TWI456688B - Electrostatic chuck structure and method for easily releasing wafer - Google Patents

Claims (13)

An electrostatic chuck structure for easily releasing a wafer, comprising a susceptor (110) and a dielectric layer (120) disposed on a top portion of the susceptor (110); and a wafer (200) disposed on the dielectric layer (120) An electrostatic attraction between the electrical layer (120) and the wafer (200) is generated by holding and holding the wafer (200); wherein the dielectric layer (120) is provided with a lifted dielectric layer (120) A plurality of heaters (130) of temperature to reduce electrostatic attraction between the dielectric layer (120) and the wafer (200). An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the dielectric layer (120) is provided with a plurality of partitions, wherein the heating body (130) is embedded in several partitions. An electrostatic chuck structure for releasing a wafer as described in claim 2, wherein the plurality of heating bodies (130) are electrically connected to the temperature-increasing power source to generate heat. An electrostatic chuck structure for easily releasing a wafer according to claim 3, wherein the temperature-increasing power source electrically connected to the heating body (130) in the plurality of sections of the dielectric layer (120) has Same or different DC current. An electrostatic chuck structure for easily releasing a wafer according to claim 4, wherein a heating body (130) embedded in a plurality of sections of the dielectric layer (120) is respectively in the dielectric layer (120) The same or different graphic shapes are formed inside. An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein a surface temperature of the dielectric layer (120) raised by the plurality of heating bodies (130) is at the dielectric layer (120) During the alternation of the upper wafer (200) pick-and-place, the original operating temperature is restored due to the electrical connection to the warming power source being disconnected. An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the heating body (130) is a plurality of tungsten wires (131) embedded in the dielectric layer (120). An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the susceptor (110) is further connected to a radio frequency power source to generate an etching gas plasma that reacts with the wafer (200). An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the dielectric layer (120) is made of a thermally conductive ceramic material. An electrostatic chuck structure for releasing a wafer according to claim 1, wherein the dielectric layer (120) is further provided with an electrode (140) electrically connected to the DC electrode power source to generate a suction. Holding the electrostatic attraction of the wafer (200). A method for easily releasing a wafer, comprising the steps of: stepping off an electrode power source electrically connected to an electrode (140) of the dielectric layer (120), and reducing the wafer (200) and dielectric The electrostatic attraction between the layers (120); the step 1.2 is connected to the heating power source electrically connected to the heating body (130) in the dielectric layer (120) to increase the surface temperature of the dielectric layer (120); The heating power source is turned off, and the wafer (200) is removed. A method for easily releasing a wafer according to claim 11, wherein after the step 2 of cutting the temperature-increasing power supply, the method further comprises: picking up the wafer (200) on the dielectric layer (120) During the alternation, the step of raising the surface temperature of the dielectric layer (120) to the original operating temperature. A method for easily releasing a wafer according to claim 11, wherein the electrostatic attraction between the wafer (200) and the dielectric layer (120) for holding and fixing the wafer (200) is It is generated after the power supply of the electrodes is connected.