TWI560774B - Silicon dioxide layer fabricating process - Google Patents
Silicon dioxide layer fabricating processInfo
- Publication number
- TWI560774B TWI560774B TW101126656A TW101126656A TWI560774B TW I560774 B TWI560774 B TW I560774B TW 101126656 A TW101126656 A TW 101126656A TW 101126656 A TW101126656 A TW 101126656A TW I560774 B TWI560774 B TW I560774B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon dioxide
- dioxide layer
- fabricating process
- layer fabricating
- silicon
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101126656A TWI560774B (en) | 2012-07-24 | 2012-07-24 | Silicon dioxide layer fabricating process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101126656A TWI560774B (en) | 2012-07-24 | 2012-07-24 | Silicon dioxide layer fabricating process |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201405664A TW201405664A (en) | 2014-02-01 |
TWI560774B true TWI560774B (en) | 2016-12-01 |
Family
ID=50550109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101126656A TWI560774B (en) | 2012-07-24 | 2012-07-24 | Silicon dioxide layer fabricating process |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI560774B (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7402480B2 (en) * | 2004-07-01 | 2008-07-22 | Linear Technology Corporation | Method of fabricating a semiconductor device with multiple gate oxide thicknesses |
US20080217747A1 (en) * | 2006-01-20 | 2008-09-11 | International Business Machines Corporation | Introduction of metal impurity to change workfunction of conductive electrodes |
US20100184281A1 (en) * | 2009-01-16 | 2010-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for treating layers of a gate stack |
TW201041037A (en) * | 2009-03-26 | 2010-11-16 | Tokyo Electron Ltd | Method for forming a high-k gate stack with reduced effective oxide thickness |
-
2012
- 2012-07-24 TW TW101126656A patent/TWI560774B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7402480B2 (en) * | 2004-07-01 | 2008-07-22 | Linear Technology Corporation | Method of fabricating a semiconductor device with multiple gate oxide thicknesses |
US20080217747A1 (en) * | 2006-01-20 | 2008-09-11 | International Business Machines Corporation | Introduction of metal impurity to change workfunction of conductive electrodes |
US20100184281A1 (en) * | 2009-01-16 | 2010-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for treating layers of a gate stack |
TW201041037A (en) * | 2009-03-26 | 2010-11-16 | Tokyo Electron Ltd | Method for forming a high-k gate stack with reduced effective oxide thickness |
Also Published As
Publication number | Publication date |
---|---|
TW201405664A (en) | 2014-02-01 |
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