TWI559127B - Integrated circuit with multi-functional parameter setting - Google Patents

Description

Integrated circuit with multi-function parameter setting

The invention relates to a power management integrated circuit, in particular to an integrated circuit with multi-function parameter setting and a multi-function parameter setting method thereof.

In a typical computer system, the voltage identification definition (VID) generated by the central processing unit (CPU) changes with its operating mode to dynamically adjust its operating voltage (or core voltage) to save power consumption. . When the computer system does not require a large amount of computational power consumption, the central processor generates a voltage identification code to a voltage regulator according to its operating mode. Next, the voltage regulator reduces the operating voltage of the central processor based on the voltage identification code.

Conventional integrated circuits (ICs) for voltage regulation usually have additional functions. For example, a droop function is used to sense whether there is a decay current. If the IC is equipped with additional functions for voltage adjustment, other pins are usually required, and an additional number of additional components are required to adjust the operating voltage of the CPU. However, this will cause the overall IC area to become larger and increase. Cause this.

It can be seen that with the advancement of electronic technology, the functions of ICs are also increasing. Due to the limited number of pins on the IC, some ICs cannot add other function settings with limited pins.

In view of this, the present invention proposes an integrated circuit with multi-function parameter setting and a multi-function parameter setting method thereof, thereby solving the problems described in the prior art.

The invention proposes an integrated circuit with multi-function parameter setting. The integrated circuit is coupled to the external setting unit. The integrated circuit includes a multi-function pin, a first function adjustment circuit, a second function adjustment circuit, and a switch unit. The multi-function pin is coupled to the external setting unit. The switch unit includes an operational amplifier coupled to the multi-function pin, the first function adjustment circuit, and the second function adjustment circuit. The first function adjustment circuit senses the programmable reference voltage of the external setting unit through an operation of the switching unit. The second function adjustment circuit senses the programmable reference current associated with the external setting unit through another operation of the switching unit, and the size of the programmable reference current is related to the programmable reference voltage.

In an exemplary embodiment of the invention, the switch unit further includes a first group switch and a second group switch. The control end of the first group of switches is controlled by the first control signal. The control end of the second group of switches is controlled by the second control signal. The first group of switches are not turned on during the same time as the second group of switches. The first group of switches includes first to third switches. The first end of the first switch is coupled to the first reference voltage. The second end of the first switch is coupled to the first input of the operational amplifier. The first end of the second switch is coupled to the operational amplifier The output and the second input. The second end of the second switch is coupled to the multi-function pin. The first end of the third switch is coupled to the first function adjustment circuit. The second end of the third switch is coupled to the power terminal of the operational amplifier. The second group of switches includes a plurality of switches.

In an exemplary embodiment of the invention, the second group of switches includes fourth and fifth switches. The first end of the fourth switch is coupled to the second function adjustment circuit. The second end of the fourth switch is coupled to the second input end and the output end of the operational amplifier. The first end of the fifth switch is coupled to the first input of the operational amplifier. The second end of the fifth switch is coupled to the multi-function pin.

In an exemplary embodiment of the invention, the external setting unit includes a resistor network that receives the second reference voltage and provides a programmable reference voltage to the multi-function pin.

In an exemplary embodiment of the invention, the external setting unit further includes an external setting line that connects the control end of the first group of switching units with the control end of the second group of switches.

In an exemplary embodiment of the invention, the integrated circuit further includes logic to generate the first control signal and the second control signal.

In an exemplary embodiment of the invention, the integrated circuit further includes an external setting pin, and the external setting pin is coupled to the control end of the first group switch and the control end of the second group switch. The external setting pin receives the external control signal, and the external control signal includes the first control signal and the second control signal.

In an exemplary embodiment of the invention, the first function adjustment circuit includes a first current mirror, a first current sensing circuit, and a first function setting circuit. The first current sensing circuit is coupled to the first current mirror. The first current sensing circuit is configured to sense the outgoing current and perform current comparison to generate a first parameter signal. First function setting circuit coupling The first current sensing circuit. The first function setting circuit is configured to receive the first parameter signal and react to the first parameter signal to perform the first function setting.

In an exemplary embodiment of the invention, the first current sensing circuit includes a current comparison circuit. The current comparison circuit has a plurality of preset current sources. The current comparison circuit compares the output current with the preset current sources to generate a first parameter signal, and outputs the first parameter signal to the first function setting circuit.

In an exemplary embodiment of the invention, the second function adjustment circuit includes a second current sensing circuit and a second function setting circuit. The second current sensing circuit is coupled to the switch unit and configured to sense the programmable reference current to generate a second parameter signal. The second function setting circuit is configured to receive the second parameter signal and react to the second parameter signal to perform the second function setting.

In an exemplary embodiment of the invention, the second function adjustment circuit further includes a second current mirror, a first resistor, an N-type MOS field effect transistor, and a first comparator. The first end of the second current mirror is coupled to the first working voltage. The first end of the first resistor is coupled to the switch unit. The drain of the N-type MOS field-effect transistor is coupled to the second end of the second current mirror, and the source thereof is coupled to the second end of the first resistor. The first input end of the first comparator receives the first threshold voltage, and the second input end is coupled to the source of the N-type MOS field-effect transistor and the second end of the first resistor, and the output end is coupled to the N-type gold The gate of an oxygen half field effect transistor.

In an exemplary embodiment of the invention, the second function adjustment circuit further includes a third current mirror, a second resistor, a P-type MOS field effect transistor, and a second comparator. The second end of the third current mirror is coupled to the second operating voltage. The first end of the second resistor is coupled to the switch unit. The drain of the P-type MOS field-effect transistor is coupled to the first end of the third current mirror, and the source thereof is coupled to the second end of the second resistor. First input of the second comparator The second threshold is coupled to the source of the P-type MOSFET and the second end of the second resistor, and the output is coupled to the gate of the P-type MOSFET.

The invention further provides a multi-function parameter setting method, which comprises the steps of: providing an integrated circuit, wherein the integrated circuit comprises a multi-function pin and a switch unit, wherein the multi-function pin is coupled to an external setting unit, and the switch unit comprises an operational amplifier Sensing the programmable reference voltage of the external setting unit through an operation of the switching unit, and performing the first function setting according to the programmable reference voltage; and sensing the external setting unit by another operation of the switching unit The reference current is programmed and a second function setting is performed based on the programmable reference current, wherein the programmable reference current is related to the programmable reference voltage.

Based on the above, the integrated circuit of the present invention and the multi-function parameter setting method can realize various function settings on the same multi-function pin, and effectively avoid the problem that the integrated circuit area becomes large. On the other hand, compared with the conventional method, the circuit area used in the integrated circuit of the present invention is relatively small, so that the manufacturing cost can also be reduced.

It is to be understood that the foregoing general description and claims

10, 10A‧‧‧ integrated circuit

20‧‧‧External setting unit

110, 110A‧‧‧ first function adjustment circuit

112, 122‧‧‧ Current sensing circuit

114‧‧‧First function setting circuit

116‧‧‧First current mirror

118‧‧‧ Current comparison circuit

120, 120A‧‧‧Second function adjustment circuit

124‧‧‧Second function setting circuit

126‧‧‧Voltage buffer

130‧‧‧Switch unit

132‧‧‧second current mirror

134‧‧‧third current mirror

136‧‧‧First comparator

138‧‧‧Second comparator

140‧‧‧Logical Circuit

210‧‧‧Resistor network

220‧‧‧External setting line

CS1‧‧‧First control signal

CS2‧‧‧second control signal

GND‧‧‧ ground terminal

Iocs‧‧‧current source

I1‧‧‧ Turning out current

I2‧‧‧ proportional current

I3, I4‧‧‧programizable reference current

Iref‧‧‧Preset current source

Nb‧‧‧ node

OCS/CB‧‧‧Multi-function pin

Q1‧‧‧N type gold oxide half field effect transistor

Q2‧‧‧P type gold oxide half field effect transistor

R1, R2, R3, R4‧‧‧ resistance

S_PARA1‧‧‧ first parameter signal

S_PARA2‧‧‧ second parameter signal

SPin‧‧‧ external setting pin

S1‧‧‧first group switch

S2‧‧‧Second group switch

S1_1‧‧‧first switch

S1_2‧‧‧second switch

S1_3‧‧‧ third switch

S2_1‧‧‧fourth switch

S2_2‧‧‧ fifth switch

S601~S605‧‧‧ steps of the multi-function parameter setting method according to an embodiment of the present invention

T1, T2, T3, T4, T5, T6, T7‧‧‧ time

VA‧‧‧programmable reference voltage

VCC‧‧‧ first working voltage

VR‧‧‧ voltage

Vref‧‧‧reference voltage

VS‧‧‧reference voltage

VSS‧‧‧second working voltage

V1‧‧‧first threshold voltage

V2‧‧‧second threshold voltage

The following drawings are a part of the specification of the invention, and are in the

1 is an integrated circuit of a multi-function parameter setting according to an embodiment of the invention schematic diagram.

2 and 3 are operational timing diagrams of the first group switch and the second group switch of FIG.

4 is a schematic diagram of an integrated circuit for multi-function parameter setting in accordance with another embodiment of the present invention.

FIG. 5 is a schematic diagram of an integrated circuit for multi-function parameter setting according to another embodiment of the present invention.

FIG. 6 is a flow chart of a parameter setting method according to an embodiment of the present invention.

Reference will now be made in detail to the exemplary embodiments embodiments In addition, the same or similar elements or components are used in the drawings and the embodiments to represent the same or similar parts.

1 is a schematic diagram of an integrated circuit (IC) for multi-function parameter setting according to an embodiment of the invention. Please refer to Figure 1. The integrated circuit 10 includes a multi-function pin OCS/CB, a first function adjustment circuit 110, a second function adjustment circuit 120, and a switch unit 130.

The multi-function pin OCS/CB is coupled to the external setting unit 20. The switch unit 130 includes an operational amplifier 126 coupled to the multi-function pin OCS/CB, the first function adjustment circuit 110, and the second function adjustment circuit 120. The first function adjustment circuit 110 senses the programmable reference voltage VA of the external setting unit 20 through an operation of the switch unit 130, and the second function adjustment circuit 120 senses the external setting unit 20 through another operation of the switch unit 130. Programmable reference current I3.

In the present exemplary embodiment, the switch unit 130 includes an operational amplifier 126. The first group switch S1 and the second group switch S2. The control terminal of the first group of switches S1 is controlled by the first control signal CS1. The control terminal of the second group of switches S2 is controlled by the second control signal CS2. The first group of switches S1 and the second group of switches S2 are not turned on during the same time.

The first group of switches S1 includes a first switch S1_1, a second switch S1_2, and a third switch S1_3. The first end of the first switch S1_1 is coupled to the reference voltage Vref. The second end of the first switch S1_1 is coupled to the non-inverting input of the operational amplifier 126. The first end of the second switch S1_2 is coupled to the output end of the operational amplifier 126 and the inverting input end. The second end of the second switch S1_2 is coupled to the multi-function pin OCS/CB. The first end of the third switch S1_3 is coupled to the first function adjusting circuit 110. The second end of the third switch S1_3 is coupled to the power terminal of the operational amplifier 126.

The second group switch S2 includes a fourth switch S2_1 and a fifth switch S2_2. The first end of the fourth switch S2_1 is coupled to the second function adjusting circuit 124. The second end of the fourth switch S2_1 is coupled to the inverting input terminal and the output end of the operational amplifier 126. The first end of the fifth switch S2_2 is coupled to the non-inverting input of the operational amplifier 126. The second end of the fifth switch S2_2 is coupled to the multi-function pin OCS/CB.

An external setting unit 20 is present outside the integrated circuit 10. The external setting unit 20 includes a resistor network 210 coupled to the reference voltage VS and the ground GND. The resistor network 210 has a node Nb for providing a programmable reference voltage VA to the multi-function pin OCS/CB. In this embodiment, although the resistor network 210 is a resistor R1 series resistor R2, the resistor network 210 may also connect components such as capacitors in series or in parallel to form an impedance value. The resistor network 210 of the embodiment is not limited to the above. Other changes can be made in the same way.

2 and 3 are the first group switch S1 and the second group switch S2 of FIG. Operation timing diagram, where T1 to T7 represent different times, respectively. During the same time period, the first group switch S1 and the second group switch S2 are not simultaneously turned on, so that the function setting can be performed by one of the first function adjustment circuit 110 and the second function adjustment circuit 120. In addition, during the same time period, the first group switch S1 and the second group switch S2 may not be turned on. In other words, only the first function adjustment circuit 110 or the second function adjustment circuit 120 is allowed to operate during different time periods.

For example, during the time period T1~T2, only the second group switch S2 is turned on, and the integrated circuit 10 performs a current balance (CB) function setting; during the time period T4~T5, the first group switch S1 and the second group The group switch S2 is not turned on at the same time, and the integrated circuit 10 does not perform function setting; during the time period T5 to T6, only the first group switch S1 is turned on, and the integrated circuit 10 performs an over current setting (OCS) function setting. Based on the above description, the function setting of other time persons by those skilled in the art can be known from the drawings, and thus will not be described herein.

Next, the detailed circuit of the first function adjustment circuit 110 and the second function adjustment circuit 120 shown in FIG. 1 will be described below. Please refer to Figure 1. The integrated circuit 10 can have two adjustment mechanisms.

The first function adjustment circuit 110 includes a current sensing circuit 112, a first function setting circuit 114, and a first current mirror 116. The current sensing circuit 112 is coupled between the first current mirror 116 and the first function setting circuit 114. The current sensing circuit 112 is configured to sense the proportional current I2 and perform current comparison to generate a first parameter signal S_PARA1. In the first current mirror 116, the proportional current I2 and the outgoing current I1 may be in a ratio of 1:1, so the action of the current sensing circuit 112 is equivalent to making a current comparison with the outgoing current I1. The first function setting circuit 114 receives the first parameter signal S_PARA1 and reacts to the first parameter signal S_PARA1 to perform the first function setting.

The second function adjustment circuit 120 includes a current sensing circuit 122 and a second function setting circuit 124. The current sensing circuit 122 is coupled to the switch unit 130 and is configured to sense the programmable reference current I3 to generate the second parameter signal S_PARA2. The second function setting circuit 124 receives the second parameter signal S_PARA2 and reacts to the second parameter signal S_PARA2 to perform the second function setting.

It is worth mentioning that the first parameter signal S_PARA1 and the second parameter signal S_PARA2 can be transmitted to the first function setting circuit 114 and the second function setting circuit 124, respectively, during different time periods. The first/second function setting circuit can be in the form of an analog/digital converter, current balance, output voltage offset or attenuation function. Therefore, the integrated circuit 10 can implement various function settings on the same multi-function pin OCS/CB.

Further, the integrated circuit 10 may further include a logic circuit 140. The logic circuit 140 is configured to generate the first control signal CS1 and the second control signal CS2, thereby respectively controlling the conduction states of the first group switch S1 and the second group switch S2. The present invention does not limit the detailed construction of the logic circuit 140.

4 is a schematic diagram of an integrated circuit for multi-function parameter setting in accordance with another embodiment of the present invention. Please refer to Figure 4. 4 is another embodiment derived from the architecture of FIG. 1. 4 is different from FIG. 1 in the first function adjustment circuit 110A and the second function adjustment circuit 120A.

In the first function adjustment circuit 110A, the current sensing circuit 112 includes a current comparison circuit 118. Current comparison circuit 118 has a plurality of predetermined current sources. The current comparison circuit 118 compares the proportional current I2 with the preset current source Iref. In the first current mirror 116, the turn-off current I1 and the proportional current I2 may be a ratio of 1:1, but not limited thereto. The preset current source Iref has 1 to X current sources, a total of X steps, The current comparison circuit 118 performs analog-to-digital conversion on the proportional current I2 to obtain a digital-type first parameter signal S_PARA1. The first parameter signal S_PARA1 can be expressed as the first-order set value in the X-th order. The current comparison circuit 118 outputs the first parameter signal S_PARA1 to the first function setting circuit 114.

In the second function adjustment circuit 120A, the method further includes a second current mirror 132, an N-type MOS field-effect transistor Q1, a first comparator 136, a third current mirror 134, and a P-type MOS field-effect transistor Q2. The second comparator 138, the resistor R3 and the resistor R4. The first end of the second current mirror 132 is coupled to the first working voltage VCC. The first end of the resistor R3 is coupled to the switch unit 130. The drain of the N-type MOS field-effect transistor Q1 is coupled to the second end of the second current mirror 132, and the source thereof is coupled to the second end of the resistor R. The non-inverting input terminal of the first comparator 136 receives the first threshold voltage V1, and the inverting input end is coupled to the source of the N-type MOS field-effect transistor and the second end of the resistor R, and the output end thereof is coupled to the N The gate of the type of gold oxide half field effect transistor Q1.

The second end of the third current mirror 134 is coupled to the second operating voltage VSS. The first end of the resistor R4 is coupled to the switch unit 130. The drain of the P-type MOS field-effect transistor Q2 is coupled to the first end of the third current mirror 134, and the source thereof is coupled to the second end of the resistor R4. The non-inverting input terminal of the second comparator 138 receives the second threshold voltage V2, and the inverting input end is coupled to the source of the P-type MOS field-effect transistor Q2 and the second end of the resistor R4, and the output end thereof is coupled The gate of the P-type gold-oxygen half field effect transistor Q2.

When the first group switch S1 is turned on and the second group switch S2 is not turned on, the switch unit 130 forms a buffer for voltage-to-current. Also, when the reference voltage Vref is equal to the reference voltage VS, the programmable reference voltage VA at the multi-function pin OCS/CB can be expressed as Equation 1 below.

VA = V _{OCS / CB (S1_ON)} = Vref = VS (Formula 1).

It can be seen from Equation 1 and FIG. 4 that there is no voltage difference between the two ends of the resistor R1. At this time, the current I1=Vref/R2 is turned off, so that the first function setting can be determined by adjusting the value of the resistor R2 of the resistor network 210. The function setting of the circuit 114.

When the first group switch S1 is not conducting and the second group switch S2 is turned on, the switching unit 130 forms a voltage buffer. The programmable reference voltage VA, which is located on the multi-function pin OCS/CB, and the currents 13 and I4 can be expressed as Equations 2 to 4 below, respectively.

I3=(V1-VR)/R3 (Formula 3), I4=(VR-V2)/R4 (Formula 4).

It can be seen from the contents of Equations 2 to 4 that the programmable reference voltage VA can be determined by adjusting the value of the resistor R1 or R2 of the resistor network 210. The voltage VR is equal to the programmable reference voltage VA. The size of the programmable reference current I3 or I4 is related to the programmable reference voltage VA. Therefore, the function setting of the second function setting circuit 124 is related to the programmable reference voltage VA, the first threshold voltage V1, and the second threshold voltage V2.

FIG. 5 is a schematic diagram of an integrated circuit for multi-function parameter setting according to another embodiment of the present invention. Please refer to Figure 5. FIG. 5 is another embodiment derived from the architecture of FIG. 1. 5 is different from FIG. 1 in that the integrated circuit 10A of FIG. 5 further includes an external setting pin SPin, but does not include the logic circuit 140 of FIG. The external setting pin SPin is coupled to the control ends of the first group switch S1 and the second group switch S2. The external setting pin SPin can receive the external control signal, and the external control signal includes the first control signal CS1 and the second control signal CS2.

The external setting unit 20A may include a resistance network 210 and an external setting line 220. The external setting line 220 is connected to the control terminal of the switching unit 130. The user can determine the conduction state of the first group switch S1 and the second group switch S2 by the external setting line 220. During the same time period, the first group switch S1 and the second group switch S2 are not turned on at the same time, but may not be turned on at the same time. Therefore, during different time periods, the user can enable one of the first function adjustment circuit 110 and the second function adjustment circuit 120 to perform function setting.

Based on the content disclosed in the above embodiments, a general multi-function parameter setting method can be summarized. More specifically, FIG. 6 is a flow chart showing a method for setting a multi-function parameter according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 6, the multi-function parameter setting method of this embodiment may include the following steps.

As shown in step S601, the integrated circuit 10 is provided, and the integrated circuit 10 includes a multi-function pin OCS/CB and a switch unit 130, wherein the multi-function pin OCS/CB is coupled to the external setting unit 20, and the switch unit 130 includes Operational amplifier 126.

Then, as shown in step S603, the programmable reference voltage VA of the external setting unit 20 is sensed by an operation of the switching unit 130, and the first function setting is performed according to the programmable reference voltage VA.

Then, as shown in step S605, the programmable reference current I3 of the external setting unit 20 is sensed by another operation of the switching unit 130, and the second function setting is performed according to the programmable reference current I3.

In summary, the integrated circuit 10 and the multi-function parameter setting method of the embodiment of the present invention can implement various function settings on the same multi-function pin OCS/CB, and effectively avoid the problem that the integrated circuit area becomes large. On the other hand, compared to the biography In the system, the circuit area used by the integrated circuit 10 is relatively small, so that the manufacturing cost can also be reduced.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.

S601~S605‧‧‧ steps of the multi-function parameter setting method according to an embodiment of the present invention

Claims (6)

An integrated circuit having a multi-function parameter setting is coupled to an external setting unit, the integrated circuit comprising: a multi-function pin coupled to the external setting unit; a first function adjusting circuit; and a second function adjusting circuit And a switch unit coupled to the multi-function pin, the first function adjustment circuit, and the second function adjustment circuit, wherein the first function adjustment circuit senses an external setting unit through an operation of the switch unit a programmable reference voltage, the second function adjustment circuit senses a programmable reference current associated with the external setting unit through another operation of the switching unit, and the size of the programmable reference current is programmable The reference voltage is related. The integrated circuit of claim 1, wherein the external setting unit comprises a resistor network, the resistor network receives a second reference voltage, and provides the programmable reference voltage to the multi-function pin. . The integrated circuit of claim 1, wherein the external setting unit further comprises an external setting line connecting a control end of a first group switch of the switch unit and a second group switch of the switch unit. The console. The integrated circuit of claim 1, further comprising: a logic circuit for generating a first control signal and a second control signal to the switch unit. The integrated circuit of claim 1, wherein the first function adjustment circuit comprises: a first current sensing circuit coupled to the first current mirror, the first current sensing circuit is configured to sense a turn-out current and perform current comparison to generate a first parameter signal; And a first function setting circuit coupled to the first current sensing circuit, the first function setting circuit is configured to receive the first parameter signal and react to the first parameter signal to perform a first function setting. The integrated circuit of claim 1, wherein the second function adjustment circuit comprises: a second current sensing circuit coupled to the switch unit, and configured to sense the programmable reference current to generate a second parameter setting circuit; and a second function setting circuit, configured to receive the second parameter signal and react to the second parameter signal to perform a second function setting.