TWI612681B - Solar cell, module comprising the same and method of manufacturing the same - Google Patents

Solar cell, module comprising the same and method of manufacturing the same Download PDF

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Publication number
TWI612681B
TWI612681B TW102142986A TW102142986A TWI612681B TW I612681 B TWI612681 B TW I612681B TW 102142986 A TW102142986 A TW 102142986A TW 102142986 A TW102142986 A TW 102142986A TW I612681 B TWI612681 B TW I612681B
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Taiwan
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plurality
electrode
passivation layer
surface
barrier layers
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TW102142986A
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Chinese (zh)
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TW201521213A (en
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陳亮斌
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茂迪股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

A solar cell, a module thereof and a method of manufacturing the same, the battery comprising: a substrate including an opposite first surface and a second surface; a first doping region and a second doping on the second surface a passivation layer covering the first doped region and the second doped region, a plurality of barrier layers arranged on the second face, a first electrode, and a second electrode. Between any two adjacent barrier layers there is an opening that exposes the second face. The first electrode and the second electrode are located on the plurality of barrier layers, and respectively contact the first doped region and the second doped region through the opening, and at least one of the two electrodes comprises a material The composition of the passivation layer is burned through. The battery structure of the invention is innovative and the film quality is good, and the photoelectric conversion efficiency can be improved.

Description

Solar battery, module thereof and manufacturing method thereof

The invention relates to a solar cell, a module thereof and a manufacturing method thereof, in particular to a twinned solar cell, a module thereof and a manufacturing method thereof.

Referring to Figure 1, a known back contact type (Back Contact) a solar cell comprising: an n-type substrate 91, a front surface 911 of the substrate 91 having a carrier concentration greater than a front surface electric field layer 913 of the substrate 91, and an anti-reflection on the front surface electric field layer 913 a layer 92, at least one p-type doping region 914 on the back surface 912 side of the substrate 91, and at least one n-type doping region 915, a passivation layer 93 on the back surface 912, and at least one pass through the passivation layer 93 And contacting the first electrode 94 of the p-type doping region 914 and at least one second electrode 95 that contacts the n-type doping region 915 through the passivation layer 93. The main feature of the back contact solar cell is that the first electrode 94 and the second electrode 95 are located on the back side 912 side of the substrate 91. The front surface 911 of the battery is not provided with an electrode, so that the light receiving area can be prevented from being blocked. Increase the amount of light entering the front of the battery.

Wherein, the passivation layer 93 has a plurality of openings 931, which can be divided The first electrode 94 and the second electrode 95 are not allowed to pass through to contact the p-type doping region 914 and the n-type doping region 915. The passivation layer 93 is mainly formed by depositing a film of a continuous complete passivation layer 93, and then forming the plurality of openings 931 by laser etching, but the plurality of openings 931 must penetrate the passivation layer 93. The upper and lower surfaces are so easily caused that the p-type doping region 914 and the n-type doping region 915 are also damaged by the laser, resulting in poor photoelectric conversion efficiency of the battery, and thus the known battery structure and manufacturing method need to be improved.

Accordingly, it is an object of the present invention to provide a solar cell, a module thereof, and a method of fabricating the same that can maintain the quality of the film layer and improve the photoelectric conversion efficiency.

Therefore, the solar cell of the present invention comprises: a substrate including a first surface and a second surface opposite to each other, a first doping region and a second doping region on the second surface of different conductivity types; a passivation layer on the second surface and covering the first doped region and the second doped region, a plurality of barrier layers, a first electrode, and a second electrode. The plurality of barrier layers are respectively spaced apart on the second surface, and an opening between the two adjacent barrier layers is formed to expose the second surface. The first electrode and the second electrode respectively extend on the plurality of barrier layers and pass through the opening to respectively contact the first doping region and the second doping region, wherein the first electrode and the second electrode are At least one of the materials includes a component that will burn through the passivation layer.

The solar cell module of the present invention comprises: a first plate and a second plate disposed opposite each other, at least one as described above and disposed on the first a solar cell between the sheet and the second sheet, and a package between the first sheet and the second sheet and contacting the solar cell.

The method for manufacturing a solar cell of the present invention comprises: providing a substrate, wherein the substrate includes a first surface and a second surface opposite to each other. A first doped region and a second doped region of different conductivity types are formed on the second surface of the substrate. Forming a passivation layer on the second surface and covering the first doped region and the second doped region. A plurality of barrier layers are respectively arranged at intervals on the second surface. Forming a first electrode and a second electrode, the first electrode and the second electrode respectively extending on the plurality of barrier layers and contacting the first doping region and the second doping region respectively, wherein the first electrode The material of at least one of the electrode and the second electrode comprises a component that will burn through the passivation layer.

The effect of the present invention is that the barrier layer is used as a barrier between the doped region and the electrode, and the material of at least one of the first electrode and the second electrode can be used to burn through the passivation layer to make the electrode The material can burn through the passivation layer in the sintering process to contact the first doped region and the second doped region to achieve electrical connection between the electrode and the doped region. The invention can avoid the problem that the conventional passivation layer performs the laser opening process to damage the doped region. Therefore, the battery structure of the invention is innovative and the film quality is good, and the photoelectric conversion efficiency can be improved.

1‧‧‧ first plate

2‧‧‧Second plate

3‧‧‧Solar battery

31‧‧‧Substrate

311‧‧‧ first side

312‧‧‧ second side

313‧‧‧Semiconductor doped layer

314‧‧‧Anti-reflective layer

315‧‧‧Area

316‧‧‧through holes

32‧‧‧First doped area

33‧‧‧Second doped area

34‧‧‧ Passivation layer

341‧‧‧Burn through

342‧‧‧First passivation zone

343‧‧‧second passivation zone

35‧‧‧Barrier

350‧‧‧ openings

35‧‧‧Dielectric layer

352‧‧‧metal layer

36‧‧‧First electrode

360‧‧‧First connecting electrode

37‧‧‧second electrode

370‧‧‧Second connection electrode

4‧‧‧Package

5‧‧‧welding wire

61‧‧‧First direction

62‧‧‧second direction

71‧‧‧Dielectric film

D‧‧‧thickness

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic cross-sectional view of a known solar cell; FIG. 2 is a first embodiment of the solar cell module of the present invention. Preferred embodiment 3 is a schematic side view of a solar cell of the first preferred embodiment; FIG. 4 is a partial cross-sectional view taken along line AA of FIG. 3, the back side of the solar cell is facing upward for ease of understanding. Figure 5 is a partial cross-sectional view taken along line BB of Figure 3, for ease of understanding, the back side of the solar cell is drawn upwards; Figure 6 is a first preferred embodiment of the method of fabricating the solar cell of the present invention FIG. 7 is a flow chart of another cross-sectional position of the first preferred embodiment of the manufacturing method, and FIG. 7 is a schematic view of the cross-sectional view of FIG. The steps are the same, but the cross-sectional position of FIG. 7 is shown by the BB line of FIG. 3. FIG. 8 is a rear view of a second preferred embodiment of the solar cell of the present invention; FIG. 9 is the second preferred embodiment. FIG. 10 is a partial cross-sectional view taken along line CC of FIG. 8. For ease of understanding, the back side of the solar cell is drawn upward; FIG. 11 is a partial cross-sectional view taken along line DD of FIG. For ease of understanding, The back-up battery can draw the male; FIG. 12 is a flowchart of a second preferred embodiment of a method for manufacturing a solar cell of the present invention, a schematic, cross-sectional view of the FIG. 12 position 8 of the C-C line shown in FIG.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 2, a first preferred embodiment of the solar cell module of the present invention comprises: a first plate 1 and a second plate 2 disposed opposite each other, and a plurality of arrays arranged on the first plate 1 and the second a solar cell 3 between the sheets 2, at least one encapsulant 4 located between the first sheet 1 and the second sheet 2 and contacting the plurality of solar cells 3, and a plurality of strips for connecting the plurality of solar cells 3 Ribbon strip 5 (ribbon).

The first plate 1 and the second plate 2 are not particularly limited in implementation, and a glass or plastic plate may be used, and the plate on one side of the light receiving surface of the battery must be permeable to light. The material of the encapsulant 4 is, for example, a light transmissive ethylene vinyl acetate copolymer (EVA), or other related materials that can be used for solar cell module packaging.

The structures of the plurality of solar cells 3 of the present embodiment are the same, and only one of them will be described below as an example. However, it is necessary that several batteries in the same module are not identical in structure.

Referring to FIGS. 3, 4, and 5, the solar cell 3 includes a substrate 31, a plurality of first doping regions 32, a plurality of second doping regions 33, a passivation layer 34, a plurality of barrier layers 35, and a plurality of An electrode 36 and a plurality of second electrodes 37.

The substrate 31 includes a first surface 311 and a second surface 312 opposite to each other. The substrate 31 of the embodiment is an n-type semiconductor germanium substrate, the first surface 311 is a light incident surface, and the second surface 312 is a back surface (for convenience in the figure) I mean, draw the battery with the back facing up). A semiconductor doped layer 313 can be disposed on the first surface 311 side of the substrate 31, which is an n-type semiconductor having a carrier concentration greater than that of the substrate 31, thereby forming a front surface electric field (FSF), which can be improved. Carrier collection rate and photoelectric conversion efficiency. In the case where the substrate 31 is a p-type semiconductor substrate, the semiconductor doping layer 313 is a p-type semiconductor having a carrier concentration larger than that of the substrate 31. An anti-reflection layer 314 may be selectively disposed on the surface of the semiconductor doped layer 313, such as tantalum nitride (SiNx), for increasing the incident amount of light and reducing the surface recombination velocity (SRV). ).

The plurality of first doped regions 32 are located on the second surface 312 of the substrate 31 and both extend along a first direction 61 and are spaced apart from each other along a second direction 62 perpendicular to the first direction 61. The plurality of first doping regions 32 are n-type semiconductors, and the carrier concentration is greater than the substrate 31. The shape and distribution position of the plurality of first doping regions 32 need not be limited in the implementation of the present invention.

The plurality of second doping regions 33 are located on the second surface 312 of the substrate 31 and extend along the first direction 61. The plurality of second doped regions 33 are respectively spaced apart from the plurality of first doped regions 32 in the second direction 62. The plurality of second doped regions 33 are p-type semiconductors having a conductive form different from the plurality of first doped regions 32. The shape and distribution position of the plurality of second doping regions 33 need not be limited in the implementation of the present invention.

The passivation layer 34 is disposed on the second surface 312 and covers the plurality of first doping regions 32 and the plurality of second doping regions 33. The passivation layer 34 of the embodiment is mainly distributed on the second surface 312. By the plurality of barrier layers 35, the A plurality of first electrodes 36 and a region covered by the plurality of second electrodes 37. The material of the passivation layer 34 may be an oxide, a nitride or a combination of the above materials, and is used for passivating and repairing the surface of the substrate 31 to reduce Dangling Bond and defects of the surface, thereby reducing carrier traps (Trap) ) and reduce the surface recombination rate of the carrier to improve the photoelectric conversion efficiency of the battery.

As shown in FIG. 3, the plurality of barrier layers 35 are spaced apart along the second direction 62, and are spaced apart along the first direction 61 on the second surface 312, that is, the plurality of barrier layers 35 are two-dimensional. The array is arranged such that there is an opening 350 between the two adjacent barrier layers 35 that exposes the second side 312 of the substrate 31. The material of the plurality of barrier layers 35 and the passivation layer 34 may be the same or different. Each of the barrier layers 35 may include only one material, or may be formed by stacking at least two layers of different materials. Specifically, each of the barrier layers 35 of the present embodiment includes a dielectric layer 351 and a metal layer 352. The dielectric layer 351 is located between the metal layer 352 and the second surface 312 of the substrate 31. The material of the electric layer 351 is the same as the material of the passivation layer 34. The metal layer 352 does not include a component that will fire through the dielectric layer 351. In addition, the plurality of barrier layers 35 are arranged along the extending direction of the first electrode 36 and the second electrode 37 (ie, the first direction 61), and along the vertical direction of the first electrode 36 and the second The directions in which the electrodes 37 extend in the direction (ie, the second direction 62) are spaced apart.

Further, the second surface 312 of the substrate 31 of the present embodiment has a plurality of regions 315 corresponding to the plurality of openings 350 and not covered by the first electrode 36 and the second electrode 37, and the portion of the passivation layer 34 is also It extends over the plurality of regions 315.

The plurality of first electrodes 36 and the plurality of second electrodes 37 are staggered along the second direction 62 and extend along the first direction 61 on the plurality of barrier layers 35 and pass through the plurality of openings 350. The plurality of first doping regions 32 and the plurality of second doping regions 33 are respectively contacted. The material of at least one of the plurality of first electrodes 36 and the plurality of second electrodes 37 includes a component that will burn through the passivation layer 34. In addition, FIG. 4 illustrates a state in which a first electrode 36 contacts one of the first doping regions 32 via the plurality of openings 350 in the first direction 61; and the second electrode 37 is in the first direction. The state in which the second doping region 33 is contacted via the opening 350 is similar to that of FIG. 4 and therefore will not be further illustrated.

In this embodiment, the first connecting electrodes 360 are connected to one ends of the plurality of first electrodes 36 to electrically connect the plurality of first electrodes 36; the second connecting electrode 370 is connected to the number One end of the second electrode 37 electrically connects the plurality of second electrodes 37. The back electrode design of the present embodiment is referred to as an interdigitated back electrode, and since the electrodes of the embodiment are all disposed on the second surface 312 of the substrate 31, the first surface 311 is not provided with an electrically conductive electrode. The battery of this embodiment is an Interdigitated Back Contact (IBC) solar cell.

The method of manufacturing a solar cell of the present invention comprises the steps of providing the substrate 31. The plurality of first doping regions 32 and the plurality of second doping regions 33 of different conductivity types are formed on the second surface 312 of the substrate 31. The passivation layer 34, the plurality of barrier layers 35, the plurality of first electrodes 36, and the plurality of second electrodes 37 are formed. The step of forming the passivation layer 34 and the plurality of barrier layers 35 may be performed simultaneously or separately. The embodiment describes a method of manufacturing the battery of the first preferred embodiment.

Referring to Figures 3, 6, and 7, a first preferred embodiment of the method of fabricating a solar cell of the present invention comprises:

Step 1 : The substrate 31 is provided, and the plurality of first doping regions 32 and the plurality of second doping regions 33 of different conductivity types are formed on the second surface 312 of the substrate 31 . The plurality of first doping regions 32 can form a heavily doped n-type semiconductor by performing a diffusion process (eg, phosphorus diffusion) in a local region of the second surface 312 of the substrate 31. The plurality of second doping regions 33 can form a heavily doped p-type semiconductor by performing a diffusion process (eg, boron diffusion) in a local region of the second surface 312 of the substrate 31. Further, the semiconductor doping layer 313 and the anti-reflection layer 314 are formed on the first surface 311 of the substrate 31.

Step 2: forming the passivation layer 34 and the plurality of barrier layers 35 on the second surface 312 of the substrate 31. Specifically, the passivation layer 34 of the present embodiment and the dielectric layer 351 of each of the barrier layers 35 can be formed by the same step. For example, a continuous film-like dielectric can be formed on the second surface 312 by vacuum coating. An electric film 71 covering the plurality of first doping regions 32 and the plurality of second doping regions 33, and then forming a plurality of along the first direction 61 and along the dielectric film 71 The second direction 62 is a metal layer 352 that is spaced apart. Each of the dielectric films 71 is located between the plurality of metal layers 352 and the second surface 312, and the portions corresponding to the plurality of metal layers 352 respectively become the dielectric layer of each of the barrier layers 35 of the present invention. The electric layer 351, therefore, each of the metal layer 352 and the dielectric layer 351 of the dielectric film 71 between the each metal layer 352 and the second surface 312 together form one of the barrier layers 35, and The dielectric film 71 does not correspond to The portion of the plurality of metal layers 352 serves as the passivation layer 34. The metal layer 352 can be formed by screen printing, inkjet printing, vacuum coating, or the like. When formed by a screen printing method, the metal paste for screen printing is, for example, an aluminum-containing conductive paste.

Step 3: forming the plurality of first electrodes 36 and the plurality of second electrodes 37, so that the plurality of first electrodes 36 and the plurality of second electrodes 37 can respectively pass through the passivation layer 34 to contact the plurality of A doped region 32 and the plurality of second doped regions 33. Specifically, in this step, the predetermined position on the passivation layer 34 and the plurality of barrier layers 35 may be covered by a screen printing method for forming the conductive of the plurality of first electrodes 36 and the plurality of second electrodes 37. a slurry comprising a component that will burn through the passivation layer 34. The ability of the conductive paste to burn through the passivation layer 34 is related to a glass frit in the slurry, such as silver. The conductive paste or a conductive paste containing both silver and aluminum; followed by a high temperature sintering process in which the conductive paste burns through the passivation layer 34 (at this time, the plurality of barrier layers 35) The plurality of openings 350 are completely formed, and the plurality of first doping regions 32 and the plurality of second doping regions 33 are contacted by the passivation layer 34, so that when the conductive paste is cured The plurality of first electrodes 36 and the plurality of second electrodes 37 are formed to respectively contact the plurality of first doping regions 32 and the plurality of second doping regions 33 to complete the fabrication of the contact electrodes of the battery. . It is further explained that the metal layer 352 of the plurality of barrier layers 35 preferably does not contain a component that will burn through the dielectric layer 351, so that the material of the metal layer 352 is prevented from burning through the dielectric layer 351 during the sintering process. Wherein, the manner in which the plurality of barrier layers 35 are arranged is a two-dimensional array arrangement, that is, the plurality of The barrier layer 35 is arranged along the extending direction of the first electrode 36 and the second electrode 37 (ie, the first direction 61), and along the direction perpendicular to the extension of the first electrode 36 and the second electrode 37 (ie, The direction of the second direction 62) is spaced apart to avoid the problem of conduction between the first electrode 36 and the second electrode 37.

The plurality of barrier layers 35 are disposed as barriers between the doped regions and the electrodes, and the materials of the plurality of first electrodes 36 and the plurality of second electrodes 37 are included to burn through the passivation layer 34. The conductive paste can be fired through the passivation layer 34 in the sintering process to contact the plurality of first doped regions 32 and the plurality of second doped regions 33 to electrically connect the electrodes to the doped regions. The effect, and the conductive paste has no burn-through effect on the metal layer 352 of the plurality of barrier layers 35 or the burn-through effect is very weak, so the plurality of barrier layers 35 can effectively treat the plurality of first doped regions 32 with the number The portions of the second doping regions 33 that are not required to be in contact with the electrodes are spaced apart such that the plurality of electrodes contact the plurality of doped regions in a spaced point contact manner. Therefore, the passivation layer 34 of the embodiment does not need to perform the process of using the laser opening in the passivation layer of the prior, so that the problem that the first doping region 32 and the second doping region 33 are damaged by the laser opening process can be avoided. Therefore, the film layer of the present invention has good quality and can improve photoelectric conversion efficiency. Moreover, the plurality of metal layers 352 are made of a metal material and have good conductivity, which helps to improve the conductivity of the electrodes to enhance the photocurrent. The screen printing shape of the plurality of metal layers 352 may be changed according to requirements, and may be a dot, a straight line, a broken line or an arbitrary shape as long as the barrier function can be achieved and a desired relationship can be formed between the electrode and the doped layer. The contact effect can be.

Referring to Figures 8-11, the second preferred embodiment of the solar cell of the present invention The embodiment is substantially the same as the first preferred embodiment except that the passivation layer 34 of the solar cell 3 and the plurality of barrier layers 35 are designed.

Each of the barrier layers 35 of the present embodiment extends along the second direction 62, and any two adjacent barrier layers 35 have a plurality of openings 350 spaced along the second direction 62. Preferably, the thickness d of each of the barrier layers 35 is from 1 μm to 100 μm, thereby achieving an optimized effect of blocking the burn-through of the conductive paste within a certain thickness. The passivation layer 34 of the present embodiment is the same material as the plurality of barrier layers 35. The passivation layer 34 has a plurality of first passivation regions respectively located between the plurality of barrier layers 35 and located on one side of the plurality of openings 350. 342, and an area on the second surface 312 of the substrate 31 except the plurality of first passivation regions 342, the plurality of barrier layers 35, the plurality of first electrodes 36, and the plurality of second electrodes 37 The second passivation region 343 of the present embodiment extends along the periphery of the substrate 31 and surrounds the plurality of barrier layers 35, the plurality of first electrodes 36, and the plurality of second electrodes 37. The thickness of the second passivation region 343 is greater than the thickness of the plurality of first passivation regions 342. Preferably, the thickness of the passivation layer 34 is preferably 10 nm to 1 μm, preferably 70 nm to 200 nm, thereby achieving an effect of passivating the surface of the substrate 31 and improving the photoelectric conversion efficiency in a certain thickness. . The thickness of the passivation layer 34 of the present invention mainly refers to the thickness of the region of the passivation layer 34 that is not located between the plurality of barrier layers 35, which corresponds to the thickness of the second passivation region 343 in this embodiment. On the other hand, the thickness of the plurality of first passivation regions 342 of the present invention may also be the same as the thickness of the second passivation region 343. In this case, the thickness limitation of the passivation layer 34 may refer to the thickness of any portion.

Referring to Figures 9, 10, 11, and 12, a second preferred embodiment of the method for fabricating a solar cell of the present invention is substantially the same as the first preferred embodiment, except that the passivation layer 34 and the plurality are formed. The step of barrier layer 35. In the embodiment, when the passivation layer 34 and the barrier layer 35 are formed, a continuous film-like dielectric film 71 (FIG. 12) is formed on the second surface 312 of the substrate 31, and the dielectric film 71 is further formed. The partial portion is removed, and the partial thickness of the dielectric film 71 is thinned, thereby forming a plurality of layers 341 to be fired through, and the portions between the plurality of layers 341 to be fired through are respectively formed as the plurality of barrier layers 35. The thickness of the plurality of barrier layers 35 in this step is greater than the thickness of the plurality of layers to be fired through. The passivation layer 34 is formed in a region other than the plurality of barrier layers 35 of the dielectric film 71. Preferably, each layer to be fired through the layer 341 has a thickness of 1 nm to 70 nm.

The step of removing the local portion of the dielectric film 71 to form the plurality of layers to be fired through the layer 341 may be performed by laser etching, Etching Paste etching, photolithography etching or mechanical Etching and other methods. Since the etching removal process only forms a partial recess of the dielectric film 71, instead of forming a through hole, the etching depth is not deep, and the second surface 312 of the substrate 31 is not affected, and the plurality of holes are not affected. The first doped region 32 and the plurality of second doped regions 33 cause damage.

Then, the plurality of first electrodes 36 and the plurality of second electrodes 37 are formed. This step is the same as the electrode fabrication step of the first preferred embodiment, and the electrodes can be formed by a screen printing method in combination with a sintering process. Mainly, the electrode paste is coated on the plurality of barrier layers 35 and the plurality of layers to be fired through the screen 341 by using a screen printing method, and the conductive paste burns through the passivation during the sintering process. The plurality of layers 13 to be fired through the layer 34, and the plurality of first electrodes 36 and the plurality of second electrodes 37 formed by the final curing may respectively contact the plurality of first doping regions 32 and the plurality of Second doped region 33.

Since the thickness of the barrier layer 35 of the present embodiment is thick, the conductive paste can be prevented from being burned through, thereby achieving the purpose of blocking. The thickness of the plurality of layers to be fired 341 is relatively thin, so that the conductive paste is completely burned through and the electrodes are in contact with the doped regions. Moreover, in the step of etching the dielectric film 71 to form the plurality of layers to be fired through, the plurality of first doping regions 32 and the plurality of second doping regions 33 are not damaged. The miscellaneous area maintains good quality and can improve photoelectric conversion efficiency.

It should be noted that, in the step of forming the passivation layer 34 and the plurality of barrier layers 35, if only the positions of the dielectric film 71 for forming the plurality of layers to be burned through are to be etched, after etching The thickness of the plurality of barrier layers 35 formed is approximately equal to the thickness of the region of the passivation layer 34 except for the plurality of layers to be burned through, 341, but the plurality of first electrodes 36 and the plurality of second portions are formed. After the electrode 37, since the conductive paste of the electrode also ablate portions of the plurality of barrier layers 35, the thickness of the barrier layer 35 is thinned. Therefore, in the finished battery product, the thickness of the barrier layer 35 is smaller than the passivation. Layer 34 thickness. On the other hand, all the regions of the passivation layer 34 except the plurality of layers to be fired through 341 may also be etched such that the thickness of the plurality of barrier layers 35 is greater than the thickness of the passivation layer 34. In other cases, the thickness of the barrier layer 35 before forming the electrode is greater than the thickness of the passivation layer 34, but the thickness of the barrier layer 35 after forming the electrode is less than the thickness of the passivation layer 34; or the barrier is formed before or after the electrode is formed. Layer 35 thick Although the thickness is thinner, it is greater than the thickness of the passivation layer 34; or the thickness of the barrier layer 35 is less than the thickness of the passivation layer 34 before or after the electrode is formed. Therefore, in the implementation, the appropriate portions of the dielectric film 71 can be appropriately etched, so that the thickness of the plurality of barrier layers 35 in the finally formed battery structure can be greater than the thickness of the passivation layer 34, but can also be less than Or equal to the thickness of the passivation layer 34. The thickness between the respective regions of the passivation layer 34 may be the same or different.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.

3‧‧‧Solar battery

31‧‧‧Substrate

311‧‧‧ first side

312‧‧‧ second side

313‧‧‧Semiconductor doped layer

314‧‧‧Anti-reflective layer

32‧‧‧First doped area

35‧‧‧Barrier

350‧‧‧ openings

351‧‧‧ dielectric layer

352‧‧‧metal layer

36‧‧‧First electrode

61‧‧‧First direction

Claims (5)

  1. A method for manufacturing a solar cell, comprising: providing a substrate, wherein the substrate comprises a first surface and a second surface; and forming a first doping region and a second layer of different conductivity types on the second surface of the substrate a doping region; forming a passivation layer on the second surface and covering the first doping region and the second doping region; forming a plurality of barrier layers respectively spaced on the second surface; forming a first An electrode and a second electrode, the first electrode and the second electrode respectively extending on the plurality of barrier layers and respectively contacting the first doping region and the second doping region, wherein the first electrode and the first electrode The material of at least one of the second electrodes includes a component that will burn through the passivation layer.
  2. The method of manufacturing a solar cell according to claim 1, wherein the plurality of barrier layers are made of the same material as the passivation layer.
  3. The method of manufacturing a solar cell according to claim 1, wherein, when the passivation layer and the barrier layer are formed, a continuous film-shaped dielectric film is formed on the second surface, and then the dielectric film is partially The portion is removed to form a plurality of spaced-apart layers to be fired, the plurality of barrier layers being respectively located between the plurality of layers to be fired through, and the thickness of the plurality of barrier layers is greater than the plurality of layers to be burned through a thickness, a region of the dielectric film other than the plurality of barrier layers is the passivation layer; forming the first electrode and In the second electrode, a conductive paste is coated on the plurality of barrier layers and the plurality of layers to be fired through the sintering process, and the conductive paste is burned through the plurality of layers to be fired through the sintering process. The first electrode and the second electrode are formed after the slurry is cured.
  4. The method of manufacturing a solar cell according to claim 1, wherein the plurality of barrier layers are arranged at intervals along the extending direction of the first electrode, and are arranged at intervals in a direction perpendicular to a direction in which the first electrode extends.
  5. The method of manufacturing a solar cell according to claim 4, wherein, when the passivation layer and the barrier layer are formed, a continuous film-like dielectric film is formed on the second surface, and then the dielectric film is further formed. Forming a plurality of separately arranged metal layers, wherein each of the metal layers and a dielectric layer of the dielectric film between the each of the metal layers and the second surface together form one of the barrier layers, and a portion of the dielectric film that does not correspond to the plurality of metal layers serves as the passivation layer; and when the first electrode and the second electrode are formed, a conductive paste is coated on the plurality of barrier layers and the passivation layer And passing through the sintering process to burn the conductive paste through the passivation layer, and the conductive paste forms a first electrode and the second electrode after curing.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
CN101622717A (en) * 2006-09-29 2010-01-06 可再生能源公司 Back contacted solar cell
TWM421597U (en) * 2011-08-31 2012-01-21 Apollo Solar Energy Co Ltd Solar energy conversion plate structure
US8395043B2 (en) * 2009-06-02 2013-03-12 Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh Solar cell comprising neighboring electrically insulating passivation regions having high surface charges of opposing polarities and production method
TW201338181A (en) * 2012-03-12 2013-09-16 Motech Ind Inc Back contact solar cells

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
CN101622717A (en) * 2006-09-29 2010-01-06 可再生能源公司 Back contacted solar cell
US8395043B2 (en) * 2009-06-02 2013-03-12 Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh Solar cell comprising neighboring electrically insulating passivation regions having high surface charges of opposing polarities and production method
TWM421597U (en) * 2011-08-31 2012-01-21 Apollo Solar Energy Co Ltd Solar energy conversion plate structure
TW201338181A (en) * 2012-03-12 2013-09-16 Motech Ind Inc Back contact solar cells

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