TWI501335B - Polishing pad for eddy current end-point detection - Google Patents

Description

Polishing pad for eddy current endpoint detection

Embodiments of the invention relate to the field of chemical mechanical polishing (CMP) and in particular to polishing pads for eddy current endpoint detection.

Chemical mechanical planarization or chemical mechanical polishing (often abbreviated CMP) is a technique used in semiconductor fabrication to planarize semiconductor wafers or other substrates.

The process uses abrasives and corrosive chemical slurries (usually colloids) as well as polishing pads and retaining rings, which are typically larger than the wafer diameter. The polishing pad is pressed against the wafer by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head rotates during polishing. This method helps remove material and tends to flatten any irregular shape, making the wafer flat or planar. This may be necessary to mount a wafer for forming other circuit components. For example, this may be necessary to have the entire surface be within the field depth of the photolithography system or to selectively remove material based on the material location. The typical field depth requirement for the latest technology nodes below 50 nm is reduced to the ohm level.

The material removal process is not just a scratch (for example, using sandpaper on wood). The chemicals in the slurry also react with the material to be removed and/or weaken the material to be removed. The abrasive promotes this weakening process and the polishing pad helps to wipe the reactive material from the surface.

One of the problems in CMP is to determine if the polishing process is complete, such as whether the substrate layer has been flattened to the desired flatness or thickness, or when the desired amount of material has been removed. Conductive layer or film Excessive polishing increases the resistance of the circuit. On the other hand, insufficient polishing of the conductive layer can cause an electrical short. The initial thickness of the substrate layer, the slurry composition, the polishing pad conditions, the relative velocity between the polishing pad and the substrate, and the change in load on the substrate can cause changes in the rate of material removal. These changes result in a change in the time required to reach the polished end point. Therefore, it is generally not possible to determine the polishing endpoint based solely on the change in polishing time.

One method of determining the polishing endpoint is to monitor the polishing of the metal layer on the substrate in situ, for example using an optical or electrical sensor. One monitoring technique is to induce eddy currents in the metal layer with a magnetic field and to detect changes in magnetic flux as the metal layer is removed. The magnetic flux generated by the eddy current is opposite to the direction of the excitation flux line. This magnetic flux is proportional to the eddy current, the eddy current is proportional to the resistance of the metal layer, and the resistance of the metal layer is proportional to the thickness of the layer. Therefore, the change in the thickness of the metal layer causes a change in the magnetic flux generated by the eddy current. This change in magnetic flux induces a change in current in the primary coil that can be measured as a change in impedance. Therefore, the change in coil impedance reflects the change in the thickness of the metal layer. However, it may be necessary to modify the polishing pad to accommodate eddy current measurements during the instant polishing of the metal layer on the substrate.

Therefore, in addition to advances in slurry technology, polishing pads also play an important role in increasingly complex CMP operations. However, the development of CMP pad technology requires further improvement.

Embodiments of the invention include a polishing pad for eddy current endpoint detection.

In one embodiment, a polishing pad for polishing a semiconductor substrate includes a molded homogeneous polishing body. The molded homogeneous polishing body has a polished surface and a rear surface. The polishing pad also includes an endpoint detection region disposed in the molded homogeneous polishing body and covalently bonded thereto. The endpoint detection area is constructed of a different material than the molded homogeneous polishing body, at least a portion of the endpoint detection area being recessed relative to the surface after molding the homogeneous polishing body.

In another embodiment, a method of making a polishing pad for polishing a semiconductor substrate includes forming a molded homogeneous polishing body. The molded homogeneous polishing body has a polished surface and a rear surface. The method also includes forming an endpoint detection region disposed in the molded homogeneous polishing body and covalently bonded thereto area. The endpoint detection area is constructed of a different material than the molded homogeneous polishing body, at least a portion of the endpoint detection area being recessed relative to the surface after molding the homogeneous polishing body.

In one embodiment, a polishing pad for polishing a semiconductor substrate includes a molded homogeneous polishing body having a polished surface and a back surface. The groove pattern is disposed in the polishing surface, and the groove pattern has a bottom depth. The polishing pad also includes an end point detection area formed in the molded homogeneous polishing body. The endpoint detection region has a first surface oriented by the polishing surface and a second surface oriented by the rear surface. At least a portion of the first surface is coplanar with the bottom of the groove pattern and interrupts the groove pattern. The second surface is recessed into the molded homogeneous polishing body relative to the rear surface.

In another embodiment, a method of making a polishing pad includes forming a polishing pad precursor mixture in a forming mold. The cover of the forming mold is positioned in the polishing pad precursor mixture. A groove pattern is disposed on the cover, and the groove pattern has an interrupted area. The polishing pad precursor mixture is cured to provide a molded homogeneous polishing body having a polished surface and a back surface. A groove pattern from the cover is disposed in the polishing surface, the groove pattern having a bottom depth. An endpoint detection region is provided in the molded homogeneous polishing body, the endpoint detection region having a first surface oriented by the polishing surface and a second surface oriented by the rear surface. At least a portion of the first surface is coplanar with the bottom of the groove pattern and includes an interrupted region of the groove pattern. At the same time, the second surface is recessed into the molded homogeneous polishing body with respect to the rear surface.

In one embodiment, a method of making a polishing pad for polishing a semiconductor substrate includes forming a polishing pad comprising a molded homogeneous polishing body having a polishing surface and a back surface during molding. The groove pattern is disposed in the polishing surface, and the groove pattern has a bottom depth. The polishing pad also includes an end point detection area formed in the molded homogeneous polishing body. The endpoint detection region has a first surface oriented by the polishing surface and a second surface oriented by the rear surface. At least a portion of the first surface is coplanar with the bottom of the groove pattern and interrupts the groove pattern. The second surface is recessed into the molded homogeneous polishing body relative to the rear surface.

In one embodiment, a method of making a polishing pad includes forming a partially cured endpoint detection region precursor in a first forming mold. Partially cured endpoint detection area precursor system Located on the receiving area of the cover of the second forming mold. A polishing pad precursor mixture is provided in the second forming die. The partially cured endpoint detection region precursor is moved into the polishing pad precursor mixture by contacting the cover with the substrate of the second forming mold. The polishing pad precursor mixture and the partially cured endpoint detection region precursor are then heated to provide a molded homogeneous polishing body covalently bonded to the cured endpoint detection region precursor, the molded homogeneous polishing body having a polished surface and Rear surface. The cured endpoint detection region precursor is then recessed relative to the surface of the molded homogeneous polishing body to provide an endpoint detection region disposed in the molded homogeneous polishing body and covalently bonded thereto.

In another embodiment, a method of making a polishing pad includes positioning a support structure in a first forming die. A detection zone precursor mixture is provided over the support structure in the first forming die. The partially cured endpoint detection region precursor is formed by heating the detection region precursor mixture in the first molding die, and the partially cured endpoint detection region precursor is coupled to the support structure. The support structure and the partially cured end point detection region precursor are positioned on the recessed receiving area of the cover of the second forming mold by coupling the support structure to the recess receiving area of the cover. A polishing pad precursor mixture is provided in the second forming die. The partially cured endpoint detection region precursor is moved into the polishing pad precursor mixture by contacting the cover with the substrate of the second forming mold. Heating the polishing pad precursor mixture and the partially cured endpoint detection region precursor to provide a molded homogeneous polishing body covalently bonded to the cured endpoint detection region precursor, the molded homogeneous polishing body having a polished surface and thereafter The surface and the end point detection area are coupled to the support structure. The support structure is removed from the endpoint detection area.

100‧‧‧ polishing pad

102‧‧‧Molded homogeneous polished body

104‧‧‧ Polished surface

106‧‧‧Back surface

108‧‧‧Endpoint detection area

110‧‧‧Materials

112‧‧‧covalent bonding

114‧‧‧ first surface

116‧‧‧ second surface

118‧‧‧Concentric polygons

120‧‧‧radiation

150‧‧‧ Groove

200‧‧‧ polishing pad

202‧‧‧Molded homogeneous polished body

204‧‧‧ Polished surface

206‧‧‧Back surface

208‧‧‧Endpoint detection area

210‧‧‧Materials

214‧‧‧ first surface

216‧‧‧ second surface

218‧‧‧ third surface

220‧‧‧ sidewall of the endpoint detection area

222‧‧‧ interface

300‧‧‧ polishing pad

300'‧‧‧ polishing pad

302‧‧‧Molded homogeneous polished body

304‧‧‧ Polished surface

306‧‧‧Back surface

308‧‧‧Endpoint Detection Area

308'‧‧‧ Endpoint Detection Area

310‧‧‧Materials

312‧‧‧covalent bonding

320‧‧‧ side wall

400‧‧‧ polishing pad

402‧‧‧Molded homogeneous polished body

404‧‧‧ Polished surface

406‧‧‧Back surface

408‧‧‧ Groove pattern

410‧‧‧ bottom depth

412‧‧‧Endpoint Detection Area

414‧‧‧ first surface

416‧‧‧ second surface

418‧‧‧Concentric polygons

420‧‧‧radiation

500‧‧‧ polishing pad

502‧‧‧Molded homogeneous polished body

504‧‧‧ Polished surface

506‧‧‧Back surface

508‧‧‧ Groove pattern

510‧‧‧ bottom depth

512‧‧‧Endpoint Detection Area

514‧‧‧ first surface

516‧‧‧ second surface

518‧‧‧second groove pattern

520‧‧‧ interval

522‧‧‧Concentric polygon

524‧‧‧radiation

602‧‧‧First Forming Mold

604‧‧‧Precursor mixture

606‧‧‧ Cover

608‧‧‧ partially cured body

610‧‧‧Second forming mould

612‧‧‧ Cover

612'‧‧‧ Cover

614‧‧‧ Receiving area

614'‧‧‧ Receiving area

616‧‧‧ polishing pad precursor mixture

618‧‧‧ Groove pattern

620‧‧‧Molded homogeneous polished body

622‧‧‧Fixed endpoint detection area precursor

624‧‧‧Endpoint Detection Area

690‧‧‧ Opening/Export

699‧‧‧Support structure

708‧‧‧Endpoint Detection Area Precursor

709‧‧‧ sacrificial layer

722‧‧‧Endpoint Detection Area

822‧‧‧ Polished surface

824‧‧‧Back surface

826‧‧‧ bottom depth

830‧‧‧Endpoint Detection Area

832‧‧‧ first surface

834‧‧‧ second surface

850‧‧‧second groove pattern

924‧‧‧Endpoint Detection Area

950‧‧‧ top surface of the endpoint detection area

952‧‧‧ Groove

1000‧‧‧ polishing device

1002‧‧‧ top surface of the pressure plate

1004‧‧‧Plate

1006‧‧‧Axis rotation

1008‧‧‧Slider oscillation

1010‧‧‧ Sample Carrier/Carrier Head

1011‧‧‧Semiconductor wafer

1012‧‧‧suspension mechanism

1014‧‧‧Slurry feeder/slurry/flushing arm

1118‧‧‧ polishing pad

1124‧‧‧ Polished surface

1128‧‧‧ Groove

1130‧‧‧Chemical mechanical polishing slurry

1136‧‧‧ Carrier drive shaft

1138‧‧‧Axis

1140‧‧‧ recess

1142‧‧‧ on-site monitoring module

1144‧‧‧ core

1146‧‧‧Drive and sense coils

1148‧‧‧Oscillating magnetic field

1150‧‧‧ Controller

D‧‧‧ Depth of depression

D1‧‧ depth

D2‧‧‧degree/depression depth

T1‧‧·The thickness of the molded homogeneous body

Thickness of the part of the T2‧‧‧ molded homogeneous polished body except the groove of the polished surface

Thickness of material in the T3‧‧‧ endpoint detection area

W1‧‧‧Width

W2‧‧‧ distance

1A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

1B illustrates a top view of the polishing pad of FIG. 1A in accordance with an embodiment of the present invention.

2A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

2B illustrates a top view of the polishing pad of FIG. 2A in accordance with an embodiment of the present invention.

3A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

3B illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

4A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

4B illustrates a top view of the polishing pad of FIG. 4A in accordance with an embodiment of the present invention.

5A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

Figure 5B illustrates a top view of the polishing pad of Figure 5A, in accordance with an embodiment of the present invention.

6A-6T illustrate cross-sectional views of an operation for fabricating a polishing pad in accordance with an embodiment of the present invention.

7A-7D illustrate cross-sectional views of an operation for fabricating a polishing pad in accordance with an embodiment of the present invention.

8A-8F illustrate cross-sectional views of an operation for fabricating a polishing pad in accordance with an embodiment of the present invention.

9A-9F illustrate cross-sectional views of an operation for fabricating a polishing pad in accordance with an embodiment of the present invention.

Figure 10 illustrates an isometric side view of a polishing apparatus compatible with a polishing pad for eddy current endpoint detection in accordance with an embodiment of the present invention.

Figure 11 illustrates a cross-sectional view of a polishing apparatus having an eddy current endpoint detection system and a polishing pad compatible with the eddy current endpoint detection system, in accordance with an embodiment of the present invention.

Described herein is the use of eddy current endpoints to detect polishing pads for polishing semiconductor substrates. In the following Many specific details, such as specific polishing pad compositions and designs, are set forth in the description to provide a thorough understanding of the embodiments of the invention. It will be apparent to those skilled in the art that the embodiments of the invention may be practiced without the specific details. In other instances, well-known processing techniques, such as combinations of pastes and polishing pads for performing CMP of semiconductor substrates, have not been described in detail to avoid unnecessarily obscuring embodiments of the present invention. In addition, it should be understood that the various embodiments shown in the drawings

A polishing pad comprising a region designed to accommodate an eddy current detecting probe incorporated into a platen of the chemical mechanical polishing device can be formed. For example, in one embodiment of the invention, a region of distinct material is included in the polishing pad during molding of the polishing pad. The distinct material regions are shaped and sized to accommodate eddy current probes that protrude from the platen. In addition, the area can be made at least slightly transparent to aid in aligning the polishing pad on a platen including an eddy current probe. In another embodiment of the invention, the polishing pad is entirely a molded homogeneous polishing body having a recess formed in the back region of the polishing body. The recess can also be shaped and sized to receive an eddy current probe that protrudes from the platen. In one embodiment, the single recess is sized to accommodate all of the portion of the eddy current detector that protrudes from the platen. Further, in the case where the molded homogeneous polishing body is opaque, a pattern may be formed in the polishing surface of the polishing pad, wherein the pattern indicates the position of the recess on the back surface of the polishing pad or a key for the position of the recess. This key can be used to help align the polishing pad on a platen that includes an eddy current probe.

In accordance with an embodiment of the present invention, a polishing pad for polishing a semiconductor substrate is provided to allow a device such as a sensor to extend over a platen of a CMP tool. For example, in one embodiment, the polishing pad includes design features to facilitate its use in polishing tools equipped with eddy current endpoint detection systems and in CMP processes utilizing eddy current endpoint detection. The polishing pad design features generally allow the eddy current sensor of the CMP tool to rise above the plane of the CMP tool platen and extend into the back of the polishing pad during the polishing process. In an embodiment, the design features allow for this to occur without affecting the overall polishing performance of the polishing pad. Design features may also allow the polishing pad to be placed in the correct orientation on the platen, thereby making the vortex The flu detector can rise above the plane of the platen without interference.

In an embodiment, the design features include a recess in the back of the polishing pad that is appropriately sized, shaped, and positioned to align with the eddy current sensor. In one embodiment, another design feature includes a member that visually orients the polishing pad on the platen to align with the position of the sensor, such as an eddy current sensor. In an embodiment, the polishing pad has a transparent portion. In another embodiment, the polishing pad is completely opaque but includes a visible signal or key indicating the location of the corresponding back recess, such as an interrupt pattern on its polished surface.

In one aspect of the invention, a polishing pad for eddy current sensing includes an endpoint detection region that is constructed of a different material than the remainder of the polishing pad. For example, Figure 1A illustrates a cross-sectional view of a polishing pad suitable for eddy current endpoint detection in accordance with an embodiment of the present invention. 1B illustrates a top view of the polishing pad of FIG. 1A in accordance with an embodiment of the present invention.

Referring to Figures 1A and 1B, polishing pad 100 includes a molded homogeneous polishing body 102. The molded homogeneous polishing body 102 has a polishing surface 104 and a back surface 106 (note that only the back surface 106 is depicted in Figure 1A). Polished surface 104 can include a plurality of grooves 150, as depicted in FIG. The endpoint detection region 108 is disposed in the molded homogeneous polishing body 102. The endpoint detection region 108 is constructed of a different material 110 than the molded homogeneous polishing body 102. Material 110 is covalently bonded 112 to the material of molded homogeneous polishing body 102.

In one embodiment, the endpoint detection area 108 is thinner than most polishing pads, with or without grooves, as depicted in Figure 1A. For example, in one embodiment, the thickness (T3) of the material 110 of the endpoint detection region 108 is thinner than the thickness (T1) of the molded homogeneous polishing body 102. And in detail, T3 is thinner than the thickness (T2) of the portion of the molded homogeneous polishing body 102 other than the groove 150 of the polishing surface 104. In a particular embodiment, T1 is the thinnest portion of polishing pad 100.

Referring again to FIG. 1A, at least a portion of the material 110 of the endpoint detection region 108 is recessed relative to the back surface 106 of the molded homogeneous polishing body 102. For example, in one embodiment, the material 110 of the endpoint detection region 108 is generally recessed relative to the back surface 106 of the molded homogeneous polishing body 102. In detail, the material 110 of the endpoint detection area 108 has a first surface 114 and a second Surface 116. The second surface 116 is recessed to a degree D with respect to the rear surface 106. In one embodiment, the second surface 116 is recessed to a degree D sufficient to accommodate an eddy current probe that protrudes from the platen of the chemical mechanical polishing apparatus. In a particular embodiment, the depth D of the depression is about 70 mils (0.001 Å) below the surface 106.

Referring to FIG. 1B, in one embodiment, a groove pattern, that is, a pattern formed by the groove 150 shown in FIG. 1A, is disposed in the polishing surface 104 of the molded homogeneous polishing body 102. In an embodiment, the groove pattern includes a plurality of concentric polygons 118 and a plurality of radiation lines 120, as depicted in FIG. 1B.

In one embodiment, the term "covalent bonding" refers to a configuration in which atoms from material 110 of endpoint detection region 108 crosslink or share electrons from atoms of molded homogeneous polishing body 102 to effect an actual chemical bond. The covalent bond is different from the electrostatic interaction that can result from cutting off a portion of the polishing pad and replacing it with an insertion region, such as a window insert. Covalent bonding is also different from mechanical bonding (such as via a combination of screws, nails, glue or other adhesives). As described in detail below, in contrast to the separate separation of the polishing body and the later inserted insert, covalent bonding can be achieved by curing the polishing body precursor in which the endpoint detection region precursor has been disposed.

In another embodiment, the material of the endpoint detection region is not completely recessed relative to the surface after molding the homogeneous polishing body. For example, Figure 2A illustrates a cross-sectional view of another polishing pad in accordance with another embodiment of the present invention. 2B illustrates a top view of the polishing pad of FIG. 2A in accordance with an embodiment of the present invention.

Referring to Figures 2A and 2B, polishing pad 200 includes a molded homogeneous polishing body 202. The molded homogeneous polishing body 202 has a polished surface 204 and a back surface 206 (note that only the back surface 206 is depicted in Figure 2A). The endpoint detection region 208 is disposed in the molded homogeneous polishing body 202. The endpoint detection region 208 is comprised of a different material 210 than the molded homogeneous polishing body 202. Material 210 is covalently bonded 212 to the material of molded homogeneous polishing body 202.

In one embodiment, only a portion of the material 210 of the endpoint detection region 208 is molded relative to The surface 206 is recessed after the homogeneous polishing body 202. For example, the material 210 of the endpoint detection region 208 has a first surface 214, a second surface 216, and a third surface 218. The second surface includes only the inner portion of the end point detection region 208 and is recessed to a degree D with respect to the third surface 218 of the rear surface 206 and the end point detection region 208 of the molded homogeneous polishing body 202. Thus, the sidewall 220 of the endpoint detection region 208 extends along the interface 222, wherein the endpoint detection region 208 intersects the molded homogeneous polishing body 202 at the interface 222.

In one embodiment, by maintaining the sidewalls 220, a greater degree of covalent bonding between the endpoint detection regions 208 and the molded homogeneous polishing body 202 can be achieved, thereby improving the integrity of the polishing pad 200. In one embodiment, the second surface 216 is recessed to a degree D sufficient to accommodate an eddy current probe that protrudes from the platen of the chemical mechanical polishing apparatus. In a particular embodiment, the depth D of the depression is about 70 mils (0.001 Å) below the surface 206.

Referring to Figures 1A, 1B, 2A and 2B, an endpoint detection region (e.g., region 108 or 208) is a local area transparency (LAT) region, in accordance with an embodiment of the present invention. In one embodiment, the molded homogeneous polishing body is opaque, but the LAT region is transparent. As described below, in one embodiment, the molded homogeneous polishing body is opaque due at least in part to the inclusion of inorganic materials in the material for its manufacture. In this embodiment, an inorganic-free LAT region is produced and is substantially (if not completely) transparent to, for example, visible light, ultraviolet light, infrared light, or a combination thereof. In a particular embodiment, the inorganic material included in the molded homogeneous polishing body is an opacifying lubricant, while the LAT region is free of any inorganic material and is substantially free of an opacifying lubricant.

In an embodiment, the LAT region is effectively transparent (ideally fully transparent) to enable light to be transmitted through the polishing pad for placement of a polishing pad, for example, on a platen or for endpoint detection. However, it may be that the LAT region may or may not be made completely transparent, but may still be effective for light transmission for placement of the polishing pad on the platen or for endpoint detection. For example, in one embodiment, the LAT region can transmit less than 80% of incident light in the 700-710 nm range, but is still suitable for use as a window within the polishing pad. In one embodiment, the LAT region described above is impermeable to the slurry used in the chemical mechanical polishing operation.

In one embodiment, referring again to FIGS. 1B and 2B, endpoint detection regions 108 and 208 are respectively LAT regions and are transparent in a top view. In one embodiment, this visible transparency facilitates the mounting of a polishing pad on a platen equipped with an eddy current sensing probe. In Figure 2B, the sidewalls 220 can be seen from this transparent region, as depicted by the dashed rectangle.

However, in another embodiment, the material of the endpoint detection area is opaque and therefore does not provide a partial area transparent area. For example, Figures 3A and 3B illustrate cross-sectional views of other polishing pads in accordance with another embodiment of the present invention.

Referring to Figures 3A and 3B, polishing pad 300 (or 300') includes a molded homogeneous polishing body 302. The molded homogeneous polishing body 302 has a polishing surface 304 and a rear surface 306. Endpoint detection region 308 (or 308') is disposed in molded homogeneous polishing body 302. The endpoint detection region 308 (or 308') is comprised of an opaque material 310 that is different from the molded homogeneous polishing body 302. Material 310 is covalently bonded 312 to the material of molded homogeneous polishing body 302.

In one embodiment, referring to FIG. 3A, the material 310 of the endpoint detection region 308 is completely recessed relative to the surface 306 of the molded homogeneous polishing body 302. In another embodiment, referring to FIG. 3B, only a portion of the material 310 of the end point detection region 308' is recessed relative to the surface 306 of the molded homogeneous polishing body 302 (except for the sidewalls 320). In one embodiment, the endpoint detection region 308 (or 308') is an opaque region having a hardness that is different from the hardness of the molded homogeneous polishing body 302. In a particular embodiment, the hardness of the endpoint detection region 308 (or 308') is greater than the hardness of the molded homogeneous polishing body 302. However, in an alternative embodiment, the endpoint detection region 308 (or 308') has a hardness that is less than the hardness of the molded homogeneous polishing body 302. In an embodiment, the endpoint detection region 308 (or 308') is impermeable to the slurry used in the chemical mechanical polishing operation.

Although the endpoint detection region 308 (or 308') is comprised of an opaque material 310, the region can still be used to visually mount the polishing pad 300 or 300' on a platen equipped with an eddy current probe, respectively. For example, in an embodiment, the lack of a groove pattern on the first surface 304 of the endpoint detection region 308 (or 308') may provide a visible signal at the location of the endpoint detection region 308 (or 308') or The key for this location.

In another aspect of the invention, a polishing pad for eddy current detection includes an endpoint detection region that is constructed of the same material as the remainder of the polishing pad and that is homogeneous. 4A illustrates a cross-sectional view of a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention. 4B illustrates a top view of the polishing pad of FIG. 4A in accordance with an embodiment of the present invention.

Referring to Figures 4A and 4B, polishing pad 400 includes a molded homogeneous polishing body 402. The molded homogeneous polishing body 402 has a polished surface 404 and a rear surface 406. The groove pattern 408 is disposed in the polishing surface 404. Each groove of the groove pattern has a bottom depth 410. The polishing pad 400 also includes an end point detection region 412 formed in the molded homogeneous polishing body 402. The endpoint detection region has a first surface 414 that is oriented by the polishing surface 404 and a second surface 416 that is oriented by the rear surface 406. At least a portion of the first surface 414 is coplanar with a bottom depth 410 (eg, depth D1) of the groove pattern. The second surface 416 is recessed into the molded homogeneous polishing body 402 at a degree D2 relative to the back surface 406. In one embodiment, the second surface 416 is recessed to a degree D2 sufficient to accommodate an eddy current probe protruding from the platen of the chemical mechanical polishing apparatus. In a particular embodiment, the recess depth D2 is about 70 mils (0.001 Å) below the surface 406. In an embodiment, because at least a portion of the first surface 414 is coplanar with the bottom depth 410 of the groove pattern, the first surface 414 does not interfere with slurry movement during wafer polishing.

In an embodiment, at least a portion of the first surface 414 interrupts the groove pattern 408 of the polishing surface 404. For example, in one embodiment, referring to FIG. 4A, the entire first surface 414 of the endpoint detection region 412 is substantially coplanar with the bottom depth 410 of the groove pattern 408. Thus, the groove pattern 408 is interrupted at the endpoint detection region 412 because a single large groove is formed on the first surface 414 of the endpoint detection region 412. Referring again to FIG. 4B, a groove pattern is disposed in the polishing surface 404 of the molded homogeneous polishing body 402. In an embodiment, the groove pattern includes a plurality of concentric polygons 418 and a plurality of radiation lines 420. However, the pattern is interrupted at the endpoint detection area 412 due to the lack of a groove.

Thus, although the endpoint detection region 412 is made of the same material as the molded homogeneous polishing body 402 A visual indicator is constructed that still provides the location of the endpoint detection area 412. In a particular embodiment, the molded homogeneous polishing body 402 (including the endpoint detection region 408) is opaque, but is visually determined for mounting to a pressure plate equipped with an eddy current sensing system using interruptions in the groove pattern. The location of the endpoint detection area 408 on it.

In another embodiment, the endpoint detection region has a second groove pattern having a depth that is substantially coplanar with the bottom depth of the groove pattern disposed in the polishing surface of the polishing pad. For example, Figure 5A illustrates a cross-sectional view of another polishing pad in accordance with another embodiment of the present invention. Figure 5B illustrates a top view of the polishing pad of Figure 5A, in accordance with an embodiment of the present invention.

Referring to Figures 5A and 5B, polishing pad 500 includes a molded homogeneous polishing body 502. The molded homogeneous polishing body 502 has a polishing surface 504 and a rear surface 506. The groove pattern 508 is disposed in the polishing surface 504. Each groove of the groove pattern has a bottom depth 510. The polishing pad 500 also includes an end point detection region 512 formed in the molded homogeneous polishing body 502. The endpoint detection region has a first surface 514 that is oriented by the polishing surface 504 and a second surface 516 that is oriented by the rear surface 506. At least a portion of the first surface 514 is coplanar with a bottom depth 510 (eg, depth D1) of the groove pattern. The second surface 516 is recessed into the molded homogeneous polishing body 502 at a degree D2 relative to the back surface 506. In one embodiment, the second surface 516 is recessed to a degree D2 sufficient to accommodate an eddy current probe protruding from the platen of the chemical mechanical polishing apparatus. In a particular embodiment, the recess depth D2 is about 70 mils (0.001 Å) below the surface 506.

In an embodiment, at least a portion of the first surface 514 interrupts the groove pattern 508 of the polishing surface 504. For example, in one embodiment, referring to FIG. 5A, the first surface 514 of the endpoint detection region 512 has a second groove pattern 518 having a bottom depth with the groove pattern 508 disposed in the polishing surface 504. (eg depth D1) is substantially coplanar depth. However, the groove pattern 508 of the polishing surface 504 and the second groove pattern 518 of the endpoint detection region 512 are interrupted by variations in the spacing 520. For example, the individual groove spacing width W1 of the groove pattern 508 and the second groove pattern 518, and the second groove pattern 518 and the first groove pattern 508 deviates from the distance W2 that is greater than the width W1.

Referring again to FIG. 5B, a groove pattern is disposed in the polishing surface 504 of the molded homogeneous polishing body 502. In an embodiment, the groove pattern includes a plurality of concentric polygons 522 and a plurality of radiation lines 524. However, at the endpoint detection area 512, the pattern is interrupted around the second groove pattern 518. Thus, although the endpoint detection region 512 is constructed of the same material as the molded homogeneous polishing body 502, a visual indicator of the location of the endpoint detection region 512 is provided. In a particular embodiment, the molded homogeneous polishing body 502 (including the endpoint detection region 508) is opaque, but is determined for use in mounting on a pressure plate equipped with an eddy current sensing system using interrupted visual inspection in the groove pattern. The location of the endpoint detection area 508.

As described above, determining the position of the end point detecting area for mounting on the platen equipped with the eddy current detecting system using the interruption visual in the groove pattern is not limited to the fact that the offset of the groove pattern indicates the back surface of the polishing pad An embodiment of the location of the endpoint detection area. In another embodiment, the polishing surface includes another groove to track the contour of the location of the detection area on the back side of the polishing pad. In another embodiment, a change in the width of the groove on the polishing surface is used to indicate the location of the detection area on the back side of the polishing pad. In another embodiment, a change in the pitch of the grooves on the polishing surface is used to indicate the location of the detection area on the back side of the polishing pad. In another embodiment, the polishing surface includes two or more of the above features to indicate the location of the detection area on the back side of the polishing pad.

According to an embodiment of the invention, the molded homogeneous polishing body is composed of a thermosetting closed cell polyurethane material. In one embodiment, the term "homogeneous" is used to indicate that the composition of the thermoset closed cell polyurethane material is consistent throughout the composition of the polishing body. For example, in one embodiment, the term "homogeneous" excludes a polishing pad comprised of a composition (composite) of, for example, impregnated felt or multiple layers of different materials. In one embodiment, the term "thermosetting" is used to indicate an irreversibly cured polymeric material, for example, the material precursor is irreversibly changed to an infusible insoluble polymer network by curing. For example, in one embodiment, the term "thermosetting" excludes materials such as "hot plastic" or "thermoplastic" materials. A polishing pad composed of (a material composed of a polymer which becomes a liquid upon heating and which freezes to a completely glassy state upon sufficient cooling). It should be noted that polishing pads made of thermoset materials are typically made from lower molecular weight precursors which react in a chemical reaction to form a polymer, while polishing pads made of thermoplastic materials are typically heated by previously existing polymerizations. The object is manufactured by causing a phase change to form a polishing pad in a physical process. In one embodiment, the term "molding" is used to indicate the formation of a molded homogeneous polishing body in a forming mold, as described in more detail below.

In an embodiment, the polishing body is opaque. In one embodiment, the term "opaque" is used to indicate a material that allows about 10% or less of visible light to pass through. In one embodiment, the molded homogeneous polishing body is opaque mostly or entirely because of the opacifying lubricant (eg, as an additional component) throughout the homogeneous thermoset closed cell polyurethane material of the molded homogeneous polishing body. . In a particular embodiment, the opacifying lubricant is such as, but not limited to, the following materials: boron nitride, barium fluoride, graphite, graphite fluoride, molybdenum sulfide, barium sulfide, talc, barium trisulfide, disulfide Tungsten or Teflon.

In an embodiment, the molded homogeneous polishing body comprises a porogen. In one embodiment, the term "porogen" is used to indicate micron- or nano-sized spherical particles having a "hollow" center. The hollow center is not filled with solid material, but may include a gaseous or liquid core. In one embodiment, the molded homogeneous polishing body comprises a pre-expanded and gas-filled EXPANCEL as a porogen throughout the homogeneous thermoset closed-cell polyurethane material of the molded homogeneous polishing body (eg, as an additional component) ). In a particular embodiment, the EXPANCEL is filled with pentane.

The size of the molded homogeneous polishing body can vary depending on the application. However, certain parameters can be used to make the polishing pad comprising the molded homogeneous polishing body compatible with conventional processing equipment or even with conventional chemical machining operations. For example, in accordance with an embodiment of the present invention, the molded homogeneous polishing body has a thickness in the range of from about 0.075 Å to about 0.130 Å, such as in the range of from about 1.9 to about 3.3 mm. In one embodiment, the molded homogeneous polishing body 202 has a diameter of approximately 20 吋 to Within the range of 30.3 Å, for example, in the range of about 50-77 cm, and may be in the range of about 10 吋 to 42 ,, such as in the range of about 25-107 cm. In one embodiment, the molded homogeneous polishing body has a pore density in the range of from about 18% to about 30% of the total void volume, and may be in the range of from about 15% to about 35% of the total void volume. In one embodiment, the molded homogeneous polishing body has a closed cell type porosity. In one embodiment, the molded homogeneous polishing body has a pore size of about 40 microns in diameter, but can be smaller, such as about 20 microns in diameter. In one embodiment, the moldable homogeneous polishing body has a compressibility of about 2.5%. In one embodiment, the molded homogeneous polishing body has a density in the range of from about 0.70 to about 0.90 grams per cubic centimeter, or from about 0.95 to about 1.05 grams per cubic centimeter.

The rate of removal of various films when using polishing pads for eddy current sensing, including molding homogeneous polishing bodies, can vary depending on the polishing tool, slurry, conditioning or polishing agent formulation used. However, in one embodiment, the copper removal rate of the molded homogeneous polishing body is in the range of about 30-900 nm/min. In one embodiment, the molded homogeneous polishing body described herein has an oxide removal rate in the range of about 30-900 nm/min.

As described above, a polishing pad suitable for eddy current detection can be manufactured by a molding process. In one embodiment, the molding process can be used to fabricate a polishing pad having an endpoint detection region comprised of a different material than the remainder of the polishing pad. For example, Figures 6A-6J illustrate cross-sectional views of various processing operations in fabricating a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

Referring to Figures 6A-6D, a method of making a polishing pad includes first forming a partially cured endpoint detection region precursor. For example, referring to Figures 6A and 6B, the first forming die 602 is filled with the precursor mixture 604 and the cap 606 of the first forming die 602 is placed on top of the mixture 604. In one embodiment, the mixture 604 is heated under pressure to provide a partially cured body 608 (eg, extending and/or cross-linking at least to some extent in the mixture 604) while the cover 606 remains in place. , as depicted in Figure 6C). Providing a partially cured endpoint detection region precursor after removing a portion of the cured body 608 from the first forming mold 602 608, as depicted in Figure 6D.

In one embodiment, the partially cured endpoint detection region precursor 608 is formed by mixing a urethane prepolymer with a curing agent. In one embodiment, the partially cured endpoint detection region precursor 608 ultimately provides a local area transparency (LAT) region in the polishing pad. The LAT region can be constructed of materials that are compatible with various endpoint detection techniques and that are suitable for inclusion in a polishing pad fabricated by a molding process. For example, the partially cured endpoint detection region precursor 608 is formed by first mixing an aromatic urethane prepolymer with a curing agent. In another embodiment, the opaque regions are formed by including an opacifying agent in the mixture. In either case, the resulting mixture is then partially cured in a first forming die to provide a molded colloid.

Referring to FIG. 6E, the partially cured endpoint detection region precursor 608 is positioned on the receiving region 614 of the cover 612 of the second forming die 610. A polishing pad precursor mixture 616 is formed in the second forming die 610. In accordance with an embodiment of the present invention, polishing pad precursor mixture 616 includes a polyurethane prepolymer and a curing agent.

In one embodiment, the polishing pad precursor mixture 616 is used to ultimately form a molded homogeneous polishing body comprised of a thermoset closed cell polyurethane material. In one embodiment, the polishing pad precursor mixture 616 is used to ultimately form a hard mat and only a single type of curing agent is used. In another embodiment, the polishing pad precursor mixture 616 is used to ultimately form a cushion and use a combination of a first curing agent and a second curing agent. For example, in a particular embodiment, the prepolymer comprises a polyurethane precursor, the first curing agent comprises an aromatic diamine compound and the second curing agent comprises an ether linkage. In a particular embodiment, the polyurethane precursor is an isocyanate, the first curing agent is an aromatic diamine and the second curing agent is such as, but not limited to, polybutylene glycol, an amine functional diol Or an amine functionalized polyoxypropylene. In one embodiment, the prepolymer, the first curing agent, and the second curing agent have an approximate molar ratio of 100 parts prepolymer, 85 parts first curing agent, and 15 parts second curing agent. It will be appreciated that polishing pads having different hardness values can be provided using different ratios or based on the specific properties of the prepolymer and the first curing agent and the second curing agent. In one embodiment, the mixing further comprises mixing the opacifying lubricant with the prepolymer, a first curing agent and a second curing agent. In one embodiment, the opacifier is a material such as, but not limited to, boron nitride, barium fluoride, graphite, graphite fluoride, molybdenum sulfide, barium sulfide, talc, barium trisulfide, tungsten disulfide or Teflon.

In a particular embodiment, a molded homogeneous polishing body is produced by reacting the following materials to form an almost opaque, pale yellow thermosetting polyurethane having a substantially uniform microcellular closed cell structure: (a) aromatic A urethane prepolymer such as AIRTHANE 60D: polytetramethylene glycol-toluene diisocyanate, (b) a porogen such as EXPANCEL DE40: an acrylonitrile/acrylate copolymer having an isobutylene or pentane filler, ( c) lubricants and whitener fillers, (d) polyols such as Terathane 2000: polyoxybutylene glycol, and (e) catalysts such as DABCO 1027, and (f) curing agents such as CURENE 107: thioethers An aromatic diamine, (g) a heat stabilizer such as Irgastab PUR68, and (g) a UV absorber such as Tinuvin 213. In one embodiment, the EXPANCEL is filled with a gas and the average pore size of each EXPANCEL unit is in the range of about 20 to 40 microns.

Referring to FIG. 6F, the partially cured endpoint detection region precursor 608 is moved into the polishing pad precursor mixture 616 by lowering the cover 612 of the second forming die 610. In one embodiment, the partially cured endpoint detection region precursor 608 is moved to the bottommost surface of the second forming die 610. In one embodiment, a plurality of grooves are formed in the cover 612 of the forming mold 612. A plurality of grooves are used to stamp the groove pattern into the polishing surface of the polishing pad formed in the forming mold 610. It will be appreciated that the embodiments described herein for moving a partially cured endpoint detection region precursor into a polishing pad precursor mixture by lowering the cover of the forming mold need only achieve contact with the substrate of the forming mold. together. That is, in some embodiments, the base of the forming mold is raised toward the cover of the forming mold, while in other embodiments, the cover of the forming mold is lowered toward the base of the forming mold while the base is raised toward the cover.

Referring to Figure 6G, the polishing pad precursor mixture 616 and the partially cured endpoint detection region precursor 608 are heated under pressure (e.g., with the cover 612 held in place) to provide and cure the endpoint detection region. The precursor 622 is covalently bonded to the molded homogeneous polishing body 620. Reference Referring to Figure 6H, the polishing pad is removed from the mold 610 (or the polishing pad precursor if further cured) to provide a molded homogeneous polishing body 620 in which the cured endpoint detection region precursor 622 is disposed. It should be noted that heating may be required for further curing and may be carried out by placing the polishing pad in an oven and heating. In summary, a polishing pad is ultimately provided, wherein the molded homogeneous polishing body 620 of the polishing pad has a polished surface (top, groove surface of Figure 6H) and a back surface (bottom, flat surface of Figure 6H). In one embodiment, the heating in the forming die 610 includes a temperature of about 200-260 degrees Fahrenheit and about 2 in the cover 612 (the mixture 616 in the seal forming die 610). At least partially cured at a pressure in the range of 12 psi.

Finally, referring to Figures 6I and 6J, the cured endpoint detection region precursor 622 is recessed relative to the surface of the molded homogeneous polishing body 620. The recess provides a polishing pad disposed in the endpoint detection region 624 that is molded into the homogeneous polishing body 620 and covalently bonded thereto. For example, polishing pads obtainable in the manner described above can include, but are not limited to, polishing pads described in connection with Figures 1A and 1B, 2A and 2B, 3A and 3B.

In accordance with an embodiment of the present invention, the cured endpoint detection region precursor 622 is recessed by scooping a portion of the cured endpoint detection region precursor 622. In one embodiment, the entire endpoint detection region 624 is recessed relative to the surface of the molded homogeneous polishing body 620, as depicted in FIG. 6I and described in conjunction with FIGS. 1A, 1B, and 3A. However, in another embodiment, only the inner portion of the endpoint detection region 624 is recessed relative to the rear surface of the molded homogeneous polishing body, as depicted in Figure 6J and described in connection with Figures 2A, 2B, and 3B.

In another aspect, a polishing process can be used to fabricate a polishing pad having an endpoint detection region comprised of a different material than the remainder of the polishing pad. However, the material for the endpoint detection area can be introduced into the molding process on a separate support structure that needs to be accommodated in the molding process. For example, Figures 6K-6T illustrate cross-sectional views of various processing operations in fabricating a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

Referring to Figures 6K-6O, a method of making a polishing pad includes first forming a partially cured endpoint detection region precursor on a support structure. For example, referring to Figures 6K and 6L, the support structure 699 is placed inside the first forming die 602. In accordance with an embodiment of the present invention, the support structure 699 is sized to conform to the bottom of the first forming die 602. In an embodiment, the support structure 699 is constructed of a non-flexible material, such as a brittle material, such as a rigid epoxy sheet. In an embodiment, the support structure 699 is constructed of a material suitable for withstanding temperatures of about 300 degrees Fahrenheit. In one embodiment, the support structure 699 is constructed of a material suitable for withstanding high thermal budgets because in a particular embodiment, the support structure 699 is recycled to repeat in the molding process depicted in Figures 6K-6T. use. In an embodiment, the support structure 699 is constructed of a thermally insulating material to avoid transferring any heat through the support structure 699 during the molding process. In one embodiment, the support structure 699 is constructed of a chemically inert material and is not covalently bonded to the polyurethane material during the curing process. In one embodiment, the support structure 699 is constructed of a material that has negligible outgassing upon heating.

Referring to Figures 6M-6O, a first forming die 602 is filled with a precursor mixture 604 over the support structure 699 and a cover 606 of the first forming die 602 is placed on top of the mixture 604. In one embodiment, the mixture 604 is heated under pressure to maintain a portion of the cured body 608 disposed on the support structure 699 (eg, formed at least to some extent throughout the mixture 604) while the cover 606 remains in place. Crosslinking and/or chain extension, as depicted in Figure 6N). Once the partially cured body 608 and the coupled support structure 699 are removed from the first forming die 602, a partially cured endpoint detection region precursor 608 coupled to the support structure 699 is provided, as depicted in FIG. In one embodiment, the polymer film is adhered to the top surface of the support structure 699 by a piece of double-sided tape prior to the addition of the mixture 604 to the first forming die 602. Thus, in one embodiment, the partially cured body 608 is coupled to the support structure 699 by a polymeric film and a piece of double sided tape.

Referring to Figures 6P and 6Q, the partially cured end detection region precursor 608 and the coupled support structure 699 are positioned in the receiving region 614' of the cover 612' of the second forming die 610. in In one embodiment, the polymeric film is disposed between the partially cured endpoint detection region precursor 608 and the support structure 699 (eg, by a first piece of double-sided tape), and the second sheet of double-sided tape is used to support the structure. 699 is coupled to the surface of receiving area 614' of cover 612'. A polishing pad precursor mixture 616 is formed in the second forming die 610. In accordance with an embodiment of the present invention, polishing pad precursor mixture 616 includes a polyurethane prepolymer and a curing agent.

Referring to FIG. 6R, the partially cured endpoint detection region precursor 608 (as supported by the support structure 699) is moved into the polishing pad precursor mixture 616 by lowering the cover 612' of the second forming die 610. In one embodiment, the partially cured endpoint detection region precursor 608 is moved into the true bottom surface of the second forming die 610. The polishing pad precursor mixture 616 and the partially cured endpoint detection region precursor 608 (and thus the heating support structure 699) are heated under pressure (eg, while the cover 612' remains in place) to provide an endpoint detection region. The precursor 622 is crosslinked and molded into a homogeneous polishing body 620.

Referring to Figure 6S, the polishing pad is removed from the mold 610 (or the polishing pad precursor if further cured) to provide a molded homogeneous polishing body 620 in which the cured endpoint detection region precursor 622 is disposed. However, in an embodiment, the support structure 699 remains coupled to the cured endpoint detection region precursor 622 after removal from the forming mold 610, as depicted in Figure 6S. It should be noted that heating may be required for further curing and may be carried out by placing the polishing pad in an oven and heating. In summary, a polishing pad is ultimately provided, wherein the molded homogeneous polishing body 620 of the polishing pad has a polishing surface (top, groove surface of Figure 6S) and a back surface (bottom, flat surface of Figure 6S) and support structure 699. Thus, in one embodiment, the support structure 699 needs to be removed to provide a polishing pad, such as by removing the support structure 699 from the self-curing endpoint detection area precursor 622 and abutting the double sided tape. In one embodiment, the support structure 699 is removed and then the cured endpoint detection region precursor 622 is recessed, as described above in connection with Figures 6I and 6J, to provide a polishing pad having a recessed endpoint detection region.

Referring to FIG. 6T, in another embodiment, once the polishing pad is removed from the mold 610, the support structure 699 remains coupled to the receiving area 614' of the cover 612'. That is, when the cover 612' is self- When the forming mold 610 is raised, the support structure 699 is peeled off from the end point detecting area precursor 620. In an embodiment, the support structure 699 is easily removed by pulling the support structure 699 from the receiving area 614'. However, in another embodiment, it has been found difficult to remove the support structure 699 from the cover 612'. Thus, in an embodiment, an opening or outlet 690 is provided in the cover 612'. Once the cover 612' is removed from the forming die 610, air or inert gas is forced through the opening 690 to eject the support structure 699 from the receiving region 614'. In a particular embodiment, the support structure 699 is then reused in a subsequent molding process.

In another aspect, the partially cured endpoint detection region precursor can include a sacrificial layer and the recess is formed by removing the sacrificial layer. For example, Figures 7A-7C illustrate cross-sectional views of various processing operations for fabricating a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

Referring to FIG. 7A, the partially cured endpoint detection region precursor 708 is inserted into the polishing pad precursor mixture 616 by lowering the cover 612 of the forming mold 610 having the partially cured endpoint detection region precursor 708 thereon. However, in one embodiment, unlike the partially cured endpoint detection region precursor 608, the partially cured endpoint detection region precursor 708 includes a sacrificial layer 709 disposed thereon. Thus, the partially cured endpoint detection region precursor 708 is not only inserted into the polishing pad precursor mixture 616, but is then moved toward the bottom surface of the forming mold 610. Rather, the sacrificial layer 709 is coupled to the partially cured endpoint detection region precursor 708 prior to placing the partially cured endpoint detection region precursor 708 on the cover 612 of the forming mold 610. Next, the partially cured endpoint detection region precursor 708 and sacrificial layer 709 collectively move toward the bottom surface of the forming mold 610, as depicted in Figure 7A. Thus, the sacrificial layer 709 is located between the bottom of the forming mold and the partially cured end detecting region precursor 708. In one embodiment, the sacrificial layer 709 is comprised of a composite comprising a layer of Mylar film as a component.

Referring to Figure 7B, the polishing pad precursor mixture 616 and the partially cured endpoint detection region precursor 708 are heated under pressure (e.g., with the cover 612 held in place) to provide The endpoint detection region 722 is a covalently bonded molded homogeneous polishing body 620. Referring to Figure 7C, the polishing pad is removed from the mold 610 to provide a molded homogeneous polishing body 620 in which an end point detection region 722 and a sacrificial layer 709 are disposed. In accordance with an embodiment of the present invention, the recess of the eddy current detecting region of the polishing pad is formed by removing the sacrificial layer 709, as depicted in Figure 7D. In one embodiment, the entire endpoint detection region 722 is thus recessed relative to the surface of the molded homogeneous polishing body 620, as also depicted in Figure 7D.

In accordance with an embodiment of the present invention, the endpoint detection region (e.g., 624 of FIG. 6I or 722 of FIG. 7D) is constructed of a different material than the molded homogeneous polishing body, as described above and in conjunction with FIGS. 1A and 1B, 2A and 2B, 3A and 3B are described. For example, in one embodiment, the endpoint detection region 624 or 722 is a local area transparent (LAT) region, as described in connection with Figures 1A, 1B and 2A, 2B. In one embodiment, the endpoint detection region 624 or 722 is an opaque region having a hardness that is different from the hardness of the molded homogeneous polishing body 620, as described in connection with Figures 3A and 3B. In one embodiment, the molded homogeneous polishing body 620 is comprised of a thermoset closed cell polyurethane material. In one embodiment, the polishing surface of the molded homogeneous polishing body 620 includes a groove pattern disposed therein and formed by a cover of the second forming mold 610.

As briefly described above, in one embodiment, the endpoint detection region 624 (or 722) and the molded homogeneous polishing body 620 can have different stiffnesses. For example, in one embodiment, the hardness of the molded homogeneous polishing body 620 is less than the hardness of the endpoint detection region 624. In a particular embodiment, the molded homogeneous polishing body 620 has a hardness in the range of Shore D 20-45, and the endpoint detection region 624 has a hardness of about Shore D 60. Although the hardness may vary, the covalent bonding and/or crosslinking between the endpoint detection region 624 and the molded homogeneous polishing body 620 may still be extensive. For example, according to an embodiment of the present invention, the hardness difference between the molded homogeneous polishing body 620 and the end point detecting area 624 is Shore D 10 or Shore D 10 or more, and the molded homogeneous polishing body 620 and the end point detection are performed. The degree of covalent bonding and/or crosslinking between regions 624 is abundant.

The size of the polishing pad and the end detection area disposed therein may be as desired with. For example, in one embodiment, a polishing pad containing an eddy current probe is fabricated, and the molded homogeneous polishing body 620 is circular in the range of approximately 75-78 cm in diameter, and the endpoint detection region 624 is along the die. The radial axis of the homogenized polishing body 620 has a length in the range of about 4-6 cm, a width in the range of about 1-2 cm, and is positioned within about 16-20 cm from the center of the molded homogeneous polishing body 620. position.

With respect to vertical positioning, the position of the endpoint detection area in the polishing body can be selected for a particular application and can also be the result of the forming process. For example, by including the endpoint detection region in the polishing body via a molding process, the positioning and achievable accuracy is compared to, for example, the process of cutting the polishing pad after forming and adding a window insert after forming the polishing pad. Can be significantly more appropriate. In one embodiment, the endpoint detection region 624 is included in the molded homogeneous polishing body 620 to form a groove with the groove surface of the molded homogeneous polishing body 620 by using a molding process as described above. The bottom is on the same plane. In a particular embodiment, the endpoint detection region 624 is in the molded homogeneous polishing body 620 and the endpoint detection region by including an endpoint detection region 624 that is flush with the groove bottom of the groove surface of the polishing body. The polishing pad manufactured by 624 does not interfere with the CMP processing operation throughout its useful life.

As described above, a polishing pad suitable for eddy current detection can be fabricated by a molding process. However, the polishing pad need not include LAT or other separate and distinct material areas. 8A-8F illustrate cross-sectional views of various processing operations for fabricating a polishing pad for polishing a semiconductor substrate and suitable for eddy current endpoint detection, in accordance with an embodiment of the present invention.

Referring to FIG. 8A, a method of making a polishing pad includes forming a polishing pad precursor mixture 616 in a forming mold 610. Referring to Figures 8A and 8B, a cover 612 of the forming die 610 is positioned in the polishing pad precursor mixture 616. Cover 612 includes a groove pattern 618 disposed thereon. The groove pattern 618 has an interrupted region 614 where the pattern is different or slightly isolated from most of the groove pattern 618, as described in more detail below.

Referring to Figure 8C, polishing pad precursor mixture 616 is heated to provide a molded homogeneous polishing body 620. Referring to Figure 8D, the molded homogeneous polishing body 620 is removed from the forming die 610 to provide polishing. Pad (or polishing pad precursor if further heating or curing is required after the molding process). The polishing pad composed of the molded homogeneous polishing body 620 includes a polishing surface 822 and a rear surface 824. In accordance with an embodiment of the present invention, a groove pattern 618 (including the interruption region 614) formed by the cover 612 of the forming mold 610 is disposed in the polishing surface 822, as depicted in Figure 8D. The groove pattern disposed in the polishing surface 822 has a bottom depth 826. In one embodiment, the molded homogeneous polishing body 620 is comprised of a thermoset closed cell polyurethane material.

Referring to Figures 8E and 8F, an endpoint detection region 830 is provided in the molded homogeneous polishing body 620. The endpoint detection region has a first surface 832 that is oriented by the polishing surface 822 and a second surface 834 that is oriented by the surface behind the molded homogeneous polishing body 620. At least a portion of the first surface 832 is coplanar with the bottom depth 826 of the groove pattern. For example, in one embodiment, the entire first surface 832 is coplanar with the bottom depth 826 of the groove pattern, as depicted in Figure 8E. Additionally, the second surface 834 is recessed into the molded homogeneous polishing body 620 relative to the back surface 824, as also depicted in Figure 8E. In one embodiment, the endpoint detection region 830 is provided by scooping a portion of the molded homogeneous polishing body 620. In one embodiment, the molded homogeneous polishing body 620 (including the endpoint detection region 830) is opaque.

In accordance with an embodiment of the present invention, as mentioned above, the polishing surface 822 includes an interrupted region of its groove pattern. The interruption zone corresponds to the interruption zone 614 in the cover 612 of the forming die 610. In one embodiment, as depicted in Figures 8A and 8E, the interruption region 614 is completely flat and coplanar with the bottom of the cover 612. Thus, the entire first surface 832 of the endpoint detection region 830 is substantially coplanar with the bottom depth 826 of the groove pattern in the polishing surface 822, as described in connection with the polishing pads of Figures 4A and 4B. However, in an alternative embodiment, the first surface of the endpoint detection region 830 includes a second groove pattern 850 having a bottom portion of the groove pattern disposed in the polishing surface 822 of the molded homogeneous polishing body 820. The depth is substantially coplanar depth. This alternative embodiment is depicted in Figure 8F. A polishing pad consistent with this embodiment is described above in connection with Figures 5A and 5B. In a particular embodiment, the groove pattern (the groove pattern of the polishing surface 822) and the second groove pattern (the groove pattern of the interruption region) are inter-grooves The width of the second groove pattern is offset from the first groove pattern by a distance greater than the width, as also described above in connection with Figures 5A and 5B.

In another aspect of the invention, the endpoint detection region in the molded homogeneous polishing body is formed by removing the sacrificial layer. For example, Figures 9A-9F illustrate cross-sectional views of various processing operations for fabricating a polishing pad that provides a termination in a polishing pad by removing a sacrificial layer embedded in the molded homogeneous polishing body, in accordance with an embodiment of the present invention. Point detection area.

Referring to FIG. 9A, a sacrificial layer 709 is disposed at the bottom of the forming mold 610. For example, in one embodiment, the sacrificial layer 709 is inserted into the forming mold prior to adding the polishing pad component to the mold. In a particular embodiment, the sacrificial layer 709 is comprised of a Mylar layer. Referring to FIG. 9B, the polishing pad precursor mixture is dispensed onto the sacrificial layer 709 in the forming mold 610. Referring to Figure 9C, polishing pad precursor mixture 616 is heated to provide molded homogeneous polishing body 620 in the forming mold 610 with cover 612 held in place, as described in connection with Figure 8C. However, the sacrificial layer 709 disposed at the bottom of the forming mold 610 remains during molding of 620.

Referring to Figure 9D, the molded homogeneous polishing body 620 is removed from the forming mold to provide a polishing pad in which the sacrificial layer 709 is disposed (or a polishing pad precursor if further heating or curing is required after the molding process). Referring to Figures 9E and 9F, once the sacrificial layer 709 is removed, the endpoint detection region 924 is provided in the molded homogeneous polishing body 620. Thus, in accordance with an embodiment of the present invention, the recess of the eddy current detecting region of the polishing pad is formed by removing the sacrificial layer 709 that is coplanar with the surface behind the polishing pad. In one embodiment, the entire endpoint detection region 924 is recessed relative to the surface of the molded homogeneous polishing body 620, as depicted in Figures 9E and 9F. In one embodiment, the entire top surface 950 of the endpoint detection region 924 is recessed and flat, as depicted in Figure 9E. However, in another embodiment, a second set of grooves 952 (interrupted by the grooves of the polished surface of 620) are disposed on the top surface of the endpoint detection region 924, as depicted in Figure 9F.

In yet another embodiment, the recessed regions of the polishing pad can be fabricated by placing the elevated features on or in the bottom of the mold used to form the polishing pad. For example, referring again to Figures 9A-9C, the blackened region can be substituted for the sacrificial layer 709 as a permanent construction in the forming mold 610. Sexual or semi-permanent features. That is, as opposed to the sacrificial layer 709 that is transferred from the mold with the polishing pad being fabricated (e.g., as described in connection with Figure 9D), this feature does not transfer with the polishing pad being fabricated. In this case, in one embodiment, a polishing pad composed of a homogeneous polishing body 620 (such as that shown in Figures 9E and 9F) is directly formed in the forming mold without intermediate removal of the sacrificial layer (removal of the sacrificial layer is required) The situation is as described in connection with Figure 9D. In another embodiment, permanent or semi-permanent features constructed in a forming mold are used with dual material pad manufacturing, such as for making polishing pads, such as those described in connection with Figures 1A, 2A, 3A, and 3B.

The polishing pad described herein can be adapted for use with a chemical mechanical polishing device equipped with an eddy current endpoint detection system. For example, Figure 10 illustrates an isometric side view of a polishing apparatus compatible with a polishing pad suitable for eddy current endpoint detection in accordance with an embodiment of the present invention.

Referring to Figure 10, polishing apparatus 1000 includes a platen 1004. The top surface 1002 of the platen 1004 can be used to support a polishing pad for eddy current endpoint detection. Platen 1004 can be configured to provide shaft rotation 1006 and slider oscillation 1008. Sample carrier 1010 is used to hold, for example, semiconductor wafer 1011 in place during polishing of a semiconductor wafer having a polishing pad. The sample carrier 1010 is further supported by a suspension mechanism 1012. A slurry feeder 1014 is included to provide slurry to the polishing pad surface prior to and during polishing of the semiconductor wafer.

In one aspect of the invention, a polishing pad suitable for eddy current endpoint detection is provided for use with a polishing apparatus similar to polishing apparatus 1000. For example, Figure 11 illustrates a cross-sectional view of a polishing apparatus having an eddy current endpoint detection system and a polishing pad compatible with the eddy current endpoint detection system, in accordance with an embodiment of the present invention.

Referring to Figure 11, polishing station 1000 includes a rotatable platen 1004 having a polishing pad 1118 disposed thereon. Polishing pad 1118 provides a polished surface 1124. At least a portion of the polishing surface 1124 can have a groove 1128 for carrying slurry. Polishing station 1000 can also include a polishing pad conditioner device to maintain adjustment of the polishing pad to effectively polish the substrate. During the polishing operation, the chemical mechanical polishing slurry 1130 is supplied to the polishing by a slurry supply or a combined slurry/flushing arm 1014. The surface of the light pad 1118. The substrate 1011 is held by the carrier head 1010 relative to the polishing pad 1118. The carrier head 1010 is suspended by a support structure, such as a rotating rack, and coupled to the carrier head rotary motor by a carrier drive shaft 1136 such that the carrier head is rotatable about the shaft 1138.

A recess 1140 is formed in the platen 1004 and the field monitoring module 1142 is assembled into the recess 1140. The on-site monitoring module 1142 can include a field eddy current monitoring system having a core 1144 disposed in the recess 1140 for rotation with the platen 1004. Drive and sense coil 1146 is wound around core 1144 and is coupled to controller 1150. In operation, the oscillator provides energy to the drive coil to create an oscillating magnetic field 1148 that extends through the body of the core 1144. At least a portion of the magnetic field 1148 extends through the polishing pad 1118 toward the substrate 1011. If a metal layer is present on the substrate 1011, the oscillating magnetic field 1148 will generate an eddy current.

The eddy current produces a magnetic flux in a direction opposite to the field, and this magnetic flux induces a reverse current in the primary coil or the sense coil opposite to the direction of the drive current. The resulting current change can be measured as a change in the impedance of the coil. The metal layer resistance varies with the thickness of the metal layer. Therefore, the eddy current and the intensity of the magnetic flux induced by the eddy current also change, causing the impedance change of the primary coil. By monitoring such changes, such as by measuring the amplitude of the coil current or the phase of the coil current (relative to the phase of the drive coil current), the eddy current sensor monitor can detect changes in the thickness of the metal layer.

Referring again to Figure 11, in accordance with an embodiment of the present invention, when the polishing pad 1118 is secured to the platen 1004, the sheet is mounted on the recess 1140 in the platen and the core and/or the coil project beyond the plane of the top surface of the platen 1004. Partially. By positioning the core 1142 closer to the substrate 1112, less magnetic field propagation is achieved and spatial resolution can be improved. Assuming polishing pad 1011 is not used with an optical endpoint monitoring system, in one embodiment, the entire polishing layer (including portions of the recess) can be opaque. However, in another embodiment, the portion on the recess is transparent to aid in positioning the polishing pad on the platen.

According to an embodiment of the present invention, the problem solved herein includes the following case, the eddy current end point detecting hardware includes a sensor that rises upwardly from the plane of the platen by about 0.070 ,, so that The sensor is at an optimal distance from the wafer surface. However, this situation can cause problems in the design and performance of the polishing pad, and embodiments of the present invention can provide an advantageous solution to these problems. In an embodiment, the polishing pad is designed to accommodate an eddy current sensor, typically by means of a recess formed in the back of the polishing pad. In a particular embodiment, this is accomplished using a recess of about 0.080 inch depth in the polishing pad.

In one aspect of the invention, a polishing pad designed to accommodate an eddy current endpoint detection system, such as the polishing pad described in the various embodiments above, is adhered to the platen 1004 by an adhesive surface. For example, in one embodiment, the polishing pad is adhesively coupled to the platen 1004 using an unsupported film adhesive (ie, a transfer adhesive). In such cases, since no permanent carrier film is transferred to the platen with the pad, there is no need to cut the opening in the temporary or sacrificial release liner removed from the polishing pad prior to transfer to the platen. In one embodiment, the temporary or sacrificial release liner is removed from the polishing pad leaving the adhesive film intact. Any portion of the film that spans the recess in the polishing pad, such as the recess formed to accommodate the eddy current sensing system, will remain with the release liner or it will remain as a film across the opening of the recess. In the latter case, it may be necessary to remove the portion of the film that spans the opening of the recess prior to mounting the polishing pad on the platen. In one embodiment, the sacrificial release liner and the adhesive film retained on the polishing pad are both non-double-sided tape.

Accordingly, polishing pads for polishing a semiconductor substrate using eddy current endpoints have been disclosed. According to an embodiment of the invention, a polishing pad for polishing a semiconductor substrate includes a molded homogeneous polishing body. The molded homogeneous polishing body has a polished surface and a rear surface. The polishing pad also includes an endpoint detection region disposed in the molded homogeneous polishing body and covalently bonded thereto. The endpoint detection area is constructed of a different material than the molded homogeneous polishing body, at least a portion of the endpoint detection area being recessed relative to the surface after molding the homogeneous polishing body. In accordance with another embodiment of the present invention, a polishing pad for polishing a semiconductor substrate includes a molded homogeneous polishing body having a polished surface and a back surface. The groove pattern is disposed in the polishing surface, and the groove pattern has a bottom depth. The polishing pad also includes an end point detection area formed in the molded homogeneous polishing body. Endpoint detection area has been polished The surface oriented first surface and the second surface oriented by the back surface. At least a portion of the first surface is coplanar with the bottom of the groove pattern and interrupts the groove pattern. The second surface is recessed into the molded homogeneous polishing body relative to the rear surface.

100‧‧‧ polishing pad

102‧‧‧Molded homogeneous polished body

104‧‧‧ Polished surface

106‧‧‧Back surface

108‧‧‧Endpoint detection area

110‧‧‧Materials

112‧‧‧covalent bonding

114‧‧‧ first surface

116‧‧‧ second surface

150‧‧‧ Groove

D‧‧‧ Depth of depression

T1‧‧·The thickness of the molded homogeneous body

Thickness of the part of the T2‧‧‧ molded homogeneous polished body except the groove of the polished surface

Thickness of material in the T3‧‧‧ endpoint detection area

Claims (20)

A polishing pad for polishing a semiconductor substrate, the polishing pad comprising: a molded homogeneous polishing body comprising a polishing surface and a rear surface; a groove pattern disposed in the polishing surface, the groove pattern having a bottom depth; and forming An endpoint detection region in the molded homogeneous polishing body, the endpoint detection region having a first surface oriented by the polishing surface and a second surface oriented by the rear surface, at least a portion of the first surface and the The bottom portion of the groove pattern is coplanar and interrupts the groove pattern, and the second surface is recessed into the molded homogeneous polishing body relative to the back surface. The polishing pad of claim 1, wherein the entire first surface of the endpoint detection region is substantially coplanar with the bottom depth of the groove pattern. The polishing pad of claim 1, wherein the first surface of the end point detecting area comprises a second groove pattern having a bottom depth of the groove pattern disposed in the polishing surface Basically the depth of the coplanar. The polishing pad of claim 3, wherein the groove pattern and the individual grooves of the second groove pattern are spaced apart by a width, and wherein the second groove pattern is offset from the groove pattern by a distance greater than the width. The polishing pad of claim 1, wherein the molded homogeneous polishing body comprises a thermosetting closed cell polyurethane material. The polishing pad of claim 1, wherein the molded homogeneous polishing body including the end point detection area is opaque. A method of manufacturing a polishing pad for polishing a semiconductor substrate, the method comprising: forming a polishing pad precursor mixture in a forming mold; positioning a cover of the forming mold in the polishing pad precursor mixture, the cover Forming a groove pattern thereon, the groove pattern having an interruption region; curing the polishing pad precursor mixture to provide a molded homogeneous polishing body comprising a polished surface and a back surface, wherein the groove pattern from the cover is disposed on In the polishing surface, the groove pattern has a bottom depth; and an end detection region is provided in the molded homogeneous polishing body, the end detection region having a first surface oriented by the polishing surface and the rear surface Orienting the second surface, at least a portion of the first surface being coplanar with the bottom depth of the groove pattern and including the discontinuity region of the groove pattern, and the second surface is recessed into the molding homogenity relative to the rear surface In the polished body. The method of claim 7, wherein the providing the endpoint detection area is performed by scooping a portion of the molded homogeneous polishing body. The method of claim 7, wherein the providing the endpoint detection region is performed by removing a sacrificial layer embedded in the molded homogeneous polishing body. The method of claim 7, wherein the entire first surface of the endpoint detection region is substantially coplanar with the bottom depth of the groove pattern. The method of claim 7, wherein the first surface of the endpoint detection region comprises a second groove pattern having the recess disposed in the polishing surface of the molded homogeneous polishing body The bottom depth of the groove pattern is substantially coplanar depth. The method of claim 11, wherein the groove pattern and the individual grooves of the second groove pattern are spaced apart by a width, and wherein the second groove pattern is offset from the first groove pattern by a distance greater than the width. The method of claim 11, wherein the molded homogeneous polishing body comprises a thermosetting closed cell polyurethane material. The method of claim 7, wherein the molded homogeneous polishing body including the endpoint detection region is opaque. A method of fabricating a polishing pad for polishing a semiconductor substrate, the method comprising: Forming a polishing pad by a molding process, the polishing pad comprising: a homogenous polishing body having a polishing surface and a rear surface; a groove pattern disposed in the polishing surface, the groove pattern having a bottom depth; and forming in the mold Forming an endpoint detection region in the homogeneous polishing body, the endpoint detection region having a first surface oriented by the polishing surface and a second surface oriented by the rear surface, at least a portion of the first surface and the groove pattern The bottom depth is coplanar and interrupts the groove pattern, and the second surface is recessed into the molded homogeneous polishing body relative to the back surface. The method of claim 15, wherein the entire first surface of the endpoint detection region is substantially coplanar with the bottom depth of the groove pattern. The method of claim 15, wherein the first surface of the endpoint detection region comprises a second groove pattern having a depth substantially different from a depth of the groove pattern disposed in the polishing surface The depth of the total plane. The method of claim 17, wherein the groove pattern and the individual grooves of the second groove pattern are spaced apart by a width, and wherein the second groove pattern is offset from the groove pattern by a distance greater than the width. The method of claim 15, wherein the molded homogeneous polishing body comprises a thermosetting closed cell polyurethane material. The method of claim 15, wherein the molded homogeneous polishing body including the endpoint detection area is opaque.