TWI596798B - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TWI596798B
TWI596798B TW101150516A TW101150516A TWI596798B TW I596798 B TWI596798 B TW I596798B TW 101150516 A TW101150516 A TW 101150516A TW 101150516 A TW101150516 A TW 101150516A TW I596798 B TWI596798 B TW I596798B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
nitride semiconductor
layer
light
conductive
Prior art date
Application number
TW101150516A
Other languages
English (en)
Chinese (zh)
Other versions
TW201340386A (zh
Inventor
丁鍾弼
黃淨鉉
金鍾國
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201340386A publication Critical patent/TW201340386A/zh
Application granted granted Critical
Publication of TWI596798B publication Critical patent/TWI596798B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • A—HUMAN NECESSITIES
    • A62—LIFE-SAVING; FIRE-FIGHTING
    • A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
    • A62B5/00—Other devices for rescuing from fire
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F19/00—Other details of constructional parts for finishing work on buildings
    • E04F19/08—Built-in cupboards; Masks of niches; Covers of holes enabling access to installations
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/02—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes rigidly mounted
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/06—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted
    • E06C9/08—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted with rigid longitudinal members
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
TW101150516A 2012-01-03 2012-12-27 發光裝置 TWI596798B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20120000622A KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템

Publications (2)

Publication Number Publication Date
TW201340386A TW201340386A (zh) 2013-10-01
TWI596798B true TWI596798B (zh) 2017-08-21

Family

ID=47428533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101150516A TWI596798B (zh) 2012-01-03 2012-12-27 發光裝置

Country Status (6)

Country Link
US (1) US9018652B2 (https=)
EP (1) EP2613368B1 (https=)
JP (1) JP6087142B2 (https=)
KR (1) KR20130079873A (https=)
CN (1) CN103187496B (https=)
TW (1) TWI596798B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758603B (zh) * 2014-07-03 2022-03-21 晶元光電股份有限公司 光電元件及其製造方法
CN105224120B (zh) * 2014-07-03 2018-07-31 宸鸿科技(厦门)有限公司 基板结构
TWI759602B (zh) * 2019-05-24 2022-04-01 晶元光電股份有限公司 半導體元件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070105260A1 (en) * 2005-11-08 2007-05-10 Sharp Kabushiki Kaisha Nitride-based semiconductor device and production method thereof
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
JP4254373B2 (ja) * 2003-06-24 2009-04-15 日亜化学工業株式会社 窒化物半導体素子
US20100019247A1 (en) * 2006-10-05 2010-01-28 Takahide Joichi Light emitting device using gan led chip

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JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
CN100446289C (zh) * 1998-03-12 2008-12-24 日亚化学工业株式会社 氮化物半导体元件
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP3804335B2 (ja) * 1998-11-26 2006-08-02 ソニー株式会社 半導体レーザ
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP2003168822A (ja) * 2001-11-30 2003-06-13 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
JP2007220973A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
TW200812113A (en) * 2006-05-23 2008-03-01 Alps Electric Co Ltd Semiconductor light emitting element and method for manufacturing the same
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
JP2009038239A (ja) * 2007-08-02 2009-02-19 Toshiba Corp 光半導体装置
JP5164641B2 (ja) * 2008-04-02 2013-03-21 Ｄｏｗａエレクトロニクス株式会社 電流狭窄型半導体発光素子の製造方法
KR101072200B1 (ko) * 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20140097442A1 (en) * 2012-10-09 2014-04-10 Industrial Technology Research Institute Nitride semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4254373B2 (ja) * 2003-06-24 2009-04-15 日亜化学工業株式会社 窒化物半導体素子
US20070105260A1 (en) * 2005-11-08 2007-05-10 Sharp Kabushiki Kaisha Nitride-based semiconductor device and production method thereof
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
US20100019247A1 (en) * 2006-10-05 2010-01-28 Takahide Joichi Light emitting device using gan led chip

Also Published As

Publication number Publication date
TW201340386A (zh) 2013-10-01
EP2613368A3 (en) 2016-02-17
US20130168711A1 (en) 2013-07-04
KR20130079873A (ko) 2013-07-11
JP6087142B2 (ja) 2017-03-01
JP2013140983A (ja) 2013-07-18
EP2613368B1 (en) 2020-05-06
CN103187496A (zh) 2013-07-03
EP2613368A2 (en) 2013-07-10
CN103187496B (zh) 2017-05-31
US9018652B2 (en) 2015-04-28

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