TWI563756B - Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer - Google Patents

Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

Info

Publication number
TWI563756B
TWI563756B TW103145138A TW103145138A TWI563756B TW I563756 B TWI563756 B TW I563756B TW 103145138 A TW103145138 A TW 103145138A TW 103145138 A TW103145138 A TW 103145138A TW I563756 B TWI563756 B TW I563756B
Authority
TW
Taiwan
Prior art keywords
blocking layer
emitting devices
cavity surface
current blocking
defined current
Prior art date
Application number
TW103145138A
Other languages
Chinese (zh)
Other versions
TW201624860A (en
Inventor
Ping-Hui Yeh
meng-chun Yu
Jia-Huan Lin
Ching-Chin Huang
Original Assignee
Nat Taiwan University Of Sience And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Taiwan University Of Sience And Technology filed Critical Nat Taiwan University Of Sience And Technology
Priority to TW103145138A priority Critical patent/TWI563756B/en
Publication of TW201624860A publication Critical patent/TW201624860A/en
Application granted granted Critical
Publication of TWI563756B publication Critical patent/TWI563756B/en

Links

TW103145138A 2014-12-24 2014-12-24 Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer TWI563756B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103145138A TWI563756B (en) 2014-12-24 2014-12-24 Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103145138A TWI563756B (en) 2014-12-24 2014-12-24 Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

Publications (2)

Publication Number Publication Date
TW201624860A TW201624860A (en) 2016-07-01
TWI563756B true TWI563756B (en) 2016-12-21

Family

ID=56984878

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145138A TWI563756B (en) 2014-12-24 2014-12-24 Method to fabricate gan-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

Country Status (1)

Country Link
TW (1) TWI563756B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891298A (en) * 1995-08-31 1999-04-06 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
TW200536107A (en) * 2004-04-08 2005-11-01 Renesas Tech Corp Semiconductor memory device
JP2008205054A (en) * 2007-02-17 2008-09-04 Seiko Instruments Inc Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891298A (en) * 1995-08-31 1999-04-06 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
TW200536107A (en) * 2004-04-08 2005-11-01 Renesas Tech Corp Semiconductor memory device
JP2008205054A (en) * 2007-02-17 2008-09-04 Seiko Instruments Inc Semiconductor device

Also Published As

Publication number Publication date
TW201624860A (en) 2016-07-01

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