TWI609838B - 太陽電池元件、太陽電池元件的製造方法以及太陽電池模組 - Google Patents

太陽電池元件、太陽電池元件的製造方法以及太陽電池模組 Download PDF

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Publication number
TWI609838B
TWI609838B TW102126032A TW102126032A TWI609838B TW I609838 B TWI609838 B TW I609838B TW 102126032 A TW102126032 A TW 102126032A TW 102126032 A TW102126032 A TW 102126032A TW I609838 B TWI609838 B TW I609838B
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TW
Taiwan
Prior art keywords
passivation
solar cell
group
passivation layer
cell element
Prior art date
Application number
TW102126032A
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English (en)
Chinese (zh)
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TW201408600A (zh
Inventor
織田明博
吉田誠人
野尻剛
倉田靖
田中徹
足立修一郎
早坂剛
服部孝司
松村三江子
渡邉敬司
森下真年
濱村浩孝
Original Assignee
日立化成股份有限公司
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Publication of TW201408600A publication Critical patent/TW201408600A/zh
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Publication of TWI609838B publication Critical patent/TWI609838B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW102126032A 2012-07-19 2013-07-19 太陽電池元件、太陽電池元件的製造方法以及太陽電池模組 TWI609838B (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2012160336 2012-07-19
JP2012-160336 2012-07-19
JP2012-218389 2012-09-28
JP2012218389 2012-09-28
JP2013-011934 2013-01-25
JP2013011934 2013-01-25
JP2013040152 2013-02-28
JP2013-040153 2013-02-28
JP2013040153 2013-02-28
JP2013-040152 2013-02-28

Publications (2)

Publication Number Publication Date
TW201408600A TW201408600A (zh) 2014-03-01
TWI609838B true TWI609838B (zh) 2018-01-01

Family

ID=49948931

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102126032A TWI609838B (zh) 2012-07-19 2013-07-19 太陽電池元件、太陽電池元件的製造方法以及太陽電池模組

Country Status (4)

Country Link
JP (1) JP6350278B2 (ja)
CN (1) CN104471718A (ja)
TW (1) TWI609838B (ja)
WO (1) WO2014014111A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107665934A (zh) * 2017-09-22 2018-02-06 天合光能股份有限公司 太阳能电池
CN109494261B (zh) * 2018-10-19 2024-06-21 晶澳(扬州)太阳能科技有限公司 硅基太阳能电池及制备方法、光伏组件
AU2019290813B2 (en) * 2018-06-22 2022-07-28 Jingao Solar Co., Ltd. Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly
CN108767022A (zh) * 2018-06-22 2018-11-06 晶澳(扬州)太阳能科技有限公司 P型晶体硅太阳能电池及制备方法、光伏组件
CN112002771B (zh) * 2020-08-25 2022-04-29 东方日升(常州)新能源有限公司 一种掺镓背场的p型掺镓perc电池及其制备方法
CN115581079B (zh) * 2022-11-03 2023-05-23 绍兴建元电力集团有限公司 一种吸光层钝化剂及其制备的钙钛矿太阳能电池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033538A (ja) * 2010-07-28 2012-02-16 Meiji Univ 太陽電池

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP60041878B2 (en) * 1979-02-14 1985-09-19 Sharp Kk Thin film solar cell
JPS5823486A (ja) * 1981-08-04 1983-02-12 Toshiba Corp 太陽電池の製造方法
JPS59178778A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 太陽電池及びその製造方法
JP2000294817A (ja) * 1999-04-09 2000-10-20 Dainippon Printing Co Ltd 太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル
US6548912B1 (en) * 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
JP4883559B2 (ja) * 2006-03-10 2012-02-22 独立行政法人産業技術総合研究所 光電変換電極
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
JP5978564B2 (ja) * 2011-05-26 2016-08-24 日立化成株式会社 半導体基板用パッシベーション膜形成用材料、半導体基板用パッシベーション膜及びその製造方法、並びに太陽電池素子及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033538A (ja) * 2010-07-28 2012-02-16 Meiji Univ 太陽電池

Also Published As

Publication number Publication date
CN104471718A (zh) 2015-03-25
TW201408600A (zh) 2014-03-01
WO2014014111A1 (ja) 2014-01-23
JPWO2014014111A1 (ja) 2016-07-07
JP6350278B2 (ja) 2018-07-04

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