TWI561659B - Pvd rf dc open/closed loop selectable magnetron - Google Patents

Pvd rf dc open/closed loop selectable magnetron

Info

Publication number
TWI561659B
TWI561659B TW103103239A TW103103239A TWI561659B TW I561659 B TWI561659 B TW I561659B TW 103103239 A TW103103239 A TW 103103239A TW 103103239 A TW103103239 A TW 103103239A TW I561659 B TWI561659 B TW I561659B
Authority
TW
Taiwan
Prior art keywords
magnetron
pvd
selectable
open
closed loop
Prior art date
Application number
TW103103239A
Other languages
English (en)
Other versions
TW201432079A (zh
Inventor
Keith A Miller
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201432079A publication Critical patent/TW201432079A/zh
Application granted granted Critical
Publication of TWI561659B publication Critical patent/TWI561659B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW103103239A 2013-02-07 2014-01-28 Pvd rf dc open/closed loop selectable magnetron TWI561659B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/761,267 US9249500B2 (en) 2013-02-07 2013-02-07 PVD RF DC open/closed loop selectable magnetron

Publications (2)

Publication Number Publication Date
TW201432079A TW201432079A (zh) 2014-08-16
TWI561659B true TWI561659B (en) 2016-12-11

Family

ID=51258378

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103103239A TWI561659B (en) 2013-02-07 2014-01-28 Pvd rf dc open/closed loop selectable magnetron

Country Status (5)

Country Link
US (1) US9249500B2 (zh)
KR (1) KR101725431B1 (zh)
CN (1) CN104969331B (zh)
TW (1) TWI561659B (zh)
WO (1) WO2014123662A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9178077B2 (en) 2012-11-13 2015-11-03 Micron Technology, Inc. Semiconductor constructions
JP6359118B2 (ja) * 2014-12-03 2018-07-18 株式会社アルバック ターゲットアッセンブリ
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
WO2017005291A1 (en) * 2015-07-06 2017-01-12 Applied Materials, Inc. Deposition source for sputter deposition, deposition apparatus and method of assembling the source
US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
US11189472B2 (en) * 2017-07-17 2021-11-30 Applied Materials, Inc. Cathode assembly having a dual position magnetron and centrally fed coolant
US11462394B2 (en) * 2018-09-28 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition apparatus and method thereof
TWI692538B (zh) * 2018-11-27 2020-05-01 財團法人金屬工業研究發展中心 超高頻反應式電漿薄膜製造設備及薄膜沉積方法
US11295938B2 (en) * 2020-06-30 2022-04-05 Applied Materials, Inc. Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof
CN111809157B (zh) * 2020-07-17 2022-11-25 北京北方华创微电子装备有限公司 半导体工艺设备及其磁控管机构
KR102220854B1 (ko) * 2020-08-10 2021-02-26 이상신 물리적 기상 증착 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102439697A (zh) * 2009-04-03 2012-05-02 应用材料公司 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
CN102459565A (zh) * 2009-06-02 2012-05-16 尹特根埃克斯有限公司 具有隔膜阀的流控设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440282B1 (en) * 1999-07-06 2002-08-27 Applied Materials, Inc. Sputtering reactor and method of using an unbalanced magnetron
US6896775B2 (en) 2002-10-29 2005-05-24 Zond, Inc. High-power pulsed magnetically enhanced plasma processing
US20050040030A1 (en) 2003-08-20 2005-02-24 Mcdonald Peter H. Method of treating sputtering target to reduce burn-in time and sputtering target thereof and apparatus thereof
US7674360B2 (en) 2003-12-12 2010-03-09 Applied Materials, Inc. Mechanism for varying the spacing between sputter magnetron and target
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
US8597479B2 (en) * 2005-02-08 2013-12-03 Tohoku Seiki Industries, Ltd. Sputtering system
US8097133B2 (en) 2005-07-19 2012-01-17 Applied Materials, Inc. Evacuable magnetron chamber
US8021527B2 (en) 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
KR20110027909A (ko) 2009-09-11 2011-03-17 (주)울텍 회전식 원통형 복수 배열 자석단을 가지고 있는 스퍼터링 마그네트론
US8580094B2 (en) 2010-06-21 2013-11-12 Applied Materials, Inc. Magnetron design for RF/DC physical vapor deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102439697A (zh) * 2009-04-03 2012-05-02 应用材料公司 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法
CN102459565A (zh) * 2009-06-02 2012-05-16 尹特根埃克斯有限公司 具有隔膜阀的流控设备

Also Published As

Publication number Publication date
TW201432079A (zh) 2014-08-16
CN104969331B (zh) 2017-11-03
US20140216923A1 (en) 2014-08-07
CN104969331A (zh) 2015-10-07
KR20150114986A (ko) 2015-10-13
KR101725431B1 (ko) 2017-04-11
WO2014123662A1 (en) 2014-08-14
US9249500B2 (en) 2016-02-02

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