TWI624088B - Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy - Google Patents

Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy

Info

Publication number
TWI624088B
TWI624088B TW103100976A TW103100976A TWI624088B TW I624088 B TWI624088 B TW I624088B TW 103100976 A TW103100976 A TW 103100976A TW 103100976 A TW103100976 A TW 103100976A TW I624088 B TWI624088 B TW I624088B
Authority
TW
Taiwan
Prior art keywords
system
method
tunneling junction
magnetic tunneling
providing magnetic
Prior art date
Application number
TW103100976A
Other versions
TW201436316A (en
Inventor
Dmytro Apalkov
William H Butler
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US13/739,959 priority Critical patent/US8780665B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW201436316A publication Critical patent/TW201436316A/en
Application granted granted Critical
Publication of TWI624088B publication Critical patent/TWI624088B/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
TW103100976A 2010-08-11 2014-01-10 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy TWI624088B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/739,959 US8780665B2 (en) 2010-08-11 2013-01-11 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy

Publications (2)

Publication Number Publication Date
TW201436316A TW201436316A (en) 2014-09-16
TWI624088B true TWI624088B (en) 2018-05-11

Family

ID=51146755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103100976A TWI624088B (en) 2010-08-11 2014-01-10 Method and system for providing magnetic tunneling junction elements having an easy cone anisotropy

Country Status (3)

Country Link
KR (1) KR20140091481A (en)
CN (1) CN103928607B (en)
TW (1) TWI624088B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180050609A (en) * 2015-06-05 2018-05-15 알레그로 마이크로시스템스, 엘엘씨 Spin Valve Magnetoresistive Element with Improved Response to Magnetic Fields
KR101897916B1 (en) * 2017-06-20 2018-10-31 고려대학교 산학협력단 Magnetic Tunnel Junction Device with a magnetic layer of easy-cone state

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376260B1 (en) * 1999-07-19 2002-04-23 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US20020105823A1 (en) * 2000-12-07 2002-08-08 Commissariat A L'energie Atomique Magnetic spin polarisation and magnetisation rotation device with memory and writing process, using such a device
US20020105827A1 (en) * 2000-12-07 2002-08-08 Commissariat A L'energie Atomique Three-layered stacked magnetic spin polarisation device with memory, using such a device
US20030059588A1 (en) * 2001-09-27 2003-03-27 Hannah Eric C. Electron spin mechanisms for inducing magnetic-polarization reversal
US20040136231A1 (en) * 2003-01-10 2004-07-15 Yiming Huai Magnetostatically coupled magnetic elements utilizing spin transfer and an mram device using the magnetic element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007980A (en) * 2001-06-20 2003-01-10 Sony Corp Modulation method for magnetic characteristic and magnetiic functional device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376260B1 (en) * 1999-07-19 2002-04-23 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US20020105823A1 (en) * 2000-12-07 2002-08-08 Commissariat A L'energie Atomique Magnetic spin polarisation and magnetisation rotation device with memory and writing process, using such a device
US20020105827A1 (en) * 2000-12-07 2002-08-08 Commissariat A L'energie Atomique Three-layered stacked magnetic spin polarisation device with memory, using such a device
US20030059588A1 (en) * 2001-09-27 2003-03-27 Hannah Eric C. Electron spin mechanisms for inducing magnetic-polarization reversal
US20040136231A1 (en) * 2003-01-10 2004-07-15 Yiming Huai Magnetostatically coupled magnetic elements utilizing spin transfer and an mram device using the magnetic element

Also Published As

Publication number Publication date
CN103928607A (en) 2014-07-16
TW201436316A (en) 2014-09-16
KR20140091481A (en) 2014-07-21
CN103928607B (en) 2018-04-20

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