TWI639668B - 接著組成物及具有其的接著膜、帶有接著組成物的基板、半導體裝置及其製造方法 - Google Patents

接著組成物及具有其的接著膜、帶有接著組成物的基板、半導體裝置及其製造方法 Download PDF

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TWI639668B
TWI639668B TW104101197A TW104101197A TWI639668B TW I639668 B TWI639668 B TW I639668B TW 104101197 A TW104101197 A TW 104101197A TW 104101197 A TW104101197 A TW 104101197A TW I639668 B TWI639668 B TW I639668B
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adhesive composition
film
group
polyimide
manufactured
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TW104101197A
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TW201533198A (zh
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小田拓郎
金森大典
野中敏央
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日商東麗股份有限公司
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    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
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    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L25/0657—Stacked arrangements of devices
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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Abstract

本發明提供一種在形成有裂紋的狀態下的強度優異的接著組成物，所述接著組成物的特徵在於：含有(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑及(D)無機粒子，並且非揮發性有機成分中的所述(A)聚醯亞胺的比例為3.0重量%以上、30重量%以下，非揮發性有機成分中的所述(C)環氧硬化劑的比例為0.5重量%以上、10重量%以下，且將非揮發性有機成分的總克數設為T，將非揮發性有機成分中的環氧基的莫耳數設為M，則T/M為400以上、8000以下。

Description

接著組成物及具有其的接著膜、帶有接著組成物的 基板、半導體裝置及其製造方法
本發明是有關於一種能夠用於個人電腦、行動終端機中使用的電子零件、散熱板與印刷基板、可撓性基板的接著以及基板彼此等的接著的接著組成物或能夠用於晶圓保護的接著組成物。更詳細而言，本發明是有關於一種於將積體電路(integrated circuit，IC)、大型積體電路(large scale integration，LSI)等半導體晶片接著或直接電性接合於可撓性基板、玻璃環氧基板、玻璃基板、陶瓷基板、矽中介層(silicon interposer)等電路基板上時，或者半導體晶片彼此的接合或三維安裝等半導體晶片的積層時使用的接著組成物。另外，還有關於具有本發明的接著組成物的接著膜、帶有接著組成物的基板、半導體裝置及其製造方法。
隨著近年來的電子終端機設備的急遽普及，電子設備小型．薄型化、高性能化。隨之，其中所搭載的半導體裝置小型化、高密度化，作為將半導體晶片安裝於電路基板上的方法，倒裝晶 片安裝急速擴展。
為了提高半導體裝置的可靠性，於晶片與基板之間填充底部填充材料。填充底部填充材料的方法通常為利用毛細管現象來填充於晶片與基板之間的方法，但存在容易產生未填充，製造成本升高的課題。作為解決該些課題的方法，考慮到將底部填充材料形成於晶圓上而接合(bonding)經單片化的晶片的方法。形成於晶圓上的方法有以下方法：藉由真空熱層壓(vacuum thermal lamination)處理等而將塗佈為膜狀的樹脂組成物形成於晶圓上的方法，或將樹脂塗佈劑直接塗佈而形成於晶圓上的方法等。
對如上所述於晶圓上形成樹脂層的塗佈劑要求室溫下的保存穩定性、短時間的硬化特性，且對硬化物要求強度高。該些材料通常使用環氧組成物，環氧組成物雖具有接著性優異的優點，但存在強度低的課題。因此，作為對所述情況加以改善的方法，報告有調配有聚醯亞胺的樹脂組成物(例如專利文獻1、專利文獻2)。
[現有技術文獻]
[專利文獻]
專利文獻1：日本專利特開2009-277818號公報
專利文獻2：日本專利特開2007-211246號公報
然而，專利文獻1或專利文獻2的樹脂組成物於形成有 裂紋的狀態下的強度存在課題。鑒於所述狀況，本發明的目的在於提供一種於形成有裂紋的狀態下的強度優異的接著組成物。
即，本發明為一種接著組成物，其特徵在於：含有(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑及(D)無機粒子，並且非揮發性有機成分中的所述(A)聚醯亞胺的比例為3.0重量%以上、30重量%以下，非揮發性有機成分中的所述(C)環氧硬化劑的比例為0.5重量%以上、10重量%以下，且將非揮發性有機成分的總克數設為T，將非揮發性有機成分中的環氧基的莫耳數設為M，則T/M為400以上、8000以下。
而且，本發明提供一種接著膜，其特徵在於具有：包含上述的接著組成物的層以及支持膜。
而且，本發明提供一種帶有接著組成物的基板，其特徵在於具有：包含上述的接著組成物的層以及基板。
而且，本發明提供一種半導體裝置，其具有包含上述的接著組成物的層。
而且，本發明提供一種半導體裝置的製造方法，其藉由使上述的接著組成物嵌入至第一電路構件與第二電路構件之間，進行加熱加壓而使所述第一電路構件與所述第二電路構件電性連接。
依據本發明，獲得於形成有裂紋的狀態下的強度優異的接著組成物。
本發明的接著組成物的特徵在於：含有(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑及(D)無機粒子，並且非揮發性有機成分中的所述(A)聚醯亞胺的比例為3.0重量%以上、30重量%以下，非揮發性有機成分中的所述(C)環氧硬化劑的比例為0.5重量%以上、10重量%以下，且將非揮發性有機成分的總克數設為T，將非揮發性有機成分中的環氧基的莫耳數設為M，則T/M為400以上、8000以下。此處所謂的非揮發性有機成分，是指當於200℃下進行1小時熱重量測定時，重量不會減少5%以上的有機化學物質。
本發明的接著組成物含有(A)聚醯亞胺，(A)聚醯亞胺由於具有醯亞胺環，故而耐熱性及耐化學品性優異。特別是藉由使用在聚醯亞胺的側鏈上具有至少一個可與環氧基進行反應的官能基的化合物，則於熱處理時促進(B)多官能環氧化合物的開環、對(A)聚醯亞胺的加成反應，能夠獲得密度更高的具有網狀結構的組成物。可與環氧基進行反應的官能基可列舉酚性羥基、磺酸基、硫醇基。此種(A)聚醯亞胺的合成方法並不限定於以下的例子，例如可列舉如下方法：首先，使具有可與環氧基進行反應的基團的酸二酐與二胺進行反應而合成聚醯亞胺前驅物，繼而，使用一級單胺作為封端劑，進行該聚醯亞胺前驅物的末端修飾，然後進行150℃以上的熱處理，來進行聚醯亞胺閉環。除此以外還可列舉如下方法：首先使酸二酐與作為封端劑的一級單胺進行反應後，添加二胺來合成經末端修飾的聚醯亞胺前驅物，進而於150℃以上的高溫下進行聚醯亞胺閉環。
本發明中使用的(A)聚醯亞胺的較佳一例具有通式(2)或通式(3)所表示的結構，且相對於聚合物總量而具有5重量% ~15重量%的通式(1)所表示的結構來作為通式(2)或通式(3)中的R4。藉由設為5重量%以上，能夠對剛直的聚醯亞胺賦予更適度的柔軟性，藉由設為15重量%以下，能夠維持聚醯亞胺骨架的剛直性，且進一步確保耐熱性、絕緣性。
此外，此處所謂藉由聚醯亞胺的合成而獲得的聚合物(聚醯亞胺)的總量，是指藉由包含二胺與酸二酐以及封端劑的構成成分的聚合而獲得的重量，合成時過剩加入的二胺、酸二酐及封端劑並不包含於聚醯亞胺的重量中。
式中，R1為2價烴基。R1較佳為碳數1~5的伸烷基、或者伸苯基。R2為1價烴基。R2較佳為碳數1~5的烷基、或者苯基。可於聚醯亞胺的1分子內包含不同結構的R1及R2，亦可於不同的聚醯亞胺分子間包含不同結構的R1及R2。
n表示1~10的整數，較佳為1~2。藉由將n設為1以上，能夠抑制硬化時的接著組成物的收縮，藉由設為10以下，不會減少聚醯亞胺骨架中的醯亞胺基含有率，能夠提高接著組成物的絕緣性、耐熱性。
式中，R3為4價~14價有機基，R4為2價~12價有機基，R3、R4的至少一者含有至少一個選自由1,1,1,3,3,3-六氟丙基、異丙基、醚基、硫醚基及SO2基所組成的組群中的基團(以下，將其稱為「特定基」)。另外，R3、R4較佳為含有芳香族基。R5及R6表示具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的有機基。可於聚醯亞胺的1分子內包含不同結構的R3~R6，亦可於不同的聚醯亞胺分子間包含不同結構的R3~R6。X表示1價有機基。m為8~200。α及β分別表示0~10的整數，α+β為0~10的整數。其中，重複數m中，20%~90%為α+β=1~10。
此外，就塗佈性的觀點而言，本發明中使用的(A)聚醯亞胺較佳為溶解於有機溶劑中的有機溶劑可溶性聚醯亞胺。所 謂溶解於有機溶劑中的有機溶劑可溶性聚醯亞胺的可溶性，是指於選自以下中的至少1種溶劑中在23℃下溶解20重量%以上。酮系溶劑的丙酮、甲基乙基酮、甲基異丁基酮、環戊酮、環己酮；醚系溶劑的1,4-二噁烷、四氫呋喃、二甘二甲醚(diglyme)；二醇醚系溶劑的甲基溶纖劑、乙基溶纖劑、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丁醚、二乙二醇甲基乙基醚；除此以外，苄基醇、N-甲基吡咯啶酮、γ-丁內酯、乙酸乙酯、N,N-二甲基甲醯胺。
通式(2)、通式(3)中，R3表示酸二酐的結構成分，其中較佳為碳數5~40的4價~14價有機基。另外，R4表示二胺的結構成分，其中較佳為碳數5~40的2價~12價有機基。另外，較佳為R3、R4的兩者含有至少一個特定基。
R5為酸二酐的取代基，較佳為選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團。R6為二胺的取代基，較佳為選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團。
對所使用的酸二酐進行說明。具體而言，具有至少一個特定基的酸二酐可列舉：2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、雙(3,4-二羧基苯基)碸二酐、雙(3,4-二羧基苯基)醚二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐或者於該些芳香族環上以烷基或鹵素原子進行取代的化合物等。
具體而言，具有至少一個特定基且具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的酸二酐可列舉下述所示的結構的芳香族酸二酐。
R9表示C(CF3)2、C(CH3)2、SO2、S或O。R10及R11表示氫原子、羥基、硫醇基或磺酸基。其中，R10及R11不會同時為氫原子。
具體而言，不具有特定基且具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的酸二酐可列舉下述所示的結構的芳香族酸二酐。
R7、R8表示氫原子、羥基、硫醇基或磺酸基。其中，R7及R8不會同時為氫原子。
具體而言，不具有特定基且亦不具有酚性羥基、磺酸基、硫醇基的酸二酐可列舉：均苯四甲酸二酐、3,3',4,4'-聯苯基四羧酸二酐、2,3,3',4'-聯苯基四羧酸二酐、2,2',3,3'-聯苯基四羧酸二 酐、3,3',4,4'-二苯甲酮四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)甲烷二酐、1,2,5,6-萘四羧酸二酐、2,3,6,7-萘四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、3,4,9,10-苝四羧酸二酐等芳香族四羧酸二酐或者於該些芳香族環上以烷基或鹵素原子進行取代的化合物。
本發明中將該些酸二酐單獨使用或者將2種以上組合來使用。
對所使用的二胺進行說明。具體而言，具有至少一個特定基的二胺可列舉：3,4'-二胺基二苯基硫醚、4,4'-二胺基二苯基硫醚、3,4'-二胺基二苯基醚、4,4'-二胺基二苯基醚、3,4'-二胺基二苯基碸、4,4'-二胺基二苯基碸、雙(4-胺基苯氧基苯基)碸、雙(3-胺基苯氧基苯基)碸、雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]醚、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、或者於該些芳香族環上以烷基或鹵素原子進行取代的化合物等。
具體而言，具有至少一個特定基且具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的二胺可列舉：2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、3,3'-二胺基-4,4'-二羥基二苯基醚、3,3'-二胺基-4,4'-二羥基二苯基碸、3,3'-二胺基-4,4'-二羥基二苯基硫醚或者於 該些芳香族環上以烷基或鹵素原子進行取代的化合物等，或下述所示的結構的二胺等。
R16表示C(CF3)2、C(CH3)2、SO2、S或O。R17~R18表示氫原子、羥基、硫醇基或磺酸基。其中，R17及R18不會同時為氫原子。
具體而言，不具有特定基且具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的二胺可列舉：3,3'-二胺基-4,4'-二羥基聯苯、2,4-二胺基苯酚、2,5-二胺基苯酚、1,4-二胺基-2,5-二羥基苯、二胺基二羥基嘧啶、二胺基二羥基吡啶、羥基二胺基嘧啶、9,9-雙(3-胺基-4-羥基苯基)茀、或者於該些芳香族環上以烷基或鹵素原子進行取代的化合物等，或下述所示的結構的二胺等。
[化6]
R12~R15表示氫原子、羥基、硫醇基或磺酸基。其中，R12及R13不會同時為氫原子。
具體而言，不具有特定基且亦不具有酚性羥基、磺酸基、硫醇基的二胺可列舉：3,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基甲烷、聯苯胺、間苯二胺、對苯二胺、1,5-萘二胺、2,6-萘二胺、2,2'-二甲基-4,4'-二胺基聯苯、2,2'-二乙基-4,4'-二胺基聯苯、3,3'-二甲基-4,4'-二胺基聯苯、3,3'-二乙基-4,4'-二胺基聯苯、2,2',3,3'-四甲基-4,4'-二胺基聯苯、3,3',4,4'-四甲基-4,4'-二胺基聯苯、2,2'-二(三氟甲基)-4,4'-二胺基聯苯、或者於該些芳香族環上以烷基或鹵素原子進行取代的化合物，對苯二甲酸醯肼、間苯二甲酸醯肼、鄰苯二甲酸醯肼、2,6-萘二羧酸二醯肼、4,4'-雙苯基二羰醯肼(4,4'-bisphenyl dicarbonohydrazide)、4,4'-環己烷二羰肼、或者於該些芳香族環上以烷基或鹵素原子進行取代的醯肼化合物等。本發明中使用的二胺是單獨使用或者將2種以上組合來使用。
另外，通式(1)所表示的結構由於是作為通式(2)、 通式(3)中的R4而包含，故而成為二胺的構成成分。包含通式(1)所表示的結構的二胺可列舉：雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基-苯基)八甲基五矽氧烷等。
藉由選擇通式(2)、通式(3)中的R5、R6，可調整熱處理時的聚醯亞胺與環氧化合物的反應率，來調整接著組成物的交聯密度。藉此，可對接著組成物賦予所需要的耐熱性、耐化學品性。α、β分別表示0~10的整數，α+β表示0~10的整數。其中，重複數m中，20%~90%表示α+β=1~10。另外，較佳為R5及R6的合計的20%~90%為酚性羥基、磺酸基或硫醇基。藉由將該些基團設為R5及R6的合計的20%以上，可提高耐化學品性、耐熱性，藉由設為90%以下，可將交聯密度抑制在適度的範圍內，保持膜的伸長率、韌性。
通式(2)、通式(3)的結構成分即X為源自作為封端劑的一級單胺的成分。該些成分可為單獨，或者與其他封端基的2種以上的組合的任一種。所謂一級單胺，具體而言可列舉：5-胺基喹啉、4-胺基喹啉、3-胺基萘、2-胺基萘、1-胺基萘、苯胺等。該些單胺中，較佳為使用苯胺。
另外，較佳為使用並不另外具有與環氧化合物進行反應的取代基的一級單胺。藉此，可獲得於分子運動性高的聚醯亞胺的末端部不具有與環氧化合物進行反應的取代基的聚醯亞胺。藉由使用該聚醯亞胺，聚醯亞胺與環氧化合物的於室溫下的反應變得難以進行，可進一步提高接著組成物的保存性。
通式(2)、通式(3)的X成分的導入比例若以作為其基礎成分的封端劑的一級單胺成分進行換算，則相對於全部二胺成分，較佳為0.1莫耳%~60莫耳%的範圍，特佳為5莫耳%~50莫耳%。
通式(2)、通式(3)的m表示聚合物的重複數，表示8~200的範圍。較佳為10~150。若以重量平均分子量計，則藉由利用凝膠過濾層析法的聚苯乙烯換算，較佳為4000~80000，特佳為8000~60000。藉由將m設為8以上，則增大黏度，可進行厚膜塗佈，藉由將m設為200以下，可提高於溶劑中的溶解性。此處，(A)聚醯亞胺的重量平均分子量可利用如下方法來求出。使用將聚醯亞胺溶解於N-甲基吡咯啶酮(N-methyl-2-pyrrolidone，NMP)中而成的固體成分濃度為0.1重量%的聚醯亞胺溶液，利用凝膠滲透層析(Gel Permeation Chromatography，GPC)裝置沃特斯(Waters)2690(沃特斯(Waters)(股)製造)來算出聚苯乙烯換算的重量平均分子量。GPC測定條件是將移動層設為將LiCl及磷酸分別以濃度0.05mol/L進行溶解而得的NMP，且將展開速度設為0.4ml/分鐘。
所使用的GPC裝置例如可列舉：檢測器：沃特斯(Waters)996
系統控制器：沃特斯(Waters)2690
管柱烘箱：沃特斯(Waters)HTR-B
熱控制器：沃特斯(Waters)TCM
管柱：東曹(TOSOH)(TSK-GEL保護管柱(Guard Column))
管柱：東曹(TOSOH)TSK-GEL α-4000
管柱：東曹(TOSOH)TSK-GEL α-2500等。
本發明中使用的(A)聚醯亞胺可僅為包含通式(2)、通式(3)所表示的結構者，亦可為於通式(2)、通式(3)所表示的結構中還具有其他結構作為共聚合成分的共聚物，另外亦可為它們的混合物。進而，亦可於該些的任一者中混合有其他結構所表示的聚醯亞胺。此時，較佳為含有50莫耳%以上的通式(2)、通式(3)所表示的結構。共聚合或者混合中使用的結構的種類及量較佳為於不損及藉由加熱處理而獲得的耐熱性樹脂皮膜的耐熱性的範圍內進行選擇。
另外，導入至聚合物中的通式(1)的結構以及本發明中使用的封端劑利用以下方法可容易地檢測、定量。例如，藉由將導入有通式(1)的結構以及封端劑的聚合物溶解於酸性溶液或者鹼性溶液中，分解為作為聚合物的構成單元的二胺成分與酸酐成分，對其進行氣相層析法(Gas Chromatography，GC)或核磁共振(Nuclear Magnetic Resonance，NMR)測定，能夠對通式(1)的結構以及所使用的封端劑容易地進行檢測、定量。除此以外，藉由對導入有封端劑的聚醯亞胺直接進行熱解氣相層析法(Pyrolysis-Gas Chromatography，PGC)或紅外光譜及13C NMR光譜測定，亦可對通式(1)的結構以及所使用的封端劑容易地進行檢測、定量。
關於(A)聚醯亞胺的含量，就對帶有凸塊(bump)的基板的塗佈性、於凸塊間的填充性的觀點而言，(A)聚醯亞胺在非揮發性有機成分中所佔的比例為30重量%以下。(A)聚醯亞胺在非揮發性有機成分中所佔的比例高於30重量%的情況下，樹脂塗佈劑的黏度控制變得困難。此處所謂的樹脂塗佈劑，是指為了利用旋轉塗佈機等塗佈法，於晶圓或基板、支持膜等上形成皮膜，而利用有機溶劑來調整黏度的塗液。另外，就接著強度的觀點而言，(A)聚醯亞胺於非揮發性有機成分中所佔的比例為3.0重量%以上。另外，為了形成與環氧化合物進行反應且密度高的網狀結構，(A)聚醯亞胺於非揮發性有機成分中所佔的比例更佳為5.0重量%以上、30重量%以下。
本發明的接著組成物還含有(B)多官能環氧化合物。此處所謂的多官能環氧化合物，是指於1分子中含有2個以上的縮水甘油基或環氧基環己基的化合物。於(A)聚醯亞胺在側鏈上具有酚性羥基、磺酸基、硫醇基的情況下，(B)多官能環氧化合物與該些基團進行反應，而構成密度更高的具有網狀結構的硬化物，因此所獲得的經硬化的接著組成物對各種化學品表現出更強的耐性。另外，環氧化合物通常藉由不伴隨收縮的開環反應而硬化，因此可減少接著組成物的硬化時的收縮。(B)多官能環氧化合物較佳為環氧當量為100以上的化合物。藉由將環氧當量設為100以上，可提高經硬化的接著組成物的強度。
(B)多官能環氧化合物只要是2官能以上，則並無特 別限定，例如可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、對苯二酚型環氧樹脂、含二苯基硫醚骨架的環氧樹脂、苯酚芳烷基型多官能環氧樹脂、含萘骨架的多官能環氧樹脂、含二環戊二烯骨架的多官能環氧樹脂、含三苯基甲烷骨架的多官能環氧樹脂、胺基苯酚型環氧樹脂、二胺基二苯基甲烷型環氧樹脂、此外的各種多官能環氧樹脂。
例如可列舉：jER828、jER152、jER1001、jER1002、jER1004AF、jER1007、jER1009、jER1010、jER1256、YX4000H、jER4004P、jER5050、jER154、jER157S70、jER180S70、YX4000H、YL980(以上為商品名，三菱化學(股)製造)；特皮克(Tepic)S、特皮克(Tepic)G、特皮克(Tepic)P(以上為商品名，日產化學工業(股)製造)；艾伯特(Epotohto)YH-434L(商品名，新日鐵化學(股)製造)；EPPN502H、NC3000、NC3000H(以上為商品名，日本化藥(股)製造)；愛匹克隆(Epiclon)N695、愛匹克隆(Epiclon)HP-7200、愛匹克隆(Epiclon)HP-4032(以上為商品名，迪愛生(DIC)(股)製造)等，但並不限定於該些商品。亦可將該些商品組合2種以上。
該些商品中，就低吸水率、高耐熱性、強韌性的觀點而言，較佳為使用雙酚A型環氧樹脂。藉由雙酚A與表氯醇的反應而獲得的雙酚A型環氧樹脂可列舉：具有1個雙酚A骨架的jER828、YL980，或具有多個雙酚A骨架的jER1010或jER1256 等(以上為商品名，三菱化學(股)製造)。
就塗佈時的製膜性的觀點而言，(B)多官能環氧化合物中，環氧當量(g/eq，以下有省略的情況)較佳為1000以上，更佳為2000以上。另外，就於丙二醇單甲醚乙酸酯等有機溶劑中的溶解性的觀點而言，環氧當量較佳為7000以下，更佳為5000以下，尤佳為4000以下。此種環氧當量為1000以上、7000以下的雙酚A型環氧樹脂可列舉：jER1007、jER1009、jER1010(以上為商品名，三菱化學(股)製造)等。另外，就製膜性的觀點而言，環氧當量為1000以上、7000以下的環氧樹脂在非揮發性有機成分中所佔的比例較佳為20重量%以上、70重量%以下，更佳為20重量%以上、60重量%以下。
另外，就接著組成物的流動性、以及於銅柱凸塊(copper pillar bump)或焊料凸塊(solder bump)等突起物間的填充性的觀點而言，較佳為調配液狀環氧化合物。所謂液狀環氧化合物，是於25℃、1氣壓下顯示出150Pa．s以下的黏度的環氧化合物。具體而言，可列舉：艾伯特(Epotohto)PG-207GS(新日鐵化學(股)製造)；YL980、jER828、jER806、jER807、YL983U(以上為商品名，三菱化學(股)製造)等。
另外，就接著組成物的流動性、以及於銅柱凸塊或焊料凸塊等突起物間的填充性的觀點而言，液狀環氧化合物於非揮發性有機成分中所佔的比例較佳為5重量%以上、60重量%以下，更佳為10重量%以上、50重量%以下。
本發明的接著組成物含有(C)環氧硬化劑。環氧硬化劑較佳為於包含有機溶劑的樹脂塗佈劑的狀態下黏度並不大幅度上升，就反應性或保存穩定性的觀點而言，較佳為咪唑系硬化劑。咪唑系硬化劑可列舉：咪唑、2-甲基咪唑、2-十一烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑；或2E4MZ、2PZ、C11Z、2P4MZ(以上為商品名，四國化成工業(股)製造)等。
就反應性的觀點而言，咪唑系硬化劑的硬化速度時間較佳為20天以下，更佳為5天以下，尤佳為2天以下。另外，就保存穩定性的觀點而言，咪唑系硬化劑的硬化速度時間較佳為0.2天以上，更佳為0.5天以上。具體而言，硬化速度時間為0.5天以上、2天以下的咪唑系硬化劑可列舉：2PZ、2PZ-OK(以上為商品名，四國化成工業(股)製造)等。此處所謂的硬化速度時間，是指當準備相對於雙酚A型液狀環氧樹脂100重量份而添加有5重量份的咪唑系硬化劑的試樣100mL，於25℃下以密閉狀態保管時，試樣的黏度成為初始黏度的2倍為止的天數。
非揮發性有機成分中的(C)環氧硬化劑的比例為0.5重量%以上、10重量%以下。藉由將環氧硬化劑的含量設為10重量%以下，可將包含接著組成物的樹脂塗佈劑於室溫下長期保存，可充分進行接著組成物的硬化。另外，若非揮發性有機成分中的(C)環氧硬化劑的比例超過10重量%，則雖進行接著組成物的硬化，但室溫下的可使用時間變短。另外，非揮發性有機成分中 的(C)環氧硬化劑的比例較佳為5重量%以下，更佳為3重量%以下。另外，非揮發性有機成分中的(C)環氧硬化劑的比例為0.5重量%以上，較佳為1.0重量%以上。藉由設為0.5重量%以上，可製作連接可靠性更優異的半導體裝置。
本發明的接著組成物含有(D)無機粒子。無機粒子可於將接著組成物進行加熱硬化時，將接著組成物的熔融黏度調整為不發泡的程度。(D)無機粒子的材質可將二氧化矽、氧化鋁、氧化鈦、氮化矽、氮化硼、氮化鋁、氧化鐵、玻璃或其他的金屬氧化物、金屬氮化物、金屬碳酸鹽、硫酸鋇等金屬硫酸鹽等單獨使用，或者將2種以上混合使用。該些材質中，就低熱膨脹性、熱散逸性、低吸濕率、於接著組成物中的分散穩定性的方面而言，可較佳地使用二氧化矽。
(D)無機粒子的形狀可為球狀、破碎狀、薄片狀等非球狀的任一種，球狀的無機粒子容易在接著組成物中均勻分散，因此可較佳地使用。另外，就於銅柱凸塊或焊料凸塊等突起物間的填充性的觀點而言，球狀的無機粒子的平均粒徑較佳為3μm以下，更佳為1.0μm以下，尤佳為700nm以下。另外，該平均粒徑較佳為10nm以上，於10nm以上時分散性更優異，可於接著組成物中高濃度地填充無機粒子。另外，就所製備的樹脂塗佈劑的塗佈性的觀點而言，該平均粒徑較佳為100nm以上，更佳為300nm以上。
另外，於接著組成物需要透明性的情況下，無機粒子的 粒徑較佳為100nm以下，更佳為60nm以下。例如為如下情況等：將接著組成物的膜形成於基板上後，出於對準等目的，必須通過接著組成物來視認位於基板面的標記。
另外，當調合樹脂塗佈劑時，(D)無機粒子可以分散於有機溶劑中的漿料狀態來添加，亦可添加無溶劑的粉體。另外，亦可添加漿料狀態的無機粒子與粉體的無機粒子這兩者。就無機粒子的分散性的觀點而言，較佳為使用漿料狀態的無機粒子。
此外，所謂無機粒子的平均粒徑，表示無機粒子單獨存在的情況下的粒徑，是指顯示出頻率最高的粒徑者。於形狀為球狀的情況下表示其直徑，於橢圓狀以及扁平狀的情況下表示形狀的最大長度。進而於桿狀或者纖維狀的情況下，表示長邊方向的最大長度。作為測定接著組成物中的無機粒子的平均粒徑的方法，可利用如下方法來測定：利用掃描式電子顯微鏡(Scanning Electron Microscope，SEM)來直接觀察粒子，計算出100個粒子的粒徑的平均值。
另外，就(D)無機粒子的分散性或該無機粒子與周圍的樹脂的接著性的觀點而言，該無機粒子較佳為進行表面處理。表面處理劑可使用一般的矽烷偶合劑，但就分散性或接著性的觀點而言，較佳為含有環氧基的矽烷偶合劑、或含有胺基的矽烷偶合劑。
相對於非揮發性成分的總量，(D)無機粒子的含量較佳為50重量%以上、80重量%以下，更佳為60重量%以上、75重 量%以下，尤佳為60重量%以上、70重量%以下。若(D)無機粒子的該含量為50重量%以上，則使用該接著組成物時可製作連接可靠性更優異的半導體裝置。另外，若(D)無機粒子的含量為80重量%以下，則無機粒子的分散性變得更良好。此處所謂的非揮發性成分，是指將非揮發性有機成分與非揮發性無機成分合併的成分。
本發明的接著組成物亦可於不損及本發明效果的範圍內，出於硬化後的膜的低應力化的目的而含有熱塑性樹脂。熱塑性樹脂例如可列舉：苯氧基樹脂、聚酯、聚胺基甲酸酯、聚醯胺、聚丙烯、丙烯腈-丁二烯共聚物(丙烯腈丁二烯橡膠(acrylonitrile butadiene rubber，NBR))、苯乙烯-丁二烯共聚物(苯乙烯丁二烯橡膠(styrene butadiene rubber，SBR))、丙烯腈-丁二烯-甲基丙烯酸共聚物、丙烯腈-丁二烯-丙烯酸共聚物等，但並不限定於該些樹脂。
本發明的接著組成物或包含該接著組成物的樹脂塗佈劑亦可於不損及本發明效果的範圍內，出於提高與基板的親和性的目的而包含界面活性劑。此種界面活性劑並無特別限定，例如可列舉氟系界面活性劑、矽酮系界面活性劑、非離子系界面活性劑等。其中較佳為與基板的親和性改善效果高的氟系界面活性劑。
氟系界面活性劑的具體例可列舉(以下為商品名)：美佳法(Megafac)F171、美佳法(Megafac)F173、美佳法(Megafac)R-30(迪愛生(DIC)(股)(前大日本油墨化學工業(股))製造)； 弗拉德(Fluorad)FC430、弗拉德(Fluorad)FC431(住友3M(股)製造)；阿薩佳(Asahi Guard)AG710、沙福隆(Surflon)S-382、沙福隆(Surflon)SC101、沙福隆(Surflon)SC102、沙福隆(Surflon)SC103、沙福隆(Surflon)SC104、沙福隆(Surflon)SC105、沙福隆(Surflon)SC106(旭硝子(股)製造)等，但並不限定於該些商品。另外，矽酮系界面活性劑的具體例可列舉(以下為商品名)：畢克(BYK)-378、畢克(BYK)-337、畢克(BYK)-306、畢克(BYK)-333、畢克(BYK)-375、畢克(BYK)-370、畢克(BYK)-377、畢克(BYK)-323、畢克(BYK)-325(日本畢克化學(BYK-Chemie Japan)(股)製造)等，但並不限定於該些商品。另外，界面活性劑亦可將多種組合來使用。
本發明的接著組成物以及包含該接著組成物的樹脂塗佈劑亦可於不損及本發明效果的範圍內，出於提高與基板的密合性的目的而包含密合促進劑。此時，亦可將多種密合促進劑組合來使用。
此種密合促進劑例如可列舉：三甲基氯矽烷、乙烯基三氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等氯矽烷類；γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-(N-哌啶基)丙基三甲氧基矽烷、三甲基甲氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等烷氧 基矽烷類；六甲基二矽氮烷、八甲基環四矽氮烷等矽氮烷類；(N,N-二甲基)三甲基矽烷基胺、三甲基矽烷基咪唑等矽烷類；苯并三唑、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、脲唑(urazole)、硫脲嘧啶(thiouracil)、巰基咪唑、巰基嘧啶等雜環狀化合物；N,N'-雙(三甲基矽烷基)脲、1,1-二甲基脲、1,3-二甲基脲等脲、或者硫脲化合物等。
本發明的接著組成物或包含該接著組成物的樹脂塗佈劑亦可包含助溶劑。助溶劑可使用具有羧酸基等的有機酸化合物等。
為了由本發明的接著組成物來製備樹脂塗佈劑，可藉由將(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑、(D)無機粒子進行混合並攪拌，將(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑溶解於有機溶劑中，使(D)無機粒子分散來製備。此處使用的有機溶劑只要是將(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑溶解者即可。
具體而言，有機溶劑可列舉：乙二醇單甲醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、乙二醇二甲醚、乙二醇二乙醚、乙二醇二丁醚、二乙二醇單乙醚等醚類；乙二醇單乙醚乙酸酯、丙二醇單甲醚乙酸酯、乙酸丙酯、乙酸丁酯、乙酸異丁酯、3-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯、乳酸甲酯、乳酸乙酯、乳酸丁酯等乙酸酯類；丙酮、甲基乙基酮、乙醯基丙酮、甲基丙基酮、甲基丁基酮、甲基異丁基酮、環戊酮、2-庚酮 等酮類；丁醇、異丁醇、戊醇、4-甲基-2-戊醇、3-甲基-2-丁醇、3-甲基-3-甲氧基丁醇、二丙酮醇等醇類；甲苯、二甲苯等芳香族烴類；除此以外還可列舉N-甲基-2-吡咯啶酮、N-環己基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、γ-丁內酯等。該些有機溶劑中，特佳為溶解(A)成分且大氣壓下沸點為100℃~180℃者。若沸點為該範圍，則於樹脂塗佈劑的塗佈時，不存在溶劑過度揮發而變得無法塗佈的情況，且亦可不提高樹脂塗佈劑的乾燥熱處理溫度，因此不會對基板或支持膜的材質產生制約。另外，藉由使用溶解(A)成分的溶劑，可於基板或支持膜上形成均勻性良好的塗膜。此處，本發明中所謂的沸點，是於1氣壓、即1.013×105N/m2的壓力下的沸點。沸點的測定可使用公知的技術來進行，並無特別限定，例如可藉由使用Swietoslawski的沸點計來測定。
具體而言，具有此種沸點的特佳有機溶劑可列舉：環戊酮、乙二醇單甲醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、乳酸甲酯、乳酸乙酯、二丙酮醇以及3-甲基-3-甲氧基丁醇等。
另外，亦可使用濾紙或過濾器，將以所述方式混合、溶解及分散而獲得的樹脂塗佈劑進行過濾。過濾方法並無特別限定，為了使分散的(D)無機粒子通過，較佳為使用保留粒徑為10μm以上的過濾器，藉由加壓過濾來過濾的方法。
本發明的非揮發性有機成分是指接著組成物或樹脂塗 佈劑中所含的成分中，當於200℃下進行1小時熱重量測定時，重量不會減少5%以上的有機化學物質。另外，本發明的接著組成物的特徵在於：將非揮發性有機成分的總克數設為T(單位為g)，且將非揮發性有機成分中的環氧基的莫耳數設為M(單位為mol)，則T/M為400以上、8000以下。
藉由T/M為400以上，則成為在產生裂紋的狀態下亦難以彎折的材料。於T/M小於400的情況下，於產生裂紋的狀態下的強度變弱。另外，就強度的觀點而言，T/M較佳為450以上，更佳為500以上。另外，就接著性的觀點而言，T/M為8000以下。另外，就可靠性的觀點而言，T/M較佳為4000以下，更佳為2000以下，尤佳為1000以下。
繼而，對使用包含本發明的接著組成物的樹脂塗佈劑來製作接著膜的方法進行說明。本發明的接著膜的特徵在於具有包含本發明的接著組成物的層以及支持膜。本發明的接著膜是藉由將所述樹脂塗佈劑塗佈於支持膜上，繼而視需要對其進行乾燥而獲得。
本發明的接著膜具有包含本發明的接著組成物的層以及支持膜。此時所使用的支持膜並無特別限定，可使用聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)膜、聚苯硫醚膜、聚醯亞胺膜等通常市售的各種膜。例如可列舉作為聚對苯二甲酸乙二酯膜的賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)(Toray Advanced Film Co.,Ltd)製造)等。
對於包含本發明的接著組成物的層與支持膜的接合面，為了提高密合性及剝離性，亦可實施矽酮、矽烷偶合劑、鋁螯合劑等的表面處理。另外，支持膜的厚度並無特別限定，就作業性的觀點而言，較佳為10μm~75μm的範圍。
另外，為了保護接著膜的包含接著組成物的層，本發明的接著膜亦可於膜上具有保護膜。藉此，可保護接著膜的包含接著組成物的層的表面不受大氣中的灰塵或塵土等污染物質的影響。
保護膜可列舉：聚乙烯膜、聚丙烯(PP)膜、聚酯膜等。例如可列舉作為聚對苯二甲酸乙二酯膜的SR3(大槻工業(股)製造)等。保護膜較佳為與接著膜的包含接著組成物的層的接著力小的膜。
將包含本發明的接著組成物的樹脂塗佈劑塗佈於支持膜上的方法可列舉：噴射塗佈、輥塗佈、網版印刷、刮塗機、模塗機、壓光塗佈機、凹凸塗佈機(meniscus coater)、棒塗佈機、輥塗佈機、逗號輥塗佈機(comma roll coater)、凹版塗佈機、網版塗佈機、縫模塗佈機等方法。另外，塗佈膜厚根據塗佈方法、組成物的固體成分濃度、黏度等而不同，但通常，乾燥後的膜厚較佳為0.5μm以上、100μm以下。
乾燥時可使用烘箱、加熱板、紅外線等。乾燥溫度以及乾燥時間只要是可使有機溶劑揮發的範圍即可，較佳為適當設定接著膜的包含接著組成物的層成為未硬化或半硬化狀態的範圍。 具體而言，較佳為於40℃至120℃的範圍內進行1分鐘至數十分鐘。另外，亦可將該些溫度加以組合而階段性地升溫，例如亦可於50℃、60℃、70℃下各進行1分鐘熱處理。
繼而，對本發明的接著組成物的硬化後的物性進行說明。就可靠性的觀點而言，硬化後的該接著組成物的零下40℃下的彈性模數較佳為10GPa以上、15GPa以下，更佳為11GPa以上、14GPa以下，尤佳為11GPa以上、13GPa以下。此處所謂的零下40℃下的彈性模數，是指當對5mm×50mm×0.5mm尺寸的試驗片，以頻率1Hz、升溫速度5℃/分鐘、測定應變0.02%來進行動態黏彈性測定時的零下40℃下的彈性模數。
另外，本發明的接著組成物的硬化物的最大強度較佳為28N以上。藉由最大強度成為28N以上，則即便在半導體內部產生裂紋，亦可阻止半導體的破壞，可使可靠性升高。藉由將T/M設為400以上，最大強度可達成28N以上。此處所謂的最大強度，是指於4mm×20mm×2mm尺寸的長方體的2mm×20mm的面中，自寬2mm的兩邊起於長度方向上10mm的位置即中央的位置，在與寬2mm的兩邊平行的方向上形成深1.84mm、寬300μm的槽，且於槽部分製作裂紋而獲得試驗片，使用該試驗片，於23℃下、試驗速度為166.6μm/秒、支點高度為200μm的條件下，自試驗片的槽的相反部分起進行三點彎曲試驗時，試驗片彎折時的強度。
本發明的帶有接著組成物的基板的特徵在於具有包含 本發明的接著組成物的層以及基板。作為將本發明的接著組成物形成於基板上的方法，可利用使用旋轉器的旋轉塗佈、網版印刷、刮塗機、模塗機、壓光塗佈機、凹凸塗佈機、棒塗佈機、輥塗佈機、逗號輥塗佈機、凹版塗佈機、網版塗佈機、縫模塗佈機等方法來塗佈樹脂塗佈劑，亦可藉由熱壓處理、熱層壓處理、熱真空層壓處理等的熱壓接來形成塗佈於支持膜上而製作的接著膜。
本發明的半導體裝置具有包含本發明的接著組成物的層。本發明的接著組成物或樹脂塗佈劑、接著膜可作為用以進行半導體元件、電路基板、金屬配線材料的接著、固定或密封，或者用以增強晶圓的半導體用接著劑或半導體用塗佈劑來適當使用。另外，本發明中所謂的半導體裝置，是指可藉由利用半導體元件的特性來發揮功能的所有裝置，電光學裝置、半導體電路及電子設備全部包含於半導體裝置中。
對使用本發明的接著組成物的半導體裝置的製造方法進行說明。本發明的半導體裝置的製造方法是藉由使本發明的接著組成物嵌入至第一電路構件與第二電路構件之間，進行加熱加壓而使所述第一電路構件與所述第二電路構件電性連接的半導體裝置的製造方法。
具體而言，首先以第一電極與第二電極對向的方式來配置具有第一電極的第一電路構件、及具有第二電極的第二電路構件。繼而，使本發明的接著組成物嵌入至所述對向配置的第一電路構件與第二電路構件之間。此處，使接著組成物嵌入的方法可 於電路構件的表面直接塗佈接著組成物後將揮發成分去除，亦可於電路構件的表面貼合本發明的接著膜後將支持膜去除。接著組成物可僅形成於任一電路構件的電極側的面上，亦可形成於第一電路構件及第二電路構件的兩者的電極側的面上。然後，對該些進行加熱加壓，使第一電路構件與第二電路構件接著的同時，使所述對向配置的第一電極與第二電極電性連接。電極彼此的電性連接可藉由力學性的按壓而形成，亦可藉由使用焊料等的金屬接合而形成。另外，亦可於第一電路構件及/或第二電路構件上形成貫通電極，且於電路構件的其中一面及/或兩面形成電極。
繼而，對使用本發明的接著膜的情況的例子進行說明。藉由使用該方法，可將半導體晶片與形成有配線圖案的電路基板之間的空隙以接著組成物的硬化物進行密封。
首先，將接著膜切出為既定的大小，貼合於形成有配線圖案的電路基板的配線圖案面上而將支持膜去除。或者，亦可藉由在切出半導體晶片之前的半導體晶圓的凸塊形成面上貼合接著膜而去除支持膜後，將半導體晶圓進行切割而單片化，製作貼附有支持膜被去除的接著膜的半導體晶片。接著膜的貼合可使用輥層壓機或真空層壓機等貼合裝置來進行。
將接著膜貼合於電路基板或者半導體晶片上而去除支持膜後，利用接合裝置來進行半導體晶片於電路基板上的安裝。接合條件只要是良好地獲得電性連接的範圍，則並無特別限定，為了進行接著組成物的硬化，較佳為於溫度為100℃以上、壓力為 1mN/凸塊以上、時間為0.1秒以上的加熱加壓條件下進行。更佳為於如下的接合條件下進行：更佳為120℃以上、300℃以下，尤佳為150℃以上、250℃以下的溫度；更佳為5mN/凸塊以上、50000mN/凸塊以下，尤佳為10mN/凸塊以上、10000mN/凸塊以下的壓力；更佳為1秒以上、60秒以下，尤佳為2秒以上、30秒以下的時間。另外，接合時，作為暫時壓接，亦較佳為藉由溫度為50℃以上、壓力為1mN/凸塊以上、時間為0.1秒以上的加熱加壓，而使半導體晶片上的凸塊與電路基板上的焊墊電極(pad electrode)接觸後，以所述條件進行接合。視需要，亦可於進行接合後，將帶有半導體晶片的電路基板於50℃以上、200℃以下的溫度下加熱10秒以上、24小時以下。
本發明的接著組成物可作為用以使構成半導體裝置的電路構件彼此接著、固定或者密封的接著組成物來適當使用。另外，亦可用於構成增層多層基板等電路基板的絕緣層、永久抗蝕劑、阻焊劑、密封劑等或半導體裝置製造時使用的抗蝕刻劑等。此處，所謂電路構件，是指構成半導體裝置的半導體晶片、晶片零件、電路基板、金屬配線材料等構件。電路構件的具體例可列舉：形成有鍍敷凸塊或柱形凸塊(stud bump)等凸塊的半導體晶片、電阻晶片或電容器晶片等晶片零件、具有矽穿孔(Through Silicon Via，TSV)電極的半導體晶片以及矽中介層等。此外，本發明中所謂的半導體裝置，是指可藉由利用半導體元件的特性而發揮功能的所有裝置，半導體電路以及電子設備全部包含於半導 體裝置中。
另外，除了所述以外，本發明的接著組成物還可作為用以製作黏晶膜(die attach film)、切晶黏晶膜(dicing die attach film)、引線框架固定帶、散熱板、增強板、屏蔽材料的接著劑、阻焊劑等的接著組成物來使用。
[實施例]
以下列舉實施例等，對本發明進行說明，但本發明並不限定於該些例子。此外，實施例中的接著組成物的評價是利用以下方法來進行。
<最大強度的測定>
以中心距離成為16mm方式來固定夾具SHR-250-CAP-05-3(達格(Dage)(股)製造)，使用晶片剪切(die shear)試驗機達格系列(DAGE-SERIES)-4000PXY(達格(Dage)(股)製造)，自各實施例．比較例中獲得的試驗片的槽的相反部分起進行三點彎曲試驗。晶片剪切試驗是使用DS100控制版，於23℃下以試驗速度166.6μm/秒、支點高度200μm來進行。
<彈性模數的測定>
對於5mm×50mm×0.5mm尺寸的試驗片，使用動態黏彈性裝置DVA-200(IT計測控制(股)製造)，以頻率1Hz、升溫速度5℃/分鐘、測定應變0.02%來進行動態黏彈性測定，測定零下40℃下的彈性模數(GPa)。
另外，各實施例、比較例中使用的(A)聚醯亞胺的合 成是利用以下方法來進行。
合成例1 聚醯亞胺的合成
於乾燥氮氣流下，將1,3-雙(3-胺基苯氧基)苯4.82g(0.0165莫耳)、3,3'-二胺基-4,4'-二羥基二苯基碸3.08g(0.011莫耳)、雙胺基丙基四甲基二矽氧烷4.97g(0.02莫耳)、作為封端劑的苯胺0.47g(0.005莫耳)溶解於130g的NMP中。向其中與20g的NMP一併添加2,2-雙{4-(3,4-二羧基苯氧基)苯基}丙烷二酐26.02g(0.05莫耳)，於25℃下進行1小時反應，繼而於50℃下攪拌4小時。然後，於180℃下攪拌5小時。攪拌結束後，將溶液投入至3L的水中，進行過濾而回收沈澱，以水洗滌3次後，使用真空乾燥機，於80℃下乾燥20小時。對所得的聚合物固體的紅外吸收光譜進行測定，結果於1780cm-1附近、1377cm-1附近檢測出由聚醯亞胺引起的醯亞胺結構的吸收峰值。如上所述而獲得具有可與環氧基進行反應的官能基、且包含11.6重量%的通式(1)所表示的結構的聚醯亞胺。於4g的聚醯亞胺中添加四氫呋喃6g，於23℃下進行攪拌後溶解。
另外，各實施例、比較例中使用的其他成分如下所述。
(B)多官能環氧化合物
艾伯特(Epotohto)PG-207GS(新日鐵化學(股)製造)，環氧當量為314g/eq，液狀環氧化合物
jER1010(三菱化學(股)製造)，環氧當量為3770g/eq
YL980(三菱化學(股)製造)，環氧當量為185g/eq，液狀 環氧化合物
jER1009(三菱化學(股)製造)，環氧當量為2719g/eq
N865(迪愛生(DIC)(股)製造)，環氧當量為205g/eq
NC3000H(日本化藥(股)製造)，環氧當量為287g/eq。
(C)環氧硬化劑
2PZ(四國化成工業(股)製造，咪唑系硬化劑)
諾巴固(Novacure)HX-3941HP(旭化成電子材料(Asahi Kasei E-Materials)(股)製造，芳香族多胺系硬化劑)。
(D)無機粒子
SE2050-KNK(亞都瑪科技(Admatechs)(股)製造，利用含苯基胺基的矽烷偶合劑進行處理的二氧化矽，甲基異丁基酮溶劑分散品，固體成分濃度為70.0重量%，二氧化矽的平均粒徑為0.57μm)
SE2050-ENA(亞都瑪科技(股)製造，利用含苯基胺基的矽烷偶合劑進行處理的二氧化矽，卡必醇溶劑分散品，固體成分濃度為70.0重量%，二氧化矽的平均粒徑為0.6μm)。
(E)有機溶劑
丙二醇單甲醚乙酸酯(propylene glycol monomethyl ether acetate，以下有時稱為「PGMEA」)(東京化成工業(股)製造)。
實施例1
將合成例1中獲得的聚醯亞胺5.83g、艾伯特(Epotohto)PG-207GS(新日鐵化學(股)製造，環氧當量為314g/eq)9.32g、 jER1010(三菱化學(股)製造，環氧當量為3770g/eq)17.48g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.0g、丙二醇單甲醚乙酸酯5.70g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑1(T/M=970g/mol)。
此外，T/M的值的計算方法如以下所述，於其他的實施例．比較例中亦利用同樣的方法來計算。
T(非揮發性有機成分的總克數)=5.83+9.32+17.48+0.67
M(非揮發性有機成分中的環氧基的莫耳數)=9.32/314+17.48/3770
T/M=(5.83+9.32+17.48+0.67)/(9.32/314+17.48/3770)=970
實施例2
將合成例1中獲得的聚醯亞胺51.45g、YL980(三菱化學(股)製造，環氧當量為185g/eq)65.17g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)51.45g、2PZ(四國化成工業(股)製造)3.43g、SE2050-KNK(亞都瑪科技(股)製造)455.0g、PGMEA 73.50g添加於2L塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑2(T/M=462g/mol)。利用黏度計RE105L(東機產業(股)製造)來測定0.1rpm下的黏度，結果為2600cP。另外，於溫度為25℃、濕度為50%的恆溫恆濕器 中保管24小時後，測定0.1rpm下的黏度，結果為2800cP，確認到室溫下的保存穩定性優異。
實施例3
將合成例1中獲得的聚醯亞胺44.10g、YL980(三菱化學(股)製造，環氧當量為185g/eq)55.86g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)44.10g、2PZ(四國化成工業(股)製造)2.94g、SE2050-KNK(亞都瑪科技(股)製造)490.0g、PGMEA 63.00g添加於2L塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑3(T/M=462g/mol)。
實施例4
將合成例1中獲得的聚醯亞胺3.15g、YL980(三菱化學(股)製造，環氧當量為185g/eq)8.82g、jER1010(三菱化學(股)製造，環氧當量為3770g/eq)18.90g、2PZ(四國化成工業(股)製造)0.63g、SE2050-KNK(亞都瑪科技(股)製造)105.0g、PGMEA 13.50g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑4(T/M=598g/mol)。
實施例5
使用棒塗佈機，將實施例1中製備的樹脂塗佈劑1塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜 面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜1的積層體。接著膜1中的由樹脂塗佈劑1獲得的層的厚度為30μm。
實施例6
以於加熱至100℃的烘箱中乾燥10分鐘的條件，使用多用途塗佈機(井上金屬工業(股))將實施例2中製備的樹脂塗佈劑2塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜2的積層體。接著膜2中的由樹脂塗佈劑2獲得的層的厚度為30μm。
實施例7
以於加熱至100℃的烘箱中乾燥10分鐘的條件，使用多用途塗佈機(井上金屬工業(股))，將實施例3中製備的樹脂塗佈劑3塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜3的積層體。接著膜3中的由樹脂塗佈劑3獲得的層的厚度為30μm。
實施例8
使用棒塗佈機，將實施例4中製備的樹脂塗佈劑4塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保 護膜，製造保護膜與接著膜4的積層體。接著膜4中的由樹脂塗佈劑4獲得的層的厚度為30μm。
實施例9
將由實施例5製造的保護膜與接著膜1的積層體切斷為8cm見方的尺寸，製作2個自該積層體上剝離保護膜而得者。繼而，以由樹脂塗佈劑1獲得的層彼此重疊的方式進行積層，獲得支持膜-由樹脂塗佈劑1獲得的層(2份)-支持膜的積層體。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。
繼而，製作另一個所述積層體，製作2個將2個積層體各自的其中一層支持膜剝離而得者。繼而，以由樹脂塗佈劑1獲得的層彼此重疊的方式進行積層，獲得支持膜-由樹脂塗佈劑1獲得的層(4份)-支持膜的積層體。以與所述相同的條件進行積層，且藉由反覆進行該積層來製作支持膜-由樹脂塗佈劑1獲得的層(厚度為2mm)-支持膜的積層體。
繼而，將所述積層體的兩側的支持膜剝離，取而代之的是製作於兩側貼附有「鐵氟龍(Teflon)(註冊商標)」膜的膜。將所得的「鐵氟龍(Teflon)(註冊商標)」膜-由樹脂塗佈劑1獲得的層(厚度為2mm)-「鐵氟龍(Teflon)(註冊商標)」膜的積層體，首先花1小時升溫至200℃，繼而，於200℃下放置2小時，藉此進行由樹脂塗佈劑1獲得的層(厚度為2mm)的硬化。自所 得的「鐵氟龍(Teflon)(註冊商標)」膜-硬化物-「鐵氟龍(Teflon)(註冊商標)」膜的積層體上剝離兩側的「鐵氟龍(Teflon)(註冊商標)」膜，獲得硬化物1。
使用切割裝置DAD3350(迪思科(Disco)(股)製造)將所製作的硬化物1切斷，製作寬2mm、長20mm、高4mm的長方體。於2mm×20mm的面中，自寬2mm的兩邊起於長度方向上10mm的位置即中央的位置上，在與寬2mm的兩邊平行的方向上，使用切割裝置DAD3350((股)迪思科製造)，形成深1.84mm、寬300μm的槽。以所得的帶有槽的方塊片(block piece)的槽為上的方式設置於水平的台座上。繼而，以單刃99129(羽毛安全剃刀(Feather Safety Razor)(股)製造)的刃的部分為下的方式嵌入帶有槽的方塊片的槽部分中，從自單刃的背的部分起高3cm的位置，使重量為20g的砝碼落下，製作於槽部分形成有裂紋的試驗片1。利用光學顯微鏡來確認裂紋的有無。
對於所得的試驗片1，利用所述方法來測定最大強度，結果為36.0N。
繼而，利用相同的方法來製作支持膜-由樹脂塗佈劑1獲得的層(厚度為0.5mm)-支持膜的積層體。將所得的積層體的兩側的支持膜剝離，取而代之的是製作於兩側貼附有「鐵氟龍(Teflon)(註冊商標)」膜的膜。將所得的「鐵氟龍(Teflon)(註冊商標)」膜-由樹脂塗佈劑1獲得的層(厚度為0.5mm)-「鐵氟龍(Teflon)(註冊商標)」膜的積層體，於200℃的烘箱中加熱15 分鐘，獲得硬化物1A。使用切割裝置DAD3350((股)迪思科製造)，將所製作的硬化物1A切斷，製作寬5mm、長50mm、高0.5mm的板狀試驗片1A。對於所得的板狀試驗片1A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
實施例10
除了將接著膜1變更為接著膜2以外，利用與實施例9相同的方法來製作硬化物2，除了將硬化物1變更為硬化物2以外，利用與實施例9相同的方法來製作試驗片2。繼而，對於所得的試驗片2，利用所述方法來測定最大強度，結果最大強度為30.0N。
另外，除了將接著膜1變更為接著膜2以外，利用與實施例9相同的方法來製作硬化物2A，除了將硬化物1A變更為硬化物2A以外，利用與實施例9相同的方法來製作板狀試驗片2A。繼而，對於所得的板狀試驗片2A，利用所述方法來測定零下40℃下的彈性模數，結果為11GPa。
實施例11
除了將接著膜1變更為接著膜3以外，利用與實施例9相同的方法來製作硬化物3，除了將硬化物1變更為硬化物3以外，利用與實施例9相同的方法來製作試驗片3。繼而，對於所得的試驗片3，利用所述方法來測定最大強度，結果最大強度為33.0N。
另外，除了將接著膜1變更為接著膜3以外，利用與實施例9相同的方法來製作硬化物3A，除了將硬化物1A變更為硬化物3A以外，利用與實施例9相同的方法來製作板狀試驗片3A。 繼而，對於所得的板狀試驗片3A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
實施例12
除了將接著膜1變更為接著膜4以外，利用與實施例9相同的方法來製作硬化物4，除了將硬化物1變更為硬化物4以外，利用與實施例9相同的方法來製作試驗片4。繼而，對於所得的試驗片4，利用所述方法來測定最大強度，結果最大強度為38.9N。
另外，除了將接著膜1變更為接著膜4以外，利用與實施例9相同的方法來製作硬化物4A，除了將硬化物1A變更為硬化物4A以外，利用與實施例9相同的方法來製作板狀試驗片4A。繼而，對於所得的板狀試驗片4A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例1
將YL980(三菱化學(股)製造，環氧當量為185g/eq)11.49g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)9.82g、N865(迪愛生(DIC)(股)製造，環氧當量為205g/eq)11.32g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.0g、PGMEA 5.70g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑5(T/M=275g/mol)。利用黏度計RE105L(東機產業(股)製造)來測定1rpm下的黏度，結果為280cP。另外，於溫度為 25℃、濕度為50%的恆溫恆濕器中保管24小時後，測定1rpm下的黏度，結果為280cP，未出現黏度的變化。進而於溫度為25℃、濕度為50%的恆溫恆濕器中保管120小時後，測定1rpm下的黏度，結果為280cP，基本上未出現黏度的變化，確認到室溫下的保存穩定性優異。
比較例2
將合成例1中獲得的聚醯亞胺0.98g、YL980(三菱化學(股)製造，環氧當量為185g/eq)11.49g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)8.84g、N865(迪愛生(DIC)(股)製造，環氧當量為205g/eq)11.32g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.00g、PGMEA 5.70g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑6(T/M=276g/mol)。
比較例3
將YL980(三菱化學(股)製造，環氧當量為185g/eq)11.49g、jER1010(三菱化學(股)製造，環氧當量為3770g/eq)9.82g、N865(迪愛生(DIC)(股)製造，環氧當量為205g/eq)11.32g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.00g、PGMEA 5.70g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗 佈劑7(T/M=278g/mol)。
比較例4
將jER1009(三菱化學(股)製造，環氧當量為2719g/eq)10.96g、N865(迪愛生(DIC)(股)製造，環氧當量為205g/eq)12.63g、SE2050-KNK(亞都瑪科技(股)製造)78.00g、PGMEA 15.60g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌72小時。進而添加微膠囊型硬化促進劑諾巴固(Novacure)HX-3941HP(旭化成電子材料(股)製造)12.81g，於室溫下在球磨機架台上攪拌2小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑8。利用黏度計RE105L(東機產業(股)製造)來測定0.1rpm下的黏度，結果為3200cP。另外，於溫度為25℃、濕度為50%的恆溫恆濕器中保管24小時後，測定0.1rpm下的黏度，結果為4030cP，出現黏度的大幅度上升。進而於溫度為25℃、濕度為50%的恆溫恆濕器中保管48小時後，測定0.1rpm下的黏度，結果為5700cP，黏度上升，因此確認到室溫下的保存穩定性存在問題。
比較例5
將合成例1中獲得的聚醯亞胺9.82g、YL980(三菱化學(股)製造，環氧當量為185g/eq)11.49g、N865(迪愛生(DIC)(股)製造，環氧當量為205g/eq)11.32g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.0g、PGMEA 5.70g添加於250mL塑膠容器中，於室溫下在球磨機架 台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑9(T/M=284g/mol)，該樹脂塗佈劑中，相對於環氧化合物100重量份，聚醯亞胺為約43重量份且環氧硬化劑為約2.7重量份。
比較例6
將合成例1中獲得的聚醯亞胺4.91g、YL980(三菱化學(股)製造，環氧當量為185g/eq)6.66g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)4.91g、NC3000H(日本化藥(股)製造，環氧當量為287g/eq)16.15g、2PZ(四國化成工業(股)製造)0.67g、SE2050-KNK(亞都瑪科技(股)製造)111.0g、PGMEA 5.70g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑10(T/M=354g/mol)。
比較例7
將合成例1中獲得的聚醯亞胺0.88g、YL980(三菱化學(股)製造，環氧當量為185g/eq)5.88g、jER1010(三菱化學(股)製造，環氧當量為3770g/eq)7.79g、NC3000H(日本化藥(股)製造，環氧當量為287g/eq)14.26g、2PZ(四國化成工業(股)製造)0.59g、SE2050-KNK(亞都瑪科技(股)製造)98.00g、PGMEA 12.60g添加於250mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑11(T/M=352g/mol)。
比較例8
使用棒塗佈機，將比較例1中製備的樹脂塗佈劑5塗佈於厚度為75μm的支持膜的賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜5的積層體。接著膜5中的由樹脂塗佈劑5獲得的層的厚度為30μm。
比較例9
使用棒塗佈機，將比較例2中製備的樹脂塗佈劑6塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜6的積層體。接著膜6中的由樹脂塗佈劑6獲得的層的厚度為30μm。
比較例10
使用棒塗佈機，將比較例3中製備的樹脂塗佈劑7塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜7的積層體。接著膜7中的由樹脂塗佈劑7獲得的層的厚度為30μm。
比較例11
使用棒塗佈機，將比較例5中製備的樹脂塗佈劑9塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜9的積層體。接著膜9中的由樹脂塗佈劑9獲得的層的厚度為30μm。
比較例12
使用棒塗佈機，將比較例6中製備的樹脂塗佈劑10塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜10的積層體。接著膜10中的由樹脂塗佈劑10獲得的層的厚度為30μm。
比較例13
使用棒塗佈機，將比較例7中製備的樹脂塗佈劑11塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於加熱至100℃的烘箱中乾燥10分鐘。於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜11的積層體。接著膜11中的由樹脂塗佈劑11獲得的層的厚度為30μm。
比較例14
除了將接著膜1變更為接著膜5以外，利用與實施例9相同 的方法來製作硬化物5，除了將硬化物1變更為硬化物5以外，利用與實施例9相同的方法來製作試驗片5。繼而，對於所得的試驗片5，利用所述方法來測定最大強度，結果最大強度為15.1N。
另外，除了將接著膜1變更為接著膜5以外，利用與實施例9相同的方法來製作硬化物5A，除了將硬化物1A變更為硬化物5A以外，利用與實施例9相同的方法來製作板狀試驗片5A。繼而，對於所得的板狀試驗片5A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例15
除了將接著膜1變更為接著膜6以外，利用與實施例9相同的方法來製作硬化物6，除了將硬化物1變更為硬化物6以外，利用與實施例9相同的方法來製作試驗片6。繼而，對於所得的試驗片6，利用所述方法來測定最大強度，結果最大強度為14.4N。
另外，除了將接著膜1變更為接著膜6以外，利用與實施例9相同的方法來製作硬化物6A，除了將硬化物1A變更為硬化物6A以外，利用與實施例9相同的方法來製作板狀試驗片6A。繼而，對於所得的板狀試驗片6A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例16
除了將接著膜1變更為接著膜7以外，利用與實施例9相同的方法來製作硬化物7，除了將硬化物1變更為硬化物7以外，利用與實施例9相同的方法來製作試驗片7。繼而，對於所得的試驗 片7，利用所述方法來測定最大強度，結果最大強度為13.9N。
另外，除了將接著膜1變更為接著膜7以外，利用與實施例9相同的方法來製作硬化物7A，除了將硬化物1A變更為硬化物7A以外，利用與實施例9相同的方法來製作板狀試驗片7A。繼而，對於所得的板狀試驗片7A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例17
除了將接著膜1變更為接著膜9以外，利用與實施例9相同的方法來製作硬化物9，除了將硬化物1變更為硬化物9以外，利用與實施例9相同的方法來製作試驗片9。繼而，對於所得的試驗片9，利用所述方法來測定最大強度，結果最大強度為15.4N。
另外，除了將接著膜1變更為接著膜9以外，利用與實施例9相同的方法來製作硬化物9A，除了將硬化物1A變更為硬化物9A以外，利用與實施例9相同的方法來製作板狀試驗片9A。繼而，對於所得的板狀試驗片9A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例18
除了將接著膜1變更為接著膜10以外，利用與實施例9相同的方法來製作硬化物10，除了將硬化物1變更為硬化物10以外，利用與實施例9相同的方法來製作試驗片10。繼而，對於所得的試驗片10，利用所述方法來測定最大強度，結果最大強度為19.6N。
另外，除了將接著膜1變更為接著膜10以外，利用與實施例9相同的方法來製作硬化物10A，除了將硬化物1A變更為硬化物10A以外，利用與實施例9相同的方法來製作板狀試驗片10A。繼而，對於所得的板狀試驗片10A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
比較例19
除了將接著膜1變更為接著膜11以外，利用與實施例9相同的方法來製作硬化物11，除了將硬化物1變更為硬化物11以外，利用與實施例9相同的方法來製作試驗片11。繼而，對於所得的試驗片11，利用所述方法來測定最大強度，結果最大強度為18.0N。
另外，除了將接著膜1變更為接著膜11以外，利用與實施例9相同的方法來製作硬化物11A，除了將硬化物1A變更為硬化物11A以外，利用與實施例9相同的方法來製作板狀試驗片11A。繼而，對於所得的板狀試驗片11A，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
實施例13
將合成例1中獲得的聚醯亞胺3.78g、YL980(三菱化學(股)製造，環氧當量為185g/eq)15.12g、NC3000H(日本化藥(股)製造，環氧當量為287g/eq)15.12g、jER1009(三菱化學(股)製造，環氧當量為2719g/eq)28.73g、jER1010(三菱化學(股)製造，環氧當量為3770g/eq)11.34g、2PZ(四國化成工業(股) 製造)1.51g、SE2050-ENA(亞都瑪科技(股)製造)252.0g、卡必醇22.40g添加於500mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑1B(T/M=511g/mol)。
實施例14
將合成例1中獲得的聚醯亞胺8.64g、YL980(三菱化學(股)製造，環氧當量為185g/eq)16.85g、jER1010(三菱化學(股)製造，環氧當量為3770g/eq)17.28g、2PZ(四國化成工業(股)製造)0.43g、SE2050-ENA(亞都瑪科技(股)製造)144.0g、卡必醇12.80g添加於500mL塑膠容器中，於室溫下在球磨機架台上攪拌96小時。然後，使用保留粒徑為10μm的過濾器，對所得的混合液進行加壓過濾，獲得樹脂塗佈劑2B(T/M=452g/mol)。
實施例15
以於加熱至100℃的烘箱中乾燥10分鐘的條件，使用多用途塗佈機(井上金屬工業(股))，將實施例13中製備的樹脂塗佈劑1B塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜1B的積層體。接著膜1B中的由樹脂塗佈劑1B獲得的層的厚度為30μm。
實施例16
以於加熱至100℃的烘箱中乾燥10分鐘的條件，使用多用途 塗佈機(井上金屬工業(股))，將實施例14中製備的樹脂塗佈劑2B塗佈於厚度為75μm的支持膜賽拉皮爾(Cerapeel)HP2(U)(東麗膜加工(股)製造)上，於塗膜面上貼附厚度為25μm的SR3(大槻工業(股)製造)來作為保護膜，製造保護膜與接著膜2B的積層體。接著膜2B中的由樹脂塗佈劑2B獲得的層的厚度為30μm。
實施例17
除了將接著膜1變更為接著膜1B以外，利用與實施例9相同的方法來製作硬化物1B，除了將硬化物1變更為硬化物1B以外，利用與實施例9相同的方法來製作試驗片1B。繼而，對於所得的試驗片1B，利用所述方法來測定最大強度，結果最大強度為34.3N。
另外，除了將接著膜1變更為接著膜1B以外，利用與實施例9相同的方法來製作硬化物1B，除了將硬化物1A變更為硬化物1B以外，利用與實施例9相同的方法來製作板狀試驗片1B。繼而，對於所得的板狀試驗片1B，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
實施例18
除了將接著膜1變更為接著膜2B以外，利用與實施例9相同的方法來製作硬化物2B，除了將硬化物1變更為硬化物2B以外，利用與實施例9相同的方法來製作試驗片2B。繼而，對於所得的試驗片2B，利用所述方法來測定最大強度，結果最大強度為29.0 N。
另外，除了將接著膜1變更為接著膜2B以外，利用與實施例9相同的方法來製作硬化物2B，除了將硬化物1A變更為硬化物2B以外，利用與實施例9相同的方法來製作板狀試驗片2B。繼而，對於所得的板狀試驗片2B，利用所述方法來測定零下40℃下的彈性模數，結果為13GPa。
實施例19
使用狹縫塗佈機，將實施例2中製備的樹脂塗佈劑2塗佈於12吋晶圓上，利用加熱板使基板於80℃下乾燥10分鐘。在與塗佈方向相同方向的直線上且通過300mm晶圓的中心的直線上，測定自塗佈起始端起5cm、10cm、15cm、20cm、25cm的地點的膜厚，結果確認到可形成厚度為36±1μm且面內均勻性優異的塗膜。將所得的基板於設定為200℃的烘箱中煅燒15分鐘，於晶圓上形成硬化膜。以目視來確認在晶圓與硬化膜之間未剝離。
實施例20
使用狹縫塗佈機，將實施例4中製備的樹脂塗佈劑4塗佈於12吋晶圓上，利用加熱板使基板於80℃下乾燥10分鐘。在與塗佈方向相同方向的直線上且通過300mm晶圓的中心的直線上，測定自塗佈起始端起5cm、10cm、15cm、20cm、25cm的地點的膜厚，結果確認到可形成厚度為25±1μm且面內均勻性優異的塗膜。將所得的基板於設定為200℃的烘箱中煅燒15分鐘，於晶圓上形成硬化膜。以目視來確認在晶圓與硬化膜之間未剝離。
實施例21
使用狹縫塗佈機，將實施例2中製備的樹脂塗佈劑2塗佈於直徑為70μm且以100μm的間距配置有銅柱(高度為20μm)的12吋晶圓上，利用加熱板使基板於80℃下乾燥10分鐘。確認到無銅柱的部分的膜厚為41μm，且有銅柱的部分與無銅柱的部分的階差小於1μm。將所得的基板於設定為200℃的烘箱中煅燒15分鐘，於晶圓上形成硬化膜。以目視來確認在晶圓與硬化膜之間未剝離。
實施例22
準備自實施例6中製造的保護膜與接著膜2的積層體上剝離保護膜而得者，以由實施例2中製備的樹脂塗佈劑2獲得的層與1cm×1cm尺寸的晶片(矽晶圓的厚度為625μm，直徑為25μm且以50μm的間距配置有銅柱(高度為25μm)的晶片)的銅柱形成面重疊的方式進行積層，製作基板積層體1。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。繼而，準備自實施例6中製造的保護膜與接著膜2的積層體上剝離保護膜而得者，以由實施例2中製備的樹脂塗佈劑2獲得的層與15mm×15mm尺寸的玻璃環氧基板(厚度為10mm)重疊的方式進行積層，製作基板積層體2。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加 壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。
繼而，準備自基板積層體1上剝離支持膜而得者、及自基板積層體2上剝離支持膜而得者，以由實施例2中製備的樹脂塗佈劑2獲得的層彼此重疊的方式進行積層，製作基板積層體3。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。將所得的基板積層體3於180℃下加熱1小時，製作基板積層體4。將所得的基板積層體4於溫度為85℃、濕度為85%的恆溫恆濕度槽(楠本化成(股)製造，FX214P)內放置168小時，獲得基板積層體5。利用冷熱衝擊裝置(愛斯佩克(Espec)(股)製造，TSE-11-A)，將所得的基板積層體5於溫度-55℃下放置30分鐘，於溫度125℃下放置30分鐘，將所述放置步驟重複1000次，獲得基板積層體6。利用掃描電子顯微鏡(日本電子(股)製造，JSM-6510A)來觀察基板積層體6的剖面，確認在由樹脂塗佈劑2獲得的層、與晶片的矽晶圓部分之間無間隙。另外，確認在由樹脂塗佈劑2獲得的層、與銅柱部分之間無間隙。
實施例23
準備自實施例6中製造的保護膜與接著膜2的積層體上剝離保護膜而得者，將由實施例2中製備的樹脂塗佈劑2獲得的層積層於1cm×1cm尺寸的銅板(厚度為15mm)上，製作基板積層體7。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)， 將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。繼而，準備自實施例6中製造的保護膜與接著膜2的積層體上剝離保護膜而得者，以由實施例2中製備的樹脂塗佈劑2獲得的層與15mm×15mm尺寸的玻璃環氧基板(厚度為10mm)重疊的方式進行積層，製作基板積層體8。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。
繼而，準備自基板積層體7上剝離支持膜而得者、及自基板積層體8上剝離支持膜而得者，以由實施例2中製備的樹脂塗佈劑2獲得的層彼此重疊的方式進行積層，製作基板積層體9。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。將所得的基板積層體9於180℃下加熱1小時，製作基板積層體10。利用冷熱衝擊裝置(愛斯佩克(Espec)(股)製造，TSE-11-A)，將所得的基板積層體10於溫度-55℃下放置30分鐘，於溫度125℃下放置30分鐘，將所述放置步驟重複1000次，以目視來確認銅板接著。
實施例24
準備自利用與實施例6相同的方法來製造的保護膜與接著膜 2的積層體(由樹脂塗佈劑2獲得的層的厚度為50μm)上剝離保護膜而得者，以由樹脂塗佈劑2獲得的層與帶有銅柱凸塊的測試元件組(Test Element Group，TEG)晶片(沃爾茨(Walts)(股)製造，WALTS-TEG CC80-0101JY(SiN)_型號(Model)I)的銅柱凸塊形成面重疊的方式進行積層，製作基板積層體11。使用真空層壓裝置MVLP-500/600(名機製作所(股)製造)，將上熱盤及下熱盤的溫度設為90℃，將真空時間設為20秒，將加壓力設為0.3MPa，且將加壓時間設為30秒，來進行積層。接著，將支持膜剝離，製作帶有接著組成物的評價晶片。然後，利用倒裝晶片接合裝置(東麗工程(Toray Engineering)(股)製造，FC-3000WS)，於成為黏附體的基板(沃爾茨(Walts)(股)製造，WALTS-KIT CC80-0103JY[MAP]_Model I(Cu+OSP規格))上進行倒裝晶片接合，獲得半導體裝置。倒裝晶片接合的條件為：將基板放置於經加熱至140℃的接合平台上，以溫度為140℃、壓力為150N/晶片、時間為1秒的條件進行暫時壓接後，以溫度為250℃、壓力為150℃的條件，將時間設為5秒來進行正式壓接。利用冷熱衝擊裝置(愛斯佩克(Espec)(股)製造，TSE-11-A)，將所得的半導體裝置於溫度-55℃下放置30分鐘，於溫度125℃下放置30分鐘，將所述放置步驟重複500次，確認導通。
將樹脂塗佈劑的組成歸納於表1中，將試驗片的最大強度以及零下40℃下的彈性模數歸納於表2中。

Claims (10)

  1. 一種接著組成物，其特徵在於：含有(A)聚醯亞胺、(B)多官能環氧化合物、(C)環氧硬化劑及(D)無機粒子，並且非揮發性有機成分中的所述(A)聚醯亞胺的比例為3.0重量%以上且30重量%以下，非揮發性有機成分中的所述(C)環氧硬化劑的比例為0.5重量%以上且10重量%以下，且將非揮發性有機成分的總克數設為T，將非揮發性有機成分中的環氧基的莫耳數設為M，則T/M為400以上且8000以下，所述非揮發性成分是將非揮發性有機成分與非揮發性無機成分合併的成分，所述(A)聚醯亞胺具有通式(2)或通式(3)所表示的結構，且在側鏈上具有至少一個可與環氧基進行反應的官能基，並且相對於聚合物總量而具有5重量%~15重量%的通式(1)所表示的結構來作為通式(2)或通式(3)中的R4，
    Figure TWI639668B_C0001
    式中，R1為2價烴基，R2為1價烴基；可於聚醯亞胺的1分子內包含不同結構的R1及R2，亦可於不同的聚醯亞胺分子間包含不同結構的R1及R2；n表示1~10的整數，
    Figure TWI639668B_C0002
    Figure TWI639668B_C0003
    式中，R3為4價~14價有機基，R4為2價~12價有機基，R3、R4的至少一者含有至少一個選自由1,1,1,3,3,3-六氟丙基、異丙基、醚基、硫醚基及SO2基所組成的組群中的基團；R5及R6表示具有至少一個選自由酚性羥基、磺酸基及硫醇基所組成的組群中的基團的有機基；可於聚醯亞胺的1分子內包含不同結構的R3~R6，亦可於不同的聚醯亞胺分子間包含不同結構的R3~R6；X表示1價有機基；m為8~200；α及β分別表示0~10的整數，α+β為0~10的整數；其中，重複數m中，20%~90%為α+β=1~10。
  2. 如申請專利範圍第1項所述的接著組成物，其中至少使用環氧當量為1000以上且7000以下的環氧化合物來作為(B)多官能環氧化合物。
  3. 如申請專利範圍第2項所述的接著組成物，其中還使用液狀環氧化合物作為(B)多官能環氧化合物。
  4. 如申請專利範圍第1項或第2項所述的接著組成物，其中(D)無機粒子於非揮發性成分中所佔的含量為50重量%以上且80重量%以下。
  5. 如申請專利範圍第1項或第2項所述的接著組成物，其中硬化後的接著組成物的零下40℃下的彈性模數為10GPa以上且15GPa以下。
  6. 如申請專利範圍第1項或第2項所述的接著組成物，其中硬化後的接著組成物的23℃下的最大強度為28N以上。
  7. 一種接著膜，其特徵在於具有：包含如申請專利範圍第1項至第6項中任一項所述的接著組成物的層以及支持膜。
  8. 一種帶有接著組成物的基板，其特徵在於具有：包含如申請專利範圍第1項至第6項中任一項所述的接著組成物的層以及基板。
  9. 一種半導體裝置，其具有包含如申請專利範圍第1項至第6項中任一項所述的接著組成物的層。
  10. 一種半導體裝置的製造方法，其藉由使如申請專利範圍第1項至第6項中任一項所述的接著組成物嵌入至第一電路構件與第二電路構件之間，進行加熱加壓而使所述第一電路構件與所述第二電路構件電性連接。
TW104101197A 2014-01-15 2015-01-14 接著組成物及具有其的接著膜、帶有接著組成物的基板、半導體裝置及其製造方法 TWI639668B (zh)

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