TWI560774B - Silicon dioxide layer fabricating process - Google Patents

Silicon dioxide layer fabricating process

Info

Publication number
TWI560774B
TWI560774B TW101126656A TW101126656A TWI560774B TW I560774 B TWI560774 B TW I560774B TW 101126656 A TW101126656 A TW 101126656A TW 101126656 A TW101126656 A TW 101126656A TW I560774 B TWI560774 B TW I560774B
Authority
TW
Taiwan
Prior art keywords
silicon dioxide
dioxide layer
fabricating process
layer fabricating
silicon
Prior art date
Application number
TW101126656A
Other languages
Chinese (zh)
Other versions
TW201405664A (en
Inventor
Shao Wei Wang
yu ren Wang
Chien Liang Lin
Ying Wei Yen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW101126656A priority Critical patent/TWI560774B/en
Publication of TW201405664A publication Critical patent/TW201405664A/en
Application granted granted Critical
Publication of TWI560774B publication Critical patent/TWI560774B/en

Links

TW101126656A 2012-07-24 2012-07-24 Silicon dioxide layer fabricating process TWI560774B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101126656A TWI560774B (en) 2012-07-24 2012-07-24 Silicon dioxide layer fabricating process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101126656A TWI560774B (en) 2012-07-24 2012-07-24 Silicon dioxide layer fabricating process

Publications (2)

Publication Number Publication Date
TW201405664A TW201405664A (en) 2014-02-01
TWI560774B true TWI560774B (en) 2016-12-01

Family

ID=50550109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101126656A TWI560774B (en) 2012-07-24 2012-07-24 Silicon dioxide layer fabricating process

Country Status (1)

Country Link
TW (1) TWI560774B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402480B2 (en) * 2004-07-01 2008-07-22 Linear Technology Corporation Method of fabricating a semiconductor device with multiple gate oxide thicknesses
US20080217747A1 (en) * 2006-01-20 2008-09-11 International Business Machines Corporation Introduction of metal impurity to change workfunction of conductive electrodes
US20100184281A1 (en) * 2009-01-16 2010-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for treating layers of a gate stack
TW201041037A (en) * 2009-03-26 2010-11-16 Tokyo Electron Ltd Method for forming a high-k gate stack with reduced effective oxide thickness

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402480B2 (en) * 2004-07-01 2008-07-22 Linear Technology Corporation Method of fabricating a semiconductor device with multiple gate oxide thicknesses
US20080217747A1 (en) * 2006-01-20 2008-09-11 International Business Machines Corporation Introduction of metal impurity to change workfunction of conductive electrodes
US20100184281A1 (en) * 2009-01-16 2010-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for treating layers of a gate stack
TW201041037A (en) * 2009-03-26 2010-11-16 Tokyo Electron Ltd Method for forming a high-k gate stack with reduced effective oxide thickness

Also Published As

Publication number Publication date
TW201405664A (en) 2014-02-01

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