TWI500015B - Bi-direction circuit, gate driver and testing circuit utilizing the same - Google Patents
Bi-direction circuit, gate driver and testing circuit utilizing the same Download PDFInfo
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本發明係關於一種閘極驅動器,特別是一種應用於雙向掃描的閘極驅動器。The present invention relates to a gate driver, and more particularly to a gate driver for bidirectional scanning.
雙向電路(bi-direction circuit)作為移位暫存器(shift register)中用來決定掃描方向的電路,其訊號傳遞延遲(propagation delay)與所傳遞訊號的電壓位準是十分重要的課題。訊號傳遞延遲越短,則移位暫存器的操作頻率可以越高。而所傳遞訊號的電壓位準直接關聯到雜訊邊界(noise margin),也就是關係到了電路的抗雜訊能力。然而在薄膜電晶體製程(thin-film-transistor process,TFT process)中,由於製程限制了電晶體的類型,因此在TFT製程中的雙向電路往往會有較長的傳遞延遲,且所傳遞的訊號的電壓位準可能不盡理想。如何縮短TFT製程中的雙向電路的傳遞延遲並使所傳遞訊號的電壓位準更準確,是一個待克服的問題。The bi-direction circuit is used as a circuit for determining the scanning direction in a shift register. The signal propagation delay and the voltage level of the transmitted signal are very important issues. The shorter the signal transfer delay, the higher the operating frequency of the shift register can be. The voltage level of the transmitted signal is directly related to the noise margin, which is related to the anti-noise capability of the circuit. However, in the thin-film-transistor process (TFT process), since the process limits the type of the transistor, the bidirectional circuit in the TFT process tends to have a long transfer delay and the transmitted signal. The voltage level may not be ideal. How to shorten the transfer delay of the bidirectional circuit in the TFT process and make the voltage level of the transmitted signal more accurate is a problem to be overcome.
有鑑於以上的問題,本發明提出一種雙向選擇電路 以及應用此雙向選擇電路的閘極驅動器與測試電路。所揭露的雙向電路以寄生電容將開關的控制端電壓推升到高於輸入訊號的一個電壓位準,從而保證開關可以完整的將輸入訊號傳遞至雙向電路的輸出端。In view of the above problems, the present invention proposes a bidirectional selection circuit And a gate driver and test circuit using the bidirectional selection circuit. The disclosed bidirectional circuit uses a parasitic capacitance to push the control terminal voltage of the switch to a voltage level higher than the input signal, thereby ensuring that the switch can completely transmit the input signal to the output of the bidirectional circuit.
依據本發明一個或多個實施例所揭露的一種雙向選擇電路,包括:第一開關、第二開關、第三開關、第四開關、第五開關與第六開關。其中第一開關具有第一端、第二端及控制端,其中第一開關的第一端與第一開關的控制端耦接至一個第一選擇端。第二開關具有第一端、第二端及控制端,其中第二開關的第一端耦接至第一開關的第二端,第二開關的第二端耦接至一個重置端,第二開關的控制端耦接至第二選擇端。第三開關具有第一端、第二端及控制端,其中第三開關的第一端與第三開關的控制端耦接至第二選擇端。第四開關具有第一端、第二端及控制端,其中第四開關的第一端耦接至第三開關的第二端,第四開關的第二端耦接至重置端,第四開關的控制端耦接至第一選擇端。第五開關具有第一端、第二端及控制端,其中第五開關的第一端耦接至第一輸入端,第五開關的控制端耦接至第一開關的第二端,第五開關的第二端耦接至輸出端。第六開關具有第一端、第二端及控制端,其中第六開關的第一端耦接至第二輸入端,第六開關的控制端耦接至第三開關的第二端,第六開關的第二端耦接至輸出端。A bidirectional selection circuit according to one or more embodiments of the present invention includes: a first switch, a second switch, a third switch, a fourth switch, a fifth switch, and a sixth switch. The first switch has a first end, a second end, and a control end, wherein the first end of the first switch and the control end of the first switch are coupled to a first selection end. The second switch has a first end, a second end, and a control end, wherein the first end of the second switch is coupled to the second end of the first switch, and the second end of the second switch is coupled to a reset end, The control end of the two switches is coupled to the second selection end. The third switch has a first end, a second end, and a control end, wherein the first end of the third switch and the control end of the third switch are coupled to the second selection end. The fourth switch has a first end, a second end, and a control end, wherein the first end of the fourth switch is coupled to the second end of the third switch, and the second end of the fourth switch is coupled to the reset end, and the fourth The control end of the switch is coupled to the first selection end. The fifth switch has a first end, a second end, and a control end, wherein the first end of the fifth switch is coupled to the first input end, and the control end of the fifth switch is coupled to the second end of the first switch, the fifth The second end of the switch is coupled to the output end. The sixth switch has a first end, a second end, and a control end, wherein the first end of the sixth switch is coupled to the second input end, and the control end of the sixth switch is coupled to the second end of the third switch, sixth The second end of the switch is coupled to the output end.
於本發明一個實施例中,揭露一種應用前述雙向電 路的閘極驅動器,所述閘極驅動器包括多個移位暫存器,每一個移位暫存器中使用了前述的雙向電路。In an embodiment of the present invention, an application of the foregoing two-way power is disclosed The gate driver of the circuit, the gate driver includes a plurality of shift registers, and each of the shift registers uses the aforementioned bidirectional circuit.
於本發明另一個實施例中,揭露一種應用前述雙向電路的測試電路,可用於測試多個移位暫存器的功能是否正常。In another embodiment of the present invention, a test circuit applying the foregoing bidirectional circuit is disclosed, which can be used to test whether the functions of a plurality of shift registers are normal.
以上之關於本發明內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。The above description of the present invention and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention.
1、3A、3B‧‧‧雙向電路1, 3A, 3B‧‧‧ bidirectional circuit
4、SR1 ~SRN ‧‧‧移位暫存器4, SR 1 ~ SR N ‧ ‧ shift register
41‧‧‧控制電路41‧‧‧Control circuit
5‧‧‧測試電路5‧‧‧Test circuit
C35A 、C35B 、C36A 、C36B ‧‧‧電容C 35A , C 35B , C 36A , C 36B ‧‧‧ capacitors
IN1 、IN2 ‧‧‧輸入端IN 1 , IN 2 ‧‧‧ input
OUT‧‧‧輸出端OUT‧‧‧ output
SW1 ~SW6 ‧‧‧開關SW 1 ~SW 6 ‧‧‧Switch
SEL1 、SEL2 ‧‧‧選擇端SEL 1 , SEL 2 ‧‧‧Selection
SCAN1 、SCAN2 ‧‧‧控制線SCAN 1 , SCAN 2 ‧‧‧ control line
RST‧‧‧重置端RST‧‧‧Reset
VRST ‧‧‧重置電壓V RST ‧‧‧Reset voltage
VS1 、VS2 ‧‧‧選擇訊號V S1 , V S2 ‧‧‧Selection signal
VIN1 、VIN2 ‧‧‧輸入訊號V IN1 , V IN2 ‧‧‧ input signal
VC5 、VC6 ‧‧‧控制電壓V C5 , V C6 ‧‧‧ control voltage
VOUT ‧‧‧輸出訊號V OUT ‧‧‧ output signal
VH ‧‧‧高電壓V H ‧‧‧High voltage
VL ‧‧‧低電壓V L ‧‧‧Low voltage
VBOOST ‧‧‧導通電壓V BOOST ‧‧‧ON voltage
VTH‧‧‧門檻電壓VTH‧‧‧ threshold voltage
T1 ~T9 ‧‧‧時間點T 1 ~T 9 ‧‧‧ time
第1圖係依據本發明一實施例的雙向電路示意圖。1 is a schematic diagram of a bidirectional circuit in accordance with an embodiment of the present invention.
第2圖係依據本發明一實施例中的多個電壓波型時序圖。2 is a timing diagram of a plurality of voltage waveforms in accordance with an embodiment of the present invention.
第3A圖係依據本發明一實施例的雙向電路示意圖。3A is a schematic diagram of a bidirectional circuit in accordance with an embodiment of the present invention.
第3B圖係依據本發明一實施例的雙向電路示意圖。Figure 3B is a schematic diagram of a bidirectional circuit in accordance with an embodiment of the present invention.
第4圖係依據本發明一實施例的移位暫存器電路示意圖。4 is a schematic diagram of a shift register circuit in accordance with an embodiment of the present invention.
第5圖係依據本發明一實施例的雙向電路應用於移位暫存器 測試電路的電路示意圖。Figure 5 is a diagram showing a bidirectional circuit applied to a shift register according to an embodiment of the present invention. Circuit diagram of the test circuit.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何 觀點限制本發明之範疇。The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to further illustrate the aspects of the invention, but not any The views limit the scope of the invention.
鑒於前述問題,本發明揭露一種可以適用於薄膜電晶體製程(thin-film-transistor process,TFT process)的雙向電路。所揭露的雙向電路可以被用在顯示面板的閘極驅動器與測試電路中,並且所揭露的雙向電路具有較短的傳遞延遲(propagation delay)與較大的雜訊邊界(noise margin)。In view of the foregoing, the present invention discloses a bidirectional circuit that can be applied to a thin-film-transistor process (TFT process). The disclosed bidirectional circuit can be used in the gate driver and test circuit of the display panel, and the disclosed bidirectional circuit has a shorter propagation delay and a larger noise margin.
請參照第1圖,其係依據本發明一實施例的雙向電路示意圖。如第1圖所示,雙向電路1包括第一開關SW1 、第二開關SW2 、第三開關SW3 、第四開關SW4 、第五開關SW5 與第六開關SW6 。所述六個開關都是薄膜電晶體開關,且如第1圖所示,六個開關都是N型電晶體。然而,於另一種實施態樣中,六個開關亦可以都是P型電晶體。Please refer to FIG. 1 , which is a schematic diagram of a bidirectional circuit according to an embodiment of the invention. As shown, a first bidirectional circuit of FIG. 1 comprises a first switch SW 1, a second switch SW 2, the third switch SW 3, the fourth switch SW 4, the fifth switch SW 5 and the sixth switch SW 6. The six switches are thin film transistor switches, and as shown in Figure 1, the six switches are all N-type transistors. However, in another embodiment, the six switches may also be P-type transistors.
第一開關SW1 的第一端與第一開關SW1 的控制端(閘極端)都耦接至雙向電路1的第一選擇端SEL1 ,而第一開關SW1 的第二端耦接至第五開關SW5 的控制端。而第二開關SW2 的第一端耦接至第一開關SW1 的第二端與第五開關SW5 的控制端。第二開關SW2 的第二端耦接至重置端RST,而第二開關SW2 的控制端耦接至雙向電路1的第二選擇端SEL2 。第五開關SW5 的第一端耦接至雙向電路1的第一輸入端IN1 ,而第五開關SW5 的第二端耦接至雙向電路1的輸出端OUT。A first terminal of a first switch SW 1 and the control terminal of the first switch SW 1 (gate terminal) are coupled to the first selection terminal of the SEL 1 a bidirectional circuit, and a second terminal of the first switch SW 1 is coupled to the control terminal of the fifth switch SW 5. The first end of the second switch SW 2 is coupled to the second end of the first switch SW 1 and the control end of the fifth switch SW 5 . The second end of the second switch SW 2 is coupled to the reset terminal RST, and the control end of the second switch SW 2 is coupled to the second selection terminal SEL 2 of the bidirectional circuit 1 . The first end of the fifth switch SW 5 is coupled to the first input terminal IN 1 of the bidirectional circuit 1 , and the second end of the fifth switch SW 5 is coupled to the output end OUT of the bidirectional circuit 1 .
第三開關SW3 的第一端與第三開關SW3 的控制端都耦接至雙向電路1的第二選擇端SEL2 ,而第三開關SW3 的第二 端耦接至第六開關SW6 的控制端。而第四開關SW4 的第一端耦接至第三開關SW3 的第二端與第六開關SW6 的控制端。第四開關SW4 的第二端耦接至重置端RST,而第四開關SW4 的控制端耦接至雙向電路1的第一選擇端SEL1 。第六開關SW6 的第一端耦接至雙向電路1的第二輸入端IN2 ,而第六開關SW6 的第二端耦接至雙向電路1的輸出端OUT。The control terminal of the third switch SW 3 a first end of the third switch SW 3 are coupled to the second selection terminal of the bidirectional circuit SEL 2, and the second terminal of the third switch SW 3 is coupled to the sixth switch SW The control end of 6 . The first end of the fourth switch SW 4 is coupled to the second end of the third switch SW 3 and the control end of the sixth switch SW 6 . The second end of the fourth switch SW 4 is coupled to the reset terminal RST, and the control end of the fourth switch SW 4 is coupled to the first selection terminal SEL 1 of the bidirectional circuit 1 . The first end of the sixth switch SW 6 is coupled to the second input terminal IN 2 of the bidirectional circuit 1 , and the second end of the sixth switch SW 6 is coupled to the output end OUT of the bidirectional circuit 1 .
第一選擇端SEL1 用以接收第一選擇訊號VS1 ,而第二選擇端SEL2 用以接收第二選擇訊號VS2 ,第一輸入端IN1 用以接收第一輸入訊號VIN1 ,而第二輸入端IN2 用以接收第二輸入訊號VIN2 ,重置端RST用以接收重置電壓VRST ,其中重置電壓VRST 於本實施例中為低電壓VL 。於本實施例中,第五開關SW5 的控制端電壓為控制電壓VC5 ,第六開關SW6 的控制端電壓為控制電壓VC6 ,從輸出端OUT輸出的是輸出訊號VOUT。The first selection terminal SEL 1 is configured to receive the first selection signal V S1 , and the second input terminal SEL 2 is configured to receive the second input signal V S1 , and the first input terminal IN 1 is configured to receive the first input signal V IN1 , and The second input terminal IN 2 is for receiving the second input signal V IN2 , and the reset terminal RST is for receiving the reset voltage V RST , wherein the reset voltage V RST is a low voltage V L in this embodiment. In this embodiment, the control terminal voltage of the fifth switch SW 5 is the control voltage V C5 , the control terminal voltage of the sixth switch SW 6 is the control voltage V C6 , and the output signal VOUT is output from the output terminal OUT.
第2圖係依據本發明一實施例中的多個電壓波型時序圖,以下請一併參照第1圖和第2圖。在第一時間點T1 到第五時間點T5 之間,第一選擇訊號VS1 的電壓位準為高電壓VH ,第二選擇訊號VS2 的電壓位準為低電壓VL ,因此在第一時間點T1 開始直到第二時間點T2 之間,第一開關SW1 會把控制電壓VC5 的電壓位準提高,而控制電壓VC6 的電壓位準會被第四開關SW4 下拉至重置電壓VRST ,也就是低電壓VL ,此時輸出訊號VOUT 的電壓位準為低電壓VL 。當控制電壓VC5 的電壓位準被拉高至等於高電壓VH 減去第一開關SW1 的門檻電壓VTH時,第一開關SW1 的控制端與第二端之間的電壓差剛好等於第一開關SW1 的門檻電壓VTH,因此第一開關SW1 不再導通,而控制電壓VC5 就被維持在高電壓VH 減去第一開關SW1 的門檻電壓VTH。因為第五開關SW5 的兩端與控制端之間的寄生電容,所以第五開關SW5 的兩端與控制端的電壓差會固定為高電壓VH 減去門檻電壓VTH與低電壓VL 的差值。Fig. 2 is a timing chart of a plurality of voltage waveforms according to an embodiment of the present invention. Please refer to Figs. 1 and 2 hereinafter. Between the first time point T 1 and the fifth time point T 5 , the voltage level of the first selection signal V S1 is a high voltage V H , and the voltage level of the second selection signal V S2 is a low voltage V L , so Between the first time point T 1 and the second time point T 2 , the first switch SW 1 increases the voltage level of the control voltage V C5 , and the voltage level of the control voltage V C6 is used by the fourth switch SW 4 pulls down to the reset voltage V RST , that is, the low voltage V L , at which time the voltage level of the output signal V OUT is the low voltage V L . When the control voltage V C5 voltage level is pulled up to the high voltage V H is equal to minus the first threshold voltage VTH 1 switch SW, the voltage difference between the control terminal of the first out switch SW 1 is exactly equal to the second end a first switch SW of the threshold voltage VTH. 1, the first no longer out switch SW 1 is turned on while the control voltage V C5 threshold voltage VTH is maintained at a high voltage V H of subtracting the first out switch SW 1. Since both ends of the parasitic capacitance between the control terminal of the fifth switch SW 5, the fifth switch SW so that the voltage difference across the control terminal 5 will be fixed to a high voltage minus the threshold voltage VTH V H and V L of the low voltage Difference.
其中,在第二時間點T2 時,第一輸入訊號VIN1 的電壓位準從低電壓VL 變成高電壓VH ,因此可以看到從第二時間點T2 開始,控制電壓VC5 的電壓位準被第五開關SW5 的兩端與控制端之間的寄生電容而抬升至導通電壓VBOOST 。此時導通電壓VBOOST 的電壓值可以下列方程式(1)描述:VBOOST =2VH -VL -VTH (1)而導通電壓VBOOST 與高電壓VH 的電位差可以表示為下列方程式(2):VBOOST -VH =VH -VL -VTH (2)因此,假設第一開關SW1 與第五開關SW5 的門檻電壓都是門檻電壓VTH,則只要高電壓VH 與低電壓VL 的電位差大於等於兩倍的門檻電壓VTH,就可以保證當第一輸入訊號VIN1 的電壓位準為高電壓VH 時,第五開關SW5 可以導通直到輸出訊號VOUT 的電壓位準也被拉高到高電壓VH ,如第2圖所示。然而,實作上會使高電壓VH 與低電壓VL 的電位差大於兩倍的門檻電壓VTH。Wherein, at the second time point T 2 , the voltage level of the first input signal V IN1 changes from the low voltage V L to the high voltage V H , so that it can be seen that the control voltage V C5 is started from the second time point T 2 . The voltage level is raised to the turn-on voltage V BOOST by the parasitic capacitance between both ends of the fifth switch SW 5 and the control terminal. At this time, the voltage value of the turn-on voltage V BOOST can be described by the following equation (1): V BOOST = 2V H - V L - VTH (1) and the potential difference between the turn-on voltage V BOOST and the high voltage V H can be expressed as the following equation (2) :V BOOST -V H =V H -V L -VTH (2) Therefore, assuming that the threshold voltages of the first switch SW 1 and the fifth switch SW 5 are both the threshold voltage VTH, as long as the high voltage V H and the low voltage V When the potential difference of L is greater than or equal to twice the threshold voltage VTH, it can be ensured that when the voltage level of the first input signal V IN1 is the high voltage V H , the fifth switch SW 5 can be turned on until the voltage level of the output signal V OUT is also Pulled high to high voltage V H as shown in Figure 2. However, in practice, the potential difference between the high voltage V H and the low voltage V L is greater than twice the threshold voltage VTH.
而在第三時間點T3 時,第一輸入訊號VIN1 的電壓位 準從高電壓VH 變成低電壓VL ,因此輸出訊號VOUT 的電壓位準被第五開關SW5 拉至與第一輸入訊號VIN1 的電壓位準相同,也就是低電壓VL 。雖然在同時,第二輸入訊號VIN2 的電壓位準從低電壓VL 變成高電壓VH ,然而因為控制電壓VC6 的電壓位準被第四開關SW4 拉至低電壓,因此第六開關SW6 不導通,所以第二輸入訊號VIN 的電壓位準改變不會影響輸出訊號VOUT 的電壓位準。更明確來說,在第一時間點T1 到第五時間點T5 之間,第六開關SW6 都不會導通,因此第二輸入訊號VIN2 的電壓位準改變不會影響輸出訊號VOUT 的電壓位準。At the third time point T 3 , the voltage level of the first input signal V IN1 changes from the high voltage V H to the low voltage V L , so the voltage level of the output signal V OUT is pulled to the fifth switch SW 5 . The voltage level of an input signal V IN1 is the same, that is, the low voltage V L . Although at the same time, the voltage level of the second input signal V IN2 changes from the low voltage V L to the high voltage V H , since the voltage level of the control voltage V C6 is pulled to the low voltage by the fourth switch SW 4 , the sixth switch SW 6 does not conduct, so the voltage level change of the second input signal V IN does not affect the voltage level of the output signal V OUT . More specifically, between the first time point T 1 and the fifth time point T 5 , the sixth switch SW 6 is not turned on, so the voltage level change of the second input signal V IN2 does not affect the output signal V. The voltage level of OUT .
在第四時間點T4 ,第一輸入訊號VIN1 的電壓位準又從低電壓VL 變成高電壓VH ,因此輸出訊號VOUT 的電壓位準被第五開關SW5 拉至與第一輸入訊號VIN1 的電壓位準相同,也就是高電壓VH 。At the fourth time point T 4 , the voltage level of the first input signal V IN1 changes from the low voltage V L to the high voltage V H , so the voltage level of the output signal V OUT is pulled to the first by the fifth switch SW 5 . The voltage level of the input signal V IN1 is the same, that is, the high voltage V H .
在第五時間點T5 ,第一選擇訊號VS1 的電壓位準從高電壓VH 變成低電壓VL ,第二選擇訊號VS2 的電壓位準從低電壓VL 變成低電壓VH ,因此在第五時間點T5 之後,第二開關SW2 會把控制電壓VC6 的電壓位準逐漸提高,而控制電壓VC5 的電壓位準會被第二開關SW2 拉至重置電壓VRST ,也就是低電壓VL ,因此第六開關SW6 在第五時間點T5 後導通,而第五開關SW5 則不導通。並由於第一輸入訊號VIN1 與第二輸入訊號VIN2 的電壓位準在第五時間點都由高電壓VH 變成低電壓VL ,因此第五時間點T5 開始,輸出訊號VOUT 的電壓位準會被第六開關SW6 強制拉到 與第二輸入訊號相同。而當控制電壓VC6 的電壓位準被拉高至等於高電壓VH 減去第三開關SW3 的門檻電壓VTH(此處假設六個開關的門檻電壓均相同)時,第三開關SW3 的控制端與第二端之間的電壓差剛好等於第三開關SW3 的門檻電壓VTH,因此第三開關SW3 不再導通,而控制電壓VC6 就被維持在高電壓VH 減去第三開關SW3 的門檻電壓VTH。因為第六開關SW6 的兩端與控制端之間的寄生電容,所以第六開關SW6 的兩端與控制端的電壓差會固定為高電壓VH 減去門檻電壓VTH與低電壓VL 的差值。At the fifth time point T 5 , the voltage level of the first selection signal V S1 changes from the high voltage V H to the low voltage V L , and the voltage level of the second selection signal V S2 changes from the low voltage V L to the low voltage V H , Therefore, after the fifth time point T 5 , the second switch SW 2 gradually increases the voltage level of the control voltage V C6 , and the voltage level of the control voltage V C5 is pulled to the reset voltage V by the second switch SW 2 . RST , that is, the low voltage V L , so the sixth switch SW 6 is turned on after the fifth time point T 5 , and the fifth switch SW 5 is turned off. And since the voltage levels of the first input signal V IN1 and the second input signal V IN2 are changed from the high voltage V H to the low voltage V L at the fifth time point, the fifth time point T 5 starts, and the output signal V OUT is output. The voltage level is forcibly pulled by the sixth switch SW 6 to be the same as the second input signal. When the voltage level of the control voltage V C6 is pulled up to be equal to the high voltage V H minus the threshold voltage VTH of the third switch SW 3 (here, the threshold voltages of the six switches are all the same), the third switch SW 3 the voltage difference between the control terminal and the second terminal of the switch SW is exactly equal to the third threshold voltage VTH 3, and therefore the third switch SW is turned on no. 3, while the control voltage V C6 was maintained at a high voltage V H subtracting three switch SW of the threshold voltage VTH 3. Since the parasitic capacitance between the control terminal of the sixth switch SW 6 and the two ends, the voltage difference across the control terminal of the sixth switch SW 6 will be fixed to a high voltage by subtracting the threshold voltage VTH V H and V L of the low voltage Difference.
之後,在第六時間點T6 時,第二輸入訊號VIN2 的電壓位準從低電壓VL 變成高電壓VH ,因此可以看到從第六時間點T6 開始,控制電壓VC6 的電壓位準被第六開關SW6 的兩端與控制端之間的寄生電容而推至導通電壓VBOOST 。如同前述,只要高電壓VH 與低電壓VL 的電位差大於等於兩倍的門檻電壓VTH,就可以保證當第二輸入訊號VIN2 的電壓位準為高電壓VH 時,第六開關SW6 可以導通直到輸出訊號VOUT 的電壓位準也被拉高到高電壓VH ,如第2圖所示。Thereafter, at the sixth time point T 6 , the voltage level of the second input signal V IN2 changes from the low voltage V L to the high voltage V H , so that it can be seen that the control voltage V C6 starts from the sixth time point T 6 . The voltage level is pushed to the turn-on voltage V BOOST by the parasitic capacitance between the both ends of the sixth switch SW 6 and the control terminal. As described above, as long as the potential difference between the high voltage V H and the low voltage V L is greater than or equal to twice the threshold voltage VTH, it can be ensured that when the voltage level of the second input signal V IN2 is the high voltage V H , the sixth switch SW 6 It can be turned on until the voltage level of the output signal V OUT is also pulled high to the high voltage V H , as shown in Figure 2.
而在第七時間點T7 時,第二輸入訊號VIN2 的電壓位準從高電壓VH 變成低電壓VL ,因此輸出訊號VOUT 的電壓位準被第六開關SW6 拉至與第二輸入訊號VIN2 的電壓位準相同,也就是低電壓VL 。雖然在同時,第一輸入訊號VIN1 的電壓位準從低電壓VL 變成高電壓VH ,然而因為控制電壓VC5 的電壓位準被第二開關SW4 拉至低電壓,因此第五開關SW5 不導通,所以第一輸入 訊號VIN1 的電壓位準改變不會影響輸出訊號VOUT 的電壓位準。更明確來說,在第五時間點T5 到第九時間點T9 之間,第五開關SW5 都不會導通,因此第一輸入訊號VIN1 的電壓位準改變不會影響輸出訊號VOUT 的電壓位準。In the seventh time point T 7, the voltage level of the second input signal V IN2 of the low voltage V L becomes a quasi from the high voltage V H, the output signal V OUT of the voltage level of the sixth switch SW 6 is pulled to the first The voltage level of the two input signals V IN2 is the same, that is, the low voltage V L . Although at the same time, the voltage level of the first input signal V IN1 changes from the low voltage V L to the high voltage V H , since the voltage level of the control voltage V C5 is pulled to the low voltage by the second switch SW 4 , the fifth switch SW 5 does not conduct, so the voltage level change of the first input signal V IN1 does not affect the voltage level of the output signal V OUT . More specifically, between the fifth time point T 5 and the ninth time point T 9 , the fifth switch SW 5 is not turned on, so the voltage level change of the first input signal V IN1 does not affect the output signal V. The voltage level of OUT .
在第八時間點T8 ,第二輸入訊號VIN2 的電壓位準又從低電壓VL 變成高電壓VH ,因此輸出訊號VOUT 的電壓位準被第六開關SW6 拉至與第二輸入訊號VIN2 的電壓位準相同,也就是高電壓VH 。At the eighth time point T 8 , the voltage level of the second input signal V IN2 changes from the low voltage V L to the high voltage V H , so the voltage level of the output signal V OUT is pulled to the second by the sixth switch SW 6 . The voltage level of the input signal V IN2 is the same, that is, the high voltage V H .
依據前述實施例,本發明的控制電壓VC5 與控制電壓VC6 可以在第一輸入訊號VIN1 與第二輸入訊號VIN2 改變時,選擇性的對應改變,從而使第五開關SW5 及/或第六開關SW6 具有較高的導通能力,因此傳播延遲被縮短了。According to the foregoing embodiment, the control voltage V C5 and the control voltage V C6 of the present invention can selectively change correspondingly when the first input signal V IN1 and the second input signal V IN2 are changed, so that the fifth switch SW 5 and / Or the sixth switch SW 6 has a high conduction capability, so the propagation delay is shortened.
於本發明一實施例中,請參照第3A圖與第3B圖,其係分別為本發明一實施例的雙向電路示意圖。如第3A圖所示,相較於第1圖的雙向電路1,第3A圖的雙向電路3A更包括了電容C35A 與電容C36A 。電容C35A 電性連接於第五開關SW5 的控制端與第二端之間,而電容C36A 電性連接於第六開關SW6 的控制端與第二端之間。第1圖中的雙向電路1的第五開關SW5 與第六開關SW6 是藉由寄生電容,使得第一輸入訊號VIN1 與第二輸入訊號VIN2 的電壓位準提高時,控制電壓VC5 與控制電壓VC6 可以被提高到導通電壓VBOOST ,然而由於電路的非理想特性,控制電壓VC5 與控制電壓VC6 可能會因為漏電流而慢慢下降,不再維持於 導通電壓VBOOST 。因此,額外增加電容C35A 與電容C36A 可以減緩漏電流導致控制電壓VC5 與控制電壓VC6 逐漸下降的現象。而也可以如第3B圖所示,雙向電路3B可以有電容C35B 電性連接於第五開關SW5 的控制端與第一端之間,還有電容C36B 電性連接於第六開關SW6 的控制端與第一端之間。In an embodiment of the present invention, please refer to FIGS. 3A and 3B, which are schematic diagrams of a bidirectional circuit according to an embodiment of the present invention. As shown in FIG. 3A, the bidirectional circuit 3A of FIG. 3A further includes a capacitor C 35A and a capacitor C 36A as compared with the bidirectional circuit 1 of FIG. The capacitor C 35A is electrically connected between the control end and the second end of the fifth switch SW 5 , and the capacitor C 36A is electrically connected between the control end and the second end of the sixth switch SW 6 . The fifth switch SW 5 and the sixth switch SW 6 of the bidirectional circuit 1 in FIG. 1 are controlled by a parasitic capacitance such that the voltage levels of the first input signal V IN1 and the second input signal V IN2 are increased, and the control voltage V is C5 and the control voltage V C6 can be raised to the turn-on voltage V BOOST , however, due to the non-ideal characteristics of the circuit, the control voltage V C5 and the control voltage V C6 may gradually decrease due to leakage current, and are no longer maintained at the turn-on voltage V BOOST . Therefore, the additional increase of the capacitance C 35A and the capacitance C 36A can alleviate the phenomenon that the leakage current causes the control voltage V C5 and the control voltage V C6 to gradually decrease. Alternatively, as shown in FIG. 3B, the bidirectional circuit 3B may have a capacitor C 35B electrically connected between the control end of the fifth switch SW 5 and the first end, and a capacitor C 36B electrically connected to the sixth switch SW. The control end of 6 is between the first end and the first end.
上述的雙向電路用在移位暫存器的實施例請參照第4圖,其係依據本發明一實施例的移位暫存器電路示意圖。如第4圖所示,移位暫存器4可以包括雙向電路的結構,並包括一個控制電路以及開關SW7 與開關SW8 。其中,開關SW7 的控制端電性耦接控制電路41,而開關SW7 的第一端電性耦接至時脈端CLK,第二端電性耦接至輸出端OUT。由於從雙向電路傳入控制電路41的訊號的電壓位準可以是準確的高電壓VH 或低電壓VL 。因此開關SW7 的控制端預存的電壓位準也可以是準確的高電壓VH 或低電壓VL 。當時脈端CLK的電壓位準由低電壓VL 提升至高電壓VH 時,開關SW7 的控制端的電壓位準一如雙向電路中控制電壓VC5 或控制電壓VC6 ,可以被寄生電容提高到較高的電壓位準。從而使移位暫存器4的輸出端OUT的電壓改變的速度較快。For the embodiment of the above-described bidirectional circuit used in the shift register, please refer to FIG. 4, which is a schematic diagram of a shift register circuit according to an embodiment of the present invention. As shown in FIG. 4, the shift register 4 may include a structure of a bidirectional circuit and includes a control circuit and a switch SW 7 and a switch SW 8 . Wherein the control terminal of the switch SW 7 is electrically coupled to the control circuit 41, a first terminal of the switch SW 7 is electrically coupled to the clock terminal CLK while the second end is electrically coupled to the output terminal OUT. Since the voltage level of the signal transmitted from the bidirectional circuit to the control circuit 41 can be an accurate high voltage V H or a low voltage V L . Therefore, the voltage level pre-stored at the control terminal of the switch SW 7 can also be an accurate high voltage V H or a low voltage V L . When the voltage level of the pulse terminal CLK is raised from the low voltage V L to the high voltage V H , the voltage level of the control terminal of the switch SW 7 is like the control voltage V C5 or the control voltage V C6 in the bidirectional circuit, and can be increased by the parasitic capacitance to Higher voltage level. Thereby, the voltage of the output terminal OUT of the shift register 4 is changed faster.
而於本發明一實施例中,請參照第5圖,其係依據本發明一實施例的雙向電路應用於移位暫存器測試電路的電路示意圖。如第5圖所示,要測試移位暫存器時,電路架構可以包括正掃控制線SCAN1 、反掃控制線SCAN2 、移位暫存器SR1 至SRN 與測試電路5,其中測試電路5的電路結構實質上就是本發明的 雙向電路1。並且,測試電路5的第一輸入端VIN1 電性耦接至移位暫存器SRN 的輸出端,測試電路5的第二輸入端VIN2 電性耦接至移位暫存器SR1 的輸出端,測試電路5的第一選擇端SEL1 電性耦接至正掃控制線SCAN1 而第二選擇端SEL2 電性耦接至反掃控制線SCAN2 。因此,當正掃控制線SCAN1 的電壓位準為高電壓且反掃控制線SCAN2 的電壓位準為低電壓時,經過一段時間後測試電路5的輸出端OUT可以正確地輸出移位暫存器SRN 的輸出端電壓位準,而當正掃控制線SCAN1 的電壓位準為低電壓且反掃控制線SCAN2 的電壓位準為高電壓時,經過一段時間後測試電路5的輸出端OUT可以正確地輸出移位暫存器SR1 的輸出端電壓位準。藉此,可以驗證移位暫存器SR1 至SRN 的訊號傳遞功能是否正常。舉例來說,若正掃控制線SCAN1 的電壓位準為高電壓且反掃控制線SCAN2 的電壓位準為低電壓時,當移位暫存器SR1 的輸入端接收了一個方波,如果過了一段時間後,測試電路5的輸出端OUT所輸出的訊號的波形(例如訊號的電壓位準以及訊號的正緣與負緣的時間差)正確,則代表移位暫存器SR1 至SRN 的訊號傳遞功能正常,否則代表移位暫存器SR1 至SRN 其中至少之一的訊號傳遞功能不正常。In an embodiment of the present invention, please refer to FIG. 5, which is a circuit diagram of a bidirectional circuit applied to a shift register test circuit according to an embodiment of the invention. As shown in FIG. 5, when the shift register is to be tested, the circuit architecture may include a positive scan control line SCAN 1 , an inverse scan control line SCAN 2 , shift register SR 1 to SR N and a test circuit 5, wherein The circuit configuration of the test circuit 5 is essentially the bidirectional circuit 1 of the present invention. The first input terminal V IN1 of the test circuit 5 is electrically coupled to the output terminal of the shift register SR N , and the second input terminal V IN2 of the test circuit 5 is electrically coupled to the shift register SR 1 . The first selection terminal SEL 1 of the test circuit 5 is electrically coupled to the positive scan control line SCAN 1 and the second selection terminal SEL 2 is electrically coupled to the flyback control line SCAN 2 . Therefore, when the voltage level of the positive scan control line SCAN 1 is a high voltage and the voltage level of the reverse scan control line SCAN 2 is a low voltage, the output terminal OUT of the test circuit 5 can correctly output the shift temporarily after a period of time. The output voltage level of the register SR N is, and when the voltage level of the positive scan control line SCAN 1 is a low voltage and the voltage level of the anti-sweep control line SCAN 2 is a high voltage, the test circuit 5 is tested after a period of time. the output terminal OUT can be correctly output voltage at the output shift register SR 1 bit quasi. Thereby, it can be verified whether the signal transfer function of the shift registers SR 1 to SR N is normal. For example, if the voltage level of the positive scan control line SCAN 1 is a high voltage and the voltage level of the reverse scan control line SCAN 2 is a low voltage, when the input terminal of the shift register SR 1 receives a square wave If, after a period of time, the waveform of the signal output by the output terminal OUT of the test circuit 5 (for example, the voltage level of the signal and the time difference between the positive edge and the negative edge of the signal) is correct, it represents the shift register SR 1 The signal transmission function to SR N is normal, otherwise the signal transmission function representing at least one of the shift registers SR 1 to SR N is abnormal.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
1‧‧‧雙向電路1‧‧‧Bidirectional circuit
IN1 、IN2 ‧‧‧輸入端IN 1 , IN 2 ‧‧‧ input
OUT‧‧‧輸出端OUT‧‧‧ output
SW1 ~SW6 ‧‧‧開關SW 1 ~SW 6 ‧‧‧Switch
SEL1 、SEL2 ‧‧‧選擇端SEL 1 , SEL 2 ‧‧‧Selection
RST‧‧‧重置端RST‧‧‧Reset
VRST ‧‧‧重置電壓V RST ‧‧‧Reset voltage
VS1 、VS2 ‧‧‧選擇訊號V S1 , V S2 ‧‧‧Selection signal
VIN1 、VIN2 ‧‧‧輸入訊號V IN1 , V IN2 ‧‧‧ input signal
VC5 、VC6 ‧‧‧控制電壓V C5 , V C6 ‧‧‧ control voltage
VOUT ‧‧‧輸出訊號V OUT ‧‧‧ output signal
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CN201410424555.9A CN104202035B (en) | 2014-06-20 | 2014-08-26 | Bidirectional selection circuit, gate driver using the bidirectional selection circuit, and test circuit |
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TWI643170B (en) * | 2016-08-18 | 2018-12-01 | 鴻海精密工業股份有限公司 | Bidirectional shift register module and display driving system thereof |
TWI612510B (en) | 2017-06-02 | 2018-01-21 | 友達光電股份有限公司 | Shift register |
CN114664225A (en) * | 2022-04-07 | 2022-06-24 | 友达光电(昆山)有限公司 | Display panel |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW514926B (en) * | 2000-05-31 | 2002-12-21 | Casio Computer Co Ltd | Shift register and electronic apparatus |
US20030227433A1 (en) * | 2002-06-10 | 2003-12-11 | Seung-Hwan Moon | Shift register, liquid crystal display device having the shift register and method of driving scan lines using the same |
TW201013695A (en) * | 2008-09-17 | 2010-04-01 | Au Optronics Corp | Shift register with embedded bidirectional scanning function |
JP2011209714A (en) * | 2010-03-12 | 2011-10-20 | Semiconductor Energy Lab Co Ltd | Display device |
TW201141064A (en) * | 2010-05-07 | 2011-11-16 | Lg Display Co Ltd | Gate shift register and display device using the same |
TW201214372A (en) * | 2010-09-21 | 2012-04-01 | Chunghwa Picture Tubes Ltd | Display device |
TW201314653A (en) * | 2011-09-23 | 2013-04-01 | Hydis Tech Co Ltd | Shift register and gate driving circuit using the same |
TW201337894A (en) * | 2012-03-15 | 2013-09-16 | Japan Display West Inc | Display device, display method, and electronic device |
TW201407595A (en) * | 2006-10-17 | 2014-02-16 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
TW201409458A (en) * | 2012-08-21 | 2014-03-01 | Samsung Display Co Ltd | Emission control driver and organic light emitting display device having the same |
TW201413731A (en) * | 2006-01-07 | 2014-04-01 | Semiconductor Energy Lab | Semiconductor device, and display device and electronic device having the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100578673C (en) * | 2006-01-26 | 2010-01-06 | 奇晶光电股份有限公司 | Signal generator and its shift register |
CN100555397C (en) * | 2006-04-05 | 2009-10-28 | 联咏科技股份有限公司 | Level converter and possess the display apparatus of this device |
JP4968681B2 (en) * | 2007-07-17 | 2012-07-04 | Nltテクノロジー株式会社 | Semiconductor circuit, display device using the same, and driving method thereof |
TWI330372B (en) * | 2008-02-14 | 2010-09-11 | Au Optronics Corp | Bidirectional controlling device for increasing resistance of elements on voltage stress |
GB2459451A (en) * | 2008-04-22 | 2009-10-28 | Sharp Kk | A scan pulse shift register for an active matrix display |
US8995158B2 (en) * | 2012-07-11 | 2015-03-31 | Infineon Technologies Dresden Gmbh | Circuit arrangement with a rectifier circuit |
-
2014
- 2014-06-20 TW TW103121408A patent/TWI500015B/en active
- 2014-08-26 CN CN201410424555.9A patent/CN104202035B/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW514926B (en) * | 2000-05-31 | 2002-12-21 | Casio Computer Co Ltd | Shift register and electronic apparatus |
US20030227433A1 (en) * | 2002-06-10 | 2003-12-11 | Seung-Hwan Moon | Shift register, liquid crystal display device having the shift register and method of driving scan lines using the same |
TW201413731A (en) * | 2006-01-07 | 2014-04-01 | Semiconductor Energy Lab | Semiconductor device, and display device and electronic device having the same |
TW201407595A (en) * | 2006-10-17 | 2014-02-16 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
TW201013695A (en) * | 2008-09-17 | 2010-04-01 | Au Optronics Corp | Shift register with embedded bidirectional scanning function |
JP2011209714A (en) * | 2010-03-12 | 2011-10-20 | Semiconductor Energy Lab Co Ltd | Display device |
TW201141064A (en) * | 2010-05-07 | 2011-11-16 | Lg Display Co Ltd | Gate shift register and display device using the same |
TW201214372A (en) * | 2010-09-21 | 2012-04-01 | Chunghwa Picture Tubes Ltd | Display device |
TW201314653A (en) * | 2011-09-23 | 2013-04-01 | Hydis Tech Co Ltd | Shift register and gate driving circuit using the same |
TW201337894A (en) * | 2012-03-15 | 2013-09-16 | Japan Display West Inc | Display device, display method, and electronic device |
TW201409458A (en) * | 2012-08-21 | 2014-03-01 | Samsung Display Co Ltd | Emission control driver and organic light emitting display device having the same |
Also Published As
Publication number | Publication date |
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TW201601135A (en) | 2016-01-01 |
CN104202035A (en) | 2014-12-10 |
CN104202035B (en) | 2017-04-12 |
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