TWI495012B - - Google Patents

Info

Publication number
TWI495012B
TWI495012B TW102139821A TW102139821A TWI495012B TW I495012 B TWI495012 B TW I495012B TW 102139821 A TW102139821 A TW 102139821A TW 102139821 A TW102139821 A TW 102139821A TW I495012 B TWI495012 B TW I495012B
Authority
TW
Taiwan
Application number
TW102139821A
Other languages
Chinese (zh)
Other versions
TW201419417A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201419417A publication Critical patent/TW201419417A/en
Application granted granted Critical
Publication of TWI495012B publication Critical patent/TWI495012B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31144Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW102139821A 2012-11-12 2013-11-01 Method for enhancing etch selectivity of low dielectric material to TiN hard mask TW201419417A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210449657.7A CN103811409B (en) 2012-11-12 2012-11-12 A kind of dielectric materials that strengthens is to the hard mask etching of TiN optionally method

Publications (2)

Publication Number Publication Date
TW201419417A TW201419417A (en) 2014-05-16
TWI495012B true TWI495012B (en) 2015-08-01

Family

ID=50707993

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102139821A TW201419417A (en) 2012-11-12 2013-11-01 Method for enhancing etch selectivity of low dielectric material to TiN hard mask

Country Status (2)

Country Link
CN (1) CN103811409B (en)
TW (1) TW201419417A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107785247A (en) * 2016-08-24 2018-03-09 中芯国际集成电路制造(上海)有限公司 The manufacture method of metal gates and semiconductor devices
CN110211920A (en) * 2018-02-28 2019-09-06 中芯国际集成电路制造(上海)有限公司 The forming method of semiconductor devices
CN110459468A (en) * 2019-08-29 2019-11-15 上海华力集成电路制造有限公司 The lithographic method of TiAlN thin film
CN111029299A (en) * 2019-12-18 2020-04-17 华虹半导体(无锡)有限公司 Method for forming metal interconnection structure
CN112382607B (en) * 2020-10-28 2023-08-11 上海华力集成电路制造有限公司 Method for manufacturing metal groove in copper process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323169B1 (en) * 1999-03-08 2001-11-27 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US20050244988A1 (en) * 2003-04-15 2005-11-03 Wensheng Wang Method for fabricating semiconductor device
US20070254476A1 (en) * 2006-04-28 2007-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning porous low-k material in the formation of an interconnect structure
US20100055897A1 (en) * 2008-09-03 2010-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309448B2 (en) * 2003-08-08 2007-12-18 Applied Materials, Inc. Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323169B1 (en) * 1999-03-08 2001-11-27 Mitsubishi Gas Chemical Company, Inc. Resist stripping composition and process for stripping resist
US20050244988A1 (en) * 2003-04-15 2005-11-03 Wensheng Wang Method for fabricating semiconductor device
US20070254476A1 (en) * 2006-04-28 2007-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning porous low-k material in the formation of an interconnect structure
US20100055897A1 (en) * 2008-09-03 2010-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process

Also Published As

Publication number Publication date
TW201419417A (en) 2014-05-16
CN103811409B (en) 2016-04-20
CN103811409A (en) 2014-05-21

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