TWI495012B - - Google Patents
Info
- Publication number
- TWI495012B TWI495012B TW102139821A TW102139821A TWI495012B TW I495012 B TWI495012 B TW I495012B TW 102139821 A TW102139821 A TW 102139821A TW 102139821 A TW102139821 A TW 102139821A TW I495012 B TWI495012 B TW I495012B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210449657.7A CN103811409B (en) | 2012-11-12 | 2012-11-12 | A kind of dielectric materials that strengthens is to the hard mask etching of TiN optionally method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201419417A TW201419417A (en) | 2014-05-16 |
TWI495012B true TWI495012B (en) | 2015-08-01 |
Family
ID=50707993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102139821A TW201419417A (en) | 2012-11-12 | 2013-11-01 | Method for enhancing etch selectivity of low dielectric material to TiN hard mask |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103811409B (en) |
TW (1) | TW201419417A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107785247A (en) * | 2016-08-24 | 2018-03-09 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of metal gates and semiconductor devices |
CN110211920A (en) * | 2018-02-28 | 2019-09-06 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor devices |
CN110459468A (en) * | 2019-08-29 | 2019-11-15 | 上海华力集成电路制造有限公司 | The lithographic method of TiAlN thin film |
CN111029299A (en) * | 2019-12-18 | 2020-04-17 | 华虹半导体(无锡)有限公司 | Method for forming metal interconnection structure |
CN112382607B (en) * | 2020-10-28 | 2023-08-11 | 上海华力集成电路制造有限公司 | Method for manufacturing metal groove in copper process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323169B1 (en) * | 1999-03-08 | 2001-11-27 | Mitsubishi Gas Chemical Company, Inc. | Resist stripping composition and process for stripping resist |
US20050244988A1 (en) * | 2003-04-15 | 2005-11-03 | Wensheng Wang | Method for fabricating semiconductor device |
US20070254476A1 (en) * | 2006-04-28 | 2007-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning porous low-k material in the formation of an interconnect structure |
US20100055897A1 (en) * | 2008-09-03 | 2010-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7309448B2 (en) * | 2003-08-08 | 2007-12-18 | Applied Materials, Inc. | Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material |
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2012
- 2012-11-12 CN CN201210449657.7A patent/CN103811409B/en active Active
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2013
- 2013-11-01 TW TW102139821A patent/TW201419417A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6323169B1 (en) * | 1999-03-08 | 2001-11-27 | Mitsubishi Gas Chemical Company, Inc. | Resist stripping composition and process for stripping resist |
US20050244988A1 (en) * | 2003-04-15 | 2005-11-03 | Wensheng Wang | Method for fabricating semiconductor device |
US20070254476A1 (en) * | 2006-04-28 | 2007-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning porous low-k material in the formation of an interconnect structure |
US20100055897A1 (en) * | 2008-09-03 | 2010-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process |
Also Published As
Publication number | Publication date |
---|---|
TW201419417A (en) | 2014-05-16 |
CN103811409B (en) | 2016-04-20 |
CN103811409A (en) | 2014-05-21 |