TWI488986B - Non-contact process kit - Google Patents

Non-contact process kit Download PDF

Info

Publication number
TWI488986B
TWI488986B TW096148309A TW96148309A TWI488986B TW I488986 B TWI488986 B TW I488986B TW 096148309 A TW096148309 A TW 096148309A TW 96148309 A TW96148309 A TW 96148309A TW I488986 B TWI488986 B TW I488986B
Authority
TW
Taiwan
Prior art keywords
process kit
ring
body
wall
upper surface
Prior art date
Application number
TW096148309A
Other languages
Chinese (zh)
Other versions
TW200835801A (en
Inventor
Karl Brown
Puneet Bajaj
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US87075206P priority Critical
Priority to US91678407P priority
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200835801A publication Critical patent/TW200835801A/en
Application granted granted Critical
Publication of TWI488986B publication Critical patent/TWI488986B/en

Links

Description

Non-contact process kit

The present invention generally relates to a process kit for a semiconductor process chamber and a semiconductor process chamber having a process kit. More specifically, the present invention relates to a process kit comprising a ring and a shield suitable for use in a physical vapor deposition process chamber.

Physical vapor deposition (PVD) or sputtering is one of the common processes for manufacturing electronic components. Physical vapor deposition is a plasma process performed in a vacuum processing chamber in which a negatively biased target in a vacuum processing chamber is exposed to a heavy atom (eg, argon (Ar) or contains such an inert gas). Gas mixture) The voltage of the inert gas. After the inert gas ions bombard the target, the target material atoms are shot. The atom that is ejected accumulates as a deposited film on the substrate on the substrate support in the processing chamber.

The process component can be placed in the processing chamber to define a process area in a desired area of the processing chamber relative to one of the substrates. The process kit generally includes a cover ring, a deposition ring, and a ground shield. Limiting the plasma and the emitted atoms in the process area helps maintain other components in the process chamber from the deposition material and more efficiently utilizes the target material to deposit a higher proportion of shot atoms on the substrate. On the material. The cover ring also prevents deposition around the substrate support. The cover ring also assists in controlling deposition at or below the edge of the substrate.

Although the traditional ring and shield design has a solid process history, The reduction in critical dimensions has made the treatment room's pollution highly valued. Due to the rise and fall of the substrate support between the transport and processing positions, the ring and the shield are periodically in contact with one another, making conventional designs a potential source of specific contamination.

In addition, since conventional shadow ring designs are typically not connected to a temperature control source (eg, a process chamber wall or substrate support), the temperature of the shadow ring may vary during the process cycle. Heating and cooling the shadow ring increases the stress in the deposited material on the shadow ring, causing the stressed material to peel off and form particles. Therefore, the inventor of the present invention believes that it would be very helpful if the process kit can reduce the contamination of the process chamber.

Therefore, there is still a need in the industry for improved process sets.

The present invention generally provides a process kit for a physical vapor deposition (PVD) process chamber, and a physical vapor deposition process chamber having an interleaving process kit. In one embodiment, a process kit includes an interleaving deposition ring and a ground shield. The deposition ring is configured to have a large pedestal contact surface and a plurality of substrate support buttons. The interleaved deposition ring and the grounding shield are preferably placed in contact with the substrate support base and the processing chamber wall after being placed in the physical vapor deposition processing chamber to promote a good and predictable control temperature, thereby depositing the film thereon. Process contamination is minimized. In addition, the interleaved deposition ring and the grounding shield are preferably disposed so as not to be in contact with each other during use in the physical vapor deposition processing chamber, thereby eliminating potential contamination of the particles generated in the conventional design.

In one embodiment, the process kit of the present invention generally includes a real a cylindrical shield of the flat cylindrical body, at least one elongated cylindrical ring extending downwardly from the body, and a mounting portion extending upward from an upper surface of the body.

In another embodiment, a process kit includes a substantially cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one U-shaped channel extending downwardly coupled to an outer portion of the body, an inner wall extending upward from an upper surface of the inner region of the body, and a The substrate supporting the protrusions with the inner wall extending radially inward.

In yet another embodiment, a physical vapor deposition processing chamber is provided that includes an interleaved ground shield and a deposition ring that are configured to be in contact with each other during use of the physical vapor deposition processing chamber.

The present invention generally provides a process kit for a physical vapor deposition (PVD) processing chamber. The process kit is preferred in that it is less prone to specific contamination, thereby promoting process uniformity and reproducibility and the life cycle of longer process components.

FIG. 1 illustrates an exemplary semiconductor process chamber 150 having an embodiment of a process kit 114. The process kit 114 includes an interleaved deposition ring 102 and a ground shield 162. One can benefit from the process of the present invention is a sample processing chamber IMP Applied Materials, Inc. of Santa Clara, California provided by VECTRA TM PVD process chamber process. It should be understood that other process chambers provided by other manufacturers may also benefit from the present invention.

The exemplary process chamber 150 includes a process chamber body 152. It has a bottom 154, a cover assembly 156 and a plurality of side walls 158 to define an evacuatable internal volume 160. The process chamber body 150 is generally fabricated from a stainless steel welded plate or a unitary aluminum block. The side walls 158 generally include a sealable access port (not shown) to provide the substrate 104 from the inlet and outlet of the process chamber 150. A suction weir 122 disposed in the side walls 158 is coupled to the suction system 120 to evacuate and control the pressure of the internal volume 160. The lid assembly 156 of the processing chamber 150 generally supports the annular shield 152 that intersperses with the deposition ring 102 to define a plasma formed in the interior volume 160 in a region above the substrate 104.

The base assembly 100 is supported by the bottom 154 of the process chamber 150. The susceptor assembly 100 can support the deposition ring 102 and the substrate 104 during processing. The base assembly 100 is coupled to the bottom 154 of the processing chamber 150 by a lift mechanism 118 that is configured to move the base assembly 100 between an upper position (as shown) and a lower position . At the upper position, the deposition ring 102 is interposed with the shield 162 in a spaced relationship. In the lower position, the deposition ring 102 is separated from the shield 162 to allow the substrate 104 to be removed from the processing chamber 150 through the access ring provided by the deposition ring 102 and the sidewall 158 between the shields 162. In addition, at the lower position, the lift pins (shown in FIG. 2) are moved via the base assembly 100 to separate the substrate 104 from the base assembly 100 for transfer using the wafer disposed outside the process chamber 150. A mechanism (such as a single-leaf robotic arm, not shown) exchanges the substrate 104. The snake abdomen 186 is typically disposed between the base assembly 100 and the processing chamber bottom 154 to isolate the interior volume 160 of the processing chamber body 152 from the exterior of the base assembly 100 and the exterior of the processing chamber.

The base assembly 100 generally includes a substrate support 140 that is sealingly coupled to a platform housing 108. The platform housing 108 is typically made of a metallic material such as stainless steel or aluminum. A cooling plate 124 is typically disposed within the platform housing 108 to thermally condition the substrate support 140. A susceptor assembly 100 that can be used in accordance with the present invention is described in U.S. Patent No. 5,507,499 issued to Davenport et al.

The substrate support 140 can be made of aluminum or a ceramic material. The substrate support 140 can be an electrostatic chuck, a ceramic body, a heater, or a combination thereof. In one embodiment, the substrate support 140 is an electrostatic chuck including a dielectric body 106 having a conductive layer 112 therein. The dielectric body 106 is typically fabricated from a highly thermally conductive dielectric material such as pyrolytic boron nitride, aluminum nitride, tantalum nitride, aluminum, or equivalent materials.

The cover assembly 156 generally includes a cover member 130, a target 132, a spacer 182, and a magnetron 134. The cover member 130 is supported by a plurality of side walls 158 when in the closed position, as shown in FIG. Seal 136 is placed between spacer 182 and cover member 130 and side wall 158 to prevent leakage of vacuum therebetween.

The target 132 is coupled to the cover member 130 and exposed to the outer volume 160 of the process chamber 150. The target 132 can provide material deposition on the substrate 104 during the physical vapor deposition process. The spacer 182 is disposed between the target 132, the cover member 130 and the processing chamber body 152 to electrically isolate the opening member 130 and the processing chamber body 152 from the target 132.

The target 132 and the base assembly 100 are biased relative to one another by a power source 184. A gas (such as argon) is supplied to the body by a gas source (not shown). In the 160. The plasma is formed between the substrate 104 and the target 132 by a gas. The ions within the plasma accelerate toward the target 132 and cause the material to be detached from the target 132, while the detached target material is deposited on the substrate 104.

The magnetron 134 is coupled to the cover member 130 outside the process chamber 150. The magnetron 134 includes at least one rotating magnetic component 138 to uniformly dissipate the target 132 during the physical vapor deposition process. A magnetron that can be used is described in U.S. Patent No. 5,953,827 issued to Or et al.

The hub assembly 110 couples the lid assembly 156 to the process chamber 150. The motor-mounted actuator 116 can be coupled to the hub assembly 110 and/or the cover member 130 to facilitate movement of the cover assembly 156 between open and closed positions.

2 is a partial cross-sectional view of the process kit 114 engaged with the substrate support pedestal assembly 100. Although not shown, the shield 162 of the process kit 114 is mounted at a fixed height of the process chamber body 152 relative to the lid assembly 156. The deposition ring 102 is illustrated in a raised or process position with a tortuous gap 250 defined between the deposition ring 102 and the ground shield 162 to define plasma and deposits on the substrate 104 and the target 132. Within the defined area. The deposition ring 102 and the ground shield 162 further have a blocking function to prevent the material shot by the target 132 from being inadvertently deposited on other portions of the processing chamber. As such, the deposition ring 102 and the ground shield 162 can effectively transform the target 132 into a layer of material deposited on the substrate 104.

The ground shield 162 has a substantially flat cylindrical body 202 and may be made of or coated with a conductive material such as metal. Among the metals suitable for the grounding shield 162 are stainless steel and titanium. Used as a ground shield The material of the cover 162 should be compatible with the process performed in the processing chamber. The body 202 is mounted to the process chamber body 152 such that the body 202 is substantially co-centered with the centerline of the base assembly 100. The centerline 200 of the body 202 shown in the embodiment of Figure 2 is generally vertically oriented. The position of the centerline 20 is merely illustrative and is not drawn to scale with other features in the figures.

The body 202 includes an upper surface 204, a lower surface 206, an outer wall 220, and an inner edge 224. In the embodiment illustrated in FIG. 2, the upper surface 204 and the lower surface 206 are substantially perpendicular to the centerline 200 except for the sloped surface 226 of the upper surface 204 (which is inclined downward toward the inner edge 224 of the body 202).

Inner ring 208 and outer ring 210 extend downwardly from lower surface 206. The loop portions 208, 210 are generally elongated column shapes (compared to the general shape of the body 202). In the embodiment shown in Fig. 2, the directions of the loop portions 208, 210 are generally parallel spaced. The outer diameter of the outer ring 210 can also be the same as the outer diameter of the outer wall 220.

Mounting segment 212 extends upwardly from upper surface 204 along outer wall 220. The mounting section 212 includes an inner wall 214 and an inner tapered portion 216, an outer wall 222 and a mounting flange 218. The inner wall 214 extends upwardly from the upper surface generally perpendicular to the inner tapered portion. The inner tapered portion 216 extends upwardly and outwardly to provide a gap between the shield 162 and the target 130 (as shown in Figure 1). The outer wall 222 is generally larger in diameter than the outer wall 220 of the body 202.

The mounting flange 218 extends outwardly from the outer wall 222 and engages the body 152 and/or the cover assembly 156 to ensure that the shield 162 is positioned. The mounting flange 218 can include a plurality of holes and/or slots for coupling to the body 152 and/or the cover assembly 156. Due to the body 152 and/or the cover assembly 156 (with cover The shield 162) is thermally adjustable so that temperature control of the mounting flange 218 can be performed via conduction.

Portions of the ground shield 162 may be coated, textured, or otherwise surface treated. In one embodiment, the ground shield 162 is undulating on at least some surfaces. The undulations (eg, texturing) may be etched, embossed, abraded, beaded, grit blasting, ground or polished, or he may be suitable for the process. In the embodiment shown in Fig. 2, all surfaces of the ground shield 162 are subjected to bead blasting. The beaded surface of the ground shield typically has a RA surface roughness of about 250 or more micro-inch.

The deposition ring 102 has a generally flat cylindrical body 252 and may be made of a conductor or non-conductor material. In one embodiment, the deposition ring 102 is made of a ceramic material such as quartz, alumina or other suitable material.

The body 252 generally includes an outer portion 274, an inner portion 276, a lower surface 256, and an upper surface 254. The upper surface 254 includes a recess 258 that receives the lip 228 of the shield 162 when the shield 162 and the deposition ring 102 are positioned adjacent one another. The lower surface 256 is configured to be disposed on a projection 240 formed at the periphery of the base assembly 100. The lower surface 256 can be flat and/or have a smooth surface finish to provide good thermal contact with the protrusions 240. The relatively large contact area between the lower surface 256 and the projection 240 (as compared to conventional designs) and the relatively thin link area of the body 252 provide for good heat transfer between the ring 102 and the base assembly 100. For its part, the temperature of the ring portion 102 can be easily maintained at a fixed temperature via heat transfer with the base assembly 100.

In an embodiment, one or more temperature control members 246 can be disposed on the base The protrusions 240 in the assembly 100 are directly below to enhance the temperature control of the ring portion 102 without being affected by the features of the base assembly 100 (to control the temperature of the substrate 104). The temperature control members 246 can include one or more conduits for flowing a heat transfer fluid therebetween, an electrical resistance heater, and the like. The output of temperature control 246 is controlled by one or more suitable temperature control sources 248, such as a power source, a heat transfer fluid supply, and the like.

Inner wall 260 extends upwardly from interior 276 to substrate support flange 262. The inner wall 260 has an inner diameter that is selected to maintain a gap between the wall 260 and a stepped portion 242 that couples the projection 240 to the top surface of the base assembly 100. The height of the inner wall 260 is selected to maintain a gap between the flange 262 of the ring portion 102 and the top surface 244 of the base assembly 100.

The substrate support flange 262 extends inwardly from the upper end of the inner wall 260 and covers the outer edge of the top surface 244 of the base assembly 100. In one embodiment, the flange 262 is substantially perpendicular to the inner wall 260 and parallels the lower surface 256 and the upper surface 254. The flange 262 includes a plurality of substrate support buttons 264 to support the substrate 104 at a distance above the upper surface of the flange 262. The button portion 264 can be circular, cylindrical, truncated conical, or other suitable shape. The button portion 264 minimizes contact between the substrate 104 and the ring portion 102. The minimum contact between the button portion 264 and the substrate 104 reduces the number of particles that may be formed while minimizing heat transfer between the ring portion 102 and the substrate 104. In one embodiment, the three button portions 264 are symmetrically disposed in a polar array and are at a height of about 1 mm.

A U-shaped channel 266 that faces upward is generally formed at the exterior 274 of the body 252. The U-shaped channel 266 has an inner foot 2686 that borrows a bottom 270 It is coupled to an outer foot 272. The inner foot portion 268 extends downwardly from the lower surface 256 of the body 252 and has an inner diameter selected to maintain a gap between the base assembly 100 and the ring portion 102.

The feet 268, 272 are generally elongated cylindrical (compared to the body 252 of the ring portion 102). In the embodiment illustrated in FIG. 2, the feet 268, 272 are generally parallel spaced and configured to interpose with the inner ring 208 of the ground shield 162.

The spaces between the feet 268, 272 and the inner ring 208 may define an outer region of the tortuous gap 250. The inner region of the meandering gap 250 is defined between the lip 228 of the shield member 162 and the wall surface 260 of the deposition ring 102 and the recess 258. The spacing between the lip 228 and the deposition ring 102 can be selected to promote or reduce deposition of the substrate 104 on the side of the base assembly 100.

Since the entrance to the inner region of the tortuous gap 250 is partially covered by the substrate 204 and faces away from the track of the sputter target material in the inner volume 160, it is unlikely to be within the tortuous gap 250 as compared to conventional designs. Formed and become a bridging deposit, thus extending the service life between process sets 114 for several cleanings. In addition, since the deposition ring 102 of the process kit 114 and the ground shield 162 are not in contact, the possibility of particle contamination can be eliminated. Moreover, since the deposition ring 102 and the ground shield 162 of the process kit 114 have good thermal contact with their support structures (such as the base assembly 100 and the process chamber body 152/cover assembly 156), the thermal control of the package 114 can be enhanced. . Intensified thermal control can stress control the film deposited on the set 114, so there will be less particle formation than conventional designs.

3 is another embodiment of a process kit 300 and a substrate support base 100-joined cross-section. The process kit 300 generally includes a deposition ring 302 and a ground shield 304 interposed to form a meandering gap 350.

The ground shield 304 is substantially similar to the aforementioned ground shield. In the embodiment illustrated in FIG. 3, the shield member 304 includes a cylindrical body 306 having an upper surface 308, a lower surface 310, an inner edge 312, and an outer wall 314. The upper surface 308 includes a ramp 316. The lower surface 310 of the body 306 includes an inner ring 208 and an outer ring 210. In an embodiment, the inner edge 312 generally slopes the ramp 316 obliquely.

The deposition ring 302 is substantially similar to the deposition ring described above, but a trap 352 is formed on the upper surface 254 of the ring portion 302. The complement portion 352 is defined between the complement portion wall surface 360 and the ring portion 302 upper surface 254.

The complement wall 360 includes a ring portion 354 that extends upwardly from the upper surface 254 of the ring portion 302 to the lip portion 356. The lip 356 extends inwardly and downwardly to the junction of the inner wall 260 and the upper wall 254. The end of the lip 356 is substantially closer to the upper surface 254 than the lip 356 adjacent the ring portion 354 such that the upper top of the complement 352 is taller than the end of the lip 356. Such a geometric relationship facilitates the replenishment of the deposited material without agglomerating the deposit, thus avoiding bridging of the gap between the lip 356 and the substrate 104.

In one embodiment, the upper surface of the ring portion 354 includes an inner inclined wall 264 and an outer inclined wall 262 that are joined at a vertex 266. The inner inclined wall 264 extends downwardly from the apex 366 to the lip 356. The outer slanted wall 262 extends downwardly from the apex 366 to the outer complement wall 368. The outer rim 262 of the deposition ring 302 and the inner edge 312 of the shield 304 define an entrance from the process region of the inner volume 160 to the meandering gap 350.

The process kit 300 of FIG. 3 separates the plasma isolation feature from the edge deposits controlled via the complement 352 by the tortuous gap 350. Moreover, when the distance between the inner and outer diameters of the shield 304 is substantially reduced, the manufacturing cost can be reduced in this embodiment without substantially increasing the material required to assemble the matching deposition ring 302.

4 is a cross-sectional view of another embodiment of the process kit 400 joined to the substrate support pedestal 100. The process kit 400 generally includes a deposition ring 402 and a ground shield 404 that are interleaved to form a meandering gap 450.

The ground shield 404 is substantially similar to the ground shield described in Figures 1-2 above. In the embodiment shown in FIG. 4, the shield member 404 includes a flat cylindrical body 406 having an upper surface 408, a lower surface 410, an inner edge 412 and an outer wall 414. The upper surface 408 includes a ramp 416. The lower surface 410 of the body 406 has a cylindrical ring 418.

The cylindrical ring 418 extends downwardly and outwardly and interspersed with the deposition ring 402. In the embodiment illustrated in FIG. 4, the ring 418 is oriented from about 5 to about 35 degrees with respect to the centerline of the shield 404.

The deposition ring 402 is substantially similar to the aforementioned deposition ring, but with a slanted U-shaped channel 420. The U-shaped channel 420 includes an inner foot 422 coupled to an outer foot 424 by a bottom portion 426. The feet 422, 424 are oriented with respect to the centerline of the ring 402 in an orientation of from about 5 to about 35 degrees. In the embodiment shown in FIG. 4, the legs 422, 424 are oriented in the same orientation as the cylindrical ring 418 of the shield 404.

The outer diameter of the distal end of the outer foot 424 is generally selected to not obscure the end of the ring 418 such that the shield 404 and the deposition ring 402 can be in the base assembly The 100 drops can be separated when the substrate is exchanged without hindering each other. When the base assembly 100 is raised to the process position shown in FIG. 4, the feet 422, 424 and the ring portion 418 can define an outer portion of the meandering gap 450.

Alternatively, an extension 430 (shown in phantom) is formed at the end of the outer foot 424. The extension 430 can extend and increase the additional transition of the tortuous gap 450. The extension 430 includes a flange 432 that extends outwardly from the end of the outer portion 424 to the end ring 434. The end ring 434 has an inner diameter that is selected to close around the outer wall 414 of the shield 404 when the base assembly 100 is in the illustrated lift position.

The process kit 400 of Fig. 4 is economical and has many advantages over the conventional design described above.

Figure 5 is a cross-sectional view of another embodiment of the process kit 500 coupled to the substrate support pedestal 100. The process kit 500 generally includes a deposition ring 502 and a ground shield 504 interposed to form a meandering gap 550.

The ground shield 504 is substantially similar to the ground shield described in Figures 3-4 above. In the embodiment shown in FIG. 5, the shield member 504 includes a cylindrical body 506 having an upper surface 308, a lower surface 310, an inner edge 312, and an outer wall 314. The outer wall 308 includes a ramp 316. The lower surface 310 of the body 306 includes a cylindrical ring 418. The cylindrical ring 418 extends downwardly and outwardly and interspersed with the deposition ring 502.

The interior of the deposition ring 502 is substantially similar to the deposition ring 302 of Figure 3 above. The ring 502 includes a complementary portion 352 formed on an upper surface 254 of the ring 502. The complement portion 352 is defined between the complementary portion wall surface 360 and the upper surface 254. The complement wall 360 includes a ring portion 354, a lip portion 356, and a plurality of intersections Will slant walls 262, 264 at a vertex 366.

The exterior of the deposition ring 502 is substantially similar to the deposition ring 402 described above in FIG. The ring 502 includes a sloped U-shaped channel 420. The U-shaped channel 420 includes an inner foot 422 coupled to an outer foot 424 by a bottom portion 426. The feet 422, 424 are configured to interpose with the cylindrical ring 418 of the shield 504 as previously described.

6 is a cross-sectional view of another embodiment of the process kit 600 joined to the substrate support pedestal 100. The process kit 600 generally includes a deposition ring 620 and a ground shield 662 that are interleaved to form a meandering gap 650. The deposition ring 620 and the shield 622 are substantially similar to the deposition ring 102 and the ground shield 162, and for the sake of brevity, similar features are designated by the same reference numerals and are not described.

In the embodiment shown in FIG. 6, the inner wall 260 of the deposition ring 620 has a substrate support end 622. The substrate support end 622 does not extend radially into the inner wall 260. The substrate support end 622 has a substrate seating surface configured to support the substrate 104 above the surface 244 of the base assembly 100, and in one embodiment, it is substantially flat and perpendicular to the centerline of the ring 620 . In one embodiment, the inner wall 260 has a height of about 0.45 inches. The intersection of the inner wall 260 and the lower surface 256 of the deposition ring flange 262 can be chamfered, such as at a 45 degree angle, to provide additional space for the base assembly 100.

In the embodiment illustrated in Figure 6, the deposition ring 620 can also be textured on its upper surface as indicated by the dashed line 624. The textured surface provides better adhesion of the deposited material on the ring portion 620, such that the deposited material particles or exfoliation are not easily separated from the ring portion 620 and become a process fouling of the process. Dyed matter. The aforementioned adhered deposition material can be removed from the ring portion 620 using an in-situ and/or ex situ cleaning process. In one embodiment, the ring can be textured as previously described.

The ground shield 662 includes a mounting section 212 having a stepped portion 606 on the upper outer diameter 604. The step 606 can couple the outer diameter 604 to a substantially horizontal upper surface 602. A transition radius 608 can connect the outer shield 662 and the outer outer wall 604.

A lip 610 extends downwardly from the upper outer wall 604 and beyond the transition radius 608, as shown in FIG. The lip 610 can provide a reduced contact area between the process chamber and the ground shield 662.

The inner surface of the ground shield 662 can also be textured as shown by dashed line 654. As previously mentioned, the textured surface of the ground shield provides a more adherent material to the deposition material that will not become a process contaminant afterwards.

The lip 228 of the ground shield 662 can also include a recess 612 formed at the transition between the lip 228 and the lower surface 206 of the shield body 202. The recess 612 can provide additional space between the shield 662 and the ring portion 620 to accommodate a substantial amount of material deposited in the recess 258 of the ring portion 620.

As with the process kits described above, the process kit 600 of FIG. 6 is more economical to manufacture and has many advantages over the conventional design described above.

Therefore, the foregoing process kit for the physical vapor deposition process chamber can effectively reduce the possible formation of particles when the ground shield of the process kit and the deposition ring are not in contact. In addition, when the process kit is shielded and The temperature of the process set can be controlled when the ring is contacted with a temperature controlled surface to reduce and/or eliminate thermal cycling stress, thereby controlling the material stress deposited on the process set. Moreover, due to the simplification of the design, the process kit of the present invention has a manufacturing cost advantage and does not require a third ring design of a conventional process kit.

While the invention has been described in connection with the preferred embodiments, the embodiments of the present invention may be made without departing from the spirit and scope of the invention.

100‧‧‧Base assembly

102‧‧‧Sedimentary ring

104‧‧‧Substrate

106‧‧‧Ontology

108‧‧‧ Cover

110‧‧‧ Hub components

112‧‧‧ Conductive layer

114‧‧‧Processing kit

116‧‧‧Actuator

118‧‧‧lifting agency

120‧‧‧sucking system

122‧‧‧Aspiration

124‧‧‧Cooling plate

130‧‧‧Cleaning pieces

132‧‧‧ Target

134‧‧‧Magnetic tube

136‧‧‧Seal

138‧‧‧ Magnetic components

140‧‧‧Substrate support

150‧‧‧Processing room

152‧‧‧ body

154‧‧‧ bottom

156‧‧‧Cover components

158‧‧‧ side wall

160‧‧‧Shield

162‧‧‧Shield

180‧‧‧Grounding shield

182‧‧‧pitch

184‧‧‧Power supply

186‧‧‧ snake belly

200‧‧‧ center line

202‧‧‧Ontology

204‧‧‧Upper surface

206‧‧‧ lower surface

208‧‧‧ Inner Ring

210‧‧‧ outer ring

212‧‧‧Installation section

214‧‧‧ inner wall

216‧‧ inside tapered part

218‧‧‧ mounting flange

220‧‧‧ outer wall

222‧‧‧ outer wall

224‧‧‧ inner edge

226‧‧‧Bevel

228‧‧‧Lip

240‧‧‧ protruding parts

242‧‧‧Steps

244‧‧‧ upper surface

246‧‧‧temperature control

248‧‧‧ Temperature Control Source

250‧‧‧ gap

252‧‧‧ Ontology

254‧‧‧ upper surface

256‧‧‧ lower surface

258‧‧‧ recess

260‧‧‧ inner wall

262‧‧‧Substrate support flange

264‧‧‧ bottom

266‧‧‧U-shaped channel

268‧‧‧Inside the foot

270‧‧‧ bottom

272‧‧‧Outer protrusion

274‧‧‧External

276‧‧‧Internal

300‧‧‧ set

302‧‧‧ Ring Department

304‧‧‧Shield

306‧‧‧ Ontology

308‧‧‧ upper surface

310‧‧‧ lower surface

312‧‧‧ inner edge

314‧‧‧ outer wall

316‧‧‧Slope

350‧‧‧Zigzag gap

352‧‧‧Complementary Department

354‧‧‧ wall

356‧‧‧Lip

360‧‧‧Replenishment wall

362‧‧‧ outer sloping wall

364‧‧‧Inside sloping wall

366‧‧‧ vertex

368‧‧‧ external complement wall

400‧‧‧ set

402‧‧‧ Ring Department

404‧‧‧Shield

406‧‧‧ Ontology

408‧‧‧ upper surface

410‧‧‧ lower surface

412‧‧‧ inner edge

414‧‧‧ outer wall

416‧‧‧Inner taper

418‧‧‧ Ring Department

420‧‧‧U-shaped channel

422‧‧‧foot

424‧‧‧ Foot

426‧‧‧ bottom

450‧‧‧Zigzag gap

500‧‧‧ set

502‧‧‧ Ring Department

504‧‧‧Shield

506‧‧‧ Ontology

550‧‧‧Zigzag gap

600‧‧‧Processing kit

602‧‧‧ upper surface

604‧‧‧Upper surface

606‧‧‧Steps

608‧‧‧Transition radius

610‧‧‧Lip

612‧‧‧ recess

620‧‧‧Sedimentary ring

622‧‧‧Substrate support end

624‧‧‧ dotted line

650‧‧‧Zigzag gap

662‧‧‧Grounding shield

The invention will be more clearly understood from the following description of the embodiments and appended claims. However, it is to be understood that the appended claims are not to be construed as limiting

1 is a schematic cross-sectional view of a semiconductor process system having a process kit embodiment; FIG. 2 is a partial cross-sectional view of the process kit interposed with the substrate support base of FIG. 1; A partial cross-sectional view of another embodiment of a process kit interleaved with a substrate support pedestal; FIG. 4 is a partial cross-sectional view of another embodiment of a process kit interposed with a substrate support pedestal; a partial cross-sectional view of another embodiment of a process kit interfacing with a substrate support pedestal; Figure 6 is a partial cross-sectional view of another embodiment of a process kit interleaved with a substrate support pedestal.

For the sake of understanding, the same components are denoted by the same reference numerals as much as possible. It is to be understood that the elements disclosed in the embodiments are also applicable to other embodiments without specific description.

100‧‧‧Base assembly

104‧‧‧Substrate

160‧‧‧Shield

200‧‧‧ center line

202‧‧‧Ontology

204‧‧‧Upper surface

206‧‧‧ lower surface

208‧‧‧ Inner Ring

210‧‧‧ outer ring

212‧‧‧Installation section

214‧‧‧ inner wall

216‧‧ inside tapered part

220‧‧‧ outer wall

224‧‧‧ inner edge

226‧‧‧Bevel

228‧‧‧Lip

240‧‧‧ protruding parts

242‧‧‧Steps

244‧‧‧ upper surface

246‧‧‧temperature control

248‧‧‧ Temperature Control Source

252‧‧‧ Ontology

254‧‧‧ upper surface

256‧‧‧ lower surface

258‧‧‧ recess

260‧‧‧ inner wall

262‧‧‧Substrate support flange

266‧‧‧U-shaped channel

268‧‧‧Inside the foot

270‧‧‧ bottom

272‧‧‧Outer protrusion

274‧‧‧External

276‧‧‧Internal

600‧‧‧Processing kit

602‧‧‧ upper surface

604‧‧‧Upper surface

606‧‧‧Steps

608‧‧‧Transition radius

610‧‧‧Lip

612‧‧‧ recess

620‧‧‧Sedimentary ring

622‧‧‧Substrate support end

624‧‧‧ dotted line

650‧‧‧Zigzag gap

662‧‧‧Grounding shield

Claims (27)

  1. A process kit includes: a substantially cylindrical shield member comprising: a substantially flat cylindrical body having an upper surface that tapers downward toward an inner end; at least one elongated cylindrical ring, Extending downwardly from the body; and a mounting section extending upwardly from the upper surface of the body by an outer wall of the body, the mounting section having a mounting flange extending radially outward beyond the outer wall of the body, An inner wall extending from the upper surface of the body, an inner taper radially outwardly and upwardly flared from the inner wall, and an outer diameter of the mounting flange Extend one of the lips.
  2. The process kit of claim 1, wherein the system is made of at least one of stainless steel or titanium.
  3. The process kit of claim 1, wherein the system is made of or coated with a conductor material.
  4. The process kit of claim 1, wherein at least a portion of the body is surface treated.
  5. The process kit of claim 1, wherein the body is At least a portion has a beaded surface.
  6. The process kit of claim 1, wherein the at least one elongated cylindrical ring faces a vertical direction with respect to a centerline of the body.
  7. The process kit of claim 1, wherein the at least one elongated cylindrical ring faces in a direction from about 5 to about 35 degrees with respect to a centerline of the body.
  8. The process kit of claim 1, wherein the at least one elongated cylindrical ring further comprises: an inner ring; and an outer ring spaced apart from the inner ring by a substantially parallel relationship.
  9. The process kit of claim 1, wherein the inner edge of the body shortens the slope, and wherein the inner edge is substantially parallel to a centerline of the body.
  10. The process kit of claim 1, further comprising: a substantially cylindrical deposition ring, comprising: a substantially flat cylindrical body having an upper surface and a lower surface, the lower surface being configured to be Supported on one of the substrate support bases a ledge; at least one downwardly extending U-shaped channel coupled to one of the exterior of the body; and an inner wall extending upwardly from the upper surface of the inner region of the body and having a substrate support surface a substrate supporting protrusion extending radially inward from the inner wall.
  11. The process kit of claim 10, wherein the deposition ring further comprises: a protrusion extending radially inward from the inner wall; and a plurality of button portions disposed on one of the protrusions The substrate support surface is defined on the surface.
  12. The process kit of claim 11, wherein the plurality of button portions further comprise: three button portions disposed at equal intervals in a polar array manner.
  13. The process kit of claim 10, wherein the U-shaped channel is configured to interleave with the at least one ring of the shield.
  14. The process kit of claim 10, wherein the U shape The channel further includes at least: a first foot coupled to the body of the deposition ring; a second foot spaced outwardly from the first foot; and a bottom engaging the feet.
  15. The process kit of claim 14, wherein the feet are substantially parallel to a centerline of the deposition ring.
  16. The process kit of claim 14, wherein the feet are oriented in a direction from about 5 to about 35 degrees with respect to a centerline of the deposition ring.
  17. The process kit of claim 10, wherein the body of the deposition ring further comprises: a trap wall, extending upward from the upper surface of the deposition ring; and a lip portion, The wall of the complement portion faces inwardly and downwardly to protrude above one of the upper surfaces of the deposition ring.
  18. The process kit of claim 17, wherein the upper surface of the wall of the complement portion further comprises: an inner inclined wall intersecting an outer oblique wall at an apex.
  19. A process kit includes: a substantially cylindrical deposition ring comprising: a substantially flat cylindrical body having an upper surface and a lower surface configured to be supported by a substrate support base At least one downwardly extending U-shaped channel coupled to an exterior of one of the bodies; and an inner wall extending upwardly from the upper surface of an interior region of the body and having a substrate support surface.
  20. The process kit of claim 19, wherein the deposition ring further comprises: a protrusion extending radially inward from the inner wall; and a plurality of button portions disposed on one of the protrusions The substrate support surface is defined on the surface.
  21. The process kit of claim 20, wherein the plurality of button portions further comprise: three button portions arranged at equal intervals in a polar array manner.
  22. The process kit of claim 19, wherein the U-shaped channel is face up.
  23. The process kit of claim 19, wherein the U-shaped channel further comprises: a first foot coupled to the body of the deposition ring; a second foot, outwardly and the first The feet are separated; and a bottom is joined to the feet.
  24. The process kit of claim 23, wherein the feet are substantially parallel to a centerline of the deposition ring.
  25. The process kit of claim 23, wherein the system is made of at least one of stainless steel or titanium.
  26. The process kit of claim 19, wherein the body of the deposition ring further comprises: a complement wall surface extending upward from the upper surface of the deposition ring; and a lip portion by the complement The wall extends inwardly and downwardly to protrude above one of the upper surfaces of the deposition ring.
  27. The process kit of claim 26, wherein an upper surface of the wall of the complement portion further comprises: an inner inclined wall intersecting an outer oblique wall at an apex.
TW096148309A 2006-12-19 2007-12-17 Non-contact process kit TWI488986B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US87075206P true 2006-12-19 2006-12-19
US91678407P true 2007-05-08 2007-05-08

Publications (2)

Publication Number Publication Date
TW200835801A TW200835801A (en) 2008-09-01
TWI488986B true TWI488986B (en) 2015-06-21

Family

ID=44819783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148309A TWI488986B (en) 2006-12-19 2007-12-17 Non-contact process kit

Country Status (1)

Country Link
TW (1) TWI488986B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6709556B2 (en) * 2002-02-14 2004-03-23 Trikon Technologies Limited Plasma processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US6709556B2 (en) * 2002-02-14 2004-03-23 Trikon Technologies Limited Plasma processing apparatus

Also Published As

Publication number Publication date
TW200835801A (en) 2008-09-01

Similar Documents

Publication Publication Date Title
JP2019517141A (en) System and method for improved semiconductor etching and component protection
KR101394085B1 (en) Process kit and target for substrate processing chamber
JP2019517139A (en) System and method for improved semiconductor etching and component protection
US8500952B2 (en) Plasma confinement rings having reduced polymer deposition characteristics
US8062717B2 (en) RF current return path for a large area substrate plasma reactor
US5518593A (en) Shield configuration for vacuum chamber
US7697260B2 (en) Detachable electrostatic chuck
JP4729160B2 (en) Device to prevent edge accumulation
KR100731557B1 (en) Semiconductor processing equipment having tiled ceramic liner
KR100794507B1 (en) Heater for processing chamber
JP3166974U (en) Edge ring assembly for plasma etching chamber
US5891251A (en) CVD reactor having heated process chamber within isolation chamber
US6081414A (en) Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JP4685994B2 (en) Sputter chamber
KR100797424B1 (en) Semiconductor processing equipment
US6051122A (en) Deposition shield assembly for a semiconductor wafer processing system
EP0562035B1 (en) Minimization of particle generation in cvd reactors and methods
US8592712B2 (en) Mounting table structure and plasma film forming apparatus
JP5220178B2 (en) Plasma confinement ring including RF absorbing material for reducing polymer deposition
JP4233618B2 (en) An electrically floating shield in a plasma reactor.
KR20190000850A (en) Substrate supporting apparatus
KR100871020B1 (en) Process kit design for deposition chamber
US6106625A (en) Reactor useful for chemical vapor deposition of titanium nitride
KR101267466B1 (en) support ring assembly
KR101952727B1 (en) Process kit shield for improved particle reduction