TWI714492B - 高壓半導體裝置以及相關之電源供應器 - Google Patents

高壓半導體裝置以及相關之電源供應器 Download PDF

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TWI714492B
TWI714492B TW109111595A TW109111595A TWI714492B TW I714492 B TWI714492 B TW I714492B TW 109111595 A TW109111595 A TW 109111595A TW 109111595 A TW109111595 A TW 109111595A TW I714492 B TWI714492 B TW I714492B
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transistor
pin
electrically connected
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TW202139572A (zh
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李振宏
陳漢瑋
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通嘉科技股份有限公司
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    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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    • H01L29/772—Field effect transistors
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M1/00—Details of apparatus for conversion
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Abstract

本發明實施例提供一半導體裝置，包含有第一電晶體、一第二電晶體、一第三電晶體、一高壓接腳、一控制閘接腳、一主源接腳、一取樣接腳、一充電接腳、以及一充電控制接腳。該第一電晶體與該第二電晶體為一垂直式元件，各具有一源端、一閘端、以及一汲端。該第一電晶體之該源端電連接至該主源接腳。該第二電晶體之該源端電連接至該取樣接腳。該第一電晶體與該第二電晶體之該等閘端電連接至該控制閘接腳。該第三電晶體為一垂直式JFET接面場效應電晶體，具有一源端、一控制端、以及一汲端。該第三電晶體之該源端電連接至該充電接腳。該第三電晶體之該控制端電連接至該充電控制接腳。該第一電晶體、該第二電晶體、以及該第三電晶體之該等汲端彼此電連接至該高壓接腳。

Description

高壓半導體裝置以及相關之電源供應器
本發明大致係關於開關式電源轉換器，尤指具有電流取樣與高壓啟動結構之半導體裝置與相關之電源轉換器。
第1圖顯示習知具有返馳式(flyback)架構之一電源轉換器100，用以將一次側的輸入電源VIN轉換為二次側的輸出電源VOUT。輸入電源VIN可能高達260V，透過市電整流後所產生。輸出電源VOUT可能低至5V。
脈衝寬度調變控制器102透過閘輸出接腳GATE控制功率開關NS，其跟電感LP、電流偵測電阻RCS串聯於輸入電源VIN與接地線之間。透過電流偵測接腳CS，脈衝寬度調變控制器102可以偵測流經功率開關NS的電流，據以產生適當的脈衝信號來控制功率開關NS。
脈衝寬度調變控制器102具有高壓啟動功能(high-voltage startup)，整合有高壓啟動裝置104。高壓啟動裝置104透過高壓接腳HV以及電阻RHV，電連接至輸入電源VIN。舉例來說，當輸入電源VIN剛剛連接到一市電時，高壓啟動裝置104可以從高壓接腳HV汲取電流，透過電源接腳VCC，對電源電容CVCC充電，來建立操作電源VCC。操作電源VCC提供脈衝寬度調變控制器102所需的電源。
隨著技術不斷的發展，如何在有限的技術能力內，讓電源轉換器的轉換效率提高並降低電源轉換器的製造成本，是電源設計業者不斷追求的目標。
本發明實施例提供一半導體裝置，包含有第一電晶體、一第二電晶體、一第三電晶體、一高壓接腳、一控制閘接腳、一主源接腳、一取樣接腳、一充電接腳、以及一充電控制接腳。該第一電晶體與該第二電晶體為一垂直式元件，各具有一源端、一閘端、以及一汲端。該第一電晶體之該源端電連接至該主源接腳。該第二電晶體之該源端電連接至該取樣接腳。該第一電晶體與該第二電晶體之該等閘端電連接至該控制閘接腳。該第三電晶體為一垂直式JFET接面場效應電晶體，具有一源端、一控制端、以及一汲端。該第三電晶體之該源端電連接至該充電接腳。該第三電晶體之該控制端電連接至該充電控制接腳。該第一電晶體、該第二電晶體、以及該第三電晶體之該等汲端彼此電連接至該高壓接腳。
本發明實施例提供一電源供應器，包含有一高壓半導體裝置、一脈衝寬度調變(PWM)控制器、一電感、與一電流偵測電阻。該高壓半導體裝置，包含有一第一電晶體、一第二電晶體、以及一第三電晶體。該第一電晶體與該第二電晶體為一垂直式元件，各具有一源端、一閘端、以及一汲端。該第三電晶體為一垂直式JFET接面場效應電晶體，具有一源端、一控制端、以及一汲端。該第一電晶體之該源端電連接至一接地線。該脈衝寬度調變控制器包含有一啟動接腳、一啟動控制接腳、一閘輸出接腳、以及一電流偵測接腳。該啟動接腳電連接至該第三電晶體之該源端。 該啟動控制接腳電連接至該第三電晶體之該控制端。該閘輸出接腳電連接至該第一電晶體與該第二電晶體之該等閘端。該電流偵測接腳電連接至該第二電晶體之該源端。該電感電連接至該第一、第二、第三電晶體之該等汲端。該電流偵測電阻電連接於該第二電晶體之該源端與該接地線之間。
100、200:電源轉換器
102、202:脈衝寬度調變控制器
104:高壓啟動裝置
204:高壓半導體裝置
300:單晶片
302:N型基底
3042、3044、3046:P型體摻雜區
3062、3064、3066:N型重摻雜區
3082、3084:多晶矽閘
309:場氧化層
3102、3104、3106、3107:金屬層
312:背面金屬層
402、404、406:主動區
BS:背面
COUT、CVCC:電源電容
CG:控制閘接腳
CGP:開關控制墊
CS:電流偵測接腳
D:汲端
D1:整流二極體
G:閘端
GATE:閘輸出接腳
GND:接地接腳
GS:主源接腳
GSP:主源墊
HV:高壓接腳
JG:充電控制接腳
JGP:啟動控制墊
JHV:JFET接面場效應電晶體
JS:充電接腳
JSP:啟動源墊
LP:電感
NC、NM:MOS場效應電晶體
NS:功率開關
Pth1、Pth2:電流路徑
P-FOX:場氧化圖案
P-G:閘端圖案
RCS:電流偵測電阻
RHV:電阻
S:源端
SS:取樣接腳
SSP:偵測源墊
STR:啟動接腳
STRC:啟動控制接腳
TF:變壓器
TR:終端環狀區
TS:正面
VCC:操作電源
VCC:電源接腳
VIN:輸入電源
VOUT:輸出電源
第1圖顯示習知具有返馳式(flyback)架構之一電源轉換器。
第2圖為依據本發明所實施的電源供應器，具有返馳式(flyback)架構。
第3圖顯示高壓半導體裝置204的一剖面示意圖。
第4A與4B圖顯示高壓半導體裝置204的兩個上視圖。
在本說明書中，有一些相同的符號，其表示具有相同或是類似之結構、功能、原理的元件，且為業界具有一般知識能力者可以依據本說明書之教導而推知。為說明書之簡潔度考量，相同之符號的元件將不再重述。
在本發明的一實施例中，一單晶片上整合有一兩個增強型MOS場效應電晶體，以及一空乏型JFET接面場效應電晶體。
兩個增強型MOS場效應電晶體其中之一作為一電源供應器中的主要功率開關，另一做為電流取樣開關，這樣可以增加電源供應器的轉換效率。
JFET接面場效應電晶體可以作為該電源供應器中的高壓啟 動開關，除了提升轉換效率外，也可能可以降低整體電源供應器的製造成本。因為該電源供應器中的一脈衝寬度調變控制器所在的另一單晶片可能可以用一低壓製程來製作。
第2圖為依據本發明所實施的電源供應器200，具有返馳式(flyback)架構。第2圖僅僅作為一個例子，並不用來限制本發明。舉例來說，依據本發明所實施的一電源供應器可能是LLC電源轉換器、或是昇壓轉換器(booster)。
電源供應器200將一次側的輸入電源VIN轉換為二次側的輸出電源VOUT。電源供應器200包含有脈衝寬度調變控制器202、高壓半導體裝置204、變壓器TF、電流偵測電阻RCS、整流二極體D1、電源電容CVCC、COUT。
在一實施例中，脈衝寬度調變控制器202與高壓半導體裝置204之主要電路分別形成於兩個單晶片上。封裝後，脈衝寬度調變控制器202具有，但不限於，電源接腳VCC、啟動接腳STR、啟動控制接腳STRC、閘輸出接腳GATE、電流偵測接腳CS、以及接地接腳GND。高壓半導體裝置204具有，但不限於，高壓接腳HV、控制閘接腳CG、主源接腳GS、取樣接腳SS、充電接腳JS、以及充電控制接腳JG。在另一個實施例中，脈衝寬度調變控制器202與高壓半導體裝置204之主要電路分別形成於兩個單晶片，而這兩個單晶片封裝為具有多個接腳的單一積體電路。
高壓半導體裝置204包含有三個高壓電晶體：增強型MOS場效應電晶體NC與NM、JFET接面場效應電晶體JHV。增強型MOS場效應電晶體NC與NM、以及JFET接面場效應電晶體JHV，三者的汲端D，都透過高 壓接腳HV，電連接到變壓器TF中的一次側繞組LP，其另一端電連接到輸入電源VIN。增強型MOS場效應電晶體NC與NM的閘端G，都透過控制閘接腳CG，電連接到脈衝寬度調變控制器202的閘輸出接腳GATE。增強型MOS場效應電晶體NM的源端S，透過主源接腳GS，電連接到接地線。增強型MOS場效應電晶體NC的源端S，透過取樣接腳SS，電連接到脈衝寬度調變控制器202的電流偵測接腳CS與電流偵測電阻RCS，電流偵測電阻RCS的另一端電連接到接地線。FET接面場效應電晶體JHV的控制端G，透過充電控制接腳JG，電連接到脈衝寬度調變控制器202的啟動控制接腳STRC。FET接面場效應電晶體JHV的源端S，透過充電接腳JS，電連接到脈衝寬度調變控制器202的啟動接腳STR。
開關增強型MOS場效應電晶體NM作為主要功率開關，開關增強型MOS場效應電晶體NC做為電流取樣開關。脈衝寬度調變控制器202透過閘輸出接腳GATE，提供PWM信號，開關增強型MOS場效應電晶體NC與NM，來控制變壓器TF的儲能與釋能。當變壓器TF釋能時，透過整流二極體D1，可以在二次側建立輸出電源VOUT。脈衝寬度調變控制器202可以透過電流偵測接腳CS，偵測流經增強型MOS場效應電晶體NC與NM的電流。
JFET接面場效應電晶體JHV作為電源供應器200中的高壓啟動開關。脈衝寬度調變控制器202包含有啟動裝置206，其可以透過啟動控制接腳STRC，來開關FET接面場效應電晶體JHV。當FET接面場效應電晶體JHV開啟時，部分流經電感LP的電流，可以透過啟動接腳STR與電源接腳VCC，對電源電容CVCC充電，來建立操作電源VCC。舉例來說，當輸入電源VIN剛剛連接到一市電時，FET接面場效應電晶體JHV為開啟狀態，進行 高壓啟動，透過電源接腳VCC，對電源電容CVCC充電，來建立操作電源VCC。當操作電源VCC到達一預設電壓時，譬如10V，脈衝寬度調變控制器202可以透過啟動控制接腳STRC，來關閉FET接面場效應電晶體JHV。
第3圖顯示高壓半導體裝置204的一剖面示意圖。高壓半導體裝置204中的三個電晶體整合於單晶片300上。單晶片300的正面TS大致上可以由場氧化層309區隔為主動區402、404與406，分別用來形成MOS場效應電晶體NM、MOS場效應電晶體NC、以及FET接面場效應電晶體JHV。單晶片300上形成有N型基底302、P型體摻雜區3042、3044、3046、N型重摻雜區3062、3064、3066。多晶矽閘(polysilicon gate)3082絕緣地形成於P型體摻雜區3042與N型重摻雜區3062上，而多晶矽閘3084絕緣地形成於P型體摻雜區3044與N型重摻雜區3064上。
增強型MOS場效應電晶體NM可以是一垂直式雙擴散金氧半場效電晶體(Vertical Double-diffused MOS，VDMOS)。MOS場效應電晶體NM的源端、體端、汲端、以及閘端分別是N型重摻雜區3062、P型體摻雜區3042、N型基底302、以及多晶矽閘3082。N型重摻雜區3062與P型體摻雜區3042透過金屬層3102短路在一起，電性連接到主源接腳GS。類似地，增強型MOS場效應電晶體NC也可以是一VDMOS。MOS場效應電晶體NC的源端、體端、汲端、以及閘端分別是N型重摻雜區3064、P型體摻雜區3044、N型基底302以及多晶矽閘3084。N型重摻雜區3064與P型體摻雜區3044透過金屬層3104短路在一起，電性連接到取樣接腳SS。多晶矽閘3082與3084電性相短路，電連接到控制閘接腳CG。
MOS場效應電晶體NM與NC是垂直式元件，因為連接源端 與汲端兩者之直線延展的方向，大約垂直於單晶片300的表面。
單晶片300的背面BS上形成有背面金屬層312，作為N型基底302的電性接觸，可以電連接到高壓接腳HV。
當控制閘接腳CG的電壓足夠高時，多晶矽閘3082下方的P型體摻雜區3042與3046的表面形成導電通道，可以分別電連接N型基底302與N型重摻雜區3062，以及N型基底302與N型重摻雜區3064。導電通道平行於單晶片300的表面。電流路徑Pth1與Pth2分別顯示當增強型MOS場效應電晶體NM與NC開啟時的主要電流路徑。
FET接面場效應電晶體JHV的源端、控制端、以及汲端分別是N型重摻雜區3066、P型體摻雜區3046、以及N型基底302。P型體摻雜區3046透過金屬層3106，電連接至充電控制接腳JG。N型重摻雜區3066透過金屬層3107，電連接至充電接腳JS。
FET接面場效應電晶體JHV的源端與控制端之間的跨壓，可以控制兩個P型體摻雜區3046中的導電通道，其垂直於單晶片300的表面。FET接面場效應電晶體JHV為一垂直式元件，因為連接源端與汲端兩者之直線延展的方向，大約垂直於單晶片300的表面。兩個P型體摻雜區3046之間的距離可以決定FET接面場效應電晶體JHV的臨界電壓。在一實施例中，FET接面場效應電晶體JHV為一空乏型元件，在另一實施例中，為一增強型元件。
如同第3圖的高壓半導體裝置204所顯示，單晶片300具有正面TS以及背面BS，增強型MOS場效應電晶體NC與NM、JFET接面場效應電晶體JHV的汲端都透過背面BS的背面金屬層312電連接至主繞組LP，增強型MOS場效應電晶體NM之源端透過正面TS電連接至接地線。
第4A圖顯示高壓半導體裝置204的上視圖，其中顯示了場氧化圖案P-FOX以及閘端圖案P-G。第4A圖中，場氧化圖案P-FOX定義出了主動區402、404與406，分別用來形成增強型MOS場效應電晶體NM與NC、JFET接面場效應電晶體JHV。閘端圖案P-G具有許多長條物，橫跨於主動區402與404上，作為多晶矽閘3082與3084。
第4B圖顯示高壓半導體204的另一上視圖，其中顯示了開關控制墊CGP、主源墊GSP、偵測源墊SSP、啟動控制墊JGP、啟動源墊JSP，每個在一實施例中，可以在上形成一焊線(bonding wire)，用以連接至一接腳。多晶矽閘3082與3084電性連接到過開關控制墊CGP。N型重摻雜區3062與P型體摻雜區3042透過金屬層3102，電性連接到主源墊GSP。N型重摻雜區3064與P型體摻雜區3044透過金屬層3104，電性連接到取樣接腳SSP。P型體摻雜區3046透過金屬層3106，電連接至啟動控制墊JGP。N型重摻雜區3066透過金屬層3107，電連接至啟動源墊JSP。第4B圖也顯示了包圍了主動區402、404與406的終端環狀區(termination ring)TR，用以保護高壓半導體204在經歷晶片切割(singulation)時，避免受到損害。
在另一實施例中，第4A圖中的場氧化圖案P-FOX上可以另形成以多晶矽構成的電阻，電連接於JFET接面場效應電晶體JHV的金屬層3107與啟動源墊JSP之間，可以作為電連接於JFET接面場效應電晶體JHV的限流電阻。
第2圖之電源供應器200，相較於第1圖之電源供應器100，有以下的優點。
較佳的電源轉換效率。電源供應器200中，流經一次側繞組 LP的電流，只有部分流經電流偵測電阻RCS。因此，電流偵測電阻RCS消耗比較少的電能，使得電源供應器200有較佳的電源轉換效率。
較便宜的晶片製作成本。第1圖中的脈衝寬度調變控制器102，如果是一單晶片，必須採用可以耐受數百伏特高壓的超高壓製程。相較之下，第2圖之電源供應器200可以採用耐受數十伏特的高壓製程就可以，晶片製作成本可以大幅降低。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
204:高壓半導體裝置
300:單晶片
302:N型基底
3042、3044、3046:P型體摻雜區
3062、3064、3066:N型重摻雜區
3082、3084:多晶矽閘
309:場氧化層
3102、3104、3106、3107:金屬層
312:背面金屬層
402、404、406:主動區
BS:背面
CG:控制閘接腳
GS:主源接腳
HV:高壓接腳
JG:充電控制接腳
JS:充電接腳
Pth1、Pth2:電流路徑
SS:取樣接腳
TS:正面

Claims (8)

  1. 一種半導體裝置，包含有：
    一第一電晶體、一第二電晶體、一第三電晶體、一高壓接腳、一控制閘接腳、一主源接腳、一取樣接腳、一充電接腳、以及一充電控制接腳；
    其中，該第一電晶體與該第二電晶體為一垂直式元件，各具有一源端、一閘端、以及一汲端，該第一電晶體之該源端電連接至該主源接腳，該第二電晶體之該源端電連接至該取樣接腳，該第一電晶體與該第二電晶體之該等閘端電連接至該控制閘接腳；
    該第三電晶體為一垂直式JFET接面場效應電晶體，具有一源端、一控制端、以及一汲端，該第三電晶體之該源端電連接至該充電接腳，該第三電晶體之該控制端電連接至該充電控制接腳；以及
    該第一電晶體、該第二電晶體、以及該第三電晶體之該等汲端彼此電連接至該高壓接腳。
  2. 如申請專利範圍第1項之該半導體裝置，其中，該第一電晶體與該第二電晶體為增強型MOS場效應電晶體，且該第三電晶體為空乏型JFET接面場效應電晶體。
  3. 如申請專利範圍第1項之該半導體裝置，其中，該第一電晶體、該第二電晶體、以及該第三電晶體係整合於一單晶片上。
  4. 如申請專利範圍第3項之該半導體裝置，其中，該單晶片具有一正面以及一背面，該開關控制墊、該主源墊、該偵測源墊、該啟動控制墊、以及該啟動源墊形成於該正面上，而該半導體裝置另包含有一背面金 屬層，形成於該背面，作為該第一電晶體、該第二電晶體、以及該第三電晶體之該等汲端。
  5. 一種電源供應器，包含有：
    一高壓半導體裝置，包含有：
    一第一電晶體、一第二電晶體、以及一第三電晶體，其中，該第一電晶體與該第二電晶體為一垂直式元件，各具有一源端、一閘端、以及一汲端，該第三電晶體為一垂直式JFET接面場效應電晶體，具有一源端、一控制端、以及一汲端，該第一電晶體之該源端電連接至一接地線；
    一脈衝寬度調變(PWM)控制器，包含有一啟動接腳、一啟動控制接腳、一閘輸出接腳、以及一電流偵測接腳，其中該啟動接腳電連接至該第三電晶體之該源端，該啟動控制接腳電連接至該第三電晶體之該控制端，該閘輸出接腳電連接至該第一電晶體與該第二電晶體之該等閘端，該電流偵測接腳電連接至該第二電晶體之該源端；
    一電感，電連接至該第一、第二、第三電晶體之該等汲端；以及
    一電流偵測電阻，電連接於該第二電晶體之該源端與該接地線之間。
  6. 如申請專利範圍第5項之該電源供應器，其中，該第一電晶體與該第二電晶體為增強型MOS場效應電晶體，且該第三電晶體為空乏型JFET接面場效應電晶體。
  7. 如申請專利範圍第5項之該電源供應器，其中，該高壓半導體裝置形成於一第一單晶片上，該脈衝寬度調變控制器形成於一第二單晶片上。
  8. 如申請專利範圍第7項之該電源供應器，其中，該第一單晶片具有一正 面以及一背面，該第一、第二、以及第三電晶體之該等汲端係透過該背面電連接至該電感，該第一電晶體之該源端係透過該正面電連接至該接地線。
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