TWI560839B - Semiconductor device with inductor-capacitor resonant circuit - Google Patents

Semiconductor device with inductor-capacitor resonant circuit

Info

Publication number
TWI560839B
TWI560839B TW103113947A TW103113947A TWI560839B TW I560839 B TWI560839 B TW I560839B TW 103113947 A TW103113947 A TW 103113947A TW 103113947 A TW103113947 A TW 103113947A TW I560839 B TWI560839 B TW I560839B
Authority
TW
Taiwan
Prior art keywords
inductor
semiconductor device
resonant circuit
capacitor resonant
capacitor
Prior art date
Application number
TW103113947A
Other languages
English (en)
Other versions
TW201541598A (zh
Inventor
Hsiao Tsung Yen
Yuh Sheng Jean
Ta Hsun Yeh
Original Assignee
Realtek Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54322851&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI560839(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Realtek Semiconductor Corp filed Critical Realtek Semiconductor Corp
Priority to TW103113947A priority Critical patent/TWI560839B/zh
Priority to US14/338,904 priority patent/US9590582B2/en
Publication of TW201541598A publication Critical patent/TW201541598A/zh
Application granted granted Critical
Publication of TWI560839B publication Critical patent/TWI560839B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/19011—Structure including integrated passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
TW103113947A 2014-04-16 2014-04-16 Semiconductor device with inductor-capacitor resonant circuit TWI560839B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW103113947A TWI560839B (en) 2014-04-16 2014-04-16 Semiconductor device with inductor-capacitor resonant circuit
US14/338,904 US9590582B2 (en) 2014-04-16 2014-07-23 Semiconductor device with inductor-capacitor resonant circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103113947A TWI560839B (en) 2014-04-16 2014-04-16 Semiconductor device with inductor-capacitor resonant circuit

Publications (2)

Publication Number Publication Date
TW201541598A TW201541598A (zh) 2015-11-01
TWI560839B true TWI560839B (en) 2016-12-01

Family

ID=54322851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103113947A TWI560839B (en) 2014-04-16 2014-04-16 Semiconductor device with inductor-capacitor resonant circuit

Country Status (2)

Country Link
US (1) US9590582B2 (zh)
TW (1) TWI560839B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572007B (zh) * 2014-10-06 2017-02-21 瑞昱半導體股份有限公司 積體電感結構
TWI579997B (zh) 2016-01-07 2017-04-21 Realtek Semiconductor Corp 積體電感結構
US11201125B2 (en) * 2017-02-24 2021-12-14 Advanced Semiconductor Engineering, Inc. Semiconductor package and semiconductor process
WO2019155056A1 (en) * 2018-02-11 2019-08-15 Danmarks Tekniske Universitet A power converter embodied in a semiconductor substrate member
US11309121B2 (en) * 2018-12-21 2022-04-19 Realtek Semiconductor Corp. Magnetic field efficient inductor and method thereof
US11855005B2 (en) 2021-06-21 2023-12-26 Globalfoundries U.S. Inc. Crackstop with embedded passive radio frequency noise suppressor and method
TWI774613B (zh) * 2021-11-16 2022-08-11 瑞昱半導體股份有限公司 電感裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200943707A (en) * 2007-12-28 2009-10-16 Stats Chippac Ltd Semiconductor device having balanced band-pass filter implemented with LC resonators
TW201003883A (en) * 2008-01-29 2010-01-16 Ibm On-chip integrated voltage-controlled variable inductor, methods of making and turning such variable inductors, and design structures integrating such variable inductors
TW201206059A (en) * 2010-03-30 2012-02-01 Stats Chippac Ltd Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR
TW201232579A (en) * 2011-01-19 2012-08-01 Univ Nat Taiwan Science Tech Planar ultracapacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8169050B2 (en) * 2008-06-26 2012-05-01 International Business Machines Corporation BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit
US8633777B2 (en) 2009-12-01 2014-01-21 Qualcomm Incorporated Methods and apparatus for inductors with integrated passive and active elements
US8362591B2 (en) 2010-06-08 2013-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits and methods of forming the same
US8552812B2 (en) 2010-12-09 2013-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Transformer with bypass capacitor
US9270247B2 (en) * 2013-11-27 2016-02-23 Xilinx, Inc. High quality factor inductive and capacitive circuit structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200943707A (en) * 2007-12-28 2009-10-16 Stats Chippac Ltd Semiconductor device having balanced band-pass filter implemented with LC resonators
TW201003883A (en) * 2008-01-29 2010-01-16 Ibm On-chip integrated voltage-controlled variable inductor, methods of making and turning such variable inductors, and design structures integrating such variable inductors
TW201206059A (en) * 2010-03-30 2012-02-01 Stats Chippac Ltd Semiconductor device and method of forming RF balun having reduced capacitive coupling and high CMRR
TW201232579A (en) * 2011-01-19 2012-08-01 Univ Nat Taiwan Science Tech Planar ultracapacitor

Also Published As

Publication number Publication date
TW201541598A (zh) 2015-11-01
US20150303888A1 (en) 2015-10-22
US9590582B2 (en) 2017-03-07

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