TWI571682B - Display device - Google Patents

Display device Download PDF

Info

Publication number
TWI571682B
TWI571682B TW103137140A TW103137140A TWI571682B TW I571682 B TWI571682 B TW I571682B TW 103137140 A TW103137140 A TW 103137140A TW 103137140 A TW103137140 A TW 103137140A TW I571682 B TWI571682 B TW I571682B
Authority
TW
Taiwan
Prior art keywords
display device
layer
partition wall
substrate
width
Prior art date
Application number
TW103137140A
Other languages
Chinese (zh)
Other versions
TW201535028A (en
Inventor
陳宏昆
張鴻光
高毓謙
宋立偉
李芳錦
周協利
Original Assignee
群創光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 群創光電股份有限公司 filed Critical 群創光電股份有限公司
Priority to US14/656,414 priority Critical patent/US9632375B2/en
Priority to US14/656,363 priority patent/US9513514B2/en
Priority to US14/656,461 priority patent/US9507222B2/en
Publication of TW201535028A publication Critical patent/TW201535028A/en
Priority to US15/270,438 priority patent/US10324345B2/en
Priority to US15/297,651 priority patent/US9690145B2/en
Application granted granted Critical
Publication of TWI571682B publication Critical patent/TWI571682B/en
Priority to US16/401,413 priority patent/US10642118B2/en

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

顯示裝置 Display device

本發明係有關於顯示裝置,且特別係有關於一種具有間隔牆之顯示裝置。 The present invention relates to display devices, and more particularly to a display device having a partition wall.

隨著數位科技的發展,顯示裝置已被廣泛地應用在日常生活的各個層面中,例如其已廣泛應用於電視、筆記本、電腦、行動電話、智慧型手機等現代化資訊設備,且不斷朝著輕、薄、短小及時尚化方向發展。 With the development of digital technology, display devices have been widely used in various aspects of daily life, for example, they have been widely used in modern information equipment such as televisions, notebooks, computers, mobile phones, smart phones, etc., and are constantly moving toward light. , thin, short and fashion development.

顯示裝置一般包括顯示畫素區和非顯示區,且設於非顯示區之框膠必須與顯示畫素區間隔一定的距離,以防框膠接觸顯示畫素區之液晶材料造成顯示裝置之缺陷。然而,上述距離限制了顯示裝置之非顯示區之窄化,使顯示裝置無法更進一步輕、薄、短小。 The display device generally includes a display pixel area and a non-display area, and the sealant disposed in the non-display area must be spaced apart from the display pixel area by a certain distance to prevent the frame glue from contacting the liquid crystal material of the display pixel area to cause defects of the display device. . However, the above distance limits the narrowing of the non-display area of the display device, making the display device impossible to be lighter, thinner, and shorter.

因此,業界亟須一種可更進一步窄化非顯示區之顯示裝置。 Therefore, there is a need in the industry for a display device that can further narrow the non-display area.

本發明提供一種顯示裝置,包括:第一基板,包括顯示畫素區;第二基板,與第一基板相對設置;框膠(sealant),設於第一基板與第二基板之間,且位於顯示畫素區外側;及間隔牆(photo spacer wall),設於第一基板與第二基板之間且位於顯示 畫素區及框膠之間,其中間隔牆之第一側係靠近顯示畫素區,間隔牆之第二側係靠近框膠,且第一側之高度大於第二側之高度。 The present invention provides a display device comprising: a first substrate comprising a display pixel region; a second substrate disposed opposite the first substrate; a sealant disposed between the first substrate and the second substrate and located Displaying the outside of the pixel area; and a photo spacer wall disposed between the first substrate and the second substrate and located at the display Between the pixel area and the frame glue, the first side of the partition wall is close to the display pixel area, and the second side of the partition wall is close to the frame glue, and the height of the first side is greater than the height of the second side.

為讓本發明之特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the features and advantages of the present invention more comprehensible, the preferred embodiments of the present invention are described in detail below.

100‧‧‧顯示裝置 100‧‧‧ display device

101‧‧‧第一基板 101‧‧‧First substrate

102‧‧‧基板 102‧‧‧Substrate

103‧‧‧第二基板 103‧‧‧second substrate

104‧‧‧顯示畫素區 104‧‧‧ Displaying the pixel area

105‧‧‧非顯示區 105‧‧‧Non-display area

106‧‧‧驅動單元 106‧‧‧Drive unit

107‧‧‧閘極驅動電路 107‧‧‧ gate drive circuit

108‧‧‧走線區 108‧‧‧Drop area

108a‧‧‧第一線路區 108a‧‧‧First line area

108b‧‧‧第二線路區 108b‧‧‧second line area

109‧‧‧測試墊 109‧‧‧Test pad

110‧‧‧線路/訊號線組 110‧‧‧Line/Signal Line Group

110A‧‧‧線路 110A‧‧‧ lines

110B‧‧‧線路 110B‧‧‧ lines

110C‧‧‧第一區塊線路 110C‧‧‧First block line

110D‧‧‧第二區塊線路 110D‧‧‧Second block circuit

111‧‧‧閘極訊號輸出接點 111‧‧‧gate signal output contact

112‧‧‧第一導線 112‧‧‧First wire

113A‧‧‧區域 113A‧‧‧Area

113B‧‧‧區域 113B‧‧‧Area

114‧‧‧第二導線 114‧‧‧Second wire

115‧‧‧外部接腳連接區 115‧‧‧External pin connection area

116‧‧‧第一導電圈 116‧‧‧First conductive ring

118‧‧‧第二導電圈 118‧‧‧second conductive ring

120‧‧‧框膠 120‧‧‧Box glue

122‧‧‧外圍邊界 122‧‧‧ peripheral border

124‧‧‧預定切割道 124‧‧‧ Scheduled cutting road

126‧‧‧第一透明基板 126‧‧‧First transparent substrate

128‧‧‧遮光層 128‧‧‧ shading layer

130‧‧‧彩色濾光層 130‧‧‧Color filter layer

130A‧‧‧彩色濾光層 130A‧‧‧Color filter layer

130B‧‧‧彩色濾光層 130B‧‧‧Color filter layer

130C‧‧‧彩色濾光層 130C‧‧‧Color filter layer

130D‧‧‧第一彩色濾光層 130D‧‧‧First color filter layer

130E‧‧‧第二彩色濾光層 130E‧‧‧Second color filter layer

132‧‧‧平坦層 132‧‧‧flat layer

134‧‧‧第二透明基板 134‧‧‧Second transparent substrate

136‧‧‧絕緣層 136‧‧‧Insulation

138‧‧‧液晶材料 138‧‧‧Liquid crystal materials

140‧‧‧間隔牆 140‧‧‧ partition wall

142‧‧‧主間隔物 142‧‧‧Main spacer

144‧‧‧轉角區 144‧‧‧ corner area

146‧‧‧長條區 146‧‧‧Long strip area

148‧‧‧第一配向層 148‧‧‧First alignment layer

150‧‧‧第二配向層 150‧‧‧Second alignment layer

202‧‧‧第一導電區塊 202‧‧‧First conductive block

204‧‧‧第二導電區塊 204‧‧‧Second conductive block

205‧‧‧第一貫孔 205‧‧‧ first through hole

206‧‧‧介電層 206‧‧‧Dielectric layer

206A‧‧‧介電層 206A‧‧‧ dielectric layer

206B‧‧‧介電層 206B‧‧‧ dielectric layer

207‧‧‧第二貫孔 207‧‧‧second through hole

208‧‧‧保護層 208‧‧‧protection layer

209‧‧‧第三貫孔 209‧‧‧Through hole

210‧‧‧導電層 210‧‧‧ Conductive layer

210‧‧‧第四貫孔 210‧‧‧fourth hole

211‧‧‧連接層 211‧‧‧Connection layer

212‧‧‧平坦層 212‧‧‧flat layer

213‧‧‧第五貫孔 213‧‧‧5th through hole

300‧‧‧第一區 300‧‧‧First District

300A‧‧‧區塊 300A‧‧‧ Block

300B‧‧‧區塊 300B‧‧‧ Block

300Aa‧‧‧子區塊 300Aa‧‧‧ sub-block

300Ab‧‧‧子區塊 300Ab‧‧‧ sub-block

302‧‧‧第二區 302‧‧‧Second District

302A‧‧‧區塊 302A‧‧‧ Block

302B‧‧‧區塊 302B‧‧‧ Block

304‧‧‧主間隙 304‧‧‧Main gap

306‧‧‧第一間隙 306‧‧‧First gap

308‧‧‧區塊內間隙 308‧‧‧Inter-block gap

310‧‧‧線路內間隙 310‧‧‧Internal gap

312‧‧‧第二間隙 312‧‧‧Second gap

V1‧‧‧導孔 V1‧‧‧ Guide hole

V2‧‧‧導孔 V2‧‧‧ guide hole

V3‧‧‧導孔 V3‧‧‧ Guide hole

M‧‧‧導電層 M‧‧‧ conductive layer

M1‧‧‧第一導電層 M1‧‧‧ first conductive layer

M2‧‧‧第二導電層 M2‧‧‧Second conductive layer

Da‧‧‧距離 Da‧‧‧Distance

Dc‧‧‧距離 Dc‧‧‧ distance

D1‧‧‧距離 D1‧‧‧ distance

D2‧‧‧距離 D2‧‧‧ distance

D3‧‧‧距離 D3‧‧‧ distance

D4‧‧‧距離 D4‧‧‧ distance

D5‧‧‧距離 D5‧‧‧ distance

D6‧‧‧距離 D6‧‧‧Distance

D7‧‧‧距離 D7‧‧‧ distance

D8‧‧‧距離 D8‧‧‧ distance

W‧‧‧寬度 W‧‧‧Width

W1‧‧‧第一導線之線寬 W1‧‧‧Line width of the first wire

W2‧‧‧第二導線之線寬 Line width of W2‧‧‧ second wire

W3‧‧‧第一導線及第二導線重疊的寬度 W3‧‧‧The width of the overlap of the first and second conductors

W4‧‧‧寬度 W4‧‧‧Width

W5‧‧‧寬度 W5‧‧‧Width

W6‧‧‧寬度 W6‧‧‧Width

W7‧‧‧寬度 W7‧‧‧Width

W8‧‧‧寬度 W8‧‧‧Width

W9‧‧‧寬度 W9‧‧‧Width

X‧‧‧第一軸 X‧‧‧ first axis

Y‧‧‧第二軸 Y‧‧‧Second axis

G1‧‧‧第一間隙 G1‧‧‧ first gap

G2‧‧‧第二間隙 G2‧‧‧Second gap

S1‧‧‧第一側 S1‧‧‧ first side

S2‧‧‧第二側 S2‧‧‧ second side

S3‧‧‧交界 S3‧‧‧ junction

H1‧‧‧高度 H1‧‧‧ Height

H2‧‧‧高度 H2‧‧‧ Height

H3‧‧‧高度 H3‧‧‧ Height

H4‧‧‧高度 H4‧‧‧ Height

H5‧‧‧高度 H5‧‧‧ height

H6‧‧‧距離 H6‧‧‧ distance

H7‧‧‧距離 H7‧‧‧ distance

H8‧‧‧高度 H8‧‧‧ Height

H9‧‧‧距離 H9‧‧‧ distance

H10‧‧‧距離 H10‧‧‧ distance

T1‧‧‧厚度 T1‧‧‧ thickness

T2‧‧‧厚度 T2‧‧‧ thickness

T3‧‧‧厚度 T3‧‧‧ thickness

T4‧‧‧厚度 T4‧‧‧ thickness

L‧‧‧長度 L‧‧‧ length

L1‧‧‧第一導電區塊之長度 L1‧‧‧The length of the first conductive block

L2‧‧‧第二導電區塊之長度 L2‧‧‧ Length of the second conductive block

3-3‧‧‧線段 3-3‧‧‧ segments

A-A’‧‧‧切線 A-A’‧‧‧ tangent

B-B’‧‧‧切線 B-B’‧‧‧ tangent

C-C’‧‧‧切線 C-C’‧‧‧ tangent

1B-1B‧‧‧線段 1B-1B‧‧‧ line segment

第1A圖係本發明實施例之上視圖。 Fig. 1A is a top view of an embodiment of the present invention.

第1B圖係沿著第1A圖之線段1B-1B所繪製之剖面圖。 Fig. 1B is a cross-sectional view taken along line 1B-1B of Fig. 1A.

第2圖係本發明另一實施例之上視圖。 Figure 2 is a top view of another embodiment of the present invention.

第3圖係本發明另一實施例之剖面圖。 Figure 3 is a cross-sectional view showing another embodiment of the present invention.

第4圖係本發明另一實施例之剖面圖。 Figure 4 is a cross-sectional view showing another embodiment of the present invention.

第5圖係本發明另一實施例之剖面圖。 Figure 5 is a cross-sectional view showing another embodiment of the present invention.

第6A圖係本發明實施例之顯示裝置之上視圖。 Fig. 6A is a top view of the display device of the embodiment of the present invention.

第6B圖係第6A圖之顯示裝置之部分放大圖。 Fig. 6B is a partially enlarged view of the display device of Fig. 6A.

第7圖係本發明實施例之測試墊之上視圖。 Figure 7 is a top view of the test pad of the embodiment of the present invention.

第8A-8B圖係第7圖之測試墊沿著線段3-3之剖面圖。 Figures 8A-8B are cross-sectional views of the test pad of Figure 7 taken along line 3-3.

第9圖係本發明另一實施例之測試墊之上視圖。 Figure 9 is a top plan view of a test pad of another embodiment of the present invention.

第10圖係本發明另一實施例之測試墊之上視圖。 Figure 10 is a top plan view of a test pad of another embodiment of the present invention.

第11圖係本發明另一實施例之測試墊之上視圖。 Figure 11 is a top plan view of a test pad of another embodiment of the present invention.

第12圖係本發明另一實施例之測試墊之上視圖。 Figure 12 is a top plan view of a test pad of another embodiment of the present invention.

第13圖係本發明一實施例所述之顯示裝置的上視圖。 Figure 13 is a top plan view of a display device according to an embodiment of the present invention.

第14A圖係顯示第13圖所述之顯示裝置沿切線A-A’的剖面結構示意圖。 Fig. 14A is a schematic view showing the cross-sectional structure of the display device shown in Fig. 13 along the tangential line A-A'.

第14B及14C圖係本發明其他實施例所述之顯示裝置沿切線A-A’的剖面結構示意圖。 14B and 14C are schematic cross-sectional views of a display device according to another embodiment of the present invention taken along a tangential line A-A'.

第15圖係本發明另一實施例所述之顯示裝置的上視圖。 Figure 15 is a top plan view of a display device according to another embodiment of the present invention.

第16A圖係顯示第15圖所述之顯示裝置沿切線B-B’的剖面結構示意圖。 Fig. 16A is a view showing the cross-sectional structure of the display device shown in Fig. 15 along the tangential line B-B'.

第16B及16C圖係本發明其他實施例所述之顯示裝置其沿切線B-B’的剖面結構示意圖。 16B and 16C are schematic cross-sectional views of the display device according to another embodiment of the present invention taken along a tangential line B-B'.

第17圖係本發明又一實施例所述之顯示裝置的上視圖。 Figure 17 is a top plan view of a display device according to still another embodiment of the present invention.

第18圖係顯示第17圖所述之顯示裝置沿切線C-C’的剖面結構示意圖。 Fig. 18 is a schematic cross-sectional view showing the display device shown in Fig. 17 along the tangential line C-C'.

第19及20圖係本發明其他實施例所述之顯示裝置母板的上視圖。 19 and 20 are top views of a mother panel of a display device according to another embodiment of the present invention.

以下針對本發明之顯示裝置作詳細說明。應了解的是,以下之敘述提供許多不同的實施例或例子,用以實施本發明之不同樣態。以下所述特定的元件及排列方式儘為簡單描述本發明。當然,這些僅用以舉例而非本發明之限定。此外,在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本發明,不代表所討論之不同實施例及/或結構之間具有任何 關連性。再者,當述及一第一材料層位於一第二材料層上或之上時,包括第一材料層與第二材料層直接接觸之情形。或者,亦可能間隔有一或更多其它材料層之情形,在此情形中,第一材料層與第二材料層之間可能不直接接觸。 The display device of the present invention will be described in detail below. It will be appreciated that the following description provides many different embodiments or examples for implementing the invention. The specific elements and arrangements described below are intended to provide a brief description of the invention. Of course, these are by way of example only and not as a limitation of the invention. Moreover, repeated numbers or labels may be used in different embodiments. These repetitions are merely for the purpose of simplicity and clarity of the invention and are not intended to represent any of the various embodiments and/or structures discussed. Relevance. Furthermore, when a first material layer is on or above a second material layer, the first material layer is in direct contact with the second material layer. Alternatively, it is also possible to have one or more layers of other materials interposed, in which case there may be no direct contact between the first layer of material and the second layer of material.

必需了解的是,為特別描述或圖示之元件可以此技 術人士所熟知之各種形式存在。此外,當某層在其它層或基板「上」時,有可能是指「直接」在其它層或基板上,或指某層在其它層或基板上,或指其它層或基板之間夾設其它層。 It is important to understand that this feature can be used for components that are specifically described or illustrated. Various forms are known to the practitioner. In addition, when a layer is "on" another layer or substrate, it may mean "directly" on another layer or substrate, or a layer on another layer or substrate, or between other layers or substrates. Other layers.

此外,實施例中可能使用相對性的用語,例如「較 低」或「底部」及「較高」或「頂部」,以描述圖示的一個元件對於另一元件的相對關係。能理解的是,如果將圖示的裝置翻轉使其上下顛倒,則所敘述在「較低」側的元件將會成為在「較高」側的元件。 In addition, relative terms may be used in the examples, such as "low" or "bottom" and "higher" or "top" to describe the relative relationship of one component to another. It will be understood that if the illustrated device is flipped upside down, the component described on the "lower" side will be the component on the "higher" side.

在此,「約」、「大約」之用語通常表示在一給定值或 範圍的20%之內,較佳是10%之內,且更佳是5%之內。在此給定的數量為大約的數量,意即在沒有特定說明的情況下,仍可隱含「約」、「大約」之含義。 Here, the terms "about" and "about" usually mean a given value or Within 20% of the range, preferably within 10%, and more preferably within 5%. The quantity given here is an approximate quantity, meaning that the meaning of "about" or "about" may be implied without specific explanation.

本發明實施例係利用一設於顯示畫素區及框膠之間 的間隔牆(photo spacer wall)以防止框膠接觸顯示畫素區之液晶材料,使框膠與顯示畫素區之間的距離可更進一步的縮短以窄化顯示裝置之非顯示區。 The embodiment of the invention utilizes a layer between the display pixel area and the sealant. The photo spacer wall prevents the frame glue from contacting the liquid crystal material of the display pixel area, so that the distance between the sealant and the display pixel area can be further shortened to narrow the non-display area of the display device.

首先,參見第1A圖及第1B圖。第1A圖係本發明實施 例之上視圖,而第1B圖係沿著第1A圖之線段1B-1B所繪製之剖面圖。如第1A圖所示,顯示裝置100包括第一基板101以及與此第一 基板101相對設置第二基板103。此外,如第1A圖及第1B圖所示,此顯示裝置100包括顯示畫素區104及相鄰顯示畫素區之非顯示區105。易言之,上述第一基板101以及第二基板103皆可分為顯示畫素區104及相鄰顯示畫素區之非顯示區105。此外,此非顯示區105包括一外部接腳壓合區(Out Lead Bonding,OLB)115,如第1A圖所示。 First, see Figures 1A and 1B. Figure 1A is an implementation of the present invention The upper view is taken as an example, and the 1B figure is a cross-sectional view taken along line 1B-1B of Fig. 1A. As shown in FIG. 1A, the display device 100 includes a first substrate 101 and is first The substrate 101 is oppositely disposed to the second substrate 103. Further, as shown in FIGS. 1A and 1B, the display device 100 includes a non-display area 105 that displays a pixel area 104 and an adjacent display pixel area. In other words, the first substrate 101 and the second substrate 103 can be divided into a non-display area 105 that displays a pixel area 104 and an adjacent display pixel area. In addition, the non-display area 105 includes an external lead leading area (OLB) 115, as shown in FIG. 1A.

上述顯示裝置100可為液晶顯示器,例如為薄膜電晶 體液晶顯示器。或者,此液晶顯示器可為扭轉向列(Twisted Nematic,TN)型液晶顯示器、超扭轉向列(Super Twisted Nematic,STN)型液晶顯示器、雙層超扭轉向列(Double layer Super Twisted Nematic,DSTN)型液晶顯示器、垂直配向(Vertical Alignment,VA)型液晶顯示器、水平電場效應(In-Plane Switching,IPS)型液晶顯示器、膽固醇(Cholesteric)型液晶顯示器、藍相(Blue Phase)型液晶顯示器或其它任何適合之液晶顯示器。 The display device 100 may be a liquid crystal display, such as a thin film electro-crystal Body liquid crystal display. Alternatively, the liquid crystal display can be a Twisted Nematic (TN) type liquid crystal display, a Super Twisted Nematic (STN) type liquid crystal display, or a Double Layer Super Twisted Nematic (DSTN). Liquid crystal display, Vertical Alignment (VA) type liquid crystal display, In-Plane Switching (IPS) type liquid crystal display, Cholesteric type liquid crystal display, Blue Phase type liquid crystal display or the like Any suitable LCD monitor.

參見第1B圖,上述第一基板101包括一第一透明基板 126、設於此第一透明基板126上之遮光層128、以及設於此遮光層128之彩色濾光層130。此外,第一基板101可更包括覆蓋此彩色濾光層130以及部分遮光層128之平坦層132。 Referring to FIG. 1B, the first substrate 101 includes a first transparent substrate. 126. The light shielding layer 128 disposed on the first transparent substrate 126 and the color filter layer 130 disposed on the light shielding layer 128. In addition, the first substrate 101 may further include a flat layer 132 covering the color filter layer 130 and a portion of the light shielding layer 128.

上述第一透明基板126例如可為玻璃基板、陶瓷基 板、塑膠基板或其它任何適合之透明基板。而上述遮光層128係用以遮蔽非顯示區105以及顯示畫素區104中的畫素以外之元件。此外,遮光層128之材料可為黑色光阻、黑色印刷油墨、黑色樹脂或其它任何適合之遮光材料與顏色。而上述彩色濾光層130可包括設 於顯示畫素區104之彩色濾光層130A、130B及130C以及設於非顯示區105之彩色濾光層130D。且此彩色濾光層130A、130B及130C可各自獨立地為紅色彩色濾光層、綠色彩色濾光層、藍色彩色濾光層、或其它任何適合之彩色濾光層。此外,上述平坦層132之材料可為有機矽氧化合物、光阻,或無機材質如氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、氧化鉿、或上述材質之多層結構。 The first transparent substrate 126 may be, for example, a glass substrate or a ceramic substrate. Board, plastic substrate or any other suitable transparent substrate. The light shielding layer 128 is used to shield the non-display area 105 and the elements other than the pixels in the pixel area 104. In addition, the material of the light shielding layer 128 may be black photoresist, black printing ink, black resin or any other suitable light shielding material and color. The color filter layer 130 may include The color filter layers 130A, 130B, and 130C of the pixel region 104 and the color filter layer 130D disposed in the non-display region 105 are displayed. The color filter layers 130A, 130B, and 130C can each independently be a red color filter layer, a green color filter layer, a blue color filter layer, or any other suitable color filter layer. In addition, the material of the flat layer 132 may be an organic germanium oxide compound, a photoresist, or an inorganic material such as tantalum nitride, hafnium oxide, tantalum oxynitride, tantalum carbide, aluminum oxide, tantalum oxide, or a multilayer structure of the above materials.

繼續參見第1B圖,上述第二基板103包括一第二透明 基板134,其材料可同上述第一透明基板126之材料,且第一透明基板126與第二透明基板134之材料可以相同或不同。此外,此第二透明基板134之中或之上設有用以控制畫素之電晶體(未繪示),例如設有薄膜電晶體。第二基板103可更包括覆蓋第二透明基板134以及上述電晶體之絕緣層136。此絕緣層136係用以將第二基板103與設於第一基板101及第二基板103之間的元件電性絕緣。此絕緣層136之材料可為氧化矽、氮化矽、氮氧化矽、上述之組合、或其它任何適合之材料。 Continuing to refer to FIG. 1B, the second substrate 103 includes a second transparent The substrate 134 may be made of the same material as the first transparent substrate 126, and the materials of the first transparent substrate 126 and the second transparent substrate 134 may be the same or different. In addition, a transistor (not shown) for controlling pixels is provided in or on the second transparent substrate 134, for example, a thin film transistor is provided. The second substrate 103 may further include an insulating layer 136 covering the second transparent substrate 134 and the above transistor. The insulating layer 136 is used to electrically insulate the second substrate 103 from the elements disposed between the first substrate 101 and the second substrate 103. The material of the insulating layer 136 may be tantalum oxide, tantalum nitride, niobium oxynitride, a combination of the above, or any other suitable material.

繼續參見第1A圖及第1B圖,顯示裝置100更包括設於 第一基板101與第二基板103之間的框膠120(sealant)以及液晶材料138。此框膠120係用以密封住第一基板101與第二基板103之間的液晶材料138。此框膠120可為絕緣之透明樹脂或其它任何適合之框膠材料,而此液晶材料138可為向列型液晶(nematic)、層列型液晶(smectic)、膽固醇液晶(cholesteric)、藍相液晶(Blue phase)或其它任何適合之液晶材料。 Continuing to refer to FIGS. 1A and 1B, the display device 100 further includes A sealant 120 between the first substrate 101 and the second substrate 103 and a liquid crystal material 138. The sealant 120 is used to seal the liquid crystal material 138 between the first substrate 101 and the second substrate 103. The sealant 120 may be an insulating transparent resin or any other suitable sealant material, and the liquid crystal material 138 may be nematic, smectic, cholesteric, blue phase. Blue phase or any other suitable liquid crystal material.

如第1A圖及第1B圖所示,此框膠120係位於顯示畫素 區104外側,易言之,此框膠120係位於非顯示區105中。在一些實 施例中,框膠120可圍繞顯示畫素區104。此外,框膠120之寬度W4為約200μm至900μm,例如為約500μm至800μm。應注意的是,若框膠120之寬度W4太大,例如大於約900μm,則顯示裝置100之非顯示區105會過寬,無法使顯示裝置100更為輕、薄、短小。 然而,若框膠120之寬度W4太小,例如小於約200μm,則部分框膠120有可能會破裂而無法有效密封住液晶材料138。 As shown in Figures 1A and 1B, the sealant 120 is located on the display pixel. Outside of the area 104, it is easy to say that the sealant 120 is located in the non-display area 105. In some real In an embodiment, the sealant 120 can surround the display pixel region 104. Further, the sealant 120 has a width W4 of about 200 μm to 900 μm, for example, about 500 μm to 800 μm. It should be noted that if the width W4 of the sealant 120 is too large, for example, greater than about 900 μm, the non-display area 105 of the display device 100 may be too wide to make the display device 100 lighter, thinner, and shorter. However, if the width W4 of the sealant 120 is too small, for example, less than about 200 μm, the portion of the sealant 120 may be broken to effectively seal the liquid crystal material 138.

繼續參見第1A圖及第1B圖,顯示裝置100更包括設於 第一基板101與第二基板103之間的間隔牆140(photo spacer wall),且此間隔牆140係位於顯示畫素區104及框膠120之間,以進一步防止框膠120接觸顯示畫素區104之液晶材料138。此外,間隔牆140具有靠近顯示畫素區104之第一側S1以及靠近框膠120之第二側S2,且此第一側S1之高度H1大於第二側S2之高度H2。例如,在圖示中,間隔牆140的高度由S1側(靠近顯示區104側)的H1逐漸往S2側(靠近框膠120側)降低至H2。應注意的是,雖然在第1A圖及第1B圖所示之實施例中,間隔牆140係位於第一基板101之平坦層132上,然而,在其它實施例中,間隔牆140亦可位於第二基板103上,此部分將於後文詳細說明。此外,雖然在第1A圖所示之實施例中,間隔牆140係完全環繞顯示畫素區104。然而,技藝人士應可知間隔牆140不僅一圈亦可為多圈,或是僅部分環繞顯示畫素區104,因此,本發明之保護範圍並不侷限於第1A圖所示之實施例。 Continuing to refer to FIGS. 1A and 1B, the display device 100 further includes A spacer spacer 140 between the first substrate 101 and the second substrate 103, and the spacer 140 is located between the display pixel region 104 and the sealant 120 to further prevent the sealant 120 from contacting the display pixel. Liquid crystal material 138 of region 104. In addition, the partition wall 140 has a first side S1 adjacent to the display pixel area 104 and a second side S2 adjacent to the sealant 120, and the height H1 of the first side S1 is greater than the height H2 of the second side S2. For example, in the illustration, the height of the partition wall 140 is gradually lowered from the H1 on the S1 side (near the display area 104 side) to the S2 side (near the sealant 120 side) to H2. It should be noted that, in the embodiment shown in FIGS. 1A and 1B, the partition wall 140 is located on the flat layer 132 of the first substrate 101. However, in other embodiments, the partition wall 140 may also be located. On the second substrate 103, this portion will be described in detail later. Further, although in the embodiment shown in FIG. 1A, the partition wall 140 completely surrounds the display pixel area 104. However, the skilled person will appreciate that the partition wall 140 may be multi-turned or not only partially surrounded by the display pixel area 104. Therefore, the scope of protection of the present invention is not limited to the embodiment shown in FIG.

此外,間隔牆140之材料可包括光阻,例如正光阻或 負光阻。間隔牆140可藉由微影或微影蝕刻製程形成。在一實施例中,上述微影製程包括光阻圖案化,此光阻圖案化更包括光阻塗 佈、軟烤、光罩對準、曝光圖案、後曝烤(post-exposure baking)、光阻顯影及硬烤等製程步驟。而上述蝕刻步驟可包括反應離子蝕刻(reactive ion etch,RIE)、電漿蝕刻或其它合適的蝕刻步驟。 In addition, the material of the partition wall 140 may include a photoresist such as a positive photoresist or Negative photoresist. The spacer 140 can be formed by a lithography or lithography process. In one embodiment, the lithography process includes photoresist patterning, and the photoresist patterning further includes photoresist coating. Process steps such as cloth, soft bake, reticle alignment, exposure pattern, post-exposure baking, photoresist development, and hard bake. The etching step may include reactive ion etch (RIE), plasma etching, or other suitable etching step.

繼續參見第1B圖,間隔牆140(或後續設於間隔牆140 之頂面上的第一配向層148)並未直接接觸第二基板103,故間隔牆140(或後續設於間隔牆140之頂面上的第一配向層148)與第二基板103間具有一第一間隙G1,且此第一間隙G1之高度H5可為約0.1μm至1.5μm,例如為約0.3μm至0.8μm。第一間隙G1之高度H5係定義為第二配向層150至間隔牆140之頂面(或後續設於間隔牆140之頂面上的第一配向層148)的最大距離H6及最小距離H7之平均值(亦即H5=(H6+H7)/2)。此外,框膠120可直接接觸間隔牆140,且部分框膠120更可自第二側S2向第一側S1延伸之一距離D8,此距離D8可為間隔牆140之寬度W5的約20%-90%,例如約40%-70%。應注意的是,若距離D8過大,例如大於約間隔牆140之寬度W5的90%,則會使框膠120接觸污染顯示畫素區104之液晶材料138而造成缺陷之機率增加,使製程良率下降。此外,若第一間隙G1之高度H5過大,例如大於約1.5μm,則間隔牆140無法有效防止框膠120經由第一間隙G1延伸進入顯示畫素區104,且間隔牆140與後續之主間隔物142之高度差會過大或使框膠120接觸而污染顯示畫素區104內之液晶材料138,會使顯示裝置100產生框形顯像不均(frame mura)等顯像不均之問題。然而,若第一間隙G1之高度H5過小,例如小於約0.1μm,則間隔牆140之頂面會過於靠近第二基板103,使延伸進入第一間隙G1之框膠120可能會將第二基板103推離第一基板101,會使顯示裝置100產生間隙顯像不均(gap mura)等顯像之問題,造成製程良率下降。 Continuing to refer to FIG. 1B, spacer wall 140 (or subsequent to spacer wall 140) The first alignment layer 148 on the top surface does not directly contact the second substrate 103, so the partition wall 140 (or the first alignment layer 148 disposed on the top surface of the partition wall 140) and the second substrate 103 have A first gap G1, and the height H5 of the first gap G1 may be about 0.1 μm to 1.5 μm, for example, about 0.3 μm to 0.8 μm. The height H5 of the first gap G1 is defined as the maximum distance H6 and the minimum distance H7 of the top surface of the second alignment layer 150 to the partition wall 140 (or the first alignment layer 148 disposed on the top surface of the partition wall 140). Average (ie H5=(H6+H7)/2). In addition, the sealant 120 can directly contact the partition wall 140, and a portion of the sealant 120 can extend from the second side S2 to the first side S1 by a distance D8, which can be about 20% of the width W5 of the partition wall 140. -90%, for example about 40% - 70%. It should be noted that if the distance D8 is too large, for example, greater than about 90% of the width W5 of the partition wall 140, the sealant 120 may be exposed to the liquid crystal material 138 contaminating the display pixel region 104, thereby increasing the probability of defects and making the process good. The rate drops. In addition, if the height H5 of the first gap G1 is too large, for example, greater than about 1.5 μm, the partition wall 140 cannot effectively prevent the sealant 120 from extending into the display pixel area 104 via the first gap G1, and the partition wall 140 is separated from the subsequent main space. If the height difference of the object 142 is too large or the sealant 120 is in contact to contaminate the liquid crystal material 138 in the display pixel region 104, the display device 100 may cause a problem of uneven display such as frame mura. However, if the height H5 of the first gap G1 is too small, for example, less than about 0.1 μm, the top surface of the partition wall 140 may be too close to the second substrate 103, so that the sealant 120 extending into the first gap G1 may be the second substrate. Pushing away from the first substrate 101 causes the display device 100 to produce gap imaging unevenness (gap) Mura) and other imaging problems, resulting in a decline in process yield.

由於上述間隔牆140可防止框膠120接觸顯示畫素區 104之液晶材料138,故框膠120與顯示畫素區104之間的距離可更進一步的縮短以窄化顯示裝置100之非顯示區105,使顯示裝置100更為輕、薄、短小。此外,由於框膠120之第一側S1之高度H1大於第二側S2之高度H2,故即使框膠120如前文所述延伸進入間隔牆140與第二基板103之間的第一間隙G1,較高的第二側S2之高度H2亦可防止框膠120經由第一間隙G1延伸進入顯示畫素區104,故可進一步防止框膠120接觸顯示畫素區104之液晶材料138造成顯示裝置100之缺陷。如第1B圖所示,在不考慮框膠120延伸入第一間隙G1的情況下,上述框膠120與顯示畫素區104之間的距離係為間隔牆140之寬度W5、後續位於間隔牆140之兩側S1、S2之第一配向層148的厚度T1及間隔牆140之第一側S1至顯示畫素區104之距離D7加總所得之總距離(亦即W5+2xT1+D7)。 Since the partition wall 140 prevents the sealant 120 from contacting the display pixel area The liquid crystal material 138 of 104, so that the distance between the sealant 120 and the display pixel area 104 can be further shortened to narrow the non-display area 105 of the display device 100, making the display device 100 lighter, thinner, and shorter. In addition, since the height H1 of the first side S1 of the sealant 120 is greater than the height H2 of the second side S2, even if the sealant 120 extends into the first gap G1 between the partition wall 140 and the second substrate 103 as described above, The height H2 of the second side S2 can also prevent the sealant 120 from extending into the display pixel region 104 via the first gap G1. Therefore, the sealant 120 can be further prevented from contacting the liquid crystal material 138 of the display pixel region 104 to cause the display device 100. Defects. As shown in FIG. 1B, in the case where the sealant 120 is not inserted into the first gap G1, the distance between the sealant 120 and the display pixel region 104 is the width W5 of the partition wall 140, and is subsequently located in the partition wall. The thickness T1 of the first alignment layer 148 on both sides S1 of S1 and the distance D7 from the first side S1 of the partition wall 140 to the display pixel area 104 add up the total distance (ie, W5+2xT1+D7).

上述間隔牆140之第一側S1的高度H1與第二側S2的高度H2的差值可為約0.01μm至0.3μm,例如為約0.05μm至0.1μm。應注意的是,若第一側S1與第二側S2之差值太大,例如大於約0.3μm,則表示第二側S2的高度H2會過低,會使間隔牆140無法有效防止框膠120接觸顯示畫素區104之液晶材料138。然而,若第一側S1與第二側S2之差值太小,例如小於約0.01μm,則間隔牆140無法有效利用第一側S1與第二側S2之高度差來防止框膠120經由第一間隙G1延伸進入顯示畫素區104。 The difference between the height H1 of the first side S1 of the partition wall 140 and the height H2 of the second side S2 may be about 0.01 μm to 0.3 μm, for example, about 0.05 μm to 0.1 μm. It should be noted that if the difference between the first side S1 and the second side S2 is too large, for example, greater than about 0.3 μm, it means that the height H2 of the second side S2 is too low, so that the partition wall 140 cannot effectively prevent the sealant. 120 contacts the liquid crystal material 138 of the pixel region 104. However, if the difference between the first side S1 and the second side S2 is too small, for example, less than about 0.01 μm, the partition wall 140 cannot effectively utilize the height difference between the first side S1 and the second side S2 to prevent the sealant 120 from passing through the first A gap G1 extends into the display pixel area 104.

繼續參見第1B圖,間隔牆140之寬度W5為約10μm至200μm,例如為約60μm至110μm。應注意的是,若間隔牆140之寬 度W5太寬,例如寬於約200μm,則顯示裝置100之非顯示區105會過寬,無法使顯示裝置100更為輕、薄、短小。然而,若間隔牆140之寬度W5太窄,例如窄於約10μm,則間隔牆140無法有效防止框膠120接觸顯示畫素區104之液晶材料138。 Continuing to refer to FIG. 1B, the partition wall 140 has a width W5 of about 10 μm to 200 μm, for example, about 60 μm to 110 μm. It should be noted that if the partition wall 140 is wide If the degree W5 is too wide, for example, wider than about 200 μm, the non-display area 105 of the display device 100 may be too wide to make the display device 100 lighter, thinner, and shorter. However, if the width W5 of the partition wall 140 is too narrow, for example, narrower than about 10 μm, the partition wall 140 cannot effectively prevent the sealant 120 from contacting the liquid crystal material 138 of the display pixel region 104.

此外,間隔牆140之第一側S1至顯示畫素區104之距 離D7為20μm至200μm,例如為約50μm至100μm。應注意的是,若此距離D7過寬,例如寬於約200μm,則顯示裝置100之非顯示區105會過寬,無法使顯示裝置100更為輕、薄、短小。然而,若此距離D7過短,例如小於約20μm,則會使框膠120接觸顯示畫素區104之液晶材料138而造成缺陷之機率增加,使製程良率下降。 In addition, the distance from the first side S1 of the partition wall 140 to the display pixel area 104 From D7 is from 20 μm to 200 μm, for example from about 50 μm to 100 μm. It should be noted that if the distance D7 is too wide, for example, wider than about 200 μm, the non-display area 105 of the display device 100 may be too wide to make the display device 100 lighter, thinner, and shorter. However, if the distance D7 is too short, for example, less than about 20 μm, the sealant 120 is brought into contact with the liquid crystal material 138 of the pixel region 104 to cause an increase in the probability of defects, resulting in a decrease in process yield.

此外,間隔牆140之高度H3可藉由改變間隔牆140之 第一側S1至顯示畫素區104之距離D7來調整。詳細而言,若距離D7越小,則間隔牆140之流平效應(reflow effect)越小,可允許間隔牆140有較高之高度。反之,若距離D7越大,則間隔牆140之流平效應越大,可允許間隔牆140有較低之高度。因此,可藉由調整距離D7來使主間隔物142與間隔牆140之高度差(亦即H4-H3)介於後文所述之較佳的範圍中(亦即約0.1μm至1.5μm)。 In addition, the height H3 of the partition wall 140 can be changed by changing the partition wall 140. The distance from the first side S1 to the display pixel area 104 is adjusted by D7. In detail, if the distance D7 is smaller, the smaller the reflow effect of the partition wall 140, the partition wall 140 can be allowed to have a higher height. Conversely, if the distance D7 is larger, the leveling effect of the partition wall 140 is larger, and the partition wall 140 can be allowed to have a lower height. Therefore, the height difference (i.e., H4-H3) between the main spacer 142 and the partition wall 140 can be made to be in a preferred range (i.e., about 0.1 μm to 1.5 μm) by adjusting the distance D7. .

繼續參見第1B圖,顯示裝置100更包括位於第一基板 101與第二基板103之間的主間隔物142(main photo spacer),且此主間隔物142係設於顯示畫素區104內。主間隔物142可與間隔牆140在同一道微影或微影蝕刻製程定義而成,然而,主間隔物142亦可藉由另一道微影或微影蝕刻製程形成。 Continuing to refer to FIG. 1B, the display device 100 further includes a first substrate. A main photo spacer 142 between the 101 and the second substrate 103, and the main spacer 142 is disposed in the display pixel area 104. The main spacers 142 may be defined in the same lithography or lithography process as the spacers 140. However, the main spacers 142 may also be formed by another lithography or lithography process.

此外,此主間隔物142之高度H4高於間隔牆140之高度H3。在上述中,間隔牆140之高度H3係定義為間隔牆140之第一 側S1的高度H1與第二側S2的高度H2之平均值(亦即H3=(H1+H2)/2)。在一些實施例中,主間隔物142之高度H4高於間隔牆140之高度H3約0.1μm至1.5μm,例如為約0.3μm至0.8μm。應注意的是,若主間隔物142與間隔牆140之高度差過大,例如大於約1.5μm,則顯示裝置100會產生框形顯像不均(frame mura)等顯像不均之問題。然而,若主間隔物142與間隔牆140之高度差過小,例如小於約0.1μm,則間隔牆140之頂面會過於靠近第二基板103,使延伸進入第一間隙G1之框膠120可能會將第二基板103推離第一基板101,會使顯示裝置100產生間隙顯像不均(gap mura)等顯像之問題,造成製程良率下降。 Further, the height H4 of the main spacer 142 is higher than the height H3 of the partition wall 140. In the above, the height H3 of the partition wall 140 is defined as the first of the partition walls 140. The average of the height H1 of the side S1 and the height H2 of the second side S2 (i.e., H3 = (H1 + H2)/2). In some embodiments, the height H4 of the main spacer 142 is higher than the height H3 of the partition wall 140 by about 0.1 μm to 1.5 μm, for example, about 0.3 μm to 0.8 μm. It should be noted that if the height difference between the main spacer 142 and the partition wall 140 is too large, for example, greater than about 1.5 μm, the display device 100 may cause a problem of uneven imaging such as frame mura. However, if the height difference between the main spacer 142 and the partition wall 140 is too small, for example, less than about 0.1 μm, the top surface of the partition wall 140 may be too close to the second substrate 103, so that the sealant 120 extending into the first gap G1 may be Pushing the second substrate 103 away from the first substrate 101 causes the display device 100 to have a problem of development such as gap mura, resulting in a decrease in process yield.

接著回到第1A圖,間隔牆140包括轉角區144以及長 條區146,且轉角區144之寬度W6與長條區146之寬度W7不同。例如,在第1A圖所示之實施例中,轉角區144之寬度W6大於長條區146之寬度W7。 Returning to FIG. 1A, the partition wall 140 includes a corner area 144 and a length. Strip 146, and width W6 of corner zone 144 is different from width W7 of strip zone 146. For example, in the embodiment illustrated in FIG. 1A, the width W6 of the corner region 144 is greater than the width W7 of the strip region 146.

然而,轉角區之寬度亦可小於長條區之寬度。例如, 第2圖繪示本發明之另一實施例,與前述第1A-4圖所示之實施例的差異主要在於轉角區144之寬度W6小於長條區146之寬度W7。 此外,此技術領域中具有通常知識者可知轉角區之寬度亦可等於長條區之寬度,故本發明之保護範圍並不侷限於第1A、1B及2圖所示之實施例。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 However, the width of the corner zone may also be less than the width of the strip zone. E.g, FIG. 2 illustrates another embodiment of the present invention, which differs from the embodiment shown in the first aspect of FIG. 1A in that the width W6 of the corner region 144 is smaller than the width W7 of the elongated region 146. Moreover, those skilled in the art will recognize that the width of the corner zone may also be equal to the width of the strip zone, and the scope of protection of the present invention is not limited to the embodiments shown in Figures 1A, 1B and 2. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.

接著回到第1B圖,顯示裝置100可更包括設於平坦層132上且覆蓋間隔牆140及主間隔物142之第一配向層148,以及設 於絕緣層136上之第二配向層150。此第一配向層148及第二配向層150係為用來誘導液晶分子定向排列的薄層,其材料可為聚亞醯胺(polyimide)或其它任何適合之配向層材料。此外,設於主間隔物142之頂面上的第一配向層148可直接接觸第二配向層150。此第一配向層148之厚度可為約300埃至1000埃,例如為約400埃至700埃,且此第一配向層148位於平坦層132上之厚度T1大於或等於第一配向層148位於間隔牆140上之厚度T2。 Next, returning to FIG. 1B , the display device 100 may further include a first alignment layer 148 disposed on the flat layer 132 and covering the partition wall 140 and the main spacer 142 , and A second alignment layer 150 on the insulating layer 136. The first alignment layer 148 and the second alignment layer 150 are thin layers for inducing alignment of liquid crystal molecules, and the material thereof may be polyimide or any other suitable alignment layer material. In addition, the first alignment layer 148 disposed on the top surface of the main spacer 142 may directly contact the second alignment layer 150. The first alignment layer 148 may have a thickness of about 300 angstroms to 1000 angstroms, for example, about 400 angstroms to 700 angstroms, and the first alignment layer 148 has a thickness T1 on the planar layer 132 that is greater than or equal to the first alignment layer 148. The thickness T2 on the partition wall 140.

繼續參見第1B圖,如前文所述,第一基板101之彩色 濾光層130可包括設於非顯示區105之第一彩色濾光層130D,且此第一彩色濾光層130D係對應於間隔牆140下方設置。此外,如第1B圖所示,第一彩色濾光層130D之寬度W8大於間隔牆140之寬度W5。然而,應注意的是,第一彩色濾光層之寬度亦可小於間隔牆之寬度。例如,在第3圖所示之另一實施例中,第一彩色濾光層130D之寬度W8小於間隔牆140之寬度W5。此外,此技術領域中具有通常知識者可知第一彩色濾光層之寬度亦可等於間隔牆之寬度,故本發明之保護範圍並不侷限於第1A、1B、2及3圖所示之實施例。 Continuing to refer to FIG. 1B, as described above, the color of the first substrate 101 The filter layer 130 may include a first color filter layer 130D disposed in the non-display area 105, and the first color filter layer 130D is disposed below the partition wall 140. Further, as shown in FIG. 1B, the width W8 of the first color filter layer 130D is larger than the width W5 of the partition wall 140. However, it should be noted that the width of the first color filter layer may also be smaller than the width of the partition wall. For example, in another embodiment shown in FIG. 3, the width W8 of the first color filter layer 130D is smaller than the width W5 of the partition wall 140. In addition, it is known to those skilled in the art that the width of the first color filter layer can also be equal to the width of the partition wall. Therefore, the scope of protection of the present invention is not limited to the implementations shown in FIGS. 1A, 1B, 2, and 3. example.

間隔牆140之高度H3可藉由改變對應其下方設置之 第一彩色濾光層130D之寬度W8來調整。詳細而言,若第一彩色濾光層130D之寬度W8越小,則間隔牆140之流平效應(reflow effect)越大,可允許間隔牆140有較低之高度。反之,若第一彩色濾光層130D之寬度W8越大,則間隔牆140之流平效應越小,可允許間隔牆140有較高之高度。因此,可藉由調整第一彩色濾光層130D之寬度W8來使主間隔物142與間隔牆140之高度差(亦即 H4-H3)介於前述較佳的範圍中(亦即約0.1μm至1.5μm)。 The height H3 of the partition wall 140 can be changed by correspondingly changing the setting below The width W8 of the first color filter layer 130D is adjusted. In detail, if the width W8 of the first color filter layer 130D is smaller, the greater the reflow effect of the partition wall 140, the partition wall 140 can be allowed to have a lower height. On the contrary, if the width W8 of the first color filter layer 130D is larger, the leveling effect of the partition wall 140 is smaller, and the partition wall 140 can be allowed to have a higher height. Therefore, the height difference between the main spacer 142 and the partition wall 140 can be adjusted by adjusting the width W8 of the first color filter layer 130D (ie, H4-H3) is in the above preferred range (i.e., about 0.1 μm to 1.5 μm).

此外,參見第4圖,該圖係本發明另一實施例之剖面 圖。與前述第1A-3圖所示之實施例的差異主要在於第一基板101之彩色濾光層130更包括對應於間隔牆140下方第二彩色濾光層130E,第二彩色濾光層130E與第一彩色濾光層130D相異,且第一彩色濾光層130D與第二彩色濾光層130E之交界S3對應於間隔牆140下方。然而,應注意的是,第一彩色濾光層130D與第二彩色濾光層130E之交界S3亦可對應於間隔牆140之第一側S1或此第一側S1以外之區域,本發明之保護範圍並不侷限於第4圖所示之實施例。此外,與第一彩色濾光層130D相似,間隔牆140之高度H3可藉由改變對應其下方設置之第二彩色濾光層130E之寬度W9來調整。 In addition, referring to FIG. 4, this figure is a cross section of another embodiment of the present invention. Figure. The difference from the embodiment shown in FIG. 1A-3 is that the color filter layer 130 of the first substrate 101 further includes a second color filter layer 130E corresponding to the lower portion of the partition wall 140, and the second color filter layer 130E and The first color filter layer 130D is different, and the boundary S3 of the first color filter layer 130D and the second color filter layer 130E corresponds to the lower portion of the partition wall 140. However, it should be noted that the boundary S3 between the first color filter layer 130D and the second color filter layer 130E may also correspond to the first side S1 of the partition wall 140 or the area other than the first side S1, and the present invention The scope of protection is not limited to the embodiment shown in FIG. Further, similar to the first color filter layer 130D, the height H3 of the partition wall 140 can be adjusted by changing the width W9 of the second color filter layer 130E disposed below it.

第5圖繪示本發明之另一實施例,與前述第1A-4圖所 示之實施例的差異主要在於間隔牆140係位於第二基板103之絕緣層136上,而非如前述第1A-4圖所示之實施例位於第一基板101之平坦層132上。此外,如第5圖所示,顯示裝置100可更包括設於絕緣層136上且覆蓋間隔牆140之第二配向層150,此第二配向層150之材料同前述第一配向層148之材料,且設於主間隔物142之頂面上的第二配向層150可直接接觸第一配向層148。此外,此第二配向層150位於絕緣層136上之厚度T3大於或等於第二配向層150位於間隔牆140上之厚度T4。 Figure 5 is a view showing another embodiment of the present invention, and the foregoing Figure 1A-4 The difference between the illustrated embodiments is mainly that the spacers 140 are located on the insulating layer 136 of the second substrate 103, rather than the flat layer 132 of the first substrate 101 as in the embodiment shown in the above 1A-4. In addition, as shown in FIG. 5, the display device 100 may further include a second alignment layer 150 disposed on the insulating layer 136 and covering the partition wall 140. The material of the second alignment layer 150 is the same as the material of the first alignment layer 148. The second alignment layer 150 disposed on the top surface of the main spacer 142 may directly contact the first alignment layer 148. In addition, the thickness T3 of the second alignment layer 150 on the insulating layer 136 is greater than or equal to the thickness T4 of the second alignment layer 150 on the partition wall 140.

此外,間隔牆140(或設於間隔牆140之頂面上的第 二配向層150)並未直接接觸第一基板101,故間隔牆140與第一基板101間具有第二間隙G2,且此第二間隙G2之高度H8為 0.1μm至1.5μm,例如為約0.3μm至0.8μm。第二間隙G2之高度H8係定義為第一配向層148至間隔牆140之頂面(或設於間隔牆140之頂面上的第二配向層150)的最大距離H9及最小距離H10之平均值(亦即H8=(H9+H10)/2)。應注意的是,若第二間隙G2之高度H8過大,例如大於約1.5μm,則間隔牆140無法有效防止框膠120經由第二間隙G2延伸進入顯示畫素區104,且間隔牆140與主間隔物142之高度差會過大,會使顯示裝置100產框形顯像不均(frame mura)等顯像不均之問題。然而,若第二間隙G2之高度H8過小,例如小於約0.1μm,則間隔牆140之頂面會過於靠近第一基板101,使延伸進入第二間隙G2之框膠120可能會將第一基板101推離第二基板103,會使顯示裝置100產生間隙顯像不均(gap mura)等顯像之問題,造成製程良率下降。 In addition, the partition wall 140 (or the top surface of the partition wall 140) The second alignment layer 150) does not directly contact the first substrate 101, so the second gap G2 is formed between the partition wall 140 and the first substrate 101, and the height H8 of the second gap G2 is 0.1 μm to 1.5 μm, for example, about 0.3 μm to 0.8 μm. The height H8 of the second gap G2 is defined as the average distance H9 and the minimum distance H10 of the top surface of the first alignment layer 148 to the partition wall 140 (or the second alignment layer 150 disposed on the top surface of the partition wall 140). Value (ie H8=(H9+H10)/2). It should be noted that if the height H8 of the second gap G2 is too large, for example, greater than about 1.5 μm, the partition wall 140 cannot effectively prevent the sealant 120 from extending into the display pixel region 104 via the second gap G2, and the partition wall 140 and the main The height difference of the spacers 142 is too large, which causes the display device 100 to produce a problem of uneven imaging such as frame mura. However, if the height H8 of the second gap G2 is too small, for example, less than about 0.1 μm, the top surface of the partition wall 140 may be too close to the first substrate 101, so that the sealant 120 extending into the second gap G2 may be the first substrate. When the 101 is pushed away from the second substrate 103, the display device 100 causes a problem of development such as gap mura, resulting in a decrease in process yield.

綜上所述,由於本發明之間隔牆可防止框膠接觸顯 示畫素區之液晶材料,故框膠與顯示畫素區之間的距離可更進一步的縮短以窄化顯示裝置之非顯示區,使顯示裝置更為輕、薄、短小。此外,由於間隔牆靠近顯示區的一側高度相對較高,故即使框膠延伸進入間隔牆仍無法進入顯示畫素區,故可進一步防止框膠接觸液晶材料造成顯示裝置之缺陷。 In summary, the partition wall of the present invention can prevent the frame glue from contacting The liquid crystal material of the pixel region is displayed, so that the distance between the sealant and the display pixel region can be further shortened to narrow the non-display area of the display device, making the display device lighter, thinner and shorter. In addition, since the height of the partition wall adjacent to the display area is relatively high, even if the sealant extends into the partition wall, the display pixel area cannot be entered, so that the frame glue can be further prevented from contacting the liquid crystal material to cause defects of the display device.

此外,本發明實施例係利用改變顯示裝置中線路之 配置,以縮小此線路於積體電路中所佔據的面積。此外,本發明實施例亦使用一圖案化測試墊以提昇此顯示裝置之製程可靠度及製程良率。 In addition, the embodiment of the present invention utilizes changing the line in the display device. Configured to reduce the area occupied by this line in the integrated circuit. In addition, the embodiment of the present invention also uses a patterned test pad to improve the process reliability and process yield of the display device.

首先,發明人已知之一種顯示裝置包括閘極驅動電 路、驅動單元、測試墊及線路。此驅動單元包括閘極訊號輸出接 點(Output Bump),且此閘極訊號輸出接點藉由線路電性連接至閘極驅動電路,並藉由另一線路電性連接至測試墊。由此可知,上述兩線路分別佔據了驅動單元中之兩區域(對應第6B圖之區域113A與區域113B)。而當面板解析度提高造成晶片(例如驅動單元)所需的訊號輸出接點增加時,會壓縮到面板上原本用以形成線路的面積,亦引發線路經過晶片下方時,晶片下方可容納線路空間不足的問題。 First, a display device known to the inventors includes a gate drive Roads, drive units, test pads and wiring. The drive unit includes a gate signal output connection Output Bump, and the gate signal output contact is electrically connected to the gate drive circuit by a line, and is electrically connected to the test pad by another line. It can be seen that the two lines occupy two areas in the driving unit (corresponding to the area 113A and the area 113B of FIG. 6B). When the resolution of the panel is increased, the signal output contact required for the chip (such as the driving unit) is increased, and the area originally formed on the panel to form the line is compressed, and when the line passes under the wafer, the line space can be accommodated under the wafer. Insufficient problems.

因此,為了縮小線路所佔據的面積,本發明提出另 一種顯示裝置中線路的配置方式。參見第6A圖,該圖係本發明實施例之顯示裝置之上視圖。如第6A圖所示,顯示裝置100包括顯示區104以及相鄰此顯示區104之非顯示區105,其中顯示區104係指顯示裝置100中設有包括電晶體之畫素顯示的區域,而此電晶體例如可為薄膜電晶體。因此,顯示區104亦可稱為顯示畫素區104。 而非顯示區105即為顯示裝置中除顯示區104外之其它區域。在此實施例中,非顯示區105係包圍顯示區104,且其中包括位於顯示區104兩側之閘極驅動電路(Gate Driver on Panel,GOP)107、與位於外部接腳連接區(Out Lead Bonding,OLB)115中的驅動單元106以及測試墊109。此外,非顯示區105中更包括線路110,且部分線路110係設於上述外部接腳連接區115中。於其他實施例中,閘極驅動電路107可僅位於顯示區104之單側。 Therefore, in order to reduce the area occupied by the line, the present invention proposes another A way of configuring a line in a display device. Referring to Figure 6A, there is shown a top view of a display device in accordance with an embodiment of the present invention. As shown in FIG. 6A, the display device 100 includes a display area 104 and a non-display area 105 adjacent to the display area 104, wherein the display area 104 refers to an area in the display device 100 provided with a pixel display including a transistor, and This transistor can be, for example, a thin film transistor. Therefore, the display area 104 can also be referred to as a display pixel area 104. The non-display area 105 is the area other than the display area 104 in the display device. In this embodiment, the non-display area 105 surrounds the display area 104, and includes a Gate Driver on Panel (GOP) 107 on both sides of the display area 104, and an external pin connection area (Out Lead). The drive unit 106 and the test pad 109 in Bonding, OLB) 115. In addition, the non-display area 105 further includes a line 110, and a part of the line 110 is disposed in the external pin connection area 115. In other embodiments, the gate drive circuit 107 can be located on only one side of the display area 104.

此顯示裝置100可為液晶顯示器,例如為薄膜電晶體 液晶顯示器。此驅動單元106可用以提供源極訊號至顯示區104之畫素(未繪示),或提供閘極訊號至閘極驅動電路107。而閘極驅動電路107係用以提供掃描脈衝訊號至顯示區104之畫素,並配合上 述源極訊號一同控制設於顯示區104內之各個畫素(未繪示)進而令顯示裝置100顯示畫面。此閘極驅動電路107例如可為面板上閘極驅動電路(Gate on Panel,GOP)或其他任何適合之閘極驅動電路。 The display device 100 can be a liquid crystal display, such as a thin film transistor. LCD Monitor. The driving unit 106 can be used to provide a source signal to the pixel of the display area 104 (not shown) or to provide a gate signal to the gate driving circuit 107. The gate driving circuit 107 is configured to provide a scan pulse signal to the pixel of the display area 104, and cooperate with The source signals together control respective pixels (not shown) provided in the display area 104 to cause the display device 100 to display a picture. The gate drive circuit 107 can be, for example, a Gate on Panel (GOP) or any other suitable gate drive circuit.

此外,此驅動單元106係經由測試墊109電性連接至 閘極驅動電路107。此測試墊109可藉由任何適合之方式電性連接至閘極驅動電路107及驅動單元106,例如,在一實施例中,如第6A圖所示,測試墊109可藉由線路110電性連接至閘極驅動電路107及驅動單元106。 In addition, the driving unit 106 is electrically connected to the test pad 109 to Gate drive circuit 107. The test pad 109 can be electrically connected to the gate driving circuit 107 and the driving unit 106 by any suitable means. For example, in an embodiment, as shown in FIG. 6A, the test pad 109 can be electrically connected by the line 110. It is connected to the gate driving circuit 107 and the driving unit 106.

本發明藉由將驅動單元106經由測試墊109電性連接 至閘極驅動電路107,可縮小線路110於驅動單元106中所佔據的面積。詳細而言,參見第6B圖,該圖係第6A圖之顯示裝置之部分放大圖。如該圖所示,驅動單元106之閘極訊號輸出接點Output Bump)111藉由線路110B電性連接至測試墊109,接著,此測試墊109再藉由另一線路110A電性連接至閘極驅動電路107。相較於前述之發明人已知的一種顯示裝置,於已知之顯示裝置中,線路110A與110B係分別自113A與113B輸出,因此於驅動單元106下方,須同時提供113A與113B的面積,但於本發明之線路110僅佔據驅動單元106中區域113B之面積,而未佔據區域113A,隨著面板解析度越高,驅動單元106的輸出線路數量越來越多的情況下,區域113A可提供其他輸出線路使用,故可解決晶片(例如驅動單元)中線路空間不足的問題。 The present invention electrically connects the driving unit 106 via the test pad 109. To the gate drive circuit 107, the area occupied by the line 110 in the drive unit 106 can be reduced. In detail, referring to Fig. 6B, which is a partially enlarged view of the display device of Fig. 6A. As shown in the figure, the gate signal output terminal Output Bump 111 of the driving unit 106 is electrically connected to the test pad 109 through the line 110B. Then, the test pad 109 is electrically connected to the gate through another line 110A. The pole drive circuit 107. Compared with the display device known by the inventors mentioned above, in the known display device, the lines 110A and 110B are output from 113A and 113B, respectively. Therefore, under the driving unit 106, the areas of 113A and 113B must be provided simultaneously, but The line 110 of the present invention occupies only the area of the area 113B in the driving unit 106, but does not occupy the area 113A. As the panel resolution is higher and the number of output lines of the driving unit 106 is more and more, the area 113A can provide Other output lines are used, so the problem of insufficient line space in the chip (such as the drive unit) can be solved.

再者,為了提昇第6A圖所示之顯示裝置100的製程可 靠度及製程良率,本發明之顯示裝置100的測試墊109可為一圖案 化測試墊。詳細而言,在測試顯示裝置100性能之測試步驟中,必須以探針接觸測試墊109,探針會於接觸測試墊109時於測試墊109之導電層該層上留下孔洞,而此導電層上的孔洞容易隨著時間推移受到水氧等因素而腐蝕擴大,造成驅動單元106與閘極驅動電路107之間的線路異常或斷路,進而降低顯示裝置100的可靠度及製程良率。為解決上述技術問題,本發明實施例之測試墊可圖案化成數個導電層彼此分離的功能性區塊,而該些功能性區塊再藉由其他連接層電性連接。 Furthermore, in order to improve the process of the display device 100 shown in FIG. 6A, The test pad 109 of the display device 100 of the present invention may be a pattern according to the degree of reliability and process yield. Test pad. In detail, in the test step of testing the performance of the display device 100, the probe must be contacted with the test pad 109, and the probe will leave a hole in the layer of the conductive layer of the test pad 109 when the test pad 109 is touched, and this conductive The holes in the layer are easily corroded by factors such as water and oxygen over time, causing abnormalities or disconnections between the driving unit 106 and the gate driving circuit 107, thereby reducing the reliability and process yield of the display device 100. In order to solve the above technical problem, the test pad of the embodiment of the present invention can be patterned into functional blocks in which a plurality of conductive layers are separated from each other, and the functional blocks are electrically connected by other connection layers.

參見第7圖及第8A圖,其中第7圖係本發明實施例之 測試墊109之上視圖,而第8A圖係第7圖之測試墊109沿著線段3-3之剖面圖。如以上兩圖所示,測試墊109包括設於基板102上之導電層M,且此導電層M包括第一區300及第二區302。此第一區300之導電層係用以傳遞兩線路110之間的訊號,而此第二區302之導電層係用以在測試步驟中與探針進行觸碰。此第一區300之導電層係直接接觸線路110,而第二區302之導電層與第一區300之導電層係分離設置,亦即僅觀察導電層M該層時,第一區300與第二區302並無連接或接觸,例如,第一區300之導電層與第二區302之導電層係可藉由一主間隙304分隔。此外,第二區302之導電層亦與線路110分離。易言之,僅觀察導電層M該層中,第二區302之導電層不直接接觸第一區300之導電層以及線路110。第一區300及第二區302係經由接觸孔,由其他連接層電性連接。 See Figure 7 and Figure 8A, wherein Figure 7 is an embodiment of the present invention. Test pad 109 is viewed from above, while Figure 8A is a cross-sectional view of test pad 109 of Figure 7 along line 3-3. As shown in the above two figures, the test pad 109 includes a conductive layer M disposed on the substrate 102, and the conductive layer M includes a first region 300 and a second region 302. The conductive layer of the first region 300 is used to transmit signals between the two lines 110, and the conductive layer of the second region 302 is used to touch the probe during the testing step. The conductive layer of the first region 300 is in direct contact with the line 110, and the conductive layer of the second region 302 is separated from the conductive layer of the first region 300, that is, when only the conductive layer M is observed, the first region 300 and The second region 302 is not connected or contacted. For example, the conductive layer of the first region 300 and the conductive layer of the second region 302 may be separated by a main gap 304. In addition, the conductive layer of the second region 302 is also separated from the line 110. In other words, only the conductive layer M is observed. The conductive layer of the second region 302 does not directly contact the conductive layer of the first region 300 and the line 110. The first region 300 and the second region 302 are electrically connected by other connection layers via contact holes.

本發明藉由將會與探針進行觸碰的第二區302之導 電層與用以傳遞訊號的第一區300之導電層及線路110分離,可將測試步驟後之腐蝕現象僅侷限於第二區302之導電層,而不會腐蝕 至第一區300之導電層及線路110。因此,即使於測試步驟後發生腐蝕之現象,本發明之圖案化測試墊109仍可良好地藉由第一區300之導電層及線路110傳遞訊號,因此,圖案化測試墊109可提昇此顯示裝置100的可靠度及製程良率。 The present invention is guided by the second region 302 that will be touched with the probe The electrical layer is separated from the conductive layer and the line 110 of the first region 300 for transmitting signals, and the corrosion phenomenon after the test step can be limited to the conductive layer of the second region 302 without corroding. The conductive layer to the first region 300 and the line 110. Therefore, even if the etching phenomenon occurs after the test step, the patterned test pad 109 of the present invention can transmit the signal well through the conductive layer of the first region 300 and the line 110, so that the patterned test pad 109 can enhance the display. Reliability of the device 100 and process yield.

此外,導電層M之第一區300對第二區302之面積的比 值範圍為2至1000,例如為4至10。若此第一區300對第二區302之面積比值太大,例如大於1000,則用以與探針進行觸碰的第二區302之導電層的面積太小,會使得測試步驟不易進行。然而,若此第一區300對第二區302之面積比值太小,例如小於2,則用以傳遞訊號之第一區300之導電層之面積太小,會使電阻上升。此外,此測試墊109之尺寸為100μm至1000μm,例如為500μm至800μm。此測試墊109之尺寸可為測試墊109之長度L或寬度W。 In addition, the ratio of the area of the first region 300 of the conductive layer M to the area of the second region 302 Values range from 2 to 1000, for example from 4 to 10. If the area ratio of the first region 300 to the second region 302 is too large, for example, greater than 1000, the area of the conductive layer of the second region 302 for contacting the probe is too small, which makes the test step difficult to perform. However, if the area ratio of the first region 300 to the second region 302 is too small, for example, less than 2, the area of the conductive layer of the first region 300 for transmitting the signal is too small, which causes the resistance to rise. Further, the test pad 109 has a size of 100 μm to 1000 μm, for example, 500 μm to 800 μm. The size of the test pad 109 can be the length L or the width W of the test pad 109.

參見第8A圖,導電層M係設於基板102上。此導電層 M可為一金屬層,且其材料可為單層或多層之銅、鋁、鎢、金、鉻、鎳、鉑、鈦、銥、銠、上述之合金、上述之組合或其它導電性佳的金屬材料。於其他實施例中,導電層M可為一非金屬材料,只要使用之材料具有導電性,且受到腐蝕後會有腐蝕擴散的情況之材料即可。例如,在第8A圖所示之實施例中,導電層M為雙層之導電層,其包括第一導電層M1以及第二導電層M2。在一實施例中,第一導電層M1與第二導電層M2之材料相同。然而,在其它實施例中,第一導電層M1與第二導電層M2之材料可以不同。 此兩導電層M1、M2之間設有介電層(ILD)206A。此第一導電層M1及第二導電層M2具有相同的圖案,且相對應的圖案之間係藉由設於介電層206A中的導孔V1電性連接。上述介電層206A之材料可 為氧化矽、氮化矽、氮氧化矽、硼磷矽玻璃(BPSG)、磷矽玻璃(PSG)、旋塗式玻璃(SOG)、其它任何適合之介電材料、或上述之組合。上述經由導孔V1電性連接第一導電層M1及第二導電層M2之材料可為第一導電層M1或第二導電層M2本身或其組合,或是其材料可包括銅、鋁、鎢、摻雜多晶矽、其它任何適合之導電材料、或上述之組合。 Referring to FIG. 8A, the conductive layer M is disposed on the substrate 102. Conductive layer M may be a metal layer, and the material thereof may be single layer or multiple layers of copper, aluminum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, alloys of the above, combinations thereof or other conductive properties. metallic material. In other embodiments, the conductive layer M may be a non-metallic material as long as the material used is electrically conductive and subjected to corrosion and diffusion. For example, in the embodiment shown in FIG. 8A, the conductive layer M is a two-layer conductive layer including a first conductive layer M1 and a second conductive layer M2. In an embodiment, the first conductive layer M1 and the second conductive layer M2 are made of the same material. However, in other embodiments, the materials of the first conductive layer M1 and the second conductive layer M2 may be different. A dielectric layer (ILD) 206A is disposed between the two conductive layers M1 and M2. The first conductive layer M1 and the second conductive layer M2 have the same pattern, and the corresponding patterns are electrically connected by the via holes V1 provided in the dielectric layer 206A. The material of the above dielectric layer 206A can be It is yttria, tantalum nitride, yttrium oxynitride, borophosphoquinone glass (BPSG), phosphoric bismuth glass (PSG), spin on glass (SOG), any other suitable dielectric material, or a combination thereof. The material for electrically connecting the first conductive layer M1 and the second conductive layer M2 via the via hole V1 may be the first conductive layer M1 or the second conductive layer M2 itself or a combination thereof, or the material thereof may include copper, aluminum, tungsten. Doped polysilicon, any other suitable electrically conductive material, or a combination thereof.

此外,在一實施例中,如第8A圖所示,第一區300之 導電層與第二區302之導電層可藉由連接層211電性連接,因連接層211相對於導電層抗腐蝕能力較高,因此不接觸之第一區300與第二區302藉由連接層211電性連接,也同時保護導電層不受水氧的影響而腐蝕。此連接層211的材料可為透明導電材料,例如為銦錫氧化物(ITO)氧化錫(TO)、氧化銦鋅(IZO)、氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、氧化銻錫(ATO)、氧化銻鋅(AZO)、上述之組合或其它抗腐蝕能力較高的適合之透明導電氧化物材料。連接層211可藉由設於介電層206B中的導孔V2電性連接至第一導電層M1或第二導電層M2,並藉此將第一區300之導電層與第二區302之導電層電性連接。 In addition, in an embodiment, as shown in FIG. 8A, the first zone 300 The conductive layer and the conductive layer of the second region 302 can be electrically connected by the connection layer 211. Because the connection layer 211 has high corrosion resistance with respect to the conductive layer, the first region 300 and the second region 302 that are not in contact are connected by The layer 211 is electrically connected, and at the same time, the conductive layer is protected from corrosion by water and oxygen. The material of the connection layer 211 may be a transparent conductive material, such as indium tin oxide (ITO) tin oxide (TO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), Antimony tin oxide (ATO), antimony zinc oxide (AZO), combinations of the above or other suitable transparent conductive oxide materials having high corrosion resistance. The connection layer 211 can be electrically connected to the first conductive layer M1 or the second conductive layer M2 through the via hole V2 provided in the dielectric layer 206B, and thereby the conductive layer of the first region 300 and the second region 302 The conductive layer is electrically connected.

此外,導電層M亦可為單層之導電層。例如,如第8B 圖所示,基板102上僅形成有單層之導電層M,且第一區300之導電層與第二區302之導電層亦可藉由連接層211經由導孔電性連接。例如,連接層211可藉由設於介電層206中的導孔V3電性連接至導電層M,以將第一區300之導電層與第二區302之導電層電性連接。 In addition, the conductive layer M may also be a single layer of conductive layer. For example, as in 8B As shown in the figure, only a single layer of conductive layer M is formed on the substrate 102, and the conductive layer of the first region 300 and the conductive layer of the second region 302 can also be electrically connected via the via hole through the connection layer 211. For example, the connection layer 211 can be electrically connected to the conductive layer M through the via hole V3 disposed in the dielectric layer 206 to electrically connect the conductive layer of the first region 300 and the conductive layer of the second region 302.

再參照第7圖,在第7圖所示之實施例中,主間隙304 可環繞第二區302之導電層。主間隙304之寬度可為10μm至100μm,例如為20μm至40μm。此外,主間隙304之寬度與測試墊109之寬度W的比值為0.01至0.25,例如為0.025至0.1。若此主間隙304之寬度太寬,例如其寬於100μm,或其與測試墊109之寬度W比值大於0.25,則主間隙304會佔據過多測試墊109之面積,使導電層M之面積減少,造成電阻增加。然而,若此主間隙304之寬度太窄,例如其窄於10μm,或其與測試墊109之寬度W比值小於0.01,則此主間隙304無法有效防止第一區300之導電層不被腐蝕。例如,當主間隙304之寬度太窄時,若探針因偏移而觸碰至主間隙304,仍可能造成第一區300之導電層的暴露,使第一區300之導電層被腐蝕。 Referring again to FIG. 7, in the embodiment shown in FIG. 7, the main gap 304 The conductive layer of the second region 302 can be surrounded. The main gap 304 may have a width of 10 μm to 100 μm, for example, 20 μm to 40 μm. Further, the ratio of the width of the main gap 304 to the width W of the test pad 109 is 0.01 to 0.25, for example, 0.025 to 0.1. If the width of the main gap 304 is too wide, for example, it is wider than 100 μm, or its ratio W to the width W of the test pad 109 is greater than 0.25, the main gap 304 may occupy an area of the excess test pad 109, so that the area of the conductive layer M is reduced. Causes an increase in resistance. However, if the width of the main gap 304 is too narrow, for example, it is narrower than 10 μm, or its ratio W to the width W of the test pad 109 is less than 0.01, the main gap 304 cannot effectively prevent the conductive layer of the first region 300 from being corroded. For example, when the width of the main gap 304 is too narrow, if the probe touches the main gap 304 due to the offset, the conductive layer of the first region 300 may be exposed, causing the conductive layer of the first region 300 to be corroded.

此外,第一區300之導電層亦環繞第二區302之導電 層,且第一區300之導電層更可藉由一或多條第一間隙306分隔成彼此分離之多個區塊,亦即此多個區塊之間不直接接觸,例如第7圖所示之區塊300A、300B。彼此分離之多個區塊300A、300B可更進一步提昇此顯示裝置100的製程可靠度及製程良率。詳細而言,在測試步驟中,探針可能會因為偏移而觸碰到第一區300之導電層,故第一區300之導電層亦可能因此於測試步驟後發生腐蝕現象。此時彼此分離之區塊300A、300B可將此腐蝕現象侷限於被探針觸碰到之區塊內,而訊號仍可藉由第一區300之導電層中未被腐蝕之其它區塊傳遞。例如,若探針觸碰至區塊300A,由於區塊300A、300B彼此分離,故腐蝕現象被侷限於區塊300A內,而訊號仍可藉由未被腐蝕之區塊300B傳遞。因此,將第一區300之導電層藉由一或多條第一間隙306分隔成彼此分離之多個區塊可更進 一步提昇此顯示裝置100的可靠度及製程良率。 In addition, the conductive layer of the first region 300 also surrounds the conductive region of the second region 302. a layer, and the conductive layer of the first region 300 may be separated into a plurality of blocks separated from each other by one or more first gaps 306, that is, the plurality of blocks are not in direct contact, for example, FIG. 7 Blocks 300A, 300B are shown. The plurality of blocks 300A, 300B separated from each other can further improve the process reliability and the process yield of the display device 100. In detail, in the test step, the probe may touch the conductive layer of the first region 300 due to the offset, so the conductive layer of the first region 300 may also cause corrosion after the test step. The blocks 300A, 300B separated from each other at this time can limit the corrosion phenomenon to the block touched by the probe, and the signal can still be transmitted by other blocks in the conductive layer of the first region 300 that are not corroded. . For example, if the probe touches the block 300A, since the blocks 300A, 300B are separated from each other, the corrosion phenomenon is confined to the block 300A, and the signal can still be transmitted by the block 300B which is not corroded. Therefore, the conductive layer of the first region 300 can be further divided by a plurality of blocks separated by one or more first gaps 306. The reliability and process yield of the display device 100 are improved in one step.

上述第一間隙306之寬度可為3μm至50μm,例如為 10μm至20μm。或者,第一間隙306之寬度與測試墊109之寬度W的比值為0.0033至0.1,例如為0.01至0.02。若此第一間隙306之寬度太寬,例如其寬於50μm,或其與測試墊109之寬度W比值大於0.1,則第一間隙306會佔據過多測試墊109之面積,使導電層M之面積減少,造成電阻增加。然而,若此第一間隙306之寬度太窄,例如其窄於3μm,或其與測試墊109之寬度W比值小於0.0033,則此第一間隙306無法有效分隔區塊300A與區塊300B。 The width of the first gap 306 may be 3 μm to 50 μm, for example 10 μm to 20 μm. Alternatively, the ratio of the width of the first gap 306 to the width W of the test pad 109 is 0.0033 to 0.1, for example, 0.01 to 0.02. If the width of the first gap 306 is too wide, for example, it is wider than 50 μm, or its ratio W to the width W of the test pad 109 is greater than 0.1, the first gap 306 may occupy the area of the excess test pad 109, so that the area of the conductive layer M Reduced, causing an increase in resistance. However, if the width of the first gap 306 is too narrow, for example, it is narrower than 3 μm, or its ratio W to the width W of the test pad 109 is less than 0.0033, the first gap 306 cannot effectively separate the block 300A from the block 300B.

再者,第一區300之彼此分離的多個區塊300A、300B 內可更包括一或多條區塊內間隙308而將區塊300A、300B分隔成多個子區塊。上述多個子區塊彼此大抵分離,僅藉由一小部分彼此連接。例如區塊300A可藉由多條區塊內間隙308分隔成多個子區塊300Aa、300Ab,此子區塊300Aa、300Ab之間彼此大抵分離,僅藉由圖式中左上及左下之一小部分彼此物理連接。上述彼此分離的多個子區塊300Aa、300Ab亦可進一步提昇此顯示裝置100的製程可靠度及製程良率。例如,當探針因偏移而觸碰到子區塊300Ab時,由於子區塊300Aa、300Ab僅藉由一小部分連接,故腐蝕現象易被侷限於子區塊300Ab內,即使子區塊300Ab因腐蝕而破壞,訊號仍可藉由未被腐蝕之區塊300Aa傳遞。因此,將多個區塊300A、300B藉由區塊內間隙308分隔成多個子區塊(例如子區塊300Aa、300Ab)可更進一步提昇此顯示裝置100的可靠度及製程良率。 Furthermore, the plurality of blocks 300A, 300B of the first zone 300 separated from each other One or more intra-block gaps 308 may be included to divide the blocks 300A, 300B into a plurality of sub-blocks. The plurality of sub-blocks are largely separated from each other and are connected to each other only by a small portion. For example, the block 300A can be separated into a plurality of sub-blocks 300Aa, 300Ab by a plurality of intra-block gaps 308. The sub-blocks 300Aa, 300Ab are separated from each other by a small portion of the upper left and lower left in the drawing. Physically connected to each other. The plurality of sub-blocks 300Aa, 300Ab separated from each other can further improve the process reliability and the process yield of the display device 100. For example, when the probe touches the sub-block 300Ab due to the offset, since the sub-blocks 300Aa, 300Ab are connected by only a small portion, the corrosion phenomenon is easily confined to the sub-block 300Ab even if the sub-block The 300Ab is destroyed by corrosion and the signal can still be transmitted by the unetched block 300Aa. Therefore, dividing the plurality of blocks 300A, 300B into a plurality of sub-blocks (for example, sub-blocks 300Aa, 300Ab) by the intra-block gap 308 can further improve the reliability and process yield of the display device 100.

上述區塊內間隙308之寬度可為3μm至50μm,例如為 10μm至20μm。或者,區塊內間隙308之寬度與測試墊109之寬度W的比值為0.0033至0.1,例如為0.01至0.02。若此區塊內間隙308之寬度太寬,例如其寬於50μm,或其與測試墊109之寬度W比值大於0.1,則區塊內間隙308會佔據過多測試墊109之面積,使導電層M之面積減少,造成電阻增加。然而,若此區塊內間隙308之寬度太窄,例如其窄於3μm,或其與測試墊109之寬度W比值小於0.0033,則子區塊300Aa、300Ab過於接近,內間隙308無法有效分隔腐蝕之影響。 The width of the gap 308 in the above block may be 3 μm to 50 μm, for example 10 μm to 20 μm. Alternatively, the ratio of the width of the gap 308 in the block to the width W of the test pad 109 is 0.0033 to 0.1, for example, 0.01 to 0.02. If the width of the gap 308 in the block is too wide, for example, it is wider than 50 μm, or its ratio W to the width W of the test pad 109 is greater than 0.1, the gap 308 in the block may occupy the area of the excess test pad 109, so that the conductive layer M The area is reduced, resulting in an increase in resistance. However, if the width of the gap 308 in the block is too narrow, for example, it is narrower than 3 μm, or its ratio W to the width W of the test pad 109 is less than 0.0033, the sub-blocks 300Aa, 300Ab are too close, and the inner gap 308 cannot effectively separate the corrosion. influences.

繼續參見第7圖,線路110之材料可為單層或多層之 銅、鋁、鎢、金、鉻、鎳、鉑、鈦、銥、銠、上述之合金、上述之組合或其它導電性佳的金屬材料,且線路110亦可具有一或多條線路內間隙310。在一實施例中,至少一線路內間隙310與至少一第一間隙306連接。此線路內間隙310亦可進一步提昇此顯示裝置100的製程可靠度及製程良率。詳細而言,若腐蝕現象由第一區300之區塊300A延伸至第一區塊線路110C,則線路內間隙310可將此腐蝕現象侷限於此第一區塊線路110C,使第二區塊線路110D不會被腐蝕。因此,由於線路110不會被完全腐蝕,故可提昇此顯示裝置100的製程可靠度及製程良率。於其他實施例中,連接層211亦可覆蓋於線路110上。 Continuing to refer to Figure 7, the material of line 110 can be single or multiple layers. Copper, aluminum, tungsten, gold, chromium, nickel, platinum, titanium, niobium, tantalum, alloys of the above, combinations thereof, or other highly conductive metal materials, and the line 110 may also have one or more inter-line gaps 310. . In an embodiment, at least one in-line gap 310 is coupled to at least one first gap 306. The in-line gap 310 can further improve the process reliability and process yield of the display device 100. In detail, if the corrosion phenomenon extends from the block 300A of the first zone 300 to the first block line 110C, the in-line gap 310 can limit the corrosion phenomenon to the first block line 110C, so that the second block Line 110D will not be corroded. Therefore, since the line 110 is not completely corroded, the process reliability and the process yield of the display device 100 can be improved. In other embodiments, the connection layer 211 can also be overlaid on the line 110.

上述線路內間隙310之寬度可為3μm至50μm,例如為 10μm至20μm。或者,線路內間隙310之寬度與線路110之寬度的比值為0.02至0.5,例如為0.05至0.2。若此線路內間隙310之寬度太寬,例如其寬於50μm,或其與線路110之寬度比值大於0.5,表示內間隙310過大會增加線路110斷線之風險。然而,若此線路內間 隙310之寬度太窄,例如其窄於3μm,或其與線路110之寬度比值小於0.02,則此線路內間隙310無法有效分隔線路內間隙310兩側之第一區塊線路110C與第二區塊線路110D間相互受到腐蝕之影響。此外,線路內間隙310之長度與測試墊109之長度L比值為0.03至3。線路內間隙310之長度最短可為3μm,或者,線路內間隙310之長度與測試墊109之長度L的比值最小可為0.03。而線路內間隙310之長度最長可等於線路110於外部接腳連接區115內的長度。若線路內間隙310太短,例如其長度短於3μm,或其長度與測試墊109之長度L的比值小於0.03,則此線路內間隙310無法有效分隔第一區塊線路110C與第二區塊線路110D。然而,線路內間隙310之長度不可長於外部接腳連接區115中的線路110的長度。 The width of the line gap 310 may be 3 μm to 50 μm, for example 10 μm to 20 μm. Alternatively, the ratio of the width of the in-line gap 310 to the width of the line 110 is 0.02 to 0.5, for example, 0.05 to 0.2. If the width of the gap 310 in the line is too wide, for example, it is wider than 50 μm, or its ratio to the width of the line 110 is greater than 0.5, it indicates that the inner gap 310 is excessively increased to increase the risk of disconnection of the line 110. However, if this line is inside If the width of the gap 310 is too narrow, for example, it is narrower than 3 μm, or the ratio of the width to the line 110 is less than 0.02, the line gap 310 cannot effectively separate the first block line 110C and the second area on both sides of the line inner gap 310. The block lines 110D are mutually affected by corrosion. Further, the ratio of the length of the in-line gap 310 to the length L of the test pad 109 is 0.03 to 3. The length of the line gap 310 may be as short as 3 μm, or the ratio of the length of the line gap 310 to the length L of the test pad 109 may be at least 0.03. The length of the line gap 310 may be the longest than the length of the line 110 in the external pin connection area 115. If the line gap 310 is too short, for example, its length is shorter than 3 μm, or the ratio of its length to the length L of the test pad 109 is less than 0.03, the line gap 310 cannot effectively separate the first block line 110C from the second block. Line 110D. However, the length of the in-line gap 310 may not be longer than the length of the line 110 in the external pin connection region 115.

應注意的是,除上述第7圖所示之實施例以外,本發 明之測試墊亦可有其它圖案,如第9-12圖之實施例所示。本發明之範圍並不以第7圖所示之實施例為限。 It should be noted that, in addition to the embodiment shown in FIG. 7 above, the present invention The test pad of the Ming can also have other patterns, as shown in the embodiment of Figures 9-12. The scope of the invention is not limited to the embodiment shown in Fig. 7.

參見第9圖,該圖為本發明另一實施例之測試墊之上 視圖。第9圖所示之實施例與前述第7圖之實施例之差別在於第二區302之導電層亦藉由一或多條第二間隙312分隔成彼此分離之多個區塊302A、302B。易言之,此多個區塊302A、302B之間不直接接觸。此外,在此實施例中,第一區300之導電層不具有區塊內間隙。 Referring to Figure 9, the figure is above the test pad of another embodiment of the present invention. view. The embodiment shown in FIG. 9 differs from the embodiment of FIG. 7 in that the conductive layer of the second region 302 is also separated into a plurality of blocks 302A, 302B separated from each other by one or more second gaps 312. In other words, there is no direct contact between the plurality of blocks 302A, 302B. Moreover, in this embodiment, the conductive layer of the first region 300 does not have an inter-block gap.

上述彼此分離的多個區塊302A、302B亦可進一步提 昇此顯示裝置100的製程可靠度及製程良率。例如,當探針僅觸碰區塊302A時,腐蝕現象被侷限於區塊302A,而未被腐蝕之區塊302B亦可經導孔藉由連接層傳遞訊號,故可提昇此顯示裝置100 的可靠度及製程良率,並降低電阻。 The plurality of blocks 302A, 302B separated from each other may further be mentioned The process reliability and process yield of the display device 100 are increased. For example, when the probe only touches the block 302A, the corrosion phenomenon is limited to the block 302A, and the unetched block 302B can also transmit the signal through the via hole through the via hole, thereby improving the display device 100. Reliability and process yield, and reduce resistance.

上述第二間隙312之寬度可為10μm至100μm,例如為 30μm至50μm。或者,第二間隙312之寬度與測試墊109之寬度W的比值為0.01至0.25,例如為0.05至0.1。若此第二間隙312之寬度太寬,例如其寬於100μm,或其與測試墊109之寬度W比值大於0.25,則第二間隙312會佔據過多測試墊109之面積,使導電層M之面積減少,造成電阻增加。然而,若此第二間隙312之寬度太窄,例如其窄於10μm,或其與測試墊109之寬度W比值小於0.01,則此第二間隙312無法有效分隔區塊302A與區塊302B。 The width of the second gap 312 may be 10 μm to 100 μm, for example 30 μm to 50 μm. Alternatively, the ratio of the width of the second gap 312 to the width W of the test pad 109 is 0.01 to 0.25, for example, 0.05 to 0.1. If the width of the second gap 312 is too wide, for example, it is wider than 100 μm, or its ratio W to the width W of the test pad 109 is greater than 0.25, the second gap 312 may occupy the area of the excess test pad 109, so that the area of the conductive layer M Reduced, causing an increase in resistance. However, if the width of the second gap 312 is too narrow, for example, it is narrower than 10 μm, or its ratio W to the width W of the test pad 109 is less than 0.01, the second gap 312 cannot effectively separate the block 302A from the block 302B.

參見第10圖,該圖為本發明又一實施例之測試墊之 上視圖。在第10圖所示之實施例中,第二區302之導電層亦藉由第二間隙312分隔成彼此分離之多個區塊302A、302B。而此實施例與前述第9圖實施例之差別在於此實施例之第二間隙312係對準第一間隙306以及線路內間隙310。 Referring to FIG. 10, the figure shows a test pad according to still another embodiment of the present invention. Top view. In the embodiment shown in FIG. 10, the conductive layer of the second region 302 is also separated into a plurality of blocks 302A, 302B separated from each other by the second gap 312. The difference between this embodiment and the foregoing embodiment of FIG. 9 is that the second gap 312 of this embodiment is aligned with the first gap 306 and the in-line gap 310.

參見第11圖,該圖為本發明另一實施例之測試墊之 上視圖。第11圖所示之實施例與前述第10圖實施例之差別在於第二區302之導電層係藉由三條第二間隙312分隔成彼此分離之四個區塊302A、302B、302C與302D。此外,線路110具有兩條線路內間隙310,且第一區300之導電層不具有第一間隙。 Referring to FIG. 11 , the figure shows a test pad according to another embodiment of the present invention. Top view. The difference between the embodiment shown in FIG. 11 and the first embodiment of FIG. 10 is that the conductive layer of the second region 302 is divided into four blocks 302A, 302B, 302C and 302D separated from each other by three second gaps 312. In addition, line 110 has two in-line gaps 310, and the conductive layer of first region 300 does not have a first gap.

參見第12圖,該圖為本發明另一實施例之測試墊之 上視圖。第12圖所示之實施例與前述第7圖及第9-11圖實施例之差別在於第一區300之導電層並未環繞第二區302之導電層,而是設於第二區302之導電層之一側。且第二區302之導電層係藉由六條第二間隙312分隔成彼此分離之七個區塊302A、302B、302C、 302D、302E、302F與302G。於其他實施例中,第二間隙312之形狀不限於直線,亦不限於上述實施例之劃分方式,只要可以將第二區302之導電層分隔成彼此分離之數個區塊即可。 Referring to FIG. 12, the figure shows a test pad according to another embodiment of the present invention. Top view. The difference between the embodiment shown in FIG. 12 and the foregoing embodiment of FIG. 7 and FIG. 9-11 is that the conductive layer of the first region 300 does not surround the conductive layer of the second region 302, but is disposed in the second region 302. One side of the conductive layer. And the conductive layer of the second region 302 is divided into seven blocks 302A, 302B, 302C separated from each other by six second gaps 312. 302D, 302E, 302F and 302G. In other embodiments, the shape of the second gap 312 is not limited to a straight line, and is not limited to the division manner of the above embodiment, as long as the conductive layer of the second region 302 can be divided into a plurality of blocks separated from each other.

綜上所述,藉由將驅動單元經由測試墊電性連接至 閘極驅動電路,可縮小線路於驅動單元中所佔據的面積,解決當面板解析度提高時所造成的驅動單元中線路空間不足的問題。此外,藉由使用圖案化測試墊,可將測試步驟後之腐蝕僅侷限於圖案化測試墊之部分區域內,以提昇此顯示裝置的製程可靠度及製程良率。 In summary, the drive unit is electrically connected to the test pad via the test pad. The gate driving circuit can reduce the area occupied by the circuit in the driving unit, and solve the problem that the line space in the driving unit is insufficient when the resolution of the panel is improved. In addition, by using the patterned test pad, the corrosion after the test step can be limited to only a part of the patterned test pad to improve the process reliability and process yield of the display device.

此外,本發明實施例另提供一種顯示裝置,提高走 線區內導線的集積度,以降低走線區於顯示裝置中所佔據的面積,因此可在不增加顯示裝置尺寸的前提下,提昇顯示裝置的解析度。 In addition, an embodiment of the present invention further provides a display device to improve walking. The accumulation degree of the wires in the line area is to reduce the area occupied by the line area in the display device, so that the resolution of the display device can be improved without increasing the size of the display device.

此外,根據本發明實施例,本發明所述顯示裝置可 更包含一第一導電圈位於顯示區外側,其由複數之導電區塊構成,可避免在顯示裝置製作過程中,靜電累積而使顯示裝置受損。 In addition, according to an embodiment of the present invention, the display device of the present invention may Further, the first conductive coil is disposed outside the display area, and is composed of a plurality of conductive blocks, so that the static electricity is accumulated during the manufacturing process of the display device to damage the display device.

再者,根據本發明實施例,本發明所述顯示裝置可 更包含一第二導電圈位於顯示區外側,其中一框膠設置於該第二導電圈上且位於顯示裝置之外圍邊界內,可確保第二導電圈之抗靜電放電能力。 Furthermore, according to an embodiment of the present invention, the display device of the present invention can be The second conductive coil is disposed on the outer side of the display area, and a sealant is disposed on the second conductive ring and located in a peripheral boundary of the display device to ensure the antistatic discharge capability of the second conductive ring.

首先,請參照第13圖,係為本發明一實施例所述之 顯示裝置100之上視圖。該顯示裝置100包含一顯示區104及一驅動單元106配置於一基板102之上。該顯示裝置100可為液晶顯示器(例如為薄膜電晶體液晶顯示器)、或是有機電激發光裝置(例如為 主動式全彩有機電激發光裝置)。該顯示區104具有複數個畫素(未繪示),而該驅動單元106係藉由複數個訊號線組(signal line pairs)110連接至該顯示區104,提供訊號至顯示區110的複數個畫素以產生影像。其中,該顯示區104及該驅動單元106之間係以一走線區108(fanout area)相隔,而該複數個訊號線組110係配置於該走線區108(fanout area)內。其中,每一訊號線組110包含一第一導線112與一第二導線114,且該第一導線112與該第二導線114係彼此電性絕緣,並用於傳遞不同之訊號。舉例來說,位於該顯示區104內之每一畫素可由多個次畫素(例如:紅色次畫素、藍色次畫素、及綠色次畫素;或是紅色次畫素、藍色次畫素、綠色次畫素、及白色次畫素)所構成,而該複數個訊號線組110之第一導線112與第二導線114則係用於傳遞由驅動單元106所產生的訊號至不同的次畫素中。此外,在該走線區108內,每一訊號線組110的該第一導線112與該第二導線114至少部份重疊。 First, please refer to FIG. 13 for an embodiment of the present invention. A top view of the display device 100. The display device 100 includes a display area 104 and a driving unit 106 disposed on a substrate 102. The display device 100 can be a liquid crystal display (for example, a thin film transistor liquid crystal display) or an organic electroluminescent device (for example, Active full color organic electroluminescent device). The display area 104 has a plurality of pixels (not shown), and the driving unit 106 is connected to the display area 104 by a plurality of signal line pairs 110 to provide a plurality of signals to the display area 110. A pixel to produce an image. The display area 104 and the driving unit 106 are separated by a fanout area 108, and the plurality of signal line groups 110 are disposed in the fanout area 108. The first wire 112 and the second wire 114 are electrically insulated from each other and used to transmit different signals. For example, each pixel located in the display area 104 may be composed of multiple sub-pixels (eg, red sub-pixels, blue sub-pixels, and green sub-pixels; or red sub-pixels, blue The sub-pixels, the green sub-pixels, and the white sub-pixels are formed, and the first wires 112 and the second wires 114 of the plurality of signal line groups 110 are used to transmit the signals generated by the driving unit 106 to Different sub-pixels. In addition, in the routing area 108, the first wire 112 of each signal line group 110 and the second wire 114 at least partially overlap.

仍請參照第13圖,該走線區108(fanout area)可進一步 被定義為由一第一線路區108a、一第二線路區108b、及一第三線路區108c所構成,其中該第一線路區108a與該顯示區104相鄰、該第三線路區108c與該驅動單元106相鄰、以及該第二線路區108b位於該第一線路區108a與第三線路區108c之間。 Still referring to Figure 13, the fanout area 108 can further It is defined as being composed of a first line region 108a, a second line region 108b, and a third line region 108c, wherein the first line region 108a is adjacent to the display region 104, and the third line region 108c is The drive unit 106 is adjacent and the second line region 108b is located between the first line region 108a and the third line region 108c.

根據本發明一實施例,在該第一線路區108a內任兩 相鄰之該第一導線112及該第二導線114係以一距離(即兩者間最短的水平距離)Da相隔,而該第三線路區108c內任兩相鄰之該第一導線112及該第二導線114係以一距離(即兩者間最短的水平距離)Dc相隔。其中,該距離Da可介於約3μm至40μm之間、該距離 Dc可介於約3μm至18μm之間、且該距離Da大於該距離Dc。 According to an embodiment of the invention, any two in the first line area 108a The adjacent first wire 112 and the second wire 114 are separated by a distance (ie, the shortest horizontal distance between the two) Da, and the first wire 112 adjacent to the two adjacent wires in the third line region 108c and The second wire 114 is separated by a distance (ie, the shortest horizontal distance between the two) Dc. Wherein, the distance Da may be between about 3 μm and 40 μm, the distance Dc may be between about 3 μm and 18 μm, and the distance Da is greater than the distance Dc.

請參照第14A圖,係顯示第13圖所述之顯示裝置沿切 線A-A’的剖面結構示意圖。由第14A圖可得知,在該第二線路區108b內,該些訊號線組110至少其中之一之該第一導線112可與該第二導線114重疊,以降低該第一導線112與該第二導線114投影於一水平面上之面積,增加走線區108的集積度。 Please refer to Figure 14A for the display device shown in Figure 13 A schematic cross-sectional view of line A-A'. It can be seen from FIG. 14A that in the second line region 108b, the first wire 112 of at least one of the signal line groups 110 can overlap with the second wire 114 to lower the first wire 112 and The area of the second wire 114 projected on a horizontal surface increases the accumulation of the trace area 108.

仍請參照第14A圖,該第一導線112可配置於該基板 102之上。一介電層116配置於該基板102之上,並覆蓋該第一導線112。該第二導線114配置於該介電層116之上,且該訊號線組110之該第一導線112係與該第二導線114重疊。一保護層(passivation layer)118配置於該介電層116之上,並覆蓋該第二導線114。其中,該基板102可為石英、玻璃、矽、金屬、塑膠、或陶瓷材料;該第一導線112及該第二導線114之材質可為單層或多層的金屬導電材料(例如:鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、金(Au)、鎢(W)、或其合金)、金屬化合物導電材料(例如:包含鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、金(Au)、鎢(W)、鎂(Mg)、或上述組合之化合物)、或其組合,且該第一導線112及該第二導線114之材質可為相同或不同;該介電層116之材質可為氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合;以及,該保護層118之材質可為有機之絕緣材料(光感性樹脂)或無機之絕緣材料(氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合),可用來隔絕第一導線112及該第二導線114與空氣或水氣的接觸。此外,根據本發明實施例,該第一導線112及該第二導 線114具有傾斜的側壁,請參照第14A圖,其中該側壁與一水平面的夾角係介於約15度至90度之間,且該第一導線其側壁的傾斜幅度及該第二導線其側壁的傾斜幅度係相同或不同。 Still referring to FIG. 14A, the first wire 112 can be disposed on the substrate. Above 102. A dielectric layer 116 is disposed over the substrate 102 and covers the first wire 112. The second wire 114 is disposed on the dielectric layer 116 , and the first wire 112 of the signal line group 110 overlaps the second wire 114 . A passivation layer 118 is disposed over the dielectric layer 116 and covers the second wire 114. The substrate 102 may be a quartz, glass, germanium, metal, plastic, or ceramic material; the first conductive line 112 and the second conductive line 114 may be made of a single or multiple layers of a metal conductive material (for example, aluminum (Al). ), copper (Cu), molybdenum (Mo), titanium (Ti), platinum (Pt), iridium (Ir), nickel (Ni), chromium (Cr), silver (Ag), gold (Au), tungsten (W (or alloy thereof), a conductive compound of a metal compound (for example, comprising aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), platinum (Pt), iridium (Ir), nickel (Ni), Chromium (Cr), silver (Ag), gold (Au), tungsten (W), magnesium (Mg), or a combination thereof, or a combination thereof, and the material of the first wire 112 and the second wire 114 The material of the dielectric layer 116 may be tantalum nitride, hafnium oxide, tantalum oxynitride, tantalum carbide, aluminum oxide, or a combination thereof; and the material of the protective layer 118 may be organic. An insulating material (photosensitive resin) or an inorganic insulating material (tantalum nitride, hafnium oxide, tantalum oxynitride, tantalum carbide, aluminum oxide, or a combination thereof) may be used to isolate the first wire 112 and the second wire 114 Contact with air or moisture. In addition, according to an embodiment of the invention, the first wire 112 and the second guide The line 114 has a slanted side wall. Please refer to FIG. 14A, wherein the angle between the side wall and a horizontal plane is between about 15 degrees and 90 degrees, and the inclination of the side wall of the first wire and the side wall of the second wire The slopes are the same or different.

根據本發明實施例,該第一導線112之線寬W1可介於 約2μm至10μm之間、該第二導線114之線寬W2可介於約2μm至10μm之間、且該第一導線112之線寬W1與該第二導線114之線寬W2可為相同(如第14A圖所示)或是不同(如第14B圖所示)。換言之,該第一導線112之線寬W1與該第二導線114之線寬W2的比值可介於1至5之間。舉例來說,請參照第14B圖,該第一導線112之線寬W1可大於該第二導線114之線寬W2。此外,請參照第2A至14B圖,第一導線112及該第二導線114可完全重疊(即該第一導線112對於水平面之投影與該第二導線112對於水平面之投影完全重疊)。 According to an embodiment of the invention, the line width W1 of the first wire 112 may be between Between about 2 μm and 10 μm, the line width W2 of the second wire 114 may be between about 2 μm and 10 μm, and the line width W1 of the first wire 112 and the line width W2 of the second wire 114 may be the same ( As shown in Figure 14A) or different (as shown in Figure 14B). In other words, the ratio of the line width W1 of the first wire 112 to the line width W2 of the second wire 114 may be between 1 and 5. For example, referring to FIG. 14B, the line width W1 of the first wire 112 may be greater than the line width W2 of the second wire 114. In addition, referring to FIGS. 2A-14B, the first wire 112 and the second wire 114 may completely overlap (ie, the projection of the first wire 112 to the horizontal plane and the projection of the second wire 112 to the horizontal plane completely overlap).

根據本發明實施例,在該第二線路區108b內任兩相 鄰的該第一導線112相隔一距離(即在該第二線路區108b內兩相鄰第一導線間最短的水平距離)D1,且在該第二線路區108b內任兩相鄰的該第二導線114相隔一距離(即在該第二線路區108b內兩相鄰第二導線間最短的水平距離)D2,其中該距離D1可介於約2μm至30μm之間,而該距離D2可介於約2μm至30μm之間。 According to an embodiment of the invention, any two phases in the second line region 108b The adjacent first wires 112 are separated by a distance (ie, the shortest horizontal distance between two adjacent first wires in the second line region 108b) D1, and any two adjacent ones in the second line region 108b The two wires 114 are separated by a distance (ie, the shortest horizontal distance between two adjacent second wires in the second line region 108b) D2, wherein the distance D1 can be between about 2 μm and 30 μm, and the distance D2 can be It is between about 2 μm and 30 μm.

根據本發明實施例,在該第二線路區108b內,該第 一導線112之線寬W1與該距離D1的總和(W1+D1)係等於該第二導線114之線寬W2與距離D2的總和(W2+D2)。此外,該距離D1與該距離D1及該第一導線112之線寬W1的總和(W1+D1)之比值(D1/(W1+D1))可介於0.1至0.66之間。當該比值(D1/(W1+D1)大於 或等於0.1時,有利於後續形成於該第二線路區108b之上的一框膠(未繪示)於一固合製程(由基板102施一能量)中完全固合;而當該比值(D1/(W1+D1)小於或等於0.66時,有利於該第二線路區108b內導線集積度的提高。 According to an embodiment of the present invention, in the second line region 108b, the first The sum of the line width W1 of one wire 112 and the distance D1 (W1+D1) is equal to the sum of the line width W2 and the distance D2 of the second wire 114 (W2+D2). Furthermore, the ratio (D1/(W1+D1)) of the distance D1 to the sum (W1+D1) of the distance D1 and the line width W1 of the first wire 112 may be between 0.1 and 0.66. When the ratio (D1/(W1+D1) is greater than Or equal to 0.1, which facilitates the subsequent formation of a sealant (not shown) formed on the second line region 108b in a consolidation process (energy applied by the substrate 102); and when the ratio ( When D1/(W1+D1) is less than or equal to 0.66, it is advantageous to improve the degree of accumulation of the wires in the second line region 108b.

另一方面,該第一導線112及該第二導線114重疊部份的寬度W3(該第一導線112對於水平面之投影與該第二導線112對於水平面之投影的最小重疊寬度)與該第一導線112之線寬W1的比值可介於0.3至1之間。換言之,在該第二線路區108b內,訊號線組110之該第一導線112與該第二導線114可部份重疊(即該第一導線112對於水平面之投影與該第二導線112對於水平面之投影僅部份重疊),如第14C圖所示,此時該第一導線112之線寬W1、該第二導線114之線寬W2、及該第一導線112及該第二導線114重疊部份的寬度W3符合以下公式:(W1+W2-W3)/W1≧1 On the other hand, the width W3 of the overlapping portion of the first wire 112 and the second wire 114 (the minimum overlap width of the projection of the first wire 112 with respect to the horizontal plane and the projection of the second wire 112 with respect to the horizontal plane) and the first The ratio of the line width W1 of the wire 112 may be between 0.3 and 1. In other words, in the second line region 108b, the first wire 112 of the signal line group 110 and the second wire 114 may partially overlap (ie, the projection of the first wire 112 to the horizontal plane and the second wire 112 to the horizontal plane) The projections are only partially overlapped. As shown in FIG. 14C, the line width W1 of the first wire 112, the line width W2 of the second wire 114, and the first wire 112 and the second wire 114 overlap. The width W3 of the part conforms to the following formula: (W1+W2-W3)/W1≧1

請參照第15圖,係為本發明另一實施例所述之顯示裝置100之上視圖。該顯示裝置100,除了包含該顯示區104、該驅動單元106、及該走線區108外,可更包含一第一導電圈(conductive loop)116,配置於基板102上且位於該顯示區104外側。如第15圖所示,該第一導電圈116可配置於該基板102上,並環繞該顯示區104,並與該驅動單元106連接。該驅動單元106可提供一電壓至該第一導電圈116,以使該第一導電圈116具有一參考電位。值得注意的是,該第一導電圈116於該走線區108會與該些訊號線組110重疊,重疊部分可以由該第一導電圈116或該些訊號線組110以其他導電層轉層來避免短路,在此不多加詳述。 Referring to FIG. 15, a top view of a display device 100 according to another embodiment of the present invention is shown. The display device 100 further includes a first conductive loop 116 disposed on the substrate 102 and located in the display area 104, in addition to the display area 104, the driving unit 106, and the routing area 108. Outside. As shown in FIG. 15, the first conductive ring 116 can be disposed on the substrate 102 and surround the display area 104 and connected to the driving unit 106. The driving unit 106 can provide a voltage to the first conductive ring 116 such that the first conductive ring 116 has a reference potential. It should be noted that the first conductive ring 116 overlaps the signal line groups 110 in the routing area 108, and the overlapping portion may be layered by the first conductive ring 116 or the signal line groups 110 with other conductive layers. To avoid short circuits, there is no more detail here.

根據本發明實施例,至少部份該第一導電圈116係由 複數個第一導電區塊202及複數個第二導電區塊204所構成,且該些第一導電區塊202與該些第二導電區塊204係電性連接,請參照第16A圖,係顯示第15圖所述之顯示裝置100之沿第一導電圈116切線B-B’的剖面結構示意圖。根據本發明實施例,由複數個第一導電區塊202及複數個第二導電區塊204所構成的該第一導電圈116,係配置於該顯示區104與一第一軸X垂直的兩側(即與一第二軸Y平行的兩側),值得注意的是,本實施例由於平行第一軸X的兩側配置多條資料線(未繪示),若將該第一導電圈116由複數個第一導電區塊202及複數個第二導電區塊204構成較為不易,但並不以此為限。 According to an embodiment of the invention, at least a portion of the first conductive ring 116 is A plurality of first conductive blocks 202 and a plurality of second conductive blocks 204 are formed, and the first conductive blocks 202 are electrically connected to the second conductive blocks 204. Please refer to FIG. 16A. A schematic cross-sectional view of the display device 100 of FIG. 15 along the tangent line BB' of the first conductive ring 116 is shown. According to an embodiment of the invention, the first conductive ring 116 formed by the plurality of first conductive blocks 202 and the plurality of second conductive blocks 204 is disposed on the display area 104 and perpendicular to a first axis X. The side (ie, the two sides parallel to a second axis Y), it is worth noting that, in this embodiment, a plurality of data lines (not shown) are disposed on both sides of the parallel first axis X, if the first conductive ring 116 is not easy to be formed by a plurality of first conductive blocks 202 and a plurality of second conductive blocks 204, but is not limited thereto.

由第16A圖可得知,該複數個第一導電區塊202可配 置於該基板102上。一介電層206可配置於該基板102上,並覆蓋該些第一導電區塊202。該些第二導電區塊204可配置於該介電層206上。一保護層(passivation layer)208可配置於該介電層206上,並覆蓋該些第二導電區塊204。此外,複數之第一貫孔205貫穿該介電層206及該保護層208,露出該第一導電區塊202。複數之第二貫孔207貫穿該保護層208,露出該第二導電區塊204。一導電層210,配置於該保護層208之上,並填入該第一貫孔205及該第二貫孔207,以使該些數之第一導電區塊202及該些之第二導電區塊204藉由該導電層210達成電性連結。 It can be seen from FIG. 16A that the plurality of first conductive blocks 202 can be matched. Placed on the substrate 102. A dielectric layer 206 can be disposed on the substrate 102 and cover the first conductive blocks 202. The second conductive blocks 204 can be disposed on the dielectric layer 206. A passivation layer 208 can be disposed on the dielectric layer 206 and cover the second conductive blocks 204. In addition, a plurality of first vias 205 extend through the dielectric layer 206 and the protective layer 208 to expose the first conductive block 202. A plurality of second through holes 207 extend through the protective layer 208 to expose the second conductive block 204. A conductive layer 210 is disposed on the protective layer 208 and filled in the first through hole 205 and the second through hole 207 to make the first conductive block 202 and the second conductive portion The block 204 is electrically connected by the conductive layer 210.

根據本發明實施例,該第一導電區塊202及第二導電 區塊204之材質可為單層或多層的金屬導電材料(例如:鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、 金(Au)、鎢(W)、或其合金)、金屬化合物導電材料(例如:包含鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、金(Au)、鎢(W)、鎂(Mg)、或上述組合之化合物)、或其組合,且該第一導電區塊202及第二導電區塊204之材質可為相同或不同。根據本發明實施例,該第一導電區塊202與該第一導線112可在相同製程步驟中以相同材料形成;及/或,該第二導電區塊204與該第二導線114可在相同製程步驟中以相同材料形成。該介電層206之材質可為氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合,且該介電層206與該介電層116可在相同製程步驟中以相同材料形成。該保護層208之材質可為有機之絕緣材料(光感性樹脂)或無機之絕緣材料(氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合),且該保護層208與該保護層118可在相同製程步驟中以相同材料形成。此外,該導電層210可為一單層或多層之透明導電層,其材質可例如為氧化銦錫(ITO、indium tin oxide)、氧化銦鋯(IZO、indium zinc oxide)、氧化鋁鋯(AZO、aluminum zinc oxide)、氧化鋯(ZnO、zinc oxide)、二氧化錫(SnO2)、三氧化二銦(In2O3)、或上述之組合。 According to an embodiment of the invention, the material of the first conductive block 202 and the second conductive block 204 may be a single layer or a plurality of layers of metal conductive materials (for example, aluminum (Al), copper (Cu), molybdenum (Mo), Titanium (Ti), platinum (Pt), iridium (Ir), nickel (Ni), chromium (Cr), silver (Ag), gold (Au), tungsten (W), or alloys thereof, metal compound conductive materials ( For example: including aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), platinum (Pt), iridium (Ir), nickel (Ni), chromium (Cr), silver (Ag), gold ( Au), tungsten (W), magnesium (Mg), or a combination thereof, or a combination thereof, and the materials of the first conductive block 202 and the second conductive block 204 may be the same or different. According to an embodiment of the invention, the first conductive block 202 and the first conductive line 112 may be formed of the same material in the same process step; and/or the second conductive block 204 and the second conductive line 114 may be the same The process is formed in the same material. The material of the dielectric layer 206 may be tantalum nitride, hafnium oxide, tantalum oxynitride, tantalum carbide, aluminum oxide, or a combination thereof, and the dielectric layer 206 and the dielectric layer 116 may be in the same process step. Formed from the same material. The material of the protective layer 208 may be an organic insulating material (photosensitive resin) or an inorganic insulating material (tantalum nitride, cerium oxide, cerium oxynitride, tantalum carbide, aluminum oxide, or a combination thereof), and the protection Layer 208 and the protective layer 118 can be formed of the same material in the same process step. In addition, the conductive layer 210 may be a single layer or a plurality of transparent conductive layers, and the material thereof may be, for example, indium tin oxide (ITO, indium tin oxide), indium zinc oxide (IZO, indium zinc oxide), or zirconium oxide (AZO). Aluminum zinc oxide, ZnO, zinc oxide, tin oxide (SnO 2 ), indium trioxide (In 2 O 3 ), or a combination thereof.

仍請參照第16A圖,為避免在顯示裝置製作過程中, 由於靜電累積而使顯示裝置100受損,該第一導電區塊202之長度L1可介於約10μm至10000μm之間,以及該第二導電區塊204之長度L2可介於約10μm至10000μm之間。此外,任兩相鄰第一導電區塊202係以一距離D3彼此分隔、任兩相鄰第二導電區塊204係以一距離D4彼此分隔、且任兩相鄰的第一導電區塊202及第二導電區塊204係以一距離D5相隔。其中,該距離D3係介於16μm至100μm 之間、該距離D4係介於16μm至100μm之間、以及該距離D5係介於3μm至40μm之間。 Still refer to Figure 16A, in order to avoid the display device manufacturing process, The display device 100 is damaged due to static electricity accumulation. The length L1 of the first conductive block 202 may be between about 10 μm and 10000 μm, and the length L2 of the second conductive block 204 may be between about 10 μm and 10000 μm. between. In addition, any two adjacent first conductive blocks 202 are separated from each other by a distance D3, and any two adjacent second conductive blocks 204 are separated from each other by a distance D4, and any two adjacent first conductive blocks 202 are separated from each other. And the second conductive block 204 is separated by a distance D5. Wherein the distance D3 is between 16 μm and 100 μm Between the distances D4 is between 16 μm and 100 μm, and the distance D5 is between 3 μm and 40 μm.

根據本發明另一實施例,任兩相鄰的第一導電區塊 202可直接藉由該第二導電區塊204達成電性連接。請參照第16B圖,該複數個第一導電區塊202配置於該基板102上。該介電層206配置於該基板102上,並覆蓋該些第一導電區塊202。複數之第三貫孔209貫穿該介電層206,露出該第一導電區塊202。該些第二導電區塊204配置於該介電層206上,並填入該第三貫孔209中,以使任兩相鄰的第一導電區塊202及第二導電區塊204係部份重疊,因此不需額外形成該導電層210。 According to another embodiment of the present invention, any two adjacent first conductive blocks 202 can be electrically connected directly by the second conductive block 204. Referring to FIG. 16B, the plurality of first conductive blocks 202 are disposed on the substrate 102. The dielectric layer 206 is disposed on the substrate 102 and covers the first conductive blocks 202. A plurality of third vias 209 extend through the dielectric layer 206 to expose the first conductive block 202. The second conductive block 204 is disposed on the dielectric layer 206 and filled in the third through hole 209 to make any two adjacent first conductive block 202 and second conductive block 204 The portions overlap, so that it is not necessary to additionally form the conductive layer 210.

根據本發明其他實施例,請參照第16C圖,一平坦層 212可進一步形成於該保護層208之上。複數之第四貫孔211貫穿該介電層206、該保護層208、及該平坦層212,露出該第一導電區塊202。複數之第五貫孔213貫穿該保護層208及該平坦層212,露出該第二導電區塊204。該導電層210形成於該平坦層212之上,並填入該第四貫孔211及該第五貫孔213,以使該些第一導電區塊202及該些第二導電區塊204藉由該導電層210達成電性連結。其中,該平坦層212係為一具有絕緣性質的膜層,可例如為介電材料、或光感性樹脂。 According to other embodiments of the present invention, please refer to FIG. 16C, a flat layer 212 may be further formed over the protective layer 208. A plurality of fourth through holes 211 extend through the dielectric layer 206, the protective layer 208, and the flat layer 212 to expose the first conductive block 202. A plurality of fifth through holes 213 extend through the protective layer 208 and the flat layer 212 to expose the second conductive block 204. The conductive layer 210 is formed on the flat layer 212 and fills the fourth through hole 211 and the fifth through hole 213 to borrow the first conductive block 202 and the second conductive block 204. Electrical connection is achieved by the conductive layer 210. The flat layer 212 is a film layer having an insulating property, and may be, for example, a dielectric material or a photo-sensitive resin.

請參照第17圖,係為本發明其他實施例所述之顯示 裝置100之上視圖。該顯示裝置100,除了包含該顯示區104、該驅動單元106、該走線區108、及該第一導電圈116外,更包含一第二導電圈(conductive loop)118,配置於基板102上且位於該顯示區104及該第一導電圈116外側。如第17圖所示,該第一導電圈116 可配置於該基板102上,環繞該顯示區104,並與該驅動單元106連接。該第二導電圈118可作為一靜電放電(Electrostatic Discharge、ESD)防護單元,使靜電突波無法直接損害位於顯示區104內的畫素。此外,一框膠120配置於該基板102之上,並覆蓋部份該第二導電圈118。其中,該框膠120投影至該基板102之區域係定義為封裝區(未繪示),而在該封裝區內的第二導電圈118係被該框膠120所覆蓋。 Please refer to FIG. 17, which is a display according to another embodiment of the present invention. View of device 100 above. The display device 100 further includes a second conductive loop 118 disposed on the substrate 102 in addition to the display area 104, the driving unit 106, the routing area 108, and the first conductive ring 116. The display area 104 and the first conductive ring 116 are located outside. As shown in FIG. 17, the first conductive ring 116 It can be disposed on the substrate 102, surrounds the display area 104, and is connected to the driving unit 106. The second conductive coil 118 can serve as an electrostatic discharge (ESD) protection unit, so that the electrostatic surge cannot directly damage the pixels located in the display area 104. In addition, a frame glue 120 is disposed on the substrate 102 and covers a portion of the second conductive ring 118. The area in which the sealant 120 is projected onto the substrate 102 is defined as a package area (not shown), and the second conductive ring 118 in the package area is covered by the sealant 120.

該第二導電圈118之材質可為單層或多層的金屬導 電材料(例如:鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、金(Au)、鎢(W)、或其合金)、金屬化合物導電材料(例如:包含鋁(Al)、銅(Cu)、鉬(Mo)、鈦(Ti)、鉑(Pt)、銥(Ir)、鎳(Ni)、鉻(Cr)、銀(Ag)、金(Au)、鎢(W)、鎂(Mg)、或上述組合之化合物)、或其組合。根據本發明一實施例,在形成該第一導電區塊202及第二導電區塊204時,可同時形成該第二導電圈118。此外,該框膠可為一樹脂。 The material of the second conductive ring 118 can be a single layer or multiple layers of metal guides. Electrical materials (eg, aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), platinum (Pt), iridium (Ir), nickel (Ni), chromium (Cr), silver (Ag), Gold (Au), tungsten (W), or alloys thereof, metal compound conductive materials (for example: containing aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), platinum (Pt), bismuth ( Ir), nickel (Ni), chromium (Cr), silver (Ag), gold (Au), tungsten (W), magnesium (Mg), or a combination of the above), or a combination thereof. According to an embodiment of the invention, when the first conductive block 202 and the second conductive block 204 are formed, the second conductive ring 118 can be simultaneously formed. In addition, the sealant can be a resin.

仍請參照第17圖,該顯示裝置100具有一外圍邊界 122。在該封裝區中,該框膠120與該外圍邊界122之間沒有距離(距離係為0)。請參照第18圖,係顯示第17圖所述之顯示裝置100沿切線C-C’的剖面結構示意圖。由第18圖可知,該第二導電圈118與該外圍邊界122相隔一距離D6,且該框膠120設置於該第二導電圈118上且位於該外圍邊界122內(該第二導電圈118與該外圍邊界122之間的空間係被該框膠12填滿)。值得注意的是,該距離D6係介於50-300μm,以防止第二導電圈118因水或空氣而發生腐蝕現象,降低其靜電放電(Electrostatic Discharge、ESD)防護能力。 Still referring to FIG. 17, the display device 100 has a peripheral boundary 122. In the package area, there is no distance between the sealant 120 and the peripheral boundary 122 (the distance is 0). Referring to Fig. 18, there is shown a cross-sectional structural view of the display device 100 shown in Fig. 17 along a tangential line C-C'. It can be seen from FIG. 18 that the second conductive ring 118 is separated from the peripheral boundary 122 by a distance D6, and the sealant 120 is disposed on the second conductive ring 118 and located in the peripheral boundary 122 (the second conductive ring 118 The space between the peripheral boundary 122 is filled with the sealant 12). It is worth noting that the distance D6 is between 50 and 300 μm to prevent corrosion of the second conductive coil 118 due to water or air, and to reduce its electrostatic discharge (ESD) protection capability.

為確保該第二導電圈118不會在形成框膠120時因製 程誤差使得該第二導電圈118裸露於框膠120之外。第19圖係一顯示裝置母板201的示意圖,該顯示裝置母板201經一切割製程後形成第17圖所示之顯示裝置。如第19圖所示,在形成該框膠120於基板102上時,需將該框膠120覆蓋於一預定切割道124上。因此,在沿該預定切割道124進行一切割製程時(例如為單一或多重刀片之切割程序或雷射切割程序),可確保所得之顯示裝置100(如第17圖所示)其外圍邊界與該框膠120之間沒有距離(距離係為0)。如此一來,該第二導電圈118框膠與該外圍邊界122相隔該距離D6。如第19圖所示,該框膠120可塗佈至與該外圍邊界122接觸。 In order to ensure that the second conductive ring 118 does not form in the formation of the sealant 120 The path error causes the second conductive coil 118 to be exposed outside the sealant 120. Fig. 19 is a schematic view showing a display device motherboard 201. The display device mother substrate 201 is formed into a display device shown in Fig. 17 after a cutting process. As shown in FIG. 19, when the sealant 120 is formed on the substrate 102, the sealant 120 needs to be covered on a predetermined dicing street 124. Therefore, when a cutting process is performed along the predetermined scribe line 124 (for example, a single or multiple blade cutting process or a laser cutting process), the peripheral boundary of the resulting display device 100 (as shown in FIG. 17) can be ensured. There is no distance between the sealants 120 (the distance is 0). In this way, the second conductive ring 118 is glued to the peripheral boundary 122 by the distance D6. As shown in FIG. 19, the sealant 120 can be applied to contact the peripheral boundary 122.

此外,根據本發明一實施例,在形成該框膠120於基 板102上時,即使該框膠120未塗佈至與該外圍邊界122接觸但所形成的框膠120仍覆蓋於該預定切割道124上(請參照第20圖),當沿該預定切割道124進行切割製程時,仍可得到第17圖所示之顯示裝置100。 Further, according to an embodiment of the present invention, the sealant 120 is formed on the base On the board 102, even if the sealant 120 is not applied to the peripheral boundary 122, the formed sealant 120 covers the predetermined cut track 124 (refer to Fig. 20), along the predetermined cut line. When the cutting process is performed 124, the display device 100 shown in Fig. 17 can still be obtained.

綜上所述,本發明藉由走線區內導線的集積度,降 低走線區於顯示裝置中所佔據的面積,因此可在不增加顯示裝置尺寸的前提下,提昇顯示裝置的解析度。此外,本發明所述顯示裝置可更包含一第一導電圈位於顯示區外側,其由複數之導電區塊構成,可避免在顯示裝置製作過程中,靜電累積而使顯示裝置受損。再者,本發明所述顯示裝置可更包含一第二導電圈位於顯示區外側,其中一框膠設置於該第二導電圈上且位於顯示裝置之外圍邊界內,可確保第二導電圈之抗靜電放電能力。 In summary, the present invention reduces the concentration of wires in the routing area. The low wiring area occupies an area occupied by the display device, so that the resolution of the display device can be improved without increasing the size of the display device. In addition, the display device of the present invention may further include a first conductive ring located outside the display area, which is composed of a plurality of conductive blocks, which can prevent the static electricity from accumulating and damage the display device during the manufacturing process of the display device. Furthermore, the display device of the present invention may further include a second conductive ring located outside the display area, wherein a sealant is disposed on the second conductive ring and located in a peripheral boundary of the display device to ensure the second conductive ring Antistatic discharge capability.

雖然本發明的實施例及其優點已揭露如上,但應該 瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作更動、替代與潤飾。此外,本發明之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本發明揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大抵相同功能或獲得大抵相同結果皆可根據本發明使用。因此,本發明之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外,每一申請專利範圍構成個別的實施例,且本發明之保護範圍也包括各個申請專利範圍及實施例的組合。 Although embodiments of the invention and its advantages have been disclosed above, It is to be understood that any person skilled in the art can make modifications, substitutions and refinements without departing from the spirit and scope of the invention. In addition, the scope of the present invention is not limited to the processes, machines, manufacture, compositions, devices, methods, and steps in the specific embodiments described in the specification. Any one of ordinary skill in the art can. The processes, machines, fabrications, compositions, devices, methods, and procedures that are presently or in the future are understood to be used in accordance with the present invention as long as they can perform substantially the same function or achieve substantially the same results in the embodiments described herein. Accordingly, the scope of the invention includes the above-described processes, machines, manufactures, compositions, devices, methods, and steps. In addition, the scope of each of the claims constitutes an individual embodiment, and the scope of the invention also includes the combination of the scope of the application and the embodiments.

100‧‧‧顯示裝置 100‧‧‧ display device

101‧‧‧第一基板 101‧‧‧First substrate

103‧‧‧第二基板 103‧‧‧second substrate

104‧‧‧顯示畫素區 104‧‧‧ Displaying the pixel area

105‧‧‧非顯示區 105‧‧‧Non-display area

120‧‧‧框膠 120‧‧‧Box glue

126‧‧‧第一透明基板 126‧‧‧First transparent substrate

128‧‧‧遮光層 128‧‧‧ shading layer

130‧‧‧彩色濾光層 130‧‧‧Color filter layer

130A‧‧‧彩色濾光層 130A‧‧‧Color filter layer

130B‧‧‧彩色濾光層 130B‧‧‧Color filter layer

130C‧‧‧彩色濾光層 130C‧‧‧Color filter layer

130D‧‧‧第一彩色濾光層 130D‧‧‧First color filter layer

132‧‧‧平坦層 132‧‧‧flat layer

134‧‧‧第二透明基板 134‧‧‧Second transparent substrate

136‧‧‧絕緣層 136‧‧‧Insulation

138‧‧‧液晶材料 138‧‧‧Liquid crystal materials

140‧‧‧間隔牆 140‧‧‧ partition wall

142‧‧‧主間隔物 142‧‧‧Main spacer

148‧‧‧第一配向層 148‧‧‧First alignment layer

150‧‧‧第二配向層 150‧‧‧Second alignment layer

D7‧‧‧距離 D7‧‧‧ distance

D8‧‧‧距離 D8‧‧‧ distance

W4‧‧‧寬度 W4‧‧‧Width

W5‧‧‧寬度 W5‧‧‧Width

W8‧‧‧寬度 W8‧‧‧Width

G1‧‧‧第一間隙 G1‧‧‧ first gap

S1‧‧‧第一側 S1‧‧‧ first side

S2‧‧‧第二側 S2‧‧‧ second side

H1‧‧‧高度 H1‧‧‧ Height

H2‧‧‧高度 H2‧‧‧ Height

H3‧‧‧高度 H3‧‧‧ Height

H4‧‧‧高度 H4‧‧‧ Height

H5‧‧‧高度 H5‧‧‧ height

H6‧‧‧距離 H6‧‧‧ distance

H7‧‧‧距離 H7‧‧‧ distance

T1‧‧‧厚度 T1‧‧‧ thickness

T2‧‧‧厚度 T2‧‧‧ thickness

Claims (20)

一種顯示裝置,包括:一第一基板,包括一顯示畫素區;一第二基板,與該第一基板相對設置;一框膠(sealant),設於該第一基板與該第二基板之間,且位於該顯示畫素區外側;及一間隔牆(photo spacer wall),設於該第一基板與該第二基板之間且位於該顯示畫素區及該框膠之間,其中對於同一個間隔牆而言,該間隔牆之一第一側係靠近該顯示畫素區,該間隔牆之一第二側係靠近該框膠,且該第一側之高度大於該第二側之高度。 A display device includes: a first substrate comprising a display pixel region; a second substrate disposed opposite the first substrate; a sealant disposed on the first substrate and the second substrate And a photo spacer wall disposed between the first substrate and the second substrate and between the display pixel area and the sealant, wherein In the same partition wall, a first side of the partition wall is adjacent to the display pixel area, and a second side of the partition wall is adjacent to the sealant, and the height of the first side is greater than the second side height. 如申請專利範圍第1項所述之顯示裝置,其中該第一側之高度與該第二側之高度的差值為0.01μm至0.3μm。 The display device of claim 1, wherein a difference between a height of the first side and a height of the second side is 0.01 μm to 0.3 μm. 如申請專利範圍第1項所述之顯示裝置,其中該間隔牆之寬度為10μm至200μm。 The display device of claim 1, wherein the partition wall has a width of 10 μm to 200 μm. 如申請專利範圍第1項所述之顯示裝置,其中該第一側至該顯示畫素區之距離為20μm至200μm。 The display device of claim 1, wherein the distance from the first side to the display pixel area is from 20 μm to 200 μm. 如申請專利範圍第1項所述之顯示裝置,其中該框膠之寬度為200μm至900μm。 The display device of claim 1, wherein the sealant has a width of 200 μm to 900 μm. 如申請專利範圍第1項所述之顯示裝置,更包括一主間隔物(main photo spacer),位於該第一基板與該第二基板之間且設於該顯示畫素區內,其中該主間隔物之高度高於該間隔牆之高度。 The display device of claim 1, further comprising a main photo spacer disposed between the first substrate and the second substrate and disposed in the display pixel region, wherein the main The height of the spacer is higher than the height of the partition wall. 如申請專利範圍第1項所述之顯示裝置,其中該間隔牆位 於該第一基板上,該間隔牆與該第二基板間具有一第一間隙,該第一間隙之高度為0.1μm至1.5μm。 The display device of claim 1, wherein the partition wall On the first substrate, a gap is formed between the partition wall and the second substrate, and the height of the first gap is 0.1 μm to 1.5 μm. 如申請專利範圍第1項所述之顯示裝置,其中該間隔牆位於該第二基板上,該間隔牆與該第一基板間具有一第二間隙,該第二間隙之高度為0.1μm至1.5μm。 The display device of claim 1, wherein the partition wall is located on the second substrate, the partition wall and the first substrate have a second gap, and the height of the second gap is 0.1 μm to 1.5 Mm. 如申請專利範圍第1項所述之顯示裝置,其中該框膠自該第二側向該第一側延伸之距離為該間隔牆之寬度的20%-90%。 The display device of claim 1, wherein the sealant extends from the second side to the first side at a distance of 20% to 90% of the width of the partition wall. 如申請專利範圍第1項所述之顯示裝置,其中該間隔牆包括一轉角區以及一長條區,其中該轉角區之寬度與該長條區之寬度不同。 The display device of claim 1, wherein the partition wall comprises a corner area and a strip area, wherein the width of the corner area is different from the width of the strip area. 如申請專利範圍第10項所述之顯示裝置,其中該轉角區之寬度大於該長條區之寬度。 The display device of claim 10, wherein the width of the corner area is greater than the width of the strip area. 如申請專利範圍第10項所述之顯示裝置,其中該轉角區之寬度小於該長條區之寬度。 The display device of claim 10, wherein the corner area has a width smaller than a width of the strip area. 如申請專利範圍第1項所述之顯示裝置,該第一基板更包括一平坦層,且該間隔牆位於該平坦層上。 The display device of claim 1, wherein the first substrate further comprises a flat layer, and the partition wall is located on the flat layer. 如申請專利範圍第13項所述之顯示裝置,更包括一第一配向層,設於該平坦層上且覆蓋該間隔牆,其中該第一配向層位於該平坦層上之厚度大於該第一配向層位於該間隔牆上之厚度。 The display device of claim 13 further comprising a first alignment layer disposed on the planar layer and covering the spacer, wherein the first alignment layer is located on the planar layer and has a thickness greater than the first The thickness of the alignment layer on the partition wall. 如申請專利範圍第1項所述之顯示裝置,該第二基板更包括一絕緣層,且該間隔牆位於該絕緣層上。 The display device of claim 1, wherein the second substrate further comprises an insulating layer, and the spacer is located on the insulating layer. 如申請專利範圍第15項所述之顯示裝置,更包括一第二 配向層,設於該絕緣層上且覆蓋該間隔牆,其中該第二配向層位於該絕緣層上之厚度大於該第二配向層位於該間隔牆上之厚度。 The display device according to claim 15 of the patent application, further comprising a second An alignment layer is disposed on the insulating layer and covering the partition wall, wherein a thickness of the second alignment layer on the insulating layer is greater than a thickness of the second alignment layer on the partition wall. 如申請專利範圍第1項所述之顯示裝置,該第一基板更包括一第一彩色濾光層對應於該間隔牆下方。 The display device of claim 1, wherein the first substrate further comprises a first color filter layer corresponding to the lower portion of the partition wall. 如申請專利範圍第17項所述之顯示裝置,其中該第一彩色濾光層之寬度小於該間隔牆之寬度。 The display device of claim 17, wherein the width of the first color filter layer is smaller than the width of the partition wall. 如申請專利範圍第17項所述之顯示裝置,其中該第一彩色濾光層之寬度大於該間隔牆之寬度。 The display device of claim 17, wherein the width of the first color filter layer is greater than the width of the partition wall. 如申請專利範圍第17項所述之顯示裝置,該第一基板更包括一第二彩色濾光層對應於該間隔牆下方,其中該第一彩色濾光層與該第二彩色濾光層之交界對應於該間隔牆下方。 The display device of claim 17, wherein the first substrate further comprises a second color filter layer corresponding to the lower portion of the partition wall, wherein the first color filter layer and the second color filter layer are The junction corresponds to the underside of the partition wall.
TW103137140A 2014-03-14 2014-10-28 Display device TWI571682B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US14/656,414 US9632375B2 (en) 2014-03-14 2015-03-12 Display device
US14/656,363 US9513514B2 (en) 2014-03-14 2015-03-12 Display device
US14/656,461 US9507222B2 (en) 2014-03-14 2015-03-12 Display device
US15/270,438 US10324345B2 (en) 2014-03-14 2016-09-20 Display device and display substrate
US15/297,651 US9690145B2 (en) 2014-03-14 2016-10-19 Display device
US16/401,413 US10642118B2 (en) 2014-03-14 2019-05-02 Display substrate and display device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461952929P 2014-03-14 2014-03-14
US201461989046P 2014-05-06 2014-05-06
US201462019993P 2014-07-02 2014-07-02

Publications (2)

Publication Number Publication Date
TW201535028A TW201535028A (en) 2015-09-16
TWI571682B true TWI571682B (en) 2017-02-21

Family

ID=54695192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103137140A TWI571682B (en) 2014-03-14 2014-10-28 Display device

Country Status (1)

Country Link
TW (1) TWI571682B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681560B (en) * 2019-04-23 2020-01-01 立景光電股份有限公司 Display panel and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683671B1 (en) * 1999-07-09 2004-01-27 Kabushiki Kaisha Toshiba Liquid crystal display device with spacers on color filters outside display area and method of manufacturing the same
US6870591B2 (en) * 2003-01-21 2005-03-22 Chunghwa Picture Tubes, Ltd. Liquid crystal display with separating wall
TW200712614A (en) * 2005-09-20 2007-04-01 Chi Mei Optoelectronics Corp Liquid crystal display panel and manufacturing method of substrate thereof
TW201005360A (en) * 2008-07-22 2010-02-01 Au Optronics Corp Matrix substrate and liquid crystal display panel
US7705957B2 (en) * 2006-01-03 2010-04-27 Himax Display, Inc. Liquid crystal panel having multiple spacer walls

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683671B1 (en) * 1999-07-09 2004-01-27 Kabushiki Kaisha Toshiba Liquid crystal display device with spacers on color filters outside display area and method of manufacturing the same
US6870591B2 (en) * 2003-01-21 2005-03-22 Chunghwa Picture Tubes, Ltd. Liquid crystal display with separating wall
TW200712614A (en) * 2005-09-20 2007-04-01 Chi Mei Optoelectronics Corp Liquid crystal display panel and manufacturing method of substrate thereof
US7705957B2 (en) * 2006-01-03 2010-04-27 Himax Display, Inc. Liquid crystal panel having multiple spacer walls
TW201005360A (en) * 2008-07-22 2010-02-01 Au Optronics Corp Matrix substrate and liquid crystal display panel

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681560B (en) * 2019-04-23 2020-01-01 立景光電股份有限公司 Display panel and manufacturing method thereof

Also Published As

Publication number Publication date
TW201535028A (en) 2015-09-16

Similar Documents

Publication Publication Date Title
TWI537656B (en) Display device
US9690145B2 (en) Display device
US9750140B2 (en) Display device
CN109387985B (en) Display device
JP5392670B2 (en) Liquid crystal display device and manufacturing method thereof
US9513514B2 (en) Display device
JP4952425B2 (en) Liquid crystal device and electronic device
CN100428037C (en) Liquid crystal display device and fabricating method thereof
US10324345B2 (en) Display device and display substrate
JP5100968B2 (en) Thin film transistor display panel and liquid crystal display device including the same
TWI664480B (en) Display device
TWI552125B (en) Display device and test pad thereof
TWI441198B (en) Panel and method for fabricating the same
WO2014034512A1 (en) Thin film transistor substrate and display device
JP4016955B2 (en) ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
TW201508601A (en) Touch panel and touch display panel
CN104914628B (en) Display device
TWI569079B (en) Display device
JP2010072527A (en) Liquid crystal display device
TWI571682B (en) Display device
JP2009151285A (en) Liquid crystal display device and method for manufacturing the same
JP2011013450A (en) Liquid crystal display device and method of manufacturing the same
KR20120007323A (en) Liquid crystal display device having high aperture ratio and fabricating method of the same
TWI551920B (en) Display device
KR20120061507A (en) Fringe Horizontal Electric Field Type Liquid Crystal Display Device And Method For Manufacturing The Same