TWI460889B - Light emitting diode package structure - Google Patents

Light emitting diode package structure Download PDF

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Publication number
TWI460889B
TWI460889B TW098135965A TW98135965A TWI460889B TW I460889 B TWI460889 B TW I460889B TW 098135965 A TW098135965 A TW 098135965A TW 98135965 A TW98135965 A TW 98135965A TW I460889 B TWI460889 B TW I460889B
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TW
Taiwan
Prior art keywords
electrode
emitting diode
light emitting
package structure
heat sink
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TW098135965A
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Chinese (zh)
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TW201115789A (en
Inventor
Sheng Jia Sheu
Chih Hung Hsu
Chung Chuan Hsieh
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Everlight Electronics Co Ltd
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Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW098135965A priority Critical patent/TWI460889B/en
Priority to JP2009284561A priority patent/JP2010153861A/en
Priority to EP09179192.1A priority patent/EP2197052A3/en
Priority to US12/637,765 priority patent/US8704264B2/en
Publication of TW201115789A publication Critical patent/TW201115789A/en
Application granted granted Critical
Publication of TWI460889B publication Critical patent/TWI460889B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch

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  • Led Device Packages (AREA)

Description

發光二極體封裝結構Light emitting diode package structure

本發明是有關於一種封裝結構，且特別是有關於一種發光二極體封裝結構。The present invention relates to a package structure, and more particularly to a light emitting diode package structure.

發光二極體(LED)具有耗電量低、元件壽命長、無須暖燈時間、反應速度快等優點，再加上其體積小、耐震動、適合量產，容易配合應用上的需求製成極小或陣列式的元件，目前已普遍使用於資訊、通訊及消費性電子產品的指示器與顯示裝置上，成為日常生活中不可或缺的重要元件。The light-emitting diode (LED) has the advantages of low power consumption, long component life, no need for warming time, fast reaction speed, etc., plus its small size, vibration resistance, and mass production, which is easy to meet the needs of the application. Very small or arrayed components are now commonly used in indicators and display devices for information, communication and consumer electronics, making them an indispensable component in everyday life.

發光二極體晶片在使用前需先進行封裝。現今封裝技術除著眼於提高光汲取效率外，另一重要關鍵技術是降低封裝結構的熱應力，以增加使用壽命和提高可靠度。The LED chip needs to be packaged before use. In addition to focusing on improving light extraction efficiency, another important key technology in today's packaging technology is to reduce the thermal stress of the package structure to increase the service life and improve reliability.

圖1繪示習知之一種發光二極體封裝結構的剖面圖。請參照圖1，習知的發光二極體封裝結構100具有一導線架110、一發光二極體晶片120、一導線130、一封裝殼體140以及一封裝膠體150，其中封裝殼體140包覆導線架110並具有一凹槽R，凹槽R的底部具有暴露部分導線架110的二開口142、144，其中封裝殼體140具有一分隔開口142、144的間隔部146，間隔部146突出於導線架110之朝向凹槽R的一表面112。發光二極體晶片120配置於導線架110的表面112上並位於開口142中，導線130連接發光二極體晶片120與開口144所暴露出的導線架110。封裝膠體150配置於凹槽R中，以包覆導線130與發光二極體晶片120。1 is a cross-sectional view showing a conventional light emitting diode package structure. Referring to FIG. 1 , a conventional LED package structure 100 has a lead frame 110 , a light emitting diode chip 120 , a wire 130 , a package body 140 , and an encapsulant 150 . The lead frame 110 has a recess R, and the bottom of the recess R has two openings 142, 144 exposing a portion of the lead frame 110, wherein the package housing 140 has a partition 146 separating the openings 142, 144, and the spacer 146 protrudes A surface 112 of the lead frame 110 facing the recess R. The LED chip 120 is disposed on the surface 112 of the lead frame 110 and located in the opening 142. The wire 130 connects the LED array 120 and the lead frame 110 exposed by the opening 144. The encapsulant 150 is disposed in the recess R to cover the lead 130 and the LED wafer 120.

在打線的過程中，可利用銲頭B將導線130接著至發光二極體晶片120，然後，使銲頭B拉著導線130沿著進銲路徑A移動，以將導線130接著至開口144所暴露出的導線架110。然而，銲頭B在移動的過程中，容易因撞擊突出於表面112之間隔部146而導致銲接失敗，故此種封裝殼體140的設計會增加焊線的加工難度與製造成本。In the process of wire bonding, the wire lead 130 can be followed by the horn B to the light emitting diode chip 120, and then the horn B is pulled along the wire transfer path A to move the wire 130 to the opening 144. The exposed lead frame 110. However, during the movement of the horn B, it is easy to cause the welding failure due to the impact protruding from the space 146 of the surface 112. Therefore, the design of the package housing 140 increases the processing difficulty and manufacturing cost of the bonding wire.

本發明提供一種發光二極體封裝結構，其封裝殼體的設計可提升焊接製程的良率。The invention provides a light emitting diode package structure, and the design of the package shell can improve the yield of the soldering process.

本發明提出一種發光二極體封裝結構包括一導線架、一封裝殼體、一發光二極體晶片以及一透光膠體。導線架具有彼此分隔設置之一第一電極及一第二電極。第一電極及第二電極係容置於封裝殼體內，封裝殼體包括一具有一底部及一圍壁之凹槽，凹槽之底部具有一覆蓋層，係覆蓋導線架並具有一開口，開口暴露第一電極之一端、第二電極之一端及設置於兩者之間並且與兩者連接之一間隔部，間隔部與第一電極之端、第二電極之端大致上共平面設置。發光二極體晶片配置於凹槽內，發光二極體晶片與導線架電性連接。透光膠體填充於凹槽內。The invention provides a light emitting diode package structure comprising a lead frame, a package housing, a light emitting diode chip and a transparent colloid. The lead frame has a first electrode and a second electrode disposed apart from each other. The first electrode and the second electrode are housed in the package housing. The package housing includes a recess having a bottom portion and a surrounding wall. The bottom portion of the recess has a cover layer covering the lead frame and having an opening. One end of the first electrode, one end of the second electrode, and a spacer disposed therebetween and connected to the two are exposed, and the spacer is substantially coplanar with the end of the first electrode and the end of the second electrode. The LED chip is disposed in the recess, and the LED chip is electrically connected to the lead frame. The light-transmitting colloid is filled in the groove.

在本發明之一實施例中，第一電極之另一端及第二電極之另一端係分別自封裝殼體內向外延伸至封裝殼體之一底面上。In an embodiment of the invention, the other end of the first electrode and the other end of the second electrode extend outwardly from the inside of the package housing to a bottom surface of the package housing.

在本發明之一實施例中，發光二極體晶片配置於開口暴露的第一電極之端上。In one embodiment of the invention, the light emitting diode chip is disposed on the end of the exposed first electrode of the opening.

在本發明之一實施例中，發光二極體晶片藉由一第一導線與導線架電性連接。In an embodiment of the invention, the LED chip is electrically connected to the lead frame by a first wire.

在本發明之一實施例中，發光二極體晶片藉由一第二導線與導線架電性連接，第一導線與第二導線設置於發光二極體晶片之同一側。In one embodiment of the invention, the LED chip is electrically connected to the lead frame by a second wire, and the first wire and the second wire are disposed on the same side of the LED chip.

在本發明之一實施例中，發光二極體封裝結構更包括一散熱片，開口暴露散熱片之一端且發光二極體晶片設置在散熱片之端上，而散熱片之另一端係自封裝殼體內向外延伸。In an embodiment of the invention, the LED package further includes a heat sink, the opening exposing one end of the heat sink and the LED chip is disposed on the end of the heat sink, and the other end of the heat sink is self-packaging The inside of the housing extends outward.

在本發明之一實施例中，發光二極體晶片藉由兩導線與導線架電性連接。In an embodiment of the invention, the LED chip is electrically connected to the lead frame by two wires.

在本發明之一實施例中，開口更包括一延伸部，延伸部係暴露出散熱片之端及設置在散熱片之端上的發光二極體晶片。In an embodiment of the invention, the opening further includes an extension portion exposing the end of the heat sink and the light emitting diode chip disposed on the end of the heat sink.

本發明提出一種發光二極體封裝結構包括一導線架、一封裝殼體、一發光二極體晶片以及一透光膠體。導線架具有彼此分隔設置之一第一電極及一第二電極。第一電極及第二電極係容置於封裝殼體內，封裝殼體包括一具有一底部及一圍壁之凹槽，凹槽之底部具有一覆蓋層，係覆蓋導線架並具有一開口，開口暴露第一電極之一端與第二電極之一端。發光二極體晶片配置於開口內，發光二極體晶片藉由一第一導線與第二電極之一電接點電性連接，電接點與發光二極體晶片之間為一平面。透光膠體填充於凹槽內。The invention provides a light emitting diode package structure comprising a lead frame, a package housing, a light emitting diode chip and a transparent colloid. The lead frame has a first electrode and a second electrode disposed apart from each other. The first electrode and the second electrode are housed in the package housing. The package housing includes a recess having a bottom portion and a surrounding wall. The bottom portion of the recess has a cover layer covering the lead frame and having an opening. One end of the first electrode and one end of the second electrode are exposed. The light emitting diode chip is disposed in the opening, and the light emitting diode chip is electrically connected to one of the second electrodes by a first wire, and the electrical contact is planar with the light emitting diode chip. The light-transmitting colloid is filled in the groove.

在本發明之一實施例中，第一電極之另一端及第二電極之另一端係分別自封裝殼體內向外延伸至封裝殼體之一底面上。In an embodiment of the invention, the other end of the first electrode and the other end of the second electrode extend outwardly from the inside of the package housing to a bottom surface of the package housing.

在本發明之一實施例中，平面包括第一電極之端、第二電極之端以及至少一間隔部。In an embodiment of the invention, the plane includes an end of the first electrode, an end of the second electrode, and at least one spacer.

在本發明之一實施例中，間隔部設置在第一電極之端與第二電極之端之間，並與第一電極之端與第二電極之端連接。In an embodiment of the invention, the spacer is disposed between the end of the first electrode and the end of the second electrode, and is connected to the end of the first electrode and the end of the second electrode.

在本發明之一實施例中，發光二極體晶片藉由一第二導線與第一電極的端電性連接。In an embodiment of the invention, the LED chip is electrically connected to the end of the first electrode by a second wire.

在本發明之一實施例中，發光二極體封裝結構更包括一散熱片，開口暴露散熱片之一端且發光二極體晶片設置在散熱片之端上，而散熱片之另一端係自封裝殼體內向外延伸。In an embodiment of the invention, the LED package further includes a heat sink, the opening exposing one end of the heat sink and the LED chip is disposed on the end of the heat sink, and the other end of the heat sink is self-packaging The inside of the housing extends outward.

在本發明之一實施例中，發光二極體晶片藉由兩導線分別與第一電極之端與第二電極之端的電接點電性連接。In one embodiment of the invention, the LED chip is electrically connected to the electrical contacts of the ends of the first electrode and the ends of the second electrode by two wires.

在本發明之一實施例中，平面包括散熱片之端、第一電極之端、第二電極之端以及多個間隔部。In an embodiment of the invention, the plane includes an end of the heat sink, an end of the first electrode, an end of the second electrode, and a plurality of spacers.

在本發明之一實施例中，間隔部分別設置在散熱片之端與第一電極之端之間以及散熱片之端與第二電極之端之間。In an embodiment of the invention, the spacers are respectively disposed between the end of the heat sink and the end of the first electrode and between the end of the heat sink and the end of the second electrode.

基於上述，本發明之封裝殼體的間隔部係與第一電極的一端以及第二電極的一端大致上共平面，因此，本發明可避免焊頭於打線的過程中撞擊間隔部，進而可提升焊接製程的良率並降低製作成本。Based on the above, the spacer of the package housing of the present invention is substantially coplanar with one end of the first electrode and one end of the second electrode. Therefore, the present invention can prevent the welding head from hitting the spacer during the threading process, thereby improving The yield of the soldering process and the cost of production.

為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

圖2A繪示本發明一實施例之發光二極體封裝結構的示意圖，圖2B繪示圖2A之發光二極體封裝結構的俯視圖，圖2C繪示圖2B之發光二極體封裝結構沿I-I’線段的剖面圖。2A is a schematic view of a light emitting diode package structure according to an embodiment of the present invention, FIG. 2B is a top view of the light emitting diode package structure of FIG. 2A, and FIG. 2C is a second embodiment of the light emitting diode package structure of FIG. A section of the -I' line segment.

請同時參照圖2A、圖2B與圖2C，發光二極體封裝結構200包括一導線架210、一封裝殼體220、一發光二極體晶片230、一第一導線242以及一透光膠體250，其中導線架210具有彼此分隔設置之一第一電極E1及一第二電極E2。Referring to FIG. 2A , FIG. 2B and FIG. 2C , the LED package structure 200 includes a lead frame 210 , a package housing 220 , a LED array 230 , a first lead 242 , and a transparent colloid 250 . The lead frame 210 has one of the first electrode E1 and the second electrode E2 disposed apart from each other.

封裝殼體220包覆部分導線架210，換言之，部分導線架210係容置於封裝殼體220內。詳細而言，在本實施例中，第一電極E1之一第三端T3及第二電極E2之一第四端T4係分別自封裝殼體220內向外延伸至封裝殼體220之一底面226上。封裝殼體220具有一間隔部I，間隔部I設置於第一電極E1的一第一端T1與第二電極E2的一第二端T2之間並且與兩者連接，且間隔部I與第一端T1及第二端T2大致上共平面設置。換言之，一平面P包括間隔部I、第一端T1及第二端T2。The package housing 220 covers a portion of the lead frame 210, in other words, a portion of the lead frame 210 is received within the package housing 220. In detail, in this embodiment, one of the third end T3 of the first electrode E1 and the fourth end T4 of the second electrode E2 extend outward from the inside of the package housing 220 to a bottom surface 226 of the package housing 220, respectively. on. The package housing 220 has a spacer portion I disposed between a first end T1 of the first electrode E1 and a second end T2 of the second electrode E2 and connected to the two, and the spacer portion I and the One end T1 and the second end T2 are substantially coplanar. In other words, a plane P includes a spacer portion I, a first end T1, and a second end T2.

封裝殼體220具有一凹槽222，凹槽222具有一底部及一圍壁，且凹槽222之底部具有一覆蓋層224，覆蓋層224覆蓋導線架210並具有一開口224a，開口224a暴露第一端T1、第二端T2以及間隔部I。詳細而言，第一端T1與第二端T2之間彼此分離且存在一間隙G，且間隔部I填滿於間隙G中，開口224a位於間隙G上方。封裝殼體220的材質例如為高分子材料。The package housing 220 has a recess 222. The recess 222 has a bottom and a surrounding wall. The bottom of the recess 222 has a cover layer 224. The cover layer 224 covers the lead frame 210 and has an opening 224a. The opening 224a is exposed. One end T1, second end T2, and spacer I. In detail, the first end T1 and the second end T2 are separated from each other and there is a gap G, and the spacer 1 is filled in the gap G, and the opening 224a is located above the gap G. The material of the package case 220 is, for example, a polymer material.

在本實施例中，開口224a於側邊延伸有一延伸部224b並暴露出第二端T2，實質上為一長條狀開口，且延伸部224b延伸的方向V1實質上平行於第一導線242的打線方向V2。開口224a的深度D1可小於凹槽222的深度D2，且開口224a的側壁S可圍繞發光二極體晶片230與第一導線242。In this embodiment, the opening 224a has an extending portion 224b extending from the side and exposing the second end T2, which is substantially an elongated opening, and the extending direction VTb extends in a direction substantially parallel to the first wire 242. Line direction V2. The depth D1 of the opening 224a may be smaller than the depth D2 of the groove 222, and the sidewall S of the opening 224a may surround the LED array 230 and the first wire 242.

發光二極體晶片230配置於凹槽222內並位於第一端T1上，發光二極體晶片230例如為一垂直式發光二極體晶片。在本實施例中，第一導線242連接發光二極體晶片230與第二端T2的一電接點C，且電接點C與發光二極體晶片230之間為一平面。The LED array 230 is disposed in the recess 222 and located on the first end T1. The LED array 230 is, for example, a vertical LED chip. In this embodiment, the first wire 242 is connected to an electrical contact C of the LED substrate 230 and the second terminal T2, and the electrical contact C and the LED chip 230 are in a plane.

值得注意的是，由於本實施例之封裝殼體220的間隔部I係與第一電極E1的第一端T1以及第二電極E2的第二端T2大致上共平面(或者是電接點C與發光二極體晶片230之間為一平面)，因此，本實施例可避免焊頭於打線的過程中撞擊間隔部I，進而可提升焊接製程的良率並降低製作成本。It should be noted that the spacer portion I of the package housing 220 of the present embodiment is substantially coplanar (or the electrical contact C) with the first end T1 of the first electrode E1 and the second end T2 of the second electrode E2. There is a plane between the LED and the LED chip 230. Therefore, the embodiment can prevent the soldering tip from striking the spacer I during the wire bonding process, thereby improving the yield of the soldering process and reducing the manufacturing cost.

或者是說，在本實施例中，第一導線242於導線架210上的正投影不與覆蓋層224於導線架210上的正投影重疊，換言之，第一導線242於導線架210上的正投影完全位於開口224a中。值得注意的是，由於第一導線242於導線架210上的正投影完全位於開口224a中，因此，第一導線242與覆蓋層224不會重疊，如此一來，在打線的過程中，銲線機的銲頭(未繪示)於銲接路徑上不會受到覆蓋層224的阻礙。In other words, in the present embodiment, the orthographic projection of the first wire 242 on the lead frame 210 does not overlap with the orthographic projection of the cover layer 224 on the lead frame 210, in other words, the positive of the first wire 242 on the lead frame 210. The projection is completely in the opening 224a. It should be noted that since the orthographic projection of the first wire 242 on the lead frame 210 is completely located in the opening 224a, the first wire 242 and the cover layer 224 do not overlap, and thus, during the wire bonding process, the wire bonding wire The horn of the machine (not shown) is not obstructed by the cover layer 224 on the welding path.

承接上述，第一端T1之暴露於開口224a中的表面積大小可視發光二極體晶片230的大小而作調整，第二端T2之暴露於開口224a中的表面積大小可視第一導線242的總數而作調整。在本實施例中，第一端T1之暴露於開口224a中的表面積可大於第二端T2之暴露於開口224a中的表面積。當然，在其他實施例中，第一端T1之暴露於開口224a中的表面積亦可小於或等於第二端T2之暴露於開口224a中的表面積。In view of the above, the surface area of the first end T1 exposed to the opening 224a can be adjusted according to the size of the LED array 230, and the surface area of the second end T2 exposed to the opening 224a can be regarded as the total number of the first wires 242. Make adjustments. In this embodiment, the surface area of the first end T1 exposed in the opening 224a may be greater than the surface area of the second end T2 exposed in the opening 224a. Of course, in other embodiments, the surface area of the first end T1 exposed in the opening 224a may also be less than or equal to the surface area of the second end T2 exposed in the opening 224a.

為保護發光二極體晶片230與第一導線242免於受到外界環境的污染或氧化，可在凹槽222與開口224a中填充一透光膠體250，透光膠體250包覆發光二極體晶片230與第一導線242，且覆蓋層224位於導線架210與透光膠體250之間。透光膠體250之材質例如是環氧樹脂(epoxy resin)、矽膠(silicone)、紫外線固化(UV-cured)膠或是其他適當的高分子材料，而且，透光膠體250可摻有螢光粉，以改變發光二極體晶片230所提供之光線的顏色。In order to protect the LED body 230 and the first wire 242 from external environment pollution or oxidation, a transparent colloid 250 may be filled in the groove 222 and the opening 224a, and the transparent colloid 250 covers the LED chip. 230 and the first wire 242, and the cover layer 224 is located between the lead frame 210 and the transparent colloid 250. The material of the transparent colloid 250 is, for example, an epoxy resin, a silicone, a UV-cured adhesive or other suitable polymer materials, and the transparent colloid 250 may be doped with a phosphor powder. To change the color of the light provided by the LED array 230.

值得注意的是，本實施例是利用覆蓋層224來分隔透光膠體250與導線架210，以減少存在於透光膠體250與導線架210之間的膠合面U的面積。再者，覆蓋層224與透光膠體250的熱膨脹係數較為接近(二者的材質例如皆為高分子材料)，故覆蓋層224與透光膠體250之間不易因受熱而產生脫層的現象，進而可增加發光二極體封裝結構200的使用壽命與可靠度。It should be noted that, in this embodiment, the cover layer 224 is used to separate the transparent colloid 250 from the lead frame 210 to reduce the area of the bonding surface U existing between the transparent colloid 250 and the lead frame 210. In addition, the thermal expansion coefficient of the cover layer 224 and the transparent colloid 250 are relatively close (the materials of both are polymer materials, for example), so that the cover layer 224 and the transparent colloid 250 are not easily delaminated by heat. In turn, the service life and reliability of the LED package structure 200 can be increased.

圖3A與圖4A繪示圖2A之發光二極體封裝結構的二種變化，圖3B為圖3A之發光二極體封裝結構的俯視圖，圖4B為圖4A之發光二極體封裝結構的俯視圖。3A and FIG. 4A illustrate two variations of the LED package structure of FIG. 2A, FIG. 3B is a top view of the LED package structure of FIG. 3A, and FIG. 4B is a top view of the LED package structure of FIG. .

請同時參照圖3A與圖3B，在本實施例中，發光二極體封裝結構300的結構相似於圖2A的發光二極體封裝結構200的結構，兩者的差異之處在於發光二極體封裝結構300額外具有一第二導線244，且第二導線244連接第一端T1以及發光二極體晶片230，第一導線242與第二導線244設置於發光二極體晶片230之同一側，發光二極體晶片230例如為一水平式發光二極體晶片。Referring to FIG. 3A and FIG. 3B simultaneously, in the embodiment, the structure of the LED package structure 300 is similar to the structure of the LED package structure 200 of FIG. 2A, and the difference between the two is the LED. The package structure 300 has a second wire 244, and the second wire 244 is connected to the first end T1 and the LED chip 230. The first wire 242 and the second wire 244 are disposed on the same side of the LED chip 230. The light emitting diode chip 230 is, for example, a horizontal light emitting diode chip.

請同時參照圖4A與圖4B，在本實施例中，發光二極體封裝結構400的結構相似於圖2A的發光二極體封裝結構200的結構，兩者的差異之處在於發光二極體封裝結構400更具有一散熱片410，且發光二極體晶片230設置在散熱片410之一端412上，其中覆蓋層224的開口224a暴露散熱片410之一端412與發光二極體晶片230，而散熱片410之另一端414係自封裝殼體220內向外延伸。在本實施例中，開口224a更包括一延伸部224b，延伸部224b係暴露出散熱片410之一端412及設置在散熱片410之一端412上的發光二極體晶片230。在本實施例中，平面P包括散熱片410之一端412、第一電極E1之第一端T1、第二電極E2之第二端T2以及多個間隔部I。Referring to FIG. 4A and FIG. 4B simultaneously, in the embodiment, the structure of the LED package structure 400 is similar to the structure of the LED package structure 200 of FIG. 2A, and the difference between the two is the LED. The package structure 400 further has a heat sink 410, and the light emitting diode chip 230 is disposed on one end 412 of the heat sink 410, wherein the opening 224a of the cover layer 224 exposes one end 412 of the heat sink 410 and the light emitting diode wafer 230, and The other end 414 of the heat sink 410 extends outwardly from the inside of the package housing 220. In the embodiment, the opening 224a further includes an extending portion 224b exposing one end 412 of the heat sink 410 and the LED chip 230 disposed on one end 412 of the heat sink 410. In the present embodiment, the plane P includes one end 412 of the heat sink 410, a first end T1 of the first electrode E1, a second end T2 of the second electrode E2, and a plurality of spacers 1.

在本實施例中，間隔部I分別設置在散熱片410之一端412與第一電極E1之第一端T1之間以及散熱片410之一端412與第二電極E2之第二端T2之間。換言之，散熱片410、第一端T1與第二端T2彼此分離，且第一導線242連接發光二極體晶片230與第二端T2，第二導線244連接第一端T1以及發光二極體晶片230，其中發光二極體晶片230可為一水平式發光二極體晶片。In this embodiment, the spacers 1 are respectively disposed between one end 412 of the heat sink 410 and the first end T1 of the first electrode E1 and between the one end 412 of the heat sink 410 and the second end T2 of the second electrode E2. In other words, the heat sink 410, the first end T1 and the second end T2 are separated from each other, and the first wire 242 is connected to the LED chip 230 and the second end T2, and the second wire 244 is connected to the first end T1 and the LED. The wafer 230, wherein the light emitting diode chip 230 can be a horizontal light emitting diode chip.

值得注意的是，由於散熱片410、第一端T1與第二端T2彼此分離，因此，發光二極體晶片230於發光時所產生的熱只會傳遞至散熱片410，而不會影響第一端T1與第二端T2。換言之，發光二極體封裝結構400為一熱電分離式的結構。It is to be noted that, since the heat sink 410, the first end T1 and the second end T2 are separated from each other, the heat generated by the LED chip 230 when being illuminated is only transmitted to the heat sink 410 without affecting the first One end T1 and the second end T2. In other words, the light emitting diode package structure 400 is a thermoelectric separation type structure.

綜上所述，由於本發明之封裝殼體的間隔部係與第一電極的一端以及第二電極的一端大致上共平面，因此，本發明可避免焊頭於打線的過程中撞擊間隔部，進而可提升焊接製程的良率並降低製作成本。In summary, since the spacer of the package housing of the present invention is substantially coplanar with one end of the first electrode and one end of the second electrode, the present invention can prevent the welding head from striking the spacer during the wire bonding process. In turn, the yield of the soldering process can be improved and the manufacturing cost can be reduced.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100、200、300、400．．．發光二極體封裝結構100, 200, 300, 400. . . Light emitting diode package structure

110、210．．．導線架110, 210. . . Lead frame

112．．．表面112. . . surface

120、230．．．發光二極體晶片120, 230. . . Light-emitting diode chip

130．．．導線130. . . wire

140、220．．．封裝殼體140, 220. . . Package housing

142、144、224a．．．開口142, 144, 224a. . . Opening

146、I．．．間隔部146, I. . . Spacer

150．．．封裝膠體150. . . Encapsulant

222、R．．．凹槽222, R. . . Groove

224．．．覆蓋層224. . . Cover layer

224b．．．延伸部224b. . . Extension

226．．．底面226. . . Bottom

242．．．第一導線242. . . First wire

244．．．第二導線244. . . Second wire

250．．．透光膠體250. . . Light-transmitting colloid

410．．．散熱片410. . . heat sink

412、414．．．散熱片之一端412, 414. . . One end of the heat sink

A．．．進銲路徑A. . . Feed path

B．．．焊頭B. . . Welding head

C．．．電接點C. . . Electric contact

D1、D2．．．深度D1, D2. . . depth

E1．．．第一電極E1. . . First electrode

E2．．．第二電極E2. . . Second electrode

G．．．間隙G. . . gap

P．．．平面P. . . flat

S．．．側壁S. . . Side wall

T1．．．第一端T1. . . First end

T2．．．第二端T2. . . Second end

T3．．．第三端T3. . . Third end

T4．．．第四端T4. . . Fourth end

U．．．膠合面U. . . Glued surface

V1．．．延伸方向V1. . . Extension direction

V2．．．打線方向V2. . . Line direction

圖1繪示習知之一種發光二極體封裝結構的剖面圖。1 is a cross-sectional view showing a conventional light emitting diode package structure.

圖2A繪示本發明一實施例之發光二極體封裝結構的示意圖，圖2B繪示圖2A之發光二極體封裝結構的俯視圖，圖2C繪示圖2B之發光二極體封裝結構沿I-I’線段的剖面圖。2A is a schematic view of a light emitting diode package structure according to an embodiment of the present invention, FIG. 2B is a top view of the light emitting diode package structure of FIG. 2A, and FIG. 2C is a second embodiment of the light emitting diode package structure of FIG. A section of the -I' line segment.

圖3A與圖4A繪示圖2A之發光二極體封裝結構的二種變化，圖3B為圖3A之發光二極體封裝結構的俯視圖，圖4B為圖4A之發光二極體封裝結構的俯視圖。3A and FIG. 4A illustrate two variations of the LED package structure of FIG. 2A, FIG. 3B is a top view of the LED package structure of FIG. 3A, and FIG. 4B is a top view of the LED package structure of FIG. .

200．．．發光二極體封裝結構200. . . Light emitting diode package structure

210．．．導線架210. . . Lead frame

220．．．封裝殼體220. . . Package housing

222．．．凹槽222. . . Groove

224．．．覆蓋層224. . . Cover layer

224a．．．開口224a. . . Opening

230．．．發光二極體晶片230. . . Light-emitting diode chip

242．．．第一導線242. . . First wire

250．．．透光膠體250. . . Light-transmitting colloid

E1．．．第一電極E1. . . First electrode

E2．．．第二電極E2. . . Second electrode

I．．．間隔部I. . . Spacer

T1．．．第一端T1. . . First end

T2．．．第二端T2. . . Second end

Claims (17)

一種發光二極體封裝結構，包括：一導線架，具有彼此分隔設置之一第一電極及一第二電極；一封裝殼體，該第一電極及該第二電極係容置於該封裝殼體內，該封裝殼體包括一具有一底部及一圍壁之凹槽，該凹槽之底部具有一覆蓋層，係覆蓋該導線架並具有一開口，該開口暴露該第一電極之一端、該第二電極之一端及設置於兩者之間並且與兩者連接之一間隔部，該間隔部與該第一電極之該端、該第二電極之該端大致上共平面設置；一發光二極體晶片，配置於該凹槽內，該發光二極體晶片與該導線架電性連接；以及一透光膠體，填充於該凹槽內。A light-emitting diode package structure includes: a lead frame having a first electrode and a second electrode disposed apart from each other; and a package housing, wherein the first electrode and the second electrode are housed in the package In the body, the package housing includes a recess having a bottom portion and a surrounding wall, the bottom portion of the recess having a cover layer covering the lead frame and having an opening exposing one end of the first electrode One end of the second electrode and a spacer disposed therebetween and connected to the two, the spacer being substantially coplanar with the end of the first electrode and the end of the second electrode; The polar body wafer is disposed in the recess, the LED body is electrically connected to the lead frame, and a transparent colloid is filled in the recess. 如申請專利範圍第1項所述之發光二極體封裝結構，其中該第一電極之另一端及該第二電極之另一端係分別自該封裝殼體內向外延伸至該封裝殼體之一底面上。The light emitting diode package structure of claim 1, wherein the other end of the first electrode and the other end of the second electrode extend outward from the inside of the package housing to one of the package housings On the bottom surface. 如申請專利範圍第1項所述之發光二極體封裝結構，其中該發光二極體晶片配置於該開口暴露的第一電極之該端上。The light emitting diode package structure of claim 1, wherein the light emitting diode chip is disposed on the end of the exposed first electrode of the opening. 如申請專利範圍第1項所述之發光二極體封裝結構，其中該發光二極體晶片藉由一第一導線與該導線架電性連接。The light emitting diode package structure of claim 1, wherein the light emitting diode chip is electrically connected to the lead frame by a first wire. 如申請專利範圍第4項所述之發光二極體封裝結構，其中該發光二極體晶片藉由一第二導線與該導線架電性連接，該第一導線與該第二導線設置於該發光二極體晶片之同一側。The light emitting diode package of claim 4, wherein the LED chip is electrically connected to the lead frame by a second wire, wherein the first wire and the second wire are disposed on the wire The same side of the light emitting diode chip. 如申請專利範圍第1項所述之發光二極體封裝結構，其更包括一散熱片，該開口暴露該散熱片之一端且該發光二極體晶片設置在該散熱片之該端上，而該散熱片之另一端係自該封裝殼體內向外延伸。The light emitting diode package structure of claim 1, further comprising a heat sink, the opening exposing one end of the heat sink and the light emitting diode chip is disposed on the end of the heat sink The other end of the heat sink extends outwardly from the inside of the package housing. 如申請專利範圍第6項所述之發光二極體封裝結構，其中該發光二極體晶片藉由兩導線與該導線架電性連接。The light emitting diode package structure of claim 6, wherein the light emitting diode chip is electrically connected to the lead frame by two wires. 如申請專利範圍第6項所述之發光二極體封裝結構，其中該開口更包括一延伸部，該延伸部係暴露出該散熱片之該端及設置在該散熱片之該端上的該發光二極體晶片。The light emitting diode package structure of claim 6, wherein the opening further comprises an extension portion exposing the end of the heat sink and the one disposed on the end of the heat sink Light-emitting diode wafer. 一種發光二極體封裝結構，包括：一導線架，具有彼此分隔設置之一第一電極及一第二電極；一封裝殼體，該第一電極及該第二電極係容置於該封裝殼體內，該封裝殼體包括一具有一底部及一圍壁之凹槽，該凹槽之底部具有一覆蓋層，係覆蓋該導線架並具有一開口，該開口暴露該第一電極之一端與該第二電極之一端；一發光二極體晶片，配置於該開口內，該發光二極體晶片藉由一第一導線與該第二電極之一電接點電性連接，該第一導線於該導線架上的正投影完全位於該開口中，且該電接點與該發光二極體晶片之間為一平面；以及一透光膠體，填充於該凹槽內。 A light-emitting diode package structure includes: a lead frame having a first electrode and a second electrode disposed apart from each other; and a package housing, wherein the first electrode and the second electrode are housed in the package In the body, the package housing includes a recess having a bottom portion and a surrounding wall, the bottom portion of the recess having a cover layer covering the lead frame and having an opening exposing one end of the first electrode and the One of the second electrodes; a light-emitting diode chip disposed in the opening, the light-emitting diode chip being electrically connected to one of the second electrodes by a first wire, the first wire being The orthographic projection on the lead frame is completely located in the opening, and the electrical contact is a plane between the LED and the light-emitting diode; and a transparent colloid is filled in the groove. 如申請專利範圍第9項所述之發光二極體封裝結構，其中該第一電極之另一端及該第二電極之另一端係分別自該封裝殼體內向外延伸至該封裝殼體之一底面上。 The light emitting diode package structure of claim 9, wherein the other end of the first electrode and the other end of the second electrode extend outward from the inside of the package housing to one of the package housings On the bottom surface. 如申請專利範圍第9項所述之發光二極體封裝結構，其中該平面包括該第一電極之該端、該第二電極之該端以及至少一間隔部。 The light emitting diode package structure of claim 9, wherein the plane comprises the end of the first electrode, the end of the second electrode, and at least one spacer. 如申請專利範圍第11項所述之發光二極體封裝結構，其中該間隔部設置在該第一電極之該端與該第二電極之該端之間，並與該第一電極之該端與該第二電極之該端連接。 The light emitting diode package structure of claim 11, wherein the spacer is disposed between the end of the first electrode and the end of the second electrode, and the end of the first electrode Connected to the end of the second electrode. 如申請專利範圍第9項所述之發光二極體封裝結構，其中該發光二極體晶片藉由一第二導線與該第一電極的該端電性連接。 The light emitting diode package structure of claim 9, wherein the light emitting diode chip is electrically connected to the end of the first electrode by a second wire. 如申請專利範圍第9項所述之發光二極體封裝結構，其更包括一散熱片，該開口暴露該散熱片之一端且該發光二極體晶片設置在該散熱片之該端上，而該散熱片之另一端係自該封裝殼體內向外延伸。 The light emitting diode package structure of claim 9, further comprising a heat sink, the opening exposing one end of the heat sink and the light emitting diode chip is disposed on the end of the heat sink The other end of the heat sink extends outwardly from the inside of the package housing. 如申請專利範圍第14項所述之發光二極體封裝結構，其中該發光二極體晶片藉由兩導線分別與該第一電極之該端與該第二電極之該端的電接點電性連接。 The illuminating diode package structure of claim 14, wherein the illuminating diode is electrically connected to the end of the first electrode and the end of the second electrode by two wires respectively. connection. 如申請專利範圍第14項所述之發光二極體封裝結構，其中該平面包括該散熱片之該端、該第一電極之該 端、該第二電極之該端以及多個間隔部。 The light emitting diode package structure of claim 14, wherein the plane includes the end of the heat sink, the first electrode The end, the end of the second electrode, and the plurality of spacers. 如申請專利範圍第16項所述之發光二極體封裝結構，其中該些間隔部分別設置在該散熱片之該端與該第一電極之該端之間以及該散熱片之該端與該第二電極之該端之間。 The light emitting diode package structure of claim 16, wherein the spacers are respectively disposed between the end of the heat sink and the end of the first electrode and the end of the heat sink Between the ends of the second electrode.
TW098135965A 2008-12-15 2009-10-23 Light emitting diode package structure TWI460889B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070034889A (en) * 2005-09-26 2007-03-29 세메스 주식회사 Board Feeder
TW200931691A (en) * 2007-12-06 2009-07-16 Seoul Semiconductor Co Ltd LED package and method for fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070034889A (en) * 2005-09-26 2007-03-29 세메스 주식회사 Board Feeder
TW200931691A (en) * 2007-12-06 2009-07-16 Seoul Semiconductor Co Ltd LED package and method for fabricating the same

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