TWI633677B - Metallization of solar cells using metal foils - Google Patents
Metallization of solar cells using metal foils Download PDFInfo
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- TWI633677B TWI633677B TW103132752A TW103132752A TWI633677B TW I633677 B TWI633677 B TW I633677B TW 103132752 A TW103132752 A TW 103132752A TW 103132752 A TW103132752 A TW 103132752A TW I633677 B TWI633677 B TW I633677B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 271
- 239000002184 metal Substances 0.000 title claims abstract description 271
- 239000011888 foil Substances 0.000 title claims abstract description 133
- 238000001465 metallisation Methods 0.000 title description 4
- 125000006850 spacer group Chemical group 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims description 48
- 238000000059 patterning Methods 0.000 claims description 21
- 238000003466 welding Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
一種太陽能電池結構包含P型摻雜區域及N型摻雜區域。介電質間隔物形成在太陽能電池結構的表面上。金屬層形成在介電質間隔物及由介電質間隔物露出的太陽能電池結構的表面上。金屬箔放置在金屬層上。使用雷射光束焊接金屬箔至金屬層。也使用雷射光束圖案化金屬箔。雷射光束剝蝕在介電質間隔物上的金屬箔及金屬層部分。金屬箔的雷射剝蝕切割金屬箔成分離的P型金屬指及N型金屬指。 A solar cell structure includes P-type doped regions and N-type doped regions. Dielectric spacers are formed on the surface of the solar cell structure. The metal layer is formed on the surface of the dielectric spacer and the solar cell structure exposed by the dielectric spacer. The metal foil is placed on the metal layer. Use a laser beam to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam erodes the metal foil and metal layer on the dielectric spacer. Laser ablation of metal foil cuts the metal foil into separate P-type metal fingers and N-type metal fingers.
Description
在本文中所描述的專利標的(subject matter)之實施例通常關於一種太陽能電池。更具體地,專利標的之實施例係關於一種太陽能電池製備製程及結構。 The embodiments of the patent subject matter described herein generally relate to a solar cell. More specifically, the embodiments of the patent subject matter relate to a manufacturing process and structure of a solar cell.
太陽能電池為習知用於轉化太陽能輻射至電能的裝置。太陽能電池具有在正常操作期間面向太陽以收集太陽能輻射的正面以及相反於正面的背面。衝射(impinging)在太陽能電池上的太陽能輻射產生了可利用以供電給外部電路之電荷,如負載(load)。外部電路可通過連接至太陽能電池的摻雜區域的金屬指接收來自太陽能電池的電流。 Solar cells are conventional devices used to convert solar radiation into electrical energy. The solar cell has a front side facing the sun to collect solar radiation during normal operation and a back side opposite to the front side. The solar radiation impinging on the solar cell generates a charge that can be used to power an external circuit, such as a load. The external circuit may receive current from the solar cell through a metal finger connected to the doped region of the solar cell.
在本發明的一實施態樣中,揭露一種製備太陽能電池之方法。該方法包含:在太陽能電池結構的表面上形成介電質間隔物;在介電質間隔物、N型摻雜區域及P型摻雜區域上形成金屬層,其中金屬層電性連接N型摻雜區域至P型摻雜區域;在金屬 層上放置金屬箔;以及在金屬層上放置金屬箔之後,圖案化金屬箔,其中圖案化金屬箔包含移除在介電質間隔物上的金屬箔及金屬層之部分。 In one embodiment of the present invention, a method for preparing a solar cell is disclosed. The method includes: forming a dielectric spacer on the surface of the solar cell structure; forming a metal layer on the dielectric spacer, the N-type doped region and the P-type doped region, wherein the metal layer is electrically connected to the N-type Doped region to P-type doped region; in metal Metal foil is placed on the layer; and after the metal foil is placed on the metal layer, the metal foil is patterned, wherein the patterned metal foil includes a portion of the metal foil and the metal layer removed on the dielectric spacer.
在本發明的又一實施態樣中,揭露一種太陽能電池結構。該太陽能電池結構包含N型摻雜區域及P型摻雜區域;位在N型摻雜區域及P型摻雜區域上之介電質間隔物;在介電質間隔物及N型摻雜區域上的第一金屬層,其中第一金屬層係電性連接至N型摻雜區域;在介電質間隔物及P型摻雜區域上的第二金屬層,其中第二金屬層係電性連接至P型摻雜區域;電性接合至第一金屬層之第一金屬箔指;以及電性接合至第二金屬層之第二金屬箔指。 In yet another embodiment of the present invention, a solar cell structure is disclosed. The solar cell structure includes N-type doped regions and P-type doped regions; dielectric spacers located on N-type doped regions and P-type doped regions; On the first metal layer, wherein the first metal layer is electrically connected to the N-type doped region; the second metal layer on the dielectric spacer and the P-type doped region, wherein the second metal layer is electrically Connected to the P-type doped region; first metal foil fingers electrically bonded to the first metal layer; and second metal foil fingers electrically bonded to the second metal layer.
在本發明的再一實施態樣中,揭露一種製備太陽能電池的方法。該方法包含在太陽能電池結構的表面上形成介電質間隔物;在由介電質間隔物露出的太陽能電池結構的表面的部分上沉積金屬層;安裝金屬箔至金屬層;以及在安裝金屬箔至金屬層之後圖案化金屬箔。 In still another embodiment of the present invention, a method for preparing a solar cell is disclosed. The method includes forming a dielectric spacer on the surface of the solar cell structure; depositing a metal layer on a portion of the surface of the solar cell structure exposed by the dielectric spacer; mounting the metal foil to the metal layer; and mounting the metal foil After the metal layer, the metal foil is patterned.
在一實施例中,介電質間隔物形成在太陽能電池結構的表面上。金屬層形成在介電質間隔物上且在由介電質間隔物露出的太陽能電池結構的表面上。金屬箔放置在金屬層上。使用雷射光束焊接金屬箔至金屬層。也使用雷射光束圖案化金屬箔。雷射光束剝蝕(ablate)在介電質間隔物上的金屬箔及金屬層之部分。金屬箔的雷射剝蝕切割金屬箔成分離的P型金屬指及N型金屬指。 In one embodiment, dielectric spacers are formed on the surface of the solar cell structure. The metal layer is formed on the dielectric spacer and on the surface of the solar cell structure exposed by the dielectric spacer. The metal foil is placed on the metal layer. Use a laser beam to weld the metal foil to the metal layer. A laser beam is also used to pattern the metal foil. The laser beam ablate parts of the metal foil and metal layer on the dielectric spacer. Laser ablation of metal foil cuts the metal foil into separate P-type metal fingers and N-type metal fingers.
對所屬技術領域具有通常知識者而言本揭露的這些及其他特徵藉由參閱其中包含附圖及申請專利範圍的本揭露全文將 更容易地顯而易見。 These and other features of the present disclosure to those of ordinary skill in the art by referring to the full text of the present disclosure, which includes drawings and patent application scope, It's easier to see.
100‧‧‧太陽能電池結構 100‧‧‧Solar battery structure
101‧‧‧太陽能電池基板 101‧‧‧Solar cell substrate
103‧‧‧介電質間隔物 103‧‧‧Dielectric spacer
104‧‧‧金屬層 104‧‧‧Metal layer
105、105A‧‧‧金屬箔 105、105A‧‧‧Metal foil
106‧‧‧焊接接點 106‧‧‧welding contact
107‧‧‧切割 107‧‧‧Cutting
108、109‧‧‧金屬指 108, 109‧‧‧ metal finger
201、202、203、204、205‧‧‧步驟 201, 202, 203, 204, 205‧‧‧ steps
當考量搭配下列圖式時,經由參照詳細描述及申請專利範圍可衍生專利標的之更完整的理解,其中在整個圖式中相同參考符號代表相似元件。圖式不按照比例繪製。 When considering the following drawings, a more complete understanding of the patentable subject matter can be derived by referring to the detailed description and the scope of the patent application, wherein the same reference symbols represent similar elements throughout the drawings. The drawing is not to scale.
第1圖至第7圖為示意性地繪示根據本揭露的實施例製備太陽能電池的方法的截面圖。 FIGS. 1 to 7 are cross-sectional views schematically illustrating a method of manufacturing a solar cell according to an embodiment of the present disclosure.
第8圖為根據本揭露的實施例的未圖案化金屬箔的平面圖。 FIG. 8 is a plan view of an unpatterned metal foil according to an embodiment of the present disclosure.
第9圖為在根據本揭露的實施例的圖案化之後的第8圖的金屬箔的平面圖。 FIG. 9 is a plan view of the metal foil of FIG. 8 after patterning according to an embodiment of the present disclosure.
第10圖為根據本揭露的實施例製備太陽能電池的方法之流程圖。 FIG. 10 is a flowchart of a method of manufacturing a solar cell according to an embodiment of the present disclosure.
第11圖及第12圖為示意性地繪示根據本揭露的實施例以模組層級(module level)的金屬箔的圖案化的截面圖。 FIG. 11 and FIG. 12 are schematic cross-sectional views schematically showing a patterned metal foil at a module level according to an embodiment of the present disclosure.
第13圖及第14圖為示意性地繪示根據本揭露的實施例具圖案化金屬層的金屬箔的使用的截面圖。 13 and 14 are cross-sectional views schematically illustrating the use of a metal foil with a patterned metal layer according to an embodiment of the present disclosure.
下列詳細描述在本質上僅為說明性的且非旨在限制專利標的之實施例或這樣的實施例的申請及使用。如在本文中所使用的,文字「例示性的(exemplary)」表示「作為一個示例(example)、 實例(instance)或說明(illustration)」。在本文中所描述的作為例示性的任何實施方式不需要被詮釋為較佳於或優於其他實施方式。此外,沒有意圖以在先前技術領域、背景、發明內容或下列實施方式提出的任何明示或暗示的理論所限制。 The following detailed description is merely illustrative in nature and is not intended to limit the patented embodiments or the application and use of such embodiments. As used in this article, the text "exemplary" means "as an example, Instance (instance) or illustration (illustration) ". Any exemplary embodiments described herein need not be interpreted as being better or better than other embodiments. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, summary or the following embodiments.
此說明書包含參照「一個實施例(one embodiment)」或「一實施例(an embodiment)」。片語「在一個實施例(in one embodiment)」或「在一實施例(in an embodiment)」的表述不必然表示相同實施例。特別的特徵、結構或特性可以任何與本揭露相符的合適方式結合。 This specification includes references to "one embodiment" or "an embodiment." The expression "in one embodiment" or "in an embodiment" does not necessarily mean the same embodiment. Special features, structures, or characteristics may be combined in any suitable manner consistent with the present disclosure.
在本揭露中,提供了許多特定細節,如結構及方法的實施例,以提供實施例的徹底理解。然而,所屬技術領域具有通常知識者將認知的是,實施例可在不具一或多個特定細節下實現。在其他實例中,不示出或描述習知的細節,以避免模糊了實施例的態樣。 In this disclosure, many specific details are provided, such as structure and method embodiments, to provide a thorough understanding of the embodiments. However, those of ordinary skill in the art will recognize that embodiments can be implemented without one or more specific details. In other instances, conventional details are not shown or described to avoid obscuring the appearance of the embodiments.
第1圖至第7圖為示意性地繪示根據本揭露的實施例製備太陽能電池的方法的截面圖。所製備之太陽能電池為全背面接觸太陽能電池(all back contact solar cell),其中N型摻雜區域及P型摻雜區域以及耦合至N型摻雜區域及P型摻雜區域的金屬指為在太陽能電池的背面上。 FIGS. 1 to 7 are cross-sectional views schematically illustrating a method of manufacturing a solar cell according to an embodiment of the present disclosure. The prepared solar cell is an all back contact solar cell, wherein the N-type doped region and the P-type doped region and the metal coupled to the N-type doped region and the P-type doped region refer to On the back of the solar cell.
首先參照第1圖,示出了根據本揭露的實施例的太陽能電池結構100。在第1圖的實施例中,太陽能電池結構100包含可形成在太陽能電池基板101內或太陽能電池基板101外的交替之複數個N型摻雜區域及P型摻雜區域。例如,N型摻雜區域及P型摻雜區域可藉由分別擴散N型摻雜物及P型摻雜物至太陽能 電池基板101而形成。在另一實施例中,N型摻雜區域及P型摻雜區域形成在材料,如在太陽能電池基板101上形成的多晶矽的另外層(separate layer)中。在該實施例中,N型摻雜物及P型摻雜物擴散至多晶矽(其可為或可不為溝槽式(trench))以在多晶矽而非在太陽能電池基板101中形成N型摻雜區域及P型摻雜區域。太陽能電池基板101可包含例如單晶矽晶圓(monocrystalline silicon wafer)。 Referring first to FIG. 1, a solar cell structure 100 according to an embodiment of the present disclosure is shown. In the embodiment of FIG. 1, the solar cell structure 100 includes a plurality of alternating N-type doped regions and P-type doped regions that can be formed in the solar cell substrate 101 or outside the solar cell substrate 101. For example, the N-type doped region and the P-type doped region can be diffused into the solar energy by N-type dopant and P-type dopant, respectively. The battery substrate 101 is formed. In another embodiment, the N-type doped region and the P-type doped region are formed in a separate layer of material such as polysilicon formed on the solar cell substrate 101. In this embodiment, N-type dopants and P-type dopants are diffused into polysilicon (which may or may not be trench) to form N-type doping in polysilicon rather than in solar cell substrate 101 Region and P-type doped region. The solar cell substrate 101 may include, for example, a monocrystalline silicon wafer.
在第1圖的實施例中,標號「N」及「P」示意性地代表N型摻雜區域及P型摻雜區域或電性連接至N型摻雜區域及P型摻雜區域。更特別地,標號「N」示意性地代表露出的N型摻雜區域或至N型摻雜區域之露出的金屬連接。類似地,標號「P」示意性地代表露出的P型摻雜區域或至P型摻雜區域之露出的金屬連接。太陽能電池結構100可因此代表在聯至N型摻雜區域及P型摻雜區域之接觸孔形成之後,但在用以形成聯至N型摻雜區域及P型摻雜區域的金屬接觸指之金屬化製程(metallization process)之前所製備的太陽能電池的結構。 In the embodiment of FIG. 1, the symbols “N” and “P” schematically represent N-type doped regions and P-type doped regions or are electrically connected to the N-type doped regions and the P-type doped regions. More specifically, the reference "N" schematically represents the exposed N-type doped region or the exposed metal connection to the N-type doped region. Similarly, the reference "P" schematically represents the exposed P-type doped region or the exposed metal connection to the P-type doped region. The solar cell structure 100 may therefore represent after the formation of the contact holes connected to the N-type doped region and the P-type doped region, but the metal contact used to form the N-type doped region and the P-type doped region The structure of the solar cell prepared before the metallization process.
在第1圖的實施例中,N型摻雜區域及P型摻雜區域在太陽能電池結構100的背面上。太陽能電池結構100的背面相反於直接朝向太陽以在正常操作期間收集太陽能輻射的正面。 In the embodiment of FIG. 1, the N-type doped region and the P-type doped region are on the back of the solar cell structure 100. The back side of the solar cell structure 100 is opposite to the front side directly facing the sun to collect solar radiation during normal operation.
其次參照第2圖,複數個介電質間隔物103形成在太陽能電池結構100的表面上。在第2圖的實施例中,介電質間隔物103形成在於相鄰的P型摻雜區域及N型摻雜區域之間的界面上的太陽能電池結構100的表面上的區域上。如同可理解的,介電質間隔物103也可根據太陽能電池結構100的詳細情況而形成在其他區域上。 Next, referring to FIG. 2, a plurality of dielectric spacers 103 are formed on the surface of the solar cell structure 100. In the embodiment of FIG. 2, the dielectric spacer 103 is formed on a region on the surface of the solar cell structure 100 on the interface between adjacent P-type doped regions and N-type doped regions. As can be understood, the dielectric spacer 103 may also be formed on other regions according to the details of the solar cell structure 100.
在一實施例中,介電質間隔物103藉由網版印刷印刷在太陽能電池結構100上。介電質間隔物103也可使用其他介電質形成製程來形成,包含藉由旋轉塗佈及藉由沉積(例如,化學氣相沉積)接續圖案化(例如,遮罩(masking)及蝕刻)。介電質間隔物103可包含具光能吸收器(optical absorber)、可燒結介電質(fireable dieletric)等的介電質材料。作為特定實施例,介電質間隔物103可包含網版印刷在太陽能電池結構100上成1-10微米厚度的聚亞醯胺(例如,具氧化鈦濾光片(titanium oxide filter))。一般而言,介電質間隔物103可配置以具有將阻擋(例如,藉由吸收或反射)在金屬箔105的圖案化中所使用的雷射光束的厚度及組成(參見第5圖),且與使用的製程相容以形成重疊金屬層(例如,第3圖,金屬層104)。 In one embodiment, the dielectric spacer 103 is printed on the solar cell structure 100 by screen printing. The dielectric spacer 103 can also be formed using other dielectric forming processes, including by spin coating and by deposition (eg, chemical vapor deposition) followed by patterning (eg, masking and etching) . The dielectric spacer 103 may include a dielectric material with an optical absorber, a fireable dieletric, and the like. As a specific example, the dielectric spacer 103 may include polyimide (eg, with a titanium oxide filter) screen-printed on the solar cell structure 100 to a thickness of 1-10 microns. In general, the dielectric spacer 103 may be configured to have a thickness and composition that will block (for example, by absorption or reflection) the laser beam used in the patterning of the metal foil 105 (see FIG. 5), It is compatible with the process used to form an overlapping metal layer (eg, metal layer 104 in FIG. 3).
在第2圖的實施例中,各介電質間隔物103形成在太陽能電池結構100的N型摻雜區域及P型摻雜區域上。如同下面更顯而易見的是,在隨後的金屬化製程中,在金屬箔在太陽能電池結構100上時金屬箔係使用雷射圖案化。介電質間隔物103在金屬箔105的圖案化期間有利地阻擋可穿透至太陽能電池結構100的雷射光束。 In the embodiment of FIG. 2, each dielectric spacer 103 is formed on the N-type doped region and the P-type doped region of the solar cell structure 100. As is more obvious below, in the subsequent metallization process, the metal foil is patterned using laser when the metal foil is on the solar cell structure 100. The dielectric spacer 103 advantageously blocks the laser beam that can penetrate into the solar cell structure 100 during the patterning of the metal foil 105.
如同在第3圖所示出的,金屬層104形成在太陽能電池結構100上。金屬層104提供電性連接至N型摻雜區域及P型摻雜區域以隨後形成金屬指。在一實施例中,金屬層104包含在介電質間隔物103上共形的(conformal)連續覆蓋金屬塗層(continuous blanket metal coating)。例如,金屬層104可包含藉由濺鍍、沉積或一些其他製程形成在介電質間隔物103、N型摻雜區域及P型摻雜區域上成10埃(Angstrom)至5微米(例如,0.3微 米至1微米)之厚度的鋁。一般而言,金屬層104包含可接合至金屬箔105的材料。例如,金屬層104可包含鋁以促進焊接至鋁金屬箔105。在第3圖中金屬層104仍然電性連接N型摻雜區域至P型摻雜區域。金屬層104隨後在金屬箔105的圖案化期間圖案化以從P型摻雜區域分離N型摻雜區域。 As shown in FIG. 3, the metal layer 104 is formed on the solar cell structure 100. The metal layer 104 provides electrical connection to the N-type doped region and the P-type doped region to subsequently form metal fingers. In one embodiment, the metal layer 104 includes a conformal continuous blanket metal coating on the dielectric spacer 103. For example, the metal layer 104 may be formed on the dielectric spacer 103, the N-type doped region, and the P-type doped region by sputtering, deposition, or some other process to form 10 Angstroms to 5 microns (eg, 0.3 micro Meters to 1 micron) of aluminum. In general, the metal layer 104 includes a material that can be bonded to the metal foil 105. For example, the metal layer 104 may include aluminum to facilitate welding to the aluminum metal foil 105. In FIG. 3, the metal layer 104 is still electrically connected to the N-type doped region to the P-type doped region. The metal layer 104 is then patterned during the patterning of the metal foil 105 to separate the N-type doped regions from the P-type doped regions.
其次參照第4圖,金屬箔105大致地位在太陽能電池結構100之上。金屬箔105為「金屬箔」,其中包含了預先製備的金屬薄板。第8圖為在製備製程的此階段的金屬箔105的平面圖。如同在第8圖所示出的,金屬箔105未圖案化。如同下面將更顯而易見的,在金屬箔105安裝至金屬層104之後金屬箔105隨後圖案化以形成太陽能電池的金屬指。 Referring next to FIG. 4, the metal foil 105 is roughly placed on the solar cell structure 100. The metal foil 105 is a "metal foil", which contains a metal sheet prepared in advance. FIG. 8 is a plan view of the metal foil 105 at this stage of the manufacturing process. As shown in Fig. 8, the metal foil 105 is not patterned. As will be more apparent below, after the metal foil 105 is mounted to the metal layer 104, the metal foil 105 is subsequently patterned to form the metal fingers of the solar cell.
接著在第5圖中,金屬箔105放置在太陽能電池結構100上。不像沉積或塗佈在太陽能電池結構100上的金屬,金屬箔105為預先製備的板。在一實施例,金屬箔105包含鋁板。金屬箔105在其中其未形成在太陽能電池結構100上處放置在太陽能電池結構100上。在一實施例,金屬箔105為藉由安裝至金屬層104而放置在太陽能電池結構100上。安裝過程可包含擠壓金屬箔105至金屬層104以使金屬箔105得以與金屬層104密切接觸。安裝過程可導致金屬箔105在金屬層104的特徵(例如,凸塊(bump))上為共形的。可使用真空對著金屬層104擠壓金屬箔105,以在焊接期間於其間得到小於10微米的間隙。也可在焊接期間使用壓板對著金屬層104擠壓金屬箔105;為了雷射剝蝕而移除壓板。 Next, in FIG. 5, the metal foil 105 is placed on the solar cell structure 100. Unlike the metal deposited or coated on the solar cell structure 100, the metal foil 105 is a plate prepared in advance. In one embodiment, the metal foil 105 includes an aluminum plate. The metal foil 105 is placed on the solar cell structure 100 where it is not formed on the solar cell structure 100. In one embodiment, the metal foil 105 is placed on the solar cell structure 100 by being mounted to the metal layer 104. The installation process may include squeezing the metal foil 105 to the metal layer 104 so that the metal foil 105 is in close contact with the metal layer 104. The installation process may cause the metal foil 105 to be conformal on the features (eg, bumps) of the metal layer 104. A vacuum may be used to squeeze the metal foil 105 against the metal layer 104 to obtain a gap of less than 10 microns between them during welding. It is also possible to press the metal foil 105 against the metal layer 104 using a pressing plate during welding; the pressing plate is removed for laser ablation.
第6圖示出在金屬箔105電性接合至金屬層104之後的太陽能電池結構100。在第6圖的實施例中,在金屬箔105對著金屬層104擠壓時金屬箔105藉由導向雷射光束在金屬箔105上 而焊接至金屬層104。雷射焊接製程產生電性接合金屬箔105至金屬層104的焊接接點106。因為金屬箔105在製備製程的此階段為未圖案化,故金屬箔105仍然電性連接太陽能電池結構100的N型摻雜區域及P型摻雜區域。 FIG. 6 shows the solar cell structure 100 after the metal foil 105 is electrically bonded to the metal layer 104. In the embodiment of FIG. 6, when the metal foil 105 is pressed against the metal layer 104, the metal foil 105 is directed onto the metal foil 105 by the guided laser beam While welding to the metal layer 104. The laser welding process produces solder joints 106 that electrically connect the metal foil 105 to the metal layer 104. Because the metal foil 105 is not patterned at this stage of the manufacturing process, the metal foil 105 is still electrically connected to the N-type doped region and the P-type doped region of the solar cell structure 100.
接著在第7圖中,金屬箔105係圖案化以形成金屬指108及金屬指109。在一實施例中,金屬箔105藉由剝蝕在介電質間隔物103上的金屬箔105及金屬層104的部分而圖案化。金屬箔105及金屬層104可使用雷射光束剝蝕。雷射剝蝕製程可切割(參見107)金屬箔105成至少兩個分離片段(piece),有一片段為電性連接至N型摻雜區域的金屬指108且另一片段為電性連接至P型摻雜區域的金屬指109。雷射剝蝕製程截斷了N型摻雜區域及P型摻雜區域通過金屬層104及金屬箔105的電性連接。金屬箔105及金屬層104係因此在相同步驟圖案化,有利地減少製備成本。 Next in FIG. 7, the metal foil 105 is patterned to form metal fingers 108 and metal fingers 109. In one embodiment, the metal foil 105 is patterned by ablating portions of the metal foil 105 and the metal layer 104 on the dielectric spacer 103. The metal foil 105 and the metal layer 104 can be ablated using a laser beam. The laser ablation process can cut (see 107) the metal foil 105 into at least two separate pieces, one piece is a metal finger 108 electrically connected to the N-type doped region and the other piece is electrically connected to the P-type The metal finger 109 of the doped region. The laser ablation process interrupts the electrical connection between the N-type doped region and the P-type doped region through the metal layer 104 and the metal foil 105. The metal foil 105 and the metal layer 104 are thus patterned in the same step, which advantageously reduces the manufacturing cost.
第9圖為根據本揭露的實施例的第7圖的圖案化金屬箔105的平面圖。第9圖示出切割107物理性地從金屬指109分離金屬指108。在第9圖的實施例中,金屬箔105係圖案化以形成交指型(interdigitated)金屬指108及交指型金屬指109。也可根據太陽能電池使用其他金屬指圖案(design)。 FIG. 9 is a plan view of the patterned metal foil 105 of FIG. 7 according to an embodiment of the present disclosure. FIG. 9 shows that the cutting 107 physically separates the metal finger 108 from the metal finger 109. In the embodiment of FIG. 9, the metal foil 105 is patterned to form interdigitated metal fingers 108 and interdigitated metal fingers 109. Other metal finger designs can also be used depending on the solar cell.
回到第7圖,雷射剝蝕製程使用逐步切割金屬箔105及金屬層104的雷射光束。根據雷射剝蝕製程的製程窗口(process window),雷射光束也可切割其部分,但不通過介電質間隔物103。介電質間隔物103有利地阻擋可以其他方式達到且損壞太陽能電池結構100的雷射光束。介電質間隔物103也有利地保護太陽能電池結構100免於機械性損壞(mechanical damage),如在金屬箔105至金屬層104的安裝期間。介電質間隔物103在完成 的太陽能電池中可留下,所以其使用不需要涉及在金屬箔105的圖案化之後添加的移除步驟。 Returning to FIG. 7, the laser ablation process uses a laser beam that gradually cuts the metal foil 105 and the metal layer 104. According to the process window of the laser ablation process, the laser beam can also cut its part, but does not pass through the dielectric spacer 103. The dielectric spacer 103 advantageously blocks the laser beam that can be reached and damages the solar cell structure 100 in other ways. The dielectric spacer 103 also advantageously protects the solar cell structure 100 from mechanical damage, such as during the installation of the metal foil 105 to the metal layer 104. Dielectric spacer 103 is completing Can be left in the solar cell, so its use does not need to involve a removal step added after the patterning of the metal foil 105.
鑑於前述,所屬技術領域具有通常知識者將理解的是,本揭露的實施例提供迄今為止未實現的額外益處。金屬箔的使用以形成金屬指相較於涉及金屬指的沉積或電鍍(plating)的金屬化製程為相對地具成本效益的。介電質間隔物103允許雷射焊接製程及雷射剝蝕製程在原位進行,即接連在相同製程平台(station)。介電質間隔物103也使雷射光束的使用能夠在金屬箔105位於太陽能電池結構100上時圖案化金屬箔105。如同能理解的,放置及對準金屬箔板相較於放置及對準金屬指的個別條帶係為更容易的,具微米尺度之精密度。不像蝕刻及其他化學根據的圖案化製程,使用雷射圖案化金屬箔105減少了可能形成在所製備的太陽能電池上的殘留物的量。 In view of the foregoing, those of ordinary skill in the art will understand that the embodiments of the present disclosure provide additional benefits that have not been realized so far. The use of metal foil to form metal fingers is relatively cost-effective compared to metallization processes that involve the deposition or plating of metal fingers. The dielectric spacer 103 allows the laser welding process and the laser ablation process to be performed in situ, that is, successively on the same process station. The dielectric spacer 103 also enables the use of laser beams to pattern the metal foil 105 when the metal foil 105 is on the solar cell structure 100. As can be understood, it is easier to place and align the metal foil plate than to place and align the individual strips of metal fingers, with precision on the micrometer scale. Unlike etching and other chemically-based patterning processes, the use of laser to pattern metal foil 105 reduces the amount of residue that may be formed on the prepared solar cell.
進一步注意的是在第9圖的實施例中,金屬層104與金屬箔105為同時地圖案化。這有利地在雷射焊接及剝蝕之前消除用以圖案化金屬層104而分離P型摻雜區域及N型摻雜區域之多餘步驟。 It is further noted that in the embodiment of FIG. 9, the metal layer 104 and the metal foil 105 are simultaneously patterned. This advantageously eliminates unnecessary steps for patterning the metal layer 104 to separate the P-type doped region and the N-type doped region before laser welding and ablation.
第10圖示出根據本揭露的實施例製備太陽能電池的方法之流程圖。第10圖的方法可在具N型摻雜區域及P型摻雜區域的太陽能電池結構上進行。第10圖的方法可在太陽能電池的製備期間以電池層級(cell level)進行或當太陽能電池與其他太陽能電池連接及封裝時以模組層級(module level)進行。注意的是在各種實施例中,第10圖的方法可包含比繪示的更多的或更少的方塊。 FIG. 10 shows a flowchart of a method of manufacturing a solar cell according to an embodiment of the present disclosure. The method of FIG. 10 can be performed on a solar cell structure having N-type doped regions and P-type doped regions. The method of FIG. 10 may be performed at the cell level during the preparation of the solar cell or at the module level when the solar cell is connected and packaged with other solar cells. Note that in various embodiments, the method of FIG. 10 may include more or fewer blocks than shown.
在第10圖的方法中,複數個介電質間隔物形成在太陽能電池結構的表面上(步驟201)。各介電質間隔物可形成在太陽能電池結構的N型摻雜區域及P型摻雜區域上。介電質間隔物可例如經由網版印刷、旋轉塗佈或由沉積及圖案化形成。金屬層在此後形成在介電質間隔物上且在介電質間隔物之間露出的太陽能電池結構的表面上(步驟202)。在一實施例中,金屬層為經由覆蓋沉積(blanket deposition)形成的連續且共形的層。金屬箔安裝至金屬層(步驟203)。在一實施例中,金屬箔使用雷射光束焊接至金屬層(步驟204)。注意的是也可進行非雷射根據的焊接技術來焊接金屬箔至金屬層。也可使用雷射光束剝蝕在介電質間隔物上的金屬箔及金屬層部分(步驟205)。雷射剝蝕製程係圖案化金屬箔成分離的金屬指,且圖案化金屬層以分離P型摻雜區域及N型摻雜區域。 In the method of FIG. 10, a plurality of dielectric spacers are formed on the surface of the solar cell structure (step 201). Each dielectric spacer may be formed on the N-type doped region and the P-type doped region of the solar cell structure. The dielectric spacer may be formed by screen printing, spin coating, or by deposition and patterning, for example. The metal layer is thereafter formed on the dielectric spacers and exposed on the surface of the solar cell structure between the dielectric spacers (step 202). In one embodiment, the metal layer is a continuous and conformal layer formed by blanket deposition. The metal foil is mounted to the metal layer (step 203). In one embodiment, the metal foil is welded to the metal layer using a laser beam (step 204). Note that non-laser based welding techniques can also be used to weld the metal foil to the metal layer. A laser beam can also be used to ablate the metal foil and metal layer portions on the dielectric spacer (step 205). The laser ablation process is to pattern the metal foil into separate metal fingers, and pattern the metal layer to separate the P-type doped region and the N-type doped region.
當所製造的太陽能電池與其他太陽能電池封裝時可以模組層級進行金屬箔105的圖案化。在該實施例中,金屬箔105可安裝至複數個太陽能電池結構100的金屬層104。這示意性地繪示在第11圖,其中金屬箔105A安裝至二或多個太陽能電池結構100的金屬層104。除了金屬箔105A跨越超過一個太陽能電池結構100以外,金屬箔105A係相同於先前討論的金屬箔105。如同在第12圖所示出的,金屬箔105A在太陽能電池結構100上時可藉由雷射剝蝕圖案化。雷射剝蝕製程可圖案化金屬箔105A成如同先前討論的金屬指108及金屬指109。在圖案化之後可切割金屬箔105A以物理性地分開太陽能電池結構100。在圖案化之後,金屬箔105A的部分也可保留在原位以將相鄰的太陽能電池結構100串在一起。 When the manufactured solar cell is packaged with other solar cells, the metal foil 105 can be patterned at the module level. In this embodiment, the metal foil 105 can be mounted to the metal layers 104 of the plurality of solar cell structures 100. This is schematically shown in FIG. 11 in which the metal foil 105A is mounted to the metal layer 104 of two or more solar cell structures 100. The metal foil 105A is the same as the metal foil 105 previously discussed except that the metal foil 105A spans more than one solar cell structure 100. As shown in FIG. 12, the metal foil 105A can be patterned by laser ablation when it is on the solar cell structure 100. The laser ablation process can pattern the metal foil 105A into metal fingers 108 and metal fingers 109 as previously discussed. After patterning, the metal foil 105A may be cut to physically separate the solar cell structure 100. After patterning, a portion of the metal foil 105A may also be left in place to string adjacent solar cell structures 100 together.
在一實施例中,金屬箔105A的雷射剝蝕保留了相鄰的 太陽能電池結構100的相反型金屬指之間的連接。這為示意性地繪示在第12圖的實施例,其中金屬箔105係圖案化,以使一個太陽能電池結構100的P型金屬指109保留連接至相鄰的太陽能電池結構100的N型金屬指108,從而電性連接串聯的太陽能電池結構100。因為金屬箔105A的圖案化可與太陽能電池結構100串結合,這有利地省下在模組層級的製備步驟。 In one embodiment, the laser ablation of the metal foil 105A retains the adjacent The connection between the opposite metal fingers of the solar cell structure 100. This is the embodiment shown schematically in FIG. 12, in which the metal foil 105 is patterned so that the P-type metal fingers 109 of one solar cell structure 100 retain the N-type metal connected to the adjacent solar cell structure 100 Refers to 108 to electrically connect the solar cell structure 100 in series. Because the patterning of the metal foil 105A can be combined with the solar cell structure 100 in series, this advantageously saves the preparation steps at the module level.
如同解釋的,金屬層104可形成作為電性連接P型摻雜區域及N型摻雜區域的金屬的覆蓋層,且在此後金屬箔105的圖案化期間圖案化以分離P型摻雜區域及N型摻雜區域。在其他實施例中,根據製備製程之詳細情況,金屬層104可在雷射焊接及剝蝕之前圖案化。這為示意性地繪示在第13圖,其中金屬層104形成在其未電性連接的P型摻雜區域及N型摻雜區域上。例如,金屬層104可藉由覆蓋沉積而沉積在介電質間隔物103、N型摻雜區域及P型摻雜區域上,且然後如同在第13圖所示出的圖案化(例如,經由遮罩及蝕刻)以從P型摻雜區域分離N型摻雜區域。如同先前描述的,金屬箔105然後可放置在圖案化的金屬層104及介電質間隔物103上,雷射焊接至金屬層104,且藉由雷射剝蝕而圖案化。第14圖示意性地示出在該實施例中的雷射剝蝕製程之後的N型金屬指108及P型金屬指109。雷射剝蝕製程通過金屬箔105切割但在介電質間隔物103終止。 As explained, the metal layer 104 may form a cap layer that is a metal that electrically connects the P-type doped region and the N-type doped region, and is then patterned to separate the P-type doped region and during patterning of the metal foil 105 N-type doped region. In other embodiments, according to the details of the manufacturing process, the metal layer 104 may be patterned before laser welding and ablation. This is schematically shown in FIG. 13 in which the metal layer 104 is formed on the P-type doped region and the N-type doped region which are not electrically connected. For example, the metal layer 104 may be deposited on the dielectric spacer 103, the N-type doped region, and the P-type doped region by overlay deposition, and then patterned as shown in FIG. 13 (eg, via Masking and etching) to separate N-type doped regions from P-type doped regions. As previously described, the metal foil 105 can then be placed on the patterned metal layer 104 and the dielectric spacer 103, laser welded to the metal layer 104, and patterned by laser ablation. FIG. 14 schematically shows the N-type metal fingers 108 and the P-type metal fingers 109 after the laser ablation process in this embodiment. The laser ablation process is cut through the metal foil 105 but terminated at the dielectric spacer 103.
揭露了製備太陽能電池的方法及結構。雖然提供了特定實施例,要了解的是這些實施例為用於描述目的而非限制性的。在參閱本揭露下許多添加的實施例對所屬技術領域具有通常知識者而言將為顯而易見的。 The method and structure for preparing solar cells are disclosed. Although specific embodiments are provided, it is understood that these embodiments are for descriptive purposes and not limiting. Many additional embodiments will be apparent to those of ordinary skill in the art after referring to this disclosure.
本揭露的範圍包含本文中所揭露的任何特徵或特徵的組 合(明顯地或隱含地)或其任何通則,而不管其是否減輕了在本文中所解決的任何或所有問題。據此,在本申請的審查(或主張優先權的本申請)期間可以任何這樣的特徵組合製訂新的申請專利範圍。特別是,參照所附的申請專利範圍,附屬項的特徵可與獨立項的特徵組合且各獨立項的特徵可以任何適當的方式組合而不僅為在所附的申請專利範圍中所列舉的特定組合。 The scope of this disclosure includes any features or groups of features disclosed herein Together (obviously or implicitly) or any of its general rules, regardless of whether it alleviates any or all of the problems addressed in this article. Accordingly, during the examination of this application (or this application claiming priority), any such combination of features can be used to formulate a new patent application scope. In particular, referring to the scope of the attached patent application, the features of the dependent items can be combined with the features of the independent items and the features of the individual items can be combined in any suitable way and not just the specific combinations listed in the appended patent application .
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US (3) | US9437756B2 (en) |
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KR (1) | KR102313263B1 (en) |
CN (2) | CN108039380B (en) |
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BR (1) | BR112016006585B1 (en) |
CL (1) | CL2016000712A1 (en) |
MX (1) | MX356833B (en) |
MY (1) | MY175353A (en) |
SA (1) | SA516370630B1 (en) |
SG (1) | SG11201601079QA (en) |
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Also Published As
Publication number | Publication date |
---|---|
SG11201601079QA (en) | 2016-03-30 |
AU2014327036A1 (en) | 2015-12-17 |
US9437756B2 (en) | 2016-09-06 |
KR20160061368A (en) | 2016-05-31 |
CN108039380A (en) | 2018-05-15 |
JP2016536808A (en) | 2016-11-24 |
US9865753B2 (en) | 2018-01-09 |
US20160343888A1 (en) | 2016-11-24 |
EP3050122B1 (en) | 2020-06-17 |
US20150090329A1 (en) | 2015-04-02 |
BR112016006585B1 (en) | 2021-08-03 |
CL2016000712A1 (en) | 2016-12-16 |
EP3050122A4 (en) | 2016-09-21 |
AU2014327036B2 (en) | 2018-07-05 |
TW201521220A (en) | 2015-06-01 |
CN108039380B (en) | 2020-07-10 |
CN105474412A (en) | 2016-04-06 |
BR112016006585A2 (en) | 2017-08-01 |
EP3050122A1 (en) | 2016-08-03 |
US10930804B2 (en) | 2021-02-23 |
WO2015047952A1 (en) | 2015-04-02 |
MY175353A (en) | 2020-06-22 |
SA516370630B1 (en) | 2019-04-11 |
MX2016003561A (en) | 2016-06-02 |
KR102313263B1 (en) | 2021-10-14 |
US20180097129A1 (en) | 2018-04-05 |
MX356833B (en) | 2018-06-15 |
JP6526020B2 (en) | 2019-06-05 |
CN105474412B (en) | 2018-01-02 |
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