TWI483429B - - Google Patents

Info

Publication number
TWI483429B
TWI483429B TW098102529A TW98102529A TWI483429B TW I483429 B TWI483429 B TW I483429B TW 098102529 A TW098102529 A TW 098102529A TW 98102529 A TW98102529 A TW 98102529A TW I483429 B TWI483429 B TW I483429B
Authority
TW
Taiwan
Application number
TW098102529A
Other languages
Chinese (zh)
Other versions
TW201029225A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW98102529A priority Critical patent/TW201029225A/en
Publication of TW201029225A publication Critical patent/TW201029225A/en
Application granted granted Critical
Publication of TWI483429B publication Critical patent/TWI483429B/zh

Links

TW98102529A 2009-01-22 2009-01-22 High-brightness light emitting diode chip TW201029225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98102529A TW201029225A (en) 2009-01-22 2009-01-22 High-brightness light emitting diode chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98102529A TW201029225A (en) 2009-01-22 2009-01-22 High-brightness light emitting diode chip

Publications (2)

Publication Number Publication Date
TW201029225A TW201029225A (en) 2010-08-01
TWI483429B true TWI483429B (en) 2015-05-01

Family

ID=44853957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98102529A TW201029225A (en) 2009-01-22 2009-01-22 High-brightness light emitting diode chip

Country Status (1)

Country Link
TW (1) TW201029225A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789768A (en) * 1997-06-23 1998-08-04 Epistar Corporation Light emitting diode having transparent conductive oxide formed on the contact layer
US20070012711A1 (en) * 2005-07-18 2007-01-18 Kutsch John H Container for consumer article

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789768A (en) * 1997-06-23 1998-08-04 Epistar Corporation Light emitting diode having transparent conductive oxide formed on the contact layer
US20070012711A1 (en) * 2005-07-18 2007-01-18 Kutsch John H Container for consumer article

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
莊基陽，"不同電流阻障層對氮化鎵發光二極體之光電特性研究" ，中央大學光電所碩士論文，2007年7月 *

Also Published As

Publication number Publication date
TW201029225A (en) 2010-08-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees