TWI568806B - 含聚矽氮烷被覆組成物 - Google Patents

含聚矽氮烷被覆組成物 Download PDF

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Publication number
TWI568806B
TWI568806B TW100100458A TW100100458A TWI568806B TW I568806 B TWI568806 B TW I568806B TW 100100458 A TW100100458 A TW 100100458A TW 100100458 A TW100100458 A TW 100100458A TW I568806 B TWI568806 B TW I568806B
Authority
TW
Taiwan
Prior art keywords
molecular weight
perhydropolyazane
coating
composition
oxide film
Prior art date
Application number
TW100100458A
Other languages
English (en)
Chinese (zh)
Other versions
TW201132716A (en
Inventor
林昌伸
Original Assignee
默克專利有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 默克專利有限公司 filed Critical 默克專利有限公司
Publication of TW201132716A publication Critical patent/TW201132716A/zh
Application granted granted Critical
Publication of TWI568806B publication Critical patent/TWI568806B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Element Separation (AREA)
TW100100458A 2010-01-07 2011-01-06 含聚矽氮烷被覆組成物 TWI568806B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010001883A JP5172867B2 (ja) 2010-01-07 2010-01-07 ポリシラザンを含むコーティング組成物

Publications (2)

Publication Number Publication Date
TW201132716A TW201132716A (en) 2011-10-01
TWI568806B true TWI568806B (zh) 2017-02-01

Family

ID=44435640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100100458A TWI568806B (zh) 2010-01-07 2011-01-06 含聚矽氮烷被覆組成物

Country Status (4)

Country Link
JP (1) JP5172867B2 (https=)
KR (1) KR101711662B1 (https=)
CN (1) CN102153951B (https=)
TW (1) TWI568806B (https=)

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JP6107188B2 (ja) * 2012-03-13 2017-04-05 セントラル硝子株式会社 防曇膜形成材料、防曇膜形成用塗布液、防曇性物品、及びそれらの製法
KR101556672B1 (ko) 2012-12-27 2015-10-01 제일모직 주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법
US20140322486A1 (en) * 2013-04-30 2014-10-30 Shigeto Kobori Method for preparing modified silica film, coating liquid for the same and modified silica film prepared from the same
JP2014213318A (ja) * 2013-04-30 2014-11-17 チェイル インダストリーズインコーポレイテッド 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜
JP6104785B2 (ja) 2013-12-09 2017-03-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法
JP6198685B2 (ja) * 2014-07-01 2017-09-20 国立大学法人東京工業大学 ポリベンゾオキサジン−シリカ複合体およびその製造方法
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
KR101806328B1 (ko) * 2014-10-07 2017-12-07 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
KR102066271B1 (ko) * 2017-04-18 2020-01-14 단국대학교 천안캠퍼스 산학협력단 정전척 실링방법
WO2019065035A1 (ja) * 2017-09-27 2019-04-04 信越化学工業株式会社 含フッ素コーティング剤組成物、表面処理剤及び物品
CN108329506A (zh) * 2018-03-01 2018-07-27 苏州维洛克电子科技有限公司 含全氢聚硅氮烷-尿素涂层的聚酯薄膜的制备方法
KR102432933B1 (ko) 2019-05-17 2022-08-12 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 그로부터 형성된 실리카 막, 및 상기 실리카 막을 포함하는 전자 소자
KR102094647B1 (ko) * 2019-10-31 2020-03-31 화성이엔씨(주) 상온포장 가능한 이액형 미끄럼방지 차열포장재 및 이의 제조방법
CN110925779A (zh) * 2019-12-11 2020-03-27 大连东泰产业废弃物处理有限公司 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法
JP7222948B2 (ja) 2020-04-23 2023-02-15 信越化学工業株式会社 高硬度皮膜形成用コーティング剤組成物
JP2022036556A (ja) * 2020-08-24 2022-03-08 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング ポリシラザン、およびそれを含むシリカ質膜形成組成物、ならびにそれを用いたシリカ質膜の製造方法
KR102265267B1 (ko) * 2021-01-13 2021-06-17 (주)에스케이솔라에너지 건축물에 적용 가능한 컬러태양광모듈
KR102253483B1 (ko) * 2021-01-13 2021-05-20 (주)에스케이솔라에너지 건축물에 적용 가능하고 효율이 개선된 컬러태양광모듈
CN119350970A (zh) * 2024-10-29 2025-01-24 无锡聚合高新材料科技有限公司 一种应用于石油炼化设备耐超高温重防腐涂料、制备方法及其涂布方法
CN120230292B (zh) * 2025-05-30 2025-08-15 中国科学院化学研究所 一种含硅聚合物在纳米沟槽结构填充中的应用及含硅聚合物与制备方法

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TW200947613A (en) * 2008-02-29 2009-11-16 Az Electronic Materials Japan The method for forming siliceous film and siliceous film formed thereof

Also Published As

Publication number Publication date
JP5172867B2 (ja) 2013-03-27
CN102153951A (zh) 2011-08-17
KR101711662B1 (ko) 2017-03-02
TW201132716A (en) 2011-10-01
CN102153951B (zh) 2015-03-25
KR20110081043A (ko) 2011-07-13
JP2011142207A (ja) 2011-07-21

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