TWI639206B - Detecting system and method for dtecting through-hole electrodes of semiconductor device - Google Patents

Abstract

The invention discloses a detection system and a detection method for detecting the conduction state of M through-hole electrodes of a semiconductor component, wherein M is a natural number. The detection system according to the invention comprises M probes and M display units. Each probe corresponds to one light emitting element and one through hole electrode. When each probe is actuated to contact its corresponding via electrode, its corresponding display unit selectively displays a light or a signal to indicate the conductive state of its corresponding via electrode.

Description

Detection system and detection method for detecting conduction state of through-hole electrodes of semiconductor elements

The present invention relates to a detection system and a detection method for detecting a conduction state of a via electrode of a semiconductor element.

With the development of semiconductor devices, existing semiconductor devices have via electrodes formed thereon, that is, through holes are formed in the semiconductor devices, and conductive materials are filled in to form via electrodes.

Taking a bismuth-based solar cell as an example, the positive and negative electrodes of a conventional bismuth-based solar cell are respectively located on the light receiving surface and the backlight surface of the ruthenium wafer. However, the electrode located on the front side of the battery sheet will block the light receiving surface, reduce the light receiving area, and affect the photoelectric conversion efficiency of the silicon-based solar cell. Conventional germanium-based solar cells provide a soldering area on the light-receiving surface of the grid electrode, and are soldered to other modules as a module.

A metal-wrap-through (MWT) silicon-based solar cell is a silicon-based solar cell that solves the problem that the light-receiving surface of a conventional germanium-based solar cell is blocked. The MWT germanium-based solar cell is formed by filling a through hole with a metal conductive paste and sintering it to form a via electrode. The via electrode leads the gate electrode on the front side of the germanium-based solar cell to the backlight surface of the germanium-based solar cell, and the coupling between the via electrodes is realized by the front surface of the light-receiving surface having a smaller area, thereby reducing the gate line. Occlusion of the light-receiving surface. There is no soldered area on the front side of the MWT germanium-based solar cell. Existing MWT 矽 based solar power Although the pool reduces the shading area of the grid line, the photoelectric conversion efficiency is improved to some extent. However, if the via electrode is poorly conducted, the filling factor of the MWT germanium-based solar cell is lowered, and the photoelectric conversion efficiency is lowered.

The existing MWT germanium-based solar cells detect the conduction state of the via electrodes after the formation of the via electrodes. At present, electroluminescence (EL) detection methods are mostly used to detect the conduction state of the via electrodes. However, the image detected by the EL detection only allows the operator to see the display of the light gray scale, but it is impossible to confirm which hole in the wafer is not turned on, and quantitative detection cannot be performed.

At present, there is a need for better detection systems and methods, which can eliminate the incomplete ruthenium wafers with incomplete hole-filled metal conductive adhesives in the manufacturing process of MWT-based solar cells, which can shorten the detection time of through-hole electrodes and assist in mass production. Adjust process parameters.

Therefore, one technical problem to be solved by the present invention is to provide a detection system and a detection method for detecting a conduction state of a via electrode of a semiconductor element. The detection system and the detection method according to the invention can eliminate the incomplete 矽 wafer screening of the abnormal hole filling in the manufacturing process of the MWT 矽-based solar cell, can shorten the detection time of the through-hole electrode, and further assist the mass production to quickly adjust the process parameters. The detection system and the detection method according to the present invention can also detect the conduction state of the via electrodes of various types of semiconductor elements.

A detection system according to a preferred embodiment of the present invention is for detecting a conduction state of M through-hole electrodes of a semiconductor element, wherein M is a natural number. Each of the via electrodes penetrates from the first surface of the semiconductor element to the second surface of the semiconductor element. A detection system in accordance with the present invention includes a carrier, a probe device, a display device, and a power source. At least the upper surface of the carrier is electrically conductive. The semiconductor component is placed on the upper surface of the carrier. The probe device contains M probes. Each probe corresponds to a through hole electrode. The display device includes M display units. Each display unit corresponds to a probe and is electrically connected in series to the root probe. The power supply is electrically connected to the display device and the carrier, respectively. The power source is used to supply power to the display device, the probe device, and the carrier. When the probe device is actuated such that each probe contacts its corresponding via electrode, each display unit selectively displays a light or a signal to indicate the conductive state of its corresponding via electrode.

A detecting method according to a preferred embodiment of the present invention is for detecting a conduction state of M through-hole electrodes of a semiconductor element, wherein M is a natural number. Each of the via electrodes penetrates from the first surface of the semiconductor element to the second surface of the semiconductor element. First, the detection method according to the present invention provides a carrier. At least the upper surface of the carrier is electrically conductive. The semiconductor component is placed on the upper surface of the carrier. Next, the detection method according to the present invention provides M probes. Each probe corresponds to a through hole electrode. Next, the detection method according to the present invention provides M display units. Each display unit corresponds to a probe and is electrically connected in series to the root probe. Next, according to the detection method of the present invention, each display unit and its corresponding probe, its corresponding via electrode and carrier plate form a loop and provide power. Finally, the detecting method according to the present invention selectively displays a light or a signal by each display unit to indicate the conduction state of the corresponding via electrode of each display unit.

In one embodiment, the display device can be a liquid crystal display, an organic light emitting diode display, a semiconductor light emitting diode display, or other types of display devices.

In one embodiment, each display unit is comprised of at least one light emitting element. Each of the light-emitting elements may be a semiconductor light-emitting diode element, an organic light-emitting diode element, an electroluminescent element, a cold cathode fluorescent light-emitting element, or other types of light-emitting elements.

In a specific embodiment, the carrier plate may be formed of a metal or a conductive polymer material.

In one embodiment, the carrier comprises a flexible substrate and a cover a metal film on the flexible substrate. The metal film provides the upper surface of the carrier.

In one embodiment, the outer diameter of the filling hole of each of the via electrodes ranges from 50 to 500 μm.

Different from the prior art, the detection system according to the present invention includes quantitative detection, which can eliminate the component incomplete filling of the abnormal hole in the manufacturing process of the MWT-based solar cell, and can shorten the detection time of the through-hole electrode, thereby assisting Mass production quickly adjusts process parameters. Further, the detection system and the detection method according to the present invention can also detect the conduction state of the via electrodes of various types of semiconductor elements.

The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.

1‧‧‧Detection system

10‧‧‧ Carrier Board

102‧‧‧ upper surface

104‧‧‧Soft substrate

106‧‧‧Metal film

12‧‧‧ probe device

122‧‧‧Probe

124‧‧‧ containment board

14‧‧‧Display device

142‧‧‧Display unit

144‧‧‧Lighting elements

16‧‧‧Power supply

1222‧‧‧ casing

1224‧‧ Spring

1226‧‧‧ movable stick

2‧‧‧Semiconductor components

22‧‧‧through hole electrode

24‧‧‧ first surface

26‧‧‧ second surface

1 is a block diagram showing the architecture of a detection system in accordance with a preferred embodiment of the present invention.

Figure 2 is a view showing the unfolded and assembled view of the probe of the present invention.

Figure 3 is a partial cross-sectional view of one embodiment of a carrier of the present invention.

Fig. 4 is a photograph of the results of the detection of the wafers by the conventional EL detection method and the detection system of the present invention.

Please refer to FIG. 1. FIG. 1 is a schematic diagram showing the architecture of a detection system 1 according to a preferred embodiment of the present invention. A partial cross-sectional view of the semiconductor component 2 under test is also shown in FIG.

1, a detection according to a preferred embodiment of the present invention The system 1 is for detecting the conduction state of the M through-hole electrodes 22 of the semiconductor element 2, wherein M is a natural number. Each via electrode 22 extends from the first surface 24 of the semiconductor component 2 to the second surface 26 of the semiconductor component.

In one embodiment, the semiconductor component 2 can be an MWT germanium based solar cell or other types of semiconductor components. Taking the MWT germanium-based solar cell as an example, the well-made via electrode 22 of the semiconductor element 2, in addition to filling the through hole, also extends beyond the first surface 24 and the second surface 26 of the semiconductor component 2, respectively. Further, the via electrodes 22 on the semiconductor element 2 are arranged in an array. In FIG. 1, only two via electrodes 22 are shown as a representative.

The detection system 1 according to the present invention includes a carrier 10, a probe device 12, a display device 14, and a power source 16.

The carrier 10 is at least electrically conductive to its upper surface 102. The semiconductor component 2 is placed on the upper surface 102 of the carrier 10.

The probe device 12 includes M probes 122. Each probe 122 corresponds to one via electrode 22. In Figure 1, only two probes 122 are shown as representative.

In one embodiment, as shown in FIG. 2, the probe 122 is comprised of a sleeve 1222, a spring 1224, and a movable rod 1226. The spring 1224 acts as a buffer when the probe 122 is in contact with the via electrode 22. The movable bar 1226 includes a portion that is partially mounted within the sleeve 1222 and partially exposed.

The display device 14 includes M display units 142. Each display unit 142 corresponds to a probe 122 and is electrically connected in series to the root probe 122.

The power source 16 is electrically connected to the display device 14 and the carrier 10, respectively. The power source 16 is for supplying power to the display device 14, the probe device 12, and the carrier 10. In FIG. 1, only two display units 142 are shown as representative.

When the probe device 12 is actuated, each probe 122 is contacted When the via electrodes 22 are corresponding, each display unit 142 selectively displays a light or a signal to indicate the conduction state of its corresponding via electrode 22. That is to say, the voltage applied to each of the display unit 142 and its corresponding probe 122, its corresponding via electrode 22 and the carrier 10 constitutes a circuit higher than the driving voltage of the display unit 142, and the display unit 142 displays A light or a signal indicates that the impedance of the corresponding via electrode 22 is lower than the threshold value, that is, its conductivity is good. Thereby, the detection system according to the invention comprises a quantitative detection that can be made.

In one embodiment, the probe device 12 includes a receiving plate 124. The receiving plate 124 is for receiving and supporting the M probes 122. In practical applications, the probe device 12 can be operatively secured to a press (not shown in Figure 1). By the power of the press, the probe device 12 is actuated during the test so that each probe 122 contacts its corresponding via electrode 22, and each probe 122 has its corresponding through-hole electrode after the detection is completed. 22 separation.

The detecting method according to a preferred embodiment of the present invention is for detecting the conduction state of the M through-hole electrodes 22 of the semiconductor element 2, wherein M is a natural number. Each via electrode 22 extends from the first surface 24 of the semiconductor component 2 to the second surface 26 of the semiconductor component.

First, the test method according to the present invention provides the carrier 10 . The carrier 10 is at least electrically conductive to its upper surface 102. The semiconductor component 2 is placed on the upper surface 102 of the carrier 10.

Next, the M probe 122 is provided in accordance with the detection method of the present invention. Each probe 122 corresponds to one via electrode 22. Next, the detection method according to the present invention provides M display units 142. Each display unit 142 corresponds to a probe 122 and is electrically connected in series to the root probe 122.

Next, according to the detection method of the present invention, each display unit 142 and its corresponding probe 122, its corresponding via electrode 22, and carrier 10 are looped and supplied with electric power.

Finally, the detecting method according to the present invention selectively displays a light or a signal by each display unit 142, indicating the conductive state of the corresponding via electrode 22 of each display unit 142.

In one embodiment, the M display units 142 constitute the display device 14. Display device 14 can be a liquid crystal display, an organic light emitting diode display, a semiconductor light emitting diode display, or other type of display device.

In one embodiment, each display unit 142 is comprised of at least one light emitting element 144. In Figure 1, as a representative. Each display unit 142 is composed of one light emitting element 144. Each of the light-emitting elements 144 may be a semiconductor light-emitting diode element, an organic light-emitting diode element, an electroluminescent element, a cold cathode fluorescent light-emitting element, or other types of light-emitting elements.

In one embodiment, the carrier 10 can be formed of a metal or conductive polymer material.

In one embodiment, as shown in FIG. 3, the carrier 10 includes a flexible substrate 104 and a metal film 106 coated on the flexible substrate 104. Metal film 106 provides upper surface 102 of carrier 10.

In one embodiment, the outer diameter of the filled hole of each of the via electrodes 22, that is, the aperture of the original through hole ranges from 50 to 500 μm.

The results of the via-hole conduction detection of the standard semiconductor element, the comparison semiconductor element A, the comparison semiconductor element B, and the comparison semiconductor element C will be listed below. These semiconductor elements are all MWT germanium-based solar cells, and are tested by a conventional EL detection method and the detection system of the present invention, and the detection results are shown in FIG. Here, each display unit in the detection system of the present invention is constituted by one light-emitting element. In Fig. 4, the photo on the left side of the column is a top view of all the semiconductor elements, and the positions of the via electrodes in which all of the semiconductor elements are actually turned on are indicated by circles. All through-hole electrodes of the standard semiconductor device are well-conducted, and the semiconductor element A, the comparison semiconductor element B, and the pair are Each of the semiconductor elements C has a via electrode having poor conduction. The photograph of the middle column shows the result of the EL detection, and it is impossible to confirm whether or not all of the semiconductor elements have via electrodes having poor conduction, and the position of the via electrodes having poor conduction is confirmed. The photograph on the right side of the column shows the result of the detection by the detection system of the present invention, and it can be confirmed that all the via electrodes of the standard semiconductor element are well-conducted, and the through-hole electrodes having poor conduction are controlled by the comparison semiconductor element A, the comparison semiconductor element B, and the comparison semiconductor element C. The position of the via electrode which is poorly turned on can be confirmed (marked by an arrow in FIG. 4).

Based on the above detailed description of the present invention, it can be clearly understood that the detection system according to the present invention includes quantitative detection, and the screening of the defective wafer can be shortened in the MMW-based solar cell manufacturing process. The through-hole electrode detects the time, thereby assisting the mass production to quickly adjust the process parameters. Further, the detection system and the detection method according to the present invention can also detect the conduction state of the via electrodes of various types of semiconductor elements.

The features and spirit of the present invention are intended to be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents that are within the scope of the invention as claimed. Therefore, the scope of the patent application of the present invention should be construed broadly in the light of the above description, so that it covers all possible changes and arrangements.

Claims (12)

A detection system for detecting an on state of M through-hole electrodes of a semiconductor component, each via electrode extending from a first surface of the semiconductor component to a second surface, M being a natural number, the detecting The system comprises: a carrier board having at least one upper surface thereof electrically conductive, the semiconductor component being disposed on the upper surface of the carrier; a probe device comprising M probes, each probe Corresponding to a through-hole electrode; a display device comprising M display units, each display unit corresponding to a probe and electrically connected in series to the probe; and a power source electrically connected to the display device and the load a board for supplying a power to the display device, the probe device, and the carrier; wherein each display unit is selected when the probe device is actuated to contact each probe with its corresponding via electrode A light is displayed to indicate the conduction state of its corresponding via electrode. The detection system of claim 1, wherein the display device is selected from the group consisting of a liquid crystal display, an organic light emitting diode display, and a semiconductor light emitting diode display. The detection system of claim 1, wherein each of the display units is composed of at least one light-emitting element, each of the light-emitting elements being selected from a semiconductor light-emitting diode element, an organic light-emitting diode element, and an electro-optical element. One of a group consisting of a light-emitting element and a cold cathode fluorescent light-emitting element. The detection system of claim 1, wherein the carrier is formed of a metal or a conductive polymer material. The detection system of claim 1, wherein the carrier comprises a flexible substrate and a metal film coated on the flexible substrate, the metal film providing the upper surface. The detecting system according to claim 1, wherein one of the through hole electrodes has a hole outer diameter ranging from 50 to 500 μm. A detecting method for detecting a conduction state of M through-hole electrodes of a semiconductor component, each through-hole electrode extending from a first surface of the semiconductor component to a second surface, M being a natural number, the detecting The method comprises the steps of: providing a carrier board having at least one of its upper surfaces electrically conductive, the semiconductor component being disposed on the upper surface of the carrier; providing M probes, one for each probe a via electrode; providing M display units, each of which corresponds to a probe and electrically connected in series to the probe; each display unit and its corresponding probe, its corresponding via electrode, and the carrier Forming a loop and providing a power; and selectively emitting a light by each display unit to indicate the conduction state of the corresponding via electrode of each display unit. The detection method of claim 7, wherein the M display units comprise a display device, wherein the display device is selected from the group consisting of a liquid crystal display, an organic light emitting diode display, and a semiconductor light emitting diode display. One of the groups. The detecting method of claim 7, wherein each of the display units is composed of at least one light emitting element, each of the light emitting elements being selected from a semiconductor One of a group consisting of a light emitting diode element, an organic light emitting diode element, an electroluminescent element, and a cold cathode fluorescent light emitting element. The method of detecting according to claim 7, wherein the carrier is formed of a metal or a conductive polymer material. The method of claim 7, wherein the carrier comprises a flexible substrate and a metal film coated on the flexible substrate, the metal film providing the upper surface. The detecting method according to claim 7, wherein one of the through hole electrodes has a hole outer diameter ranging from 50 to 500 μm.