TWI612316B - High-Lower Temperature Switch Test Module - Google Patents

High-Lower Temperature Switch Test Module Download PDF

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TWI612316B
TWI612316B TW106116842A TW106116842A TWI612316B TW I612316 B TWI612316 B TW I612316B TW 106116842 A TW106116842 A TW 106116842A TW 106116842 A TW106116842 A TW 106116842A TW I612316 B TWI612316 B TW I612316B
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cavity
inner cavity
low temperature
test
heat exchange
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TW106116842A
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TW201901172A (en
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詹勳亮
蔡宗益
張育傑
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京元電子股份有限公司
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Abstract

本發明之高低溫切換測試模組括有:一內腔體、一測試載板、複數測試座、一外腔體、一熱交換單元以及一控制單元。其中,內腔體具有至少一進氣通道及至少一排氣通道,測試載板設置於內腔體內,複數測試座設置於測試載板上,用以置放複數待測晶片;外腔體包覆內腔體之上方、下方及側邊,具有至少一進氣通道及至少一排氣通道,用以對該內腔體加熱或冷卻;熱交換單元分別與內腔體及外腔體之該至少一進氣通道相連接;控制單元電連接熱交換單元;內腔體內具有一導流罩,導流罩具有複數導流孔,用以導引熱交換單元所提供之氣體對測試載板加熱或冷卻。藉此,可大幅縮短待測晶片之高低溫測試時間,增加生產效率。The high and low temperature switching test module of the present invention comprises: an inner cavity, a test carrier, a plurality of test sockets, an outer cavity, a heat exchange unit, and a control unit. The inner cavity has at least one air inlet channel and at least one air exhaust channel, the test carrier is disposed in the inner cavity, and the plurality of test sockets are disposed on the test carrier for placing the plurality of wafers to be tested; the outer cavity package The upper, lower and side sides of the inner cavity have at least one air inlet channel and at least one air exhaust channel for heating or cooling the inner cavity; the heat exchange unit and the inner cavity and the outer cavity respectively At least one air inlet channel is connected; the control unit is electrically connected to the heat exchange unit; the inner cavity has a flow guiding cover, and the air guiding cover has a plurality of air guiding holes for guiding the gas provided by the heat exchange unit to heat the test carrier Or cool down. Thereby, the high and low temperature test time of the wafer to be tested can be greatly shortened, and the production efficiency is increased.

Description

高低溫切換測試模組High and low temperature switching test module

本發明係關於一種高低溫切換測試模組,尤指一種適用於可快速高低溫度切換之測試模組。The invention relates to a high and low temperature switching test module, in particular to a test module suitable for fast high and low temperature switching.

目前市面上一些電子元件、或晶片封裝體,如積體電路,常以小型化電子元件如晶片之形式安裝於由若干主要電路元件構成之電路中,以形成連續完整電路之功能。其中,為確保積體電路模組在使用時的可靠性,積體電路模組內所安裝使用之晶片,在其被安裝或使用之前都要進行高低溫測試。亦即,對晶片進行長時間的高低溫運作,可使原本就存在有缺陷之晶片加速儘快失效,從而將有缺陷之晶片篩選並淘汰掉。At present, some electronic components or chip packages on the market, such as integrated circuits, are often mounted in a circuit composed of several main circuit components in the form of miniaturized electronic components such as chips to form a continuous and complete circuit. Among them, in order to ensure the reliability of the integrated circuit module during use, the wafer used in the integrated circuit module is subjected to high and low temperature tests before being installed or used. That is to say, the long-term high and low temperature operation of the wafer can accelerate the accelerated failure of the originally defective wafer, thereby screening and eliminating the defective wafer.

目前對晶片作高低溫測試之模組,有些是採用致冷晶片與熱風產生器於腔體內對待測晶片作低溫與高溫測試,由於腔體之體積大,腔體內溫度不易由低溫變換至高溫,需花費大量時間方能完成晶片之高溫與低溫測試,生產效率很低。此外,致冷晶片之溫度變化也需花費較多時間方能穩定,導致測試時間需較長,致冷晶片之價格也較昴貴,成本也高,並非十分理想,尚有改善的空間。At present, some modules for high and low temperature testing of wafers are tested by using a cold chip and a hot air generator in the cavity for low temperature and high temperature testing. Due to the large volume of the cavity, the temperature inside the cavity is not easily changed from low temperature to high temperature. It takes a lot of time to complete the high temperature and low temperature testing of the wafer, and the production efficiency is very low. In addition, the temperature change of the cooled wafer also takes a long time to stabilize, resulting in a longer test time, a higher price of the cooled wafer, and a higher cost, which is not ideal, and there is room for improvement.

發明人緣因於此,本於積極發明創作之精神,亟思一種可以解決上述問題之「高低溫切換測試模組」,幾經研究實驗終至完成本發明。Because of this, in the spirit of active invention and creation, we have thought of a "high and low temperature switching test module" that can solve the above problems, and finally completed the present invention after several research experiments.

本發明之主要目的係在提供一種高低溫切換測試模組,可迅速調變並維持內腔體的測試溫度,並可提供內腔體穩定且不易飄移的測試環境溫度及壓力,可大幅縮短待測晶片之高低溫測試時間,增加生產效率。此外,本發明之高低溫切換測試模組也可搭配不同之載具,可彈性配置於各種不同型式的測試分類機(Ic Test Handler)。The main object of the present invention is to provide a high and low temperature switching test module, which can quickly adjust and maintain the test temperature of the inner cavity, and can provide the test environment temperature and pressure which are stable and difficult to drift inside the cavity, and can be greatly shortened. Test the high and low temperature test time of the wafer to increase production efficiency. In addition, the high and low temperature switching test module of the present invention can also be combined with different vehicles, and can be flexibly configured in various types of test classifiers (Ic Test Handler).

為達成上述之目的,本發明之高低溫切換測試模組括有:一內腔體、一測試載板、複數測試座、一外腔體、一熱交換單元以及一控制單元。其中,內腔體具有至少一進氣通道及至少一排氣通道,測試載板設置於內腔體內,複數測試座設置於測試載板上並穿設多個探針,用以置放複數待測晶片;外腔體包覆內腔體之上方、下方及側邊,具有至少一進氣通道及至少一排氣通道,用以對該內腔體加熱或冷卻;熱交換單元分別與內腔體及外腔體之該至少一進氣通道相連接;控制單元電連接熱交換單元;內腔體內具有一導流罩,導流罩具有複數導流孔,用以導引熱交換單元所提供之氣體對測試載板加熱或冷卻。To achieve the above object, the high and low temperature switching test module of the present invention comprises: an inner cavity, a test carrier, a plurality of test sockets, an outer cavity, a heat exchange unit, and a control unit. The inner cavity has at least one air inlet channel and at least one air exhaust channel, the test carrier is disposed in the inner cavity, and the plurality of test sockets are disposed on the test carrier and are provided with a plurality of probes for placing the plurality of probes Measuring the wafer; the outer cavity covering the upper, lower and side sides of the inner cavity, having at least one air inlet channel and at least one exhaust channel for heating or cooling the inner cavity; the heat exchange unit and the inner cavity respectively The at least one air inlet channel of the body and the outer cavity are connected; the control unit is electrically connected to the heat exchange unit; the inner cavity has a flow guiding cover, and the air guiding cover has a plurality of air guiding holes for guiding the heat exchange unit to provide The gas heats or cools the test carrier.

上述內腔體之導流罩上之複數導流孔可分別對應設置於該複數待測晶片上方,藉此,可迅速調變並維持內腔體的測試溫度,可大幅縮短待測晶片之高低溫測試時間。The plurality of flow guiding holes on the flow guiding cover of the inner cavity can be respectively disposed above the plurality of wafers to be tested, thereby rapidly adjusting and maintaining the testing temperature of the inner cavity, and the height of the wafer to be tested can be greatly shortened Low temperature test time.

上述內腔體之導流罩可具有至少一隔板,該至少一隔板可用以導引熱交換單元所提供之氣體由該至少一進氣通道進入內腔體,通過複數導流孔後再從該至少一排氣通道排出,確保熱交換單元所提供之氣體皆有進入內腔體。亦即,熱交換單元所提供之氣體先進入該至少一隔板之一側,通過導流罩之複數導流孔後,再從該至少一隔板之另一側排出。The inner shroud of the inner cavity may have at least one baffle, and the at least one baffle may be used to guide the gas provided by the heat exchange unit to enter the inner cavity from the at least one intake passage, and then pass through the plurality of diversion holes. Discharge from the at least one exhaust passage to ensure that the gas provided by the heat exchange unit enters the inner cavity. That is, the gas supplied from the heat exchange unit first enters one side of the at least one partition, passes through the plurality of flow guiding holes of the shroud, and then discharges from the other side of the at least one partition.

上述外腔體可包括一上腔體及一下腔體,且該上腔體可具有至少一進氣通道及至少一排氣通道,該下腔體可具有至少一進氣通道及至少一排氣通道,亦即,該上腔體與下腔體各別具有單獨之進氣通道與排氣通道。The outer cavity may include an upper cavity and a lower cavity, and the upper cavity may have at least one intake passage and at least one exhaust passage, and the lower cavity may have at least one intake passage and at least one exhaust The passage, that is, the upper chamber and the lower chamber respectively have separate intake passages and exhaust passages.

上述下腔體之導流罩上之複數導流孔可分別對應設置於該複數待測晶片下方,藉此,可迅速調變並維持內腔體的測試溫度,可大幅縮短待測晶片之高低溫測試時間。The plurality of air guiding holes on the shroud of the lower cavity can be respectively disposed under the plurality of wafers to be tested, thereby rapidly adjusting and maintaining the test temperature of the inner cavity, and the height of the wafer to be tested can be greatly shortened Low temperature test time.

上述下腔體之導流罩可具有至少一隔板,該至少一隔板可用以導引熱交換單元所提供之氣體由該至少一進氣通道進入下腔體,通過複數導流孔後再從該至少一排氣通道排出,確保熱交換單元所提供之氣體皆有進入下腔體與測試載板相鄰區域。亦即,熱交換單元所提供之氣體先進入該至少一隔板之一側,通過導流罩之複數導流孔後,再從該至少一隔板之另一側排出。The shroud of the lower cavity may have at least one baffle, and the at least one baffle may be used to guide the gas provided by the heat exchange unit from the at least one intake passage into the lower cavity, after passing through the plurality of diversion holes Discharge from the at least one exhaust passage to ensure that the gas provided by the heat exchange unit has an area adjacent to the lower chamber and the test carrier. That is, the gas supplied from the heat exchange unit first enters one side of the at least one partition, passes through the plurality of flow guiding holes of the shroud, and then discharges from the other side of the at least one partition.

上述上腔體可藉由複數鰭片頂抵該內腔體之外側,以進行熱交換,藉此,可增加上腔體與內腔體接觸面積,讓上腔體與內腔體快速進行熱交換。The upper cavity can be heat-exchanged by the plurality of fins abutting the outer side of the inner cavity, thereby increasing the contact area between the upper cavity and the inner cavity, and allowing the upper cavity and the inner cavity to rapidly heat up. exchange.

上述上腔體可具有一進氣通道及二排氣通道,該進氣通道位於該測試載板之中央,該二排氣通道分別位於該測試載板之二端側,藉此,可快速進行熱交換。The upper cavity may have an intake passage and two exhaust passages, the intake passage being located at a center of the test carrier, and the two exhaust passages are respectively located at two end sides of the test carrier, thereby being fast Heat exchange.

上述下腔體可具有一進氣通道及二排氣通道,該進氣通道位於該測試載板之中央,該二排氣通道分別位於該測試載板之二端側,藉此,可快速進行熱交換。The lower cavity may have an intake passage and two exhaust passages, and the intake passage is located at a center of the test carrier, and the two exhaust passages are respectively located at two end sides of the test carrier, thereby being fast Heat exchange.

上述上腔體可藉由一壓缸帶動上下滑移,用以與該下腔體密合或分離。The upper cavity can be driven up and down by a pressure cylinder for sealing or separating from the lower cavity.

請參閱圖1、圖2及圖3,其分別為本發明一較佳實施例之高低溫切換測試模組示意圖及二不同視角剖面圖。本實施例之高低溫切換測試模組包括有:一內腔體20、一具有一上腔體41及一下腔體46之外腔體40、一測試載板30、複數測試座32、一熱交換單元50及一控制單元60。其中,測試載板30分隔形成上腔體41、下腔體46及內腔體20,而內腔體20具有至少一進氣通道21及至少一排氣通道22,複數測試座32設置於測試載板30上並穿設多個探針322,用以置放複數待測晶片34;由上腔體41及下腔體46組成之外腔體40則包覆內腔體20之上方、下方及側邊,且上腔體41與下腔體46分別具有至少一進氣通道411,461及至少一排氣通道412,462,用以對內腔體20加熱或冷卻。Please refer to FIG. 1 , FIG. 2 and FIG. 3 , which are schematic diagrams of high and low temperature switching test modules and two different perspective views of a preferred embodiment of the present invention. The high and low temperature switching test module of the embodiment includes: an inner cavity 20, a cavity 40 having an upper cavity 41 and a lower cavity 46, a test carrier 30, a plurality of test sockets 32, and a heat The switching unit 50 and a control unit 60. The test carrier 30 is divided to form an upper cavity 41, a lower cavity 46 and an inner cavity 20, and the inner cavity 20 has at least one air inlet channel 21 and at least one exhaust channel 22, and the plurality of test sockets 32 are set in the test. A plurality of probes 322 are disposed on the carrier 30 for placing a plurality of wafers 34 to be tested; and an outer cavity 40 is formed by the upper cavity 41 and the lower cavity 46 to cover the upper and lower sides of the inner cavity 20. And the side, and the upper cavity 41 and the lower cavity 46 respectively have at least one intake passage 411, 461 and at least one exhaust passage 412, 462 for heating or cooling the inner cavity 20.

在本實施例中,內腔體20具有二進氣通道21及四排氣通道22,內腔體20之二進氣通道21靠近測試載板30之中間,而四排氣通道22分別位於測試載板30之二端側。此外,上腔體41具有一進氣通道411及二排氣通道412,如圖2所示,上腔體41之進氣通道411位於測試載板30之中央,而二排氣通道412分別位於測試載板30之二端側。另外,下腔體46具有一進氣通道461及二排氣通道462,如圖2所示,下腔體46之進氣通道461位於測試載板30之中央,而二排氣通道462分別位於測試載板30之二端側。In this embodiment, the inner cavity 20 has two intake passages 21 and four exhaust passages 22. The two intake passages 21 of the inner cavity 20 are adjacent to the middle of the test carrier 30, and the four exhaust passages 22 are respectively located in the test. The two end sides of the carrier 30. In addition, the upper cavity 41 has an intake passage 411 and two exhaust passages 412. As shown in FIG. 2, the intake passage 411 of the upper cavity 41 is located at the center of the test carrier 30, and the two exhaust passages 412 are respectively located. Test the two end sides of the carrier 30. In addition, the lower cavity 46 has an intake passage 461 and two exhaust passages 462. As shown in FIG. 2, the intake passage 461 of the lower cavity 46 is located at the center of the test carrier 30, and the two exhaust passages 462 are respectively located. Test the two end sides of the carrier 30.

如圖1所示,熱交換單元50分別與內腔體20之二進氣通道21、上腔體41之進氣通道411及下腔體46之進氣通道461相連接;控制單元60電連接熱交換單元50。當特定溫度與壓力之氣體經由熱交換單元50分別灌入內腔體20及由上腔體41與下腔體46所組成之外腔體40,因外腔體40包覆內腔體20之上方、下方及側邊,故內腔體20之溫度變化,可透過外腔體40迅速進行熱交換,可確保內腔體20達到並維持控制單元60所設定的溫度。本實施例可在短時間內內完成內腔體20與外腔體40溫度之變換,故待測晶片34在高低溫切換時,可大幅縮短暫態溫度轉換的時間,增加測試效率。As shown in FIG. 1, the heat exchange unit 50 is respectively connected to the two intake passages 21 of the inner cavity 20, the intake passage 411 of the upper cavity 41, and the intake passage 461 of the lower cavity 46; the control unit 60 is electrically connected. Heat exchange unit 50. When a specific temperature and pressure gas is respectively injected into the inner cavity 20 via the heat exchange unit 50 and the outer cavity 40 is composed of the upper cavity 41 and the lower cavity 46, the outer cavity 40 covers the inner cavity 20 The upper, lower and side sides, so that the temperature of the inner cavity 20 changes, the heat exchange can be quickly performed through the outer cavity 40, and the inner cavity 20 can be ensured to reach and maintain the temperature set by the control unit 60. In this embodiment, the temperature of the inner cavity 20 and the outer cavity 40 can be changed in a short time. Therefore, when the wafer 34 to be tested is switched between high and low temperature, the transient temperature conversion time can be greatly shortened, and the test efficiency is increased.

此外,如圖2與圖3所示,內腔體20內具有一導流罩25,其上具有複數導流孔27,且該複數導流孔27係分別對應設置於該複數待測晶片34上方,藉此,導流孔27可導引熱交換單元50所提供之氣體經由二進氣通道21對測試載板30上之複數待測晶片34加熱或冷卻。此外,外腔體40之下腔體46也具有一導流罩47,其上具有複數導流孔49,導流孔49可導引熱交換單元50所提供之氣體經由進氣通道461對測試載板30加熱或冷卻。In addition, as shown in FIG. 2 and FIG. 3, the inner cavity 20 has a flow guiding cover 25 having a plurality of guiding holes 27 thereon, and the plurality of guiding holes 27 are respectively disposed corresponding to the plurality of wafers 34 to be tested. Above, thereby, the flow guiding hole 27 can guide the gas supplied from the heat exchange unit 50 to heat or cool the plurality of wafers 34 to be tested on the test carrier 30 via the two intake passages 21. In addition, the lower cavity 46 of the outer cavity 40 also has a flow guiding cover 47 having a plurality of guiding holes 49 thereon, and the guiding holes 49 can guide the gas provided by the heat exchange unit 50 to pass the air inlet passage 461 for testing. The carrier 30 is heated or cooled.

另外,如圖3所示,內腔體20之導流罩25具有至少一隔板26,隔板26可導引熱交換單元50所提供之氣體經由二進氣通道21進入內腔體20,通過複數導流孔27後再從四排氣通道22排出,亦即,熱交換單元50所提供之氣體先進入該隔板26之一側,通過導流罩25之複數導流孔27後,再從該隔板26之另一側排出,藉此讓熱交換單元50所提供之氣體能發揮最大的熱傳效果。又,外腔體40之下腔體46之導流罩47也具有至少一隔板48,可導引熱交換單元50所提供之氣體經由進氣通道461進入下腔體46,通過複數導流孔49後再從排氣通道462排出,亦即,熱交換單元50所提供之氣體先進入該隔板48之一側,通過導流罩47之複數導流孔49後,再從該隔板48之另一側排出,藉此讓熱交換單元50所提供之氣體能發揮最大的熱傳效果。In addition, as shown in FIG. 3, the shroud 25 of the inner cavity 20 has at least one partition 26, and the partition 26 can guide the gas provided by the heat exchange unit 50 to enter the inner cavity 20 via the two intake passages 21, After passing through the plurality of air guiding holes 27, the gas is supplied from the four exhaust passages 22, that is, the gas supplied from the heat exchange unit 50 first enters one side of the partition plate 26, and passes through the plurality of flow guiding holes 27 of the flow guiding cover 25, Further, it is discharged from the other side of the separator 26, whereby the gas supplied from the heat exchange unit 50 can exert the maximum heat transfer effect. Moreover, the shroud 47 of the lower cavity 46 of the outer cavity 40 also has at least one partition 48 for guiding the gas provided by the heat exchange unit 50 to enter the lower cavity 46 via the intake passage 461, through the plurality of diversions. The hole 49 is then discharged from the exhaust passage 462, that is, the gas supplied from the heat exchange unit 50 first enters one side of the partition 48, passes through the plurality of flow guiding holes 49 of the flow guide 47, and then from the partition. The other side of the 48 is discharged, thereby allowing the gas supplied from the heat exchange unit 50 to exert the maximum heat transfer effect.

此外,請一併參閱圖1及圖3,外腔體40之上腔體41並藉由複數鰭片42頂抵內腔體20之外側,以進行熱交換,藉此,可增加上腔體41與內腔體20之接觸面積,讓上腔體41與內腔體20可快速進行熱交換,也可確保內腔體20溫度的均勻性。又,內腔體20及上腔體41係組設於一上基座5上,而下腔體46係組設於一下基座6上,上基座5藉由一壓缸(圖未示)帶動,用以與下基座6密合或分離,亦即,內腔體20及上腔體41與下腔體46係藉由壓缸帶動上下密合或分離,待內腔體20與外腔體40密合後,內腔體20與外腔體40呈密封狀態,特定溫度的氣體分別灌入內腔體20與外腔體40,對待測晶片34進行高低溫測試。In addition, please refer to FIG. 1 and FIG. 3 together, the cavity 41 above the outer cavity 40 and the outer side of the inner cavity 20 by the plurality of fins 42 for heat exchange, thereby increasing the upper cavity The contact area with the inner cavity 20 allows the upper cavity 41 and the inner cavity 20 to be rapidly exchanged for heat, and the temperature uniformity of the inner cavity 20 can also be ensured. Moreover, the inner cavity 20 and the upper cavity 41 are assembled on an upper base 5, and the lower cavity 46 is assembled on the lower base 6, and the upper base 5 is provided by a pressure cylinder (not shown) The inner cavity 20 and the upper cavity 41 and the lower cavity 46 are brought into close contact or separation by the pressure cylinder, and the inner cavity 20 and the inner cavity 20 are driven. After the outer cavity 40 is tightly closed, the inner cavity 20 and the outer cavity 40 are sealed, and gas of a specific temperature is poured into the inner cavity 20 and the outer cavity 40, respectively, and the wafer 34 to be tested is subjected to high and low temperature tests.

藉此,本實施例可迅速調變並維持內腔體20的測試溫度,並可提供內腔體20穩定且不易飄移的測試環境溫度及壓力,可大幅縮短待測晶片34之高低溫測試時間,增加生產效率。此外,本發明之高低溫切換測試模組也可搭配不同之載具,可彈性配置於各種不同型式的測試分類機(Ic Test Handler)。Thereby, the embodiment can quickly adjust and maintain the test temperature of the inner cavity 20, and can provide the test environment temperature and pressure that the inner cavity 20 is stable and not easy to drift, and can greatly shorten the high and low temperature test time of the wafer 34 to be tested. Increase production efficiency. In addition, the high and low temperature switching test module of the present invention can also be combined with different vehicles, and can be flexibly configured in various types of test classifiers (Ic Test Handler).

5‧‧‧上基座
6‧‧‧下基座
20‧‧‧內腔體
21‧‧‧進氣通道
22‧‧‧排氣通道
25‧‧‧導流罩
26‧‧‧隔板
27‧‧‧導流孔
30‧‧‧測試載板
32‧‧‧測試座
34‧‧‧待測晶片
40‧‧‧外腔體
41‧‧‧上腔體
42‧‧‧鰭片
46‧‧‧下腔體
47‧‧‧導流罩
48‧‧‧隔板
49‧‧‧導流孔
50‧‧‧熱交換單元
60‧‧‧控制單元
322‧‧‧探針
411‧‧‧進氣通道
412‧‧‧排氣通道
461‧‧‧進氣通道
462‧‧‧排氣通道
5‧‧‧Upper base
6‧‧‧Lower base
20‧‧‧ internal cavity
21‧‧‧Intake passage
22‧‧‧Exhaust passage
25‧‧‧Shroud
26‧‧‧Baffle
27‧‧‧Inlet
30‧‧‧Test carrier
32‧‧‧ test seat
34‧‧‧Samps to be tested
40‧‧‧External cavity
41‧‧‧Upper cavity
42‧‧‧Fins
46‧‧‧ lower cavity
47‧‧‧Shroud
48‧‧‧Baffle
49‧‧‧Inlet
50‧‧‧Heat exchange unit
60‧‧‧Control unit
322‧‧‧ probe
411‧‧‧Intake passage
412‧‧‧Exhaust passage
461‧‧‧Intake passage
462‧‧‧Exhaust passage

圖1係本發明一較佳實施例之高低溫切換測試模組示意圖。 圖2係本發明一較佳實施例之高低溫切換測試模組之剖面圖。 圖3係本發明一較佳實施例之高低溫切換測試模組之不同視角剖面圖。1 is a schematic diagram of a high and low temperature switching test module according to a preferred embodiment of the present invention. 2 is a cross-sectional view of a high and low temperature switching test module in accordance with a preferred embodiment of the present invention. 3 is a cross-sectional view of a different perspective view of a high and low temperature switching test module in accordance with a preferred embodiment of the present invention.

20‧‧‧內腔體 20‧‧‧ internal cavity

21‧‧‧進氣通道 21‧‧‧Intake passage

22‧‧‧排氣通道 22‧‧‧Exhaust passage

25‧‧‧導流罩 25‧‧‧Shroud

26‧‧‧隔板 26‧‧‧Baffle

30‧‧‧測試載板 30‧‧‧Test carrier

32‧‧‧測試座 32‧‧‧ test seat

34‧‧‧待測晶片 34‧‧‧Samps to be tested

40‧‧‧外腔體 40‧‧‧External cavity

41‧‧‧上腔體 41‧‧‧Upper cavity

46‧‧‧下腔體 46‧‧‧ lower cavity

47‧‧‧導流罩 47‧‧‧Shroud

322‧‧‧探針 322‧‧‧ probe

411‧‧‧進氣通道 411‧‧‧Intake passage

461‧‧‧進氣通道 461‧‧‧Intake passage

462‧‧‧排氣通道 462‧‧‧Exhaust passage

Claims (10)

一種高低溫切換測試模組,包括: 一內腔體,具有至少一進氣通道及至少一排氣通道; 一測試載板,設置於該內腔體內; 複數測試座,係穿設複數個探針,該複數測試座設置於該測試載板上,用以置放複數待測晶片; 一外腔體,包覆該內腔體之上方、下方及側邊,具有至少一進氣通道及至少一排氣通道,用以對該內腔體加熱或冷卻; 一熱交換單元,分別與該內腔體及該外腔體之該至少一進氣通道相連接;以及 一控制單元,電連接該熱交換單元; 其中,該內腔體內具有一導流罩,其上具有複數導流孔,用以導引該熱交換單元所提供之氣體對該測試載板加熱或冷卻。A high and low temperature switching test module includes: an inner cavity having at least one air inlet passage and at least one exhaust passage; a test carrier plate disposed in the inner cavity; and a plurality of test sockets a plurality of test sockets disposed on the test carrier for placing a plurality of wafers to be tested; an outer cavity covering the upper, lower and side sides of the inner cavity, having at least one air inlet passage and at least An exhaust passage for heating or cooling the inner cavity; a heat exchange unit respectively connected to the inner cavity and the at least one intake passage of the outer cavity; and a control unit electrically connecting the The heat exchange unit has a flow guide cover having a plurality of flow guiding holes for guiding the gas provided by the heat exchange unit to heat or cool the test carrier. 如申請專利範圍第1項所述之高低溫切換測試模組,其中,該複數導流孔係分別對應設置於該複數待測晶片上方。The high and low temperature switching test module of claim 1, wherein the plurality of air guiding holes are respectively disposed above the plurality of wafers to be tested. 如申請專利範圍第1項所述之高低溫切換測試模組,其中,該導流罩具有至少一隔板,用以導引該熱交換單元所提供之氣體由該至少一進氣通道進入該內腔體,通過該複數導流孔後再從該至少一排氣通道排出。The high and low temperature switching test module of claim 1, wherein the shroud has at least one partition for guiding gas supplied by the heat exchange unit to enter the gas through the at least one intake passage. The inner cavity passes through the plurality of exhaust holes and is discharged from the at least one exhaust passage. 如申請專利範圍第1項所述之高低溫切換測試模組,其中,該外腔體係包括一上腔體及一下腔體,該上腔體具有至少一進氣通道及至少一排氣通道,該下腔體具有至少一進氣通道及至少一排氣通道。The high and low temperature switching test module of claim 1, wherein the external cavity system comprises an upper cavity and a lower cavity, the upper cavity having at least one intake passage and at least one exhaust passage. The lower cavity has at least one intake passage and at least one exhaust passage. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該下腔體具有一導流罩,其上具有複數導流孔,用以導引該熱交換單元所提供之氣體對該測試載板加熱或冷卻。The high and low temperature switching test module of claim 4, wherein the lower cavity has a flow guiding cover having a plurality of guiding holes for guiding the gas pair provided by the heat exchange unit The test carrier is heated or cooled. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該導流罩具有至少一隔板,用以導引該熱交換單元所提供之氣體由該至少一進氣通道進入該下腔體,通過該複數導流孔後再從該至少一排氣通道排出。The high and low temperature switching test module of claim 4, wherein the shroud has at least one partition for guiding gas supplied from the heat exchange unit to enter the gas through the at least one intake passage. The lower cavity passes through the plurality of exhaust holes and is then discharged from the at least one exhaust passage. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該上腔體係藉由複數鰭片頂抵該內腔體之外側,以進行熱交換。The high and low temperature switching test module of claim 4, wherein the upper cavity system is in contact with the outer side of the inner cavity by a plurality of fins for heat exchange. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該上腔體具有一進氣通道及二排氣通道,該進氣通道位於該測試載板之中央,該二排氣通道分別位於該測試載板之二端側。The high and low temperature switching test module of claim 4, wherein the upper cavity has an intake passage and two exhaust passages, the intake passage being located at a center of the test carrier, the two exhausts The channels are respectively located on the two end sides of the test carrier. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該下腔體具有一進氣通道及二排氣通道,該進氣通道位於該測試載板之中央,該二排氣通道分別位於該測試載板之二端側。The high and low temperature switching test module of claim 4, wherein the lower cavity has an intake passage and two exhaust passages, the intake passage being located at a center of the test carrier, the two exhausts The channels are respectively located on the two end sides of the test carrier. 如申請專利範圍第4項所述之高低溫切換測試模組,其中,該上腔體係藉由一壓缸帶動,用以與該下腔體密合或分離。The high and low temperature switching test module of claim 4, wherein the upper cavity system is driven by a pressure cylinder to be in close contact with or separated from the lower cavity.
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