TWI604574B - Laminate, power module substrate, and power module substrate with heatsink - Google Patents

Laminate, power module substrate, and power module substrate with heatsink Download PDF

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TWI604574B
TWI604574B TW103109662A TW103109662A TWI604574B TW I604574 B TWI604574 B TW I604574B TW 103109662 A TW103109662 A TW 103109662A TW 103109662 A TW103109662 A TW 103109662A TW I604574 B TWI604574 B TW I604574B
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layer
aluminum
titanium
metal
heat sink
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TW103109662A
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Chinese (zh)
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TW201503296A (en
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寺伸幸
長友義幸
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三菱綜合材料股份有限公司
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Priority to JP2013052409A priority patent/JP5725061B2/en
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023Thermo-compression bonding
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    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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    • B23K35/005Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a refractory metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/017Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C13/00Alloys based on tin
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C13/00Alloys based on tin
    • C22C13/02Alloys based on tin with antimony or bismuth as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • C22C21/02Alloys based on aluminium with silicon as the next major constituent
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3675Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
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    • B23K2103/00Materials to be soldered, welded or cut
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
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    • B23K2103/00Materials to be soldered, welded or cut
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    • B23K2103/00Materials to be soldered, welded or cut
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Description

接合體、電源模組用基板及附散熱片之電源模組用基板Substrate, substrate for power module, and substrate for power module with heat sink

本發明係有關一種鋁構件、與銅、鎳、或銀所形成之金屬構件被接合而成之接合體、電源模組用基板及附散熱片之電源模組用基板。 The present invention relates to an aluminum member, a bonded body formed by bonding a metal member formed of copper, nickel, or silver, a substrate for a power module, and a substrate for a power module with a heat sink.

本發明根據2013年3月14日於日本提出申請之特願2013-052408號及特願2013-052409號專利申請案來主張優先權,於此處援用其內容。 The present invention claims priority based on Japanese Patent Application No. 2013-052408 and Japanese Patent Application No. 2013-052409, filed on Jan.

LED或電源模組等之半導體裝置係被做成在由導電材料所構成之電路層上接合半導體元件之構造。 A semiconductor device such as an LED or a power supply module is configured to bond a semiconductor element on a circuit layer made of a conductive material.

為了控制風力發電、電動車等電氣車輛等所採用之大電力控制用電源半導體元件,因為發熱量多,所以在作為搭載此之基板,使例如由AlN(氮化鋁)等所構成的陶瓷基板(絕緣層)一方的面、或兩方的面接合導電性優良的金屬板之場合下,從以往就廣泛採用將一方的面的金屬板做成電路層、將另一方的面的金屬板做成金屬層之電源模 組用基板。 In order to control a power semiconductor element for large power control used in an electric vehicle such as a wind power generator or an electric vehicle, since a large amount of heat is generated, a ceramic substrate made of, for example, AlN (aluminum nitride) or the like is mounted as a substrate on which the substrate is mounted. When one surface of the (insulating layer) or a surface of both surfaces is bonded to a metal plate having excellent conductivity, it has been conventionally used to form a metal plate of one surface and a metal plate of the other surface. Metal mold The substrate is used.

例如,專利文獻1所示之電源模組,係做成具備在陶瓷基板的一方的面形成由鋁(Al)所構成的電路層(鋁構件)及在另一方的面形成由鋁所構成的金屬層之電源模組用基板,與在此電路層上介著焊錫材被接合之半導體元件之構造。接著,做成在電源模組用基板的下側接合著散熱片,將因半導體元件所發生的熱傳達到電源模組用基板側,介著散熱片而往外部放散之構成。 For example, the power module shown in Patent Document 1 is provided with a circuit layer (aluminum member) made of aluminum (Al) on one surface of the ceramic substrate and aluminum formed on the other surface. The substrate for the power module of the metal layer and the structure of the semiconductor element to which the solder material is bonded to the circuit layer. Then, the heat sink is bonded to the lower side of the power module substrate, and the heat generated by the semiconductor element is transmitted to the power module substrate side, and is radiated to the outside via the heat sink.

不過,在以專利文獻1記載之電源模組之方式、用鋁構成電路層之場合下,由於在表面被形成鋁的氧化皮膜,而無法利用焊錫材來接合半導體元件。又,在由鋁構成金屬層之場合下,由於在表面被形成鋁的氧化皮膜,而無法利用焊錫材來接合散熱片。 However, when the circuit layer is made of aluminum as the power module described in Patent Document 1, since the oxide film of aluminum is formed on the surface, the semiconductor element cannot be bonded by the solder material. Further, when the metal layer is made of aluminum, the aluminum oxide film is formed on the surface, and the heat sink cannot be joined by the solder material.

於是,以往方面,以例如專利文獻2揭示之方式,在電路層或金屬層、散熱片的表面利用無電解電鍍等形成鍍鎳膜之後,再以焊錫材予以接合。 Then, in the related art, for example, in the form disclosed in Patent Document 2, a nickel plating film is formed on the surface of the circuit layer, the metal layer, or the heat sink by electroless plating, and then joined by a solder material.

此外,專利文獻3係提議作為焊錫材的代替採用包含氧化銀粒子與由有機物所構成的還原劑之氧化銀膏來接合半導體元件、金屬層及散熱片等之技術。 Further, Patent Document 3 proposes a technique of joining a semiconductor element, a metal layer, a heat sink, and the like by using a silver oxide paste containing silver oxide particles and a reducing agent made of an organic material instead of a solder material.

再者,專利文獻4係提議將電路層及金屬層由鋁層與銅(Cu)層構成之電源模組。此場合下,由於在電路層及金屬層的表面被配置銅層,所以能夠採用焊錫材良好地接合半導體元件。此外,因為銅之變形電阻比鋁大,而在讓此電源模組負荷熱循環(heat cycle)時,能 夠抑制電路層表面及金屬層表面的大變形,可以防止焊錫層龜裂的發生、使半導體元件與電路層之接合可信賴性及金屬層與散熱片之接合可信賴性提升。 Further, Patent Document 4 proposes a power supply module in which a circuit layer and a metal layer are composed of an aluminum layer and a copper (Cu) layer. In this case, since the copper layer is disposed on the surface of the circuit layer and the metal layer, the semiconductor element can be favorably bonded by the solder material. In addition, since the deformation resistance of copper is larger than that of aluminum, when the power module is subjected to a heat cycle, It is possible to suppress large deformation of the surface of the circuit layer and the surface of the metal layer, thereby preventing occurrence of cracking of the solder layer, reliability of bonding of the semiconductor element and the circuit layer, and reliability of bonding of the metal layer and the heat sink.

又,專利文獻4所記載之電源模組方面,作為電路層及金屬層是採用鋁層與銅層介著鈦層被接合之接合體。在此,在鋁層與鈦層之間被形成擴散層,此擴散層從鋁層側起依序具有:鋁-鈦層、鋁-鈦-矽層、與鋁-鈦-銅層。 Further, in the power module described in Patent Document 4, as the circuit layer and the metal layer, a bonded body in which an aluminum layer and a copper layer are bonded via a titanium layer is used. Here, a diffusion layer is formed between the aluminum layer and the titanium layer, and the diffusion layer sequentially has an aluminum-titanium layer, an aluminum-titanium-iridium layer, and an aluminum-titanium-copper layer from the aluminum layer side.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本特許第3171234號公報[Patent Document 1] Japanese Patent No. 3171234

[專利文獻2]日本特開2004-172378號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-172378

[專利文獻3]日本特開2008-208442號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2008-208442

[專利文獻4]日本特許第3012835號公報[Patent Document 4] Japanese Patent No. 3012835

不過,如專利文獻2記載,在電路層表面及金屬層表面形成鎳鍍膜之電源模組用基板方面,在到將半導體元件接合到電路層之過程以及到將散熱片接合到金屬層之過程,其問題在於鎳鍍膜的表面因氧化等導致劣化,介著焊錫材而接合之與半導體元件之接合可信賴性及介著焊錫材而接合之與散熱片之接合可信賴性降低之疑慮。此外,鍍鎳步驟上,係有以在不要的領域形成鍍鎳讓電解腐 蝕等麻煩不會發生之方式來進行遮罩處理。以此方式,在進行遮罩處理後再進行電鍍處理之場合下,問題在於有必要耗費大量的勞力於將鎳鍍膜形成在電路層部分及金屬層部分之步驟,使電源模組的製造成本大幅增加。 However, as described in Patent Document 2, in the process of forming a substrate for a power module of a nickel plating film on the surface of a circuit layer and a surface of a metal layer, a process of bonding a semiconductor element to a circuit layer and a process of bonding a heat sink to a metal layer are performed. The problem is that the surface of the nickel plating film is deteriorated by oxidation or the like, and the reliability of bonding to the semiconductor element via the solder material and the reliability of bonding to the heat sink with the solder material are lowered. In addition, in the nickel plating step, there is a nickel plating to make electrolytic rot in unnecessary fields. Masking is done in such a way that troubles such as eclipse do not occur. In this way, in the case where the plating treatment is performed after the masking treatment, the problem is that it is necessary to spend a lot of labor on the steps of forming the nickel plating film on the circuit layer portion and the metal layer portion, so that the manufacturing cost of the power module is large. increase.

再者,如專利文獻3記載,在採用氧化銀膏接合電路層與半導體元件之場合及採用氧化銀膏接合金屬層與散熱片之場合下,由於鋁與氧化銀膏的燒結體之接合性差,而有事先在電路層的表面及金屬層的表面形成銀基底層之必要。 Further, as described in Patent Document 3, when a circuit layer and a semiconductor element are bonded by a silver oxide paste, and a metal layer and a heat sink are bonded by using a silver oxide paste, the bonding property between the aluminum and the sintered body of the silver oxide paste is poor. There is a need to form a silver base layer on the surface of the circuit layer and the surface of the metal layer in advance.

此外,專利文獻4記載之電源模組之問題在於,因為在電路層之中的鋁層與鈦層的接合界面,形成硬的鋁-鈦層或鋁-鈦-銅層,還有,在金屬層之中的鋁層與鈦層的接合界面,形成硬的鋁-鈦層或鋁-鈦-銅層,所以在負荷熱循環時會形成龜裂的起點。 Further, the power module described in Patent Document 4 has a problem in that a hard aluminum-titanium layer or an aluminum-titanium-copper layer is formed because of a joint interface between the aluminum layer and the titanium layer in the circuit layer, and further, in the metal The joint interface between the aluminum layer and the titanium layer in the layer forms a hard aluminum-titanium layer or an aluminum-titanium-copper layer, so that the starting point of the crack is formed during the thermal cycle of the load.

再者,在鋁層上介著鈦箔層積銅板等,把鋁層與鈦箔之界面加熱到熔融的溫度之場合下,由於在接合界面會產生液相而產生瘤、使厚度改變,而發生接合可信賴性降低之問題。 Further, when a copper foil laminated copper plate or the like is interposed on the aluminum layer, and the interface between the aluminum layer and the titanium foil is heated to a melting temperature, a liquid phase is generated at the joint interface to cause a tumor, and the thickness is changed. A problem of reduced joint reliability occurs.

在此,作為代替專利文獻2之鍍鎳,也考慮如專利文獻4記載,在由鋁所構成的電路層及由鋁所構成的金屬層之上介著鈦箔接合鎳板形成鎳層。再者,也考慮在採用專利文獻3之氧化銀膏時,在由鋁所構成的電路層及由鋁所構成的金屬層之上介著鈦箔接合銀板形成銀基底層。 Here, as a nickel plating in the patent document 2, as described in Patent Document 4, a nickel layer is formed by bonding a nickel plate to a metal layer made of aluminum and a metal layer made of aluminum. Further, in the case of using the silver oxide paste of Patent Document 3, it is also considered that a silver base layer is formed by bonding a silver plate with a titanium foil on a circuit layer made of aluminum and a metal layer made of aluminum.

然而,在以專利文獻4所記載之方法,形成鎳層或銀層時,與形成銅層之場合同樣地,藉由在鋁層與鈦層之接合界面,形成鋁-鈦層、鋁-鈦-鎳層、鋁-鈦-銀層等之硬層、在接合界面產生瘤等,有導致接合可信賴性降低之疑慮。 However, when a nickel layer or a silver layer is formed by the method described in Patent Document 4, an aluminum-titanium layer or an aluminum-titanium layer is formed at the joint interface between the aluminum layer and the titanium layer as in the case of forming a copper layer. - A hard layer such as a nickel layer or an aluminum-titanium-silver layer, or a tumor at the joint interface, which may cause a decrease in the reliability of bonding.

如以上,以往並無法將鋁構件、與由銅、鎳、銀任一種所構成的金屬構件良好地接合,而無法得到接合可信賴性優良的接合體。此外,以往並無法將鋁層、與由銅、鎳、銀任一種所構成的金屬構件層良好地接合,而無法得到接合可信賴性優良之具有金屬層之電源模組用基板。 As described above, conventionally, the aluminum member and the metal member made of any one of copper, nickel, and silver cannot be joined well, and a joint having excellent joint reliability cannot be obtained. Further, conventionally, it has not been possible to bond the aluminum layer to the metal member layer made of any one of copper, nickel, and silver, and it is not possible to obtain a substrate for a power module having a metal layer having excellent joint reliability.

本發明有鑑於前述情事,其目的在於提供一種讓鋁構件、與由銅、鎳、銀任一種所構成的金屬構件可良好地被接合,在負荷熱循環時能夠抑制接合部龜裂的發生,接合可信賴性良好之接合體、電源模組用基板及附散熱片之電源模組用基板。 The present invention has been made in view of the above circumstances, and an object thereof is to provide an aluminum member which can be joined to a metal member made of any one of copper, nickel, and silver, and which can suppress the occurrence of cracks in the joint portion during load heat circulation. A bonded body having good reliability, a substrate for a power module, and a substrate for a power module with a heat sink are bonded.

此外,其目的在於提供一種在具有鋁層、與由銅、鎳、銀任一種所構成的金屬構件層之金屬層,鋁層與金屬構件層可良好地被接合,在負荷熱循環時能夠抑制接合部龜裂的發生,接合可信賴性良好之接合體、電源模組用基板及附散熱片之電源模組用基板。 Further, it is an object of the invention to provide a metal layer having an aluminum layer and a metal member layer composed of any one of copper, nickel, and silver, and the aluminum layer and the metal member layer can be joined well, and can be suppressed during load thermal cycling. In the joint portion, the bonding body, the power module substrate, and the power module substrate with the heat sink are bonded.

欲解決前述課題,(1)本發明其中一樣態之接合體,將由鋁(aluminium)所構成之鋁構件、與由 銅、鎳、或銀所構成之金屬構件接合起來之接合體,係在前述鋁構件與前述金屬構件之接合部形成:位於前述金屬構件側之鈦(Ti)層,與位於前述鈦層和前述鋁構件之間、在Al3Ti讓矽(Si)固溶之鋁-鈦-矽層;前述鋁-鈦-矽層係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁構件側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 In order to solve the above problems, (1) a bonded body in which the aluminum member composed of aluminum and a metal member made of copper, nickel, or silver are bonded to each other in the same manner as in the present invention. The joint portion of the aluminum member and the metal member is formed of a titanium (Ti) layer on the side of the metal member, and an aluminum-titanium between the titanium layer and the aluminum member and solid-dissolving in the Al 3 Ti 矽 (Si) a ruthenium layer; the aluminum-titanium-ruthenium layer comprising: a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer; and a side of the aluminum member formed on the side of the aluminum member, the yttrium concentration is higher than the first aluminum-titanium- The second layer of aluminum-titanium-bismuth is also low.

根據上述接合體,在由鋁所構成的鋁構件、與由銅、鎳、或銀所構成的金屬構件之接合部,形成鈦層、與鋁-鈦-矽層,由於並不形成硬的鋁-鈦-銅層或鋁-鈦層等,所以在負荷熱循環時,能夠抑制接合部龜裂的發生、能夠提升鋁構件與金屬構件之接合可信賴性。 According to the above-mentioned joined body, a titanium layer and an aluminum-titanium-tantalum layer are formed in a joint portion of an aluminum member made of aluminum and a metal member made of copper, nickel, or silver, since hard aluminum is not formed. Since the titanium-copper layer or the aluminum-titanium layer or the like can prevent the occurrence of cracks in the joint portion during the thermal cycle of the load, the reliability of joining of the aluminum member and the metal member can be improved.

再者,由於被形成在鈦層側的第一鋁-鈦-矽層之矽濃度是比被形成在鋁構件側的第二鋁-鈦-矽層還高,所以,能夠利用矽濃度較高的第一鋁-鈦-矽層來抑制鈦原子擴散到鋁構件側,薄化第一鋁-鈦-矽層及第二鋁-鈦-矽層之厚度,在負荷熱循環時,可以抑制接合部發生龜裂。 Further, since the lanthanum concentration of the first aluminum-titanium-ruthenium layer formed on the side of the titanium layer is higher than that of the second aluminum-titanium-ruthenium layer formed on the side of the aluminum member, the yttrium concentration can be utilized The first aluminum-titanium-ruthenium layer inhibits diffusion of titanium atoms to the side of the aluminum member, and thins the thickness of the first aluminum-titanium-tantalum layer and the second aluminum-titanium-ruthenium layer, and can inhibit bonding during load thermal cycling Cracks occurred in the department.

又,在本發明,鋁係由純鋁或鋁合金所構成者,金屬構件則是由銅或銅合金、鎳或鎳合金、或者銀或銀合金所構成者。 Further, in the present invention, the aluminum is made of pure aluminum or an aluminum alloy, and the metal member is made of copper or a copper alloy, nickel or a nickel alloy, or silver or a silver alloy.

(2)本發明另一樣態之接合體係(1)記載之接合體,在上述接合體,前述第二鋁-鈦-矽層所包含之矽濃度為1at%以上。 (2) The bonded body according to the joint system of the present invention, wherein the second aluminum-titanium-tantalum layer has a niobium concentration of 1 at% or more.

此場合下,由於被形成在鋁構件側之第二鋁-鈦-矽層 具有足夠的矽濃度,所以可抑制構成鋁構件之鋁原子過度地擴散到鈦層側,能夠薄化第一鋁-鈦-矽層、及第二鋁-鈦-矽層之厚度。 In this case, due to the second aluminum-titanium-bismuth layer formed on the side of the aluminum member Since the yttrium concentration is sufficient, the aluminum atoms constituting the aluminum member can be prevented from excessively diffusing to the side of the titanium layer, and the thickness of the first aluminum-titanium-tantalum layer and the second aluminum-titanium-ruthenium layer can be thinned.

(3)本發明另一樣態之電源模組用基板,係具備絕緣層、與被形成在前述絕緣層一方的面之電路層;前述電路層是由(1)或(2)記載之接合體所構成;前述電路層具有:被形成在前述絕緣層一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層一方的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 (3) A substrate for a power module according to another aspect of the present invention includes an insulating layer and a circuit layer formed on one surface of the insulating layer; and the circuit layer is a bonded body described in (1) or (2) The circuit layer includes: a surface formed on one surface of the insulating layer, an aluminum layer formed of the aluminum member, and a metal member layer formed of the metal member on a surface of the aluminum layer; Forming a joint portion between the aluminum layer and the metal member layer: a titanium layer on the side of the metal member layer, and an aluminum-titanium-ruthium between the titanium layer and the aluminum layer and solid-solving in Al 3 Ti The aluminum-titanium-tantalum layer includes: a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and a side of the aluminum layer formed on the side of the aluminum layer, and having a germanium concentration higher than that of the first aluminum-titanium-germanium layer Low second aluminum-titanium-tantalum layer.

根據上述電源模組用基板,在電路層,在鋁層與金屬構件層之接合部是形成鈦層、與鋁-鈦-矽層,並未形成硬的鋁-鈦-銅層或鋁-鈦層等,因而,在負荷熱循環時,能夠抑制使電路層發生龜裂之情事。因此,在電源模組,能夠提升半導體元件與電源模組用基板之接合可信賴性。 According to the above substrate for a power module, in the circuit layer, a titanium layer and an aluminum-titanium-germanium layer are formed at a joint portion between the aluminum layer and the metal member layer, and a hard aluminum-titanium-copper layer or aluminum-titanium is not formed. Since the layer or the like is used, it is possible to suppress cracking of the circuit layer during thermal cycling of the load. Therefore, in the power supply module, the reliability of bonding between the semiconductor element and the power supply module substrate can be improved.

再者,被形成在鈦層側之第一鋁-鈦-矽層之矽濃度,比被形成在鋁層側之第二鋁-鈦-矽層之矽濃度還高,因而,能夠抑制鈦原子擴散到鋁層側,將第一鋁-鈦-矽層、及第二鋁-鈦-矽層之厚度薄化。 Further, the ruthenium concentration of the first aluminum-titanium-ruthenium layer formed on the side of the titanium layer is higher than the ruthenium concentration of the second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer, thereby suppressing the titanium atom Diffusion to the side of the aluminum layer thins the thickness of the first aluminum-titanium-tantalum layer and the second aluminum-titanium-ruthenium layer.

此外,這場合下,在絕緣層一方的面形成變形電阻比較小的鋁層,因而,能夠抑制鋁層吸收負荷熱循環時所產生之熱應力、使陶瓷基板發生破裂之情事。 Further, in this case, an aluminum layer having a relatively small deformation resistance is formed on one surface of the insulating layer. Therefore, it is possible to prevent the aluminum layer from absorbing the thermal stress generated during the thermal cycle of the load and causing the ceramic substrate to be broken.

再者,在鋁層一方的面形成由銅或銅合金所構成的銅層之場合,因為變形電阻方面銅層比鋁層大,所以,可抑制負荷熱循環時電路層的變形、抑制接合半導體元件與電路層之焊錫層的變形,能夠提升接合可信賴性。此外,熱傳導率良好的銅層是被形成在電路層的一方側,因而,能夠散開來自半導體元件的熱、有效率地傳達到電源模組用基板側。 In the case where a copper layer made of copper or a copper alloy is formed on one surface of the aluminum layer, since the copper layer is larger than the aluminum layer in terms of deformation resistance, deformation of the circuit layer during load thermal cycling and suppression of bonding of the semiconductor can be suppressed. The deformation of the solder layer of the device and the circuit layer can improve the connection reliability. Further, since the copper layer having a good thermal conductivity is formed on one side of the circuit layer, heat from the semiconductor element can be dissipated and efficiently transmitted to the power supply module substrate side.

此外,在鋁層一方的面形成由鎳或鎳合金所構成的鎳層之場合下,可焊性變得良好、與半導體元件之接合可信賴性提升。 Further, when a nickel layer made of nickel or a nickel alloy is formed on one surface of the aluminum layer, the solderability is improved and the reliability of bonding to the semiconductor element is improved.

此外,在鋁層一方的面形成由銀或銀合金所構成的銀層之場合下,在採用包含例如氧化銀粒子與由有機物所構成的還原劑之氧化銀膏來接合半導體元件時,由於使氧化銀被還原之銀與銀層成為同種的金屬與金屬的接合,所以能夠使接合可信賴性提升。此外,熱傳導率良好的銀層是被形成在電路層的一方側,因而,能夠散開來自半導體元件的熱、有效率地傳達到電源模組用基板側。 Further, when a silver layer made of silver or a silver alloy is formed on one surface of the aluminum layer, when a semiconductor element is bonded by using a silver oxide paste containing, for example, silver oxide particles and a reducing agent composed of an organic substance, Since the silver and silver layers which are reduced by silver oxide are joined to the same kind of metal and metal, the reliability of bonding can be improved. Further, since the silver layer having a good thermal conductivity is formed on one side of the circuit layer, heat from the semiconductor element can be dissipated and efficiently transmitted to the power supply module substrate side.

(4)本發明另一樣態之電源模組用基板,係(3)所記載之電源模組用基板,具備在前述絕緣層另一方的面被形成之金屬層;前述金屬層是由(1)或(2)記載之接合體所構成;前述金屬層具有:被形成在前述絕緣 層另一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層之中、和前述絕緣層被形成的面相反側的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 (4) A substrate for a power module according to another aspect of the invention, wherein the substrate for a power module according to (3) includes a metal layer formed on the other surface of the insulating layer; and the metal layer is (1) Or the bonded body described in (2), wherein the metal layer has an aluminum layer formed of the aluminum member formed on the other surface of the insulating layer, and is formed in the aluminum layer and a surface on the opposite side of the surface on which the insulating layer is formed, a metal member layer composed of the metal member; a joint portion between the aluminum layer and the metal member layer: a titanium layer on the side of the metal member layer, and the titanium layer between the layer and the aluminum layer, so the Al 3 Ti solid solution of silicon aluminum - titanium - silicon layer; the Al - Ti - Si layer includes: an aluminum is formed on a first side of the layer of titanium - titanium - silicon layer, And a second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer and having a lower germanium concentration than the first aluminum-titanium-tantalum layer.

此場合下,在金屬層,在鋁層與金屬構件層之接合部是形成鈦層、與第一鋁-鈦-矽層,並未形成硬的鋁-鈦-銅層或鋁-鈦層等,因而,在負荷熱循環時,能夠抑制使金屬層發生龜裂之情事。從而,在接合金屬層與散熱片之場合下,能夠使金屬層與散熱片之接合可信賴性提升。 In this case, in the metal layer, a titanium layer is formed at the joint portion between the aluminum layer and the metal member layer, and the first aluminum-titanium-tantalum layer is not formed, and a hard aluminum-titanium-copper layer or an aluminum-titanium layer is not formed. Therefore, it is possible to suppress the occurrence of cracking of the metal layer during the thermal cycle of the load. Therefore, in the case where the metal layer and the heat sink are joined, the reliability of bonding of the metal layer and the heat sink can be improved.

(5)本發明另一樣態之電源模組用基板,具備絕緣層,被形成在該絕緣層一方的面之電路層,與被形成在前述絕緣層另一方的面之金屬層之電源模組用基板,前述金屬層是由(1)或(2)記載之接合體所構成;在由前述鋁構件所構成之鋁層與由前述金屬構件所構成金屬構件層之接合部形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 (5) A substrate for a power module according to another aspect of the present invention includes an insulating layer, a circuit layer formed on one surface of the insulating layer, and a power module formed on a metal layer on the other surface of the insulating layer In the substrate, the metal layer is composed of the bonded body described in (1) or (2), and is formed by a joint portion of an aluminum layer composed of the aluminum member and a metal member layer composed of the metal member: a titanium layer on the component layer side, and an aluminum-titanium-ruthenium layer which is solid-dissolved in the Al 3 Ti between the titanium layer and the aluminum layer; the aluminum-titanium-germanium layer is provided on the titanium layer a first aluminum-titanium-ruthenium layer on the side and a second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer and having a lower germanium concentration than the first aluminum-titanium-ruthenium layer.

又,在本發明,鋁係由純鋁或鋁合金所構成,銅是由純銅或銅合金、鎳是由純鎳或鎳合金、銀是由純銀或銀合金所構成的。 Further, in the present invention, the aluminum is made of pure aluminum or an aluminum alloy, the copper is made of pure copper or a copper alloy, the nickel is made of pure nickel or a nickel alloy, and the silver is made of pure silver or a silver alloy.

根據上述電源模組用基板,在金屬層,在鋁層與金屬構件層之接合部是形成鈦層、與鋁-鈦-矽層,並未形成硬的鋁-鈦-銅層或鋁-鈦層等,因而,在負荷熱循環時,能夠抑制使金屬層發生龜裂之情事。因此,在電源模組用基板之金屬層被接合在散熱片之場合下,能夠提升電源模組用基板與散熱片之接合可信賴性。 According to the above substrate for a power module, in the metal layer, a titanium layer and an aluminum-titanium-germanium layer are formed at a joint portion between the aluminum layer and the metal member layer, and a hard aluminum-titanium-copper layer or aluminum-titanium is not formed. Since the layer or the like is used, it is possible to suppress cracking of the metal layer during thermal cycling of the load. Therefore, when the metal layer of the power module substrate is bonded to the heat sink, the reliability of the bonding between the power module substrate and the heat sink can be improved.

再者,被形成在鈦層側之第一鋁-鈦-矽層之矽濃度,比被形成在鋁層側之第二鋁-鈦-矽層之矽濃度還高,因而,能夠抑制鈦原子擴散到鋁層側,將第一鋁-鈦-矽層、及第二鋁-鈦-矽層之厚度薄化。 Further, the ruthenium concentration of the first aluminum-titanium-ruthenium layer formed on the side of the titanium layer is higher than the ruthenium concentration of the second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer, thereby suppressing the titanium atom Diffusion to the side of the aluminum layer thins the thickness of the first aluminum-titanium-tantalum layer and the second aluminum-titanium-ruthenium layer.

此外,這場合下,在絕緣層另一方的面形成變形電阻比較小的鋁層,因而,能夠抑制鋁層吸收負荷熱循環時所產生之熱應力,使陶瓷基板發生破裂之情事。 Further, in this case, an aluminum layer having a relatively small deformation resistance is formed on the other surface of the insulating layer. Therefore, it is possible to prevent the aluminum layer from absorbing the thermal stress generated during the thermal cycle of the load and causing the ceramic substrate to be broken.

再者,在鋁層之中與被形成絕緣層的面相反側的面、形成由銅或銅合金所構成的銅層之場合下,因為變形電阻方面銅層比鋁層大,所以,可抑制負荷熱循環時金屬層的變形、抑制接合散熱片與金屬層之接合層的變形,能夠提升接合可信賴性。 Further, in the case where a copper layer made of copper or a copper alloy is formed on the surface of the aluminum layer opposite to the surface on which the insulating layer is formed, since the copper layer is larger than the aluminum layer in terms of deformation resistance, it can be suppressed. The deformation of the metal layer during the thermal cycle of the load suppresses the deformation of the bonding layer between the bonding fin and the metal layer, and the bonding reliability can be improved.

此外,在鋁層之中與被形成絕緣層的面相反側的面、形成由鎳或鎳合金所構成的鎳層之場合下,可焊性變得良好、與散熱片之接合可信賴性提升。 Further, in the case where a surface of the aluminum layer opposite to the surface on which the insulating layer is formed is formed and a nickel layer made of nickel or a nickel alloy is formed, the solderability is improved, and the bonding reliability with the heat sink is improved. .

此外,在鋁層之中與被形成絕緣層的面相反側的面、形成由銀或銀合金所構成的銀層之場合下,在採用包含例如氧化銀粒子與由有機物所構成的還原劑之氧化銀膏來接合散熱片時,由於使氧化銀被還原之銀與銀層成為同種的金屬與金屬的接合,所以能夠使接合可信賴性提升。 Further, in the case where a surface of the aluminum layer opposite to the surface on which the insulating layer is formed is formed with a silver layer composed of silver or a silver alloy, a reducing agent containing, for example, silver oxide particles and an organic substance is used. When the silver oxide paste is bonded to the heat sink, the silver and the silver layer which are reduced by the silver oxide are joined to the same metal and metal, so that the joint reliability can be improved.

(6)本發明另一樣態之附散熱片之電源模組用基板,係具備(3)至(5)任一項記載之電源模組用基板、與被接合在前述金屬層之散熱片。 (6) A substrate for a power module with a heat sink according to another aspect of the invention, comprising the substrate for a power module according to any one of (3) to (5), and a heat sink bonded to the metal layer.

根據上述附散熱片之電源模組用基板,由於電源模組用基板與散熱片被接合著,所以能夠介著散熱片有效率地將來自電源模組用基板側之熱予以放散。 According to the substrate for the power module with the heat sink described above, since the power module substrate and the heat sink are bonded to each other, the heat from the power module substrate side can be efficiently dissipated via the heat sink.

(7)本發明另一樣態之附散熱片之電源模組用基板,係(6)記載之附散熱片之電源模組用基板,前述金屬層與前述散熱片是介著焊錫層而被接合著。 (7) A substrate for a power module with a heat sink according to another aspect of the invention is the substrate for a power module with a heat sink according to (6), wherein the metal layer and the heat sink are bonded via a solder layer. With.

此場合下,金屬層之中被形成在散熱片側之由銅、鎳、或銀所構成之金屬構件層、與散熱片是介著焊錫層被接合著,因而,能夠良好地接合金屬構件層與焊錫層,能夠使金屬層與散熱片之接合可信賴性提升。 In this case, the metal member layer made of copper, nickel, or silver formed on the heat sink side of the metal layer is bonded to the heat sink via the solder layer, so that the metal member layer can be favorably bonded. The solder layer can improve the reliability of the bonding between the metal layer and the heat sink.

(8)本發明另一樣態之附散熱片之電源模組用基板,係具備:絕緣層,被形成在該絕緣層一方的面之電路層,被形成在前述絕緣層另一方的面之金屬層,與被接合在該金屬層之散熱片;前述金屬層與前述散熱片是由(1)或(2)記載之接合體所構成;前述金屬層及前述散熱片的接合面的一方是由鋁所構成;前述金屬層及前述散 熱片的接合面的另一方是由銅、鎳、或銀所構成;在前述金屬層與前述散熱片之接合部形成:位於前述接合面由銅、鎳、或銀所構成的前述金屬層或前述散熱片側之鈦層,前述接合面由鋁所構成的前述金屬層或前述散熱片,與位於和前述鈦層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述接合面由鋁所構成的前述金屬層或前述散熱片側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 (8) A substrate for a power module with a heat sink according to another aspect of the present invention includes: an insulating layer; a circuit layer formed on one surface of the insulating layer; and a metal formed on the other surface of the insulating layer a layer and a heat sink bonded to the metal layer; wherein the metal layer and the heat sink are formed by the bonded body described in (1) or (2); and one of a joint surface of the metal layer and the heat sink is The aluminum layer is composed of copper, nickel or silver, and the joint between the metal layer and the heat sink is formed by copper, nickel, and Or the metal layer formed of silver or the titanium layer on the fin side, the metal layer or the heat sink formed of aluminum, and the titanium layer and the titanium layer are allowed to dissolve in Al 3 Ti An aluminum-titanium-tantalum layer; the aluminum-titanium-ruthenium layer comprising: a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer; and the metal layer formed of aluminum on the joint surface or the aforementioned The fin side and the crucible concentration are more than the first aluminum-titanium-bismuth layer The second aluminum - titanium - silicon layer.

根據上述附散熱片之電源模組用基板,在金屬層與散熱片之接合部是形成鈦層、與鋁-鈦-矽層,並未形成硬的鋁-鈦-銅層或鋁-鈦層等,因而,在負荷熱循環時,能夠抑制金屬層與散熱片之接合部發生龜裂之情事,能夠謀求接合可信賴性的提升。 According to the above substrate for a power module with a heat sink, a titanium layer and an aluminum-titanium-tantal layer are formed at a joint portion between the metal layer and the heat sink, and a hard aluminum-titanium-copper layer or an aluminum-titanium layer is not formed. For this reason, it is possible to suppress the occurrence of cracks in the joint portion between the metal layer and the heat sink during the thermal cycle of the load, and it is possible to improve the reliability of the joint.

根據本發明,讓鋁構件(鋁層)、與由銅、鎳、銀任一種所構成的金屬構件(金屬構件層)可良好地被接合,在負荷熱循環時能夠抑制接合部龜裂的發生,能夠提供接合可信賴性良好之接合體、電源模組用基板及附散熱片之電源模組用基板。 According to the present invention, the aluminum member (aluminum layer) and the metal member (metal member layer) composed of any one of copper, nickel, and silver can be favorably joined, and the occurrence of joint cracking can be suppressed during load heat circulation. It is possible to provide a bonded body having a good reliability, a substrate for a power module, and a substrate for a power module with a heat sink.

10、210、510、610‧‧‧電源模組用基板10, 210, 510, 610‧‧‧Power Module Substrate

11、511‧‧‧陶瓷基板(絕緣層) 11, 511‧‧‧ceramic substrate (insulation layer)

12、612‧‧‧電路層(接合體) 12, 612‧‧‧ circuit layer (joined body)

12A、313A、513A、612A‧‧‧鋁(Al)層12A, 313A, 513A, 612A‧‧‧Aluminum (Al) layer

12B、313B、513B、612B‧‧‧銅(Cu)層(金屬構件層) 12B, 313B, 513B, 612B‧‧‧ copper (Cu) layer (metal component layer)

13‧‧‧金屬層13‧‧‧metal layer

15、215、315、515、615、715‧‧‧鈦(Ti)層15, 215, 315, 515, 615, 715‧‧‧ Titanium (Ti) layer

16、216、516‧‧‧鋁-鈦-矽層16,216,516‧‧‧Aluminum-Titanium-矽layer

16A、216A、516A‧‧‧第一鋁-鈦-矽層16A, 216A, 516A‧‧‧ first aluminum-titanium-tantalum layer

16B、216B、516B‧‧‧第二鋁-鈦-矽層16B, 216B, 516B‧‧‧Second aluminum-titanium-bismuth layer

212、512‧‧‧電路層212, 512‧‧‧ circuit layer

213‧‧‧金屬層(鋁層) 213‧‧‧metal layer (aluminum layer)

230、530、630‧‧‧附散熱片之電源模組用基板230, 530, 630‧‧‧ Substrate for power module with heat sink

231、531‧‧‧散熱片(金屬構件) 231, 531‧‧ ‧ heat sink (metal components)

313、513‧‧‧金屬層(接合體) 313, 513‧‧‧ metal layer (joined body)

圖1係關於本發明第一實施型態之電源模組之概略說明圖。 Fig. 1 is a schematic explanatory view showing a power module according to a first embodiment of the present invention.

圖2係圖1之鋁層與鈦層的接合界面之放大說明圖。 Fig. 2 is an enlarged explanatory view showing a joint interface between an aluminum layer and a titanium layer of Fig. 1.

圖3係說明關於第一實施型態之電源模組的製造方法之流程圖。 Fig. 3 is a flow chart showing a method of manufacturing the power module of the first embodiment.

圖4係關於第一實施型態之電源模組之製造方法概略說明圖。 Fig. 4 is a schematic explanatory view showing a manufacturing method of the power module of the first embodiment.

圖5係關於本發明第二實施型態之附散熱片之電源模組之概略說明圖。 Fig. 5 is a schematic explanatory view showing a power supply module with a heat sink according to a second embodiment of the present invention.

圖6係圖5之金屬層與鈦層的接合界面之放大說明圖。 Fig. 6 is an enlarged explanatory view showing a joint interface between a metal layer and a titanium layer of Fig. 5.

圖7係說明關於第二實施型態之附散熱片之電源模組的製造方法之流程圖。 Fig. 7 is a flow chart showing a method of manufacturing the power module with the heat sink attached to the second embodiment.

圖8係關於第二實施型態之附散熱片之電源模組之製造方法概略說明圖。 Fig. 8 is a schematic explanatory view showing a manufacturing method of a power module with a heat sink attached to the second embodiment.

圖9係關於本發明第三實施型態之電源模組之概略說明圖。 Fig. 9 is a schematic explanatory view showing a power supply module according to a third embodiment of the present invention.

圖10係關於本發明第四實施型態之電源模組之製造方法概略說明圖。 Fig. 10 is a schematic explanatory view showing a method of manufacturing a power module according to a fourth embodiment of the present invention.

圖11係本發明例1-1接合體之鋁構件與金屬構件的接合部之SEM像。 Fig. 11 is an SEM image of a joint portion between an aluminum member and a metal member of the joined body of Example 1-1 of the present invention.

圖12係比較例1-1接合體之鋁構件與金屬構件的接合部之SEM像。 Fig. 12 is an SEM image of a joint portion between an aluminum member and a metal member of the joined body of Comparative Example 1-1.

圖13係關於本發明第5實施型態之附散熱片之電源模組之概略說明圖。 Figure 13 is a diagram showing a power supply for a heat sink according to a fifth embodiment of the present invention. A schematic illustration of the module.

圖14係關於第五實施型態之電源模組用基板之概略說明圖。 Fig. 14 is a schematic explanatory view showing a substrate for a power module according to a fifth embodiment.

圖15係圖14金屬層之鈦層與鋁層的接合部之放大說明圖。 Fig. 15 is an enlarged explanatory view showing a joint portion between a titanium layer and an aluminum layer of the metal layer of Fig. 14.

圖16係說明關於第五實施型態之附散熱片之電源模組的製造方法之流程圖。 Fig. 16 is a flow chart for explaining a method of manufacturing a power supply module with a heat sink according to a fifth embodiment.

圖17係關於第五實施型態之附散熱片之電源模組之製造方法概略說明圖。 Fig. 17 is a schematic explanatory view showing a manufacturing method of a power module with a heat sink according to a fifth embodiment.

圖18係關於本發明第六實施型態之附散熱片之電源模組之概略說明圖。 Fig. 18 is a schematic explanatory view showing a power supply module with a heat sink according to a sixth embodiment of the present invention.

圖19係關於本發明第七實施型態之電源模組用基板之製造方法概略說明圖。 Fig. 19 is a schematic explanatory view showing a method of manufacturing a substrate for a power module according to a seventh embodiment of the present invention.

(第一實施型態) (first embodiment)

以下,參照附圖說明本發明之實施型態。首先,針對本發明之第一實施型態加以說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a first embodiment of the present invention will be described.

圖1係顯示關於本發明第一實施型態之電源模組1。 Fig. 1 shows a power module 1 according to a first embodiment of the present invention.

該電源模組1,係具備電源模組用基板10,與在此電源模組用基板10一方的面(圖1之上面)介著焊錫層2被接合之半導體元件3。 The power module 1 includes a power module substrate 10 and a semiconductor element 3 bonded to the solder layer 2 via a surface (upper surface of FIG. 1) of the power module substrate 10.

電源模組用基板10,係具備:構成絕緣層之 陶瓷基板11,被配設在此陶瓷基板11一方的面(在圖1為上面、第一面)之電路層12(接合體),與被配設在陶瓷基板11另一方的面(第二面)之金屬層13。 The power module substrate 10 includes: an insulating layer The ceramic substrate 11 is disposed on the surface of one surface (the upper surface and the first surface of FIG. 1) of the ceramic substrate 11, and is disposed on the other surface of the ceramic substrate 11 (second Metal layer 13 of the surface).

陶瓷基板11係由絕緣性高的AlN(氮化鋁)、Si3N4(氮化矽)、Al2O3(氧化鋁)等所構成。本實施型態中,係由放熱性佳之AlN(氮化鋁)所構成。此外,陶瓷基板11的厚度被設定為0.2~1.5mm之範圍內,在本實施型態被設定為0.635mm。 The ceramic substrate 11 is made of AlN (aluminum nitride), Si 3 N 4 (tantalum nitride), Al 2 O 3 (alumina) or the like having high insulating properties. In this embodiment, it is composed of AlN (aluminum nitride) which is excellent in heat dissipation. Further, the thickness of the ceramic substrate 11 is set to be in the range of 0.2 to 1.5 mm, and is set to 0.635 mm in the present embodiment.

電路層12,如圖1所示,係具有被配設在陶瓷基板11的第一面之鋁層12A、與在此鋁層12A一方的面介著鈦層15被層積之銅層12B(金屬構件層)。 As shown in FIG. 1, the circuit layer 12 has an aluminum layer 12A disposed on the first surface of the ceramic substrate 11, and a copper layer 12B laminated on the surface of the aluminum layer 12A via the titanium layer 15 ( Metal component layer).

鋁層12A,係在陶瓷基板11的第一面、藉由把由鋁或鋁合金所構成的鋁板(鋁構件)接合而被形成。在本實施型態,鋁層12A係藉由接合純度99質量%以上的鋁(所謂的2N鋁)的壓延板而被形成。前述純度99質量%以上的鋁的壓延板,可以含有0.08質量%以上0.95質量%以下的矽。又,被接合的鋁板的厚度被設定在0.1mm以上1.0mm以下的範圍內,本實施型態是被設定在0.4mm。 The aluminum layer 12A is formed by bonding an aluminum plate (aluminum member) made of aluminum or an aluminum alloy to the first surface of the ceramic substrate 11. In the present embodiment, the aluminum layer 12A is formed by joining a rolled sheet of aluminum (so-called 2N aluminum) having a purity of 99% by mass or more. The rolled sheet of aluminum having a purity of 99% by mass or more may contain 0.08 mass% or more and 0.95 mass% or less of rhodium. Further, the thickness of the joined aluminum plate is set to be in the range of 0.1 mm or more and 1.0 mm or less, and the present embodiment is set to 0.4 mm.

銅層12B,係在鋁層12A一方的面(圖1之上面)、藉由介著鈦層15把由銅或銅合金所構成的銅板(金屬構件)接合而被形成。在本實施型態,銅層12B係藉由讓無氧銅的壓延板在鋁層12A、介著鈦箔加以固相擴散接合而被形成。又,被接合的銅板的厚度被設定在 0.1mm以上6.0mm以下的範圍內,本實施型態是被設定在1.0mm。 The copper layer 12B is formed by bonding a copper plate (metal member) made of copper or a copper alloy to the surface of the aluminum layer 12A (upper surface of FIG. 1) via the titanium layer 15. In the present embodiment, the copper layer 12B is formed by solid-phase diffusion bonding of the rolled sheet of oxygen-free copper in the aluminum layer 12A and the titanium foil. Also, the thickness of the joined copper plate is set at In the range of 0.1 mm or more and 6.0 mm or less, the present embodiment is set to 1.0 mm.

鈦層15,係藉由讓鋁層12與銅板介著鈦箔被層積、被固相擴散接合而被形成的。在此,鈦箔的純度被設在99%以上。此外,鈦箔的厚度被設定在3μm以上40μm以下,本實施型態中,設定在10μm。 The titanium layer 15 is formed by laminating the aluminum layer 12 and the copper plate via the titanium foil and by solid phase diffusion bonding. Here, the purity of the titanium foil is set to 99% or more. Further, the thickness of the titanium foil is set to be 3 μm or more and 40 μm or less, and in the present embodiment, it is set to 10 μm.

接著,在鋁層12A與鈦層15之接合界面,如圖2所示,形成在Al3Ti讓矽固溶之鋁-鈦-矽層16。 Next, at the joint interface between the aluminum layer 12A and the titanium layer 15, as shown in FIG. 2, an aluminum-titanium-ruthenium layer 16 in which Al 3 Ti is solid-solved is formed.

鋁-鈦-矽層16,係藉由鋁層12A的鋁原子、與鈦層15的鈦原子相互擴散而被形成的。鋁-鈦-矽層16的厚度被設定在0.5μm以上10μm以下,本實施型態係設為3μm。 The aluminum-titanium-tantalum layer 16 is formed by interdiffusion of aluminum atoms of the aluminum layer 12A and titanium atoms of the titanium layer 15. The thickness of the aluminum-titanium-tantalum layer 16 is set to 0.5 μm or more and 10 μm or less, and the present embodiment is set to 3 μm.

該鋁-鈦-矽層16,係如圖2所示,具備被形成在鈦層15側之第一鋁-鈦-矽層16A、與被形成在鋁層12A側之第二鋁-鈦-矽層16B。亦即,在鋁層12A與銅層12B之接合部,被形成鈦層15、第一鋁-鈦-矽層16A、與第二鋁-鈦-矽層16B。 The aluminum-titanium-tantalum layer 16, as shown in FIG. 2, has a first aluminum-titanium-tantalum layer 16A formed on the side of the titanium layer 15 and a second aluminum-titanium layer formed on the side of the aluminum layer 12A. Layer 16B. That is, the titanium layer 15, the first aluminum-titanium-tantalum layer 16A, and the second aluminum-titanium-tantalum layer 16B are formed at the joint portion between the aluminum layer 12A and the copper layer 12B.

這些、第一鋁-鈦-矽層16A與第二鋁-鈦-矽層16B,係由在Al3Ti讓矽固溶之鋁-鈦-矽相所構成;第二鋁-鈦-矽層16B之矽濃度是比第一鋁-鈦-矽層16A之矽濃度還低。又,在本實施型態,第一鋁-鈦-矽層16A及第二鋁-鈦-矽層16B所包含之矽,係指在2N鋁的壓延板中讓作為不純物所包含之矽在鋁-鈦-矽層16中擴散、濃化者。 The first aluminum-titanium-tantalum layer 16A and the second aluminum-titanium-tantalum layer 16B are composed of an aluminum-titanium-niobium phase in which Al 3 Ti is dissolved in a solid solution; the second aluminum-titanium-niobium layer The concentration at 16B is lower than the concentration of the first aluminum-titanium-tantalum layer 16A. Further, in the present embodiment, the first aluminum-titanium-tantalum layer 16A and the second aluminum-titanium-tantalum layer 16B are contained in the rolled sheet of 2N aluminum, and the tantalum contained in the 2N aluminum rolled sheet is contained in the aluminum. - Diffusion and concentration in the titanium-germanium layer 16.

第一鋁-鈦-矽層16A之矽濃度係被設定在10at%以上 30at%以下,本實施型態係設在20at%。第二鋁-鈦-矽層16B之矽濃度係被設定在1at%以上10at%以下,本實施型態係設在3at%。 The concentration of the first aluminum-titanium-tantalum layer 16A is set at 10 at% or more. Below 30 at%, this embodiment is set at 20 at%. The ruthenium concentration of the second aluminum-titanium-tantalum layer 16B is set to be 1 at% or more and 10 at% or less, and the present embodiment is set at 3 at%.

金屬層13,係在陶瓷基板11的第二面(圖1之下面),藉由接合由鋁或鋁合金所構成的鋁板而被形成。在本實施型態,金屬層13,係由純度為99質量%以上的鋁(2N鋁)之壓延板被接合於陶瓷基板11而形成的。又,成為金屬層13的鋁板的厚度被設定在0.1mm以上3.0mm以下的範圍內,本實施型態是被設定在1.6mm。 The metal layer 13 is formed on the second surface (below the FIG. 1) of the ceramic substrate 11, and is joined by joining an aluminum plate made of aluminum or aluminum alloy. In the present embodiment, the metal layer 13 is formed by bonding a rolled plate of aluminum (2N aluminum) having a purity of 99% by mass or more to the ceramic substrate 11. Moreover, the thickness of the aluminum plate to be the metal layer 13 is set to be in the range of 0.1 mm or more and 3.0 mm or less, and the present embodiment is set to 1.6 mm.

半導體元件3係由矽等半導體材料所構成。該半導體元件3與電路層12是介著焊錫層2被接合起來。 The semiconductor element 3 is made of a semiconductor material such as germanium. The semiconductor element 3 and the circuit layer 12 are bonded to each other via the solder layer 2.

焊錫層2係設定為例如錫-銀系、錫-銅系、錫-銦系、或者錫-銀-銅系的焊錫材(所謂無鉛焊錫材),將電源模組用基板10與半導體元件3接合者。 The solder layer 2 is set to, for example, a tin-silver type, a tin-copper type, a tin-indium type, or a tin-silver-copper type solder material (so-called lead-free solder material), and the power module substrate 10 and the semiconductor element 3 are used. Joiner.

其次,參照圖3及圖4說明本實施型態之電源模組1之製造方法。 Next, a method of manufacturing the power module 1 of the present embodiment will be described with reference to Figs. 3 and 4 .

首先,如圖4所示,在陶瓷基板11的第一面層積成為鋁層12A之鋁板22A,再者在其上介著鈦箔25層積成為銅層12B之銅板22B。另一方面,在陶瓷基板11的第二面,層積成為金屬層13之鋁板23(鋁板及銅板層積步驟S01)。在此,本實施型態,係在鋁板22A、23與陶瓷基板11之間介著鋁-矽系的焊材箔26而層積。 First, as shown in FIG. 4, an aluminum plate 22A of the aluminum layer 12A is laminated on the first surface of the ceramic substrate 11, and a copper plate 22B in which the copper layer 12B is laminated on the titanium foil 25 is placed thereon. On the other hand, on the second surface of the ceramic substrate 11, an aluminum plate 23 (the aluminum plate and the copper plate lamination step S01) of the metal layer 13 is laminated. Here, in the present embodiment, an aluminum-lanthanum-based solder material foil 26 is laminated between the aluminum plates 22A and 23 and the ceramic substrate 11.

其次,於朝層積方向加壓(壓力1~35kgf/cm2)之狀態下配置在真空加熱爐內予以加熱、形成鋁層12A及金屬層13,而且,將鋁層12A與鈦箔25、及銅板22B與鈦箔25固相擴散接合,形成電路層12及金屬層13(電路層及金屬層形成步驟S02)。 Then, it is placed in a vacuum heating furnace in a state of being pressurized (pressure: 1 to 35 kgf/cm 2 ), and is heated to form an aluminum layer 12A and a metal layer 13, and the aluminum layer 12A and the titanium foil 25 are The copper plate 22B is solid-phase diffusion bonded to the titanium foil 25 to form the circuit layer 12 and the metal layer 13 (circuit layer and metal layer forming step S02).

此處,最好是將真空加熱爐內的壓力設定於10-6Pa以上10-3Pa以下之範圍內,加熱溫度設定為600℃以上643℃以下,保持時間則設定在30分鐘以上180分鐘以下之範圍內。此外,更好的加熱溫度被設在630℃以上643℃以下之範圍內。本實施型態,係朝層積方向負荷12kgf/cm2的壓力,於加熱溫度640℃、保持時間60分鐘之條件下實施。 Here, it is preferable to set the pressure in the vacuum heating furnace to a range of 10 -6 Pa or more and 10 -3 Pa or less, a heating temperature of 600 ° C or more and 643 ° C or less, and a holding time of 30 minutes or more and 180 minutes. Within the scope below. Further, a better heating temperature is set in the range of 630 ° C or more and 643 ° C or less. In the present embodiment, the pressure was 12 kgf/cm 2 in the laminating direction, and the temperature was 640 ° C and the holding time was 60 minutes.

又,鋁板22A、鈦箔25、及銅板22B被接合的各個面,係在事先把該面的傷除去、平滑化之後,被固相擴散接合。 Further, each of the surfaces on which the aluminum plate 22A, the titanium foil 25, and the copper plate 22B are joined is subjected to solid phase diffusion bonding after the damage of the surface is removed and smoothed.

如上述作法,製造本實施型態之電源模組用基板10。 As described above, the substrate 10 for a power module of the present embodiment is manufactured.

其次,在電路層12一方的面(表面),介著焊錫材層積半導體元件3,在還原爐內進行焊錫接合(半導體元件接合步驟S03)。 Next, on the surface (surface) of one of the circuit layers 12, the semiconductor element 3 is laminated via a solder material, and solder bonding is performed in the reduction furnace (semiconductor element bonding step S03).

如上述作法,製造本實施型態之電源模組1。 As described above, the power module 1 of the present embodiment is manufactured.

根據關於做成以上之類的構成之本實施型態之電源模組1及電源模組用基板10,在電路層12在鋁層12A與銅層12B之接合部,係做成鈦層15、與鋁-鈦-矽層 16被形成之構成,並未形成硬的鋁-鈦-銅層或鋁-鈦層,因而,能夠在負荷熱循環時,抑制使電路層12發生龜裂之情事。因此,在電源模組1,可以提升半導體元件3與電源模組用基板10之接合可信賴性。 According to the power module 1 and the power module substrate 10 of the present embodiment having the above configuration, the titanium layer 15 is formed on the circuit layer 12 at the joint portion between the aluminum layer 12A and the copper layer 12B. With aluminum-titanium-bismuth layer Since 16 is formed, a hard aluminum-titanium-copper layer or an aluminum-titanium layer is not formed, so that cracking of the circuit layer 12 can be suppressed during thermal cycling of the load. Therefore, in the power supply module 1, the reliability of bonding between the semiconductor element 3 and the power module substrate 10 can be improved.

再者,由於被形成在鈦層15側之第一鋁-鈦-矽層16A之矽濃度、比被形成在鋁層12A側之第二鋁-鈦-矽層16B之矽濃度還高,所以,能夠抑制利用矽濃度較高的第一鋁-鈦-矽層16A讓鈦原子擴散至鋁層12A側,可薄化鋁-鈦-矽層16之厚度。接著,藉由以此方式薄化鋁-鈦-矽層16之厚度,可以抑制在負荷熱循環時在鋁層12A與銅層12B之接合部發生破裂之情事。 Further, since the concentration of the first aluminum-titanium-tantalum layer 16A formed on the side of the titanium layer 15 is higher than the concentration of the second aluminum-titanium-tantalum layer 16B formed on the side of the aluminum layer 12A, It is possible to suppress the diffusion of titanium atoms to the side of the aluminum layer 12A by using the first aluminum-titanium-tantalum layer 16A having a high niobium concentration, and to thin the thickness of the aluminum-titanium-tantalum layer 16. Then, by thinning the thickness of the aluminum-titanium-tantalum layer 16 in this manner, it is possible to suppress the occurrence of cracking at the joint portion between the aluminum layer 12A and the copper layer 12B during thermal cycling of the load.

此外,被形成在鋁層12A側的第二鋁-鈦-矽層16B所含的矽濃度被設為1at%以上10at%以下,因而,能夠抑制鋁原子過度地擴散至鈦層15側,可薄化第二鋁-鈦-矽層16B之厚度。 In addition, the concentration of ruthenium contained in the second aluminum-titanium-tantalum layer 16B formed on the side of the aluminum layer 12A is set to be 1 at% or more and 10 at% or less. Therefore, it is possible to suppress excessive diffusion of aluminum atoms to the side of the titanium layer 15 . The thickness of the second aluminum-titanium-tantalum layer 16B is thinned.

再者,被形成在鈦層15側的第一鋁-鈦-矽層16A所含的矽濃度被設為10at%以上30at%以下,因而,能夠抑制鈦原子過度地擴散至鋁層12A側,可薄化第一鋁-鈦-矽層16A之厚度。 In addition, the concentration of germanium contained in the first aluminum-titanium-tantalum layer 16A formed on the side of the titanium layer 15 is set to 10 at% or more and 30 at% or less. Therefore, it is possible to suppress excessive diffusion of titanium atoms to the side of the aluminum layer 12A. The thickness of the first aluminum-titanium-tantalum layer 16A can be thinned.

此外,本實施型態,係做成在陶瓷基板11的第一面及第二面,將鋁板22A、鈦箔25、銅板22B、及鋁板23同時接合之構成,因而,能夠簡略化製造步驟,可減低製造成本。 Further, in the present embodiment, the aluminum plate 22A, the titanium foil 25, the copper plate 22B, and the aluminum plate 23 are simultaneously joined to each other on the first surface and the second surface of the ceramic substrate 11, so that the manufacturing steps can be simplified. Can reduce manufacturing costs.

此外,在陶瓷基板11的第一面形成變形電阻 比較小的鋁層12A,因而,能夠抑制鋁層12A吸收負荷熱循環時所產生之熱應力、使陶瓷基板11發生破裂之情事。 Further, a deformation resistance is formed on the first surface of the ceramic substrate 11. Since the aluminum layer 12A is relatively small, it is possible to suppress the aluminum layer 12A from absorbing the thermal stress generated during the thermal cycle of the load and causing the ceramic substrate 11 to be broken.

再者,在鋁層12A一方的面形成變形電阻較大之銅層12B,因而能夠抑制負荷熱循環時電路層12的變形、抑制接合半導體元件3與電路層12之焊錫層2的變形、使接合可信賴性提升。 Further, since the copper layer 12B having a large deformation resistance is formed on one surface of the aluminum layer 12A, deformation of the circuit layer 12 during load heat cycle can be suppressed, and deformation of the solder layer 2 of the bonding semiconductor element 3 and the circuit layer 12 can be suppressed. Bonding reliability is improved.

此外,熱傳導率良好的銅層12B是被形成在電路層12的一方側,因而,能夠散開來自半導體元件3的熱、有效率地傳達到電源模組用基板10側。 Further, since the copper layer 12B having a good thermal conductivity is formed on one side of the circuit layer 12, the heat from the semiconductor element 3 can be dissipated and efficiently transmitted to the power module substrate 10 side.

此外,在本實施型態,因為鋁層12A(鋁板22A)與鈦箔25、及銅板22B與鈦箔25之固相擴散接合,被做成於往層積方向被施加1~35kgf/cm2的壓力之狀態下藉由保持在600℃以上643℃以下而進行之構成,所以,能夠於鋁層與鈦層之界面並不使液相生成,而在鋁層12A及銅板22B中使鈦原子擴散、在鈦箔25中使鋁原子及銅原子固相擴散並固相擴散接合,將鋁層12A、鈦箔25、及銅板22B確實地接合。 Further, in the present embodiment, since the aluminum layer 12A (aluminum plate 22A) and the titanium foil 25, and the solid phase diffusion bonding of the copper plate 22B and the titanium foil 25 are formed, 1 to 35 kgf/cm 2 is applied in the lamination direction. In the state of the pressure, it is maintained at 600 ° C or higher and 643 ° C or lower. Therefore, the liquid phase can be formed at the interface between the aluminum layer and the titanium layer, and the titanium atom can be formed in the aluminum layer 12A and the copper plate 22B. Diffusion and solid phase diffusion of aluminum atoms and copper atoms in the titanium foil 25 are carried out by solid phase diffusion bonding, and the aluminum layer 12A, the titanium foil 25, and the copper plate 22B are surely joined.

在固相擴散接合時朝層積方向施加之壓力未滿1kgf/cm2之場合下,會使鋁層12A、鈦箔25、及銅板22B充分地接合變得不容易,而有在接合界面產生間隙之場合。此外,在超過35kgf/cm2之場合下,由於被負荷之荷重太高,而有在陶瓷基板11發生破裂之情事。依照此類之理由,固相擴散接合時所施加之壓力係被設定在上述 的範圍。 When the pressure applied in the lamination direction at the time of solid phase diffusion bonding is less than 1 kgf/cm 2 , it is not easy to sufficiently bond the aluminum layer 12A, the titanium foil 25, and the copper plate 22B, and it is generated at the joint interface. The occasion of the gap. Further, in the case of more than 35 kgf/cm 2 , the load on the ceramic substrate 11 is broken because the load due to the load is too high. For the reasons of this type, the pressure applied during solid phase diffusion bonding is set to the above range.

在固相擴散接合時的溫度為600℃以上之場合下,能夠促進鋁原子、鈦原子、及銅原子之擴散、於短時間下充分地使之固相擴散。此外,在643℃以下之場合,能夠抑制由鋁的溶融所造成的液相產生而在接合界面產生瘤、讓厚度變動之情事。因此,固相擴散接合最好的溫度範圍係被設定在上述的範圍。 When the temperature at the time of solid phase diffusion bonding is 600 ° C or more, diffusion of aluminum atoms, titanium atoms, and copper atoms can be promoted, and solid phase diffusion can be sufficiently sufficiently performed in a short time. Further, in the case of 643 ° C or less, it is possible to suppress the occurrence of liquid phase caused by the melting of aluminum and cause a tumor at the joint interface to change the thickness. Therefore, the optimum temperature range of the solid phase diffusion bonding is set in the above range.

此外,在進行固相擴散接合時,被接合的面有傷之場合下,會有在固相擴散接合時產生間隙之場合,本實施型態方面,因為鋁板22A、銅板22B、及鈦箔25被接合的面,係在事先將該面的傷除去、平滑化之後,被固相擴散接合,所以,可以抑制在各個接合界面產生間隙而加以接合。 Further, in the case where the bonded surface is damaged during the solid phase diffusion bonding, a gap may occur during the solid phase diffusion bonding. In the present embodiment, the aluminum plate 22A, the copper plate 22B, and the titanium foil 25 are used. Since the surface to be joined is removed and smoothed beforehand, the surface is diffusion-bonded by solid phase. Therefore, it is possible to suppress the occurrence of a gap at each joint interface and to join.

(第二實施型態) (Second embodiment)

其次,針對本發明之第二實施型態加以說明。又,針對與第一實施型態相同構成者,附以相同圖號並加以記載,省略詳細的說明。 Next, a second embodiment of the present invention will be described. The same components as those in the first embodiment are denoted by the same reference numerals and will not be described in detail.

圖5係顯示關於本發明第二實施型態之附散熱片之電源模組201。該附散熱片之電源模組201,係具備附散熱片之電源模組用基板230,與在此附散熱片之電源模組用基板230一方的面(圖5之上面)介著焊錫層2被接合之半導體元件3。 Fig. 5 is a view showing a power module 201 with a heat sink attached to a second embodiment of the present invention. The power module 201 with a heat sink is provided with a power module substrate 230 with a heat sink, and a solder layer 2 is provided on a surface (upper surface of FIG. 5) of the power module substrate 230 with a heat sink attached thereto. The semiconductor element 3 to be bonded.

附散熱片之電源模組用基板230,係具備:電源模組 用基板210、與在此電源模組用基板210的下側介著鈦層215被層積之散熱片231(金屬構件)。 The substrate 230 for the power module with the heat sink is provided with: a power module The substrate 210 and the heat sink 231 (metal member) laminated with the titanium layer 215 on the lower side of the power module substrate 210 are used.

電源模組用基板210,如圖5所示,具備:陶瓷基板11、被配設在此陶瓷基板11的第一面(圖5之上面)的電路層212、與被配設在陶瓷基板11的第二面(圖5之下面)的金屬層213(鋁層)。 As shown in FIG. 5, the power module substrate 210 includes a ceramic substrate 11, a circuit layer 212 disposed on a first surface (upper surface of FIG. 5) of the ceramic substrate 11, and a ceramic substrate 11 disposed thereon. A metal layer 213 (aluminum layer) on the second side (below the FIG. 5).

電路層212,係由在陶瓷基板11之第一面(圖5之上面)、被接合具有導電性的鋁板而被形成的。在本實施型態,電路層212係藉由接合純度99.99質量%以上的鋁(4N鋁)的壓延板而被形成。又,被接合的鋁板的厚度被設定在0.1mm以上1.0mm以下的範圍內,本實施型態是被設定在0.6mm。 The circuit layer 212 is formed by bonding an aluminum plate having conductivity to the first surface (upper surface of FIG. 5) of the ceramic substrate 11. In the present embodiment, the circuit layer 212 is formed by joining a rolled plate of aluminum (4N aluminum) having a purity of 99.99% by mass or more. Further, the thickness of the joined aluminum plate is set to be in the range of 0.1 mm or more and 1.0 mm or less, and the present embodiment is set to 0.6 mm.

金屬層213,係在陶瓷基板11的第二面(圖5之下面),藉由接合具有導電性之由鋁或鋁合金所構成之鋁板而被形成。在本實施型態,金屬層213係藉由接合純度99質量%以上的鋁(2N鋁)的壓延板而被形成。前述純度99質量%以上的鋁的壓延板,可以含有0.08質量%以上0.95質量%以下的矽。又,被接合的鋁板的厚度被設定在0.1mm以上3.0mm以下的範圍內,本實施型態是被設定在0.6mm。 The metal layer 213 is formed on the second surface (below the FIG. 5) of the ceramic substrate 11, and is formed by joining an aluminum plate made of aluminum or aluminum alloy having conductivity. In the present embodiment, the metal layer 213 is formed by joining a rolled plate of aluminum (2N aluminum) having a purity of 99% by mass or more. The rolled sheet of aluminum having a purity of 99% by mass or more may contain 0.08 mass% or more and 0.95 mass% or less of rhodium. Further, the thickness of the joined aluminum plate is set to be in the range of 0.1 mm or more and 3.0 mm or less, and the present embodiment is set to 0.6 mm.

散熱片231係用以將電源模組用基板210側的熱放散之裝置。散熱片231係由銅或銅合金所構成,本實施型態係由無氧銅所構成的。在此散熱片231,設著供冷卻用流體流動用之流路232。 The heat sink 231 is a device for dissipating heat on the side of the power module substrate 210. The heat sink 231 is made of copper or a copper alloy, and this embodiment is composed of oxygen-free copper. The fin 231 is provided with a flow path 232 for flowing a cooling fluid.

接著,該等金屬層213與散熱片231是介著鈦層215而被接合起來。 Next, the metal layers 213 and the heat sink 231 are joined via the titanium layer 215.

鈦層215,係藉由讓由鋁所構成的金屬層213、與由銅所構成的散熱片231介著鈦箔被層積、被固相擴散接合而被形成的。此鈦箔的純度被設在99%以上。鈦箔的厚度被設定在3μm以上40μm以下,本實施型態係設定在10μm。 The titanium layer 215 is formed by laminating a metal layer 213 made of aluminum and a heat sink 231 made of copper through a titanium foil and being solid-phase diffusion bonded. The purity of this titanium foil is set to 99% or more. The thickness of the titanium foil is set to 3 μm or more and 40 μm or less, and the present embodiment is set to 10 μm.

接著,在金屬層213與鈦層215之接合界面,如圖6所示,形成在Al3Ti讓矽固溶之鋁-鈦-矽層216。 Next, at the joint interface between the metal layer 213 and the titanium layer 215, as shown in FIG. 6, an aluminum-titanium-tantalum layer 216 in which Al 3 Ti is solid-solved is formed.

鋁-鈦-矽層216,係藉由金屬層213的鋁原子、與鈦層215的鈦原子相互擴散而被形成的。鋁-鈦-矽層216的厚度被設定在0.5μm以上10μm以下,本實施型態係設為3μm。該鋁-鈦-矽層216,係如圖6所示,具備被形成在鈦層215側之第一鋁-鈦-矽層216A、與被形成在金屬層213側之第二鋁-鈦-矽層216B。亦即,在金屬層213與散熱片231之接合部,被形成鈦層215、第一鋁-鈦-矽層216A、與第二鋁-鈦-矽層216B。 The aluminum-titanium-tantalum layer 216 is formed by interdiffusion of aluminum atoms of the metal layer 213 and titanium atoms of the titanium layer 215. The thickness of the aluminum-titanium-tantalum layer 216 is set to 0.5 μm or more and 10 μm or less, and the present embodiment is set to 3 μm. The aluminum-titanium-tantalum layer 216, as shown in FIG. 6, has a first aluminum-titanium-tantalum layer 216A formed on the side of the titanium layer 215 and a second aluminum-titanium layer formed on the side of the metal layer 213. Layer 216B. That is, a titanium layer 215, a first aluminum-titanium-tantalum layer 216A, and a second aluminum-titanium-tantalum layer 216B are formed at the joint portion of the metal layer 213 and the heat sink 231.

這些、第一鋁-鈦-矽層216A與第二鋁-鈦-矽層216B,係由在Al3Ti讓矽固溶之鋁-鈦-矽相所構成;第二鋁-鈦-矽層216B之矽濃度、是比第一鋁-鈦-矽層216A之矽濃度還低。 The first aluminum-titanium-tantalum layer 216A and the second aluminum-titanium-tantalum layer 216B are composed of an aluminum-titanium-niobium phase which is solid-solved in Al 3 Ti; the second aluminum-titanium-niobium layer The 矽 concentration at 216B is lower than the ruthenium concentration of the first aluminum-titanium-tantalum layer 216A.

第一鋁-鈦-矽層216A之矽濃度係被設在10at%以上30at%以下,本實施型態係設在20at%。第二鋁-鈦-矽層216B之矽濃度係被設在1at%以上10at%以下,本實施型 態係設在3at%。 The ruthenium concentration of the first aluminum-titanium-tantalum layer 216A is set to 10 at% or more and 30 at% or less, and the present embodiment is set at 20 at%. The concentration of the second aluminum-titanium-tantalum layer 216B is set to be 1 at% or more and 10 at% or less. This embodiment The state is set at 3at%.

其次,針對本實施型態之附散熱片之電源模組201、附散熱片之電源模組用基板230之製造方法,參照圖7及圖8加以說明。 Next, a method of manufacturing the power module 201 with a heat sink according to the present embodiment and a substrate 230 for a power module with a heat sink will be described with reference to FIGS. 7 and 8.

首先,如圖8所示,在陶瓷基板11的第一面,介著鋁-矽系焊材箔26,層積成為電路層212之鋁板222。此外,在陶瓷基板11的第二面,介著焊材箔26層積成為金屬層213之鋁板223。接著,在陶瓷基板11的第二面側(圖8之下側),再介著鈦箔225層積散熱片231(鋁板及散熱片層積步驟S211)。 First, as shown in FIG. 8, an aluminum plate 222 which is a circuit layer 212 is laminated on the first surface of the ceramic substrate 11 via the aluminum-bismuth-based solder material foil 26. Further, on the second surface of the ceramic substrate 11, an aluminum plate 223 which is a metal layer 213 is laminated via the solder material foil 26. Next, on the second surface side (the lower side in FIG. 8) of the ceramic substrate 11, the fins 231 (the aluminum plate and the fin stacking step S211) are laminated via the titanium foil 225.

其次,於朝鋁板222、223、陶瓷基板11、及散熱片231之層積方向加壓(壓力1~35kgf/cm2)之狀態下配置在真空加熱爐內加熱,在陶瓷基板11的第一面及第二面,形成電路層212及金屬層213,而且,將金屬層213與鈦箔225、及散熱片231與鈦箔225固相擴散接合,接合金屬層213與散熱片231(電路層、金屬層、及散熱片接合步驟S212)。 Then, it is placed in a vacuum heating furnace in a state where the aluminum plates 222 and 223, the ceramic substrate 11, and the heat sink 231 are pressurized (pressure: 1 to 35 kgf/cm 2 ), and is heated in the vacuum heating furnace. The circuit layer 212 and the metal layer 213 are formed on the surface and the second surface, and the metal layer 213 and the titanium foil 225 and the heat sink 231 are solid-phase diffusion bonded to the titanium foil 225, and the metal layer 213 and the heat sink 231 are bonded (circuit layer , the metal layer, and the heat sink bonding step S212).

此處,最好是將真空加熱爐內的壓力設定於10-6Pa以上10-3Pa以下之範圍內,加熱溫度設定為600℃以上643℃以下,保持時間則設定在30分鐘以上180分鐘以下之範圍內。此外,更好的加熱溫度係被設在630℃以上643℃以下之範圍內。本實施型態,係朝層積方向負荷20kgf/cm2的壓力,於加熱溫度640℃、保持時間60分鐘之條件下實施。 Here, it is preferable to set the pressure in the vacuum heating furnace to a range of 10 -6 Pa or more and 10 -3 Pa or less, a heating temperature of 600 ° C or more and 643 ° C or less, and a holding time of 30 minutes or more and 180 minutes. Within the scope below. Further, a better heating temperature is set in the range of 630 ° C or more and 643 ° C or less. In the present embodiment, the pressure was 20 kgf/cm 2 in the direction of the lamination, and the temperature was 640 ° C and the holding time was 60 minutes.

又,鋁板223、鈦箔225、及散熱片231被接合的各個面,係在事先把該面的傷除去、平滑化之後,被固相擴散接合。 Further, each of the surfaces on which the aluminum plate 223, the titanium foil 225, and the fins 231 are joined is subjected to solid phase diffusion bonding after removing and smoothing the damage on the surface.

如上述作法,製造本實施型態之附散熱片之電源模組用基板230及電源模組用基板210。 According to the above-described method, the power module substrate 230 and the power module substrate 210 with the heat sink of the present embodiment are manufactured.

其次,在附散熱片之電源模組用基板230(電路層212)一方的面,介著焊錫材層積半導體元件3,在還原爐內進行焊錫接合(半導體元件接合步驟S213)。 Then, on one surface of the power module substrate 230 (circuit layer 212) to which the heat sink is attached, the semiconductor element 3 is laminated via the solder material, and solder bonding is performed in the reduction furnace (semiconductor element bonding step S213).

如上述作法,製造本實施型態之附散熱片之電源模組用基板201。 According to the above-described method, the substrate 201 for a power module with a heat sink according to the present embodiment is manufactured.

根據關於做成以上之類的構成之本實施型態之附散熱片之電源模組201及附散熱片之電源模組用基板230,在金屬層213與散熱片231之接合部,係做成形成鈦層215、與鋁-鈦-矽層216之構成,並未形成硬的鋁-鈦-銅層或鋁-鈦層,因而,能夠在負荷熱循環時,抑制在金屬層213與散熱片231之接合部發生龜裂之情事。從而,在附散熱片之電源模組201,可以提升金屬層213與散熱片231之接合可信賴性。 The power module 201 with the heat sink attached to the present embodiment having the above-described configuration and the power module substrate 230 with the heat sink are formed at the joint portion between the metal layer 213 and the heat sink 231. The titanium layer 215 and the aluminum-titanium-tantalum layer 216 are formed, and a hard aluminum-titanium-copper layer or an aluminum-titanium layer is not formed, so that the metal layer 213 and the heat sink can be suppressed during load thermal cycling. Crack occurred in the joint of 231. Therefore, in the power module 201 with the heat sink, the bonding reliability of the metal layer 213 and the heat sink 231 can be improved.

再者,由於被形成在鈦層215側之第一鋁-鈦-矽層216A之矽濃度、比被形成在金屬層213側之第二鋁-鈦-矽層216B之矽濃度還高,所以,能夠抑制利用矽濃度較高的第一鋁-鈦-矽層216A讓鈦原子擴散至金屬層213,可薄化鋁-鈦-矽層216之厚度。 Further, since the concentration of the first aluminum-titanium-tantalum layer 216A formed on the side of the titanium layer 215 is higher than the concentration of the second aluminum-titanium-tantalum layer 216B formed on the side of the metal layer 213, It is possible to suppress the diffusion of titanium atoms to the metal layer 213 by using the first aluminum-titanium-tantalum layer 216A having a high niobium concentration, and to thin the thickness of the aluminum-titanium-tantalum layer 216.

此外,本實施型態,能夠在陶瓷基板11之第 一面及第二面,形成電路層212及金屬層213,進而同時接合金屬層213與散熱片231,因而,能夠簡略化製造步驟、可以減低製造成本。 In addition, in this embodiment, the ceramic substrate 11 can be The circuit layer 212 and the metal layer 213 are formed on one surface and the second surface, and the metal layer 213 and the heat sink 231 are joined at the same time. Therefore, the manufacturing steps can be simplified and the manufacturing cost can be reduced.

此外,如圖9(第三實施型態)所示,金屬層313,也可以做成具有:被形成在陶瓷基板11的第二面的鋁層313A,與在鋁層313A之中與接合陶瓷基板11的面相反側的面、介著鈦層315被固相擴散接合之銅層313B之構成。 Further, as shown in FIG. 9 (third embodiment), the metal layer 313 may be formed to have an aluminum layer 313A formed on the second surface of the ceramic substrate 11, and a bonding ceramic in the aluminum layer 313A. The surface of the substrate 11 opposite to the surface is formed by a copper layer 313B in which the titanium layer 315 is solid-phase diffusion bonded.

具備此金屬層313之電源模組301,在負荷熱循環時,能夠抑制利用鋁層313A吸收陶瓷基板11所產生之熱應力、使陶瓷基板11發生破裂。此外,在鋁層313A的下側被形成銅層313B,因而,能夠有效率地將來自半導體元件3側的熱放散。 The power module 301 including the metal layer 313 can suppress the thermal stress generated by the aluminum substrate 313A from absorbing the ceramic substrate 11 during the thermal cycle of the load, and can cause the ceramic substrate 11 to be broken. Further, since the copper layer 313B is formed on the lower side of the aluminum layer 313A, heat from the side of the semiconductor element 3 can be efficiently dissipated.

此外,在第一實施型態,針對金屬層由鋁或鋁合金所構成之場合加以說明,但並非受限於此,也可以銅或銅合金來構成。 Further, in the first embodiment, the case where the metal layer is composed of aluminum or an aluminum alloy will be described, but the present invention is not limited thereto, and may be formed of copper or a copper alloy.

此外,在第二實施型態,針對金屬層由鋁或鋁合金所構成、散熱片由銅或銅合金所構成之場合加以說明,但並非受限於此,也可以是金屬層由銅或銅合金所構成、散熱片由鋁或鋁合金所構成。 Further, in the second embodiment, the case where the metal layer is composed of aluminum or an aluminum alloy and the heat sink is composed of copper or a copper alloy will be described, but it is not limited thereto, and the metal layer may be made of copper or copper. The alloy is composed of a heat sink made of aluminum or aluminum alloy.

此外,在第一實施型態,層積成為鋁層的鋁板在其上介著鈦箔層積成為銅層的銅板進行加壓、加熱形成電路層,但是,可以取代銅板而採用由銅所構成的引線框架(lead frame,金屬構件)。 Further, in the first embodiment, the aluminum plate laminated with the aluminum layer is pressed and heated to form a circuit layer on the copper plate on which the titanium foil is laminated as a copper layer. However, instead of the copper plate, copper may be used. Lead frame (metal member).

(第五實施型態) (Fifth embodiment)

圖13係顯示關於本發明第五實施型態之附散熱片之電源模組501。 Fig. 13 is a view showing a power supply module 501 with a heat sink attached to a fifth embodiment of the present invention.

附散熱片之電源模組501,係具備附散熱片之電源模組用基板530,與在此附散熱片之電源模組用基板530一方的面(圖13之上面)介著焊錫層2被接合之半導體元件3。 The power module 501 with a heat sink is provided with a power module substrate 530 with a heat sink, and a surface of the power module substrate 530 to which the heat sink is attached (the upper surface of FIG. 13) is sandwiched by the solder layer 2 Bonded semiconductor component 3.

附散熱片之電源模組用基板530,係具備:電源模組用基板510、與在此電源模組用基板510的下側介著焊錫層535被接合之散熱片531。 The power module substrate 530 with a heat sink includes a power module substrate 510 and a heat sink 531 that is bonded to the lower side of the power module substrate 510 via a solder layer 535.

電源模組用基板510,如圖14所示,係具備:構成絕緣層之陶瓷基板511,被配設在此陶瓷基板511一方的面(圖14之上面、第一面)之電路層512,與被配設在陶瓷基板511另一方的面(圖15之下面、第二面)之金屬層513。 As shown in FIG. 14, the power module substrate 510 includes a ceramic substrate 511 constituting an insulating layer, and a circuit layer 512 disposed on one surface (the upper surface and the first surface of FIG. 14) of the ceramic substrate 511. The metal layer 513 is disposed on the other surface (the lower surface and the second surface of FIG. 15) of the ceramic substrate 511.

陶瓷基板511係由絕緣性高的AlN(氮化鋁)、Si3N4(氮化矽)、Al2O3(氧化鋁)等所構成。本實施型態中,係由放熱性佳之AlN(氮化鋁)所構成。此外,陶瓷基板511的厚度被設定在0.2~1.5mm之範圍內,在本實施型態被設定為0.635mm。 The ceramic substrate 511 is made of AlN (aluminum nitride), Si 3 N 4 (tantalum nitride), Al 2 O 3 (alumina) or the like having high insulating properties. In this embodiment, it is composed of AlN (aluminum nitride) which is excellent in heat dissipation. Further, the thickness of the ceramic substrate 511 is set to be in the range of 0.2 to 1.5 mm, and is set to 0.635 mm in this embodiment.

電路層512,係在陶瓷基板511的第一面(圖14之上面),藉由接合由鋁或鋁合金所構成的鋁板而被形成。在本實施型態,電路層512,係由純度為99%以上 的鋁(2N鋁)之壓延板被接合在陶瓷基板511而形成的。又,成為電路層512的鋁板的厚度被設定在0.1mm以上1.0mm以下的範圍內,本實施型態是被設定在0.6mm。 The circuit layer 512 is formed on the first surface (upper surface of FIG. 14) of the ceramic substrate 511 by joining an aluminum plate made of aluminum or aluminum alloy. In this embodiment, the circuit layer 512 is made of a purity of 99% or more. A rolled sheet of aluminum (2N aluminum) is bonded to the ceramic substrate 511. Further, the thickness of the aluminum plate to be the circuit layer 512 is set to be in the range of 0.1 mm or more and 1.0 mm or less, and the present embodiment is set to 0.6 mm.

金屬層513,如圖13所示,係具有被配設在陶瓷基板511的第二面(圖14之下面)之鋁層513A、與在此鋁層513A之中與被接合陶瓷基板511的面相反側的面介著鈦層515被層積之銅層513B(金屬構件層)。 As shown in FIG. 13, the metal layer 513 has an aluminum layer 513A disposed on the second surface (below the FIG. 14) of the ceramic substrate 511, and a surface of the aluminum layer 513A and the bonded ceramic substrate 511. The opposite side faces the copper layer 513B (metal member layer) in which the titanium layer 515 is laminated.

鋁層513A,係在陶瓷基板511的第二面,藉由把由鋁或鋁合金所構成的鋁板接合而被形成。在本實施型態,鋁層513A係藉由接合純度99質量%以上的鋁(所謂的2N鋁)的壓延板而被形成。前述純度99質量%以上的鋁的壓延板,可以含有0.08質量%以上0.95質量%以下的矽。又,被接合的鋁板的厚度被設定在0.1mm以上3.0mm以下的範圍內,本實施型態是被設定在0.6mm。 The aluminum layer 513A is formed on the second surface of the ceramic substrate 511 by bonding an aluminum plate made of aluminum or aluminum alloy. In the present embodiment, the aluminum layer 513A is formed by joining a rolled plate of aluminum (so-called 2N aluminum) having a purity of 99% by mass or more. The rolled sheet of aluminum having a purity of 99% by mass or more may contain 0.08 mass% or more and 0.95 mass% or less of rhodium. Further, the thickness of the joined aluminum plate is set to be in the range of 0.1 mm or more and 3.0 mm or less, and the present embodiment is set to 0.6 mm.

銅層513B,係在鋁層513A之中與被形成陶瓷基板511的面相反側的面(圖14之下面),介著鈦層515接合由銅或銅合金所構成的銅板而被形成。在本實施型態,銅層513B係藉由讓無氧銅的壓延板在鋁層513A、介著鈦箔加以固相擴散接合而被形成。 The copper layer 513B is formed on a surface (the lower surface in FIG. 14) of the aluminum layer 513A opposite to the surface on which the ceramic substrate 511 is formed, and a copper plate made of copper or a copper alloy is bonded to the titanium layer 515. In the present embodiment, the copper layer 513B is formed by solid-phase diffusion bonding of the rolled sheet of oxygen-free copper on the aluminum layer 513A via the titanium foil.

又,被接合的銅板的厚度被設定在0.1mm以上6.0mm以下的範圍內,本實施型態是被設定在0.3mm。 Further, the thickness of the joined copper plate is set to be in the range of 0.1 mm or more and 6.0 mm or less, and the present embodiment is set to 0.3 mm.

鈦層515,係藉由讓鋁層513A與銅板介著鈦箔被層積、被固相擴散接合而被形成的。在此,鈦箔的純 度被設在99%以上。此外,鈦箔的厚度被設定在3μm以上40μm以下,本實施型態中,設定在15μm。 The titanium layer 515 is formed by laminating the aluminum layer 513A and the copper plate via the titanium foil and being solid-phase diffusion bonded. Here, the purity of the titanium foil The degree is set at 99% or more. Further, the thickness of the titanium foil is set to be 3 μm or more and 40 μm or less, and in the present embodiment, it is set to 15 μm.

接著,在鋁層513A與鈦層515之接合界面,如圖15所示,形成在Al3Ti讓矽固溶之鋁-鈦-矽層516。 Next, at the joint interface between the aluminum layer 513A and the titanium layer 515, as shown in FIG. 15, an aluminum-titanium-ruthenium layer 516 in which Al 3 Ti is solid-solved is formed.

鋁-鈦-矽層516,係藉由鋁層512A的鋁原子、與鈦層515的鈦原子相互擴散而被形成的。鋁-鈦-矽層516的厚度被設定在0.5μm以上10μm以下,本實施型態係設為5μm。 The aluminum-titanium-tantalum layer 516 is formed by interdiffusion of aluminum atoms of the aluminum layer 512A and titanium atoms of the titanium layer 515. The thickness of the aluminum-titanium-tantalum layer 516 is set to 0.5 μm or more and 10 μm or less, and the present embodiment is set to 5 μm.

該鋁-鈦-矽層516,係如圖15所示,具備被形成在鈦層515側之第一鋁-鈦-矽層516A、與被形成在鋁層513A側之第二鋁-鈦-矽層516B。亦即,在鋁層513A與銅層513B之接合部,被形成鈦層515、第一鋁-鈦-矽層516A、與第二鋁-鈦-矽層516B。 The aluminum-titanium-tantalum layer 516 is provided with a first aluminum-titanium-tantalum layer 516A formed on the side of the titanium layer 515 and a second aluminum-titanium formed on the side of the aluminum layer 513A as shown in FIG. Layer 516B. That is, a titanium layer 515, a first aluminum-titanium-tantalum layer 516A, and a second aluminum-titanium-tantalum layer 516B are formed at the joint portion between the aluminum layer 513A and the copper layer 513B.

這些、第一鋁-鈦-矽層516A與第二鋁-鈦-矽層516B,係由在Al3Ti讓矽固溶之鋁-鈦-矽相所構成;第二鋁-鈦-矽層516B之矽濃度、是比第一鋁-鈦-矽層516A之矽濃度還低。又,在本實施型態,第一鋁-鈦-矽層516A及第二鋁-鈦-矽層516B所包含之矽,係指在2N-鋁的壓延板中讓作為不純物所包含之矽在鋁-鈦-矽層516中擴散、濃化者。 The first aluminum-titanium-ruthenium layer 516A and the second aluminum-titanium-ruthenium layer 516B are composed of an aluminum-titanium-ruthenium phase in which Al 3 Ti is solid-solved; the second aluminum-titanium-ruthenium layer The 矽 concentration at 516B is lower than the ruthenium concentration of the first aluminum-titanium-ruthenium layer 516A. Further, in the present embodiment, the first aluminum-titanium-tantalum layer 516A and the second aluminum-titanium-tantalum layer 516B are included in the 2N-aluminum rolled sheet, and are contained as impurities. The aluminum-titanium-tantalum layer 516 is diffused and concentrated.

第一鋁-鈦-矽層516A之矽濃度係被設在10at%以上30at%以下,本實施型態係設在20at%。第二鋁-鈦-矽層516B之矽濃度係被設在1at%以上10at%以下,本實施型態係設在3at%。 The ruthenium concentration of the first aluminum-titanium-ruthenium layer 516A is set to 10 at% or more and 30 at% or less, and the present embodiment is set at 20 at%. The ruthenium concentration of the second aluminum-titanium-tantalum layer 516B is set to be 1 at% or more and 10 at% or less, and the present embodiment is set at 3 at%.

半導體元件3係由矽等半導體材料所構成。該半導體元件3與電路層512是介著焊錫層2被接合起來。 The semiconductor element 3 is made of a semiconductor material such as germanium. The semiconductor element 3 and the circuit layer 512 are bonded to each other via the solder layer 2.

焊錫層2係設定為例如錫-銀系、錫-銅系、錫-銦系、或者錫-銀-銅系的焊錫材(所謂無鉛焊錫材),將電源模組用基板510與半導體元件3接合者。 The solder layer 2 is set to, for example, a tin-silver type, a tin-copper type, a tin-indium type, or a tin-silver-copper type solder material (so-called lead-free solder material), and the power module substrate 510 and the semiconductor element 3 are used. Joiner.

散熱片531係用以將電源模組用基板510側的熱放散之裝置。散熱片531係由銅或銅合金所構成,本實施型態係由無氧銅所構成的。在此散熱片531,設著供冷卻用流體流動用之流路532。 The heat sink 531 is a device for dissipating heat on the power module substrate 510 side. The heat sink 531 is made of copper or a copper alloy, and this embodiment is composed of oxygen-free copper. Here, the fin 531 is provided with a flow path 532 for flowing a cooling fluid.

焊錫層535,與焊錫層2同樣地,係設定為例如錫-銀系、錫-銅系、錫-銦系、或者錫-銀-銅系的焊錫材(所謂無鉛焊錫材),將電源模組用基板510與散熱片531接合者。 Similarly to the solder layer 2, the solder layer 535 is set to, for example, a tin-silver-based, tin-copper-based, tin-indium-based, or tin-silver-copper-based solder material (so-called lead-free solder material). The group substrate 510 is bonded to the heat sink 531.

其次,參照圖16及圖17說明本實施型態之附散熱片之電源模組501之製造方法。 Next, a method of manufacturing the power module 501 with a heat sink according to the present embodiment will be described with reference to Figs. 16 and 17 .

首先,如圖17所示,在陶瓷基板511的第一面層積成為電路層512之鋁板522。另一方面,在陶瓷基板511的第二面層積成為鋁層513A之鋁板523A,進而在其上介著鈦箔525層積成為銅層513B之銅板523B(鋁板及銅板層積步驟S501)。此處,本實施型態,係在鋁板522、523A與陶瓷基板511之間、介著鋁-矽系的焊材箔526而層積。 First, as shown in FIG. 17, an aluminum plate 522 which becomes the circuit layer 512 is laminated on the first surface of the ceramic substrate 511. On the other hand, the aluminum plate 523A of the aluminum layer 513A is laminated on the second surface of the ceramic substrate 511, and the copper plate 523B (the aluminum plate and the copper plate lamination step S501) in which the copper layer 513B is laminated on the titanium foil 525 is further formed thereon. Here, in the present embodiment, the aluminum plates 522 and 523A and the ceramic substrate 511 are laminated via the aluminum-lanthanum-based solder material foil 526.

其次,於朝層積方向加壓(壓力1~ 35kgf/cm2)之狀態下配置在真空加熱爐內予以加熱、形成電路層512及鋁層513A,而且,將鋁層513A與鈦箔525、及銅板523B與鈦箔525固相擴散接合,形成電路層512及金屬層513(電路層及金屬層形成步驟S502)。 Then, it is placed in a vacuum heating furnace in a state of being pressurized (pressure: 1 to 35 kgf/cm 2 ) to form a circuit layer 512 and an aluminum layer 513A, and the aluminum layer 513A and the titanium foil 525 are The copper plate 523B and the titanium foil 525 are solid-phase diffusion bonded to form a circuit layer 512 and a metal layer 513 (circuit layer and metal layer forming step S502).

此處,最好是將真空加熱爐內的壓力設定於10-6Pa以上10-3Pa以下之範圍內,加熱溫度設定為600℃以上643℃以下,保持時間則設定在30分鐘以上180分鐘以下之範圍內。此外,更好的加熱溫度係被設在630℃以上643℃以下之範圍內。本實施型態,係朝層積方向負荷12kgf/cm2的壓力,於加熱溫度640℃、保持時間60分鐘之條件下實施。 Here, it is preferable to set the pressure in the vacuum heating furnace to a range of 10 -6 Pa or more and 10 -3 Pa or less, a heating temperature of 600 ° C or more and 643 ° C or less, and a holding time of 30 minutes or more and 180 minutes. Within the scope below. Further, a better heating temperature is set in the range of 630 ° C or more and 643 ° C or less. In the present embodiment, the pressure was 12 kgf/cm 2 in the laminating direction, and the temperature was 640 ° C and the holding time was 60 minutes.

又,鋁板523A、鈦箔525、及銅板523B被接合的各個面,係在事先把該面的傷除去、平滑化之後,被固相擴散接合。 Further, each of the surfaces on which the aluminum plate 523A, the titanium foil 525, and the copper plate 523B are joined is subjected to solid phase diffusion bonding after the damage of the surface is removed and smoothed.

如上述作法,製造本實施型態之電源模組用基板510。 The substrate 510 for a power module of the present embodiment is manufactured as described above.

其次,在電源模組用基板510的金屬層513、介著焊錫材層積散熱片531,在還原爐內進行焊錫接合(散熱片接合步驟S503)。 Then, the metal layer 513 of the power module substrate 510 and the solder material laminated heat sink 531 are laminated to perform solder bonding in the reduction furnace (heat sink bonding step S503).

如此作法,製造本實施型態之附散熱片之電源模組用基板530。 In this manner, the substrate 530 for the power module with the heat sink of the present embodiment is manufactured.

其次,在電路層512一方的面(表面),介著焊錫材層積半導體元件3,在還原爐內進行焊錫接合(半導體元件接合步驟S504)。 Then, on the surface (surface) of one of the circuit layers 512, the semiconductor element 3 is laminated via a solder material, and solder bonding is performed in the reduction furnace (semiconductor element bonding step S504).

如上述作法,製造本實施型態之附散熱片之電源模組501。 As described above, the power module 501 with the heat sink of this embodiment is manufactured.

根據關於做成以上之類的構成之本實施型態之附散熱片之電源模組501、附散熱片之電源模組用基板530、及電源模組用基板510,在金屬層513在鋁層513A與銅層513B之接合部,係做成鈦層515、與鋁-鈦-矽層516被形成之構成,並未形成硬的鋁-鈦-銅層或鋁-鈦層,因而,能夠在負荷熱循環時,抑制使金屬層513發生龜裂之情事。從而,能夠使電源模組用基板510與散熱片531之接合可信賴性提升。 According to the present invention, the power supply module 501 with the heat sink of the present embodiment, the power supply module substrate 530 with the heat sink, and the power supply module substrate 510 are formed on the metal layer 513 in the aluminum layer. The joint portion between the 513A and the copper layer 513B is formed by forming the titanium layer 515 and the aluminum-titanium-tantalum layer 516, and does not form a hard aluminum-titanium-copper layer or an aluminum-titanium layer. When the load is thermally circulated, the cracking of the metal layer 513 is suppressed. Therefore, the reliability of bonding of the power module substrate 510 and the heat sink 531 can be improved.

再者,由於被形成在鈦層515側之第一鋁-鈦-矽層516A之矽濃度、比被形成在鋁層513A側之第二鋁-鈦-矽層516B之矽濃度還高,所以,能夠抑制利用矽濃度較高的第一鋁-鈦-矽層516A讓鈦原子擴散至鋁層513A側,可薄化鋁-鈦-矽層516之厚度。接著,藉由以此方式薄化鋁-鈦-矽層516之厚度,可以抑制在負荷熱循環時在鋁層513A與銅層513B之接合部發生龜裂之情事。 Further, since the germanium concentration of the first aluminum-titanium-germanium layer 516A formed on the side of the titanium layer 515 is higher than the germanium concentration of the second aluminum-titanium-germanium layer 516B formed on the side of the aluminum layer 513A, It is possible to suppress the diffusion of titanium atoms to the side of the aluminum layer 513A by using the first aluminum-titanium-tantalum layer 516A having a high niobium concentration, and to thin the thickness of the aluminum-titanium-tantalum layer 516. Then, by thinning the thickness of the aluminum-titanium-tantalum layer 516 in this manner, it is possible to suppress the occurrence of cracking at the joint portion between the aluminum layer 513A and the copper layer 513B during the thermal cycle of the load.

此外,被形成在鋁層513A側的第二鋁-鈦-矽層516B所含的矽濃度被設為1at%以上10at%以下,因而,能夠抑制鋁原子過度地擴散至鈦層515側,可薄化第二鋁-鈦-矽層516B之厚度。 Further, the concentration of germanium contained in the second aluminum-titanium-tantalum layer 516B formed on the side of the aluminum layer 513A is set to be 1 at% or more and 10 at% or less. Therefore, it is possible to suppress excessive diffusion of aluminum atoms to the side of the titanium layer 515. The thickness of the second aluminum-titanium-tantalum layer 516B is thinned.

再者,被形成在鈦層515側的第一鋁-鈦-矽層516A所含的矽濃度被設為10at%以上30at%以下,因而,能夠抑制鈦原子過度地擴散至鋁層513A側,可薄化第一鋁-鈦 -矽層516A之厚度。 In addition, the concentration of ruthenium contained in the first aluminum-titanium-tantalum layer 516A formed on the side of the titanium layer 515 is set to be 10 at% or more and 30 at% or less. Therefore, it is possible to suppress excessive diffusion of titanium atoms to the side of the aluminum layer 513A. Can thin the first aluminum-titanium - the thickness of the layer 516A.

此外,本實施型態,係做成在陶瓷基板511的第一面及第二面,將鋁板523A、鈦箔525、銅板523B、及鋁板522同時接合之構成,因而,能夠簡略化製造步驟,可減低製造成本。 Further, in the present embodiment, the aluminum plate 523A, the titanium foil 525, the copper plate 523B, and the aluminum plate 522 are simultaneously joined to each other on the first surface and the second surface of the ceramic substrate 511. Therefore, the manufacturing steps can be simplified. Can reduce manufacturing costs.

此外,在陶瓷基板511的第二面形成變形電阻比較小的鋁層513A,因而,能夠抑制鋁層513A吸收負荷熱循環時所產生之熱應力、使陶瓷基板511發生破裂之情事。 Further, since the aluminum layer 513A having a relatively small deformation resistance is formed on the second surface of the ceramic substrate 511, it is possible to prevent the aluminum layer 513A from absorbing the thermal stress generated during the load thermal cycle and causing the ceramic substrate 511 to be broken.

再者,在鋁層513A之中與被形成陶瓷基板511的面相反側的面、形成變形電阻較大之銅層513B,因而能夠抑制負荷熱循環時金屬層513的變形、抑制接合金屬層513與散熱片531之焊錫層535的變形、使接合可信賴性提升。 Further, since the copper layer 513B having a large deformation resistance is formed on the surface of the aluminum layer 513A opposite to the surface on which the ceramic substrate 511 is formed, deformation of the metal layer 513 during the load heat cycle and suppression of the bonding metal layer 513 can be suppressed. The deformation of the solder layer 535 with the heat sink 531 improves the reliability of the joint.

此外,在本實施型態,因為鋁層513A(鋁板523A)與鈦箔525、及銅板523B與鈦箔525之固相擴散接合,被做成於往層積方向被施加1~35kgf/cm2的壓力之狀態下藉由保持在600℃以上643℃以下而進行之構成,所以,能夠在鋁層513A及銅板523B中使鈦原子擴散、在鈦箔525中使鋁原子及銅原子固相擴散並固相擴散接合,將鋁層513A、鈦箔525、及銅板523B確實地接合。 Further, in the present embodiment, since the aluminum layer 513A (aluminum plate 523A) and the titanium foil 525, and the solid phase diffusion bonding of the copper plate 523B and the titanium foil 525 are formed, 1 to 35 kgf/cm 2 is applied in the lamination direction. By maintaining the temperature at 600 ° C or higher and 643 ° C or lower, it is possible to diffuse titanium atoms in the aluminum layer 513A and the copper plate 523B, and to diffuse aluminum atoms and copper atoms in the titanium foil 525. The aluminum layer 513A, the titanium foil 525, and the copper plate 523B are surely joined by solid phase diffusion bonding.

在固相擴散接合時朝層積方向施加之壓力未滿1kgf/cm2之場合下,會使鋁層513A、鈦箔525、及銅板523B充分地接合變得不容易,而有在接合界面產生間 隙之場合。此外,在超過35kgf/cm2之場合下,由於被負荷之荷重太高,而有在陶瓷基板511發生破裂之情事。依照此類之理由,固相擴散接合時所施加之壓力係被設定在上述的範圍。 When the pressure applied in the lamination direction at the time of solid phase diffusion bonding is less than 1 kgf/cm 2 , it is not easy to sufficiently bond the aluminum layer 513A, the titanium foil 525, and the copper plate 523B, and it is generated at the joint interface. The occasion of the gap. Further, in the case where it exceeds 35 kgf/cm 2 , the load on the ceramic substrate 511 is broken because the load due to the load is too high. For the reasons of this type, the pressure applied during solid phase diffusion bonding is set to the above range.

在固相擴散接合時的溫度為600℃以上之場合下,能夠促進鋁原子、鈦原子、及銅原子之擴散、於短時間下充分地使之固相擴散。此外,在643℃以下之場合,能夠抑制由鋁的溶融所造成的液相產生而在接合界面產生瘤、讓厚度變動之情事。因此,固相擴散接合最好的溫度範圍係被設定在上述的範圍。 When the temperature at the time of solid phase diffusion bonding is 600 ° C or more, diffusion of aluminum atoms, titanium atoms, and copper atoms can be promoted, and solid phase diffusion can be sufficiently sufficiently performed in a short time. Further, in the case of 643 ° C or less, it is possible to suppress the occurrence of liquid phase caused by the melting of aluminum and cause a tumor at the joint interface to change the thickness. Therefore, the optimum temperature range of the solid phase diffusion bonding is set in the above range.

此外,在進行固相擴散接合時,被接合的面有傷之場合下,會有在固相擴散接合時產生間隙之場合,本實施型態方面,因為鋁板523A、銅板523B、及鈦箔525被接合的面,係在事先將該面的傷除去、平滑化之後,被固相擴散接合,所以,可以抑制在各個接合界面產生間隙而加以接合。 Further, when the bonded surface is damaged during the solid phase diffusion bonding, a gap may be generated during the solid phase diffusion bonding. In the present embodiment, the aluminum plate 523A, the copper plate 523B, and the titanium foil 525 are used. Since the surface to be joined is removed and smoothed beforehand, the surface is diffusion-bonded by solid phase. Therefore, it is possible to suppress the occurrence of a gap at each joint interface and to join.

以上,說明了本發明之實施型態,但本發明並不以此為限,在不逸脫其發明之技術思想的範圍可以進行適當的變更。 The embodiments of the present invention have been described above, but the present invention is not limited thereto, and may be appropriately modified without departing from the scope of the invention.

上述實施型態中,針對鋁層、與銅層被接合之場合加以說明,但,也可以取代銅層、而接合由鎳或鎳合金所構成的鎳層、或者由銀或銀合金所構成之銀層。 In the above embodiment, the aluminum layer and the copper layer are bonded to each other. However, instead of the copper layer, a nickel layer made of nickel or a nickel alloy or a silver or a silver alloy may be bonded. Silver layer.

例如,在取代銅層而形成鎳層之場合下,可焊性變得良好,在介著焊錫材接合金屬層與散熱片時,能 夠提升接合可信賴性。再者,在利用固相擴散接合來形成鎳層之場合下,並不需要在以無電解電鍍等來形成鎳鍍膜時所進行的遮罩處理,因而,能夠減低製造成本。此場合下,鎳層之厚度最好是設在1μm以上30μm以下。鎳層的厚度未滿1μm之場合下係有喪失提升與半導體元件之接合可信賴性的效果之疑慮,超過30μm之場合下則有讓鎳層成為熱電阻體、喪失能夠有效率地將熱傳達到散熱片側之疑慮。 For example, when a nickel layer is formed instead of the copper layer, the solderability is improved, and when the solder material is bonded to the metal layer and the heat sink, Increase joint reliability. Further, in the case where the nickel layer is formed by solid phase diffusion bonding, the masking treatment performed when the nickel plating film is formed by electroless plating or the like is not required, and thus the manufacturing cost can be reduced. In this case, the thickness of the nickel layer is preferably set to be 1 μm or more and 30 μm or less. When the thickness of the nickel layer is less than 1 μm, there is a concern that the effect of improving the reliability of bonding to the semiconductor element is lost. When the thickness exceeds 30 μm, the nickel layer is made into a thermal resistor, and the heat can be efficiently transferred. Do not worry about the heat sink side.

此外,利用固相擴散接合來形成鎳層之場合下,固相擴散接合,係能夠在與前述第一實施型態形成銅層之場合同樣的條件下加以形成。 Further, in the case where a nickel layer is formed by solid phase diffusion bonding, solid phase diffusion bonding can be formed under the same conditions as in the case of forming a copper layer in the first embodiment.

此外,在取代銅層而形成銀層之場合下,在採用包含例如氧化銀粒子與由有機物所構成的還原劑之氧化銀膏來接合散熱片時,由於使氧化銀被還原之銀與銀層成為同種的金屬與金屬的接合,所以能夠使接合可信賴性提升。此場合下,銀層之厚度最好是設在1μm以上20μm以下。在銀層的厚度未滿1μm之場合下會有喪失提升與半導體元件之接合可信賴性效果之疑慮;在超過20μm之場合下則看不見接合可信賴性提升的效果,且招來成本的增加。 Further, in the case where a silver layer is formed instead of the copper layer, when the heat sink is bonded by using a silver oxide paste containing, for example, silver oxide particles and a reducing agent composed of an organic substance, silver and silver layers which are reduced by silver oxide are used. Since the metal and metal of the same kind are joined, the reliability of the joint can be improved. In this case, the thickness of the silver layer is preferably set to be 1 μm or more and 20 μm or less. When the thickness of the silver layer is less than 1 μm, there is a fear that the effect of improving the reliability of bonding with the semiconductor element is lost. When the thickness exceeds 20 μm, the effect of improving the reliability of the joint is not observed, and the cost is increased. .

此外,利用固相擴散接合來形成銀層之場合下,固相擴散接合,係能夠在與前述第一實施型態形成銅層之場合同樣的條件下加以形成。 Further, in the case where a silver layer is formed by solid phase diffusion bonding, solid phase diffusion bonding can be formed under the same conditions as in the case of forming a copper layer in the first embodiment.

以外,如圖18(第六實施型態)所示,電路 層612也可以做成具有:在陶瓷基板511的第一面(圖18之上面)被形成之鋁層612A,與在鋁層612A一方的面(圖18之上面)、介著鈦層615被固相擴散接合之銅層612B之構成。 In addition, as shown in FIG. 18 (sixth embodiment), the circuit The layer 612 may also be formed with an aluminum layer 612A formed on the first surface (upper surface of FIG. 18) of the ceramic substrate 511, and a surface (on the upper side of FIG. 18) on the aluminum layer 612A, and a titanium layer 615 interposed therebetween. The solid phase diffusion bonded copper layer 612B is constructed.

具備此電路層612之附散熱片之電源模組601,在負荷熱循環時,能夠抑制利用鋁層612A吸收陶瓷基板511所產生之熱應力、使陶瓷基板511發生破裂。此外,在鋁層612A的上側被形成銅層612B,因而,能夠有效率地將來自半導體元件3側的熱散開並在散熱片531側放散。 The power module 601 having the heat sink attached to the circuit layer 612 can suppress the thermal stress generated by the aluminum substrate 612A from absorbing the ceramic substrate 511 and cause the ceramic substrate 511 to be broken during load thermal cycling. Further, since the copper layer 612B is formed on the upper side of the aluminum layer 612A, the heat from the side of the semiconductor element 3 can be efficiently dissipated and released on the side of the heat sink 531.

又,上述實施型態,係說明了介著鈦箔,將由2N鋁所構成的鋁板與由無氧銅所構成的銅板加以層積、固相擴散接合之場合,而在將由矽的含有量比2N鋁還少的4N鋁所構成的鋁板與銅板介著鈦箔加以固相擴散接合之場合下,在接合界面並不形成在Al3Ti讓矽固溶之鋁-鈦-矽層,而是讓Al3Ti層(鋁-鈦層)長厚。在接合由4N鋁所構成的鋁板與銅板之場合下,如例如圖10(第四實施型態)及圖19(第七實施型態)所示,藉由將由4N鋁所構成的鋁板422A(723A)、鋁-矽系焊材箔426(726)、鈦箔425(725)、銅板422B(723B)依序層積、固相擴散接合,能夠與電源模組用基板10(510)同樣地形成第一鋁-鈦-矽層及第二鋁-鈦-矽層,可以在負荷熱循環時抑制電路層或金屬層發生龜裂之情事。 Further, in the above-described embodiment, a case where a titanium plate made of 2N aluminum and a copper plate made of oxygen-free copper are laminated and solid-phase diffusion bonded are interposed by a titanium foil. In the case where the aluminum plate composed of 4N aluminum and 2N aluminum is solid-phase diffusion bonded through the titanium foil, the aluminum-titanium-bismuth layer in which Al 3 Ti is dissolved in the solid solution is not formed at the joint interface. The Al 3 Ti layer (aluminum-titanium layer) is made thick. In the case of joining an aluminum plate and a copper plate composed of 4N aluminum, as shown, for example, in FIG. 10 (fourth embodiment) and FIG. 19 (seventh embodiment), an aluminum plate 422A composed of 4N aluminum is used ( 723A), the aluminum-lanthanum-based solder material foil 426 (726), the titanium foil 425 (725), and the copper plate 422B (723B) are sequentially laminated and solid-phase diffusion bonded, and can be similar to the power module substrate 10 (510). Forming the first aluminum-titanium-ruthenium layer and the second aluminum-titanium-ruthenium layer can suppress cracking of the circuit layer or the metal layer during thermal cycling of the load.

此外,上述實施型態係說明了介著焊錫材接 合金屬層與散熱片之場合,但並不受限於此,也可以利用其他手法來接合。例如,可以利用上述的氧化銀膏來接合,或利用焊材箔來接合。 In addition, the above embodiment describes the connection of solder material. In the case where the metal layer and the heat sink are combined, the present invention is not limited thereto, and other methods may be used for bonding. For example, it may be joined by the above-described silver oxide paste or by a solder foil.

此外,在上述實施型態說明了電路層由鋁或鋁合金所構成之場合,但並非受限於此,也可以銅或銅合金來構成。此外,電路層也可以被做成由銅或銅合金所構成的引線框架之一部份。 Further, in the above embodiment, the case where the circuit layer is composed of aluminum or an aluminum alloy has been described, but the present invention is not limited thereto, and may be formed of copper or a copper alloy. In addition, the circuit layer can also be formed as part of a lead frame made of copper or a copper alloy.

此外,說明了散熱片由銅或銅合金所構成之場合,但並非受限於此,散熱片也可以由鋁或鋁合金來構成。 Further, although the case where the heat sink is composed of copper or a copper alloy has been described, the present invention is not limited thereto, and the heat sink may be made of aluminum or an aluminum alloy.

此外,上述實施型態說明了在陶瓷基板的第一面及第二面、介著鋁-矽系的焊材箔來接合鋁板之場合,但並不受限於此,也可以適用過渡液相接合法(Transient Liquid Phase Bonding)。 Further, in the above embodiment, the case where the aluminum plate is joined to the first surface and the second surface of the ceramic substrate via the aluminum-lanthanum-based solder material foil is described. However, the present invention is not limited thereto, and a transition liquid phase may be applied. Transient Liquid Phase Bonding.

再者,上述實施型態,係藉由在陶瓷基板的第一面或第二面、介著鋁-矽系焊材箔來層積成為鋁層的鋁板,再在其上介著鈦箔層積成為銅層之銅板,進行加壓加熱而形成接合體(或金屬層),但是,可以取代鈦箔及銅板而採用由鈦/銅所構成的包層金屬(clad metal)。此外,也可以取代鋁板、鈦箔及銅板,而採用由鋁/鈦/銅等3層所構成之包層金屬。 Further, in the above embodiment, an aluminum plate which is an aluminum layer is laminated on the first surface or the second surface of the ceramic substrate via an aluminum-lanthanum-based solder material foil, and a titanium foil layer is interposed thereon. A copper plate which is a copper layer is formed by heating under pressure to form a bonded body (or a metal layer). However, instead of a titanium foil or a copper plate, a clad metal made of titanium/copper may be used. Further, instead of the aluminum plate, the titanium foil, and the copper plate, a clad metal composed of three layers of aluminum/titanium/copper may be used.

此外,在取代銅層而形成鎳層之場合下,可以採用由鈦/鎳所構成的包層金屬或由鋁/鈦/鎳所構成的包層金屬。 Further, in the case where a nickel layer is formed instead of the copper layer, a clad metal composed of titanium/nickel or a clad metal composed of aluminum/titanium/nickel may be used.

再者,在取代銅層而形成銀層之場合下,可以採用由鈦/銀所構成的包層金屬或由鋁/鈦/銀所構成的包層金屬。 Further, in the case where a copper layer is formed instead of the copper layer, a clad metal composed of titanium/silver or a clad metal composed of aluminum/titanium/silver may be used.

〔實施例〕 [Examples] (實施例1) (Example 1)

以下,說明應該確認本發明的效果所進行之確認實驗之結果。 Hereinafter, the results of the confirmation experiment performed by confirming the effects of the present invention will be described.

作為本發明例1-1~1-7之接合體,如表1所示,在由含有0.25質量%矽的2N鋁板所構成之鋁構件(10mm×10mm、厚度0.6mm)一方的面,介著鈦箔層積由表1記載的金屬構件所構成的板(2mm×2mm、厚度0.3mm),利用上述實施型態記載之方法於表1所示之條件下進行固相擴散接合。 As a joined body of Inventive Examples 1-1 to 1-7, as shown in Table 1, the surface of an aluminum member (10 mm × 10 mm, thickness 0.6 mm) composed of a 2N aluminum plate containing 0.25 mass% of niobium was introduced. A plate (2 mm × 2 mm, thickness: 0.3 mm) composed of the metal members described in Table 1 was laminated with a titanium foil, and solid phase diffusion bonding was carried out under the conditions shown in Table 1 by the method described in the above embodiment.

此外,作為比較例1-1之接合體,在由純度99.99%以上的鋁板所構成的鋁構件(10mm×10mm、厚度0.6mm)一方的面,介著鈦箔層積由無氧銅的板所構成的金屬構件(2mm×2mm、厚度0.3mm),與本發明例1-1的接合體同樣作法於表1所示之條件下進行固相擴散接合。 Further, as a bonded body of Comparative Example 1-1, a surface of an aluminum member (10 mm × 10 mm, thickness: 0.6 mm) composed of an aluminum plate having a purity of 99.99% or more was laminated with an oxygen-free copper plate via a titanium foil. The metal member (2 mm × 2 mm, thickness: 0.3 mm) to be formed was subjected to solid phase diffusion bonding under the conditions shown in Table 1 in the same manner as in the bonded body of Example 1-1 of the present invention.

對以這作法所得到之接合體,實施接合體之剖面觀察、及剪力試驗(shear test)。 For the joined body obtained by this method, a cross-sectional observation of the joined body and a shear test were performed.

(剖面觀察) (section observation)

在將接合體的剖面、採用離子束剖面研磨(Cross section polisher,日本電子股份有限公司製SM-09010)、 於離子加速電壓:5kV、加工時間:14小時、來自遮蔽板之突出量:100μm下進行離子蝕刻之後,採用掃瞄型電子顯微鏡(SEM)來進行觀察鋁層(鋁構件)與金屬構件層(金屬構件)之接合部。此外,採用EPMA分析裝置進行接合部的組成分析,確認在鈦層與鋁層之間的接合界面(在圖11、12,鈦層與鋁構件之間的界面),是不是形成在Al3Ti讓矽固溶之鋁-鈦-矽層。 The cross section of the bonded body was polished by ion beam section (Cross section polisher, SM-09010, manufactured by JEOL Ltd.), ion acceleration voltage: 5 kV, processing time: 14 hours, and protrusion amount from the shielding plate: 100 μm. After the ion etching, the bonding portion between the aluminum layer (aluminum member) and the metal member layer (metal member) was observed by a scanning electron microscope (SEM). Further, the composition analysis of the joint portion was carried out by using an EPMA analyzer, and it was confirmed whether the joint interface between the titanium layer and the aluminum layer (the interface between the titanium layer and the aluminum member in FIGS. 11 and 12) was formed in Al 3 Ti. Let the bismuth dissolve in the aluminum-titanium-bismuth layer.

(剪力試驗) (shear test)

對接合體實施剪力試驗,測定抗剪強度(剪斷強度)。又,剪力試驗係依據國際電氣標準會議之規格IEC 60749-19來實施。 A shear test was performed on the joined body to measure the shear strength (shear strength). Also, the shear test is carried out in accordance with the specifications of the International Electrical Standards Conference IEC 60749-19.

作為剖面觀察結果之一例,將本發明例1-1之剖面觀察結果(SEM像)顯示在圖11、將比較例1-1之剖面觀察結果(SEM像)顯示在圖12。此外,表1顯示鋁-鈦-矽層之有無、接合體剪力試驗之測定結果。 As a result of the cross-sectional observation, the cross-sectional observation result (SEM image) of Example 1-1 of the present invention is shown in Fig. 11 and the cross-sectional observation result (SEM image) of Comparative Example 1-1 is shown in Fig. 12. In addition, Table 1 shows the results of the measurement of the joint shear test by the presence or absence of the aluminum-titanium-tantalum layer.

依照上述方法將能夠確認鋁-鈦-矽層者於表中記為「有」,無法確認者記載為「無」。 According to the above method, it can be confirmed that the aluminum-titanium-tantalum layer is marked as "yes" in the table, and those who cannot be confirmed are described as "none".

本發明例1-1,如圖11所示,在鈦層與鋁層(鋁構件)之間被確認為鋁-鈦-矽層。確認此鋁-鈦-矽層之厚度被薄薄地形成。也確認此類之鋁-鈦-矽層也被形成在本發明例1-2~1-7。 Inventive Example 1-1, as shown in Fig. 11, was confirmed to be an aluminum-titanium-tantalum layer between the titanium layer and the aluminum layer (aluminum member). It was confirmed that the thickness of this aluminum-titanium-tantalum layer was formed thin. It was also confirmed that such an aluminum-titanium-ruthenium layer was also formed in the inventive examples 1-2 to 1-7.

另一方面,比較例1-1係在鈦層與鋁層之間被形成鋁-鈦層,未被確認為鋁-鈦-矽層。如圖12所示,比較例1-1之鋁-鈦層的厚度相較於本發明例1-1~1-7之鋁-鈦-矽層,是被厚厚地形成,且在其接合界面被觀察到龜裂。 On the other hand, in Comparative Example 1-1, an aluminum-titanium layer was formed between the titanium layer and the aluminum layer, and it was not confirmed to be an aluminum-titanium-tantalum layer. As shown in FIG. 12, the thickness of the aluminum-titanium layer of Comparative Example 1-1 was thicker than that of the aluminum-titanium-ruthenium layer of Examples 1-1 to 1-7 of the present invention, and at the joint interface thereof. Cracks were observed.

此外,確認未被確認有鋁-鈦-矽層之比較例1-1方面,抗剪強度為28MPa,相對於此,被確認有鋁-鈦-矽層之本發明例1-1~1-7之抗剪強度則大幅地高、為79MPa以上。 Further, in the case of Comparative Example 1-1 in which the aluminum-titanium-iridium layer was not confirmed, the shear strength was 28 MPa, whereas the inventive example 1-1~1- of the aluminum-titanium-iridium layer was confirmed. The shear strength of 7 is substantially high and is 79 MPa or more.

(實施例2) (Example 2)

以以下方式製造本發明例2-1~2-7之電源模組。在陶瓷基板一方之面,層積成為鋁層之含有0.25質量%矽之2N鋁板(厚度0.6mm),再在其上介著鈦箔層積由表2記載的金屬構件所構成之板。此外,在陶瓷基板的第二面,層積成為金屬層之純度99.99%以上之4N鋁板(厚度0.6mm)。此處,在鋁板與陶瓷基板之間,介著鋁-矽系焊材箔而層積。其次,於表2所示條件下進行加熱處理,在陶瓷基板的第一面及第二面形成鋁層及金屬層,而且,將鋁層、鈦箔、由金屬構件所構成的板予以固相擴散接合後形成電路層。接著,在電路層一方之面介著焊錫材接合半 導體元件。 The power modules of the inventive examples 2-1 to 2-7 were manufactured in the following manner. On the surface of one side of the ceramic substrate, a 2N aluminum plate (thickness: 0.6 mm) containing 0.25 mass% of yttrium was laminated, and a plate made of the metal member shown in Table 2 was laminated thereon with a titanium foil. Further, on the second surface of the ceramic substrate, a 4N aluminum plate (thickness: 0.6 mm) having a purity of 99.99% or more of the metal layer was laminated. Here, an aluminum-lanthanum-based solder material foil is laminated between the aluminum plate and the ceramic substrate. Next, heat treatment was performed under the conditions shown in Table 2, and an aluminum layer and a metal layer were formed on the first surface and the second surface of the ceramic substrate, and the aluminum layer, the titanium foil, and the plate made of the metal member were solid-phased. A circuit layer is formed after diffusion bonding. Next, on the side of the circuit layer, the solder joint is half Conductor element.

比較例2-1之電源模組,係採用純度99.99%以上之4N鋁作為鋁層,除此之外,則與本發明例2-1之電源模組同樣地進行製造。 The power module of Comparative Example 2-1 was produced in the same manner as the power module of the inventive example 2-1 except that 4N aluminum having a purity of 99.99% or more was used as the aluminum layer.

又,加熱處理係於表2所示條件下實施。 Further, the heat treatment was carried out under the conditions shown in Table 2.

在以此方式被製造之電源模組的電路層之鋁層與金屬構件層的接合部,係與實施例1同樣地,確認鋁-矽-鈦層之有無。依照與實施例1同樣的方法將能夠確認鋁-鈦-矽層者於表中記為「有」,無法確認者記載為「無」。再者,對於電源模組,進行熱循環試驗,測定試驗後的鋁層與金屬構件層之接合部的接合率。此外,也測定鋁層與金屬構件層之接合部的初期的接合率(熱循環試驗前的接合率)。熱循環試驗與接合率的測定,係如下述方式進行。 In the joint portion between the aluminum layer and the metal member layer of the circuit layer of the power module manufactured in this manner, the presence or absence of the aluminum-niobium-titanium layer was confirmed in the same manner as in the first embodiment. In the same manner as in the first embodiment, those who can confirm the aluminum-titanium-tantalum layer are referred to as "present" in the table, and those who cannot be confirmed are described as "none". Further, a thermal cycle test was performed on the power module, and the bonding ratio of the joint portion between the aluminum layer and the metal member layer after the test was measured. Further, the initial bonding ratio (joining ratio before the heat cycle test) of the joint portion between the aluminum layer and the metal member layer was also measured. The heat cycle test and the measurement of the bonding rate were carried out as follows.

(熱循環試驗) (thermal cycle test)

熱循環試驗,係對於電源模組,藉由負荷反覆-40℃與125℃之熱循環而進行。本實施例係實施此熱循環4000回。 The thermal cycle test is performed on the power module by a thermal cycle of -40 ° C and 125 ° C over the load. This embodiment implements this thermal cycle 4000 times.

測定此熱循環試驗前後之、鋁層與金屬構件層之界面之接合率。 The bonding ratio of the interface between the aluminum layer and the metal member layer before and after the heat cycle test was measured.

(鋁層與金屬構件層之接合部之接合率評價) (Evaluation of the bonding ratio of the joint portion between the aluminum layer and the metal member layer)

對於熱循環試驗前後的電源模組,針對鋁層與金屬構件層之接合部之接合率,採用超音波探傷裝置進行評價、 由以下數式算出。此處,初期接合面積,係設為接合前應該接合的面積,亦即鋁層的面積。由於在超音波探傷像之剝離係以白色部顯示,所以將此白色部的面積作為剝離面積。 For the power module before and after the thermal cycle test, the bonding rate of the joint portion between the aluminum layer and the metal member layer is evaluated by using an ultrasonic flaw detector. It is calculated by the following formula. Here, the initial joint area is an area to be joined before joining, that is, an area of the aluminum layer. Since the peeling of the ultrasonic flaw detection image is shown in the white portion, the area of the white portion is taken as the peeling area.

(接合率(%))={(初期接合面積)-(剝離面積)}/(初期接合面積)×100 (bonding ratio (%)) = {(initial joint area) - (peeling area)} / (initial joint area) × 100

以上的評估結果顯示於表2。 The above evaluation results are shown in Table 2.

未被確認有鋁-鈦-矽層之比較例2-1方面,初期接合率低到72.5%,在熱循環試驗後之接合率係大幅降低。 In the case of Comparative Example 2-1 in which the aluminum-titanium-tantalum layer was not confirmed, the initial bonding ratio was as low as 72.5%, and the bonding ratio after the heat cycle test was greatly lowered.

另一方面,被確認有鋁-鈦-矽層之本發明例2-1~2-7方面,初期接合率高到97.8%以上,熱循環試驗後的接合率也一直較高,被確認是接合可信賴性高的電源模組。 On the other hand, in the case of the inventive examples 2-1 to 2-7 in which the aluminum-titanium-iridium layer was confirmed, the initial bonding ratio was as high as 97.8% or more, and the bonding ratio after the heat cycle test was also always high, and it was confirmed that Join a power module with high reliability.

(實施例3) (Example 3)

以下,說明應該確認本發明的效果所進行之確認實驗之結果。 Hereinafter, the results of the confirmation experiment performed by confirming the effects of the present invention will be described.

以以下方式製造本發明例3-1~3-5之附散熱片之電源模組。首先,在表3所示之陶瓷基板一方之面,層積成為電路層之純度99%以上的鋁(2N-鋁)板。此外,在陶瓷基板之第二面,層積成為鋁層之純度99%以上的鋁板(含有0.25質量%矽),再介著鈦箔層積無氧銅之銅板。此處,在鋁板與陶瓷基板之間,係介著鋁-矽系焊材箔而層積。其次,於表3所示條件下進行加熱處理,在陶瓷基板的第一面及第二面形成電路層及鋁層,而且,將鋁層、鈦箔、銅板予以固相擴散接合後形成金屬層。接著,將電源模組用基板的金屬層與表3所示散熱片用錫-銻系焊錫材予以接合。此外,在電路層一方之面介著錫-銻系焊錫材來接合半導體元件。 The power module with the heat sink attached to the inventive examples 3-1 to 3-5 was fabricated in the following manner. First, on the side of the ceramic substrate shown in Table 3, an aluminum (2N-aluminum) plate having a purity of the circuit layer of 99% or more was laminated. Further, on the second surface of the ceramic substrate, an aluminum plate (containing 0.25 mass% of yttrium) having an aluminum layer purity of 99% or more was laminated, and a copper plate of oxygen-free copper was laminated on the titanium foil. Here, an aluminum-lanthanum-based solder material foil is laminated between the aluminum plate and the ceramic substrate. Next, heat treatment was performed under the conditions shown in Table 3, and a circuit layer and an aluminum layer were formed on the first surface and the second surface of the ceramic substrate, and the aluminum layer, the titanium foil, and the copper plate were subjected to solid phase diffusion bonding to form a metal layer. . Next, the metal layer of the power module substrate and the heat sink shown in Table 3 were joined by a tin-bismuth solder material. Further, a semiconductor element is bonded to the surface of the circuit layer via a tin-bismuth solder material.

其次,說明本發明例3-6~3-8之附散熱片之電源模組之製造方法。在陶瓷基板一方之面,層積成為鋁 層之含有0.25質量%矽之2N鋁板,再在其上介著鈦箔層積表3記載的構成金屬構件層之金屬板。此外,在陶瓷基板之第二面,層積成為鋁層之純度99%以上的鋁板(含有0.25質量%矽),再介著鈦箔層積表3記載之構成金屬構件層之金屬板。此處,在鋁板與陶瓷基板之間,係介著鋁-矽系焊材箔而層積。其次,於表3所示條件下進行加熱處理,在陶瓷基板的第一面及第二面形成鋁層,而且,將鋁層、鈦箔、由金屬構件所構成的板予以固相擴散接合後形成電路層及金屬層。 Next, a method of manufacturing the power module with the heat sink attached to the example 3-6 to 3-8 of the present invention will be described. Laminated on aluminum on one side of the ceramic substrate A 2N aluminum plate containing 0.25 mass% of niobium was placed on the layer, and a metal plate constituting the metal member layer described in Table 3 was laminated thereon by a titanium foil. Further, on the second surface of the ceramic substrate, an aluminum plate (containing 0.25 mass% of yttrium) having an aluminum layer purity of 99% or more was laminated, and a metal plate constituting the metal member layer described in Table 3 was laminated on the titanium foil. Here, an aluminum-lanthanum-based solder material foil is laminated between the aluminum plate and the ceramic substrate. Next, heat treatment was performed under the conditions shown in Table 3, and an aluminum layer was formed on the first surface and the second surface of the ceramic substrate, and the aluminum layer, the titanium foil, and the plate made of the metal member were subjected to solid phase diffusion bonding. A circuit layer and a metal layer are formed.

接著,將電源模組用基板的金屬層與表3所示散熱片用錫-銻系焊錫材予以接合。此外,在電路層一方之面介著錫-銻系焊錫材來接合半導體元件。 Next, the metal layer of the power module substrate and the heat sink shown in Table 3 were joined by a tin-bismuth solder material. Further, a semiconductor element is bonded to the surface of the circuit layer via a tin-bismuth solder material.

比較例1之附散熱片之電源模組,係採用純度99.99%以上之鋁(4N鋁)作為鋁層,除此之外,則與本發明例3-1之附散熱片之電源模組同樣地進行製造。又,加熱處理係於表3所示條件下實施。 The power module with a heat sink of Comparative Example 1 is made of aluminum (4N aluminum) having a purity of 99.99% or more as an aluminum layer, and is the same as the power module of the heat sink with a heat sink of Example 3-1 of the present invention. Manufacturing. Further, the heat treatment was carried out under the conditions shown in Table 3.

在以此方式被製造的附散熱片之電源模組之金屬層之鋁層與金屬構件層的接合部,進行剖面觀察,確認鋁-鈦-矽層之有無。 The joint portion between the aluminum layer and the metal member layer of the metal layer of the heat sink with the heat sink manufactured in this manner was cross-sectionally observed to confirm the presence or absence of the aluminum-titanium-tantalum layer.

此外,對於附散熱片之電源模組,進行冷熱循環試驗(熱循環試驗),評價試驗後之陶瓷基板與金屬層之接合率。 In addition, a thermal cycle test (thermal cycle test) was performed on the power module with the heat sink, and the bonding ratio between the ceramic substrate and the metal layer after the test was evaluated.

剖面觀察、冷熱循環試驗(熱循環試驗)及接合率之評價,係如實施例1及實施例2所記載。只是,熱循環之 回數為3000回,接合率之評價係對冷熱循環試驗(熱循環試驗)後之附散熱片之電源模組進行,評價鋁層與金屬構件層之接合部之接合率。 The cross-sectional observation, the thermal cycle test (thermal cycle test), and the evaluation of the bonding ratio are as described in Example 1 and Example 2. Just, thermal cycling The number of rounds was 3,000. The evaluation of the bonding rate was performed on the power module with the heat sink attached to the thermal cycle test (thermal cycle test), and the bonding ratio between the joint portion of the aluminum layer and the metal member layer was evaluated.

以上的評估結果顯示於表3。 The above evaluation results are shown in Table 3.

被確認有鋁-鈦-矽層之本發明例3-1~3-8方面,冷熱循環試驗後之接合率高到94.4%以上,被確認為接合可信賴性高的電源模組。 In the case of the inventive examples 3-1 to 3-8 in which the aluminum-titanium-tantalum layer was confirmed, the bonding ratio after the hot and cold cycle test was as high as 94.4% or more, and it was confirmed that the power supply module having high joint reliability was confirmed.

另一方面,被確認無鋁-鈦-矽層之比較例3-1方面,熱循環試驗後之接合率相較於本發明例,則是大幅地降低。 On the other hand, in the case of Comparative Example 3-1 in which the aluminum-titanium-iridium layer was confirmed to be absent, the bonding ratio after the heat cycle test was drastically lowered as compared with the example of the present invention.

〔產業上利用可能性〕 [Industrial use possibility]

根據本發明,讓鋁構件(鋁層)、與由銅、鎳、銀任一種所構成的金屬構件(金屬構件層)可良好地被接合,在負荷熱循環時能夠抑制接合部龜裂的發生,能夠提供接合可信賴性良好之接合體、電源模組用基板及附散熱片之電源模組用基板。 According to the present invention, the aluminum member (aluminum layer) and the metal member (metal member layer) composed of any one of copper, nickel, and silver can be favorably joined, and the occurrence of joint cracking can be suppressed during load heat circulation. It is possible to provide a bonded body having a good reliability, a substrate for a power module, and a substrate for a power module with a heat sink.

1‧‧‧電源模組1‧‧‧Power Module

2‧‧‧焊錫層2‧‧‧ solder layer

3‧‧‧半導體元件3‧‧‧Semiconductor components

10‧‧‧電源模組用基板10‧‧‧Power Module Substrate

11‧‧‧陶瓷基板(絕緣層) 11‧‧‧Ceramic substrate (insulation layer)

12‧‧‧電路層(接合體) 12‧‧‧Circuit layer (joined body)

12A‧‧‧鋁(Al)層12A‧‧‧Aluminum (Al) layer

12B‧‧‧銅(Cu)層(金屬構件層) 12B‧‧‧ copper (Cu) layer (metal component layer)

13‧‧‧金屬層13‧‧‧metal layer

15‧‧‧鈦(Ti)層15‧‧‧Titanium (Ti) layer

Claims (24)

  1. 一種接合體,係由鋁(aluminium)所構成之鋁構件、與由銅、或銀所構成之金屬構件接合起來之接合體,其特徵為:在前述鋁構件與前述金屬構件之接合部形成:位於前述金屬構件側之鈦(Ti)層,與位於前述鈦層和前述鋁構件之間、在Al3Ti讓矽(Si)固溶之鋁-鈦-矽層;前述鋁-鈦-矽層係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁構件側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A joint body is an aluminum member made of aluminum and joined to a metal member made of copper or silver, and is characterized in that: a joint portion between the aluminum member and the metal member is formed: a titanium (Ti) layer on the side of the metal member, and an aluminum-titanium-ruthenium layer between the titanium layer and the aluminum member and solid-solubilized in Al 3 Ti (Si); the aluminum-titanium-antimony layer The first aluminum-titanium-ruthenium layer formed on the side of the titanium layer and the second aluminum-titanium layer formed on the side of the aluminum member and having a lower germanium concentration than the first aluminum-titanium-tantalum layer矽 layer.
  2. 如申請專利範圍第1項記載之接合體,其中前述第二鋁-鈦-矽層所包含之矽濃度為1at%以上。 The joined body according to claim 1, wherein the second aluminum-titanium-tantalum layer has a niobium concentration of 1 at% or more.
  3. 一種電源模組用基板,其特徵係具備絕緣層、與被形成在前述絕緣層一方的面之電路層;前述電路層是由申請專利範圍第1項或第2項記載之接合體所構成;前述電路層係具有:被形成在前述絕緣層一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層一方的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部,形成:位於前述金屬構件層側之鈦層,與 位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A substrate for a power module, comprising: an insulating layer; and a circuit layer formed on a surface of the insulating layer; wherein the circuit layer is formed by the bonded body described in claim 1 or 2; The circuit layer includes a surface formed on one surface of the insulating layer, an aluminum layer composed of the aluminum member, and a metal member layer formed of the metal member on a surface of the aluminum layer; a joint portion of the aluminum layer and the metal member layer, forming a titanium layer on the side of the metal member layer, and an aluminum-titanium-ruthenium layer between the titanium layer and the aluminum layer and solid-solving in Al 3 Ti The aluminum-titanium-tantalum layer includes a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and a side of the aluminum layer formed on the side of the aluminum layer, and having a germanium concentration higher than that of the first aluminum-titanium-germanium layer The second aluminum-titanium-bismuth layer is also low.
  4. 如申請專利範圍第3項記載之電源模組用基板,其中具備在前述絕緣層另一方的面被形成之金屬層;前述金屬層是由申請專利範圍第1項或第2項記載之接合體所構成;前述金屬層,係具有:被形成在前述絕緣層另一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層之中、和前述絕緣層被形成的面相反側的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部,形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 The substrate for a power module according to claim 3, further comprising a metal layer formed on the other surface of the insulating layer; wherein the metal layer is the bonded body according to the first or second aspect of the patent application. The metal layer has an aluminum layer formed of the aluminum member formed on the other surface of the insulating layer, and is formed in the aluminum layer opposite to the surface on which the insulating layer is formed. a side surface, a metal member layer composed of the metal member; a joint portion between the aluminum layer and the metal member layer: a titanium layer on the side of the metal member layer, and a titanium layer and the aluminum layer An aluminum-titanium-ruthenium layer which is solid-solved in Al 3 Ti; the aluminum-titanium-ruthenium layer has a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and is formed in The second aluminum-titanium-ruthenium layer having a lower aluminum layer side and a lower germanium concentration than the first aluminum-titanium-tantalum layer.
  5. 一種電源模組用基板,具備絕緣層,被形成在該 絕緣層一方的面之電路層,與被形成在前述絕緣層另一方的面之金屬層之電源模組用基板,其特徵係前述金屬層係由申請專利範圍第1項或第2項記載之接合體所構成;在由前述鋁構件所構成之鋁層與由前述金屬構件所構成金屬構件層之接合部,形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A power supply module substrate comprising an insulating layer, a circuit layer formed on one surface of the insulating layer, and a power module substrate formed on a metal layer on the other surface of the insulating layer, characterized in that the metal is The layer is composed of the joined body described in the first or second aspect of the patent application; the joint portion of the aluminum layer composed of the aluminum member and the metal member layer composed of the metal member is formed: the metal member is located a titanium layer on the layer side, and an aluminum-titanium-ruthenium layer which is solid-dissolved in the Al 3 Ti between the titanium layer and the aluminum layer; and the aluminum-titanium-ruthenium layer is formed on the titanium a first aluminum-titanium-ruthenium layer on the layer side, and a second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer and having a lower germanium concentration than the first aluminum-titanium-ruthenium layer.
  6. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第3項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, comprising: a substrate for a power module according to claim 3; and a heat sink bonded to the metal layer.
  7. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第4項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, comprising: a substrate for a power module according to claim 4; and a heat sink bonded to the metal layer.
  8. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第5項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, characterized in that: the substrate for a power module described in claim 5, and the former A heat sink in which the metal layer is bonded.
  9. 如申請專利範圍第6項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 The substrate for a power module with a heat sink according to claim 6, wherein the metal layer and the heat sink are bonded to each other via a solder layer.
  10. 如申請專利範圍第7項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 The substrate for a power module with a heat sink according to the seventh aspect of the invention, wherein the metal layer and the heat sink are bonded to each other via a solder layer.
  11. 如申請專利範圍第8項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 The substrate for a power module with a heat sink according to the eighth aspect of the invention, wherein the metal layer and the heat sink are bonded to each other via a solder layer.
  12. 一種附散熱片之電源模組用基板,其特徵係具備:絕緣層,被形成在該絕緣層一方的面之電路層,被形成在前述絕緣層另一方的面之金屬層,與被接合在該金屬層之散熱片;前述金屬層與前述散熱片是由申請專利範圍第1或2項記載之接合體所構成;前述金屬層及前述散熱片的接合面的一方是由鋁所構成;前述金屬層及前述散熱片的接合面的另一方是由銅、或銀所構成;在前述金屬層與前述散熱片之接合部,形成: 位於前述接合面由銅、或銀所構成的前述金屬層或前述散熱片側之鈦層,前述接合面由鋁所構成的前述金屬層或前述散熱片,與位於和前述鈦層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述接合面由鋁所構成的前述金屬層或前述散熱片側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A substrate for a power module with a heat sink, characterized in that: an insulating layer is formed on a circuit layer formed on one surface of the insulating layer, and is formed on a metal layer on the other surface of the insulating layer, and is bonded to a heat sink of the metal layer; the metal layer and the heat sink are formed by the bonded body according to claim 1 or 2; and one of the joint faces of the metal layer and the heat sink is made of aluminum; The other of the joint faces of the metal layer and the heat sink is made of copper or silver; and at the joint portion between the metal layer and the heat sink, the metal layer is made of copper or silver. Or the titanium layer on the heat sink side, the metal layer or the heat sink formed of aluminum, and the aluminum-titanium-ruthenium layer which is disposed between the titanium layer and the Al 3 Ti; The aluminum-titanium-tantalum layer includes: a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and a metal layer or a heat sink side formed on the joint surface made of aluminum; The aforementioned first aluminum-titanium-bismuth The lower second aluminum - titanium - silicon layer.
  13. 一種接合體,係由鋁(aluminium)所構成之鋁構件、與由鎳所構成之金屬構件接合起來之接合體,其特徵為:前述鋁構件與前述金屬構件,介著鈦材被層積,藉由在層積方向加壓加熱前述鋁構件與前述鈦材與前述金屬構件,使前述鋁構件與前述鈦材、前述鈦材與前述金屬構件分別被固相擴散接合,在前述鋁構件與前述金屬構件之接合部形成:位於前述金屬構件側之鈦(Ti)層,與位於前述鈦層和前述鋁構件之間、在Al3Ti讓矽(Si)固溶之鋁-鈦-矽層;前述鋁-鈦-矽層係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁構件側、矽濃度比前述第一鋁-鈦-矽 層還低之第二鋁-鈦-矽層。 A joined body is a joined body of an aluminum member made of aluminum and a metal member made of nickel, wherein the aluminum member and the metal member are laminated via a titanium material. By heating and heating the aluminum member, the titanium material, and the metal member in a stacking direction, the aluminum member and the titanium material, the titanium material, and the metal member are each solid phase diffusion-bonded, and the aluminum member and the aforesaid aluminum member are a joint portion of the metal member is formed of a titanium (Ti) layer on the side of the metal member, and an aluminum-titanium-ruthenium layer between the titanium layer and the aluminum member and solid-solubilized in Al 3 Ti with bismuth (Si); The aluminum-titanium-tantalum layer includes a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and a side of the aluminum member is formed on the side of the aluminum member, and a concentration of germanium is lower than that of the first aluminum-titanium-tantalum layer. The second aluminum-titanium-tantalum layer.
  14. 如申請專利範圍第13項記載之接合體,其中前述第二鋁-鈦-矽層所包含之矽濃度為1at%以上。 The joined body according to claim 13, wherein the second aluminum-titanium-tantalum layer has a niobium concentration of 1 at% or more.
  15. 一種電源模組用基板,其特徵係具備絕緣層、與被形成在前述絕緣層一方的面之電路層;前述電路層是由申請專利範圍第13項或第14項記載之接合體所構成;前述電路層係具有:被形成在前述絕緣層一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層一方的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部,被形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A substrate for a power module, comprising: an insulating layer; and a circuit layer formed on a surface of the insulating layer; wherein the circuit layer is formed by the bonded body described in claim 13 or 14; The circuit layer includes a surface formed on one surface of the insulating layer, an aluminum layer composed of the aluminum member, and a metal member layer formed of the metal member on a surface of the aluminum layer; a joint portion between the aluminum layer and the metal member layer is formed: a titanium layer on the side of the metal member layer, and an aluminum-titanium-ruthium layer which is solid-solved in the Al 3 Ti between the titanium layer and the aluminum layer The aluminum-titanium-tantalum layer includes a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and is formed on the side of the aluminum layer, and has a germanium concentration higher than that of the first aluminum-titanium-bismuth layer The layer is also low in the second aluminum-titanium-tantalum layer.
  16. 如申請專利範圍第15項記載之電源模組用基板,其中具備在前述絕緣層另一方的面被形成之金屬層;前述金屬層是由申請專利範圍第13項或第14項記載之接合體所構成; 前述金屬層,係具有:被形成在前述絕緣層另一方的面、由前述鋁構件所構成之鋁層,與被形成在該鋁層之中、和前述絕緣層被形成的面相反側的面、由前述金屬構件所構成之金屬構件層;在前述鋁層和前述金屬構件層之接合部,形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 The substrate for a power module according to claim 15 which has a metal layer formed on the other surface of the insulating layer, and the metal layer is a bonded body according to claim 13 or 14. The metal layer has an aluminum layer formed of the aluminum member formed on the other surface of the insulating layer, and is formed in the aluminum layer opposite to the surface on which the insulating layer is formed. a side surface, a metal member layer composed of the metal member; a joint portion between the aluminum layer and the metal member layer: a titanium layer on the side of the metal member layer, and a titanium layer and the aluminum layer An aluminum-titanium-ruthenium layer which is solid-solved in Al 3 Ti; the aluminum-titanium-ruthenium layer has a first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and is formed in The second aluminum-titanium-ruthenium layer having a lower aluminum layer side and a lower germanium concentration than the first aluminum-titanium-tantalum layer.
  17. 一種電源模組用基板,具備絕緣層,被形成在該絕緣層一方的面之電路層,與被形成在前述絕緣層另一方的面之金屬層之電源模組用基板,其特徵係前述金屬層係由申請專利範圍第13項或第14項記載之接合體所構成;在由前述鋁構件所構成之鋁層與由前述金屬構件所構成金屬構件層之接合部,形成:位於前述金屬構件層側之鈦層,與位於前述鈦層和前述鋁層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與 被形成在前述鋁層側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A power supply module substrate comprising an insulating layer, a circuit layer formed on one surface of the insulating layer, and a power module substrate formed on a metal layer on the other surface of the insulating layer, characterized in that the metal is The layer is composed of the joined body described in claim 13 or 14; the joint between the aluminum layer composed of the aluminum member and the metal member layer composed of the metal member is formed at the metal member a titanium layer on the layer side, and an aluminum-titanium-ruthenium layer which is solid-dissolved in the Al 3 Ti between the titanium layer and the aluminum layer; and the aluminum-titanium-ruthenium layer is formed on the titanium a first aluminum-titanium-ruthenium layer on the layer side, and a second aluminum-titanium-ruthenium layer formed on the side of the aluminum layer and having a lower germanium concentration than the first aluminum-titanium-ruthenium layer.
  18. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第15項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, comprising: a substrate for a power module according to claim 15; and a heat sink bonded to the metal layer.
  19. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第16項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, comprising: a substrate for a power module according to claim 16; and a heat sink bonded to the metal layer.
  20. 一種附散熱片之電源模組用基板,其特徵係具備:申請專利範圍第17項記載之電源模組用基板、與在前述金屬層被接合之散熱片。 A substrate for a power module with a heat sink, comprising: a substrate for a power module according to claim 17; and a heat sink bonded to the metal layer.
  21. 如申請專利範圍第18項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 The substrate for a power module with a heat sink according to claim 18, wherein the metal layer and the heat sink are bonded to each other via a solder layer.
  22. 如申請專利範圍第19項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 The substrate for a power module with a heat sink according to claim 19, wherein the metal layer and the heat sink are bonded to each other via a solder layer.
  23. 如申請專利範圍第20項記載之附散熱片之電源模組用基板,其中前述金屬層與前述散熱片是介著焊錫層而被接合起來。 A substrate for a power module with a heat sink according to claim 20, wherein The metal layer and the heat sink are joined together via a solder layer.
  24. 一種附散熱片之電源模組用基板,其特徵係具備:絕緣層,被形成在該絕緣層一方的面之電路層,被形成在前述絕緣層另一方的面之金屬層,與被接合在該金屬層之散熱片;前述金屬層與前述散熱片是由申請專利範圍第13或14項記載之接合體所構成;前述金屬層及前述散熱片的接合面的一方是由鋁所構成;前述金屬層及前述散熱片的接合面的另一方是由鎳所構成;在前述金屬層與前述散熱片之接合部,形成:位於前述接合面由鎳所構成的前述金屬層或前述散熱片側之鈦層,前述接合面由鋁所構成的前述金屬層或前述散熱片,與位於和前述鈦層之間、在Al3Ti讓矽固溶之鋁-鈦-矽層;前述鋁-鈦-矽層,係具備:被形成在前述鈦層側之第一鋁-鈦-矽層,與被形成在前述接合面由鋁所構成的前述金屬層或前述散熱片側、矽濃度比前述第一鋁-鈦-矽層還低之第二鋁-鈦-矽層。 A substrate for a power module with a heat sink, characterized in that: an insulating layer is formed on a circuit layer formed on one surface of the insulating layer, and is formed on a metal layer on the other surface of the insulating layer, and is bonded to a heat sink of the metal layer; the metal layer and the heat sink are formed by the bonded body according to claim 13 or 14, wherein one of the joint faces of the metal layer and the heat sink is made of aluminum; The other of the joint faces of the metal layer and the heat sink is made of nickel, and the metal layer and the heat sink side titanium are formed on the joint portion of the metal layer and the heat sink. layer, the metal layer or the bonding surface of the heat sink made of aluminum with, and located between the titanium layer, so that the Al 3 Ti solid solution of silicon aluminum - titanium - silicon layer; the Al - Ti - Si layer The first aluminum-titanium-ruthenium layer formed on the side of the titanium layer, and the metal layer or the fin side formed of aluminum formed on the joint surface, and having a niobium concentration higher than the first aluminum-titanium - the second layer is still low Aluminum-titanium-tantalum layer.
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Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
JP6111764B2 (en) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 Power module substrate manufacturing method
JP5672324B2 (en) 2013-03-18 2015-02-18 三菱マテリアル株式会社 Manufacturing method of joined body and manufacturing method of power module substrate
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
US9837363B2 (en) * 2014-07-04 2017-12-05 Mitsubishi Materials Corporation Power-module substrate unit and power module
CN107112298A (en) * 2014-10-16 2017-08-29 三菱综合材料株式会社 The power module substrate and its manufacture method of subsidiary cooler
JP6696214B2 (en) 2015-04-16 2020-05-20 三菱マテリアル株式会社 Bonded body, power module substrate with heat sink, heat sink, and method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, and method of manufacturing heat sink
JP6696215B2 (en) * 2015-04-16 2020-05-20 三菱マテリアル株式会社 Bonded body, power module substrate with heat sink, heat sink, and method of manufacturing bonded body, method of manufacturing power module substrate with heat sink, and method of manufacturing heat sink
US10497585B2 (en) 2015-04-16 2019-12-03 Mitsubishi Materials Corporation Bonded body, substrate for power module with heat sink, heat sink, method for producing bonded body, method for producing substrate for power module with heat sink, and method for producing heat sink
RU2018116592A3 (en) * 2015-10-07 2020-01-17
EP3163611A1 (en) * 2015-11-02 2017-05-03 ABB Technology Oy Power electronic assembly
JP2018006743A (en) * 2016-06-23 2018-01-11 三菱マテリアル株式会社 Method for manufacturing insulative circuit board, insulative circuit board, and thermoelectric conversion module
JP6407216B2 (en) * 2016-08-10 2018-10-17 株式会社東芝 Semiconductor module and production method thereof
CN106449567B (en) * 2016-11-26 2018-11-23 江苏拓博制冷科技有限公司 A kind of cooler
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Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06328271A (en) * 1993-05-19 1994-11-29 Kobe Steel Ltd Pipe joint for connecting aluminum pipe and copper pipe
JP3012835U (en) 1994-12-21 1995-06-27 有限会社ディンプルコ−ポレ−ション Short approach mat
JP3171234B2 (en) 1997-03-26 2001-05-28 三菱マテリアル株式会社 Ceramic circuit board with heat sink
JP3012835B2 (en) 1997-11-07 2000-02-28 電気化学工業株式会社 Substrate and its manufacturing method, metal joined body suitable for substrate
JP3922166B2 (en) 2002-11-20 2007-05-30 三菱マテリアル株式会社 Manufacturing method of power module substrate, power module substrate and power module
JP2006005149A (en) 2004-06-17 2006-01-05 Furukawa Circuit Foil Kk Conductive substrate and circuit board material with resistive layer
JP4737116B2 (en) 2007-02-28 2011-07-27 株式会社日立製作所 Joining method
US8304324B2 (en) 2008-05-16 2012-11-06 Corporation For National Research Initiatives Low-temperature wafer bonding of semiconductors to metals
JP5504842B2 (en) * 2009-11-20 2014-05-28 三菱マテリアル株式会社 Power module substrate, power module substrate with heat sink, power module, and method for manufacturing power module substrate
US20120068345A1 (en) * 2010-09-16 2012-03-22 Infineon Technologies Ag Layer stacks and integrated circuit arrangements
JP5705506B2 (en) * 2010-11-08 2015-04-22 昭和電工株式会社 Clad material for insulating substrate
JP3171234U (en) 2011-08-09 2011-10-20 正宜 田辺 Simple greenhouse
JP5950791B2 (en) * 2012-10-29 2016-07-13 日立金属Mmcスーパーアロイ株式会社 Composite member made of corrosion-resistant Ni-based alloy and aluminum or aluminum alloy

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