TWI624835B - Puf circuit, magnetoresistive device and puf control method - Google Patents

Abstract

Embodiments of the present invention provide a control method of a physical non-reproducible function circuit, which can be applied to a physical non-reproducible function circuit and a magnetoresistive variable resistance device. The method includes initializing a magnetic tunneling interface component of a plurality of magnetoresistive variable resistance circuits to a resistance state, applying a first energy to the magnetic tunneling junction component, and determining the magnetic tunneling having a predetermined resistance state Whether a Hamming weight of the junction element is within a predetermined range of values.

Description

Physical non-replicable function circuit, magnetoresistive variable resistance device Control method with physical non-reproducible function circuit

The present invention relates to physical non-reproducible functional circuits, and more particularly to physical non-reproducible functional circuits using magnetic tunneling junction elements.

Physical Unclonable Function (PUF) can be used for data encryption, providing excellent randomness through the essential characteristics of components. In the application of PUF, Magnetoresistive Random Access Memory (MRAM) components have essential bidirectional resistance characteristics, fast and non-volatile characteristics, randomly varying magnetic anisotropy, and distribution characteristics of operating parameters. Makes MRAM components suitable for PUF applications.

With the advancement of technology, various electronic devices (both portable and fixed devices) can share and exchange information through the Internet and cloud storage. Under this circumstance, data security has become a topic that must be taken seriously. Therefore, there is a need for a PUF circuit and control method that enables the PUF function to be implemented in data encoding and encryption applications.

Embodiments of the present invention provide a physical non-reproducible function road. The physical non-reproducible functional circuit includes a control device and a first magnetoresistive variable resistance circuit array. The control device includes an energy generating circuit and a controller. The first magnetoresistive variable resistance circuit array is coupled to the control device, and the first magnetoresistive variable resistance circuit array includes a complex magnetoresistive variable resistance circuit. Each magnetoresistive variable resistance circuit includes a magnetic tunneling junction element. After the control device initializes the magnetic tunneling interface component to a resistance state, the control device provides the first energy to the magnetic tunneling junction component, and the control device determines whether the Hamming weight of the magnetic tunneling junction component having the predetermined resistance state is Within the predetermined range of values.

Embodiments of the present invention provide a magnetoresistive variable resistance device including a physical non-reproducible functional circuit and a second magnetoresistive variable resistance circuit array. The physical non-reproducible functional circuit includes a control device and a first magnetoresistive variable resistance circuit array. The control device includes an energy generating circuit and a controller. The first magnetoresistive variable resistance circuit array is coupled to the control device, and the first magnetoresistive variable resistance circuit array includes a complex magnetoresistive variable resistance circuit. Each magnetoresistive variable resistance circuit includes a magnetic tunneling junction element. After the control device initializes the magnetic tunneling interface component to a resistance state, the control device provides the first energy to the magnetic tunneling junction component, and the control device determines whether the Hamming weight of the magnetic tunneling junction component having the predetermined resistance state is Within the predetermined range of values. The second magnetoresistive variable resistance circuit array includes a first magnetoresistive variable resistance circuit array and a magnetoresistive random access memory cell array.

Embodiments of the present invention provide a method for controlling a physical non-reproducible function circuit. The method includes: initializing a magnetic tunneling interface component of a plurality of magnetoresistive variable resistance circuits to a resistance state, applying a first energy to the magnetic tunneling junction component; and determining a magnetic tunneling junction surface having a predetermined resistance state Hamming right of the component Whether the weight is within the predetermined value range.

Embodiments of the present invention provide a circuit and a control method for a physical non-reproducible function, so that a physical non-reproducible function can be implemented in an encoding and encryption application of data.

100‧‧‧Physical non-replicable function circuit

CD‧‧‧ control device

C‧‧‧ controller

E, E2‧‧‧ energy generation circuit

MCX, MCX2, MCX3, MCX8‧‧‧Magnetoresistive Variable Resistor Circuit Array

MC ₁₁ -MC _mn , MC‧‧‧Reluctance variable resistance circuit

M ₁₁ -M _mn , M‧‧‧ magnetic tunneling interface components

T1-T3, TA, TB, CA, CB, TO‧‧‧ endpoints

FL1, FL2‧‧‧ free layer

B1, B2‧‧‧ barrier layer

PL1, PL2‧‧‧ fixed layer

MT‧‧‧Metal

M1-M3‧‧‧O crystal

FM1, FM2, L1‧‧‧ structural layer

VM1-VM4‧‧‧ voltage

D1-d4‧‧‧ easy magnetization axis direction

H1-H5‧‧‧ magnetic field

I1, I2‧‧‧ current

MC81‧‧‧First row of reluctance variable resistance circuit

MC82‧‧‧Second row magnetoresistive variable resistance circuit

MC83‧‧‧ third row magnetoresistive variable resistance circuit

MC84‧‧‧ fourth row magnetoresistive variable resistance circuit

D, D2‧‧‧Magnetoresistive variable resistance device

MR, MR2‧‧‧ magnetoresistive random access memory cell array

101-105‧‧‧Steps

1 is a schematic diagram of a physical non-reproducible functional circuit according to an embodiment of the present invention; 2A and 2B are schematic views of a magnetoresistive variable resistance circuit according to an embodiment of the present invention; and 2C and 2D are diagrams according to the present invention; 3A and 3B are schematic views of a magnetic tunneling junction element according to an embodiment of the present invention; and FIGS. 4A and 4B are magnetic perforations according to an embodiment of the present invention; FIG. 5A, FIG. 5B are schematic diagrams showing operation of a magnetoresistive variable resistance circuit array and an applied magnetic field according to an embodiment of the present invention; and FIGS. 6A-6D are diagrams showing magnetic tunneling according to an embodiment of the present invention; The junction element, the relationship between the time of the applied magnetic field and the Hamming weight; FIG. 7 is a diagram showing the relationship between the voltage applied to the magnetic tunneling junction element and the flipped magnetic field according to an embodiment of the present invention; FIG. 8A-8C is based on Schematic diagram of the operation of the magnetoresistive variable resistance circuit array and the applied magnetic field in the embodiment of the present invention; 9A and 9B are schematic views of a reluctance type variable resistance device according to an embodiment of the present invention; and Fig. 10 is a flow chart showing a control method of a physical non-reproducible function circuit according to an embodiment of the present invention.

The above described objects, features and advantages of the embodiments of the present invention will become more apparent and understood.

1 is a schematic diagram of a physical non-reproducible functional circuit 100 in accordance with an embodiment of the present invention. The physical non-reproducible function circuit 100 includes a control device CD and a magnetoresistive variable resistance circuit array MCX. The control device CD includes an energy generating circuit E and a controller C. The magnetoresistive variable resistance circuit array MCX includes a complex magnetoresistive variable resistance circuit MC ₁₁ -MC _mn , where m and n are integers. Each of the magnetoresistive variable resistance circuits MC ₁₁ -MC _mn includes a magnetic tunnel junction (MTJ) element (that is, the magnetic tunnel junction surface element M ₁₁ -M shown in FIG. 1 ) _Mn ).

In some embodiments, the individual circuit structures of the magnetoresistive varistor circuits MC ₁₁ -MC _mn can be the same as the magnetoresistive random access memory cells (MRAM cells), such as 2A, 2B. The figure shows.

Fig. 2A is a schematic view of a magnetoresistive varistor circuit MC ₁₁ according to an embodiment of the present invention. Embodiment, the variable resistor circuit reluctance MC _{11 11} and the transistor M1 comprises a magnetic MTJ element M in this embodiment. The magnetic tunneling junction element M ₁₁ includes a free layer FL1, a barrier layer B1, and a fixed layer PL1. One end of the magnetic tunneling interface element M ₁₁ is connected to the transistor M1, and the other end of the magnetic tunneling interface element M ₁₁ (ie, the end point T1) is coupled to the controller C. One end of the transistor M1 is connected to the magnetic tunneling interface element M ₁₁ , and the terminals T2 and T3 of the transistor M1 are respectively coupled to the controller C.

In some embodiments, the magnetic element MTJ of FIG. 2A M ₁₁ may be connected through the transistor M1 FLl free layer, and the magnetic MTJ element M ₁₁ may be coupled through controller pinned layer PL1 C. In some embodiments, the material of the free layer FL1 is a ferromagnetic metal, and the material of the barrier layer B1 is an insulator.

In another embodiment, the circuit configuration of the magnetoresistive variable resistance circuit MC ₁₁ is as shown in FIG. 2B. In this embodiment, the magnetoresistive variable resistance circuit MC ₁₁ includes a magnetic tunneling junction element M ₁₁ and transistors M2, M3, and the circuit structure and spin track memory of the magnetoresistive variable resistance circuit MC ₁₁ The unit (spin orbit torque (SOT) MRAM cell) is the same. The magnetic tunneling junction element M ₁₁ includes a free layer FL2, a barrier layer B2, a fixed layer PL2, and a metal MT. One end of the metal MT is connected to the transistor M3, and the other end of the metal MT (ie, the terminal TO) is coupled to the controller C. One end of the transistor M2 is connected to the magnetic tunneling interface element M ₁₁ , and the terminals TB and CB of the transistor M2 are respectively coupled to the controller C. One end of the transistor M3 is connected to the metal MT, and the terminals TA and CA of the transistor M3 are respectively coupled to the controller C.

In some embodiments, the magnetoresistive variable resistance circuits MC ₁₁ -MC _mn of the magnetoresistive variable resistance circuit array MCX have the same circuit configuration. In some embodiments, the material of the free layer FL2 is a ferromagnetic metal, the material of the barrier layer B2 is an insulator, and the material of the metal MT is a non-ferromagnetic metal.

In some embodiments, the structures of the fixed layer PL1 and the fixed layer PL2 of FIGS. 2A and 2B are as shown in FIG. 2C or FIG. 2D. The fixed layers shown in FIGS. 2C and 2D include structural layers FM1, L1, and FM2. As shown in Figures 2C and 2D, the structural layer FM1 The direction of the magnetic moment is opposite to the direction of the magnetic moment of the structural layer FM2. In some embodiments, the material of the structural layers FM1, FM2 is a ferromagnetic metal, and the material of the structural layer L1 is ruthenium (Ru).

3A is a schematic diagram of FIG M ₁₁ MTJ magnetic element according to embodiments of the present invention, wherein the MTJ magnetic element M ₁₁ is a horizontal spin. In this embodiment, the direction of magnetic moments MTJ free layer ₁₁ of the element M to the direction of the magnetic moment of the fixed FL1 layer PL1 is opposite, so the magnetic element MTJ of FIG. 3A-M ₁₁ having a high resistance state. In some embodiments, if the direction along the magnetic easy axis of magnetization MTJ element (easy axis) M ₁₁ is opposite to the direction d1 is applied to the magnetic moment of the free layer FL1 magnetic field H1, the magnetic field strength in the magnetic field H1 or maintenance under sufficient time, the direction of the magnetic moment of the free layer FL1 will be the same as the magnetic field H1 reversed directions of magnetic moments of the fixed layer PL1, and thus the magnetic MTJ element M ₁₁ has a low resistance state. In some embodiments, the magnetic field that steers the direction of the magnetic moment of the free layer FL1 may be referred to as a flipped magnetic field.

In some embodiments, a voltage VM1 can be applied to both ends of the MTJ magnetic element M ₁₁ (as shown in FIG. 3A). Different voltages VM1 may cause the magnetic field (eg, magnetic field H1) to reverse the direction of the magnetic moment of the free layer FL1 with different magnetic field strengths or different sustain times. In some embodiments, the voltage may be applied to the magnetic tunnel junction element VM1 ends M ₁₁ (as shown in FIG. 3A) in one direction and a magnetic field applied to the magnetic element M ₁₁ MTJ free layer FL1 The direction of the magnetic moment is reversed. In some embodiments, the permeable element may be a direction of the magnetic moment of the free layer FL1 magnetic field (or a magnetic field applied to the MTJ element ₁₁ at both ends of the magnetic voltage M), opposite to the horizontal magnetic spin tunnel junction M ₁₁ is switched from a low resistance state to a high resistance state.

FIG 3B is a schematic diagram of a magnetic M ₁₁ MTJ element according to embodiments of the present invention, wherein the magnetic tunneling junction element M ₁₁ is a vertical spin. In this embodiment, the direction of magnetic moments MTJ free layer ₁₁ of the element M to the direction of the magnetic moment of the fixed FL1 layer PL1 of the same, so the magnetic element MTJ of FIG. 3A-M ₁₁ has a low resistance state. In this case, when d2 is applied to a case where the direction opposite to the magnetic moment of the free magnetic layer FL1 MTJ device along the magnetic easy axis of the H2 M _11, the magnetic field strength is sufficient magnetic field H2 or the duration of , the direction of the magnetic moment of the free layer FL1 will be reversed magnetic field H1 and the direction opposite to the magnetic moment of the pinned layer PL1, and thus the magnetic MTJ element M ₁₁ having a high resistance state.

In some embodiments, the voltage may be applied to the magnetic tunnel junction element VM2 ends M ₁₁ (as shown in FIG. 3B). The different voltages VM2 can cause the magnetic field H2 to reverse the direction of the magnetic moment of the free layer FL1 with different magnetic field strengths or different sustain times. In some embodiments, the voltage may be applied to the magnetic tunnel junction element VM2 ends M ₁₁ (as shown in FIG. 3B) and a magnetic field is applied to a direction of the magnetic element M ₁₁ MTJ free layer FL1 The direction of the magnetic moment is reversed. In some embodiments, the opposite may also be through the direction of the magnetic moment of the free layer FL1 magnetic field (or a magnetic field applied to the magnetic tunnel junction ₁₁ the voltage across the element M), perpendicular to the spin magnetic tunnel junction The element M ₁₁ is switched from a high resistance state to a low resistance state.

Figure 4A is a schematic view of a magnetic tunnel junction M ₁₁ embodiment of the element according to embodiments of the present invention, wherein the MTJ magnetic element M ₁₁ is a horizontal spin. In this embodiment, the direction of magnetic moments MTJ free layer ₁₁ of the element M to the direction of the magnetic moment of the fixed FL2 layer PL2 of the same, so the magnetic element MTJ of FIG. 4A M ₁₁ has a low resistance state. In this case, d3 is applied to the direction opposite to the magnetic moment of the free magnetic layer FL2 H3 MTJ element along the magnetic easy axis M _11, the direction of the magnetic moment of the free layer FL2 enable reversal of the fixed layer PL2 opposite direction of the magnetic moment, and thus the magnetic MTJ element M ₁₁ having a high resistance state.

In some embodiments, the voltage may be applied to both ends of the magnetic VM3 MTJ element M ₁₁ (as shown in FIG. 4A). The different voltages VM3 can cause the magnetic field H3 to reverse the direction of the magnetic moment of the free layer FL2 with different magnetic field strengths or different sustain times. In some embodiments, the voltage may be applied to the magnetic tunnel junction element VM3 ends M ₁₁ (as shown in FIG. 4A) and a magnetic field is applied to a direction of the magnetic element M ₁₁ MTJ free layer FL2 The direction of the magnetic moment is reversed. In some embodiments, the opposite may also be through the direction of the magnetic moment of the free magnetic layer FL2 (or a magnetic field applied to the MTJ element ₁₁ at both ends of the magnetic voltage M), the horizontal spin magnetic tunnel junction The element M ₁₁ is switched from a high resistance state to a low resistance state.

In some embodiments, the direction of the magnetic moment of the free layer FL2 can be reversed by the current I1 flowing through the metal MT. In some embodiments, the magnetic moment direction of the free layer FL2 is reversed by the current I1 and a magnetic field. In some embodiments, the magnetic moment direction of the free layer FL2 is reversed by the current I1 and the voltage VM3. In some embodiments, the magnetic moment direction of the free layer FL2 is reversed by the current I1, a magnetic field and the voltage VM3.

Figure 4B is a schematic diagram of a magnetic M ₁₁ MTJ element according to embodiments of the present invention, wherein the magnetic tunneling junction element M ₁₁ is a vertical spin. In this embodiment, the direction of magnetic moments MTJ free layer ₁₁ of the element M to the direction of the magnetic moment of the fixed FL2 layer PL2 of the opposite, so the magnetic tunnel junction element ₁₁ of Figure 4B M having a high resistance state. In this case, the magnetic moment is applied opposite to the direction of the free magnetic layer FL2 H4 MTJ element along the magnetic easy axis d4 M _11, the direction of the magnetic moment of the free layer FL2 enable reversal of the fixed layer PL2 of the magnetic moment in the same direction, and thus the magnetic MTJ element M ₁₁ has a low resistance state.

In some embodiments, the voltage may be applied to both ends of the magnetic VM4 MTJ element M ₁₁ (as shown in Figure 4B). The different voltages VM4 can cause the magnetic field H4 to reverse the direction of the magnetic moment of the free layer FL2 with different magnetic field strengths or different sustain times. In some embodiments, the voltage may be applied to the magnetic tunnel junction element VM4 ends M ₁₁ (as shown in Figure 4B) and a magnetic field is applied to a direction of the magnetic element M ₁₁ MTJ free layer FL2 The direction of the magnetic moment is reversed. In some embodiments, the opposite may also be through the direction of the magnetic moment of the free magnetic layer FL2 (or a magnetic field applied to the MTJ element ₁₁ at both ends of the magnetic voltage M), perpendicular to the spin magnetic tunnel junction The element M ₁₁ is switched from a low resistance state to a high resistance state.

In some embodiments, the direction of the magnetic moment of the free layer FL2 can be reversed by the current I2 flowing through the metal MT. In some embodiments, the magnetic moment direction of the free layer FL2 is reversed by the current I2 and a magnetic field. In some embodiments, the magnetic moment direction of the free layer FL2 is reversed by the current I2 and the voltage VM4. In some embodiments, the permeable current I2, a magnetic field, and the voltage VM4 reverse the direction of the magnetic moment of the free layer FL2.

Based on the contents of FIGS. 3A, 3B, 4A, and 4B, the control device CD can apply at least one of a magnetic field and a current (or at least two of a magnetic field, a current, and a voltage) to the magnetoresistive type through the energy generating circuit E. The magnetic tunneling interface elements M ₁₁ -M _{mn of the} resistor circuit array MCX are used to change the individual resistance states of the magnetic tunneling junction elements M ₁₁ -M _mn . In some embodiments, the energy generating circuit E can include a voltage source, a current source, an electromagnet, or a wire that can flow current.

In some embodiments, the controller C controls the switching elements of the magnetoresistive variable resistance circuits MC ₁₁ -MC _mn (eg, the transistor M1 or the transistors M2-M3) to activate the magnetoresistive variable resistance circuit MC ₁₁ -MC _Mn . Then, the control device CD initializes the magnetoresistive varistor circuits MC ₁₁ -MC _mn to a resistive state (for example, a high resistance state or low) through energy supplied from the energy generating circuit E (for example, energy including a magnetic field, a current, or a voltage). Resistance state).

Randomly varying magnetic anisotropy based on magnetic tunneling interface elements M ₁₁ -M _mn and distribution characteristics of operating parameters (eg, magnetic moments of individual free layers of magnetic tunneling interface elements M ₁₁ -M _mn due to process drift) Having different inversion conditions), after the initialization operation is completed, when the control device CD supplies the first energy generated by the energy generating circuit E (for example, energy including a magnetic field, a current or a voltage) to the reluctance variable resistance circuit When the magnetic tunneling interface elements M ₁₁ -M _{mn of the} MC ₁₁ -MC _mn , the individual resistance states of the magnetic tunneling interface elements M ₁₁ -M _mn are randomly changed (or unchanged) and are less affected by temperature, In turn, a physical non-reproducible function is achieved.

Fig. 5A is a view showing the operation of the magnetoresistive varistor circuit array MCX and the magnetic field H5 according to an embodiment of the present invention. In this embodiment, m and n of the physical non-reproducible functional circuit 100 are equal to four. For the sake of brevity and clarity, the arrows of the magnetic tunneling junction elements M ₁₁ -M ₄₄ of Fig. 5A indicate the direction of the magnetic moment of the free layer.

In this embodiment, the control device CD has initialized the magnetic tunneling interface elements M ₁₁ -M ₄₄ to the same resistive state. In other words, the control device CD has polarized the magnetic moment directions of the individual free layers of the magnetic tunneling interface elements M ₁₁ -M ₄₄ to the same direction.

As shown in FIG. 5A, the control device CD supplies the first energy (ie, the magnetic field H5) generated by the energy generating circuit E to the magnetic tunneling interface elements M ₁₁ -M ₄₄ , wherein the magnetic field H5 shown in FIG. 5A The direction is for illustrative purposes and does not impose limitations on embodiments of the invention. In some embodiments, the magnetic field H5 is along a direction parallel to the easy axis of magnetization of the magnetic tunneling junction elements M ₁₁ -M ₄₄ (or along at least one of the magnetic tunneling junction elements M ₁₁ -M ₄₄ The axis of the easy magnetization axis is parallel, and the direction of the magnetic field H5 is opposite to the direction of the magnetic moment of the free layer of the magnetic tunneling interface elements M ₁₁ -M ₄₄ . The control device CD supplies the magnetic field H5 to the magnetic tunneling junction elements M ₁₁ -M ₄₄ , whereby the magnetic anisotropy based on the random variation of the magnetic tunneling interface elements M ₁₁ -M ₄₄ and the distribution characteristics of the operational parameters are in the magnetic The resistive variable resistance circuit array MCX produces a randomly distributed resistance state.

In some embodiments, after the control device CD supplies the magnetic field H5 to the magnetic tunneling interface elements M ₁₁ -M ₄₄ , the control device CD determines that it has a predetermined resistance state (eg, a high resistance state corresponding to a logic "1" or a corresponding logic" Whether the Hamming weight of the above-mentioned magnetic tunneling junction element of the low resistance state of 0" is within a predetermined value range. The Hamming weight is equal to "the number of the above-mentioned magnetic tunneling junction elements having the predetermined resistance state" divided by the "total number of magnetic tunneling junction elements". For example, if the predetermined resistance state is a high resistance state and 8 of the magnetic tunneling interface elements M ₁₁ -M ₄₄ are in a high resistance state, the magnetic tunneling interface element M ₁₁ - The Hamming weight of the M ₄₄ is 50%. In some embodiments, the predetermined value may range from 40% to 60%, thereby ensuring a variable resistance circuit reluctance of the magnetic array MCX MTJ device the resistance state of M ₁₁ -M ₄₄ having randomness.

In some embodiments, if the control device CD determines that the Hamming weight is within the predetermined range, the control device CD stops providing the magnetic field H5 to the magnetic tunneling junction elements M ₁₁ -M ₄₄ . For example, when the predetermined range is 45% to 55% and the control device CD determines that the Hamming weight is 50% (as shown in FIG. 5B), the control device CD stops providing the magnetic field H5 to the magnetic tunneling interface component. M ₁₁ -M ₄₄ .

In some embodiments, if the control device CD determines that the Hamming weight is not within the predetermined range, the control device CD provides the second energy (eg, at least one of a magnetic field, a current, or at least two of a magnetic field, a current, and a voltage) To the magnetic tunneling junction elements M ₁₁ -M ₄₄ . In some embodiments, the second energy is the same as the first energy. In some embodiments, the second energy is different from the first energy. In some embodiments, if the control device CD determines that the Hamming weight is not within the predetermined range, the control device CD provides different (or the same) energy (eg, at least one of a magnetic field, a current, or a magnetic field, a current, or a voltage). At least two) to the magnetic tunneling junction elements M ₁₁ -M ₄₄ until the control device CD determines that the Hamming weights are within the predetermined range.

In some embodiments, the control device CD determines whether the Hamming weight is within the predetermined range when the magnetic field H5 is supplied to the magnetic tunneling interface elements M ₁₁ -M ₄₄ . In some embodiments, the control device CD determines whether the Hamming weight is within the predetermined range after the magnetic field H5 is supplied to the magnetic tunneling junction elements M ₁₁ -M ₄₄ and the magnetic field H5 is maintained for a predetermined time.

In some embodiments, based on the magnetic anisotropy of the magnetic tunneling junction elements M ₁₁ -M _mn and the distribution characteristics of the operational parameters, different physical properties after the randomization operation as described in FIG. 5A The Hamming distance between the non-reproducible functional circuits 100 can also be close to 50%. The above Hamming distance represents between the different physical non-reproducible functional circuits 100, "the number of magnetic tunneling interface elements having different resistance states in the magnetic tunneling interface elements of the relative position reluctance type variable resistance circuit Divide by "the total number of magnetic tunneling junction elements". For example, if m and n of the physical non-reproducible functional circuit 100 are equal to 2, between the first physical non-reproducible functional circuit 100 and the second physical non-reproducible functional circuit 100, if the first physical the magnetic circuit is not replication MTJ element of M ₁₁ 100, M _12, M ₂₁ and the second resistance state of the physical unclonable function of the magnetic circuit 100 of the MTJ element M _11, M _12, M ₂₁ of The resistance states are different, and the resistance states of the individual magnetic tunneling interface elements M ₂₂ of the first and second physical non-reproducible functional circuits 100 are the same, and the first and second physical non-reproducible functional circuits 100 are Hamming distance is 75%.

In some embodiments, the structure of the magnetoresistive varistor circuit MC ₁₁ -MC ₄₄ is as shown in FIG. 2A, and the structure of the magnetic tunneling interface elements M ₁₁ -M ₄₄ is as shown in FIG. 3A or FIG. 3B. The control circuit CD can provide a magnetic field or a magnetic field and a voltage to the magnetic tunneling interface elements M ₁₁ -M _{44 of the} magnetoresistive variable resistance circuit array MCX through the energy generating circuit E, thereby forming a magnetoresistive variable resistance circuit array. The MCX produces a randomly distributed resistance state. In some embodiments, the structure of the magnetoresistive varistor circuit MC ₁₁ -MC ₄₄ is as shown in FIG. 2B, and the structure of the magnetic tunneling interface elements M ₁₁ -M ₄₄ is as shown in FIG. 4A or FIG. 4B. The control circuit CD can provide at least two currents or currents, magnetic fields, and voltages through the energy generating circuit E to the magnetic tunneling interface elements M ₁₁ -M _{44 of the} magnetoresistive variable resistance circuit array MCX, thereby making the magnetoresistance The varistor circuit array MCX produces a randomly distributed resistance state.

6A-6D are graphs showing the relationship between the sustain time of the magnetic field, the number of tests, and the Hamming weight of the magnetic tunneling junction element in the embodiment of the present invention. The magnetic field is applied to a plurality of magnetic tunneling junction elements that have been initialized to a resistive state and are oriented parallel to the direction of the easy axis of magnetization of the magnetic tunneling junction elements (e.g., Figure 5A). It can be seen from Fig. 6A-6D that with the addition of the above-mentioned magnetic field Increasingly, each time the magnetic field is applied to the magnetic tunneling junction element, the Hamming weight of the magnetic tunneling junction element having a predetermined resistance state (for example, a high resistance state) is also increased.

Figure 7 is a graph of voltage applied to a magnetic tunneling junction element (e.g., VM1-VM4) versus a flipped magnetic field in accordance with an embodiment of the present invention. As shown in Fig. 7, applying different voltages to the magnetic tunneling junction elements can change the magnitude of the flipping magnetic field. Thus, in some embodiments, the voltage (e.g., VM1-VM4) may change the Hamming weight of the magnetic tunneling junction element when a fixed magnetic field magnitude is applied to the plurality of magnetic tunneling junction elements.

Some embodiments of the present invention apply a magnetic field direction to the easy magnetization axis of the magnetic tunneling junction elements M ₁₁ -M _mn of the physical non-reproducible functional circuit 100. Embodiments of the present invention for applying a magnetic field on an easy magnetization axis can be reduced in comparison to embodiments in which a magnetic field direction is applied to the hard axis of the magnetic tunneling interface elements M ₁₁ -M _mn for randomization. The magnetoresistive variable resistance circuit array MCX generates magnetic field energy required for randomized distribution of resistance states.

For example, in some embodiments (as shown in Figures 8A-8C), the magnetoresistive varistor circuit array MCX8 has a first row of reluctance varistor circuit MC81, and a second row of reluctance type variable The resistor circuit MC82, the third row magnetoresistive variable resistor circuit MC83, and the fourth row magnetoresistive variable resistor circuit MC84. The first to fourth rows of magnetoresistive variable resistance circuits MC81-MC84 respectively have four magnetoresistive variable resistance circuits MC, and each of the magnetoresistive variable resistance circuits MC includes a magnetic tunneling junction element M. For the sake of brevity and clarity, the arrows of the magnetic tunneling junction element M of Figures 8A-8C represent the direction of the magnetic moment of the free layer.

In Figure 8A, the magnetism of the magnetoresistive varistor circuit array MCX8 The tunneling junction elements M have all been initialized to the same resistance state. In Fig. 8B, the energy generating circuit E2 (e.g., an electromagnet) provides a magnetic field H8 that is mostly along the direction of the hard magnetization axis of the magnetic tunneling interface element M. The purpose of applying the magnetic field H8 is to steer the magnetic moment direction of each free layer of the tunneling interface element M so that the magnetic moment of the free layer of each of the magnetic tunneling interface elements M can be randomly after the magnetic field H8 is removed. The direction to the easy magnetization axis (which may be the same or opposite to the initial state) is restored, whereby the randomization operation of the magnetoresistive variable resistance circuit array MCX8 is performed.

Further embodiments of the present invention are those in which the magnetic moment of a portion of the magnetic tunneling interface element is reversed by a magnetic field on the easy axis to be randomized, and each magnetic field must be ensured compared to the magnetic field H8 of Fig. 8B. The embodiment of the present invention for applying a magnetic field on the easy axis of magnetization of the free layer of the tunneling junction element M can reduce the need to generate a randomly distributed resistance state in the magnetoresistive varistor circuit array. Magnetic field energy.

On the other hand, as shown in FIGS. 8B and 8C, the magnetic field in the direction of the hard magnetization axis of the magnetic tunneling interface element M is applied to perform randomization operation, which may be random due to the direction shift or error of the magnetic field. The magnetoresistive variable resistance circuit array MCX8 has a specific resistance state in a specific region. As shown in FIGS. 8B and 8C, the magnetic field of the magnetoresistive varistor circuit array MCX8 is completed after randomization (for example, the content of FIG. 8B), due to the direction shift or error of the magnetic field in the direction of the hard magnetization axis. The resistive variable resistance circuit MC81 is prone to reverse the magnetic moment direction of the free layer, and the fourth row of the magnetoresistive variable resistance circuit MC84 is prone to the fact that the magnetic moment direction of the free layer is not reversed. Since the randomized operation mode shown in FIG. 8A-8C has a similar effect on different magnetoresistive variable resistance circuit arrays MCX8, different magnetoresistive variable resistance circuit arrays MCX8 are in use of the 8A-8C. Map After the randomized operation mode, the Hamming distances of different magnetoresistive variable resistance circuit arrays MCX8 may be low (because of the first and fourth rows of magnetoresistance of different magnetoresistive variable resistance circuit array MCX8) The variable resistance circuits MN81, MC84 are prone to similar resistance state distributions).

It can be seen that some embodiments of the present invention apply a magnetic field direction to the magnetic tunneling interface element M _{11 as} compared to the embodiment in which the magnetic field direction is applied to the hard magnetization axis of the magnetic tunneling interface elements M ₁₁ -M _mn . The operation mode of the easy magnetization axis of -M _mn can reduce the magnetic field energy required to generate a randomly distributed resistance state in the magnetoresistive variable resistance circuit array MCX, and is generated between the plurality of physical non-reproducible functional circuits 100 The preferred Hamming distance.

In some embodiments, the magnetic field H8 can be simultaneously applied to the magnetoresistive variable resistance circuit array MCX8 and the individual magnetic tunneling interface elements M applied to the magnetoresistive variable resistance circuit array MCX8 for each magnetic wear. The magnetic moment of the free layer of the tunnel face element M can be randomly restored to the direction of the easy magnetization axis (which can be in the same direction or opposite to the initial state) after the magnetic field H8 is removed, thereby performing the magnetoresistive variable resistance circuit array Randomization of MCX8.

Fig. 9A is a schematic view of a magnetoresistive type variable resistance device D according to an embodiment of the present invention. The magnetoresistive variable resistance device D includes a control device CD and a magnetoresistive variable resistance circuit array MCX2. The magnetoresistive variable resistance circuit array MCX2 includes a magnetoresistive variable resistance circuit array MCX and a magnetoresistive random access memory (MRAM) cell array MR. The control device CD and the magnetoresistive type are connected to the variable resistance circuit array MCX and constitute a physical non-reproducible function circuit 100.

As shown in FIG. 9A, the magnetoresistive variable resistance circuit array MCX of the physical non-reproducible functional circuit 100 can be connected with the magnetoresistive random access memory unit. Array integration (eg using the same circuit architecture), thereby reducing circuit size.

Fig. 9B is a schematic view of a magnetoresistive type variable resistance device D2 according to an embodiment of the present invention. The magnetoresistive variable resistance device D2 includes two control devices CD and a magnetoresistive variable resistance circuit array MCX3. The magnetoresistive variable resistance circuit array MCX3 includes two magnetoresistive variable resistance circuit arrays MCX and a magnetoresistive random access memory cell array MR2. The two control devices CD and the two magnetoresistive variable resistance circuit arrays MCX respectively constitute two physical non-reproducible functional circuits 100.

In some embodiments, one of the physical non-reproducible functional circuits 100 is used to generate a one-time physical non-reproducible function key, and the other physical non-reproducible functional circuit 100 is used to transmit data each time. Generate an identification code. As shown in FIG. 9B, the magnetoresistive variable resistance circuit array MCX of the two physical non-reproducible functional circuits 100 can be integrated with the magnetoresistive random access memory cell array MR2 (for example, using the same circuit architecture). This reduces the circuit size.

Figure 10 is a flow chart showing a method of controlling a physical non-reproducible function circuit in accordance with an embodiment of the present invention. In step 101, the magnetic tunneling interface component of the complex magnetoresistive varistor circuit is initialized to a resistive state. In step 102, a first energy (eg, energy including a magnetic field, current, or voltage) is applied to the magnetic tunneling junction elements. In step 103, it is determined whether a Hamming weight of the magnetic tunneling junction element having a predetermined resistance state is within a predetermined range of values. If so, the method ends at step 105; if not, the method proceeds to step 104. In step 104, a second energy (eg, energy including a magnetic field, current, or voltage) is applied to the magnetic tunneling junction elements. In step 105, the application is stopped. The first energy is to the magnetic tunneling junction elements.

In some embodiments, the second energy is the same as the first energy. In some embodiments, the second energy is different from the first energy.

In some embodiments, the first energy comprises a magnetic field that is maintained for a predetermined time. The direction of the magnetic field is parallel to the direction of the easy axis of magnetization of at least one of the magnetic tunneling interface elements.

In some embodiments, the magnetoresistive variable resistance circuits are spin-orbit memory cells, and each of the magnetic tunneling junction elements is connected to a metal wire. The first energy includes a current flowing through the metal wire.

The embodiments of the present invention are disclosed in the above preferred embodiments, and are not intended to limit the scope of the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (12)

A physical non-reproducible function circuit includes: a control device including an energy generating circuit and a controller; and a first magnetoresistive variable resistance circuit array coupled to the control device, and the first magnetoresistive type The variable resistance circuit array includes a plurality of magnetoresistive variable resistance circuits, each of the magnetoresistive variable resistance circuits including a magnetic tunneling junction element; wherein the control device initializes the magnetic tunneling interface elements to After a resistance state, the control device provides a first energy to the magnetic tunneling junction elements, and the control device determines whether a Hamming weight of the magnetic tunneling junction element having a predetermined resistance state is at a predetermined time Within the numerical range, wherein the Hamming weight is the number of the magnetic tunneling junction elements having the predetermined resistance state divided by the total number of the magnetic tunneling junction elements. The physical non-reproducible function circuit of claim 1, wherein the control device stops providing the first energy to the magnetic tunneling junction elements if the Hamming weight is within the predetermined value range . The physical non-reproducible function circuit of claim 1, wherein the control device provides a second energy to the magnetic tunneling junction elements if the Hamming weight is not within the predetermined value range. The physical non-reproducible function circuit of claim 1, wherein the first energy comprises a magnetic field maintained for a predetermined time; wherein the direction of the magnetic field and at least one of the magnetic tunneling interface elements The direction of the easy magnetization axis of the magnetic tunneling junction element is parallel. The physical non-reproducible function as described in item 1 of the patent application scope The circuit, wherein the first energy comprises a magnetic field and a voltage applied to the magnetic tunneling interface elements individually. The physical non-reproducible function circuit according to claim 1 or 5, wherein the magnetoresistive variable resistance circuit is a spin track memory unit, and each of the magnetic tunneling interface elements Each is connected to a metal wire; wherein the first energy includes a current flowing through the metal wire. The physical non-reproducible function circuit according to claim 1, wherein the magnetoresistive variable resistance circuit is a spin track memory unit, and each of the magnetic tunneling interface elements is connected to a metal a wire; wherein the first energy comprises a magnetic field, at least two of a voltage applied to the magnetic tunneling junction elements and a current flowing through the metal wires. A magnetoresistive variable resistance device comprising: the physical non-reproducible functional circuit according to claim 1; and a second magnetoresistive variable resistance circuit array including the first magnetoresistive variable A resistor circuit array and a magnetoresistive random access memory cell array. A method for controlling a physical non-reproducible functional circuit includes: initializing a magnetic tunneling interface component of a plurality of magnetoresistive variable resistance circuits to a resistance state, applying a first energy to the magnetic tunneling junction components And determining whether a Hamming weight of the magnetic tunneling junction element having a predetermined resistance state is within a predetermined value range, wherein the Hamming weight is the magnetic tunneling junction element having the predetermined resistance state The number is divided by the total number of such magnetic tunneling junction elements. The method for controlling a physical non-reproducible function circuit according to claim 9 further includes: if the Hamming weight is within the predetermined value range, stopping applying the first energy to the magnetic tunneling junctions An element; and if the Hamming weight is not within the predetermined range of values, applying a second energy to the magnetic tunneling junction elements. The control method of the physical non-reproducible function circuit according to claim 9, wherein the first energy comprises a magnetic field maintained for a predetermined time; wherein the direction of the magnetic field and the magnetic tunneling interface element The direction of the easy magnetization axis of at least one of the magnetic tunneling interface elements is parallel. The method for controlling a physical non-reproducible function circuit according to claim 9, wherein the magnetoresistive variable resistance circuit is a spin track memory unit, and each of the magnetic tunneling interface elements is Connecting a metal wire; wherein the first energy comprises a current flowing through the metal wire.