有蓋層的研磨墊、避免研磨墊形變的方法及研磨方法,藉由在研磨墊提供蓋層於研磨層上,可使研磨墊較不易產生形變(或翹曲)。並且,在蓋層與研磨層之間可選擇性地加入黏著層,使蓋層與研磨層之間以可剝離的方式相黏,且在後續程序中將蓋層從研磨墊移除。除此之外,透過施加壓力於蓋層上,可使研磨墊均勻受力,而平整固定於研磨平台上。In summary, according to the capping layer, the polishing pad with the capping layer, the method for avoiding deformation of the polishing pad, and the polishing method provided by the present invention, the polishing pad can be made more difficult by providing a capping layer on the polishing layer. Deformation (or warpage) occurs. In addition, an adhesive layer can be selectively added between the cap layer and the polishing layer, so that the cap layer and the polishing layer are adhered in a peelable manner, and the cap layer is removed from the polishing pad in a subsequent process. In addition, by applying pressure on the cover layer, the polishing pad can be uniformly stressed and fixed on the polishing platform smoothly.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10‧‧‧研磨物件100‧‧‧研磨墊102‧‧‧研磨層102a‧‧‧第一表面102b‧‧‧第二表面104‧‧‧溝槽圖案106‧‧‧蓋層106a‧‧‧覆蓋部106b‧‧‧握持部106c‧‧‧突出部108‧‧‧黏著層110‧‧‧背膠層120‧‧‧研磨平台S201、S202、S203、S204‧‧‧步驟10‧‧‧
圖1A至圖1D是將本發明一實施方式之研磨墊應用於研磨系統之研磨程序的過程側視示意圖。 圖2是研磨程序的流程圖。 圖3A是根據圖1A所示框線區域之研磨墊局部放大示意圖,圖3B是圖1A研磨系統的上視圖(未依照實際比例繪製)。 圖4是本發明另一實施方式之研磨墊示意圖(未依照實際比例繪製)。 圖5是本發明另一實施方式之研磨墊示意圖(未依照實際比例繪製)。1A to 1D are schematic side views of a process of applying a polishing pad according to an embodiment of the present invention to a polishing process in a polishing system. Fig. 2 is a flow chart of the grinding procedure. 3A is a partial enlarged schematic view of the polishing pad according to the frame area shown in FIG. 1A, and FIG. 3B is a top view of the polishing system of FIG. 1A (not drawn according to actual scale). 4 is a schematic diagram of a polishing pad according to another embodiment of the present invention (not drawn according to actual scale). Fig. 5 is a schematic diagram of a polishing pad according to another embodiment of the present invention (not drawn according to actual scale).
100‧‧‧研磨墊 100‧‧‧Lapping Pad
102‧‧‧研磨層 102‧‧‧Grinding layer
102a‧‧‧第一表面 102a‧‧‧First surface
102b‧‧‧第二表面 102b‧‧‧Second surface
104‧‧‧溝槽圖案 104‧‧‧Groove pattern
106‧‧‧蓋層 106‧‧‧Cover
106a‧‧‧覆蓋部 106a‧‧‧covering department
106b‧‧‧握持部 106b‧‧‧Grip
Claims (40)
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CN201720107113.0U CN206780158U (en) | 2016-02-04 | 2017-02-04 | Cover layer and polishing pad with cover layer |
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US20060135051A1 (en) * | 2004-12-20 | 2006-06-22 | Cabot Microelectronics Corporation | Polishing pad with removal features |
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