TWI427746B - 包含吸光黏合劑之積體電路 - Google Patents
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Description
本發明係關於一種結構,其包含佈置於一基板上之積體電路。本發明更係關於一種器件,例如一包含該結構之顯示器。本發明還係關於一種電子裝置,其包含具有該結構之器件。
將晶片佈置於基板之上的結構可廣泛應用於電子器件中。具體而言,半導體積體電路可廣泛用於電子顯示器領域。對於晶片,可以使用覆晶積體電路。利用隆起焊墊可以在型樣化於基板上之導線與晶片之間形成適當電氣連接。結果,在晶片與基板之間形成間隙,使該晶片面向該基板的一表面未與該基板表面接觸。通常,這一間隙填充有黏合膠或底部填充膠,這些材料可用於重新分配在晶片與基板之間產生的機械與熱機械應力,還可以為晶片之凸點與基板之間提供電氣接觸。
在積體電路之技術領域中,意識到晶片材料可能對環境光線敏感,從而有必要採取措施以保護晶片免受環境光線影響。由美國專利案第2002/0196398號可以知曉某一晶片的具體實施例,該晶片包含用於該保護積體電路受環境光線影響的構件。在此特定具體實施例中,在基板與晶片之間提供一完全覆蓋晶片積體電路的遮蔽層。該習知遮蔽層包括一耐火金屬層及一阻障層,其藉由一黏合劑黏著至基板。該習知耐火金屬層被封裝於阻障層中。該耐火金屬層被用於將環境光線散射回一光源。或者,可以使用一非反射吸光材料,此種材料較佳地擁有良好導熱特性。
在該積體電路之一替代具體實施例中(由美國專利案第6,249,044號知曉),在用於將晶片電氣耦接至基板的該等凸塊之間提供一吸光層。在此具體實施例中,未使用底部填充膠,故晶片與基板之間的間隙保持為空。該吸光層被型樣化,以形
成一部分適當凸塊下層。
習知積體電路之一缺陷係必須採取複雜步驟以便為晶片啟用光線保護。為型樣化該光線遮蔽層所需要之其他處理步驟,可能會對包含此種積體電路之顯示器的良率產生惡化影響。此外,附加處理成本使製造價格增加。
本發明之一目的係提供一種結構,特別是一種積體電路,其包含佈置在一基板之上的晶片,其中採用一種簡單而節省成本之方式消除環境光線對晶片的不利影響。
為此,根據本發明之結構包括:一基板;一晶片,其藉由黏著劑接合至該基板,其中該黏著劑包括吸光及/或反光顆粒,用於保護該晶片不受環境光線影響。
本發明之技術方法係基於以下理解,藉由將遮蔽保持功能與用於將晶片附接至基板之接合膠整合在一起,可以在接合操作期間自動佈置一光保護器,從而不需要額外處理步驟。採用這一方式,可以為晶片提供一種簡單而節省成本之光保護。當使用一凸塊將晶片佈置於該基板上時,在晶片與基板之間所形成之間隙內放置晶片鍵合用黏合劑,例如,一種包含吸光及/或反射光顆粒之適當膠。
較佳地,為能夠有效吸收光線,該晶片鍵合用黏合劑中吸光及/或反光顆粒之濃度以體積比計為至少包含50%之顆粒。應瞭解,該等反光顆粒可包括散光顆粒。該等吸光顆粒可包括碳黑顆粒或任意其他適當材料。因此,不必在接合之後添加附加光遮蔽層,接合膠本身即可用作保護其他層之光遮蔽層。該等吸光顆粒之大小較佳地小於構成該接合膠之導電顆粒。如此可防止基板型樣與晶片凸塊之間的電氣接觸惡化。因為該黏合層沿一晶片表面之厚度可與該凸塊厚度處於相同量級,使該黏
合層處於10-30微米範圍,較佳地大約為20微米,吸光顆粒及/或反光顆粒之直徑可以為數微米,較佳地小於1微米,更較佳地小於100奈米,例如,奈米顆粒。以實例說明之,藉由填充體積比佔黏合劑50%之吸光顆粒,例如20奈米碳黑顆粒,環境光線之傳輸大約是未添加吸光顆粒時之初始值的10%。應瞭解,適當顆粒大小之選擇以及填充有吸光及/或反光顆粒之黏合劑之體積比選擇,為本技術領域之習知技藝,此等選擇取決於所需光保護位準。
根據本發明之顯示器包含符合上述內容之結構。在特定具體實施例中,該顯示器可係反光的或上發光的。在此例中,該基板可能對環境光線不透明,可在大體位於該晶片側面之區域佈置包含吸光及/或反光顆粒之接合膠。如此有一優點:僅晶片側面之較小區域必須填充吸光黏合劑,可進一步降低製造成本。對於如此佈置,上遮光罩可能適於防止環境光線從晶片之上表面影響該晶片。應瞭解,根據本發明之顯示器可係關於一剛性或撓性電子顯示器。
根據本發明之電子裝置包括參考上文所描述之顯示器。
下面將參考圖式更詳細地討論本發明之此等及其他態樣,在該等圖式中,相同元件符號表示相同項目。
圖1表示該技術領域中一習知結構之具體實施例的示意圖。該結構10(可係一顯示器之一部分)包括一其上安裝一晶片6之基板2。晶片6之電氣連接由凸塊4a及4b提供。藉由一適當膠3將晶片6附接至基板2。該膠用於填充晶片6之下表面與基板2之上表面之間的間隙(未示出)。由於該晶片對於環境光線敏感,藉由應用吸收層5a及5b覆蓋該積體電路10之前、後表面,可以保護該積體電路10,使其免受環境光線影響。由於該等吸收層5a、5b,環境光線7不能穿透晶片6。如前文之解釋,此種設置係不利的,因為遮光方法只能在處理
流之高階階段實現,即針對已經具有很高價值之半導體實現。附加處理步驟可能使良率損失增加。
圖2表示根據本發明之積體電路之一具體實施例的示意圖。根據本發明之結構20解決了先前技術中存在之問題,此係因為該遮光功能被整合於該晶片鍵合用黏合劑中。應瞭解,該結構20係關於本技術領域所習知之適當晶片或覆晶。該結構20可包括一基板12,使用一包含吸光及/或反光顆粒之適當黏合劑(未示出)將一晶片或一覆晶16附接至該基板12上。利用凸塊14a、14b實現至該晶片16之電氣連接,其厚度決定該晶片16與該基板12之間間隙13a、13b、13c的厚度。為防止環境光線對晶片16有影響,用於將晶片16黏接至該基板之黏合劑包含吸光及/或反光顆粒。該黏合劑可用於填充該晶片16與該基板12之間的所有間隙13a、13b、13c。應瞭解,該等吸光及/或反光顆粒之選擇,填充有吸光及/或反光顆粒之黏合劑之體積比之選擇,以及吸光及/或反光顆粒大小之選擇,由一所需實際光線攔截能力決定。還應理解,將由該黏合劑填充之間隙體積亦會影響實際光線攔截能力。全部或部分填充皆有可能。由於該黏合劑亦具有光線攔截功能,所以積體電路之處理步驟得以簡化,從而使處理成本降低,且因為某些輔助步驟所導致之晶片損壞亦減少,此等輔助步驟係關於提供吸光及/或反光構件或附加層。為使晶片免受環境光線之影響,仍然需要上遮光罩23。
圖3表示根據本發明之積體電路之另一具體實施例的示意圖。該積體電路30可包括一可以吸光之基板22。在此情況下,間隙13b可以保持為空,因為不需要防護晶片16使其免受下方環境光線之影響。在此組態中,因此,在間隙13a與13c中提供吸光黏合劑就足以保護晶片,使其免受周邊環境光線之影響。此組態可用於反射或上發光顯示器中。為使晶片免受環境光線之影響,仍然需要上遮光罩23。
圖4表示根據本發明之電子器件之一具體實施例的示意
圖。該電子裝置41包括一外殼42及一可收回、特別是可封裝之顯示器45,其較佳地佈置在一硬蓋42a之上。該硬蓋42a被安排為與顯示器45一起環繞外殼42盤繞至位置41a。該硬蓋42a包括該邊緣構件43,該邊緣構件43具有一硬區域43a與撓性區域44a、44b,撓性區域44a、44b與該硬蓋42a之鉸鏈46a、46b一起協作。當該顯示器45被收回至環繞該外殼42之該位置時,該顯示器45之表面可鄰接該外殼42。顯示器45之功能係基於該等積體電路,其包括一基板、由晶片鍵合用黏合劑接合至該基板之晶片,其中該晶片鍵合用黏合劑包括吸光及/或反光顆粒,用於保護該晶片免受環境光線影響,如參考前文所做之描述。應瞭解包括該撓性顯示器之電子裝置亦可被佈置為將該撓性顯示器儲存於圍繞一適當輥子滾動之該電子裝置之一外殼內。可滾動電子顯示器為本技術領域所習知,它們亦係基於積體電路。根據本發明,此等積體電路具有一晶片黏合劑,其具有光線攔截功能。還應瞭解,根據本發明之電子裝置亦可包括基於積體電路之剛性顯示器,其中各別晶片係使用一光線攔截黏合劑接合至該基板。
應瞭解,儘管為清晰起見,對根據本發明結構之特定具體實施例進行分離討論,但參考獨立圖式所討論之相容元件亦可進行互換。儘管上文已討論特定具體實施例,但應瞭解本發明可藉由不同於上面所介紹之方式實現。上述說明旨在進行說明而非限制。因此,熟習此項技術者應瞭解,可以在不背離以下所列申請專利範圍之情況下,對上文所描述之本發明進行修改。
2‧‧‧基板
3‧‧‧膠
4a‧‧‧凸塊
4b‧‧‧凸塊
5a‧‧‧吸收層
5b‧‧‧吸收層
6‧‧‧晶片
7‧‧‧環境光線
10‧‧‧結構
12‧‧‧基板
13a‧‧‧間隙
13b‧‧‧間隙
13c‧‧‧間隙
14a‧‧‧凸塊
14b‧‧‧凸塊
16‧‧‧晶片
20‧‧‧結構
22‧‧‧基板
23‧‧‧遮蔽
30‧‧‧積體電路
41‧‧‧電子裝置
41a‧‧‧位置
42‧‧‧外殼
42a‧‧‧硬蓋
43‧‧‧邊緣構件
43a‧‧‧硬區域
44a‧‧‧撓性區域
44b‧‧‧撓性區域
45‧‧‧顯示器
46a‧‧‧鉸鏈
46b‧‧‧鉸鏈
圖1 表示該技術領域中一習知積體電路之具體實施例的示意圖。
圖2 表示根據本發明之積體電路之一具體實施例的示意圖。
圖3 表示根據本發明之積體電路之另一具體實施例的示意圖。
圖4 表示根據本發明之電子器件之一具體實施例的示意圖。
7‧‧‧環境光線
12‧‧‧基板
13a‧‧‧間隙
13b‧‧‧間隙
13c‧‧‧間隙
14a‧‧‧凸塊
14b‧‧‧凸塊
16‧‧‧晶片
20‧‧‧結構
Claims (9)
- 一種積體電路結構,其包括:一基板;一晶片,其藉由晶片鍵合用黏著劑接合至該基板,其中該晶片鍵合用黏著劑包括吸光及/或反光顆粒,用於保護該晶片不受環境光線影響,其中使用至少一凸塊將該晶片佈置於該基板上,包括吸光顆粒之該晶片鍵合用黏合劑被佈置於該晶片、該凸塊與該基板之間形成之間隙內。
- 如申請專利範圍第1項所述之積體電路結構,其中該晶片鍵合用黏合劑被佈置為一層,其厚度介於10-30微米之間。
- 如上述申請專利範圍第1項所述之積體電路結構,其中該吸光顆粒在該晶片鍵合用黏合劑中之濃度以體積比計為至少50%。
- 如上述申請專利範圍第1項所述之積體電路結構,其中該等吸光顆粒包括碳黑顆粒。
- 一種顯示器,其包含如上述申請專利範圍任一項所述之積體電路結構。
- 如申請專利範圍第5項所述之顯示器,其中該顯示器係反射性的或者上發光的,包含吸光顆粒之該接合膠被佈置在該晶片側面之區域,該基板對環境光線不透明。
- 如申請專利範圍第5項所述之顯示器,進一步包括一上遮光罩。
- 如申請專利範圍第5至7項中任一項所述之顯示器,其中該顯示器係撓性的。
- 一種電子裝置,其包括如申請專利範圍第5項所述之一顯示器。
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EP (1) | EP2304782A1 (zh) |
CN (1) | CN102113105B (zh) |
TW (1) | TWI427746B (zh) |
WO (1) | WO2009154464A1 (zh) |
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CN103718288B (zh) * | 2012-03-14 | 2016-08-17 | 日本特殊陶业株式会社 | 陶瓷基板及其制造方法 |
TWI624083B (zh) * | 2014-09-02 | 2018-05-11 | 億光電子工業股份有限公司 | 發光元件及顯示裝置 |
TWI572062B (zh) * | 2014-09-02 | 2017-02-21 | 億光電子工業股份有限公司 | 發光元件及顯示裝置 |
EP3419050A1 (en) * | 2017-06-23 | 2018-12-26 | ams International AG | Radiation-hardened package for an electronic device and method of producing a radiation-hardened package |
JP7206489B2 (ja) * | 2019-03-07 | 2023-01-18 | ミツミ電機株式会社 | 光学モジュール及び光学式エンコーダ |
KR102336286B1 (ko) * | 2020-06-30 | 2021-12-08 | 한국전자기술연구원 | 반도체칩 실장방법 |
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EP0994171A2 (en) * | 1998-10-12 | 2000-04-19 | Sony Chemicals Corporation | Light-blocking anisotropically electroconductive adhesive film, and liquid crystal display device |
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JP3298110B2 (ja) * | 1991-04-03 | 2002-07-02 | セイコーエプソン株式会社 | 異方性導電接着剤及びその接合方法 |
US5685939A (en) * | 1995-03-10 | 1997-11-11 | Minnesota Mining And Manufacturing Company | Process for making a Z-axis adhesive and establishing electrical interconnection therewith |
JPH10319860A (ja) * | 1997-05-23 | 1998-12-04 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
WO2000002245A1 (fr) * | 1998-07-01 | 2000-01-13 | Seiko Epson Corporation | Dispositif a semi-conducteur, procede de fabrication associe, carte imprimee et dispositif electronique |
TWI229929B (en) * | 2001-01-29 | 2005-03-21 | Ube Industries | Underfill material for COF mounting and electronic components |
US20050247916A1 (en) * | 2004-05-06 | 2005-11-10 | Mccormick Demetrius | Compositions for use in electronics devices |
US7666704B2 (en) * | 2005-04-22 | 2010-02-23 | Panasonic Corporation | Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device |
CN101681038B (zh) * | 2006-10-19 | 2011-10-19 | 创造者科技有限公司 | 可卷式或可绕式显示装置的顺光照明 |
US7605477B2 (en) * | 2007-01-25 | 2009-10-20 | Raytheon Company | Stacked integrated circuit assembly |
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2009
- 2009-06-19 EP EP09766882A patent/EP2304782A1/en not_active Withdrawn
- 2009-06-19 CN CN200980130171.3A patent/CN102113105B/zh not_active Expired - Fee Related
- 2009-06-19 WO PCT/NL2009/050366 patent/WO2009154464A1/en active Application Filing
- 2009-06-19 US US12/999,938 patent/US20110147902A1/en not_active Abandoned
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EP0994171A2 (en) * | 1998-10-12 | 2000-04-19 | Sony Chemicals Corporation | Light-blocking anisotropically electroconductive adhesive film, and liquid crystal display device |
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CN102113105B (zh) | 2015-08-19 |
CN102113105A (zh) | 2011-06-29 |
EP2304782A1 (en) | 2011-04-06 |
WO2009154464A1 (en) | 2009-12-23 |
US20110147902A1 (en) | 2011-06-23 |
TW201017833A (en) | 2010-05-01 |
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