TWI545692B - Tungsten film forming method - Google Patents
Tungsten film forming method Download PDFInfo
- Publication number
- TWI545692B TWI545692B TW101124039A TW101124039A TWI545692B TW I545692 B TWI545692 B TW I545692B TW 101124039 A TW101124039 A TW 101124039A TW 101124039 A TW101124039 A TW 101124039A TW I545692 B TWI545692 B TW I545692B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- tungsten film
- etching
- film
- tungsten
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Description
本發明是有關在形成於基板的孔中埋入鎢膜之鎢膜的成膜方法。 The present invention relates to a film forming method for embedding a tungsten film of a tungsten film in a hole formed in a substrate.
在半導體裝置的製造工程中，為了埋入配線間的凹部(通孔)或基板接觸用的凹部(接觸孔)而使用鎢(W)膜。 In the manufacturing process of a semiconductor device, a tungsten (W) film is used in order to embed a recess (through hole) between wirings or a recess (contact hole) for substrate contact.
鎢(W)的成膜方法，過去是使用物理性蒸鍍(PVD)，但W為高融點金屬，及PVD難以對應於近年來裝置的微細化之高覆蓋(coverage)等的理由，可對應於高覆蓋且可充分地對應於裝置的微細化之化學性蒸鍍法(CVD)成為主流。藉由CVD來形成W膜時，是使用例如六氟化鎢(WF6)作為原料氣體及還元氣體的H2氣體，藉由在晶圓上使反應成WF6+3H2→W+6HF來成膜。藉此，即使在微細的孔也可幾乎以100%的階梯覆蓋(step coverage)來成膜。 In the film forming method of tungsten (W), physical vapor deposition (PVD) has been used in the past, but W is a high melting point metal, and PVD is difficult to cope with the high coverage of the device in recent years, and the like. Chemical vapor deposition (CVD), which corresponds to high coverage and can sufficiently correspond to the miniaturization of the device, has become mainstream. When the W film is formed by CVD, H 2 gas such as tungsten hexafluoride (WF 6 ) is used as a source gas and a reductive gas, and the reaction is made into WF 6 +3H 2 →W+6HF on the wafer. Film formation. Thereby, even in the fine holes, film formation can be performed with almost 100% step coverage.
然而，隨著最近孔的高深寬比化，有時孔的中央部會因彎曲(bowing)而鼓起，此情況，即使階梯覆蓋為100%，也會在埋入的鎢膜的中央部不可避免地產生孔隙或接縫。在產生如此的孔隙或接縫時，孔隙或接縫會因為成膜後的CMP而露出，使半導體性能受到壞影響。 However, with the recent high aspect ratio of the hole, sometimes the central portion of the hole is bulged by bowing. In this case, even if the step coverage is 100%, it is not possible at the center of the buried tungsten film. Avoid creating voids or seams. When such voids or seams are created, voids or seams are exposed by CMP after film formation, which adversely affects semiconductor performance.
作為可解除如此不良情況的技術，有在埋入鎢膜之後 ，使NF3氣體電漿化來蝕刻膜的上部，然後進行填埋膜中的接縫的成膜者為人所知(專利文獻1)。 As a technique for canceling such a problem, it is known that a film of a NF 3 gas is pulverized to etch an upper portion of a film after embedding a tungsten film, and then a joint in a landfill film is formed (Patent Document 1).
又，亦有使用WF6及H2氣體作為成膜氣體來埋入鎢(W)之後，使WF6的流量變化而作為蝕刻氣體使用，蝕刻被埋入的鎢(W)的一部分而形成貫通口，然後再形成鎢(W)膜而填埋空隙的技術為人所知(專利文獻2)。 In addition, WF 6 and H 2 gas are used as a film forming gas to embed tungsten (W), and the flow rate of WF 6 is changed to be used as an etching gas, and a part of the buried tungsten (W) is etched to form a through. A technique of forming a tungsten (W) film and filling a void is known (Patent Document 2).
又，亦有交替進行朝孔中的鎢(W)成膜，及ClF3氣體的蝕刻，而不使產生懸突(overhang)地將鎢(W)埋入孔的技術為人所知(專利文獻3)。 Further, there is a technique in which tungsten (W) is formed in a film alternately, and etching of ClF 3 gas is performed, and tungsten (W) is buried in a hole without overhanging (patent) Document 3).
[專利文獻1]日本特開2010-153852號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-153852
[專利文獻2]日本特開2010-225697號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-225697
[專利文獻3]日本特開2002-9017號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2002-9017
然而，上述專利文獻1的技術是在蝕刻使用電漿，需要個別設置成膜腔室及蝕刻腔室，處理會變繁雜，造成處理能力降低。 However, the technique of the above Patent Document 1 is that plasma is used for etching, and it is necessary to separately provide a film forming chamber and an etching chamber, and the processing becomes complicated, resulting in a decrease in processing ability.
又，上述專利文獻2的技術是將作為成膜氣體使用的WF6亦作為蝕刻氣體使用，使流量變化來切換成膜及蝕刻，但WF6的蝕刻作用不能說是一定夠充分，且因以相同的 氣體來進行成膜及蝕刻，所以控制難，確實性有問題。 Further, in the technique of Patent Document 2, WF 6 used as a film forming gas is also used as an etching gas, and the flow rate is changed to switch between film formation and etching. However, the etching action of WF 6 cannot be said to be sufficient, and Since the same gas is used for film formation and etching, control is difficult and there is a problem in reliability.
又，上述專利文獻3的技術是重複在成膜途中產生懸突的階段蝕刻而使膜平坦化的操作，藉此防止懸突部分連接而形成孔隙者，控制難，工程繁雜。並且，蝕刻的條件等也未被充分地揭示。 Moreover, the technique of the above-mentioned Patent Document 3 is an operation of repeating the step of causing the film to be flattened during the film formation to form an overhang, thereby preventing the overhang portion from being connected to form a void, which is difficult to control and complicated in engineering. Further, the conditions of etching and the like are not sufficiently revealed.
本發明是有鑑於上述情事而研發者，其課題是在於提供一種工程不繁雜，可解除埋入部分的孔隙或接縫之鎢膜的成膜方法。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for forming a tungsten film which is not complicated in engineering and which can remove voids or joints of buried portions.
本發明是在於提供一種鎢膜的成膜方法，其特徵係具有：在處理容器內，藉由CVD在具有孔的基板形成鎢膜，而於孔內形成鎢的埋入部之工程；在前述處理容器內供給ClF3氣體或F2氣體作為蝕刻氣體，而蝕刻前述埋入部的上部，形成開口之工程；及對具有形成前述開口的埋入部的基板，在前述處理容器內，藉由CVD來形成鎢膜之工程。 The present invention provides a film forming method of a tungsten film, which is characterized in that: in a processing container, a tungsten film is formed on a substrate having a hole by CVD, and a buried portion of tungsten is formed in the hole; The inside of the container is supplied with ClF 3 gas or F 2 gas as an etching gas to etch the upper portion of the embedded portion to form an opening; and the substrate having the embedded portion forming the opening is formed by CVD in the processing container. The work of tungsten film.
在本發明中，將前述蝕刻工程的前述ClF3氣體或前述F2氣體的分壓設為0.2~2666Pa的範圍為理想。並且，將前述蝕刻工程的前述處理容器內的壓力設為180~5333Pa的範圍為理想。 In the present invention, it is preferable that the partial pressure of the ClF 3 gas or the F 2 gas in the etching process be in the range of 0.2 to 2666 Pa. Further, it is preferable that the pressure in the processing container of the etching process be in the range of 180 to 5,333 Pa.
又，前述鎢膜的成膜可在250~450℃的範圍進行，前述蝕刻可在250~350℃的範圍進行。此情況，可設為前述 鎢膜的成膜時的溫度與前述蝕刻時的溫度的差為10℃以下的條件。 Further, the film formation of the tungsten film can be carried out in the range of 250 to 450 ° C, and the etching can be carried out in the range of 250 to 350 ° C. In this case, it can be set as described above. The difference between the temperature at the time of film formation of the tungsten film and the temperature at the time of the etching is 10 ° C or lower.
前述蝕刻工程可複數次重複進行蝕刻氣體的供給、及處理容器內的淨化。並且，作為前述蝕刻氣體使用的ClF3氣體或F2氣體係作為處理容器內的洗滌氣體被供給為理想。 The etching process may repeat the supply of the etching gas and the purification in the processing container in plural times. Further, a ClF 3 gas or an F 2 gas system used as the etching gas is preferably supplied as a washing gas in the processing container.
在將前述蝕刻氣體供給至前述處理容器內的供給管線連接預流管線，該預流管線係將前述處理容器旁通而連接至排氣管線，在前述蝕刻工程中，將前述蝕刻氣體流通於前述預流管線之後切換至前述供給管線而供給為理想。 Supplying the etching gas to the supply line in the processing container to connect a pre-flow line, the pre-flow line bypassing the processing container and connecting to the exhaust line, and in the etching process, the etching gas is circulated in the foregoing It is desirable to switch to the aforementioned supply line after the pre-flow line.
形成前述埋入部的工程亦可插入ClF3氣體或F2氣體的蝕刻，藉由2次以上CVD來形成鎢膜而進行。並且，對具有形成前述開口的埋入部的基板形成鎢膜之工程，及將形成埋入部的工程的鎢膜成膜之工程亦可以不同的條件進行。 The process of forming the buried portion may be performed by etching a ClF 3 gas or an F 2 gas, and forming a tungsten film by CVD twice or more. Further, the process of forming a tungsten film on the substrate having the buried portion in which the opening is formed, and the process of forming a tungsten film on which the buried portion is formed may be performed under different conditions.
鎢膜的成膜可使用WF6作為鎢原料氣體，使用H2氣體、SiH4氣體、及B2H6的其中至少1種作為還元氣體來進行。 For the film formation of the tungsten film, WF 6 can be used as the tungsten source gas, and at least one of H 2 gas, SiH 4 gas, and B 2 H 6 can be used as the reductive gas.
本發明且提供一種記憶媒體，係動作於電腦上，記憶有用以控制成膜裝置的程式之記憶媒體，其特徵為：前述程式係使電腦控制前述成膜裝置，而使能夠在實行時進行上述鎢膜的成膜方法。 The present invention further provides a memory medium that operates on a computer and memorizes a memory medium for controlling a program of the film forming apparatus, wherein the program causes the computer to control the film forming apparatus so that the above-described film forming apparatus can be performed at the time of execution. A film forming method of a tungsten film.
若根據本發明，則會在處理容器內，在具有孔的基板藉由CVD來形成鎢膜而於孔內形成鎢的埋入部，然後，對處理容器內供給ClF3氣體或F2氣體作為蝕刻氣體來蝕刻埋入部的上部，藉此形成開口，再度藉由CVD來形成鎢膜，因此可在埋入部的內部形成鎢膜，可不經由繁雜的工程來消除埋入部內部的孔隙或接縫。並且，ClF3或F2是蝕刻作用強，僅供給該等氣體便可以無電漿來容易蝕刻。而且，雖須如此使用蝕刻作用強的ClF3氣體或F2氣體來只些微蝕刻埋入部的上部，控制難，但可藉由將ClF3氣體或F2氣體的分壓調整於0.2~2666Pa的範圍來控制性佳地進行最適的蝕刻。又，由於蝕刻也在進行成膜的處理容器內進行，因此處理能力高。又，可藉由蝕刻工程來以理想的蝕刻量蝕刻形成埋入部時的鎢膜的表面而使平滑化，因此可改善鎢膜的表面形態(morphology)而使埋入性能改善，且可形成反射率高的鎢膜。 According to the present invention, in the processing container, a tungsten film is formed by CVD on a substrate having a hole, and a buried portion of tungsten is formed in the hole, and then ClF 3 gas or F 2 gas is supplied to the processing container as etching. The gas is used to etch the upper portion of the buried portion, thereby forming an opening, and the tungsten film is again formed by CVD. Therefore, a tungsten film can be formed inside the buried portion, and voids or seams in the buried portion can be eliminated without complicated work. Further, ClF 3 or F 2 has a strong etching action, and it is possible to easily etch without plasma by supplying only these gases. Moreover, although it is necessary to use a very strong etching ClF 3 gas or F 2 gas to slightly etch the upper portion of the buried portion, the control is difficult, but the partial pressure of the ClF 3 gas or the F 2 gas can be adjusted to 0.2 to 2666 Pa. The range is to control the best etch. Further, since the etching is also performed in the processing container in which the film formation is performed, the processing ability is high. Further, since the surface of the tungsten film at the time of forming the buried portion can be smoothed by etching at a desired etching amount, the surface morphology of the tungsten film can be improved, the embedding property can be improved, and reflection can be formed. High rate tungsten film.
以下，參照附圖來具體說明有關本發明的實施形態。 Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
圖1是表示用以實施本發明之鎢膜的成膜方法的成膜裝置之一例的剖面圖。 Fig. 1 is a cross-sectional view showing an example of a film forming apparatus for carrying out a film forming method of a tungsten film of the present invention.
如圖1所示，成膜裝置100是具有例如藉由鋁或鋁合金等來形成圓筒狀或箱狀的處理容器2。在此處理容器2 內，在由容器底部立起的支柱4上，經由剖面L字狀的保持構件6來設置用以載置被處理基板的半導體晶圓(以下簡稱為晶圓)S之載置台8。此支柱4及保持構件6是藉由熱線透過性的材料例如石英所構成，且載置台8是藉由厚度1mm程度之例如碳素材、鋁化合物等所構成。 As shown in FIG. 1, the film forming apparatus 100 is a processing container 2 which has a cylindrical shape or a box shape, for example, by aluminum or an aluminum alloy. Processing container 2 here In the pillar 4 which is raised from the bottom of the container, a mounting table 8 for mounting a semiconductor wafer (hereinafter simply referred to as a wafer) S on which a substrate to be processed is placed is provided via a holding member 6 having an L-shaped cross section. The support 4 and the holding member 6 are made of a material that is transparent to heat, for example, quartz, and the mounting table 8 is made of, for example, a carbon material or an aluminum compound having a thickness of about 1 mm.
在此載置台8的下方設有複數根例如3根的昇降銷10(圖示僅2根)，各昇降銷10的基端部是藉由圓弧狀的支撐構件12所支撐。在此支撐構件12安裝有貫通容器底部而設的推上棒14，推上棒14是藉由致動器(Actuator)18來昇降。而且，藉由致動器18來使推上棒14上下作動，可經由支撐構件12來使昇降銷10上下作動，使昇降銷10插通於在載置台8所貫通而設的銷孔16，而抬起晶圓S。在往推上棒14的容器底部的下方貫通的部分，為了保持處理容器2內的氣密狀態而設有可伸縮的波紋管20。 A plurality of, for example, three lift pins 10 (only two are shown) are provided below the mounting table 8, and the base end portions of the lift pins 10 are supported by the arc-shaped support members 12. Here, the support member 12 is attached with a push-up bar 14 which is provided through the bottom of the container, and the push-up bar 14 is lifted and lowered by an actuator 18. Further, the push-up bar 14 is actuated up and down by the actuator 18, and the lift pin 10 can be moved up and down via the support member 12, and the lift pin 10 can be inserted into the pin hole 16 provided through the mounting table 8, And lift the wafer S. A portion that penetrates below the bottom of the container pushing the rod 14 is provided with a bellows 20 that is expandable and contractable in order to maintain the airtight state in the processing container 2.
在載置台8的周緣部設有陶瓷製成環狀的夾緊環22，其係用以保持晶圓S的周緣部來予以固定至載置台8側，此夾緊環22是經由支撐棒24來連結至昇降銷10側，可與昇降銷10一體地昇降。昇降銷10及支撐棒24亦藉由石英等的熱線透過構件所構成。 A ring-shaped clamp ring 22 is provided on the peripheral portion of the mounting table 8 to hold the peripheral portion of the wafer S to be fixed to the mounting table 8 side. The clamp ring 22 is supported by the support rod 24 It is connected to the side of the lift pin 10, and can be raised and lowered integrally with the lift pin 10. The lift pin 10 and the support rod 24 are also constituted by a heat ray transmitting member such as quartz.
在載置台8的正下方的容器底部，由石英等的熱線透過材料所構成的透過窗26會經由O型環等的密封構件28來氣密地設置，在其下方，以能夠包圍透過窗26的方式設有箱狀的加熱室30。在此加熱室30內，作為加熱手段的複數個加熱燈32會被安裝於兼具反射鏡的旋轉台34， 此旋轉台34是藉由旋轉馬達36來旋轉。因此，藉由加熱燈32所放出的熱線會透過透過窗26來照射載置台8的下面而予以加熱。另外，加熱手段亦可取代加熱燈32，而使用埋入載置台8的電阻加熱加熱器。 The transmission window 26 made of a heat ray-permeable material such as quartz is airtightly disposed via a sealing member 28 such as an O-ring or the like at the bottom of the container directly below the mounting table 8 so as to be able to surround the transmission window 26 The box is provided with a heating chamber 30. In the heating chamber 30, a plurality of heating lamps 32 as heating means are attached to the rotating table 34 which also has a mirror. This rotary table 34 is rotated by a rotary motor 36. Therefore, the heat rays emitted by the heater lamp 32 are heated by the transmission window 26 to illuminate the lower surface of the mounting table 8. Further, instead of the heater lamp 32, the heating means may use a resistance heating heater buried in the mounting table 8.
在載置台8的外周側，具有多數個整流孔38的環狀整流板40是藉由在上下方向形成環狀的支撐圓柱42所支撐的狀態下設置。在整流板40的內周側設有與夾緊環22的外周部接觸而使氣體不會流至下方的環狀石英製配件44。 On the outer peripheral side of the mounting table 8, the annular rectifying plate 40 having a plurality of rectifying holes 38 is provided in a state of being supported by a support column 42 having an annular shape formed in the vertical direction. An annular quartz fitting 44 that is in contact with the outer peripheral portion of the clamp ring 22 so that the gas does not flow downward is provided on the inner peripheral side of the flow regulating plate 40.
在整流板40的下方的底部設有排氣口46，在此排氣口46連接排氣管52。在此排氣管52的途中設有壓力調整閥48、真空泵50。然後，藉由真空泵50來將處理容器2內抽真空，使其中維持於預定的壓力。在處理容器2的側壁設有用以對處理容器2內搬出入晶圓S的開口54，此開口54可藉由閘閥56來開閉。 An exhaust port 46 is provided at the bottom of the lower portion of the rectifying plate 40, and the exhaust port 46 is connected to the exhaust pipe 52. A pressure regulating valve 48 and a vacuum pump 50 are provided in the middle of the exhaust pipe 52. Then, the inside of the processing container 2 is evacuated by the vacuum pump 50 to maintain it at a predetermined pressure. An opening 54 for carrying in and out of the processing chamber 2 into the wafer S is provided on the side wall of the processing container 2, and the opening 54 can be opened and closed by the gate valve 56.
另一方面，在處理容器2的頂部設有用以往其中導入預定的氣體之氣體導入手段的淋浴頭60。此淋浴頭60是例如藉由鋁合金等來形成圓形箱狀，在其頂部設有氣體導入口61。在淋浴頭60的下面，均等地形成有用以放出從氣體導入口61往淋浴頭60的內部供給的氣體之多數的氣體吐出孔62，可對晶圓S上方的處理空間均等地放出氣體。在淋浴頭60的內部配設具有多數的氣體分散孔64之擴散板65，可擴散被導入至淋浴頭60內的氣體來對晶圓面更均等地供給氣體。 On the other hand, a shower head 60 using a gas introduction means for introducing a predetermined gas therein is provided at the top of the processing container 2. The shower head 60 is formed in a circular box shape by, for example, an aluminum alloy or the like, and is provided with a gas introduction port 61 at the top thereof. On the lower surface of the shower head 60, a plurality of gas discharge holes 62 for discharging a large amount of gas supplied from the gas introduction port 61 to the inside of the shower head 60 are uniformly formed, and the gas can be uniformly discharged to the processing space above the wafer S. A diffuser 65 having a plurality of gas dispersion holes 64 is disposed inside the shower head 60, and the gas introduced into the shower head 60 can be diffused to supply the gas more evenly to the wafer surface.
在氣體導入口61連接氣體供給部70的氣體配管71。氣體供給部70是具有此氣體配管71；及從氣體配管71分岐的複數的分岐配管72a~72f。而且，具有：被連接至分岐配管72a的ClF3氣體源73；被連接至分岐配管72b的WF6氣體源74；被連接至分岐配管72c的Ar氣體源75；被連接至分岐配管72d的N2氣體源76；被連接至分岐配管72e的SiH4氣體源77；被連接至分岐配管72f的H2氣體源78。 The gas pipe 71 of the gas supply unit 70 is connected to the gas introduction port 61. The gas supply unit 70 includes the gas piping 71 and a plurality of branching pipes 72a to 72f branched from the gas piping 71. Further, it has a ClF 3 gas source 73 connected to the branch pipe 72a, a WF 6 gas source 74 connected to the branch pipe 72b, an Ar gas source 75 connected to the branch pipe 72c, and a N connected to the branch pipe 72d. 2 gas source 76; SiH 4 gas source 77 connected to branching pipe 72e; H 2 gas source 78 connected to branching pipe 72f.
從ClF3氣體源73是供給使用於洗滌及蝕刻的ClF3氣體。可使用F2氣體，取代ClF3氣體。F2氣體是與ClF3氣體大致同樣的洗滌作用及蝕刻作用。並且，從WF6氣體源74是供給鎢原料的WF6氣體。亦可使用鎢羰基(W(CO)6)作為鎢原料。該情況是與WF6不同，可不使用還元劑藉由熱分解來形成鎢膜。從Ar氣體源75、N2氣體源76是供給作為淨化氣體或稀釋氣體使用的Ar氣體、N2氣體。亦可使用其他的惰性氣體作為淨化氣體或稀釋氣體。從SiH4氣體源77是供給為了鎢膜的核生成而使用的SiH4氣體。亦可使用B2H6氣體來取代SiH4氣體。而且，從H2氣體源78是供給H2氣體作為WF6的還元氣體。還元氣體，除了H2氣體以外，可使用SiH4、B2H6等。 The ClF 3 gas source 73 is supplied with ClF 3 gas for washing and etching. Instead of ClF 3 gas, F 2 gas can be used. The F 2 gas is substantially the same washing action and etching action as the ClF 3 gas. Further, the WF 6 gas source 74 is a WF 6 gas to which a tungsten raw material is supplied. A tungsten carbonyl group (W(CO) 6 ) can also be used as a tungsten raw material. In this case, unlike WF 6 , a tungsten film can be formed by thermal decomposition without using a reductant. From the Ar gas source 75, N 2 gas source 76 is supplied as a purge gas or Ar gas using a diluent gas, N 2 gas. Other inert gases may also be used as the purge gas or diluent gas. The SiH 4 gas source 77 is supplied with SiH 4 gas used for nucleation of a tungsten film. It is also possible to use a B 2 H 6 gas instead of the SiH 4 gas. Further, the H 2 gas source 78 is supplied H 2 gas as a further element of WF 6 gas. As the reducing gas, in addition to the H 2 gas, SiH 4 , B 2 H 6 or the like can be used.
在連接該等氣體源的分岐配管分別設有質量流控制器之類的流量控制器79、及其前後的開閉閥80。另外，雖未圖示，但實際在載置台8的下方空間亦設有背氣體Ar管線，供給Ar氣體作為背氣體(淨化氣體)。 A flow controller 79 such as a mass flow controller and a front and rear opening and closing valve 80 are provided in the branching pipes connecting the gas sources. Further, although not shown, a back gas Ar line is actually provided in the space below the mounting table 8, and Ar gas is supplied as a back gas (purified gas).
在分岐配管72a、72b、72e分別連接預流管線81、83、85。預流管線81、83、85是被連接至排氣管52，由流量安定等的觀點來看，在將ClF3氣體、WF6氣體、SiH4氣體流至處理容器2內之前，可預流。在預流管線81、83、85的連接部附近分別設有開閉閥82、84、86。 The pre-flow lines 81, 83, and 85 are connected to the branch pipes 72a, 72b, and 72e, respectively. The pre-flow lines 81, 83, 85 are connected to the exhaust pipe 52, and can be pre-flowed before flowing ClF 3 gas, WF 6 gas, and SiH 4 gas into the processing container 2 from the viewpoint of flow stability and the like. . Opening and closing valves 82, 84, and 86 are provided in the vicinity of the connection portions of the pre-flow lines 81, 83, and 85, respectively.
此成膜裝置100是具有用以控制成膜裝置100的各構成部例如致動器18，燈32的電源，真空泵50，質量流控制器79，閥80等的控制部90。 This film forming apparatus 100 is a control unit 90 having various components for controlling the film forming apparatus 100, such as an actuator 18, a power source of the lamp 32, a vacuum pump 50, a mass flow controller 79, a valve 80, and the like.
此控制部90是具備：控制器91，其係由實行各構成部的控制的微電腦(電腦)所構成；使用者介面92，其係由鍵盤或顯示器等所構成，該鍵盤是為了操作者管理成膜裝置100而進行指令的輸入操作等，該使用者介面92是使成膜裝置100的運轉狀況可視化而顯示者；及記憶部93，其係儲存有用以在控制器91的控制下實現在成膜裝置100所被實行的處理之控制程式，或各種資料，及按照處理條件來使處理實行於處理裝置的各構成部的程式亦即處理處方。另外，使用者介面92及記憶部93是被連接至控制器91。 The control unit 90 includes a controller 91 composed of a microcomputer (computer) that performs control of each component, and a user interface 92 that is constituted by a keyboard or a display, which is managed by an operator. The film forming apparatus 100 performs an input operation of a command, the user interface 92 displays the operation state of the film forming apparatus 100, and the memory unit 93 is stored for use under the control of the controller 91. The control program for the processing to be performed by the film forming apparatus 100, or various materials, and a program for executing the processing in each component of the processing device in accordance with the processing conditions, that is, the processing recipe. In addition, the user interface 92 and the memory unit 93 are connected to the controller 91.
上述處理處方是被記憶於記憶部93之中的記憶媒體。記憶媒體可為硬碟，或CDROM，DVD，快閃記憶體等可攜帶性者。又，亦可從其他的裝置例如經由專線來適當地傳送處方。 The above-described processing prescription is a memory medium that is memorized in the memory unit 93. The memory medium can be a hard disk, or a portable person such as a CDROM, a DVD, or a flash memory. Further, the prescription can be appropriately transmitted from another device, for example, via a dedicated line.
然後，因應所需，以來自使用者介面92的指示等，從記憶部93叫出任意的處方，而使實行於控制器91，藉此在控制器91的控制下，進行成膜裝置100之以下所示般的處理。 Then, if necessary, an arbitrary prescription is called from the storage unit 93 by an instruction from the user interface 92, and the controller 91 is executed, whereby the film forming apparatus 100 is controlled under the control of the controller 91. The processing shown below is as follows.
其次，說明有關利用以上那樣構成的成膜裝置100來進行的成膜方法的實施形態。圖2是本發明之一實施形態的成膜方法的流程圖，圖3是此時的工程剖面圖。 Next, an embodiment of a film formation method performed by the film formation apparatus 100 configured as described above will be described. Fig. 2 is a flow chart showing a film forming method according to an embodiment of the present invention, and Fig. 3 is a cross-sectional view showing the structure at this time.
首先，最初在半導體基板或下層的導電層的底層201上形成層間絶緣層202，藉由CVD來對層間絶緣層202中形成有孔(接觸孔或通孔)203的晶圓S形成鎢膜，形成填埋孔203的鎢埋入部204(參照步驟1、圖3(a))。此時的鎢膜的成膜是基本上只要供給鎢原料的WF6及還元氣體的H2，例如在溫度：250~500℃，壓力：500~66666Pa的範圍按照常法來進行即可。 First, an interlayer insulating layer 202 is initially formed on the underlayer 201 of the semiconductor substrate or the underlying conductive layer, and a tungsten film is formed on the wafer S having the holes (contact holes or via holes) 203 formed in the interlayer insulating layer 202 by CVD. The tungsten embedding portion 204 of the buried hole 203 is formed (refer to step 1, FIG. 3(a)). The film formation of the tungsten film at this time is basically as long as the WF 6 of the tungsten raw material and the H 2 of the reductive gas are supplied, for example, at a temperature of 250 to 500 ° C and a pressure of 500 to 66666 Pa in accordance with a usual method.
在步驟1之鎢膜的成膜終了的時間點，因為孔203的彎曲等的影響，在埋入部204的內部形成有孔隙(接縫)205的狀態下阻塞上部(參照圖3(a))。因此，本實施形態是在步驟1的成膜後，藉由ClF3氣體(或F2氣體)來進行蝕刻，在埋入部204的上部形成開口206(步驟2，圖3(b))。 At the time when the film formation of the tungsten film of the step 1 is completed, the upper portion is blocked in a state in which the pores (seam) 205 are formed inside the buried portion 204 due to the influence of the curvature of the hole 203 or the like (see FIG. 3(a)). . Therefore, in the present embodiment, after the film formation in the step 1, etching is performed by ClF 3 gas (or F 2 gas), and an opening 206 is formed in the upper portion of the buried portion 204 (step 2, FIG. 3(b)).
此時的蝕刻是只要能以其次的鎢膜的成膜來填埋孔隙(接縫)205的程度形成開口206即可，該情況，鎢膜的 形狀蝕刻量是例如僅1~20nm即可，因此被要求控制性高。但，ClF3氣體是作為洗滌氣體使用，其蝕刻作用極大，若以和洗滌同樣的條件進行蝕刻，則蝕刻作用會過強，控制性變差。而且，發現為了控制性佳地進行蝕刻，而使ClF3分壓形成於0.2~2666Pa的範圍為理想。更理想是0.3~8.0Pa。發現即使取代ClF3氣體，而使用F2氣體時也是同樣的範圍為理想。並且，為了控制性佳地蝕刻，處理容器2內的壓力也重要，可在10666Pa以下蝕刻。為了蝕刻埋入部204的肩口來有效地形成開口206，最好是5333Pa以下。並且，若壓力形成180Pa，則埋入部204的全體會被蝕刻成共形(Conformal)，因此壓力是180Pa以上，500Pa以上為理想。因此，只要在180~10666Pa，較理想是在180~5333Pa，更理想是在500~5333Pa之間，以能夠在埋入部204的肩口形成可形成其次的鎢膜之開口206的方式控制壓力即可。壓力的更理想的範圍是2666~4000Pa。並且，為了實現控制性佳的蝕刻，ClF3氣體的流量也重要，可以10~1000sccm(mL/min)來蝕刻。較理想是15~60sccm(mL/min)。而且，為了使蝕刻的控制性形成良好，溫度也重要，250~500℃為理想，更理想是300~350℃。 The etching at this time may be such that the opening 206 can be formed to fill the pores (joints) 205 by the formation of the second tungsten film. In this case, the shape etching amount of the tungsten film is, for example, only 1 to 20 nm. Therefore, it is required to have high controllability. However, the ClF 3 gas is used as a scrubbing gas, and its etching action is extremely large. When etching is performed under the same conditions as washing, the etching action is too strong and the controllability is deteriorated. Further, it has been found that it is preferable to form the ClF 3 partial pressure in the range of 0.2 to 2666 Pa in order to perform the etching with good controllability. More preferably, it is 0.3~8.0Pa. It has been found that the same range is preferable even when the F 2 gas is used instead of the ClF 3 gas. Further, in order to control the etching excellently, the pressure in the processing container 2 is also important, and it can be etched at 10,666 Pa or less. In order to etch the shoulder of the buried portion 204, the opening 206 is effectively formed, preferably 5333 Pa or less. Further, when the pressure is 180 Pa, the entire buried portion 204 is etched into a conformal shape. Therefore, the pressure is preferably 180 Pa or more, and preferably 500 Pa or more. Therefore, as long as it is 180 to 10666 Pa, preferably 180 to 5333 Pa, more preferably 500 to 5333 Pa, the pressure can be controlled so that the opening 206 of the tungsten film can be formed at the shoulder of the embedding portion 204. . The more desirable range of pressure is 2666~4000Pa. Further, in order to achieve good controllability etching, the flow rate of the ClF 3 gas is also important, and it can be etched at 10 to 1000 sccm (mL/min). It is preferably 15 to 60 sccm (mL/min). Further, in order to form the controllability of the etching, the temperature is also important, and it is preferably 250 to 500 ° C, more preferably 300 to 350 ° C.
此蝕刻工程是ClF3氣體的供給亦可進行一次，但由更控制性佳地進行蝕刻的觀點來看，亦可複數循環重複昇壓→ClF3流動→減壓淨化。 In the etching process, the supply of the ClF 3 gas may be performed once, but from the viewpoint of more controllable etching, the pressure may be repeated in a plurality of cycles → ClF 3 flow → decompression purification.
如此在形成開口206後，經由處理容器2內的淨化來 進行鎢成膜(步驟3，圖3(c))。藉此，可在埋入部204所形成的孔隙(接縫)205內埋入鎢，可不經由繁雜的工程來消除埋入部204的孔隙或接縫。 After the opening 206 is formed, the purification in the processing container 2 is performed. Tungsten film formation is performed (step 3, Fig. 3(c)). Thereby, tungsten can be buried in the voids (joints) 205 formed in the embedded portion 204, and the voids or seams of the embedded portion 204 can be eliminated without complicated work.
步驟1的成膜時的成膜條件與步驟3的成膜時的成膜條件可為相同或相異。由生產性的觀點來看，亦可提高步驟3的成膜時的溫度。 The film formation conditions at the time of film formation in the step 1 and the film formation conditions at the time of film formation in the step 3 may be the same or different. From the viewpoint of productivity, the temperature at the time of film formation in the step 3 can also be increased.
並且，步驟1的埋入部204的形成亦可只進行1次鎢膜的成膜，但僅1次的鎢膜的成膜，亦有埋入部204的形狀差的情況。一旦埋入部204的形狀差，則之後即使進行步驟2的蝕刻及步驟3的成膜，也恐有不完全埋入孔隙(接縫)205之虞。該情況，最好插入ClF3氣體(或F2氣體)的蝕刻，而形成2次以上鎢膜，藉此進行步驟1的埋入部204的形成。例如，藉由鎢膜的成膜→ClF3氣體(或F2氣體)蝕刻→鎢膜的成膜(成膜2次)、或鎢膜的成膜→ClF3氣體(或F2氣體)蝕刻→鎢膜的成膜→ClF3氣體(或F2氣體)蝕刻→鎢膜的成膜(成膜3次)來進行步驟1的埋入部204的形成，然後進行步驟2及步驟3為理想。藉此，鎢膜的表面會被平滑化，且埋入部204會形成均勻的形狀，藉由之後的步驟2及步驟3，可更確實地消除孔隙或接縫。此時的蝕刻是可以和步驟2的蝕刻同樣的條件進行。 Further, the formation of the buried portion 204 in the step 1 may be performed only by forming the tungsten film once, but the film formation of the tungsten film may be performed once, and the shape of the buried portion 204 may be poor. When the shape of the embedded portion 204 is poor, even if the etching in the step 2 and the film formation in the step 3 are performed, there is a fear that the pores (seam) 205 are not completely buried. In this case, it is preferable to form an etching of ClF 3 gas (or F 2 gas) to form a tungsten film twice or more, thereby forming the buried portion 204 of the step 1. For example, film formation by tungsten film→ClF 3 gas (or F 2 gas) etching→film formation of tungsten film (film formation 2 times), or film formation of tungsten film→ClF 3 gas (or F 2 gas) etching → Film formation of tungsten film → etching of ClF 3 gas (or F 2 gas) → film formation of tungsten film (film formation 3 times) to form the buried portion 204 of step 1, and then steps 2 and 3 are preferably performed. Thereby, the surface of the tungsten film is smoothed, and the buried portion 204 is formed into a uniform shape, and by the subsequent steps 2 and 3, the voids or seams can be more reliably eliminated. The etching at this time can be performed under the same conditions as the etching of the step 2.
將上述步驟2的蝕刻工程的條件彙整於以下來表示。 The conditions of the etching process of the above step 2 are summarized as follows.
溫度：250~500℃ Temperature: 250~500°C
壓力：180~10666Pa Pressure: 180~10666Pa
ClF3分壓：0.2~2666Pa ClF 3 partial pressure: 0.2~2666Pa
時間：0.5~20sec Time: 0.5~20sec
ClF3流量：10~1000sccm(mL/min) ClF 3 flow: 10~1000sccm (mL/min)
Ar流量：0~14000sccm(mL/min) Ar flow: 0~14000sccm (mL/min)
N2流量：0~10000sccm(mL/min) N 2 flow rate: 0~10000sccm (mL/min)
將以上的條件之循環重複進行1次或2次以上。 The cycle of the above conditions was repeated once or twice.
可是，通常，若經由事前未被供給氣體的氣體管線來供給氣體，則如圖4的A所示，在目標的流量安定之前，會產生約目標流量的10倍的氣體瞬間流動的波動現象。因此，若在未流動蝕刻氣體的步驟1之後，初次在步驟2流動蝕刻氣體，則會產生如此的波動。如上述般，作為蝕刻氣體使用的ClF3氣體、F2氣體由於蝕刻作用極大，因此即使是如此的瞬間性，一旦多量流動，則如圖5(a)的透過型電子顯微鏡(TEM)照片所示般，被確認出切削至鎢膜的底層的TiN膜之現象。 However, in general, when a gas is supplied through a gas line to which a gas is not supplied beforehand, as shown in A of FIG. 4, a phenomenon of instantaneous flow of gas about 10 times the target flow rate occurs before the target flow rate is stabilized. Therefore, if the etching gas is flowed in the first step after the step 1 in which the etching gas is not flowed, such fluctuation occurs. As described above, the ClF 3 gas and the F 2 gas used as the etching gas are extremely etched, and therefore, even if such a transient property occurs, a large amount of flow occurs, as shown in the transmission electron microscope (TEM) photograph of Fig. 5 (a). As shown, the phenomenon of cutting to the underlying TiN film of the tungsten film was confirmed.
如此的波動可藉由在供給氣體之前事先在氣體管線封入氣體來防止(圖4的B)。事前在氣體管線封入蝕刻氣體之後供給蝕刻氣體時，如圖5的(b)所示，未見對底層的TiN膜的侵蝕。因此，本實施形態是除了在流動WF6氣體、SiH4氣體的分岐配管72b、72e設置預流管線83、85以外，在通常不設預流管線之流動ClF3氣體的分岐配管72a也設預流管線81，經由預流管線81來進行預流，而在ClF3氣體供給管線的分岐配管72a封入ClF3氣體之後，經由分岐配管72a及氣體配管71來將蝕刻氣體供給 至處理容器2內，藉此防止如此的底層的蝕刻。 Such fluctuation can be prevented by previously sealing the gas in the gas line before supplying the gas (B of Fig. 4). When the etching gas was supplied before the gas line was sealed with the etching gas, as shown in (b) of FIG. 5, no attack on the underlying TiN film was observed. Therefore, in the present embodiment, in addition to the pre-flow lines 83 and 85 in the branch pipes 72b and 72e for flowing the WF 6 gas or the SiH 4 gas, the branch pipe 72a in which the ClF 3 gas is normally not provided in the pre-flow line is also provided. after the flow line 81, through the pre-flow line 81 to pre-flow, and the bifurcation ClF 3 gas supply line 72a enclosed ClF 3 gas pipe, via a bifurcation pipe 71 to the etching gas supplied into the processing container 2 72a and the gas pipe, This prevents etching of such a bottom layer.
使用ClF3氣體作為通常的洗滌氣體時，即使產生波動也不會有問題，因此未設ClF3氣體用的預流管線，但因為在本實施形態需要高精度蝕刻些微量的鎢膜，所以最好如此設置預流管線。 When ClF 3 gas is used as the normal washing gas, there is no problem even if fluctuation occurs. Therefore, the pre-flow line for ClF 3 gas is not provided. However, in this embodiment, it is necessary to etch a small amount of tungsten film with high precision, so the most It is good to set up the pre-flow line.
上述步驟1、3的鎢膜的成膜是只要如上述般按照常法來進行即可，但最好是採用：最初交替供給WF6氣體及SiH4氣體(或B2H6氣體)而藉由ALD(Atomic Layered Deposition)來進行核生成(Nucleation)，其次，利用WF6氣體及H2氣體，使壓力朝主成膜的壓力慢慢地上昇而進行形成鎢膜的加強成膜，在壓力到達預定值的時間點進行利用WF6氣體及H2氣體的主成膜之手法。 The film formation of the tungsten film in the above steps 1 and 3 may be carried out according to the usual method as described above, but it is preferable to use the WF 6 gas and the SiH 4 gas (or B 2 H 6 gas) alternately. Nucleation is performed by ALD (Atomic Layered Deposition), and then WF 6 gas and H 2 gas are used to gradually increase the pressure of the film toward the main film formation to form a film for strengthening the tungsten film. When the predetermined value is reached, a method of forming a main film using WF 6 gas and H 2 gas is performed.
鎢膜成膜的理想條件是如以下般。 The ideal conditions for forming a tungsten film are as follows.
溫度：250~500℃ Temperature: 250~500°C
壓力：500~10666Pa Pressure: 500~10666Pa
每1次的時間：6~15sec Every 1 time: 6~15sec
重複次數：3次 Number of repetitions: 3 times
WF6流量：50~750sccm(mL/min) WF 6 flow: 50~750sccm (mL/min)
SiH4流量：40~800sccm(mL/min) SiH 4 flow rate: 40~800sccm (mL/min)
(B2H6的情況、500~10000sccm(mL/min)) (In the case of B 2 H 6 , 500 to 10000 sccm (mL/min))
H2流量：0~12000sccm(mL/min) H 2 flow rate: 0~12000sccm (mL/min)
Ar流量：0~14000sccm(mL/min) Ar flow: 0~14000sccm (mL/min)
N2流量：0~10000sccm(mL/min) N 2 flow rate: 0~10000sccm (mL/min)
溫度：250~500℃ Temperature: 250~500°C
壓力：500~66666Pa Pressure: 500~66666Pa
WF6流量：50~750sccm(mL/min) WF 6 flow: 50~750sccm (mL/min)
SiH4流量：0~800sccm(mL/min) SiH 4 flow rate: 0~800sccm (mL/min)
H2流量：0~12000sccm(mL/min) H 2 flow rate: 0~12000sccm (mL/min)
Ar流量：0~14000sccm(mL/min) Ar flow: 0~14000sccm (mL/min)
N2流量：0~10000sccm(mL/min) N 2 flow rate: 0~10000sccm (mL/min)
另外，鎢膜成膜(步驟1及步驟3)時更理想的溫度是250~450℃，蝕刻時更理想的溫度是250~350℃，因此最好在該等的溫度範圍進行各個的工程。例如藉由將鎢膜成膜時的溫度設為410℃，將蝕刻時的溫度設為250℃，可形成良好的埋入部204。但，此情況兩者的溫度相異100℃以上，所以溫度的變更需要時間，在處理能力的面不利。因此，由使處理能力更提升的觀點來看，雖有溫度範圍偏離較佳範圍的情形，但最好將兩者設為幾乎相同的溫度(兩者的溫度差為10℃以下)，例如將鎢膜成膜設為345℃，將蝕刻設為340℃。 Further, when the tungsten film is formed (steps 1 and 3), the temperature is preferably 250 to 450 ° C, and the temperature at the time of etching is preferably 250 to 350 ° C. Therefore, it is preferable to carry out various processes in the temperature ranges. For example, by setting the temperature at the time of film formation of the tungsten film to 410 ° C and setting the temperature at the time of etching to 250 ° C, a good buried portion 204 can be formed. However, in this case, the temperatures of the two are different by 100 ° C or more. Therefore, it takes time to change the temperature, which is disadvantageous in terms of the processing ability. Therefore, from the viewpoint of improving the processing ability, although the temperature range deviates from the preferred range, it is preferable to set the two to be almost the same temperature (the temperature difference between the two is 10 ° C or less), for example, The tungsten film formation was set to 345 ° C, and the etching was set to 340 ° C.
在進行預定次數以上那樣的工程後，藉由ClF3氣體來洗滌處理容器2內。此時的條件是溫度：室溫~340℃，壓力：1333~2666Pa，ClF3流量：300~500sccm(mL/min)。 After the work of a predetermined number of times or more, the inside of the processing container 2 is washed by ClF 3 gas. The conditions at this time are temperature: room temperature ~ 340 ° C, pressure: 1333 ~ 2666 Pa, ClF 3 flow: 300 ~ 500 sccm (mL / min).
若根據本實施形態的方法，則會在接觸孔及通孔之類的孔中埋入鎢來形成埋入部，藉由ClF3氣體或F2氣體來蝕刻埋入部的上部而形成開口之後，再度形成鎢膜，因此可在埋入部的內部形成鎢膜，可不經由繁雜的工程來消除埋入部內部的孔隙或接縫。並且，ClF3或F2是蝕刻作用強，僅供給該等氣體便可以無電漿來容易蝕刻。而且，雖須如此使用蝕刻作用強的ClF3氣體或F2氣體來只些微蝕刻埋入部的上部，控制難，但可藉由將ClF3氣體或F2氣體的分壓調整於0.2~2666Pa的範圍來控制性佳地進行最適的蝕刻。又，由於蝕刻也在進行成膜的處理容器內進行，因此處理能力高。又，ClF3或F2皆是作為洗滌氣體來供給至處理容器內者，不需要新設蝕刻用的設備。又，可藉由步驟2的蝕刻來以理想的蝕刻量蝕刻在步驟1所形成的鎢膜的表面而使平滑化，因此可改善鎢膜的表面形態而使埋入性能改善，且可形成反射率高的鎢膜。 According to the method of the present embodiment, tungsten is buried in a hole such as a contact hole or a through hole to form an embedded portion, and an upper portion of the buried portion is etched by ClF 3 gas or F 2 gas to form an opening, and then re-opened. Since the tungsten film is formed, a tungsten film can be formed inside the buried portion, and voids or seams in the buried portion can be eliminated without complicated work. Further, ClF 3 or F 2 has a strong etching action, and it is possible to easily etch without plasma by supplying only these gases. Moreover, although it is necessary to use a very strong etching ClF 3 gas or F 2 gas to slightly etch the upper portion of the buried portion, the control is difficult, but the partial pressure of the ClF 3 gas or the F 2 gas can be adjusted to 0.2 to 2666 Pa. The range is to control the best etch. Further, since the etching is also performed in the processing container in which the film formation is performed, the processing ability is high. Further, both ClF 3 and F 2 are supplied as a scrubbing gas to the processing container, and a new apparatus for etching is not required. Moreover, the surface of the tungsten film formed in the step 1 can be smoothed by etching in the step 2 by a desired etching amount, so that the surface morphology of the tungsten film can be improved, the embedding property can be improved, and reflection can be formed. High rate tungsten film.
其次，說明有關實驗結果。 Second, explain the experimental results.
在此是根據以下的條件1、2，依序進行步驟1、步驟2、及步驟3而取得鎢膜。有關條件1是在步驟1中插入蝕刻來重複2次成膜，然後也形成進行步驟2及步驟3的膜。此時的蝕刻是與以下所示的步驟2同樣的條件。並且，也準備與以往同樣僅CVD的鎢膜。此時的成膜條件是與以下所示的條件1的步驟1相同的條件。 Here, the tungsten film was obtained by sequentially performing the steps 1, 2, and 3 in accordance with the following conditions 1 and 2. The condition 1 is that the film is formed by repeating the etching in the step 1 and repeating the film formation twice, and then forming the film of the steps 2 and 3. The etching at this time is the same condition as the step 2 shown below. Further, a tungsten film of only CVD is prepared in the same manner as in the related art. The film formation conditions at this time are the same conditions as the step 1 of Condition 1 shown below.
溫度：410℃ Temperature: 410 ° C
壓力：1000Pa Pressure: 1000Pa
每1循環(WF6→淨化→SiH4→淨化)的時間：6sec Time per 1 cycle (WF 6 → purification → SiH 4 → purification): 6 sec
循環數：3次 Number of cycles: 3 times
WF6流量：400sccm(mL/min) WF 6 flow: 400sccm (mL/min)
SiH4流量：400sccm(mL/min) SiH 4 flow rate: 400sccm (mL/min)
H2流量：0(mL/min) H 2 flow rate: 0 (mL/min)
Ar流量：6000sccm(mL/min) Ar flow rate: 6000sccm (mL/min)
N2流量：2000sccm(mL/min) N 2 flow rate: 2000sccm (mL/min)
溫度：410℃ Temperature: 410 ° C
壓力：1000→10666Pa Pressure: 1000→10666Pa
時間：13sec Time: 13sec
WF6流量：450sccm(mL/min) WF 6 flow: 450sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：0→3900sccm(mL/min) H 2 flow rate: 0→3900sccm (mL/min)
Ar流量：4000sccm(mL/min) Ar flow: 4000sccm (mL/min)
N2流量：2000sccm(mL/min) N 2 flow rate: 2000sccm (mL/min)
溫度：410℃ Temperature: 410 ° C
壓力：10666Pa Pressure: 10666Pa
WF6流量：450sccm(mL/min) WF 6 flow: 450sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：3900sccm(mL/min) H 2 flow rate: 3900sccm (mL/min)
Ar流量：2000sccm(mL/min) Ar flow: 2000sccm (mL/min)
N2流量：200sccm(mL/min) N 2 flow rate: 200sccm (mL/min)
溫度：250℃ Temperature: 250 ° C
壓力：5333Pa Pressure: 5333Pa
時間：3sec×10次 Time: 3sec × 10 times
ClF3流量：30sccm(mL/min) ClF 3 flow rate: 30sccm (mL/min)
Ar流量：6000sccm(mL/min) Ar flow rate: 6000sccm (mL/min)
N2流量：2000sccm(mL/min) N 2 flow rate: 2000sccm (mL/min)
溫度：345℃ Temperature: 345 ° C
壓力：2666Pa Pressure: 2666Pa
每1循環(WF6→淨化→SiH4→淨化)的時間：9sec Time per 1 cycle (WF 6 → purification → SiH 4 → purification): 9 sec
循環數：3次 Number of cycles: 3 times
WF6流量：160sccm(mL/min) WF 6 flow: 160sccm (mL/min)
SiH4流量：200sccm(mL/min) SiH 4 flow rate: 200sccm (mL/min)
H2流量：0(mL/min) H 2 flow rate: 0 (mL/min)
Ar流量：6000sccm(mL/min) Ar flow rate: 6000sccm (mL/min)
N2流量：2700sccm(mL/min) N 2 flow rate: 2700 sccm (mL/min)
溫度：345℃ Temperature: 345 ° C
壓力：2666→26666Pa Pressure: 2666 → 26666Pa
時間：13sec Time: 13sec
WF6流量：600sccm(mL/min) WF 6 flow: 600sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：0→10000sccm(mL/min) H 2 flow rate: 0 → 10000sccm (mL / min)
Ar流量：12000→2000sccm(mL/min) Ar flow rate: 12000 → 2000 sccm (mL / min)
N2流量：500sccm(mL/min) N 2 flow rate: 500sccm (mL/min)
溫度：345℃ Temperature: 345 ° C
壓力：26666Pa Pressure: 26666Pa
WF6流量：600sccm(mL/min) WF 6 flow: 600sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：10000sccm(mL/min) H 2 flow rate: 10000sccm (mL/min)
Ar流量：2000sccm(mL/min) Ar flow: 2000sccm (mL/min)
N2流量：500sccm(mL/min) N 2 flow rate: 500sccm (mL/min)
溫度：340℃ Temperature: 340 ° C
壓力：500~5333Pa Pressure: 500~5333Pa
每1次的時間：3~30sec(1次或複數循環) Every 1 time: 3~30sec (1 time or multiple cycles)
ClF3流量：30~90sccm(mL/min) ClF 3 flow: 30~90sccm (mL/min)
Ar流量：6000sccm(mL/min) Ar flow rate: 6000sccm (mL/min)
N2流量：2000sccm(mL/min) N 2 flow rate: 2000sccm (mL/min)
溫度：345℃ Temperature: 345 ° C
壓力：2666Pa Pressure: 2666Pa
每1循環(WF6→淨化→SiH4→淨化)的時間：7.5sec Time per cycle (WF 6 → purification → SiH 4 → purification): 7.5 sec
循環數：2次 Number of cycles: 2 times
WF6流量：160ccm(mL/min) WF 6 flow: 160ccm (mL / min)
SiH4流量：200sccm(mL/min) SiH 4 flow rate: 200sccm (mL/min)
H2流量：0(mL/min) H 2 flow rate: 0 (mL/min)
Ar流量：6000sccm(mL/min) Ar flow rate: 6000sccm (mL/min)
N2流量：2000sccm(mL/min) N 2 flow rate: 2000sccm (mL/min)
溫度：345→385℃ Temperature: 345→385°C
壓力：2666→26666Pa Pressure: 2666 → 26666Pa
時間：13sec Time: 13sec
WF6流量：600sccm(mL/min) WF 6 flow: 600sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：0→10000sccm(mL/min) H 2 flow rate: 0 → 10000sccm (mL / min)
Ar流量：12000→2000sccm(mL/min) Ar flow rate: 12000 → 2000 sccm (mL / min)
N2流量：500sccm(mL/min) N 2 flow rate: 500sccm (mL/min)
溫度：385℃ Temperature: 385 ° C
壓力：26666Pa Pressure: 26666Pa
WF6流量：600sccm(mL/min) WF 6 flow: 600sccm (mL/min)
SiH4流量：0sccm(mL/min) SiH 4 flow rate: 0sccm (mL/min)
H2流量：10000sccm(mL/min) H 2 flow rate: 10000sccm (mL/min)
Ar流量：2000sccm(mL/min) Ar flow: 2000sccm (mL/min)
N2流量：500sccm(mL/min) N 2 flow rate: 500sccm (mL/min)
在圖6顯示以往鎢膜利用通常的CVD來進行成膜時的埋入部的掃描型電子顯微鏡(SEM)照片，在圖7顯示使用條件1來進行鎢膜的成膜時的埋入部的SEM照片及透過型電子顯微鏡(TEM)照片，在圖8顯示使用條件2來進行鎢膜的成膜時的埋入部的SEM照片及TEM照片。另外，在圖6~8是顯示藉由CMP來研磨的線(離表面180nm)。 A scanning electron microscope (SEM) photograph of a buried portion in the conventional tungsten film formed by conventional CVD is shown in FIG. 6 , and an SEM photograph of the buried portion when the tungsten film is formed using the condition 1 is shown in FIG. 7 . And a transmission electron microscope (TEM) photograph, FIG. 8 shows an SEM photograph and a TEM photograph of the embedded portion when the tungsten film is formed using the condition 2. In addition, in FIGS. 6 to 8, the line (180 nm from the surface) polished by CMP is shown.
如圖6所示，以往僅CVD成膜時，雖可取得階梯覆蓋100%，但順著孔的彎曲而形成大的孔隙，在進行CMP 時孔隙會露出。相對的，如圖7所示般，在條件1，可以階梯覆蓋120%來埋入鎢，埋入部的孔隙等大部分會被消除，可知即使進行CMP也不會露出孔隙。特別是可確認在步驟1中插入蝕刻來重複2次成膜者是埋入部的孔隙會完全消失。並且，如圖8所示，在條件2也是埋入部的孔隙等大部分會被消除，在考量生產性的條件2也可取得與條件1同樣的埋入性能。由以上的實驗結果確認了本發明的效果。 As shown in Fig. 6, in the conventional CVD film formation, although step coverage of 100% is obtained, large pores are formed along the bending of the holes, and CMP is performed. The pores will be exposed. On the other hand, as shown in Fig. 7, in condition 1, the tungsten can be buried by 120% in steps, and the pores of the buried portion are largely eliminated, and it is understood that the pores are not exposed even when CMP is performed. In particular, it was confirmed that the insertion of the etching in the step 1 and the film formation was repeated twice, and the pores of the embedded portion completely disappeared. Further, as shown in Fig. 8, in the condition 2, most of the pores in the embedded portion are eliminated, and the embedding performance similar to the condition 1 can be obtained under the condition 2 in consideration of productivity. The effects of the present invention were confirmed from the above experimental results.
其次，說明有關在與上述條件1同樣的條件下，以各種的膜厚來形成步驟1的鎢膜之後，測定進行步驟2的ClF3的蝕刻時的鎢膜的表面粗度(形態(morphology))及反射率的結果及表面觀察結果。 Next, after describing the tungsten film of the step 1 in various film thicknesses under the same conditions as the above condition 1, the surface roughness (morphology) of the tungsten film during the etching of the ClF 3 in the step 2 is measured. And the results of reflectivity and surface observations.
圖9是表示只進行鎢膜的成膜時，及鎢膜成膜後進行ClF3的蝕刻時之膜厚與表面粗度(Rms)的關係。又，圖10是表示只進行鎢膜的成膜時，及鎢膜成膜後進行ClF3的蝕刻時之膜厚與反射率的關係。如該等的圖所示，可確認進行ClF3的蝕刻者要比僅鎢膜的成膜時，表面粗度更被改善2%，反射率更被改善4~7%。 Fig. 9 is a view showing the relationship between the film thickness and the surface roughness (Rms) when the film formation of the tungsten film is performed and the etching of the CrF 3 is performed after the tungsten film is formed. Moreover, FIG. 10 is a view showing the relationship between the film thickness and the reflectance when the film formation of the tungsten film is performed and the etching of the CrF 3 is performed after the tungsten film is formed. As shown in the above figures, it was confirmed that when the etching of the ClF 3 was performed, the surface roughness was improved by 2% and the reflectance was further improved by 4 to 7%.
圖11是僅鎢膜的成膜時，及鎢膜成膜後進行ClF3的蝕刻時之膜的掃描型顯微鏡(SEM)照片。又，圖12是僅鎢膜的成膜時，及鎢膜成膜後進行ClF3的蝕刻時之膜的原子間力顯微鏡(AFM)照片。如圖11的SEM照片所示，可知比起(a)之僅鎢膜的成膜時(膜厚75nm)，(b)之進行蝕刻時(膜厚80nm)表面較平順。又，如圖12 的AFM照片所示，可確認比起(a)之僅鎢膜的成膜時(膜厚75nm)，(b)之進行蝕刻時(膜厚80nm)結晶粒較大，凹凸亦少。 Fig. 11 is a scanning electron microscope (SEM) photograph of a film when a tungsten film is formed and a film of a tungsten film is formed and then ClF 3 is etched. Moreover, FIG. 12 is an atomic force microscope (AFM) photograph of the film when the tungsten film is formed, and when the tungsten film is formed and the ClF 3 is etched. As shown in the SEM photograph of Fig. 11, it was found that the surface of the tungsten film (a film thickness: 75 nm) when (a) was formed, and the surface (b) having a film thickness of (b) was smooth. Moreover, as shown in the AFM photograph of Fig. 12, it was confirmed that the film formation was performed at the time of film formation (b) of the tungsten film (a) (b), and the grain size was large (b) There are also few.
由以上的結果可想像，藉由ClF3的蝕刻，凸部會被削去，比前端部更廣的剖面會出現於表面，其結果反射率會變高，形態被改善。 From the above results, it is conceivable that the convex portion is scraped off by etching of ClF 3 , and a wider cross section than the front end portion appears on the surface, and as a result, the reflectance becomes high and the morphology is improved.
以上，說明有關本發明的實施形態，但本發明並非限於上述實施形態，亦可實施各種的變形。例如，成膜時的原料並非限於上述者，只要是可形成鎢膜者即可，例如亦可使用鎢羰基(W(CO)6)來熱分解而形成鎢膜。又，雖成膜裝置記載使用WF6氣體及H2氣體來形成鎢膜者，但並非限於此，只要是依照所使用的氣體來選擇最適的裝置即可。又，上述實施形態是舉半導體晶圓為例作為被處理基板來進行說明，但半導體晶圓可為矽，或GaAs、SiC、GaN等的化合物半導體，且並非限於半導體晶圓，使用在液晶顯示裝置等的FPD(平板顯示器)的玻璃基板，或陶瓷基板等亦可使用本發明。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made. For example, the material at the time of film formation is not limited to the above, and any tungsten film may be formed. For example, a tungsten film may be thermally decomposed using a tungsten carbonyl group (W(CO) 6 ) to form a tungsten film. Further, although the film forming apparatus describes the use of WF 6 gas and H 2 gas to form a tungsten film, the present invention is not limited thereto, and any suitable device may be selected in accordance with the gas to be used. Further, in the above embodiment, a semiconductor wafer is described as an example of a substrate to be processed. However, the semiconductor wafer may be germanium or a compound semiconductor such as GaAs, SiC, or GaN, and is not limited to a semiconductor wafer, and is used in liquid crystal display. The present invention can also be used for a glass substrate of an FPD (flat panel display) such as a device, or a ceramic substrate.
2‧‧‧處理容器 2‧‧‧Processing container
8‧‧‧載置台 8‧‧‧ mounting table
30‧‧‧加熱室 30‧‧‧heating room
32‧‧‧加熱燈 32‧‧‧heating lamp
50‧‧‧真空泵 50‧‧‧vacuum pump
52‧‧‧排氣管 52‧‧‧Exhaust pipe
60‧‧‧淋浴頭 60‧‧‧ shower head
70‧‧‧氣體供給部 70‧‧‧Gas Supply Department
90‧‧‧控制部 90‧‧‧Control Department
91‧‧‧控制器 91‧‧‧ Controller
92‧‧‧使用者介面 92‧‧‧User interface
93‧‧‧記憶部(記憶媒體) 93‧‧‧Memory Department (memory media)
100‧‧‧成膜裝置 100‧‧‧ film forming device
201‧‧‧底層 201‧‧‧ bottom layer
202‧‧‧層間絶緣膜 202‧‧‧Interlayer insulating film
203‧‧‧孔 203‧‧‧ hole
204‧‧‧埋入部 204‧‧‧Buried Department
205‧‧‧孔隙(接縫) 205‧‧ ‧ pores (seam)
206‧‧‧開口 206‧‧‧ openings
W‧‧‧半導體晶圓(被處理基板) W‧‧‧Semiconductor wafer (substrate to be processed)
圖1是表示用以實施本發明的鎢膜的成膜方法的成膜裝置之一例的剖面圖。 Fig. 1 is a cross-sectional view showing an example of a film forming apparatus for carrying out a film forming method of a tungsten film of the present invention.
圖2是本發明之一實施形態的成膜方法的流程圖。 Fig. 2 is a flow chart showing a film formation method according to an embodiment of the present invention.
圖3是用以說明本發明之一實施形態的成膜方法的工程剖面圖。 Fig. 3 is a cross-sectional view showing the structure of a film forming method according to an embodiment of the present invention.
圖4是表示經由事前未被供給氣體的氣體管線來供給蝕刻氣體時，及事前在氣體管線封入蝕刻氣體之後經由氣體管線來供給蝕刻氣體時，氣體流量的歷時變化圖。 4 is a view showing temporal changes in gas flow rate when an etching gas is supplied through a gas line to which a gas is not supplied beforehand, and when an etching gas is supplied through a gas line after the gas line is sealed in the gas line.
圖5是表示經由事前未被供給蝕刻氣體的氣體管線來供給氣體時，及事前在氣體管線封入蝕刻氣體之後經由氣體管線來供給蝕刻氣體時，比較蝕刻狀態的透過型電子顯微鏡照片。 5 is a transmission electron micrograph showing a comparison of an etching state when a gas is supplied through a gas line to which an etching gas is not supplied beforehand, and when an etching gas is supplied through a gas line after the gas line is sealed in the gas line.
圖6是表示以往只藉由CVD來形成鎢膜時的埋入部的SEM照片。 FIG. 6 is a SEM photograph showing an embedded portion when a tungsten film is conventionally formed by CVD.
圖7是表示依據本發明的實驗例來進行鎢膜的成膜時的埋入部的SEM照片及TEM照片。 7 is a SEM photograph and a TEM photograph showing an embedded portion when a tungsten film is formed according to an experimental example of the present invention.
圖8是表示依據本發明的其他實驗例來進行鎢膜的成膜時的埋入部的SEM照片及TEM照片。 8 is a SEM photograph and a TEM photograph showing an embedded portion when a tungsten film is formed according to another experimental example of the present invention.
圖9是表示只進行鎢膜的成膜時，及在鎢膜成膜後進行ClF3的蝕刻時之膜厚與表面粗度(Rms)的關係圖。 Fig. 9 is a graph showing the relationship between the film thickness and the surface roughness (Rms) when the film formation of the tungsten film is performed only, and when the etching of the CrF 3 is performed after the formation of the tungsten film.
圖10是表示只進行鎢膜的成膜時，及在鎢膜成膜後進行ClF3的蝕刻時之膜厚與反射率的關係圖。 Fig. 10 is a graph showing the relationship between the film thickness and the reflectance when the film formation of the tungsten film is performed only, and when the etching of the CrF 3 is performed after the formation of the tungsten film.
圖11是僅鎢膜的成膜時，及在鎢膜成膜後進行ClF3的蝕刻時之膜的掃描型顯微鏡(SEM)照片。 Fig. 11 is a scanning electron microscope (SEM) photograph of a film when a tungsten film is formed only, and when a film of a tungsten film is formed and then ClF 3 is etched.
圖12是僅鎢膜的成膜時，及在鎢膜成膜後進行ClF3的蝕刻時之膜的原子間力顯微鏡(AFM)照片。 Fig. 12 is an atomic force microscope (AFM) photograph of a film when a tungsten film is formed only and when ClF 3 is etched after a tungsten film is formed.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011149900 | 2011-07-06 | ||
| JP2012009452A JP5829926B2 (en) | 2011-07-06 | 2012-01-19 | Method for forming tungsten film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201308516A TW201308516A (en) | 2013-02-16 |
| TWI545692B true TWI545692B (en) | 2016-08-11 |
Family
ID=47788659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101124039A TWI545692B (en) | 2011-07-06 | 2012-07-04 | Tungsten film forming method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5829926B2 (en) |
| KR (1) | KR101366947B1 (en) |
| TW (1) | TWI545692B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9082826B2 (en) * | 2013-05-24 | 2015-07-14 | Lam Research Corporation | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features |
| US9748105B2 (en) * | 2013-08-16 | 2017-08-29 | Applied Materials, Inc. | Tungsten deposition with tungsten hexafluoride (WF6) etchback |
| JP6297884B2 (en) | 2014-03-28 | 2018-03-20 | 東京エレクトロン株式会社 | Method for forming tungsten film |
| US10276393B2 (en) * | 2015-01-26 | 2019-04-30 | Kokusai Electric Corporation | Method of manufacturing semiconductor device |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| KR102365114B1 (en) | 2015-08-28 | 2022-02-21 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| TWI720106B (en) | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd tungsten containing hardmask films and methods of making |
| JP6583081B2 (en) * | 2016-03-22 | 2019-10-02 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
| US10566211B2 (en) | 2016-08-30 | 2020-02-18 | Lam Research Corporation | Continuous and pulsed RF plasma for etching metals |
| WO2020054299A1 (en) * | 2018-09-14 | 2020-03-19 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing device, and recording medium |
| JP7149788B2 (en) * | 2018-09-21 | 2022-10-07 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4027960B2 (en) * | 1991-10-24 | 2007-12-26 | 東京エレクトロン株式会社 | Deposition system |
| JP3475666B2 (en) * | 1996-08-16 | 2003-12-08 | ソニー株式会社 | Dry etching method |
| US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
| JPH10321556A (en) * | 1997-05-17 | 1998-12-04 | Tokyo Electron Ltd | Deposition of film |
| KR100272523B1 (en) * | 1998-01-26 | 2000-12-01 | 김영환 | Method for forming metallization of semiconductor device |
| JP2000058643A (en) * | 1998-08-10 | 2000-02-25 | Sony Corp | Formation method for plug |
| JP2002009017A (en) * | 2000-06-22 | 2002-01-11 | Mitsubishi Electric Corp | Method of manufacturing semiconductor device |
| KR20090098073A (en) * | 2008-03-13 | 2009-09-17 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
| JP5550843B2 (en) * | 2009-03-19 | 2014-07-16 | ラピスセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
| US8119527B1 (en) * | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
-
2012
- 2012-01-19 JP JP2012009452A patent/JP5829926B2/en active Active
- 2012-06-29 KR KR1020120071114A patent/KR101366947B1/en active IP Right Grant
- 2012-07-04 TW TW101124039A patent/TWI545692B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5829926B2 (en) | 2015-12-09 |
| KR20130006314A (en) | 2013-01-16 |
| JP2013032575A (en) | 2013-02-14 |
| TW201308516A (en) | 2013-02-16 |
| KR101366947B1 (en) | 2014-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI545692B (en) | Tungsten film forming method | |
| TWI642140B (en) | Film formation method of tungsten film | |
| KR101850201B1 (en) | Method of forming tungsten film | |
| TWI713523B (en) | Metal film forming method | |
| JP5959991B2 (en) | Method for forming tungsten film | |
| KR101912995B1 (en) | Method of reducing stress in metal film and metal film forming method | |
| TWI683022B (en) | Film forming method, film forming method of tungsten film and memory medium | |
| TWI646582B (en) | Film forming method of tungsten film and method of manufacturing semiconductor device | |
| TWI663278B (en) | Method for depositing extremely low resistivity tungsten | |
| JP2014019912A (en) | Method of depositing tungsten film | |
| WO2015080058A1 (en) | Method for forming tungsten film | |
| JP6851173B2 (en) | Film formation equipment and film formation method | |
| JP2016098406A (en) | Film deposition method of molybdenum film | |
| JP6710089B2 (en) | Method for forming tungsten film | |
| JP6865602B2 (en) | Film formation method | |
| JP6391355B2 (en) | Method for forming tungsten film | |
| JP6608026B2 (en) | Method and apparatus for forming tungsten film |