TWI443204B - Cu-Ni-Si alloy used for conductive spring material - Google Patents

Cu-Ni-Si alloy used for conductive spring material Download PDF

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TWI443204B
TWI443204B TW98110571A TW98110571A TWI443204B TW I443204 B TWI443204 B TW I443204B TW 98110571 A TW98110571 A TW 98110571A TW 98110571 A TW98110571 A TW 98110571A TW I443204 B TWI443204 B TW I443204B
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TW200948990A (en
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Naofumi Maeda
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/06Alloys based on copper with nickel or cobalt as the next major constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026Alloys based on copper

Description

使用於導電性彈簧材之Cu-Ni-Si系合金Cu-Ni-Si alloy for conductive spring materials

本發明係關於一種使用於電子零件用導電性彈簧材之Cu-Ni-Si系合金,尤其係關於一種使用於連接器、端子、繼電器、開關等電子零件且強度、彎曲加工性及導電率之平衡優異之Cu-Ni-Si系合金。The present invention relates to a Cu-Ni-Si alloy for use in a conductive spring material for electronic parts, and more particularly to an electronic component used for connectors, terminals, relays, switches, and the like, and having strength, bending workability, and electrical conductivity. A well-balanced Cu-Ni-Si alloy.

隨著近年來電子機器之輕薄短小化,端子、連接器等亦趨向小型化及薄壁化,而要求強度及彎曲加工性,卡遜(Cu-Ni-Si系)合金、鈹銅及鈦銅等析出強化型銅合金代替先前之磷青銅或黃銅等固溶強化型銅合金,其需求日益增加。其中,卡遜合金之強度與導電率之平衡優異,故使用於連接器等電子零件中之頻率愈來愈高。With the lightness and thinness of electronic devices in recent years, terminals and connectors have also become smaller and thinner, and strength and bending workability are required. Carson (Cu-Ni-Si) alloy, beryllium copper and titanium copper The demand for a precipitated reinforced copper alloy in place of the former solid solution reinforced copper alloy such as phosphor bronze or brass is increasing. Among them, the balance between the strength and the conductivity of the Carson alloy is excellent, so that the frequency used in electronic parts such as connectors is becoming higher and higher.

通常,強度與彎曲加工性係相反之性質,過去以來已對卡遜合金中維持較高之強度且改善彎曲加工性之情況進行研究,廣泛進行如下討論,即,欲藉由調整製造步驟,對結晶粒徑、析出物之個數及形狀、集合組織進行個別或者相互控制,從而改善彎曲加工性。In general, the strength and the bending processability are opposite. In the past, studies have been conducted on maintaining high strength and improving bending workability in the Carson alloy, and the following discussion is widely carried out, that is, by adjusting the manufacturing steps, The crystal grain size, the number and shape of the precipitates, and the aggregate structure are individually or mutually controlled to improve the bending workability.

於專利文獻1中,於更添加有Co、Zn、Mn、Cr、Al之卡遜合金中,抑制溶體化時之晶粒成長,改善彎曲加工性。於專利文獻2中,使卡遜合金含有適量之Ti、Zr、Hf或Th,較佳為使結晶粒徑微細化,由此改善衝壓加工性及彎曲加工性。於專利文獻3中,將卡遜合金中之S含量及O含量限制為小於0.005%,使Sn含量及Mg含量最佳化,視情況使Zn之含量最佳化,進而控制結晶粒徑,由此改善彎曲加工性。In Patent Document 1, in the Carson alloy in which Co, Zn, Mn, Cr, and Al are further added, grain growth during dissolution is suppressed, and bending workability is improved. In Patent Document 2, the Carson alloy contains an appropriate amount of Ti, Zr, Hf or Th, and it is preferable to make the crystal grain size fine, thereby improving press workability and bending workability. In Patent Document 3, the S content and the O content in the Carson alloy are limited to less than 0.005%, and the Sn content and the Mg content are optimized, and the Zn content is optimized as appropriate to control the crystal grain size. This improves the bending workability.

於專利文獻4及專利文獻5中,限制卡遜合金中之S含量,並使Mg、Sn、Zn之含量最佳化,對結晶粒徑及晶粒之縱橫比進行控制,由此改善彎曲加工性及應力緩和性等。於專利文獻6中,對卡遜合金之集合組織進行控制,並將{123}<412>方位之極密度控制於規定範圍,由此改善彎曲加工性。In Patent Document 4 and Patent Document 5, the S content in the Carson alloy is restricted, and the contents of Mg, Sn, and Zn are optimized, and the crystal grain size and the aspect ratio of the crystal grains are controlled, thereby improving the bending process. Sex and stress mitigation. In Patent Document 6, the assembly structure of the Carson alloy is controlled, and the pole density of the {123}<412> orientation is controlled to a predetermined range, thereby improving the bending workability.

於專利文獻7中,對卡遜合金之集合組織進行控制,並以滿足(I(111) +I(311) )/I(220) >2.0之方式控制集合組織,改善彎曲加工性。於專利文獻8中,對卡遜合金中之熱壓延及溶體化處理條件進行調整,使拉伸強度試驗中不會表現出降伏點效果(yield point effect),由此改善彎曲加工性。In Patent Document 7, the aggregate structure of the Carson alloy is controlled, and the aggregate structure is controlled so as to satisfy (I (111) + I (311) ) / I (220) > 2.0, and the bending workability is improved. In Patent Document 8, the conditions of hot rolling and solution treatment in the Carson alloy are adjusted so that the yield point effect is not exhibited in the tensile strength test, thereby improving the bending workability.

[專利文獻1]日本專利特開平5-179377號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 5-179377

[專利文獻2]日本專利特開平6-184681號公報[Patent Document 2] Japanese Patent Laid-Open No. 6-184681

[專利文獻3]日本專利特開平11-222641號公報[Patent Document 3] Japanese Patent Laid-Open No. Hei 11-222641

[專利文獻4]日本專利特開2002-38228號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2002-38228

[專利文獻5]日本專利特開2002-180161號公報[Patent Document 5] Japanese Patent Laid-Open Publication No. 2002-180161

[專利文獻6]日本專利特開2007-92135號公報[Patent Document 6] Japanese Patent Laid-Open Publication No. 2007-92135

[專利文獻7]日本專利特開2006-16629號公報[Patent Document 7] Japanese Patent Laid-Open Publication No. 2006-16629

[專利文獻8]日本專利特開2007-169781號公報[Patent Document 8] Japanese Patent Laid-Open Publication No. 2007-169781

隨著近年來電子零件之微細化,於彎曲加工性評價時,除龜裂之有無以外,彎曲部中產生之褶皺大小亦成為問題。其原因在於:於以彎曲部作為電接頭(electrical contact)之情形時,若褶皺較大,則接觸電阻會變得不穩定,而損及電性連接之可靠性。With the recent miniaturization of electronic components, in the evaluation of bending workability, in addition to the presence or absence of cracks, the size of wrinkles generated in the bent portion also becomes a problem. The reason for this is that when the bent portion is used as an electrical contact, if the wrinkles are large, the contact resistance becomes unstable and the reliability of the electrical connection is impaired.

然而,先前技術中所評價之彎曲加工性為耐彎曲龜裂性,幾乎並未考慮彎曲褶皺,故無法獲得耐彎曲褶皺性優異之Cu-Ni-Si系合金。於專利文獻3中,雖然彎曲加工性評價中揭示有褶皺,但並未對彎曲褶皺之大小進行定量評價,故無法獲得無褶皺之發明例。於專利文獻6中雖進行彎曲褶皺評價,但為了獲得強度及彎曲加工性優異之Cu-Ni-Si系合金,而著眼於{111}正極點圖上之{123}<412>方位(專利文獻6「0016」),並對溶體化處理前之冷壓延及溶體化處理之條件進行調整(專利文獻6「0019」)。於專利文獻8中,亦進行彎曲褶皺評價,但為了獲得強度及彎曲加工性優異之Cu-Ni-Si系合金,而著眼於殘留之Ni-Si粒(專利文獻8「0009」),並對Ni量、Si量或熱壓延及溶體化處理條件進行調整(專利文獻8「0019」)。However, the bending workability evaluated in the prior art is bending crack resistance, and the bending wrinkles are hardly considered, so that the Cu-Ni-Si alloy excellent in bending wrinkle resistance cannot be obtained. In Patent Document 3, although wrinkles are disclosed in the evaluation of bending workability, the size of the curved wrinkles is not quantitatively evaluated, and thus an invention example without wrinkles cannot be obtained. In the patent document 6, although the bending wrinkle evaluation is performed, in order to obtain a Cu-Ni-Si alloy excellent in strength and bending workability, attention is paid to the {123}<412> orientation on the {111} positive dot map (Patent Literature) 6 "0016"), and the conditions of the cold rolling and the solution treatment before the solution treatment are adjusted (Patent Document 6 "0019"). In the case of the Cu-Ni-Si alloy which is excellent in strength and bending workability, the Ni-Si grain remaining is obtained in the patent document 8 (Patent Document 8 "0009"). The amount of Ni, the amount of Si, or the hot rolling and the solution treatment conditions are adjusted (Patent Document 8 "0019").

本發明者等人為了達成上述目的,而與先前技術不同地,根據控制多晶金屬之晶界之觀點,對彎曲加工性進行反覆研究,結果藉由對Cu-Ni-Si系合金之加工熱處理時產生之退火雙晶之產生頻率進行控制,而獲得高強度且彎曲褶皺評價時亦具有良好之彎曲加工性的Cu-Ni-Si系合金。In order to achieve the above object, the inventors of the present invention have studied the bending workability in accordance with the viewpoint of controlling the grain boundary of the polycrystalline metal, and the result is a heat treatment by processing the Cu-Ni-Si alloy. The frequency of generation of the annealed twin crystals is controlled to obtain a Cu-Ni-Si alloy having good bending workability when evaluated for high strength and bending wrinkles.

本發明之Cu-Ni-Si系合金,可作為維持高強度之同時彎曲加工性良好且彎曲褶皺減少的銅合金,而適用於端子、連接器等用途。The Cu-Ni-Si alloy of the present invention can be used as a copper alloy which maintains high strength and has good bending workability and reduced bending wrinkles, and is suitable for applications such as terminals and connectors.

接著,就本發明之必要條件與其作用一併加以說明。Next, the necessary conditions of the present invention and their effects will be described together.

[Ni、Si][Ni, Si]

對Ni及Si進行適當之熱處理,由此形成以Ni2 Si為主之金屬間化合物之微細粒子。結果,合金之強度明顯增加,同時導電性亦上升。Ni and Si are appropriately heat-treated to form fine particles of an intermetallic compound mainly composed of Ni 2 Si. As a result, the strength of the alloy is significantly increased, and the electrical conductivity is also increased.

Ni係以1.0~4.0質量%、較佳為1.5~3質量%之範圍添加。若Ni小於1.0質量%,則無法獲得充分之強度。若Ni超過4.0質量%,則熱壓延時會產生龜裂。Ni is added in the range of 1.0 to 4.0% by mass, preferably 1.5 to 3% by mass. If Ni is less than 1.0% by mass, sufficient strength cannot be obtained. If Ni exceeds 4.0% by mass, cracks may occur due to the hot pressing delay.

Si之添加濃度(質量%)係設為Ni之添加濃度(質量%)之1/6~1/4。若Si之添加濃度少於Ni之添加濃度之1/6,則強度會下降,若多於Ni之添加濃度之1/4,則不僅無助於強度,而且過剩之Si會造成導電性下降。The addition concentration (% by mass) of Si is set to 1/6 to 1/4 of the added concentration (% by mass) of Ni. If the added concentration of Si is less than 1/6 of the added concentration of Ni, the strength is lowered. If it is more than 1/4 of the added concentration of Ni, not only does it contribute to strength, but excessive Si causes a decrease in conductivity.

[Mg、Sn、Zn、Co、Cr][Mg, Sn, Zn, Co, Cr]

Mg具有改善應力緩和特性及熱加工性之效果,但若超過0.2質量%,則鑄造性(鑄件表面)、熱加工性及電鍍耐熱剝離性會下降。因此,將Mg之濃度規定為0.2%以下。Although Mg has an effect of improving stress relaxation properties and hot workability, when it exceeds 0.2% by mass, castability (casting surface), hot workability, and plating heat-resistant peelability are deteriorated. Therefore, the concentration of Mg is made 0.2% or less.

Sn及Zn具有改善強度及耐熱性之作用,此外Sn具有耐應力緩和特性之改善作用,而Zn具有改善焊接耐熱性之作用。Sn係以0.2~1質量%之範圍添加,Zn係以0.2~1質量%之範圍添加。若低於上述範圍,則無法獲得所需之效果,若高於上述範圍,則導電性會下降。Sn and Zn have an effect of improving strength and heat resistance, and Sn has an effect of improving stress relaxation resistance, and Zn has an effect of improving solder heat resistance. Sn is added in the range of 0.2 to 1% by mass, and Zn is added in the range of 0.2 to 1% by mass. If it is less than the above range, the desired effect cannot be obtained, and if it is higher than the above range, the conductivity is lowered.

Co及Cr具有與Si生成化合物並藉由析出來改善強度之作用。此外,Co具有於熱處理時防止晶粒之粗大化之作用,而Cr具有耐熱性之改善作用。Co係以1~1.5質量%之範圍添加,Cr係以0.05~0.2質量%之範圍添加。若低於上述範圍,則無法獲得所需之效果,若高於上述範圍,則使導電性下降。Co and Cr have a function of forming a compound with Si and improving the strength by precipitation. Further, Co has an effect of preventing coarsening of crystal grains during heat treatment, and Cr has an effect of improving heat resistance. Co is added in the range of 1 to 1.5% by mass, and Cr is added in the range of 0.05 to 0.2% by mass. If it is less than the above range, the desired effect cannot be obtained, and if it is higher than the above range, the conductivity is lowered.

[雙晶界面(twin boundary)][twin boundary]

金屬材料通常係具有各種晶體方位(crystal orientation)之晶粒之聚集體,即多晶體,於金屬材料中由於原子排列方法之不同而存在邊界,即晶界。晶界根據相鄰晶粒間之方位差而分為高角度晶界(high-angle grain boundary)、低角度晶界(low-angle grain boundary)、亞晶界(subgrain boundary),通常,晶界係指相鄰晶粒間之方位差為15°以上之高角度晶界。另一方面,晶界根據相鄰晶粒間之一致性而分為隨機晶界及規則晶界。由於Cu-Ni-Si系合金之加工熱處理而產生之退火雙晶係Σ3之規則晶界,晶粒間之一致性較高。The metal material is usually an aggregate of crystal grains having various crystal orientations, that is, a polycrystal in which a boundary exists, that is, a grain boundary due to a difference in atom arrangement method. The grain boundary is divided into a high-angle grain boundary, a low-angle grain boundary, a subgrain boundary, and usually a grain boundary according to the difference in orientation between adjacent grains. It refers to a high-angle grain boundary with a difference in orientation between adjacent grains of 15° or more. On the other hand, the grain boundaries are classified into random grain boundaries and regular grain boundaries according to the consistency between adjacent crystal grains. Due to the regular grain boundary of the annealed bimorph system 产生3 produced by the processing heat treatment of the Cu-Ni-Si alloy, the uniformity between grains is high.

Σ值係表示晶界之一致性之指標,於使夾住晶界之左右晶格重合時,相重合之對應格子點與格子點之密度比為1/n時,處於Σ=n之對應關係。因雙晶界面之原子一致性良好,故於邊界附近不易產生不均勻變形,且於彎曲變形時不易產生以邊界附近為基點之龜裂或褶皺。因此,藉由對包含晶界及雙晶界面之總邊界(於此,低角度晶界及亞晶界除外)中之雙晶界面之比例進行控制,可改善彎曲加工性。The Σ value is an index indicating the consistency of the grain boundaries. When the left and right crystal lattices of the grain boundary are overlapped, the density ratio of the corresponding lattice points to the lattice points is 1/n, and the relationship is Σ=n. . Since the atomic consistency of the twin crystal interface is good, uneven deformation is less likely to occur near the boundary, and cracks or wrinkles near the boundary are less likely to occur at the time of bending deformation. Therefore, the bending workability can be improved by controlling the ratio of the twin interface in the total boundary including the grain boundary and the twin interface (except for the low angle grain boundary and the subgrain boundary).

於本發明之Cu-Ni-Si系合金中,藉由將其總邊界中之雙晶界面(Σ3邊界)之頻率(比例)控制為15%以上且60%以下,較佳為30%以上且60%以下,由此可改善彎曲加工性。若小於15%,則無法獲得所需之彎曲加工性,若超過60%,則溶體化時之晶粒會粗大化,而引起強度下降。In the Cu-Ni-Si alloy of the present invention, the frequency (ratio) of the twin interface (Σ3 boundary) in the total boundary thereof is controlled to be 15% or more and 60% or less, preferably 30% or more. 60% or less, whereby the bending workability can be improved. If it is less than 15%, the desired bending workability cannot be obtained, and if it exceeds 60%, the crystal grains at the time of solution formation are coarsened, and the strength is lowered.

作為求出雙晶界面之比例的方法,例如有利用場致發射掃描電子顯微鏡(Field Emission Scanning Electron Microscope,FESEM)之電子背散射圖案(Electron Back Scattering Pattern,EBSP)法。此方法係基於對試樣表面斜向照射電子束時產生之電子背向散射繞射圖案(菊池圖案(Kikuchi pattern)),對晶體方位進行分析的方法。於利用本方法分析晶體方位之後,求出相鄰晶體方位間之方位差,從而可確定隨機晶界及各規則晶界之比例(晶界特性分布)。因雙晶界面相當於Σ3規則晶界,故雙晶界面之比例可由(規則晶界Σ3之長度總和)/(晶界之長度總和)×100來計算。另外,晶界係指相鄰晶粒間之方位差為15°以上之邊界,不包括低角度晶界或亞晶界。As a method of determining the ratio of the twin crystal interface, for example, an Electron Back Scattering Pattern (EBSP) method using a Field Emission Scanning Electron Microscope (FESEM) is used. This method is based on the method of analyzing the crystal orientation based on an electron backscatter diffraction pattern (Kikuchi pattern) generated when the surface of the sample is obliquely irradiated with an electron beam. After analyzing the crystal orientation by the method, the azimuth difference between adjacent crystal orientations is obtained, thereby determining the ratio of the random grain boundary and the regular grain boundaries (grain boundary property distribution). Since the twin crystal interface corresponds to the Σ3 regular grain boundary, the ratio of the twin crystal interface can be calculated from (the sum of the lengths of the regular grain boundaries Σ3) / (the sum of the lengths of the grain boundaries) × 100. In addition, the grain boundary refers to a boundary where the difference in orientation between adjacent crystal grains is 15° or more, and does not include a low-angle grain boundary or a subgrain boundary.

本發明中之雙晶係退火雙晶,其係隨著由於壓延後之退火所產生之再結晶而生成的雙晶。雙晶之產生頻率與材料之疊差能(stacking fault energy)有相關關係,若疊差能較低,則退火時產生之雙晶頻率會上升,若疊差能較高,則頻率會下降。另一方面,疊差能會隨著增加固溶Ni‧Si量(正確而言係增加固溶Si量)而下降。因此,為了增加雙晶界面頻率而於最終之再結晶退火(於本發明中,與溶體化處理相對應)之前降低疊差能,為此增加固溶Ni量‧Si量即可。The bicrystal-annealed twin crystal in the present invention is a twin crystal formed by recrystallization due to annealing after rolling. The frequency of twin crystal generation is related to the stacking fault energy. If the stacking energy is low, the twin crystal frequency generated during annealing will rise. If the stacking energy is high, the frequency will decrease. On the other hand, the stacking energy decreases as the amount of solid solution Ni‧Si is increased (correctly, the amount of solid solution Si is increased). Therefore, in order to increase the bimorphic interface frequency, the stacking energy can be lowered before the final recrystallization annealing (corresponding to the solution treatment in the present invention), and the amount of solid solution Ni ‧ Si can be increased for this purpose.

然而,於先前之卡遜合金之製造方法中,Ni及Si之固溶通常於溶體化處理時進行,而就於所需以上的高溫下進行熱壓延之處理而言,除成本增加以外,熱壓延時龜裂之危險亦會增加,故不進行。又,亦有熱壓延時兼具溶體化處理之製造方法,但即便於相當於溶體化處理之退火後進行熱壓延,亦無法使鑄造時所產生之Ni-Si結晶物完全固溶,無法充分降低疊差能。結果,利用先前方法獲得之雙晶界面頻率為12%左右。另一方面,於本發明中,藉由提高鑄造時之冷卻速度來減少Ni-Si結晶物之個數及粒徑,此外,於熱壓延步驟中不產生龜裂之限度內採用高溫長時間之退火條件,對材料進行冷卻,由此使固溶Ni量‧Si量高於先前方法,從而獲得所需之雙晶界面頻率。However, in the conventional method for producing a Carson alloy, the solid solution of Ni and Si is usually carried out at the time of the solution treatment, and in addition to the increase in cost, the heat-calendering treatment is performed at a temperature higher than necessary. The risk of cracking during hot pressing will also increase, so it will not be carried out. Further, there is a production method in which the hot press delay has a solution treatment, but even if it is subjected to hot rolling after annealing corresponding to the solution treatment, the Ni-Si crystal formed at the time of casting cannot be completely dissolved. Can not fully reduce the stacking energy. As a result, the bimorphic interface frequency obtained by the prior method was about 12%. On the other hand, in the present invention, the number and particle diameter of the Ni-Si crystals are reduced by increasing the cooling rate at the time of casting, and the high temperature is used for a long time without causing cracks in the hot rolling step. The annealing conditions are used to cool the material, thereby making the amount of solid solution Ni ‧ Si higher than the previous method, thereby obtaining the desired twin interface frequency.

[製造方法][Production method]

本發明之卡遜合金係於「熔解、鑄造→熱壓延→平面切削」後,以組合有溶體化處理、冷壓延以及時效處理之一般性製造製程來製造,亦有於最終冷壓延後進行去應力退火之情形或熱壓延時兼具溶體化處理之情形。因退火雙晶係隨著溶體化處理時之再結晶而產生,故為了達成雙晶界面之頻率為15%以上且60%以下,可於下述範圍內之條件下進行上述鑄造至熱壓延為止之處理,於最終之再結晶退火,即於溶體化處理之前預先使Ni及Si充分固溶。The Carson alloy of the present invention is manufactured by a general manufacturing process in which a solution treatment, a cold rolling, and an aging treatment are combined, after "melting, casting, hot rolling, plane cutting", and also after final cold rolling. The case of stress relief annealing or the case where the hot press delay is combined with the solution treatment. Since the annealing twin crystal system is formed by recrystallization during the solution treatment, in order to achieve a frequency of the twin crystal interface of 15% or more and 60% or less, the above casting to hot pressing can be carried out under the following conditions. The treatment is continued until the final recrystallization annealing, that is, the Ni and Si are sufficiently solid-solved before the solution treatment.

設鑄造時之鑄錠(ingot)冷卻速度為300~500℃/min,於鑄造冷卻時抑制粗大Ni-Si粒子之結晶。鑄錠冷卻速度超過500℃/min之速度就費用方面而言並不實用。接著,於加熱溫度940~1000℃、較佳為950~980℃以加熱時間3~6h進行退火,使殘留於鑄錠上之Ni-Si粒子固溶後,進行熱壓延。若加熱溫度小於940℃或小於3小時,則所殘留之Ni-Si粒子之固溶會不充分。另一方面,於超過熱壓延時之1000℃之高溫下之退火會增加熱壓延龜裂之危險。超過6小時之退火於上述溫度區域中,成為針對所需效果而為過剩之退火,就費用方面而言並不理想。設熱壓延結束時之材料溫度為650℃以上。若小於650℃,則熱壓延過程中析出之Ni2 Si量會增加,而無法確保充分之固溶Ni量‧Si量,故雙晶界面頻率會下降。The ingot cooling rate at the time of casting is set to 300 to 500 ° C / min, and the crystallization of coarse Ni-Si particles is suppressed during casting cooling. The speed at which the ingot cooling rate exceeds 500 ° C / min is not practical in terms of cost. Next, annealing is performed at a heating temperature of 940 to 1000 ° C, preferably 950 to 980 ° C for 3 to 6 hours, and the Ni-Si particles remaining on the ingot are solid-solved, followed by hot rolling. If the heating temperature is less than 940 ° C or less than 3 hours, the solid solution of the remaining Ni-Si particles may be insufficient. On the other hand, annealing at a high temperature exceeding 1000 ° C of the hot pressing delay increases the risk of hot rolling cracking. Annealing in the above temperature region for more than 6 hours is an excessive annealing for the desired effect, which is not preferable in terms of cost. The material temperature at the end of the hot rolling is set to be 650 ° C or higher. If it is less than 650 ° C, the amount of Ni 2 Si precipitated during the hot rolling process increases, and the amount of solid solution Ni amount ‧ Si cannot be ensured, so the twin interface frequency is lowered.

於平面切削後,實施加工度為85%以上之冷壓延,在700~820℃進行5sec~30min之溶體化處理(於此情形係成為最終之再結晶退火)之後,在350~550℃進行2~30h之時效處理。此外,以加工度5%~50%進行冷壓延。After planar cutting, cold rolling is performed at a working degree of 85% or more, and after 5 to 30 minutes of dissolution treatment at 700 to 820 ° C (in this case, final recrystallization annealing), the temperature is 350 to 550 ° C. Aging treatment for 2 to 30 hours. Further, cold rolling is performed at a working degree of 5% to 50%.

[實施例1][Example 1]

(試樣之製造)(Manufacture of sample)

熔解電解銅,並將既定量之添加元素投入到大氣熔解爐中,攪拌熔液。其後,在澆鑄溫度1250℃,向鑄模注入上述熔液,從而獲得鑄錠。藉由改變鑄模之水冷條件,可將鑄造時之鑄錠冷卻速度調整為表中之條件。鑄造時之鑄錠冷卻速度係待熔液凝固之後,鑄錠溫度自1100℃降至500℃為止之平均冷卻速度(℃/min)。接著,對該鑄錠,以下述順序進行加工、熱處理,從而獲得板厚為0.25mm之試樣。The electrolytic copper is melted, and a predetermined amount of the added element is put into an atmospheric melting furnace, and the molten metal is stirred. Thereafter, the melt was poured into the mold at a casting temperature of 1,250 ° C to obtain an ingot. By changing the water cooling conditions of the mold, the cooling rate of the ingot during casting can be adjusted to the conditions in the table. The ingot cooling rate at the time of casting is the average cooling rate (° C/min) until the ingot temperature is lowered from 1100 ° C to 500 ° C after the solid solution is solidified. Next, the ingot was processed and heat-treated in the following order to obtain a sample having a thickness of 0.25 mm.

(1)對鑄錠,於表中之條件下進行退火、熱壓延,將板厚加工成既定厚度之後,進行水冷。(1) The ingot is annealed and hot rolled under the conditions in the table, and the plate thickness is processed to a predetermined thickness, and then water-cooled.

(2)利用平面切削而除去表層之氧化銹皮。(2) The rust scale of the surface layer is removed by planar cutting.

(3)實施冷壓延,直至板厚達到0.3mm為止。(3) Perform cold rolling until the sheet thickness reaches 0.3 mm.

(4)在表中之溶體化溫度下實施1分鐘之溶體化處理。(4) The solution treatment was carried out for 1 minute at the solution temperature in the table.

(5)在450℃×10h之條件下實施時效處理。(5) The aging treatment was carried out under the conditions of 450 ° C × 10 h.

(6)實施冷壓延,直至時效材達到0.25mm為止。(6) Perform cold rolling until the aging material reaches 0.25 mm.

對上述材料,依據下述基準進行關於雙晶界面之EBSP測定,實施拉伸試驗及W彎曲試驗。For the above materials, EBSP measurement on the twin crystal interface was carried out according to the following criteria, and a tensile test and a W bending test were carried out.

[雙晶界面][Double crystal interface]

作為求出雙晶界面之比例之方法,係使用利用場致發射掃描電子顯微鏡(Field Emission Scanning Electron Microscope,FESEM)之電子背向散射圖案(Electron Back Scattering Pattern,EBSP)法。於利用本方法分析晶體方位之後,求出相鄰晶體方位間之方位差,從而確定晶界特性分布。設觀察倍率為1000倍,並設觀察視野之合計為2mm2 。規則晶界係使用Σ值來表示,雙晶界面相當於Σ3規則晶界。雙晶界面之比例(%)可由(規則晶界Σ3之長度總和)/(晶界之長度總和)×100來計算。另外,式中之晶界係指相鄰晶粒間之方位差為15°以上之邊界,不包括低角度晶界或亞晶界。As a method of determining the ratio of the twin crystal interface, an Electron Back Scattering Pattern (EBSP) method using a Field Emission Scanning Electron Microscope (FESEM) was used. After analyzing the crystal orientation by the method, the azimuth difference between adjacent crystal orientations is determined to determine the grain boundary characteristic distribution. The observation magnification was set to 1000 times, and the total of the observation fields was set to 2 mm 2 . The regular grain boundary is represented by a Σ value, and the twin crystal interface is equivalent to the Σ3 regular grain boundary. The ratio (%) of the twin crystal interface can be calculated from (the sum of the lengths of the regular grain boundaries Σ3) / (the sum of the lengths of the grain boundaries) × 100. In addition, the grain boundary in the formula means that the difference in orientation between adjacent crystal grains is 15° or more, and does not include a low-angle grain boundary or a subgrain boundary.

[拉伸強度][Tensile Strength]

對各銅合金板,沿著與壓延方向平行之方向進行拉伸試驗,並依據JIS Z2241來求出拉伸強度。於下述實施例中,所謂高強度,就合金A而言,係指拉伸強度為700MPa以上,就合金B而言,係指拉伸強度為650MPa以上,且就合金C而言,係指拉伸強度為600MPa以上。Each copper alloy sheet was subjected to a tensile test in a direction parallel to the rolling direction, and tensile strength was determined in accordance with JIS Z2241. In the following examples, the high strength means that the tensile strength is 700 MPa or more in the case of alloy A, and the tensile strength is 650 MPa or more in the case of alloy B, and in the case of alloy C, The tensile strength is 600 MPa or more.

[彎曲龜裂][bending crack]

使彎曲軸平行於壓延方向,選取寬度10mm×長度30mm之帶狀試驗片。進行該試驗片之W彎曲試驗(JIS H3130),將不產生龜裂之最小彎曲半徑設為MBR(Minimum Bend Radius),並根據與板厚t(mm)之比MBR/t來進行評價。關於合金A,於Bad way(B.W.)方向之MBR/t為1以下之情形時,將彎曲加工性之龜裂評價為良好(○),而除此以外之情形判斷為不良(×)。關於合金B及C,於MBR/t為0.5以下之情形時,判定彎曲加工性為良好。A strip-shaped test piece having a width of 10 mm and a length of 30 mm was selected so that the bending axis was parallel to the rolling direction. The W bending test (JIS H3130) of the test piece was carried out, and the minimum bending radius at which no crack occurred was defined as MBR (Minimum Bend Radius), and evaluated based on the ratio MBR/t to the thickness t (mm). When the MBR/t in the direction of the Bad way (B.W.) was 1 or less, the crack of the bending workability was evaluated as good (○), and the other cases were judged to be defective (×). Regarding the alloys B and C, when the MBR/t is 0.5 or less, it is judged that the bending workability is good.

[彎曲褶皺][bending folds]

於上述W彎曲試驗中,對以MBR進行彎曲加工之試驗片之彎曲凸部表面上觀察到的褶皺之掃描電子顯微鏡(Scanning Electron Microscopy,SEM)影像進行拍攝。於照片上測定彎曲褶皺之寬度,從而求出試驗片內之最大彎曲褶皺之寬度。針對各待測材料,對三個試驗片進行測定,將平均值作為彎曲褶皺之寬度。於B.W.方向之彎曲褶皺之寬度為30μm以下之情形時,彎曲加工性之褶皺評價為良好(○),若超過30μm,則判斷為不良(×)。另外,表中「-」表示無法評價。In the W bending test described above, a scanning electron microscope (SEM) image of the wrinkles observed on the surface of the curved convex portion of the test piece subjected to bending by MBR was imaged. The width of the curved pleats was measured on the photograph to determine the width of the largest curved pleats in the test piece. Three test pieces were measured for each material to be tested, and the average value was taken as the width of the curved pleats. When the width of the curved pleats in the B.W. direction is 30 μm or less, the wrinkle of the bending workability is evaluated as good (○), and when it exceeds 30 μm, it is judged to be defective (×). In addition, the "-" in the table indicates that it cannot be evaluated.

將本發明之Ni-Si系銅合金A(Cu-2% Ni-0.5% Si-0.1% Mg)之實施例示於表1。Examples of the Ni-Si-based copper alloy A (Cu-2% Ni-0.5% Si-0.1% Mg) of the present invention are shown in Table 1.

將本發明之Ni-Si系銅合金B(Cu-1.6% Ni-0.4% Si-0.4% Sn-0.5% Zn)之實施例示於表2。Examples of the Ni-Si-based copper alloy B (Cu-1.6% Ni-0.4% Si-0.4% Sn-0.5% Zn) of the present invention are shown in Table 2.

將本發明之Ni-Si系銅合金C(Cu-1.6% Ni-0.4%Si)之實施例示於表3。Examples of the Ni-Si-based copper alloy C (Cu-1.6% Ni-0.4% Si) of the present invention are shown in Table 3.

於比較例1、8及15中,由於鑄造時之冷卻速度小於300℃/min,故於鑄錠中生成粗大Ni-Si粒結晶物,對母相之Ni及Si之固溶量下降,疊差能並未充分下降,故雙晶界面頻率小於15%。In Comparative Examples 1, 8 and 15, since the cooling rate at the time of casting was less than 300 ° C / min, coarse Ni-Si crystals were formed in the ingot, and the solid solution amount of Ni and Si in the mother phase was decreased. The difference in energy is not sufficiently reduced, so the double crystal interface frequency is less than 15%.

於比較例2~4、9~11及16~18中,由於熱壓延條件不滿足940℃以上且3h以上、以及結束溫度650℃以上中之任一種,故Ni-Si粒夾雜物未充分固溶,疊差能並未下降,因此雙晶界面頻率小於15%。In Comparative Examples 2 to 4, 9 to 11 and 16 to 18, since the hot rolling conditions did not satisfy any of 940 ° C or more and 3 h or more and the end temperature of 650 ° C or more, the Ni-Si grain inclusions were insufficient. Solid solution, the stacking energy does not decrease, so the double crystal interface frequency is less than 15%.

於比較例5、12及19中,由於冷加工度為85%以下,故溶體化時之再結晶不充分,雙晶界面頻率小於15%。In Comparative Examples 5, 12 and 19, since the degree of cold working was 85% or less, recrystallization at the time of solution formation was insufficient, and the twin interface frequency was less than 15%.

於比較例6、13及20中,由於溶體化溫度為700℃以下,故再結晶不充分,雙晶界面頻率小於15%,且強度亦下降。In Comparative Examples 6, 13, and 20, since the solution temperature was 700 ° C or lower, recrystallization was insufficient, the twin interface frequency was less than 15%, and the strength was also lowered.

於比較例7、14及21中,由於溶體化溫度超過820℃,故雙晶界面頻率超過60%,結晶粒徑增大,故彎曲褶皺寬度增大。In Comparative Examples 7, 14, and 21, since the solution temperature exceeded 820 ° C, the bimorphic interface frequency exceeded 60%, and the crystal grain size increased, so that the bending wrinkle width increased.

[實施例2][Embodiment 2]

(試樣之製造)(Manufacture of sample)

熔解電解銅,於大氣熔解爐中投入既定量之添加元素,以達到表4所示之所需組成,攪拌熔液。其後,在澆鑄溫度1250℃,向鑄模注入上述熔液,並將冷卻速度調整為400℃/min,從而獲得鑄錠。接著,對該鑄錠,以下述順序進行加工、熱處理,從而獲得板厚為0.25mm之試樣。The electrolytic copper was melted, and a predetermined amount of the additive element was introduced into the atmospheric melting furnace to achieve the desired composition shown in Table 4, and the molten metal was stirred. Thereafter, the melt was poured into the mold at a casting temperature of 1,250 ° C, and the cooling rate was adjusted to 400 ° C / min to obtain an ingot. Next, the ingot was processed and heat-treated in the following order to obtain a sample having a thickness of 0.25 mm.

(1)對鑄錠,在950℃退火4小時之後,以使壓延後之結束溫度達到700℃之方式實施熱壓延。(1) After the ingot was annealed at 950 ° C for 4 hours, hot rolling was performed so that the temperature after completion of rolling was 700 ° C.

(2)對表層之氧化銹皮進行平面切削,將板厚加工成5mm。(2) Plane cutting the rust scale of the surface layer and machine the thickness to 5 mm.

(3)實施冷壓延,直至板厚達到0.3mm為止。(3) Perform cold rolling until the sheet thickness reaches 0.3 mm.

(4)在750℃實施1分鐘之溶體化處理。(4) The solution treatment was carried out at 750 ° C for 1 minute.

(5)在450℃×10h之條件下實施時效處理。(5) The aging treatment was carried out under the conditions of 450 ° C × 10 h.

(6)進行冷壓延,直至時效材達到0.25mm為止。(6) Perform cold rolling until the aging material reaches 0.25 mm.

對上述材料,實施關於雙晶界面之EBSP測定、拉伸試驗、導電率及W彎曲試驗。雙晶界面頻率及W彎曲試驗之評價係以與上述實施例1相同之方式進行,拉伸強度受到組成之影響較大,故判定600MPa以上為高強度。For the above materials, an EBSP measurement, a tensile test, a conductivity, and a W bending test were performed on the twin crystal interface. The evaluation of the twin crystal interface frequency and the W bending test was carried out in the same manner as in the above Example 1, and the tensile strength was greatly affected by the composition. Therefore, it was judged that the strength was 600 MPa or more.

將結果示於表5。如表5所示,於發明例13~23中獲得所需之雙晶界面頻率,彎曲加工性良好,且強度亦良好。於比較例22中,Ni量低於規定量,雖彎曲加工性良好,但拉伸強度下降。於比較例23中,Ni量高於規定量,產生熱壓延龜裂,無法製作試樣。The results are shown in Table 5. As shown in Table 5, in the inventive examples 13 to 23, the desired twin-crystal interface frequency was obtained, the bending workability was good, and the strength was also good. In Comparative Example 22, the amount of Ni was less than a predetermined amount, and the bending workability was good, but the tensile strength was lowered. In Comparative Example 23, the amount of Ni was higher than a predetermined amount, and hot rolling cracking occurred, and a sample could not be produced.

Claims (4)

一種Cu-Ni-Si系合金,其含有:1.0~4.0質量%之Ni、相對於Ni之質量百分比濃度為1/6~1/4之濃度之Si,且剩餘部分由Cu及不可避免之雜質所構成;而利用EBSP測定進行集合組織觀察之結果,總晶界中之雙晶界面(Σ3邊界)之頻率控制為15%以上且60%以下。A Cu-Ni-Si alloy containing: 1.0 to 4.0% by mass of Ni, a concentration of Si of 1/6 to 1/4 with respect to a mass percentage of Ni, and the balance being Cu and inevitable impurities As a result of the observation of the aggregate structure by EBSP measurement, the frequency of the twin crystal interface (Σ3 boundary) in the total grain boundary is controlled to be 15% or more and 60% or less. 如申請專利範圍第1項之Cu-Ni-Si系合金,其進一步含有0.2質量%以下之Mg。The Cu-Ni-Si alloy according to the first aspect of the invention is further contained in an amount of 0.2% by mass or less of Mg. 如申請專利範圍第1項之Cu-Ni-Si系合金,其進一步含有0.2~1質量%之Sn、及0.2~1質量%之Zn。The Cu-Ni-Si alloy according to the first aspect of the patent application further contains 0.2 to 1% by mass of Sn and 0.2 to 1% by mass of Zn. 如申請專利範圍第1項之Cu-Ni-Si系合金,其進一步含有1~1.5質量%之Co、及0.05~0.2質量%之Cr。The Cu-Ni-Si alloy according to the first aspect of the patent application further contains 1 to 1.5% by mass of Co and 0.05 to 0.2% by mass of Cr.
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