TWI655974B - Substrate processing method, liquid feeding method, and substrate processing apparatus - Google Patents

Substrate processing method, liquid feeding method, and substrate processing apparatus Download PDF

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Publication number
TWI655974B
TWI655974B TW106139504A TW106139504A TWI655974B TW I655974 B TWI655974 B TW I655974B TW 106139504 A TW106139504 A TW 106139504A TW 106139504 A TW106139504 A TW 106139504A TW I655974 B TWI655974 B TW I655974B
Authority
TW
Taiwan
Prior art keywords
cleaning liquid
purity cleaning
low
substrate
flow path
Prior art date
Application number
TW106139504A
Other languages
English (en)
Chinese (zh)
Other versions
TW201825199A (zh
Inventor
辻川裕貴
三浦淳靖
藤田和宏
土橋裕也
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201825199A publication Critical patent/TW201825199A/zh
Application granted granted Critical
Publication of TWI655974B publication Critical patent/TWI655974B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW106139504A 2016-12-19 2017-11-15 Substrate processing method, liquid feeding method, and substrate processing apparatus TWI655974B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-245785 2016-12-19
JP2016245785A JP6759087B2 (ja) 2016-12-19 2016-12-19 基板処理方法、送液方法、および、基板処理装置

Publications (2)

Publication Number Publication Date
TW201825199A TW201825199A (zh) 2018-07-16
TWI655974B true TWI655974B (zh) 2019-04-11

Family

ID=62627025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106139504A TWI655974B (zh) 2016-12-19 2017-11-15 Substrate processing method, liquid feeding method, and substrate processing apparatus

Country Status (5)

Country Link
JP (1) JP6759087B2 (ja)
KR (1) KR102215990B1 (ja)
CN (1) CN110073472B (ja)
TW (1) TWI655974B (ja)
WO (1) WO2018116671A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102548824B1 (ko) * 2020-04-07 2023-06-27 세메스 주식회사 기판 처리 방법 및 기판 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101858A (zh) * 2006-07-06 2008-01-09 大日本网目版制造株式会社 基板处理方法以及基板处理装置
JP2012109290A (ja) * 2010-11-15 2012-06-07 Kurita Water Ind Ltd シリコンウェハ清浄化方法及びシリコンウェハ清浄化装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358109A (ja) 2000-06-14 2001-12-26 Semiconductor Leading Edge Technologies Inc 枚葉式洗浄装置、及びウェハ洗浄方法。
JP2008277576A (ja) * 2007-04-27 2008-11-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5114252B2 (ja) * 2008-03-06 2013-01-09 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5424597B2 (ja) * 2008-09-08 2014-02-26 大日本スクリーン製造株式会社 基板処理装置
JP5634953B2 (ja) * 2011-07-01 2014-12-03 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置および記憶媒体
JP2013074114A (ja) * 2011-09-28 2013-04-22 Renesas Electronics Corp 半導体装置の製造方法および半導体装置の製造装置
JP5954195B2 (ja) * 2013-01-24 2016-07-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6502037B2 (ja) * 2014-08-15 2019-04-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101858A (zh) * 2006-07-06 2008-01-09 大日本网目版制造株式会社 基板处理方法以及基板处理装置
JP2012109290A (ja) * 2010-11-15 2012-06-07 Kurita Water Ind Ltd シリコンウェハ清浄化方法及びシリコンウェハ清浄化装置

Also Published As

Publication number Publication date
TW201825199A (zh) 2018-07-16
CN110073472B (zh) 2023-02-28
KR20190086003A (ko) 2019-07-19
KR102215990B1 (ko) 2021-02-16
CN110073472A (zh) 2019-07-30
JP2018101670A (ja) 2018-06-28
WO2018116671A1 (ja) 2018-06-28
JP6759087B2 (ja) 2020-09-23

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