TWI584578B - Low-noise amplifier, folded low-noise amplifier and amplifier circuit module - Google Patents

Low-noise amplifier, folded low-noise amplifier and amplifier circuit module Download PDF

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TWI584578B
TWI584578B TW105108690A TW105108690A TWI584578B TW I584578 B TWI584578 B TW I584578B TW 105108690 A TW105108690 A TW 105108690A TW 105108690 A TW105108690 A TW 105108690A TW I584578 B TWI584578 B TW I584578B
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input
noise amplifier
low noise
output
adjustable
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TW105108690A
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TW201722067A (en
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林珩之
李建廣
邱耀德
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絡達科技股份有限公司
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Priority to US15/202,635 priority patent/US10181818B2/en
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低雜訊放大器、折疊低雜訊放大器及放大器電路模組 Low noise amplifier, folded low noise amplifier and amplifier circuit module

本發明是有關於一種放大器及電路模組,且特別是有關於一種低雜訊放大器、折疊低雜訊放大器及放大器電路模組。 The present invention relates to an amplifier and a circuit module, and more particularly to a low noise amplifier, a folded low noise amplifier, and an amplifier circuit module.

隨著天線技術不斷演進,發展出一種多頻帶天線裝置。請參照第1圖,其繪示傳統之多頻帶天線裝置1300的示意圖。多頻帶天線裝置1300包括一天線1310、一切換器1320、數個濾波器1330、一切換器1340、一低雜訊放大器(Low-noise amplifier,LNA)1350及一收發器(transceiver)1360。 As antenna technology continues to evolve, a multi-band antenna device has been developed. Please refer to FIG. 1 , which illustrates a schematic diagram of a conventional multi-band antenna device 1300 . The multi-band antenna device 1300 includes an antenna 1310, a switch 1320, a plurality of filters 1330, a switch 1340, a low-noise amplifier (LNA) 1350, and a transceiver 1360.

在切換器1340與低雜訊放大器1350所組成之放大器電路模組M13中,雜訊指數(noise figure)影響到多頻帶天線裝置1300的效能。雜訊指數越低,越能夠提高多頻帶天線裝置1300的效能。研究人員均致力於研究如何有降低放大器電路模組 M13的雜訊指數。 In the amplifier circuit module M13 composed of the switch 1340 and the low noise amplifier 1350, a noise figure affects the performance of the multi-band antenna device 1300. The lower the noise index, the more efficient the multi-band antenna device 1300 can be. Researchers are working on how to reduce the amplifier circuit module M13's noise index.

本發明係有關於一種低雜訊放大器、折疊低雜訊放大器及放大器電路模組,其透過偏壓電晶體在低雜訊放大器(或折疊低雜訊放大器)之內部實現切換器的功能,或者將切換器設置於低雜訊放大器(或折疊低雜訊放大器)之後,使得低雜訊放大器(或折疊低雜訊放大器)的雜訊指數變的更容易控制。 The present invention relates to a low noise amplifier, a folded low noise amplifier, and an amplifier circuit module that implements a switch function inside a low noise amplifier (or a folded low noise amplifier) through a bias transistor, or Setting the switch to a low noise amplifier (or folding a low noise amplifier) makes the noise index of the low noise amplifier (or folded low noise amplifier) easier to control.

根據本發明之第一方面,提出一種低雜訊放大器(Low-noise amplifier,LNA)。低雜訊放大器包括數個射頻輸入級(RF input stages)、至少一偏壓電晶體(bias transistor)及至少一射頻輸出級(RF output stage)。偏壓電晶體連接於此些射頻輸入級,用以提供一直流偏壓源(DC bias source)至此些射頻輸入級之其中之一,以隔離於此些射頻輸入級之其餘部分。射頻輸出級與此些射頻輸入級併聯。此些射頻輸入級共用一可調輸入電感(adjustable input inductor)。 According to a first aspect of the invention, a low noise amplifier (LNA) is proposed. The low noise amplifier includes a plurality of RF input stages, at least one bias transistor, and at least one RF output stage. A biasing transistor is coupled to the RF input stages for providing a DC bias source to one of the RF input stages to isolate the remainder of the RF input stages. The RF output stage is connected in parallel with the RF input stages. These RF input stages share an adjustable input inductor.

根據本發明之第二方面,提出一種折疊低雜訊放大器(Folded Low-noise amplifier,Folded LNA)。折疊低雜訊放大器包括數個射頻輸入級、至少一偏壓電晶體及一射頻輸出級。偏壓電晶體連接於此些射頻輸入級,用以提供一直流偏壓源至此些射頻輸入級之其中之一,以隔離於此些射頻輸入級之其餘部分。射頻輸出級與此些射頻輸入級併聯。射頻輸出級之數量僅為一。 射頻輸出級包括一可調輸出電感。此些射頻輸入級共用此可調輸出電感。 According to a second aspect of the present invention, a Folded Low-noise Amplifier (Folded LNA) is proposed. The folded low noise amplifier includes a plurality of RF input stages, at least one bias transistor, and an RF output stage. A biasing transistor is coupled to the RF input stages for providing a DC bias source to one of the RF input stages to isolate the remainder of the RF input stages. The RF output stage is connected in parallel with the RF input stages. The number of RF output stages is only one. The RF output stage includes an adjustable output inductor. These RF input stages share this tunable output inductor.

根據本發明之第三方面,提出一種放大器電路模組。放大器電路模組包括數個低雜訊放大器及一切換器。各個低雜訊放大器包括一射頻輸出級。切換器耦接於此些射頻輸出級,以切換此些低雜訊放大器。 According to a third aspect of the invention, an amplifier circuit module is provided. The amplifier circuit module includes a plurality of low noise amplifiers and a switch. Each low noise amplifier includes an RF output stage. The switch is coupled to the RF output stages to switch the low noise amplifiers.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

250、350、850、950、1050、1350‧‧‧低雜訊放大器 250, 350, 850, 950, 1050, 1350‧‧‧ low noise amplifier

450、550、650、750、1150、1250‧‧‧折疊低雜訊放大器 450, 550, 650, 750, 1150, 1250‧‧‧ folding low noise amplifier

800、1300‧‧‧多頻帶天線裝置 800, 1300‧‧‧Multi-band antenna device

810、1310‧‧‧天線 810, 1310‧‧‧ antenna

820、840、940、1040、1140、1240、1320、1340‧‧‧切換器 820, 840, 940, 1040, 1140, 1240, 1320, 1340‧‧ ‧ switchers

830、1330‧‧‧濾波器 830, 1330‧‧‧ filter

860、1360‧‧‧收發器 860, 1360‧‧‧ transceiver

BT、BT’‧‧‧偏壓電晶體 BT, BT’‧‧‧ biased crystal

CL0‧‧‧可調輸出電容 CL0‧‧‧ adjustable output capacitor

IN‧‧‧輸入端 IN‧‧‧ input

LL0‧‧‧可調輸出電感 LL0‧‧‧ adjustable output inductor

LS0‧‧‧可調輸入電感 LS0‧‧‧ adjustable input inductor

M8、M9、M10、M11、M12、M13‧‧‧放大器電路模組 M8, M9, M10, M11, M12, M13‧‧‧Amplifier Circuit Module

OUT‧‧‧輸出端 OUT‧‧‧ output

RFIS‧‧‧射頻輸入級 RFIS‧‧‧RF input stage

RFOS‧‧‧射頻輸出級 RFOS‧‧‧RF output stage

VB1、VB2‧‧‧直流偏壓源 VB1, VB2‧‧‧ DC bias source

第1圖繪示傳統之多頻帶天線裝置的示意圖。 Figure 1 is a schematic diagram showing a conventional multi-band antenna device.

第2圖繪示根據一實施例之低雜訊放大器(Low-noise amplifier,LNA)的示意圖。 FIG. 2 is a schematic diagram of a low noise amplifier (LNA) according to an embodiment.

第3圖繪示根據另一實施例之低雜訊放大器的示意圖。 FIG. 3 is a schematic diagram of a low noise amplifier according to another embodiment.

第4圖繪示根據另一實施例之折疊低雜訊放大器(Folded Low-noise amplifier,Folded LNA)的示意圖。 FIG. 4 is a schematic diagram of a Folded Low-noise Amplifier (Folded LNA) according to another embodiment.

第5圖繪示根據另一實施例之低雜訊放大器的示意圖。 FIG. 5 is a schematic diagram of a low noise amplifier according to another embodiment.

第6圖繪示根據另一實施例之低雜訊放大器的示意圖。 FIG. 6 is a schematic diagram of a low noise amplifier according to another embodiment.

第7圖繪示根據另一實施例之低雜訊放大器的示意圖。 FIG. 7 is a schematic diagram of a low noise amplifier according to another embodiment.

第8圖繪示根據一實施例之多頻帶天線裝置的示意圖。 FIG. 8 is a schematic diagram of a multi-band antenna device according to an embodiment.

第9圖繪示根據一實施例之放大器電路模組之示意圖。 FIG. 9 is a schematic diagram of an amplifier circuit module according to an embodiment.

第10圖繪示根據另一實施例之放大器電路模組之示意圖。 FIG. 10 is a schematic diagram of an amplifier circuit module according to another embodiment.

第11圖繪示根據另一實施例之放大器電路模組之示意圖。 11 is a schematic diagram of an amplifier circuit module according to another embodiment.

第12圖繪示根據另一實施例之放大器電路模組之示意圖。 FIG. 12 is a schematic diagram of an amplifier circuit module according to another embodiment.

請參照第2圖,其繪示根據一實施例之低雜訊放大器(Low-noise amplifier,LNA)250的示意圖。低雜訊放大器250包括數個射頻輸入級(RF input stages)RFIS、數個偏壓電晶體(bias transistor)BT及一射頻輸出級(RF output stage)RFOS。偏壓電晶體BT例如是N型金氧半場效電晶體。射頻輸出級RFOS與此些射頻輸入級RFIS併聯。 Please refer to FIG. 2 , which illustrates a schematic diagram of a low-noise amplifier (LNA) 250 according to an embodiment. The low noise amplifier 250 includes a plurality of RF input stages RFIS, a plurality of bias transistors BT, and an RF output stage RFOS. The bias transistor BT is, for example, an N-type gold oxide half field effect transistor. The RF output stage RFOS is in parallel with the RF input stages RFIS.

數個射頻輸入級RFIS用以從輸入端IN接收多個不同頻帶的射頻訊號。偏壓電晶體BT連接於此些射頻輸入級RFIS,用以提供一直流偏壓源(DC bias source)VB1至此些射頻輸入級RFIS之其中之一,以增加與其他射頻輸入級RFIS的隔離(isolation)。此外各個輸入端IN亦連接於直流偏壓源VB2。僅有被提供直流偏壓源VB1與直流偏壓源VB2的一個射頻輸入級RFIS能夠將射頻訊號傳送至輸出端OUT,其餘未被提供直流偏壓源VB1與直流偏壓源VB2的射頻輸入級RFIS則被隔離,而無法將射頻訊號傳送至輸出端OUT。 A plurality of RF input stages RFIS are used to receive a plurality of RF signals of different frequency bands from the input terminal IN. A bias transistor BT is coupled to the RF input stage RFIS to provide a DC bias source VB1 to one of the RF input stages RFIS to increase isolation from other RF input stage RFIS ( Isolation). In addition, each input terminal IN is also connected to a DC bias source VB2. Only one RF input stage RFIS provided with a DC bias source VB1 and a DC bias source VB2 can transmit an RF signal to the output terminal OUT, and the remaining RF input stages of the DC bias source VB1 and the DC bias source VB2 are not provided. The RFIS is isolated and cannot transmit RF signals to the output OUT.

如此一來,偏壓電晶體BT在低雜訊放大器250之內部實現了切換器的功能,使得低雜訊放大器250在不使用外部切換器的情況下,能夠在多頻帶中操作。少了外部切換器之後,低雜訊放大器250成為鏈路上的唯一元件,因此雜訊指數(noise figure)控制變的更容易。 As such, the bias transistor BT implements the function of the switch within the low noise amplifier 250 such that the low noise amplifier 250 can operate in multiple frequency bands without the use of an external switch. After the external switch is missing, the low noise amplifier 250 becomes the only component on the link, so the noise figure control becomes easier.

舉例來說,依據雜訊指數的Friis公式,兩個元件的雜訊指 數依據下式(1)計算,其中F total 表示總雜訊指數,F1表示第一級元件的雜訊指數,G1表示第一級元件的增益,F2表示第二級元件的雜訊指數,G2表示第二級元件的增益。由式(1)可知,當切換器與低雜訊放大器依序串接時,第二級元件的低雜訊放大器的雜訊指數不能太高,否則將導致總雜訊指數過高。 For example, according to the Friis formula of the noise index, the noise index of the two components is calculated according to the following formula (1), where F total represents the total noise index, and F 1 represents the noise index of the first-level component, G 1 Indicates the gain of the first stage component, F 2 represents the noise index of the second stage component, and G 2 represents the gain of the second stage component. It can be known from equation (1) that when the switch and the low noise amplifier are serially connected in series, the noise index of the low noise amplifier of the second level component cannot be too high, otherwise the total noise index will be too high.

相似地,依據雜訊指數的Friis公式,唯一元件的雜訊指數依據下式(2)計算,其中F total 表示總雜訊指數,F1表示第一級元件的雜訊指數。由式(2)可知,當低雜訊放大器為唯一元件時,低雜訊放大器的雜訊指數即為總雜訊指數,使得低雜訊放大器的雜訊指數變的更好控制。 Similarly, according to the Friis formula of the noise index, the noise index of the unique component is calculated according to the following formula (2), where F total represents the total noise index, and F 1 represents the noise index of the first-level component. From equation (2), when the low noise amplifier is the only component, the noise index of the low noise amplifier is the total noise index, which makes the noise index of the low noise amplifier better controlled.

F total =F1...............................................................(2) F total =F 1 ............................................. ..................(2)

此外,在本實施例中,此些射頻輸入級RFIS共用一可調輸入電感(adjustable input inductor)LS0。可調輸入電感LS0可根據於欲操作的射頻輸入級RFIS調整至特定電感值。 In addition, in this embodiment, the RF input stages RFIS share an adjustable input inductor LS0. The adjustable input inductor LS0 can be adjusted to a specific inductance value according to the RF input stage RFIS to be operated.

再者,在本實施例中,射頻輸出級RFOS之數量僅為一。射頻輸出級RFOS包括一可調輸出電感LL0及一可調輸出電容CL0。可調輸入電感LL0連接於偏壓電晶體BT。可調輸出電容CL0連接於輸出端OUT。此些射頻輸入級RFIS共用唯一的可調輸出電感LL0及唯一的可調輸出電容CL0。也就是說,本實施例透過共用的可調輸出電感LL0及共用的可調輸出電容CL0來實現多個射頻輸入級RFIS對應於單一個射頻輸出級RFOS的設計。 Moreover, in this embodiment, the number of RF output stages RFOS is only one. The RF output stage RFOS includes an adjustable output inductor LL0 and an adjustable output capacitor CL0. The adjustable input inductor LL0 is connected to the bias transistor BT. The adjustable output capacitor CL0 is connected to the output terminal OUT. These RF input stages RFIS share a unique adjustable output inductor LL0 and a unique adjustable output capacitor CL0. That is to say, in this embodiment, the design of the plurality of RF input stages RFIS corresponding to the single RF output stage RFOS is realized by the shared adjustable output inductor LL0 and the shared adjustable output capacitor CL0.

請參照第3圖,其繪示根據另一實施例之低雜訊放大器350的示意圖。第3圖之實施例與第2圖之實施例主要不同之處在於偏壓電晶體BT之數量僅為一,其餘相同之處不再贅述。此些射頻輸入級RFIS共用唯一的偏壓電晶體BT。由於所有的射頻輸入級RFIS均有共用此偏壓電晶體BT,故偏壓電晶體BT維持提供直流偏壓源VB1。而僅有被提供直流偏壓源VB2之一個射頻輸入級RFIS能夠將射頻訊號傳送至輸出端OUT,其餘未被提供直流偏壓源VB2的射頻輸入級RFIS則被隔離,而無法將射頻訊號傳送至輸出端OUT。 Please refer to FIG. 3 , which illustrates a schematic diagram of a low noise amplifier 350 according to another embodiment. The embodiment of FIG. 3 differs from the embodiment of FIG. 2 mainly in that the number of bias transistors BT is only one, and the rest will not be described again. These RF input stages RFIS share a unique bias transistor BT. Since all of the RF input stages RFIS share this bias transistor BT, the bias transistor BT maintains a DC bias source VB1. Only one RF input stage RFIS provided with a DC bias source VB2 can transmit the RF signal to the output terminal OUT, and the remaining RF input stage RFIS not provided with the DC bias source VB2 is isolated, and the RF signal cannot be transmitted. To the output OUT.

如此一來,雖然僅使用唯一一個共用的偏壓電晶體BT,仍可透過直流偏壓源VB2的控制,在低雜訊放大器250之內部實現了切換器的功能,使得低雜訊放大器250在不使用外部切換器的情況下,能夠在多頻帶中操作。少了外部切換器之後,低雜訊放大器250成為鏈路上的唯一元件,因此雜訊指數控制變的更容易。 In this way, although only one common bias transistor BT is used, the function of the switch can be realized inside the low noise amplifier 250 through the control of the DC bias source VB2, so that the low noise amplifier 250 is It is possible to operate in multiple frequency bands without using an external switch. After the external switch is missing, the low noise amplifier 250 becomes the only component on the link, so the noise index control becomes easier.

請參照第4圖,其繪示根據另一實施例之折疊低雜訊放大器(Folded Low-noise amplifier,LNA)450的示意圖。除了低雜訊放大器以外,折疊低雜訊放大器也可實現上述功能。如第4圖所示,折疊低雜訊放大器450包括數個射頻輸入級RFIS、數個偏壓電晶體BT’及一射頻輸出級RFOS。偏壓電晶體BT’例如是P型金氧半場效電晶體。射頻輸出級RFOS與此些射頻輸入級RFIS併聯。 Please refer to FIG. 4 , which illustrates a schematic diagram of a Folded Low-Noise Amplifier (LNA) 450 according to another embodiment. In addition to the low noise amplifier, the folded low noise amplifier can also achieve the above functions. As shown in FIG. 4, the folded low noise amplifier 450 includes a plurality of RF input stages RFIS, a plurality of bias transistors BT', and a RF output stage RFOS. The bias transistor BT' is, for example, a P-type MOS field effect transistor. The RF output stage RFOS is in parallel with the RF input stages RFIS.

在本實施例中,數個射頻輸入級RFIS用以從輸入端IN接收多個不同頻帶的射頻訊號。偏壓電晶體BT’連接於此些射頻輸入級RFIS,用以提供一直流偏壓源VB1至此些射頻輸入級RFIS之其中之一, 以增加其他射頻輸入級RFIS的隔離。此外各個輸入端IN亦連接於直流偏壓源VB2。僅有被提供直流偏壓源VB1與直流偏壓源VB2的一個射頻輸入級RFIS能夠將射頻訊號傳送至輸出端OUT,其餘未被提供直流偏壓源VB1與直流偏壓源VB2的射頻輸入級RFIS則被隔離,而無法將射頻訊號傳送至輸出端OUT。 In this embodiment, a plurality of RF input stages RFIS are used to receive a plurality of RF signals of different frequency bands from the input terminal IN. A biasing transistor BT' is coupled to the RF input stage RFIS for providing a DC bias source VB1 to one of the RF input stages RFIS, To increase the isolation of RFIS at other RF input stages. In addition, each input terminal IN is also connected to a DC bias source VB2. Only one RF input stage RFIS provided with a DC bias source VB1 and a DC bias source VB2 can transmit an RF signal to the output terminal OUT, and the remaining RF input stages of the DC bias source VB1 and the DC bias source VB2 are not provided. The RFIS is isolated and cannot transmit RF signals to the output OUT.

如此一來,偏壓電晶體BT’在折疊低雜訊放大器450之內部實現了切換器的功能,使得折疊低雜訊放大器450在不使用外部切換器的情況下,能夠在多頻帶中操作。少了外部切換器之後,折疊低雜訊放大器450成為鏈路上的唯一元件,因此雜訊指數控制變的更容易。 As such, the bias transistor BT' implements the function of the switch within the folded low noise amplifier 450, enabling the folded low noise amplifier 450 to operate in multiple frequency bands without the use of an external switch. After the external switch is missing, the folded low noise amplifier 450 becomes the only component on the link, so the noise index control becomes easier.

再者,在本實施例中,射頻輸出級RFOS之數量僅為一。射頻輸出級RFOS包括一可調輸出電感LL0及一可調輸出電容CL0。可調輸入電感LL0連接於偏壓電晶體BT。可調輸出電容CL0連接於輸出端OUT。此些射頻輸入級RFIS共用唯一的可調輸出電感LL0及唯一的可調輸出電容CL0。也就是說,本實施例透過共用的可調輸出電感LL0及共用的可調輸出電容CL0來實現多個射頻輸入級RFIS對應於單一個射頻輸出級RFOS的設計。 Moreover, in this embodiment, the number of RF output stages RFOS is only one. The RF output stage RFOS includes an adjustable output inductor LL0 and an adjustable output capacitor CL0. The adjustable input inductor LL0 is connected to the bias transistor BT. The adjustable output capacitor CL0 is connected to the output terminal OUT. These RF input stages RFIS share a unique adjustable output inductor LL0 and a unique adjustable output capacitor CL0. That is to say, in this embodiment, the design of the plurality of RF input stages RFIS corresponding to the single RF output stage RFOS is realized by the shared adjustable output inductor LL0 and the shared adjustable output capacitor CL0.

請參照第5圖,其繪示根據另一實施例之折疊低雜訊放大器550的示意圖。第5圖之實施例與第4圖之實施例主要不同之處在於此些射頻輸入級RFIS共用一可調輸入電感(adjustable input inductor)LS0。可調輸入電感LS0可根據於欲操作的射頻輸入級RFIS調整至特定電感值。如此一來,元件數量能夠大幅降低,符合市場輕薄短小的趨勢。 Please refer to FIG. 5, which illustrates a schematic diagram of a folded low noise amplifier 550 according to another embodiment. The embodiment of FIG. 5 differs from the embodiment of FIG. 4 in that the RF input stage RFIS shares an adjustable input inductor LS0. The adjustable input inductor LS0 can be adjusted to a specific inductance value according to the RF input stage RFIS to be operated. As a result, the number of components can be significantly reduced, in line with the trend of light and thin market.

請參照第6圖,其繪示根據另一實施例之折疊低雜訊放大器 650的示意圖。第6圖之實施例與第4圖之實施例主要不同之處在於偏壓電晶體BT’之數量僅為一,其餘相同之處不再贅述。此些射頻輸入級RFIS共用唯一的偏壓電晶體BT’。由於所有的射頻輸入級RFIS均有共用此偏壓電晶體BT’,故偏壓電晶體BT’維持提供直流偏壓源VB1。而僅有被提供直流偏壓源VB2之一個射頻輸入級RFIS能夠將射頻訊號傳送至輸出端OUT,其餘未被提供直流偏壓源VB2的射頻輸入級RFIS則被隔離,而無法將射頻訊號傳送至輸出端OUT。 Please refer to FIG. 6 , which illustrates a folded low noise amplifier according to another embodiment. Schematic of the 650. The embodiment of Fig. 6 differs from the embodiment of Fig. 4 in that the number of bias transistors BT' is only one, and the rest will not be described again. These RF input stages RFIS share a unique bias transistor BT'. Since all of the RF input stages RFIS share this bias transistor BT', the bias transistor BT' maintains a DC bias source VB1. Only one RF input stage RFIS provided with a DC bias source VB2 can transmit the RF signal to the output terminal OUT, and the remaining RF input stage RFIS not provided with the DC bias source VB2 is isolated, and the RF signal cannot be transmitted. To the output OUT.

如此一來,雖然僅使用唯一一個共用的偏壓電晶體BT’,仍可透過直流偏壓源VB2的控制在折疊低雜訊放大器650之內部實現了切換器的功能,使得折疊低雜訊放大器650在不使用外部切換器的情況下能夠在多頻帶中操作。少了外部切換器之後,折疊低雜訊放大器650成為鏈路上的唯一元件,因此雜訊指數控制變的更容易。 In this way, although only one common bias transistor BT' is used, the function of the switch can be realized inside the folded low noise amplifier 650 through the control of the DC bias source VB2, so that the low noise amplifier is folded. The 650 is capable of operating in multiple frequency bands without the use of an external switch. After the external switch is missing, the folded low noise amplifier 650 becomes the only component on the link, so the noise index control becomes easier.

請參照第7圖,其繪示根據另一實施例之折疊低雜訊放大器750的示意圖。第7圖之實施例與第6圖之實施例主要不同之處在於射頻輸入級RFIS共用一可調輸入電感LS0。可調輸入電感LS0可根據於欲操作的射頻輸入級RFIS調整至特定電感值。如此一來,元件數量能夠大幅降低,符合市場輕薄短小的趨勢。 Please refer to FIG. 7 , which illustrates a schematic diagram of a folded low noise amplifier 750 according to another embodiment. The main difference between the embodiment of FIG. 7 and the embodiment of FIG. 6 is that the RF input stage RFIS shares an adjustable input inductor LS0. The adjustable input inductor LS0 can be adjusted to a specific inductance value according to the RF input stage RFIS to be operated. As a result, the number of components can be significantly reduced, in line with the trend of light and thin market.

請參照第8圖,其繪示根據一實施例之多頻帶天線裝置800的示意圖。多頻帶天線裝置800包括一天線810、一切換器820、數個濾波器830、一切換器840、數個低雜訊放大器(Low-noise amplifier,LNA)850及一收發器(transceiver)860。切換器840耦接於此些低雜訊放大器850,以切換此些低雜訊放 大器850。 Please refer to FIG. 8 , which illustrates a schematic diagram of a multi-band antenna device 800 in accordance with an embodiment. The multi-band antenna device 800 includes an antenna 810, a switch 820, a plurality of filters 830, a switch 840, a plurality of low-noise amplifiers (LNAs) 850, and a transceiver 860. The switch 840 is coupled to the low noise amplifiers 850 to switch the low noise amplifiers. Large 850.

在切換器840與低雜訊放大器850所組成之放大器電路模組M8中,低雜訊放大器850為第一級元件,切換器840為第二級元件。根據上式(1)所述,第一級元件的雜訊指數較容易控制。因此,低雜訊放大器的雜訊指數變得容易控制。 In the amplifier circuit module M8 composed of the switch 840 and the low noise amplifier 850, the low noise amplifier 850 is a first stage element, and the switch 840 is a second stage element. According to the above formula (1), the noise index of the first-stage component is easier to control. Therefore, the noise index of the low noise amplifier becomes easy to control.

請參照第9圖,其繪示根據一實施例之放大器電路模組M9之示意圖。放大器電路模組M9包括數個低雜訊放大器950及一切換器940。各個低雜訊放大器950包括一射頻輸入級RFIS及一射頻輸出級RFOS。切換器940耦接於此些射頻輸出級RFOS,以切換此些低雜訊放大器950。 Please refer to FIG. 9 , which illustrates a schematic diagram of an amplifier circuit module M9 according to an embodiment. The amplifier circuit module M9 includes a plurality of low noise amplifiers 950 and a switch 940. Each of the low noise amplifiers 950 includes a radio frequency input stage RFIS and a radio frequency output stage RFOS. The switch 940 is coupled to the RF output stages RFOS to switch the low noise amplifiers 950.

在此實施例中,數個射頻輸入級RFIS分別對應於數個射頻輸出級RFOS。不同頻帶之多個射頻訊號由此些射頻輸入級RFIS輸入後,再分別由此些射頻輸出級RFOS輸出,最後則由切換器940進行切換。由於低雜訊放大器950為第一級元件,切換器940為第二級元件。根據上式(1)所述,屬於第一級元件的低雜訊放大器的雜訊指數變得較容易控制。 In this embodiment, the plurality of RF input stages RFIS correspond to a plurality of RF output stages RFOS, respectively. A plurality of RF signals of different frequency bands are input by the RF input stages RFIS, and then output by the RF output stages RFOS, respectively, and finally switched by the switch 940. Since the low noise amplifier 950 is a first stage component, the switch 940 is a second stage component. According to the above formula (1), the noise index of the low noise amplifier belonging to the first stage element becomes easier to control.

請參照第10圖,其繪示根據另一實施例之放大器電路模組M10之示意圖。放大器電路模組M10包括數個低雜訊放大器1050及一切換器1040。第10圖之實施例與第9圖之實施例主要不同之處在於此些低雜訊放大器1050之射頻輸入級RFIS共用一可調輸入電感(adjustable input inductor)LS0。可調輸入電感LS0可根據於欲操作的射頻輸入級RFIS調整至特定電感值。如此一來,元件數量能夠大幅降低,符合市場輕薄短小的 趨勢。 Please refer to FIG. 10 , which illustrates a schematic diagram of an amplifier circuit module M10 according to another embodiment. The amplifier circuit module M10 includes a plurality of low noise amplifiers 1050 and a switch 1040. The embodiment of FIG. 10 differs from the embodiment of FIG. 9 mainly in that the RF input stage RFIS of the low noise amplifier 1050 shares an adjustable input inductor LS0. The adjustable input inductor LS0 can be adjusted to a specific inductance value according to the RF input stage RFIS to be operated. As a result, the number of components can be greatly reduced, in line with the market's light and short trend.

請參照第11圖,其繪示根據另一實施例之放大器電路模組M11之示意圖。除了低雜訊放大器以外,折疊低雜訊放大器也可實現上述功能。放大器電路模組M11包括數個折疊低雜訊放大器1150及一切換器1140。如第11圖所示,折疊低雜訊放大器1150包括數個射頻輸入級RFIS、數個偏壓電晶體BT’及一射頻輸出級RFOS。偏壓電晶體BT’例如是P型金氧半場效電晶體。射頻輸出級RFOS與此些射頻輸入級RFIS併聯。 Please refer to FIG. 11 , which illustrates a schematic diagram of an amplifier circuit module M11 according to another embodiment. In addition to the low noise amplifier, the folded low noise amplifier can also achieve the above functions. The amplifier circuit module M11 includes a plurality of folded low noise amplifiers 1150 and a switch 1140. As shown in Fig. 11, the folded low noise amplifier 1150 includes a plurality of RF input stages RFIS, a plurality of bias transistors BT', and a RF output stage RFOS. The bias transistor BT' is, for example, a P-type MOS field effect transistor. The RF output stage RFOS is in parallel with the RF input stages RFIS.

請參照第12圖,其繪示根據另一實施例之放大器電路模組M12之示意圖。放大器電路模組M12包括數個折疊低雜訊放大器1250及一切換器1240。第12圖之實施例與第11圖之實施例主要不同之處在於此些折疊低雜訊放大器1250之射頻輸入級RFIS共用一可調輸入電感(adjustable input inductor)LS0。可調輸入電感LS0可根據於欲操作的射頻輸入級RFIS調整至特定電感值。如此一來,元件數量能夠大幅降低,符合市場輕薄短小的趨勢。 Please refer to FIG. 12, which illustrates a schematic diagram of an amplifier circuit module M12 according to another embodiment. The amplifier circuit module M12 includes a plurality of folded low noise amplifiers 1250 and a switch 1240. The embodiment of FIG. 12 differs from the embodiment of FIG. 11 in that the RF input stage RFIS of the folded low noise amplifier 1250 shares an adjustable input inductor LS0. The adjustable input inductor LS0 can be adjusted to a specific inductance value according to the RF input stage RFIS to be operated. As a result, the number of components can be significantly reduced, in line with the trend of light and thin market.

根據上述實施例,可以透過偏壓電晶體在低雜訊放大器(或折疊低雜訊放大器)之內部實現切換器的功能,使得低雜訊放大器(或折疊低雜訊放大器)在不使用外部切換器的情況下能夠在多頻帶中操作。少了外部切換器之後,低雜訊放大器(或折疊低雜訊放大器)成為鏈路上的唯一元件,因此低雜訊放大器(或折疊低雜訊放大器)的雜訊指數變的更容易控制。或者,將切換器設置於低雜訊放大器(或折疊低雜訊放大器)之後,而使低雜訊放大器(或折疊低雜訊放大器)作為第一級元件,切換器作為第二級元件。作為第一級元件的低雜訊放大器(或 折疊低雜訊放大器)的雜訊指數也會變得較容易控制。 According to the above embodiment, the function of the switch can be implemented inside the low noise amplifier (or the folded low noise amplifier) through the bias transistor, so that the low noise amplifier (or the folded low noise amplifier) is switched without external use. In the case of a device, it is possible to operate in multiple bands. After the external switch is missing, the low noise amplifier (or folded low noise amplifier) becomes the only component on the link, so the noise index of the low noise amplifier (or folded low noise amplifier) becomes easier to control. Alternatively, the switch is placed after the low noise amplifier (or folded low noise amplifier), with the low noise amplifier (or folded low noise amplifier) as the first stage component and the switch as the second stage component. a low noise amplifier as a first stage component (or The noise index of the folded low noise amplifier) also becomes easier to control.

綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

250‧‧‧低雜訊放大器 250‧‧‧Low noise amplifier

BT‧‧‧偏壓電晶體 BT‧‧‧bias transistor

CL0‧‧‧可調輸出電容 CL0‧‧‧ adjustable output capacitor

IN‧‧‧輸入端 IN‧‧‧ input

LL0‧‧‧可調輸出電感 LL0‧‧‧ adjustable output inductor

LS0‧‧‧可調輸入電感 LS0‧‧‧ adjustable input inductor

OUT‧‧‧輸出端 OUT‧‧‧ output

RFIS‧‧‧射頻輸入級 RFIS‧‧‧RF input stage

RFOS‧‧‧射頻輸出級 RFOS‧‧‧RF output stage

VB1、VB2‧‧‧直流偏壓源 VB1, VB2‧‧‧ DC bias source

Claims (8)

一種低雜訊放大器(Low-noise amplifier,LNA),包括:複數個射頻輸入級(RF input stages);一偏壓電晶體(bias transistor),連接於該些射頻輸入級,用以提供一直流偏壓源(DC bias source)至該些射頻輸入級之其中之一,以隔離於該些射頻輸入級之其餘部分;以及至少一射頻輸出級(RF output stage),該至少一射頻輸出級與該些射頻輸入級併聯,該些射頻輸入級共用一可調輸入電感(adjustable input inductor),該可調輸入電感係為單一元件;其中該偏壓電晶體之數量僅為一,該些射頻輸入級共用該偏壓電晶體。 A low-noise amplifier (LNA) includes: a plurality of RF input stages; a bias transistor connected to the RF input stages for providing a DC current And a bias source (DC bias source) to one of the RF input stages to isolate the remaining portions of the RF input stages; and at least one RF output stage, the at least one RF output stage and The RF input stages are connected in parallel, and the RF input stages share an adjustable input inductor, the adjustable input inductor is a single component; wherein the number of the bias transistors is only one, the RF inputs The stage shares the bias transistor. 如申請專利範圍第1項所述之低雜訊放大器,其中該至少一射頻輸出級之數量僅為一,該射頻輸出級包括一可調輸出電感,該些射頻輸入級共用該可調輸出電感。 The low noise amplifier of claim 1, wherein the number of the at least one RF output stage is only one, the RF output stage comprises an adjustable output inductor, and the RF input stages share the adjustable output inductor . 如申請專利範圍第2項所述之低雜訊放大器,其中該射頻輸出級包括一可調輸出電容,該些射頻輸入級共用該可調輸出電容。 The low noise amplifier of claim 2, wherein the RF output stage comprises an adjustable output capacitor, the RF input stages sharing the adjustable output capacitor. 一種折疊低雜訊放大器(Folded Low-noise amplifier,Folded LNA),包括:複數個射頻輸入級(RF input stages);一偏壓電晶體(bias transistor),連接於該些射頻輸入級,用以提供一直流偏壓源(DC bias source)至該些射頻輸入級之其中 之一,以隔離於該些射頻輸入級之其餘部分;以及一射頻輸出級(RF output stage),該射頻輸出級與該些射頻輸入級併聯,該射頻輸出級之數量僅為一,該射頻輸出級包括一可調輸出電感(adjustable output inductor),該些射頻輸入級共用該可調輸出電感;其中該偏壓電晶體之數量僅為一,該些射頻輸入級共用該偏壓電晶體。 A Folded Low-noise Amplifier (Folded LNA) includes: a plurality of RF input stages; a bias transistor connected to the RF input stages for Providing a DC bias source to the RF input stages One is to be isolated from the rest of the RF input stages; and an RF output stage is connected in parallel with the RF input stages, the number of the RF output stages is only one, the RF The output stage includes an adjustable output inductor, and the RF input stages share the adjustable output inductor; wherein the number of the bias transistors is only one, and the RF input stages share the bias transistor. 如申請專利範圍第4項所述之折疊低雜訊放大器,其中該射頻輸出級包括一可調輸出電容,該些射頻輸入級共用該可調輸出電容。 The folded low noise amplifier of claim 4, wherein the RF output stage comprises an adjustable output capacitor, the RF input stages sharing the adjustable output capacitor. 如申請專利範圍第4項所述之折疊低雜訊放大器,其中該些射頻輸入級共用一可調輸入電感(adjustable input inductor)。 The folded low noise amplifier of claim 4, wherein the RF input stages share an adjustable input inductor. 一種放大器電路模組,包括:複數個低雜訊放大器(Low-noise amplifier,LNA),各該低雜訊放大器包括一射頻輸出級;以及一切換器,耦接於該些射頻輸出級,以切換該些低雜訊放大器,其中各該低雜訊放大器包括一射頻輸入級(RF input stage),該些射頻輸入級共用一可調輸入電感(adjustable input inductor),該可調輸入電感係為單一元件。 An amplifier circuit module includes: a plurality of low-noise amplifiers (LNAs), each of the low-noise amplifiers includes an RF output stage, and a switch coupled to the RF output stages to Switching the low noise amplifiers, wherein each of the low noise amplifiers includes an RF input stage, the RF input stages share an adjustable input inductor, and the adjustable input inductor is Single component. 如申請專利範圍第7項所述之放大器電路模組,其中各該低雜訊放大器係為一折疊低雜訊放大器(Folded Low-noise amplifier,Folded LNA)。 The amplifier circuit module of claim 7, wherein each of the low noise amplifiers is a Folded Low-noise Amplifier (Folded LNA).
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