TWI470278B - Microlenses fabrication - Google Patents

Microlenses fabrication Download PDF

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TWI470278B
TWI470278B TW101100344A TW101100344A TWI470278B TW I470278 B TWI470278 B TW I470278B TW 101100344 A TW101100344 A TW 101100344A TW 101100344 A TW101100344 A TW 101100344A TW I470278 B TWI470278 B TW I470278B
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glass substrate
silver
microlens
ion exchange
silver film
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TW101100344A
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TW201329524A (en
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Wen Kuei Chuang
Mao Teng Hsu
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Of Energy Ministry Of Economic Affairs Bureau
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微透鏡結構製造方法Microlens structure manufacturing method

本發明係關於一種微透鏡結構製造方法,尤其是一種利用離子交換之微透鏡結構製造方法。The present invention relates to a method of fabricating a microlens structure, and more particularly to a method of fabricating a microlens structure using ion exchange.

光學元件除了應用於一般的機械構件外,也常整合於半導體或微電子等高科技產品。隨著電子零件製程之進步,元件微小化成了科技發展的必然趨勢,為使光學元件與電子元件能有更佳的配合,許多的微光學元件應運而生,例如複合微透鏡或微透鏡陣列(Micro lens Array)等。其中,該微透鏡陣列可在微米等級的尺寸中進行陣列式的聚焦功能,且廣泛的應用於微電子產品。而該微透鏡陣列之製造方式,習知有熱回熔法及離子交換法等技術。In addition to being applied to general mechanical components, optical components are often integrated into high-tech products such as semiconductors or microelectronics. With the advancement of electronic components, the miniaturization of components has become an inevitable trend in the development of science and technology. In order to better match optical components with electronic components, many micro-optical components have emerged, such as composite microlenses or microlens arrays. Micro lens Array) and so on. Among them, the microlens array can perform array focusing function in a micron-scale size, and is widely used in microelectronic products. As a method of manufacturing the microlens array, techniques such as a thermal remelting method and an ion exchange method are known.

該熱回熔法係微透鏡陣列最常見之製作方式,其作法係於一玻璃基板上設置數個光阻,並使用微影技術將該數光阻製成圓型陣列,再將該光阻加熱至光阻熔點,使該光阻熔化後形成該微透鏡陣列。然而,該熱回熔法針對微透鏡之形狀有控制上的困難,無法隨意控制該微透鏡之外型,更難以控制該微透鏡陣列之透鏡深度與曲率半徑。The hot remelting method is the most common manufacturing method of the microlens array, and the method is to set a plurality of photoresists on a glass substrate, and use the lithography technology to form the photoresist into a circular array, and then the photoresist The microlens array is formed by heating to a melting point of the photoresist to melt the photoresist. However, the thermal remelting method has difficulty in controlling the shape of the microlens, and it is impossible to control the shape of the microlens at will, and it is more difficult to control the lens depth and the radius of curvature of the microlens array.

該離子交換法有分成數種方式,其中一種係利用熔融鹽進行之濕式離子交換法。該熔融鹽可選擇含有Ag離子或K離子的AgNO3 或KNO3 ,再將欲進行離子交換之玻璃基板置於該熔融鹽溶液中,通過熱擴散的方式將玻璃內的Na離子與熔融鹽中的Ag離子或K離子互相交換,並在該玻璃表面形成一層折射率較高之區域。但利用熔融鹽與熱擴散的方式製造微透鏡,當遇到易受熔融鹽侵蝕之該玻璃基板時,容易造成玻璃基板表面的損傷,影響該微透鏡陣列之聚光效果。The ion exchange method is divided into several methods, one of which is a wet ion exchange method using a molten salt. The molten salt may be selected from AgNO 3 or KNO 3 containing Ag ions or K ions, and the glass substrate to be ion-exchanged is placed in the molten salt solution, and the Na ions in the glass and the molten salt are thermally diffused. The Ag ions or K ions exchange with each other and form a region of higher refractive index on the surface of the glass. However, the microlens is manufactured by means of molten salt and thermal diffusion. When the glass substrate is easily eroded by the molten salt, the surface of the glass substrate is easily damaged, which affects the concentrating effect of the microlens array.

本發明之主要目的係提供一種微透鏡結構製造方法,使該微透鏡陣列於製造過程中,可輕易控制該曲率半徑與透鏡深度。SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of fabricating a microlens structure that can be easily controlled during fabrication of the microlens array.

本發明之次要目的係提供一種微透鏡結構製造方法,可減少該微透鏡陣列於製造過程中所造成之表面損傷。A secondary object of the present invention is to provide a method of fabricating a microlens structure that reduces surface damage caused by the microlens array during the manufacturing process.

為達到前述發明目的,本發明之微透鏡結構製造方法,係包含:一前置步驟,係以電鍍方式於一玻璃基板之表面形成一銀薄膜;一光阻設置步驟,係設置至少一光阻層於該銀薄膜表面;一蝕刻步驟,係蝕刻未位於該玻璃基板及該光阻層之間的該銀薄膜;一光阻移除步驟,係移除該銀薄膜表面之光阻層;及一離子交換步驟,係建立一電場偏壓通過該銀薄膜及玻璃基板,使該銀薄膜之銀離子與該玻璃基板之鈉離子進行離子交換,以在該玻璃基板內形成一銀離子層微透鏡。In order to achieve the above object, the microlens structure manufacturing method of the present invention comprises: a pre-step, forming a silver film on the surface of a glass substrate by electroplating; and a photoresist setting step of setting at least one photoresist Laying on the surface of the silver film; an etching step of etching the silver film not between the glass substrate and the photoresist layer; and a photoresist removing step of removing the photoresist layer on the surface of the silver film; An ion exchange step is to establish an electric field bias through the silver film and the glass substrate, so that silver ions of the silver film are ion-exchanged with sodium ions of the glass substrate to form a silver ion layer microlens in the glass substrate. .

本發明之微透鏡結構製造方法,其中該離子交換步驟之作業溫度介於攝氏300~500℃。In the microlens structure manufacturing method of the present invention, the working temperature of the ion exchange step is between 300 and 500 ° C.

本發明之微透鏡結構製造方法,其中該離子交換步驟之該電場偏壓介於300~857V/mm。In the microlens structure manufacturing method of the present invention, the electric field bias of the ion exchange step is between 300 and 857 V/mm.

本發明之微透鏡結構製造方法,其中該離子交換步驟之作業時間為50至100分鐘。The microlens structure manufacturing method of the present invention, wherein the ion exchange step has a working time of 50 to 100 minutes.

本發明之微透鏡結構製造方法,其中該銀薄膜厚度範圍為2~10μm。In the microlens structure manufacturing method of the present invention, the silver film has a thickness ranging from 2 to 10 μm.

為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:The above and other objects, features and advantages of the present invention will become more <RTIgt;

請參照第1圖所示,本發明微透鏡結構製造方法係包含一前置步驟S1、一光阻設置步驟S2、一蝕刻步驟S3、一光阻移除步驟S4及一離子交換步驟S5。為使本發明之敘述能更加詳細,請參閱第2至8圖,並對照本發明之步驟流程。Referring to FIG. 1 , the microlens structure manufacturing method of the present invention comprises a pre-step S1, a photoresist setting step S2, an etching step S3, a photoresist removing step S4, and an ion exchange step S5. In order to make the description of the present invention more detailed, please refer to Figures 2 to 8 and compare the steps of the present invention.

該前置步驟S1,係以電鍍方式於一玻璃基板1之表面形成一銀薄膜2。如第2、3圖所示,在本實施例中,係選取該玻璃基板1,並在欲形成一微透鏡結構之該玻璃基板1表面,以電鍍之方式鍍上一層銀薄膜2。其中,該玻璃基板1之成份中含有鈉(Na),且該納含量較佳占整個玻璃基板之成份比例為4~9.5%。該銀薄膜2之厚度,可根據使用者欲形成之微透鏡厚度進行增減,當欲產生較厚之微透鏡時,可鍍上較厚之銀薄膜2,若欲產生較薄之微透鏡時,可鍍上較薄之銀薄膜2,其中,該銀薄膜2可利用電鍍將該銀薄膜2之厚度控制在2~10μm的範圍內。更詳言之,針對不同之應用,可能需要形成較大厚度之微透鏡結構,而利用電鍍可形成較厚之銀薄膜2,使該微透鏡具有較佳之聚焦效果。In the pre-step S1, a silver thin film 2 is formed on the surface of a glass substrate 1 by electroplating. As shown in FIGS. 2 and 3, in the present embodiment, the glass substrate 1 is selected, and a silver film 2 is plated by electroplating on the surface of the glass substrate 1 on which a microlens structure is to be formed. The composition of the glass substrate 1 contains sodium (Na), and the content of the nanometer is preferably 4 to 9.5% of the total composition of the glass substrate. The thickness of the silver film 2 can be increased or decreased according to the thickness of the microlens that the user wants to form. When a thick microlens is to be produced, a thick silver film 2 can be plated, if a thin microlens is to be produced. A thin silver film 2 can be plated, wherein the silver film 2 can be controlled to have a thickness of 2 to 10 μm by electroplating. More specifically, for different applications, it may be necessary to form a microlens structure having a larger thickness, and a thicker silver film 2 may be formed by electroplating, so that the microlens has a better focusing effect.

銀薄膜的產生可以使用電鍍的方式達成,而與一般的真空鍍膜技術相比,使用電鍍的方法具有下列優點:The production of silver film can be achieved by electroplating, and the method of electroplating has the following advantages compared to the general vacuum coating technique:

1.高鍍膜速度:用電子束蒸鍍法製做銀薄膜速率一般必須低於10nm/min。若是用電鍍銀的方式製作在5-8分鐘可以得到0.7-1.2微米的銀層,因此可節省製程時間。1. High coating speed: The rate of silver film produced by electron beam evaporation is generally lower than 10 nm/min. If the silver layer of 0.7-1.2 micron is obtained by electroplating silver in 5-8 minutes, the process time can be saved.

2.設備成本低:電鍍的機台和電子束蒸鍍的機台相比價格便宜很多。2. Low equipment cost: The electroplated machine is much cheaper than the electron beam evaporation machine.

3.製程成本低:電鍍的製程耗電量和電子束蒸鍍法相比低很多,而且電子束蒸鍍法在製作過程中浪費掉的銀也較多。3. Low process cost: The electroplating process consumes a lot less power than the electron beam evaporation method, and the electron beam evaporation method wastes more silver during the production process.

4.銀薄膜的厚度問題:用電子束蒸鍍法製做銀薄膜一般厚度不超過1μm,但是用電鍍的製程則很輕易的可以突破這個限制。4. The thickness of the silver film: The thickness of the silver film by electron beam evaporation is generally less than 1 μm, but the plating process can easily break through this limitation.

5.製程溫度低:電鍍的製程溫度約在60℃以下,而用電子束蒸鍍法製作過程中基板所承受的溫度較高,若要利用lift-off製程則低溫的製程穩定度較高。5. Low process temperature: The process temperature of electroplating is about 60 ° C or less, and the substrate is subjected to high temperature during the electron beam evaporation process. If the lift-off process is to be used, the low temperature process stability is high.

該光阻設置步驟S2,係設置至少一光阻層3於該銀薄膜2表面。如第4圖所示,該光阻層3可設置於該銀薄膜2之表面,且該設置處即為該玻璃基板1欲形成微透鏡陣列之位置,該光阻層3係用以保護該設置處之銀薄膜2,避免該設置處之銀薄膜2受到不必要之蝕刻,藉此使該銀薄膜2可順利的與該玻璃基板1進行離子交換。The photoresist setting step S2 is to provide at least one photoresist layer 3 on the surface of the silver thin film 2. As shown in FIG. 4, the photoresist layer 3 can be disposed on the surface of the silver film 2, and the arrangement is the position where the glass substrate 1 is to form a microlens array, and the photoresist layer 3 is used to protect the surface. The silver film 2 is disposed at the place where the silver film 2 at the setting is prevented from being unnecessarily etched, whereby the silver film 2 can be smoothly ion-exchanged with the glass substrate 1.

該蝕刻步驟S3,係蝕刻未位於該玻璃基板1及該光阻層3之間的銀薄膜2。如第5圖所示,由於該銀薄膜2係 用以和該玻璃基板1進行離子交換,以形成該微透鏡,故必須在完全覆蓋該銀薄膜2之玻璃基板1上,移除不必要之該銀薄膜2,使得該銀薄膜2與該玻璃基板1進行離子交換時,能僅發生於欲生成微透鏡之區域。In the etching step S3, the silver thin film 2 which is not located between the glass substrate 1 and the photoresist layer 3 is etched. As shown in Figure 5, due to the silver film 2 For ion exchange with the glass substrate 1 to form the microlens, it is necessary to remove the unnecessary silver film 2 on the glass substrate 1 completely covering the silver film 2, so that the silver film 2 and the glass When the substrate 1 is ion-exchanged, it can occur only in the region where the microlens is to be generated.

該光阻移除步驟S4,係移除該銀薄膜2表面之光阻層3。如第6圖所示,為避免該光阻層3影響該銀薄膜2與玻璃基板1進行離子交換,故在進行離子交換之前,必須先行移除該光阻層3。The photoresist removal step S4 removes the photoresist layer 3 on the surface of the silver film 2. As shown in FIG. 6, in order to prevent the photoresist layer 3 from affecting the ion exchange between the silver thin film 2 and the glass substrate 1, the photoresist layer 3 must be removed before ion exchange.

該離子交換步驟S5,係建立一電場偏壓通過該銀薄膜2及玻璃基板1,使該銀薄膜2之銀離子與該玻璃基板1之鈉離子進行離子交換,以在該玻璃基板1內形成銀離子層之一微透鏡陣列4。In the ion exchange step S5, an electric field is biased through the silver film 2 and the glass substrate 1, and silver ions of the silver film 2 are ion-exchanged with sodium ions of the glass substrate 1 to form in the glass substrate 1. One of the silver ion layers is a microlens array 4.

請參照第7及8圖所示,本發明較佳實施例係將已鍍上該銀薄膜2之玻璃基板1,置於一加熱器5中,使該玻璃基板1能於一高溫環境下進行離子交換,並利用一電源供應器6施予該電場偏壓於該玻璃基板1與該銀薄膜2。該電源供應器6之較佳設置方式係以一正電極61連接該玻璃基板1鍍有銀薄膜2之一端,再將一負電極62連接該玻璃基板1未鍍有銀薄膜2之一端,使該正電極61所產生之一高電場區位於該銀薄膜2處,該電場強度沿著該玻璃基板1中欲進行離子交換之區域,逐漸減弱至該玻璃基板1連接該負電極之一端,並在該負電極處形成一低電場區。Referring to Figures 7 and 8, in a preferred embodiment of the present invention, the glass substrate 1 on which the silver film 2 has been plated is placed in a heater 5 so that the glass substrate 1 can be subjected to a high temperature environment. The ion exchange is performed, and the electric field is biased to the glass substrate 1 and the silver thin film 2 by a power supply 6. The power supply device 6 is preferably disposed by connecting a positive electrode 61 to one end of the glass substrate 1 coated with the silver film 2, and then connecting a negative electrode 62 to the glass substrate 1 and not being plated with one end of the silver film 2. A high electric field region generated by the positive electrode 61 is located at the silver thin film 2, and the electric field intensity is gradually weakened along a region of the glass substrate 1 to be ion-exchanged, and the glass substrate 1 is connected to one end of the negative electrode, and A low electric field region is formed at the negative electrode.

當銀薄膜2處於高溫及高電場環境時,該銀薄膜2可解離出一銀離子,並藉由電場的驅動使該銀離子往玻璃基板1內遷移,再將該處之一鈉離子往該低電場處推擠,使 該鈉離子推出至低電場處之該玻璃基板1,以達到離子交換之目的,並在該玻璃基板1進行離子交換之一端,形成銀離子層之該微透鏡陣列4。When the silver film 2 is in a high temperature and high electric field environment, the silver film 2 can dissociate a silver ion and drive the silver ions into the glass substrate 1 by driving the electric field, and then one of the sodium ions is transferred thereto. Pushing at a low electric field, making The sodium ions are pushed out to the glass substrate 1 at a low electric field for the purpose of ion exchange, and the microlens array 4 of the silver ion layer is formed at one end of the ion exchange of the glass substrate 1.

其中,該加熱器5所提供之該高溫環境,在本實施例中,較佳係於攝氏300~500℃之間,該電源供應器6所提供之電場偏壓較佳係於300~857V/mm之間,且該離子交換之時間較佳為50至100分鐘。此外,由於該微透鏡陣列4之厚度與該銀薄膜2之厚度具有正相關之特性,所以可根據欲生成之該微透鏡陣列4之透鏡厚度,在電鍍時鍍上相對所需之該銀薄膜2,一但該銀薄膜2耗盡了,或是關閉該驅動電場,離子交換的製程也可隨之終止,故離子交換的總量容易受到控制,能形成較符合需求之該微透鏡陣列4;再者,當該玻璃基板1係屬易受到磷酸鹽等熔融鹽侵蝕之材質,本發明之離子交換方式不需將該玻璃基板1置於一熔融鹽裡,可避免特定材料之該玻璃基板1表面受到侵蝕,減少該透鏡本身之損傷,以提高該聚光效果。The high temperature environment provided by the heater 5 is preferably between 300 and 500 ° C in the embodiment, and the electric field bias provided by the power supply 6 is preferably between 300 and 857 V / Between mm, and the ion exchange time is preferably from 50 to 100 minutes. In addition, since the thickness of the microlens array 4 has a positive correlation with the thickness of the silver thin film 2, the relatively required silver thin film can be plated during electroplating according to the lens thickness of the microlens array 4 to be generated. 2. Once the silver film 2 is depleted or the driving electric field is turned off, the ion exchange process can also be terminated, so that the total amount of ion exchange is easily controlled, and the microlens array 4 can be formed to meet the demand. Further, when the glass substrate 1 is a material which is easily attacked by molten salt such as phosphate, the ion exchange method of the present invention does not require the glass substrate 1 to be placed in a molten salt, and the glass substrate of a specific material can be avoided. 1 The surface is eroded to reduce the damage of the lens itself to enhance the concentrating effect.

本發明之微透鏡結構製造方法,可利用該銀薄膜厚度與電場強度控制該微透鏡之形成,具有輕易控制該曲率半徑與透鏡深度形成之功效。In the microlens structure manufacturing method of the present invention, the thickness of the silver film and the electric field intensity can be used to control the formation of the microlens, and the effect of forming the radius of curvature and the depth of the lens can be easily controlled.

本發明之微透鏡結構製造方法,可避免該玻璃基板因置於熔融鹽中所造成之表面損傷,具有提高聚光效果之功效。The microlens structure manufacturing method of the invention can avoid the surface damage caused by the glass substrate being placed in the molten salt, and has the effect of improving the light collecting effect.

雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本 發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

〔本發明〕〔this invention〕

1‧‧‧玻璃基板1‧‧‧ glass substrate

2‧‧‧銀薄膜2‧‧‧Silver film

3‧‧‧光阻層3‧‧‧ photoresist layer

4‧‧‧微透鏡陣列4‧‧‧Microlens array

5‧‧‧加熱器5‧‧‧heater

6‧‧‧電源供應器6‧‧‧Power supply

61‧‧‧正電極61‧‧‧ positive electrode

62‧‧‧負電極62‧‧‧negative electrode

S1‧‧‧前置步驟S1‧‧‧Pre-steps

S2‧‧‧光阻設置步驟S2‧‧‧ photoresist setting steps

S3‧‧‧蝕刻步驟S3‧‧‧ etching step

S4‧‧‧光阻移除步驟S4‧‧‧ photoresist removal step

S5‧‧‧離子交換步驟S5‧‧‧Ion exchange step

第1圖:本發明之微透鏡結構製造方法步驟圖。Fig. 1 is a view showing the steps of a method for manufacturing a microlens structure of the present invention.

第2圖:本發明之前置步驟示意圖。Figure 2: Schematic diagram of the pre-steps of the present invention.

第3圖:本發明之前置步驟示意圖。Figure 3: Schematic diagram of the pre-steps of the present invention.

第4圖:本發明之光阻設置步驟示意圖。Figure 4 is a schematic view showing the steps of setting the photoresist of the present invention.

第5圖:本發明之蝕刻步驟示意圖。Figure 5: Schematic diagram of the etching step of the present invention.

第6圖:本發明之光阻移除步驟示意圖。Figure 6 is a schematic view showing the step of removing the photoresist of the present invention.

第7圖:本發明之離子交換步驟示意圖。Figure 7: Schematic diagram of the ion exchange step of the present invention.

第8圖:本發明之離子交換步驟示意圖。Figure 8: Schematic diagram of the ion exchange step of the present invention.

S1...前置步驟S1. . . Pre-step

S2...光阻設置步驟S2. . . Photoresist setting step

S3...蝕刻步驟S3. . . Etching step

S4...光阻移除步驟S4. . . Photoresist removal step

S5...離子交換步驟S5. . . Ion exchange step

Claims (5)

一種微透鏡結構製造方法,係包含:一前置步驟,係以電鍍方式於一玻璃基板之表面形成一銀薄膜;一光阻設置步驟,係設置至少一光阻層於該銀薄膜表面;一蝕刻步驟,係蝕刻未位於該玻璃基板及該光阻層之間的該銀薄膜;一光阻移除步驟,係移除該銀薄膜表面之光阻層;及一離子交換步驟,係建立一電場偏壓通過該銀薄膜及玻璃基板,使該銀薄膜之銀離子與該玻璃基板之鈉離子進行離子交換,以在該玻璃基板內形成一銀離子層微透鏡。A microlens structure manufacturing method comprises: a pre-step of forming a silver film on a surface of a glass substrate by electroplating; and a photoresist setting step of disposing at least one photoresist layer on the surface of the silver film; An etching step of etching the silver thin film not between the glass substrate and the photoresist layer; a photoresist removing step of removing the photoresist layer on the surface of the silver thin film; and an ion exchange step establishing a The electric field is biased through the silver film and the glass substrate, and the silver ions of the silver film are ion-exchanged with the sodium ions of the glass substrate to form a silver ion layer microlens in the glass substrate. 如申請專利範圍第1項所述之微透鏡結構製造方法,其中該離子交換步驟之作業溫度介於攝氏300~500℃。The method for manufacturing a microlens structure according to claim 1, wherein the ion exchange step has an operating temperature of 300 to 500 ° C. 如申請專利範圍第1項所述之微透鏡結構製造方法,其中該離子交換步驟之該電場偏壓介於300~857V/mm。The microlens structure manufacturing method according to claim 1, wherein the electric field bias of the ion exchange step is between 300 and 857 V/mm. 如申請專利範圍第1項所述之微透鏡結構製造方法,其中該離子交換步驟之作業時間為50至100分鐘。The microlens structure manufacturing method according to claim 1, wherein the ion exchange step has an operation time of 50 to 100 minutes. 如申請專利範圍第1項所述之微透鏡結構製造方法,其中該銀薄膜厚度範圍為2~10μm。The method for manufacturing a microlens structure according to claim 1, wherein the silver film has a thickness ranging from 2 to 10 μm.
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TW201044021A (en) * 2009-03-25 2010-12-16 Tokyo Electron Ltd Method for manufacturing microlens array and microlens array
TW201142480A (en) * 2010-01-25 2011-12-01 Nissan Chemical Ind Ltd Method for producing microlens

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CN1517723A (en) * 2003-01-27 2004-08-04 ���ǵ�����ʽ���� Method for manufacturing microlens array
TW200944859A (en) * 2008-04-29 2009-11-01 Univ Nat Taiwan Method for fabricating microlenses and process of single photomask pattern-based photolithography
TW201044021A (en) * 2009-03-25 2010-12-16 Tokyo Electron Ltd Method for manufacturing microlens array and microlens array
TW201142480A (en) * 2010-01-25 2011-12-01 Nissan Chemical Ind Ltd Method for producing microlens

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