TWI550624B - Memory data control method - Google Patents
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本發明係關於一種資料管控方法,尤指一種應用於記憶體並延長其使用壽命的相關技術。The present invention relates to a data management method, and more particularly to a related technique applied to a memory and extending its service life.
近年來消費者對於記憶體的使用已經相當普遍,對於記憶體是否耐用的重視程度也與日俱增,以目前市面上常見的記憶體(如快閃記憶體)而言,當使用者用於反覆讀取資料時,資料欄位出現錯誤的數量常隨著讀取次數的增加而持續累積,當一記憶體區塊(Block)的其中一分頁(Page)的錯誤資料欄位數量超過一錯誤校正碼(ECC)可校正錯誤的最大值時,該分頁將無法再使用而導致記憶體的讀寫壽命快速縮短。In recent years, consumer use of memory has become quite common, and the importance of memory for durability has increased. In the current memory (such as flash memory), when users use it for repeated reading. In the case of data, the number of errors in the data field often accumulates as the number of readings increases, when the number of error data fields in one of the pages of a memory block exceeds an error correction code ( ECC) When the maximum value of the error can be corrected, the page will no longer be used and the memory read/write life will be shortened rapidly.
如我國發明專利權第I356419號「延長多層單元快閃記憶體之使用壽命的方法」,其主要係提出一種快閃記憶體之抹寫流程以避免分頁的錯誤量過多,其包括以下步驟: 提供一多層單元快閃記憶體,包含至少一記憶區塊; 讀取該記憶區塊所儲存之一資料; 以一錯誤校正碼(ECC)單元對該資料進行錯誤校正; 當該資料之一錯誤個數超過一預設值,抹除該記憶體區塊之該資料;及 重新寫入該資料至該記憶體區塊。For example, in China's invention patent No. I356419, "Method for Extending the Service Life of Multi-Level Cell Flash Memory", it mainly proposes a flash memory wrapping process to avoid excessive error of paging, which includes the following steps: a multi-level cell flash memory comprising at least one memory block; reading one of the data stored in the memory block; error correction of the data by an error correction code (ECC) unit; when one of the data is incorrect The number exceeds a preset value, erasing the data of the memory block; and rewriting the data to the memory block.
由上述專利權可知,透過該錯誤校正碼可校正記憶體區塊之分頁的資料錯誤,但是該錯誤校正碼具有可校正錯誤的一最大值(預設值),當資料錯誤的數量超過代表該最大值的上限時,則需要執行抹除該記憶體區塊之該資料,並且重新寫入該資料至該記憶體區塊,然而,以現有技術而言,當執行抹除該記憶體區塊之資料時,必須將記憶體區塊之分頁全部抹除,相當地耗費時間;又或是先指定一區塊再執行抹除該區塊的資料,並且重新寫入該資料至該區塊,其耗費的時間更多,並且在執行抹除時亦存在破壞原本資料的風險又加速記憶體的壽命縮短;因此,上述之現有技術確實有待提出更佳解決方案的必要性。As can be seen from the above patent, the data error of the page of the memory block can be corrected by the error correction code, but the error correction code has a maximum value (preset value) of the correctable error, and when the number of data errors exceeds the representative value When the upper limit of the maximum value is used, the data of the memory block needs to be erased, and the data is rewritten to the memory block. However, in the prior art, when the memory block is erased, For the data, all the pages of the memory block must be erased, which is quite time consuming; or a block is specified first, then the data of the block is erased, and the data is rewritten into the block. It takes more time, and there is also a risk of destroying the original data when the erasure is performed, and the life of the memory is shortened; therefore, the above-mentioned prior art does have a need to propose a better solution.
有鑑於上述現有技術的不足,本發明主要目的係提供一種記憶體資料管控方法,透過增加該記憶體空間的使用率,避免資料欄位的損壞數量快速累積到極限以延長記憶體使用壽命。In view of the above deficiencies of the prior art, the main object of the present invention is to provide a memory data management method, which can increase the memory space utilization rate and avoid the number of damages of the data field to be quickly accumulated to the limit to prolong the service life of the memory.
欲達上述目的所採取的主要技術手段係令前述記憶體資料管控方法,主要係由一控制器連接一記憶體,該記憶體的每一分頁具有複數個資料欄位及複數個預留欄位,並由該控制器執行以下步驟: 接收一筆資料且產生一系統資訊,將該筆資料、該系統資訊分別寫入至該資料欄位及該預留欄位中; 讀取該系統資訊以取得一資料欄位的損壞資訊; 根據該損壞資訊將一損壞資料欄位的位址對應到該預留欄位中一備用欄位的位址;及 更新該系統資訊,以記錄該損壞資料欄位的位址與該預留欄位中該備用欄位的位址及其一對應位址關係。The main technical means to achieve the above purpose is to control the memory data control method, which is mainly connected by a controller to a memory, each page of the memory has a plurality of data fields and a plurality of reserved fields. And the controller performs the following steps: receiving a data and generating a system information, writing the data and the system information into the data field and the reserved field respectively; reading the system information to obtain Corruption information of a data field; corresponding to the address of a damaged data field to the address of a spare field in the reserved field according to the damage information; and updating the system information to record the damaged data field The address of the address and the address of the spare field in the reserved field and a corresponding address relationship thereof.
上述方法主要係由該控制器管控記憶體,該記憶體的每一分頁具有複數個資料欄位、預留欄位,其中該預留欄位供寫入系統資訊,該系統資訊具有資料欄位的損壞資訊,藉由讀取預留欄位中的系統資訊,以取得資料欄位的損壞資訊,並根據該損壞資訊的內容獲取資料欄位的損壞位址,當資料欄位的損壞數量持續上升,則依據該損壞資訊將損壞資料欄位的位址對應到該預留欄位中之備用欄位的位址,並即時更新系統資訊以利評估該記憶體之糾錯能力,避免資料欄位的損壞數量快速累積到極限,並提供多數預留欄位代替損壞資料欄位被使用,以達到延長記憶體使用壽命的目的。The above method mainly controls the memory by the controller, and each page of the memory has a plurality of data fields and reserved fields, wherein the reserved field is for writing system information, and the system information has a data field. The damage information, by reading the system information in the reserved field, to obtain the damage information of the data field, and obtaining the damaged address of the data field according to the content of the damaged information, when the damage of the data field continues If it rises, the address of the damaged data field is corresponding to the address of the spare field in the reserved field according to the damage information, and the system information is updated in time to evaluate the error correction capability of the memory, and the data column is avoided. The number of bits of damage is quickly accumulated to the limit, and most reserved fields are provided instead of the damaged data fields to achieve the purpose of extending the life of the memory.
關於本發明記憶體資料管控方法之一較佳實施例,請參考圖1所示,主要係由一控制器(圖中未示)分別連接多數記憶體(Block),該記憶體具有多數分頁(Page 0~N),其中該等分頁分別具有複數個資料欄位10及複數個預留欄位20,該等預留欄位20可供儲存一系統資訊、一錯誤校正碼(ECC)資訊、一系統管理資訊或其他資料等,並能夠由設計者任意安排該等預留欄位20所欲存放的資訊;本實施例中,複數個預留欄位20係用以代替複數個資料欄位10中一個以上的損壞資料欄位11。A preferred embodiment of the memory data management method of the present invention, as shown in FIG. 1 , is mainly connected to a majority of memory (Block) by a controller (not shown), the memory having a majority of pages ( Page 0~N), wherein the pages have a plurality of data fields 10 and a plurality of reserved fields 20, wherein the reserved fields 20 are capable of storing a system information, an error correction code (ECC) information, A system management information or other information, and can be arbitrarily arranged by the designer to store the information to be stored in the reserved field 20; in this embodiment, a plurality of reserved fields 20 are used to replace a plurality of data fields. More than one damage data field 11 in 10.
必須特別說明的是,一般資料損壞(錯誤)可透過使用該錯誤校正碼(ECC)進行修正,但是該錯誤校正碼的修正效果有一極限值,超過其極限值時,資料損壞將無法修復而導致該記憶體的分頁無法使用,本發明為要延長該記憶體的分頁之使用壽命,故使用複數個預留欄位20來替代損壞資料欄位11被使用,以增加該記憶體的分頁之使用率,更能避免該資料欄位10的損壞數量快速累積到極限,在此合先陳明。It must be specially stated that the general data damage (error) can be corrected by using the error correction code (ECC), but the correction effect of the error correction code has a limit value. When the limit value is exceeded, the data damage cannot be repaired. The paging of the memory cannot be used. In order to extend the service life of the paging of the memory, a plurality of reserved fields 20 are used instead of the damaged data field 11 to increase the use of paging of the memory. Rate, it is better to avoid the number of damages in the data field 10 to quickly accumulate to the limit.
上述控制器係用以管控該記憶體,且本實施例中該控制器係安裝一韌體(Firmware),該韌體係用以在讀取該記憶體或寫入該記憶體時,能夠重組該記憶體的該等分頁中未損壞的資料欄位10及該備用欄位22的資料順序,本實施例中該預留欄位20係具有一系統資訊欄位21及複數個備用欄位22,該系統資訊欄位21係存放上述系統資訊,該系統資訊包括一損壞資訊及一錯誤校正碼(ECC)資訊,而該等備用欄位22係分別用以取代複數個資料欄位10中的損壞資料欄位11。The controller is configured to control the memory, and in the embodiment, the controller is installed with a firmware, and the tough system is capable of recombining the memory when the memory is read or written into the memory. The data field 10 of the undamaged data field and the data field of the spare field 22 in the page of the memory, the reserved field 20 in the embodiment has a system information field 21 and a plurality of spare fields 22, The system information field 21 stores the above system information, the system information includes a damage information and an error correction code (ECC) information, and the spare fields 22 are used to replace the damage in the plurality of data fields 10, respectively. Data field 11.
當該控制器接收一筆以上的資料且分別對應產生該系統資訊,並將該筆資料寫入該記憶體的該等資料欄位10,以及將該系統資訊寫入至該預留欄位20中的系統資訊欄位21,藉由讀取該系統資訊欄位21中的系統資訊以取得該資料欄位10的損壞資訊,並根據該損壞資訊的內容獲取資料欄位10的損壞位址,並進一步的由控制器讀取該系統資訊中的錯誤校正碼(ECC),根據該錯誤校正碼的內容,獲得該資料欄位10的損壞位址以及損壞數量。When the controller receives more than one piece of data and correspondingly generates the system information, and writes the data to the data field 10 of the memory, and writes the system information into the reserved field 20 The system information field 21 obtains the damage information of the data field 10 by reading the system information in the system information field 21, and obtains the damaged address of the data field 10 according to the content of the damaged information, and Further, an error correction code (ECC) in the system information is read by the controller, and according to the content of the error correction code, the damaged address of the data field 10 and the number of damages are obtained.
為說明如何避免資料欄位10的損壞數量快速累積到極限,請參考圖2所示,其中包括一水平軸以及一垂直軸,該水平軸代表記憶體的糾錯能力,該垂直軸係代表一損壞數量,本實施例中該記憶體的損壞數量可構成一誤碼率(Bit Error Rate),當該記憶體的資料欄位10之損壞數量持續上升,使得其誤碼率亦極速上升至一第一預設值T1,由該控制器判斷該損壞資訊中的損壞數量是否達到該第一預設值T1,若是,則依據該損壞資訊將損壞資料欄位11的位址對應到該預留欄位22中之一備用欄位的位址,以多數預留欄位22代替損壞資料欄位11被使用;To illustrate how to avoid the rapid accumulation of the damage of the data field 10 to the limit, please refer to FIG. 2, which includes a horizontal axis and a vertical axis, the horizontal axis represents the error correction capability of the memory, and the vertical axis represents a The number of damages, the number of damages of the memory in this embodiment may constitute a bit error rate. When the number of damages in the data field 10 of the memory continues to rise, the error rate also rises to one. The first preset value T1 is determined by the controller whether the number of damages in the damage information reaches the first preset value T1, and if so, the address of the damaged data field 11 is corresponding to the reservation according to the damage information. The address of one of the spare fields in the field 22 is replaced by the majority of the reserved field 22 instead of the damaged data field 11;
再透過該控制器即時更新系統資訊,並記錄該損壞資料欄位11的位址與該預留欄位22中該備用欄位的位址及其一對應位址關係,透過前述即時判斷損壞數量是否達到該第一預設值T1,以避免資料欄位10的損壞數量快速的累積到一代表極限值的第二預設值T2,延長到達第二預設值T2的時間以增加該記憶體的錯誤校正碼之糾錯能力,以達到延長記憶體使用壽命的目的;本實施例中,該第一預設值T1、該第二預設值T2係分別根據該控制器的一錯誤校正碼之糾錯能力所設定,當該第一預設值T1為40(50、60、70)、該第二預設值為80,該控制器的錯誤校正碼之糾錯能力則可分別為百分之40至80之間、百分之50至80之間、百分之60至80之間或百分之70至80之間。Then, the system information is updated in real time through the controller, and the address of the damaged data field 11 and the address of the spare field in the reserved field 22 and a corresponding address relationship thereof are recorded, and the number of damages is determined through the foregoing instant determination. Whether the first preset value T1 is reached, so as to prevent the damage quantity of the data field 10 from rapidly accumulating to a second preset value T2 representing a limit value, and extending the time to reach the second preset value T2 to increase the memory The error correction capability of the error correction code is used for the purpose of extending the service life of the memory; in this embodiment, the first preset value T1 and the second preset value T2 are respectively based on an error correction code of the controller. The error correction capability is set. When the first preset value T1 is 40 (50, 60, 70) and the second preset value is 80, the error correction capability of the controller's error correction code can be 100. It is between 40 and 80, between 50 and 80, between 60 and 80 or between 70 and 80.
為進一步說明本發明記憶體資料管控方法的具體應用方式,於上述控制器連接該記憶體後,該記憶體的每一分頁皆具有複數個資料欄位10及複數個預留欄位20,請參閱圖3所示,前述該控制器進一步執行以下步驟: 接收一筆資料且產生一系統資訊,將該筆資料、該系統資訊分別寫入至該資料欄位10及該預留欄位20中(S31); 讀取該系統資訊以取得一資料欄位10的損壞資訊(S32); 根據該損壞資訊將一損壞資料欄位11的位址對應到該預留欄位20中一備用欄位的位址(S33);及 更新該系統資訊,以記錄該損壞資料欄位11的位址與該預留欄位20中該備用欄位的位址及其一對應位址關係(S34)。To further illustrate the specific application mode of the memory data management method of the present invention, after the controller is connected to the memory, each page of the memory has a plurality of data fields 10 and a plurality of reserved fields 20, Referring to FIG. 3, the controller further performs the following steps: receiving a piece of data and generating a system information, and writing the piece of data and the system information into the data field 10 and the reserved field 20 respectively ( S31); reading the system information to obtain the damage information of the data field 10 (S32); according to the damage information, the address of the damaged data field 11 is corresponding to a spare field in the reserved field 20. Address (S33); and updating the system information to record the address of the damaged data field 11 and the address of the spare field in the reserved field 20 and a corresponding address relationship thereof (S34).
本實施例中,於執行前述步驟時該控制器可接受一讀取記憶體指令,當該控制器收到該讀取記憶體指令時,如圖4所示,並由該控制器執行一讀取記憶體之步驟,該方法更包括以下步驟: 依據該系統資訊取得該資料欄位10的損壞資訊及其對應位址關係(S41); 讀取該記憶體分頁中未損壞的資料欄位10的資料及該備用欄位的資料(S42)。In this embodiment, when performing the foregoing steps, the controller can accept a read memory instruction, when the controller receives the read memory instruction, as shown in FIG. 4, and the controller performs a read. Step of taking the memory, the method further comprises the steps of: obtaining the damage information of the data field 10 and the corresponding address relationship according to the system information (S41); reading the uncorrupted data field in the memory page 10 Information and information on the alternate field (S42).
當執行前述步驟時該控制器又可接受一寫入記憶體指令,當該控制器收到該寫入記憶體指令時,如圖5所示,並由該控制器執行一寫入記憶體之步驟,該方法更包括以下步驟: 依據該系統資訊取得該資料欄位10的損壞資訊及其位址對應資訊(S51); 將資料寫入到該記憶體分頁中未損壞的資料欄位10及該備用欄位(S52)。When performing the foregoing steps, the controller can further accept a write memory instruction. When the controller receives the write memory instruction, as shown in FIG. 5, and the controller executes a write memory. The method further includes the following steps: obtaining the damage information of the data field 10 and the address corresponding information according to the system information (S51); writing the data to the uncorrupted data field 10 of the memory page and The alternate field (S52).
於上述各步驟分別執行至「依據該系統資訊取得該資料欄位10的損壞資訊及其位址對應資訊(S41)(S51)」步驟時,如圖6所示,本實施例中進一步的包括以下步驟: 讀取該系統資訊中的一錯誤校正碼(S61); 根據該錯誤校正碼的內容,獲得該資料欄位10的損壞位址以及損壞數量(S62)。In the above steps, the steps of "removing the damage information of the data field 10 and the address corresponding information (S41) (S51) according to the system information" are respectively performed, as shown in FIG. The following steps: reading an error correction code in the system information (S61); according to the content of the error correction code, obtaining the damaged address of the data field 10 and the number of damages (S62).
透過上述控制器即時地更新該系統資訊,獲得該資料欄位10的損壞位址以及損壞數量,並記錄該損壞資料欄位11的位址與該預留欄位20中該備用欄位的位址及其一對應位址關係,當上述步驟執行至「讀取該系統資訊以取得一資料欄位10的損壞資訊(S32)」步驟時,如圖7所示,該方法進一步包括以下步驟: 判斷該損壞資訊中的一損壞數量是否達到一預設值(S71); 若達到該預設值,則執行「根據該損壞資訊將一損壞資料欄位11的位址對應到該預留欄位20中一備用欄位的位址(S33)」之步驟。Instantly updating the system information through the controller, obtaining the damaged address and the damage quantity of the data field 10, and recording the address of the damaged data field 11 and the spare field in the reserved field 20. The address and its corresponding address relationship, when the above steps are performed to the step of "reading the system information to obtain the damage information of a data field 10 (S32)", as shown in FIG. 7, the method further includes the following steps: Determining whether a number of damages in the damage information reaches a preset value (S71); if the preset value is reached, performing "corresponding to the address of a damaged data field 11 according to the damage information to the reserved field Step 20: Address of a spare field (S33).
透過前述即時判斷損壞數量是否達到該預設值以避免資料欄位10的損壞數量快速的累積到極限,以達到延長記憶體使用壽命的目的,本實施例中該預設值包括一第一預設值T1、一第二預設值T2,透過前述即時判斷損壞數量是否達到該第一預設值T1,若是則立即將損壞資料欄位11的位址對應到該預留欄位20中備用欄位22的位址,以避免資料欄位10的損壞數量快速的累積到一代表極限值的第二預設值T2,能夠延長損壞數量攀升到第二預設值T2的時間以確實增加該記憶體的錯誤校正碼之糾錯能力。If the number of the damages reaches the preset value, the number of the damages of the data field 10 is quickly accumulated to the limit, so as to achieve the purpose of extending the service life of the memory. In this embodiment, the preset value includes a first pre-preparation. The value T1 and the second preset value T2 are set to determine whether the damaged quantity reaches the first preset value T1 through the foregoing instant, and if yes, the address of the damaged data field 11 is immediately mapped to the reserved field 20 for use. The address of the field 22 is to prevent the number of damages of the data field 10 from rapidly accumulating to a second preset value T2 representing a limit value, and it is possible to extend the time when the damage amount climbs to the second preset value T2 to actually increase the number of times. The error correction capability of the error correction code of the memory.
10 資料欄位 11 損壞資料欄位 20 預留欄位 21 系統資訊欄位 22 備用欄位10 Data field 11 Damage data field 20 Reserved field 21 System information field 22 Reserved field
圖1 係本發明一較佳實施例之記憶體資料空間示意圖。 圖2 係本發明一較佳實施例之延長使用壽命曲線圖。 圖3 係本發明一較佳實施例之記憶體資料管控方法流程圖。 圖4 係本發明一較佳實施例之讀取記憶體流程圖。 圖5 係本發明一較佳實施例之寫入記憶體流程圖。 圖6 係本發明一較佳實施例之獲取損壞位址數量流程圖。 圖7 係本發明一較佳實施例之評估糾錯能力流程圖。1 is a schematic diagram of a memory data space in accordance with a preferred embodiment of the present invention. 2 is a graph showing the extended service life of a preferred embodiment of the present invention. 3 is a flow chart of a memory data management method according to a preferred embodiment of the present invention. 4 is a flow chart of a read memory in accordance with a preferred embodiment of the present invention. Figure 5 is a flow chart of a write memory in accordance with a preferred embodiment of the present invention. 6 is a flow chart showing the number of corrupted addresses obtained in a preferred embodiment of the present invention. 7 is a flow chart of evaluating error correction capability in accordance with a preferred embodiment of the present invention.
10 資料欄位 11 損壞資料欄位 20 預留欄位 21 系統資訊欄位 22 備用欄位10 Data field 11 Damage data field 20 Reserved field 21 System information field 22 Reserved field
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