TWI497759B - - Google Patents

Info

Publication number
TWI497759B
TWI497759B TW102132412A TW102132412A TWI497759B TW I497759 B TWI497759 B TW I497759B TW 102132412 A TW102132412 A TW 102132412A TW 102132412 A TW102132412 A TW 102132412A TW I497759 B TWI497759 B TW I497759B
Authority
TW
Taiwan
Application number
TW102132412A
Other languages
Chinese (zh)
Other versions
TW201351696A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW102132412A priority Critical patent/TW201351696A/en
Publication of TW201351696A publication Critical patent/TW201351696A/en
Application granted granted Critical
Publication of TWI497759B publication Critical patent/TWI497759B/zh

Links

TW102132412A 2011-05-31 2011-05-31 Manufacturing method of high light extraction efficiency LED TW201351696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102132412A TW201351696A (en) 2011-05-31 2011-05-31 Manufacturing method of high light extraction efficiency LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102132412A TW201351696A (en) 2011-05-31 2011-05-31 Manufacturing method of high light extraction efficiency LED

Publications (2)

Publication Number Publication Date
TW201351696A TW201351696A (en) 2013-12-16
TWI497759B true TWI497759B (en) 2015-08-21

Family

ID=50158150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102132412A TW201351696A (en) 2011-05-31 2011-05-31 Manufacturing method of high light extraction efficiency LED

Country Status (1)

Country Link
TW (1) TW201351696A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200307374A (en) * 2003-07-02 2003-12-01 Formosa Epitaxy Inc Light-emitting diode structure and manufacturing method thereof
US6821804B2 (en) * 1999-12-03 2004-11-23 Cree, Inc. Enhanced light extraction in LEDs through the use of internal and external optical elements
US7037738B2 (en) * 2002-01-18 2006-05-02 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light-emitting element
TW200926449A (en) * 2007-12-14 2009-06-16 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
TW201007998A (en) * 2008-08-01 2010-02-16 Siltron Inc Semiconductor device, light emitting device and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821804B2 (en) * 1999-12-03 2004-11-23 Cree, Inc. Enhanced light extraction in LEDs through the use of internal and external optical elements
US7037738B2 (en) * 2002-01-18 2006-05-02 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light-emitting element
TW200307374A (en) * 2003-07-02 2003-12-01 Formosa Epitaxy Inc Light-emitting diode structure and manufacturing method thereof
TW200926449A (en) * 2007-12-14 2009-06-16 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
TW201007998A (en) * 2008-08-01 2010-02-16 Siltron Inc Semiconductor device, light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
TW201351696A (en) 2013-12-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees