TWI576951B - 用以徑向調整橫越基片表面之溫度曲線的靜電夾頭系統及製程 - Google Patents

用以徑向調整橫越基片表面之溫度曲線的靜電夾頭系統及製程 Download PDF

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TWI576951B
TWI576951B TW099102763A TW99102763A TWI576951B TW I576951 B TWI576951 B TW I576951B TW 099102763 A TW099102763 A TW 099102763A TW 99102763 A TW99102763 A TW 99102763A TW I576951 B TWI576951 B TW I576951B
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馬提 路克
丹尼爾 Ｊ 迪麥
理 傑 永
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瑪森科技公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/06—Influence generators
    • H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Description

用以徑向調整橫越基片表面之溫度曲線的靜電夾頭系統及製程
本發明申請案請求2009年四月二日提申之美國臨時專利申請案第61/149876號之權利，其內容在此併入以供參考。
本發明係有關一種夾頭系統，尤其是用於維持橫越基片表面之所要的溫度曲線之靜電夾頭系統。
多種處理室係已可取得，用於加工不同的工件及基片。該基片可包括，例如，玻璃板、膜、緞帶、太陽能板、鏡子、液晶顯示器、半導體晶圓、及相似之類等。許多不同的處理室已經可以取得，例如，於製造積體電路期間用於加工半導體晶圓。該處理室可用於退火晶圓，執行化學氣相沉積、電漿增強的化學氣相沉積、蝕刻方法及其他沉積方法。
該室典型地包含一基片握持器，例如靜電夾頭，在加工期間持住基片。一典型的靜電夾頭包含一或更多的夾具電極，其由介電層加以包覆。夾具電極係用於產生一靜電夾力，用於握住基片於靜電夾頭的頂表面。基片穩固地握持在夾頭上後，一處理氣體被引介至室中及形成一電漿用於加工該基片。該基片係可由CVD、PVD、蝕刻、植入、氧化、氮化及其他加工進行處理。
在許多處理中，想要控制處理期間的基片溫度。例如，如果基片的溫度係均勻的及以想要的速率上升或下降至最高或最低點，則處理可予以最佳化。在某些實施例中，想要將基片分割成為數個加熱區，其中在基片加熱期間，每一加熱區係維持於不同的溫度，以補償橫越基片表面之不同的加熱效應。例如，一基片能包含一內加熱區及一外周加熱區，其中該外周加熱區係維持在較高於該內加熱區之溫度，以補償基片外周所發生的額外的熱損失。鄰近加熱區係維持於不同溫度的情況下，較佳地係具有一介於鄰近加熱區之間的急劇或陡峭的溫度梯度，以更加合適地補償加工期間熱效應的改變。
因此，對於一允許徑向地調整或控制該橫越基片表面之溫度曲線的靜電夾頭總成，及其提供鄰近加熱區之間的急劇溫度曲線，係存有需求。
本發明之觀點及優點，將部份地敍說於以下的說明中，或其可經由該說明而成為顯著的，或經由本發明之實施而加以學習。
本發明之一示範性實施例提供一系統，用於維持橫越基片表面之溫度曲線。該系統包含一基座支承，其具有一基座熱控制系統，適用於提供一基座熱區，該基座熱區具有一基於基座熱控制系統之輸出的熱特徴。該基座熱區界定一橫越該基座支承表面之實質均勻的溫度曲線。該靜電夾頭總成進一包含一靜電夾頭，由該基座支承加以支持。該靜電夾頭包含一夾具電極及多數個加熱電極。該加熱電極包括一內加熱電極及一由縫隙距離加以隔離之外周加熱電極。該內加熱電極界定一內加熱區，其具有基於該內加熱電極輸出之熱特徴。該外周加熱電極界定一外周加熱區，其具有基於該外周加熱電極輸出之熱特徵。該靜電夾頭總成包含一控制系統，適用於藉由改變該基座熱控制系統、該內加熱電極或該外周加熱電極之至少一者的輸出，調整該橫越該基片表面之溫度曲線。
在本具體實施例之一變型中，該控制系統係適用於藉由改變該基座熱控制系統、該內加熱電極或該外周加熱電極之至少一者的輸出，而調整一介於該內加熱區及該外周加熱區之間的溫度梯度。
在本具體實施例之另一變型中，該夾具電極可為單極性電極或雙極性電極。該靜電夾頭總成基本上也能夠由低電導性陶瓷材料(如氧化鋁)加以組成。該靜電夾頭之頂表面可包含一凸出的外周密封環，及多數個凸粒(mesas)，其高度大約相同於該凸出的外周密封環之高度。
在本具體實施例之另一變型中，該基座熱控制系統可包含一流體流動通道，用於循環一熱交換流體。例如，該基座熱控制系統可包含一內流體流動通道及一外周流體流動通道，此兩者係受到控制而提供該橫越基座支承表面之實質均勻的溫度曲線。基座熱區之熱特徵能夠藉由調整基座熱控制系統之輸出而加以改變，例如，藉由調整溫度、或流經該流體流動通道之流體。
在本具體實施例之另一變型中，該靜電夾頭包含一位在該內加熱電極及該外周加熱電極之間的額外的加熱電極。藉由激發該額外的加熱電極，可調整該內加熱電極及該外周加熱電極之間的縫隙距離尺寸。該控制器適用於藉由調整該縫隙距離尺寸而調整該內加熱區及該外周加熱之間的溫度梯度。
本發明之另一示範性實施例提供一系統，其用於在加工期間維持一橫越基片表面之溫度曲線。該系統包含一基座，界定有一實質均勻的溫度曲線橫越該基座表面；及一靜電夾頭，包括一夾具電極及多數個加熱電極，該加熱電極包括一界定有一內加熱區的內加熱電極及一界定有一外周加熱區的外周加熱電極。該內加熱電極及該外周加熱電極係由一尺寸足以在該外周加熱區及該內加熱區之間產生溫度梯度的縫隙距離加以隔離。該溫度梯度的數值在外周加熱區之溫度受到維持而高於該內加熱區溫度約28.5℃時，係至少約6℃/cm。例如，該溫度梯度係至少約10℃/cm。在本示範性實施例之一變型中，該縫隙距離係約15mm~35mm，例如約18mm~30mm，如約20mm，或其他任何介於該數值之間的縫隙距離或縫隙距離範圍值。
本發明之另一示範性實施例提供一用於調整該橫越基片表面之溫度曲線的方法。該方法包括：將一基片安置在一包括有一靜電夾頭的靜電夾頭總成上。該靜電夾頭包括一夾具電極、一界定有一內加熱區之內加熱電極、及一界定有一外周加熱區之外周加熱電極。該內加熱電極及該外周加熱電極係由一縫隙距離加以隔離。該方法進一步包括：藉由激發該夾具電極而將基片夾在該靜電夾頭總成上；及藉由調整該內加熱電極及該外周加熱電極之間的縫隙距離尺寸，而調整該介於該內加熱區及該外周加熱區之間的溫度梯度。
在本具體實施例之一變型中，該內加熱電極及該外周加熱電極之間的縫隙距離的尺寸，可藉由激發一位在該內加熱電極及該外周加熱電極之間的額外的加熱電極而加以調整。在本具體實施例之另一變型中，藉由改變供應至該內加熱電極或該外周加熱電極的電能、或藉由調節一流經該基座之熱轉移流體，而調整該介於該內加熱區及該外周加熱區之間的溫度梯度。
本發明這些及其他特徴、觀點及優點，在參照以下的說明及所附的申請專利範圍之後，係可更加受到瞭解。併入說明書中而作為說明書之一部份之所附的圖式、說明性的本發明實施例及連同該說明書，只用於解釋本發明之原則而已。
現在以本發明實施例進行詳細描述，其一或更多的例子是圖解於圖式中。每一例子只供解釋本發明而不限制本發明。事實上，一般精於本項技藝人士均可輕易地在不離開本發明範圍之下完成許多改變及變型。例如，作為一實施例之部份的所圖解的或所描述的特徵，係可用於其他實施例而產生一進一步的實施例。因此，本發明打算包含這類落入後附申請專利範圍內及其等價者之修改及變型。
一般而言，本發明係揭示一靜電夾頭系統，及一加工期間用於支持一基片、及維持所想要的橫越基片表面之溫度曲線的方法。一示範性溫度曲線係圖示於第八圖，其係與基片外周緣之距離的函數。溫度曲線亦得圖解為與基片中心之距離的函數。
本示範性實施例的靜電夾頭總成能包含一基座支承，其具有一基座熱控制系統，適用於提供一基座熱區。該基座熱區界定一橫越基座支承表面之實質均勻的溫度曲線。該基座熱區具有基於該基座熱控制系統輸出之熱特徵。
靜電夾頭總成進一步包含一靜電夾頭，其受到該基座支承之支持。靜電夾頭能具有一夾具電極及多數個獨立控制的加熱電極。獨立控制的加熱電極包含一內加熱電極及一外周加熱電極。該內加熱電極界定一內加熱區，其具有一基於該內加熱電極輸出之熱特徵。該外周加熱電極界定一外周加熱區，其具有一基於該外周加熱電極輸出之熱特徵。
內加熱電極及外周加熱電極係可由一縫隙距離加以隔離。在本文中，所謂的”縫隙距離”係指，受激發之具有距離之加熱電極之間的空間或縫隙。縫隙距離較佳地包括一低熱導的介電材料，如氧化鋁。該縫隙距離亦可包括一額外的尚未被激發的加熱電極，例如在加熱電極之間具有可移動介面之靜電夾頭總成之實施例。縫隙距離的尺寸係指受激發之加熱電極之間的分離距離。
在某些實施例中，靜電夾頭總成包含一控制系統，其適用於藉由改變基座熱控制系統、內加熱電極或外周加熱電極之輸出，而徑向地調控或調整該橫越基片表面之溫度曲線。該控制系統也適用於藉由改變加熱電極間縫隙距離之尺寸而徑向地調控或調整該橫越基片表面之溫度曲線。該控制系統可包含一單一的控制器或多數個控制器，用於改變基座熱控制系統、內加熱電極或外周加熱電極之輸出。
靜電夾頭之各個加熱區係可維持於不同溫度之下。例如，外周加熱區之溫度能夠維持在內加熱區溫度之上。在這些情況下，在內加熱區及外周加熱區之間，出現一溫度梯度。溫度梯度係指單位基片長度上之基片溫度差。例如，6℃/cm之溫度梯度係指在1cm長度上溫度改變6℃。
依照本發明實施例之靜電夾頭總成，允許使用者藉由改變基座熱控制系統、內加熱電極及/或外周加熱電極之至少一者之輸出，或藉由調整在內加熱區及外周加熱區之間的縫隙距離尺床，而調整在內加熱區及外周加熱區之間的溫度梯度。藉由這個方式，依照本發明實施例之靜電夾頭總成在加工期間，其取得所要之基片上溫度梯度的能力受到增強。
參照第一圖，一示範性的靜電夾頭總成100包含一金屬基座支承200及一靜電夾頭300。基座支承200具有一頂表面，用於支撐靜電夾頭300。靜電夾頭300之頂表面或夾具表面310在加工期間支撐基片400。基片400可為一半導體晶圓，其被施加電漿蝕刻加工、熱加工或其他加工。
靜電夾頭300能利用彈性膠黏劑而附著在基座支承200。該膠黏劑應為薄的，以降低在基座支承200及靜電夾頭300間，由不同熱膨脹所產生的應力。該膠黏劑亦應確保在基座支承200及靜電夾頭300間的優良熱接觸。例如，該膠黏劑層具有大約1.1 W/mK的熱傳導，及約0.28mm的厚度。
基座支承200可由金屬(如鋁)加以製成，及包含一熱控制系統，用於維持橫越基座支承200之全部頂表面上的實質均勻之溫度曲線。熱控制系統提供一基座熱區，其具有基於熱控制系統輸出之熱特徵。例如，基座熱區之熱特徵，能藉由整調流經基座之熱交換流體的流動、或藉由調整流經基座之熱交換流體的溫度，而加以改變。
在第一或第二圖中，該熱控制系統包含兩個分離的通道220、240，用於循環流經該基座之熱交換流體。這兩個分離的通道220、240係在相同溫度下操作，以提供均勻的基座熱區。多種溫度控制裝置係能夠用於維持通道220、240的溫度於相同之溫度。例如，通道220、240能由單一的或雙重的熱交換循環系統加以連接，而控制該兩個通道於相同之溫度。
在某些實施例中，使用兩個通道220、240係較佳的，因為單一的通道無法抽出足夠的熱。例如，單一的通道可能太長，造成流經單一通道之液體的熱性質，在其離開通道之前，受到實質之改變。此外，流量維持為(例如)3GPM之兩個通道，相較於流量維持為(例如)6GPM的單一通道(即較小的管線及連接)，係較容易安裝的。基座支承200具有兩個入口222、242，及兩個出口224、244，用於循環流經該位在基座主體內部之兩個分離通道220、240之兩個熱控制流。該熱控制液可為水二醇混合物或其他合適的熱交換液體。
如第三圖所示，靜電夾頭300包含夾具電極320及多數個獨立控制的加熱電極330。夾具電極320用於產生一靜電夾力，以夾住基片400於靜電夾頭300之夾具表面310。加熱電極330用於界定多數個加熱區。加熱區之熱特徵係藉由控制該獨立控制的加熱電極330，而受到調整。
靜電夾頭300可由多種材料加以製成，包含陶瓷材料。較佳地，該靜電夾頭材料具有低熱導性，以維持相鄰熱區之間的陡峭溫度梯度。例如，靜電夾頭300可由約94% Al2O3及6% SiO2之組成物加以製成。
靜電夾頭300可由多層綠色的或部份燒結型陶瓷，及三或四層分佈在該陶瓷層間的薄膜金屬電極加以製成。例如，第五圖圖解一多層的陶瓷靜電夾頭300。靜電夾頭300包含位在兩個陶瓷層間的夾具電極320，及位在兩個不同陶瓷層間的加熱電極330。所有的陶瓷層體及電極，經歷最終的燒結，形成最終的靜電夾頭300。
如第四圖所示，靜電夾頭300的最終製作，可牽涉到凸出的夾具表面310之形成，其包括一凸出的外周環312，在被夾在靜電夾頭300之夾具表面310上的基片400之底表面上，將形成一近似密封。凸出的外周環312可具有一高度313，例如約5μm。靜電夾頭之其餘夾具表面310能含有多數個凸粒315，其高度相同於外周環312者。凹槽318允許熱轉移氣體(例如氦或其他熱轉移氣體)，在靜電夾頭300夾具表面310以及固定在靜電夾頭300之基片400之間流動。
靜電夾頭300可為Johnsen-Rahbek靜電夾頭，或Coulombic型靜電夾頭300。Johnsen-Rahbek靜電夾頭，在靜電夾頭300夾具表面310及基片400之間，產生一靜電夾力。Coulombic型靜電夾頭在夾具電極320及基片400之間產生一靜電夾力。
夾具電極320能由金屬加以製成，例如鎢，或其他具有合適熱膨脹係數及電阻性的金屬，及能夠形成於單一陶瓷層表面之上，或在相鄰陶瓷層之間。夾具電極320能由沉積方法加以形成，例如網印、PVD、CVD、ALD或電漿或電弧噴霧。如第五圖所示，靜電夾頭300包含一單一柱連接325(single post connection 325)，用於連接夾具電極至一電源。一示範性之夾具電極320的樣式係圖解於第六圖。
靜電夾頭300可依雙極性或單極性構形加以操作。例如，在單極性構形中，單一碟狀的夾具電極320係安置在兩個陶瓷層之間。在雙極性構形中，兩個或更多的夾具電極320係安置在兩個陶瓷層之間。如果兩個夾具電極係連接至具有相對極性的電壓源，則靜電夾頭300係可作為單極性靜電夾頭加以操作。如果兩個夾具電極係連接至普通的電壓源，則靜電夾頭300係可作為單極性裝置加以操作。
第三圖所示的靜電夾頭300包含多數個獨立控制的薄膜阻抗性加熱電極330，其包埋在靜電夾頭300之內。加熱電極330可由金屬製成，例如鎢或其他合適的金屬，並由習用的沉積方法加以形成，如網印、PVD、CVD、ALD或電漿或電弧噴霧。每一加熱電極330界定一加熱區，其具有基於加熱電極330輸出之熱特徵。例如，多數個獨立控制的加熱電極330包含一內加熱電極334，其界定一內加熱區，及一外周加熱電極332，其界定一外周加熱區。內加熱電極334界定一碟形的加熱區，位在靜電夾頭300之中央。外周加熱電極332界定一環形的加熱區，包圍該內加熱區。內加熱區及外周加熱區係由一縫隙距離335加以隔離。第七圖圖解一依照本發明實施例之示範性樣式的加熱電極330。
內加熱區及外周加熱區的熱特徵，係可藉由內加熱電極及外周加熱電極各自輸出之改變而加以調整。例如，內加熱區的熱特徵，可藉由調整供應至內加熱電極334之電量而加以改變。相似地，外周加熱區的熱特徵，可藉由調整供應至外周加熱電極332之電量而加以改變。內加熱區及外周加熱區的熱特徵的調整能力，允許橫越基片表面之溫度曲線受到徑向上的調整。如第五圖所示，加熱電極330能夠經由管路337、加熱匯流排336及單一柱連接338，而連接到電源。
基片的溫度曲線，係可由多種溫度測量技術加以測量。例如，基片的溫度曲線，可藉由測量靜電夾頭在靠近其頂表面之位置上的溫度曲線加以粗估。在本發明全部內容中，所謂”加熱區的溫度”係指，加熱區內靠近靜電夾頭頂表面位置上之靜電夾頭的溫度。
在一示範性實施例中，一光纖溫度感應器能加以使用而監視溫度。在本實施例中，含有磷之小圓碟發出光源，其具有可預期的、與溫度成正比的衰變速率。磷塗覆的圓碟安置在靜電夾頭300夾具表面310附近，進而該測值可作為被夾在靜電夾頭300夾具表面310上之基片400的良好預測子。光纖係以磷塗覆圓碟之固定距離加以安置，而可信賴地捕捉由磷所發射的光線。
第八圖圖解橫越基片表面之示範性的所想要的溫度曲線之圖形。如所示者，相應於外周加熱區之基片外周緣，係已受到調整而取得較高的溫度(T2)，其係相比較於對應至內加熱區之基片中央部的溫度(T1)。在內加熱區及外周加熱區之間存有急劇的溫度梯度。
本發明的靜電夾頭總成，可用於調整內加熱區及外周加熱區之間的溫度梯度，進而該溫度梯度係較陡峭於習知技術已知之基片握持器所得的溫度梯度。例如，內加熱區及外周加熱區之間的溫度梯度，係可藉由改變該基座熱控制系統、內加熱電極或外周加熱電極之輸出，而加以調整。本案申請人亦已發現的是，溫度梯度可藉由改變內加熱電極及外周加熱電極之間的縫隙距離之尺寸，而加以調整。
一用於改變內加熱電極及外周加熱電極之間的縫隙距離尺寸的可移動的介面，係揭示在第九圖中。可移動介面包含額外的加熱電極336，被安置在內加熱電極334及外周加熱電極332之間。未有額外的加熱電極336受到激發時，縫隙距離335的尺寸係相同於內加熱電極334及外周加熱電極332之間的距離。然而，若有額外的加熱電極336受到激發時，縫隙距離335受到調整而變成縫隙距離335’。縫隙距離335’的尺寸係該額外加熱電極及外周或內加熱電極之間的距離，及其係小於原始縫隙距離335的尺寸。利用這個可移動介面，內加熱區及外周加熱區之間的溫度梯度，可藉由調整內加熱電極及外周加熱電極之間的縫隙距離尺寸，而加以調整。依照這個方式，可在內加熱區及外周加熱區之間維持一急劇的或陡峭的溫度梯度。
例如，第十及第十一圖提供模擬結果，解說由內加熱區及外周加熱區之間的縫隙距離尺寸之改變，而對於內加熱區及外周加熱區之間的溫度梯度所產生的效應。在執行該模擬時，外周加熱區係維持高於內加熱區約28.5℃之溫度。第十及第十一圖提供溫度差的圖表，其係依照與靜電夾頭總成之靜電夾頭中心之距離的函數加以繪製，其中該靜電夾頭總成在在內加熱電極及外周加熱電極之間的縫隙距離係已改變。如所示者，溫度梯度之急刻程度或陡峭度，係取決於內加熱電極及外周加熱電極之間的縫隙距離之尺寸。更具體而言，溫度梯度由在2mm縫隙時的6℃/2cm，改變成35mm縫隙時的10℃/cm。
在這些例子中，溫度梯度係由計算溫度差異曲線(temperature difference curve)的斜率加以測得，該曲線係依照與基片中心之距離的函數加以繪製。依照下述公式，該斜率係等於溫度差異改變值除以溫度差異曲線50%中點上的距離的改變值。
T 2 -T 1
斜率=d2-d1
其中T2=0.75T最大值；T1=0.25T最大值；d2=在T1時與中心的距離；T最大值係等於最大的溫度差異。第十及十一圖所圖解的結果指出，內加熱區及外周加熱區之間的溫度梯度，至少部份地可基於內加熱電極及外周加熱電極之間的縫隙距離尺寸而加以調整。
溫度梯度也可藉由改變供應至內或外周加熱電極之電能而加以調整。第十二圖提供一基片表面上溫度差異的代表性圖式，其係與靜電夾頭總成所用基片中心之距離的函數，該靜電夾頭總成在供應至內加熱電極之電量改變之下，具有20mm的縫隙距離。如第十二圖所示，藉由在相鄰電極間固定住一縫隙，及只有改變供應至內電極的電量，該溫度梯度在1W/cm2時約8℃/cm，增加為3W/cm2時約13.5℃/cm。
雖然本發明的主題係已藉由相關具體的示範性實施例加以詳細描述，但可理解的是，一般熟於本項技藝的人士，在對於前述內容取得瞭解之後，能夠輕易地生產這類實施例的改變、變型或等價物。因此，本發明之揭示內容的範圍只是作為例子，而非作為限制，該主要的揭示內容並未排除包含本項技藝人士可輕易完成之這類本發明主題的改變、變型及/或等價物。
100‧‧‧靜電夾頭總成
200‧‧‧基座支承
220、240‧‧‧通道
222、242‧‧‧入口
224、244‧‧‧出口
300‧‧‧靜電夾頭
310‧‧‧夾具表面
312‧‧‧凸出的外周環
313‧‧‧高度
315‧‧‧凸粒
318‧‧‧凹槽
320‧‧‧夾具電極
325‧‧‧單一柱連接
330‧‧‧加熱電極
332‧‧‧外周加熱電極
334‧‧‧內加熱電極
335‧‧‧縫隙距離
335’‧‧‧縫隙距離
336‧‧‧加熱匯流排
336‧‧‧額外的加熱電極
337‧‧‧管路
338‧‧‧單一柱連接
400‧‧‧基片
對於一般熟習本項技藝人士而言之本發明完整及可致使實施的揭示內容，包含其最佳模式，係參照以下的圖式而敍說在說明書中，其中：
第一圖係一依照本發明示範性實施例之靜電夾頭總成的側視圖：
第二圖係一依照本發明示範性實施例之基座支承的側視圖：
第三圖係一依照本發明示範性實施例之靜電夾頭總成的側視圖：
第四圖係一依照本發明示範性實施例之靜電夾頭夾具表面的示意圖：
第五圖係一依照本發明示範性實施例之多層靜電夾頭的示意圖：
第六圖係一依照本發明示範性實施例之夾具電極之示範性樣式的平面視圖：
第七圖係一依照本發明示範性實施例之加熱電極之示範性樣式的平面視圖：
第八圖係一依照本發明示範性實施例之橫越基片表面之溫度曲線的代表示意圖；
第九圖係一依照本發明示範性實施例之加熱電極構形的示意圖，其中提供位在內加熱電極及外加熱電極之間的可移動介面；
第十圖係基片溫度差異的代表示意圖，其在各種縫隙距離下，依照與基片中心之距離的函數加以繪製；
第十一圖係基片溫度差異的另一代表示意圖，其在改變縫隙距離下，依照與基片中心之距離的函數加以繪製；及
第十二圖係基片溫度差異的代表示意圖，其在改變被施加到內電極之電量下，依照與基片中心之距離的函數加以繪製。
100．．．靜電夾頭總成
200．．．基座支承
220．．．通道
222、242．．．入口
224、244．．．出口
300．．．靜電夾頭
400．．．基片

Claims (14)

  1. 一種用於調整橫越一基片的表面的一溫度曲線的系統，其包含：一基座支承，其包含一適於提供一基座熱區的基座熱控制系統，該基座熱區界定一橫越該基座支承的表面的實質上均勻的溫度曲線，基於該基座熱控制系統的輸出該基座熱區具有熱特徵；一靜電夾頭，其係由該基座支承支持，該靜電夾頭包含一夾具電極及複數個加熱電極，該等加熱電極包含一內加熱電極及一由一縫隙距離隔離的外周加熱電極，該縫隙距離的尺寸即為多個經致能的加熱電極之間的隔離距離，基於該內加熱電極的輸出該內加熱電極界定一具有熱特徵的內加熱區，基於該外周加熱電極的輸出該外周加熱電極界定一具有熱特徵的外周加熱區；以及一控制系統，其適於藉由改變該基座熱控制系統、該內加熱電極、或該外周加熱電極之至少一者的輸出而調整橫越該基片的表面的該溫度曲線。
  2. 如申請專利範圍第1項所述的系統，其中該控制系統係適於藉由改變該基座熱控制系統、該內加熱電極、或該外周加熱電極之至少一者的輸出而調整介於該內加熱區與該外周加熱區之間的一溫度梯度。
  3. 如申請專利範圍第1項所述的系統，其中該靜電夾頭包含氧化鋁。
  4. 如申請專利範圍第1項所述的系統，其中該基座熱控制系統包含一流體流動通道用於循環一熱交換流體。
  5. 如申請專利範圍第1項所述的系統，其中該基座熱控制系統包含一內流體流動通道及一外周流體流動通道，該內流體流動通道及該外周流體流動通道係經控制而提供橫越該基座支承的表面的實質上均勻的該溫度曲線。
  6. 如申請專利範圍第1項所述的系統，其中該靜電夾頭具有一頂表面包含一凸出的外周密封環及複數個高度大約相同於該凸出的外周密 封環的高度的凸粒(mesas)。
  7. 如申請專利範圍第1項所述的系統，其中該靜電夾頭包含至少一個位在該內加熱電極與該外周加熱電極之間的額外的加熱電極，該控制系統係適於藉由致能該至少一個該額外的加熱電極而調整該內加熱電極與該外周加熱電極之間的該縫隙距離的尺寸。
  8. 如申請專利範圍第1項所述的系統，其中該控制系統係適於藉由改變該內加熱電極與該外周加熱電極之間的該縫隙距離的尺寸而調整介於該內加熱區與該外周加熱區之間的一溫度梯度。
  9. 如申請專利範圍第1項所述的系統，其中該縫隙距離具有一尺寸足以在該內加熱區與該外周加熱區之間產生一溫度梯度，當外周加熱區的溫度被維持在約28.5℃高於該內加熱區的溫度時該溫度梯度具有一至少約6℃/cm的數值。
  10. 一種用於在處理期間維持橫越一基片的表面的一溫度曲線的系統，該系統包含：一基座，其界定一橫越該基座的表面的實質上均勻的溫度曲線；一靜電夾頭，其包含一夾具電極及複數個加熱電極，該等加熱電極包含一界定一內加熱區的內加熱電極及一界定一外周加熱區的外周加熱電極；其中該內加熱電極和該外周加熱電極係由一縫隙距離隔離，該縫隙距離具有一尺寸足以在該外周加熱區與該內加熱區之間產生一溫度梯度，該縫隙距離的尺寸即為該內加熱電極與該外周加熱電極之間的距離，當外周加熱區的溫度被維持在約28.5℃高於該內加熱區的溫度時該溫度梯度係至少約6℃/cm。
  11. 如申請專利範圍第10項所述的系統，其中該縫隙距離的尺寸係約15mm~35mm。
  12. 一種利用前述任一項所述之系統徑向地調整橫越一基片的表面的 一溫度曲線的方法，該方法包含：將該基片安置在一包含一由一基座支持的靜電夾頭的靜電夾頭總成上，該靜電夾頭包含一夾具電極及一界定一內加熱區的內加熱電極及一界定一外周加熱區的外周加熱電極，該內加熱電極和該外周加熱電極係由一縫隙距離隔離；藉由智能該夾具電極而將該基片夾在該靜電夾頭總成上；以及藉由調整該內加熱電極與該外周加熱電極之間的一縫隙距離的尺寸而調整介於該內加熱區與該外周加熱區之間的一溫度梯度，該縫隙距離的尺寸即為多個經致能的加熱電極之間的隔離距離；其中該縫隙距離的尺寸係藉由選擇性地致能一位在該內加熱電極與該外周加熱電極之間的額外的加熱電極而被調整。
  13. 如申請專利範圍第12項所述的方法，其中該方法進一步包含藉由改變供應至該內加熱電極或該外周加熱電極的電力而調整介於該內加熱區與該外周加熱區之間的該溫度梯度。
  14. 如申請專利範圍第12項所述的方法，其中該方法進一步包含藉由調節流經該基座的熱轉移流體而調整介於該內加熱區與該外周加熱區之間的該溫度梯度。
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US8405005B2 (en) 2013-03-26
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KR101691044B1 (ko) 2016-12-29
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