TWI419384B - Packaging structure of light emitted diode - Google Patents

Packaging structure of light emitted diode Download PDF

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Publication number
TWI419384B
TWI419384B TW100110075A TW100110075A TWI419384B TW I419384 B TWI419384 B TW I419384B TW 100110075 A TW100110075 A TW 100110075A TW 100110075 A TW100110075 A TW 100110075A TW I419384 B TWI419384 B TW I419384B
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TW
Taiwan
Prior art keywords
emitting diode
conductive
light
groove
package structure
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TW100110075A
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Chinese (zh)
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TW201240171A (en
Inventor
Peisong Tsai
Tzupu Lin
Jian Chin Liang
Chun Wei Wang
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Lextar Electronics Corp
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Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW100110075A priority Critical patent/TWI419384B/en
Priority to CN201110109310.3A priority patent/CN102694104B/en
Publication of TW201240171A publication Critical patent/TW201240171A/en
Application granted granted Critical
Publication of TWI419384B publication Critical patent/TWI419384B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Description

發光二極體封裝結構Light emitting diode package structure

本發明主要關於一種封裝結構,尤指一種發光二極體封裝結構。The invention relates mainly to a package structure, in particular to a light-emitting diode package structure.

由於發光二極體具有低耗能、壽命長、體積小等優點,現今已廣泛的應用於各式的照明中。請參閱第1圖,為習知之發光二極體封裝結構1之立體圖。發光二極體封裝結構1包括一絕緣本體10、一導熱元件20、一電極30、與一發光二極體40。Since the light-emitting diode has the advantages of low energy consumption, long life, small volume, and the like, it has been widely used in various types of illumination. Please refer to FIG. 1 , which is a perspective view of a conventional LED package structure 1 . The LED package structure 1 includes an insulative housing 10, a heat conducting component 20, an electrode 30, and a light emitting diode 40.

絕緣本體10設有一發光面11與一焊接面12。於發光面11上凹設一反射槽13。導熱元件20與電極30設置於絕緣本體10,並分別露出於反射槽13與焊接面12。發光二極體40設置於電極30並且位於反射槽13內。發光二極體40所產生之光線會經由反射槽13反射,藉以增加發光二極體40之整體亮度。The insulative housing 10 is provided with a light emitting surface 11 and a soldering surface 12. A reflection groove 13 is recessed on the light-emitting surface 11 . The heat conducting element 20 and the electrode 30 are disposed on the insulative housing 10 and exposed to the reflecting groove 13 and the soldering surface 12, respectively. The light emitting diode 40 is disposed on the electrode 30 and located in the reflective groove 13. The light generated by the light-emitting diode 40 is reflected by the reflection groove 13 to increase the overall brightness of the light-emitting diode 40.

前述之絕緣本體10的顏色一般為白色,並由塑膠材質所構成,例如聚邻苯二甲酰胺(Polyphthalamide,PPA)塑膠。絕緣本體10於長時間的光線照射下,顏色會逐漸變黑,進而降低了反射槽13之反射率。因此發光二極體40之整體亮度會逐漸降低。The foregoing insulating body 10 is generally white in color and is made of a plastic material such as polyphthalamide (PPA) plastic. When the insulating body 10 is irradiated with light for a long time, the color gradually becomes black, thereby reducing the reflectance of the reflecting groove 13. Therefore, the overall brightness of the light-emitting diode 40 is gradually lowered.

此外,發光二極體40所產生之熱會經由導熱元件20傳導至焊接面12。然而,導熱元件20於反射槽13與焊接面12之間的部份均埋入於絕緣本體10中,因此,前述埋入於絕緣本體10中的部份不易散熱,進而影響了發光二極體封裝結構1之散熱效率。Furthermore, the heat generated by the LEDs 40 is conducted to the soldering surface 12 via the thermally conductive element 20. However, the portion of the heat conducting element 20 between the reflective groove 13 and the soldering surface 12 is buried in the insulating body 10. Therefore, the portion buried in the insulating body 10 is not easily dissipated, thereby affecting the light emitting diode. The heat dissipation efficiency of the package structure 1.

為了解決上述習知技術之缺失,本發明之目的為提供一種發光二極體封裝結構,其於絕緣本體之容置槽之側壁設置一金屬材質之反射部。發光二極體所產生之熱可直接經由此反射部傳導,以提高散熱效率。並且發光二極體所產生之光可經由反射部反射,藉以維持容置槽之反射率。In order to solve the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a light-emitting diode package structure, which is provided with a metal reflective portion on the sidewall of the receiving groove of the insulating body. The heat generated by the light-emitting diode can be directly conducted through the reflective portion to improve heat dissipation efficiency. And the light generated by the light emitting diode can be reflected by the reflecting portion, thereby maintaining the reflectivity of the receiving groove.

為了達到上述之目的,本發明係提供一種發光二極體封裝結構,包括一絕緣本體、一導熱單元與一發光二極體。絕緣本體設有一發光面與一焊接面,並由發光面凹設一容置槽。導熱單元設置於絕緣本體。導熱單元包括一傳導部與一反射部。傳導部露出於容置槽之底部,反射部由金屬材質所構成並連接於傳導部,反射部貫穿容置槽之側壁並露出於焊接面。發光二極體設置於導熱單元並位於容置槽。導熱單元傳導發光二極體所產生之熱至反射部。In order to achieve the above object, the present invention provides a light emitting diode package structure including an insulating body, a heat conducting unit and a light emitting diode. The insulating body is provided with a light emitting surface and a soldering surface, and a receiving groove is recessed from the light emitting surface. The heat conducting unit is disposed on the insulating body. The heat conducting unit includes a conducting portion and a reflecting portion. The conductive portion is exposed at the bottom of the accommodating groove, and the reflecting portion is made of a metal material and connected to the conductive portion. The reflecting portion penetrates the side wall of the accommodating groove and is exposed on the welding surface. The light emitting diode is disposed on the heat conducting unit and located in the receiving groove. The heat conducting unit conducts heat generated by the light emitting diode to the reflecting portion.

綜上所述,本發明之發光二極體封裝結構藉由金屬材質之反射部取代部份塑膠材質之容置槽的側壁,以於長時間使用後,維持發光二極體封裝結構較高的亮度。另外,發光二極體所產生之熱可直接經由未被埋入絕緣本體之反射部與傳導部傳導,可縮短熱傳導之路徑,以增加導熱單元之散熱效率。In summary, the LED package structure of the present invention replaces the sidewall of the accommodating groove of a part of the plastic material by the reflecting portion of the metal material, so as to maintain the high-emitting LED package structure after a long period of use. brightness. In addition, the heat generated by the light-emitting diode can be directly transmitted through the reflective portion and the conductive portion that are not buried in the insulating body, and the heat conduction path can be shortened to increase the heat dissipation efficiency of the heat-conducting unit.

請參閱第2圖至第4圖,第2圖為本發明之發光二極體封裝結構2的立體圖,第3圖與第4圖為本發明之發光二極體封裝結構2的部份分解圖。Please refer to FIG. 2 to FIG. 4 , FIG. 2 is a perspective view of the LED package structure 2 of the present invention, and FIGS. 3 and 4 are partial exploded views of the LED package structure 2 of the present invention. .

發光二極體封裝結構2包括一絕緣本體100、一導熱單元200、一導電單元300、以及一發光二極體400。絕緣本體100可由塑膠材質所製成,例如聚邻苯二甲酰胺(Polyphthalamide,PPA)塑膠。絕緣本體100設有一發光面101、一焊接面102、二側面103、與一安裝面104,其中發光面101接鄰焊接面102與側面103,發光面101與安裝面104分別設置於絕緣本體100之兩相對側。絕緣本體100包括一反射蓋110以及一基座120。於另一實施例中,反射蓋110以及基座120為一體成型。The LED package structure 2 includes an insulative housing 100, a heat conducting unit 200, a conductive unit 300, and a light emitting diode 400. The insulative housing 100 can be made of a plastic material such as polyphthalamide (PPA) plastic. The insulative housing 100 is provided with a light emitting surface 101, a soldering surface 102, two side surfaces 103, and a mounting surface 104. The light emitting surface 101 is adjacent to the soldering surface 102 and the side surface 103. The light emitting surface 101 and the mounting surface 104 are respectively disposed on the insulating body 100. The opposite side of the two. The insulative housing 100 includes a reflective cover 110 and a base 120. In another embodiment, the reflective cover 110 and the base 120 are integrally formed.

反射蓋110設有前述之發光面101、一第一焊接面111、二第一側面112、一第一連接面113。發光面101接鄰第一焊接面111與第一側面112,發光面101與第一連接面113分別設置於反射蓋110之兩相對側。由發光面101凹設有一容置槽114,由容置槽114之底部凹設有一導熱槽115與一導電槽116,容置槽114之側壁設有一貫穿洞117與一卡合槽118,貫穿洞117貫穿第一焊接面111與第一連接面113,貫穿洞117與卡合槽118可分別設置於容置槽114之兩相對側壁,也就是說,容置槽114分別和導熱槽115、導電槽116、貫穿洞117、與卡合槽118相互連通。The reflective cover 110 is provided with the aforementioned light emitting surface 101, a first soldering surface 111, two first side surfaces 112, and a first connecting surface 113. The light emitting surface 101 is adjacent to the first soldering surface 111 and the first side surface 112. The light emitting surface 101 and the first connecting surface 113 are respectively disposed on opposite sides of the reflective cover 110. A receiving groove 114 is recessed from the light emitting surface 101. A heat conducting groove 115 and a conductive groove 116 are recessed from the bottom of the receiving groove 114. The side wall of the receiving groove 114 is provided with a through hole 117 and an engaging groove 118. The hole 117 extends through the first welding surface 111 and the first connecting surface 113. The through hole 117 and the engaging groove 118 are respectively disposed on the opposite side walls of the receiving groove 114, that is, the receiving groove 114 and the heat conducting groove 115, respectively. The conductive groove 116, the through hole 117, and the engagement groove 118 communicate with each other.

第一焊接面111設有一第一導熱開口1111與一第一導電開口1112,第一連接面113設有一第二導熱開口1131與一第二導電開口1132。第一導熱開口1111與第二導熱開口1131和導熱槽115相互連通,第一導電開口1112與第二導電開口1132和導電槽116相互連通。The first soldering surface 111 is provided with a first heat conducting opening 1111 and a first conductive opening 1112. The first connecting surface 113 is provided with a second heat conducting opening 1131 and a second conductive opening 1132. The first heat conduction opening 1111 and the second heat conduction opening 1131 and the heat conduction groove 115 communicate with each other, and the first conductive opening 1112 and the second conductive opening 1132 and the conductive groove 116 communicate with each other.

基座120設置於反射蓋110之第一連接面113,並設有一第二焊接面121、二第二側面122、一第二連接面123、與前述之安裝面104,其中第一焊接面111與第二焊接面121組合成前述之焊接面102,第一側面112與第二側面122組合成前述之側面103。第二連接面123與安裝面104分別設置於基座120之兩相對側,並與反射蓋110之第一連接面113接觸。安裝面104與第二連接面123分別接鄰第二焊接面121與第二側面122。The pedestal 120 is disposed on the first connecting surface 113 of the reflective cover 110, and is provided with a second soldering surface 121, two second side surfaces 122, a second connecting surface 123, and the foregoing mounting surface 104, wherein the first soldering surface 111 The welding surface 102 is combined with the second welding surface 121, and the first side surface 112 and the second side surface 122 are combined into the aforementioned side surface 103. The second connecting surface 123 and the mounting surface 104 are respectively disposed on opposite sides of the base 120 and are in contact with the first connecting surface 113 of the reflective cover 110. The mounting surface 104 and the second connecting surface 123 are adjacent to the second welding surface 121 and the second side surface 122, respectively.

由第二焊接面121與第二連接面123凹設一第一銲錫槽124,由第二焊接面121與第二側面122凹設二第二銲錫槽125a、125b。由安裝面104與第二焊接面121凹設一安裝槽126,其中安裝槽126與第一銲錫槽124相互連通。安裝槽126之底部設有一安裝塊1261,因此本實施例之發光二極體封裝結構2可經由安裝槽126與安裝塊1261組合於另一元件(圖未示)上。A first solder bath 124 is recessed from the second soldering surface 121 and the second connecting surface 123, and two second solder baths 125a and 125b are recessed from the second soldering surface 121 and the second side surface 122. A mounting groove 126 is recessed from the mounting surface 104 and the second soldering surface 121, wherein the mounting groove 126 and the first soldering groove 124 communicate with each other. A mounting block 1261 is disposed at the bottom of the mounting slot 126. Therefore, the LED package 2 of the present embodiment can be combined with the mounting block 1261 via another mounting member 126 on another component (not shown).

導熱單元200設置於絕緣本體100,並可由金屬材質所構成。導熱單元200包括一傳導部210、一反射部220、一卡合部230與一傳導焊接部240。傳導部210設置於基座120之第二連接面123並可沿第二連接面123延伸,傳導部210亦容置於反射蓋110之導熱槽115內。傳導部210之一端露出於容置槽114之底部以及第一銲錫槽124。反射部220連接於傳導部210之一端並容置於貫穿洞117內,反射部220貫穿容置槽114之側壁並露出於焊接面102。因此,反射部220可形成容置槽114之側壁的一部分,換句話說,以金屬材質之反射部220取代部份塑膠材質之容置槽114的側壁。The heat conduction unit 200 is disposed on the insulative housing 100 and may be made of a metal material. The heat conducting unit 200 includes a conducting portion 210, a reflecting portion 220, an engaging portion 230 and a conductive soldering portion 240. The conductive portion 210 is disposed on the second connecting surface 123 of the base 120 and extends along the second connecting surface 123. The conductive portion 210 is also received in the heat conducting slot 115 of the reflective cover 110. One end of the conductive portion 210 is exposed at the bottom of the accommodating groove 114 and the first solder bath 124. The reflecting portion 220 is connected to one end of the conducting portion 210 and received in the through hole 117 . The reflecting portion 220 penetrates the sidewall of the receiving groove 114 and is exposed on the soldering surface 102 . Therefore, the reflecting portion 220 can form a part of the side wall of the accommodating groove 114. In other words, the reflecting portion 220 of the metal material replaces the side wall of the accommodating groove 114 of the part of the plastic material.

於第2圖中可看出,反射部220之表面連接發光面101、焊接面102以及容置槽114之側壁,並且導熱單元200之反射部220不突出於發光面101、焊接面102以及容置槽114之側壁。反射部220與傳導部210露出於容置槽114之表面可包覆一反射層(可為圖示中反射部220與傳導部210的表面),此反射層可由銀等高反射性金屬所構成,反射層可以電鍍之方式設置於導熱單元200上。As shown in FIG. 2, the surface of the reflecting portion 220 is connected to the light emitting surface 101, the soldering surface 102, and the sidewall of the receiving groove 114, and the reflecting portion 220 of the heat conducting unit 200 does not protrude from the light emitting surface 101, the soldering surface 102, and the capacitor. The side wall of the groove 114 is placed. The reflective portion 220 and the surface of the conductive portion 210 exposed on the accommodating groove 114 may be covered with a reflective layer (which may be the surface of the reflective portion 220 and the conductive portion 210 in the figure). The reflective layer may be made of a highly reflective metal such as silver. The reflective layer may be disposed on the heat conducting unit 200 by electroplating.

卡合部230連接於傳導部210之一端,並相對於反射部220。卡合部230容置於卡合槽118,當反射蓋110設置於基座120時,藉由卡合部230卡合於卡合槽118可輔助固定反射蓋110。The engaging portion 230 is connected to one end of the conducting portion 210 and opposite to the reflecting portion 220. The engaging portion 230 is received in the engaging groove 118. When the reflective cover 110 is disposed on the base 120, the engaging portion 230 is engaged with the engaging groove 118 to assist in fixing the reflective cover 110.

傳導焊接部240連接於傳導部210之另一端,傳導焊接部240由傳導部210延伸後彎折,並沿第二焊接面121延伸。傳導焊接部240容置於第二銲錫槽125a內,並與第二銲錫槽125a之側壁相互間隔。由第2圖可看出,傳導焊接部240突出於第二銲錫槽125a之底部,其形狀可為一T型,傳導焊接部240之一端部241由第二焊接面121彎折至基座120之第二側面122。The conductive soldering portion 240 is connected to the other end of the conductive portion 210. The conductive soldering portion 240 is bent by the conductive portion 210 and bent along the second soldering surface 121. The conductive soldering portion 240 is housed in the second solder bath 125a and spaced apart from the sidewall of the second solder bath 125a. As can be seen from FIG. 2, the conductive soldering portion 240 protrudes from the bottom of the second solder bath 125a, and may have a T-shape. One end portion 241 of the conductive solder portion 240 is bent by the second soldering surface 121 to the pedestal 120. The second side 122.

導電單元300設置於絕緣本體100並露出於容置槽114,導電單元300貫穿絕緣本體100並露出於焊接面102。導電單元300包括一導電部310與一導電焊接部320。導電部310設置於基座120之第二連接面123並可沿第二連接面123延伸,導電部310亦容置於反射蓋110之導電槽116內,導電部310之一端露出於容置槽114之底部。The conductive unit 300 is disposed on the insulative housing 100 and exposed to the receiving slot 114 . The conductive unit 300 extends through the insulative housing 100 and is exposed to the soldering surface 102 . The conductive unit 300 includes a conductive portion 310 and a conductive solder portion 320. The conductive portion 310 is disposed on the second connecting surface 123 of the pedestal 120 and extends along the second connecting surface 123. The conductive portion 310 is also received in the conductive groove 116 of the reflective cover 110. One end of the conductive portion 310 is exposed in the receiving groove. The bottom of 114.

導電焊接部320連接於導電部310之另一端,導電焊接部320由導電部310延伸後彎折,並沿第二焊接面121延伸。導電焊接部320容置於第二銲錫槽125b內,並與第二銲錫槽125b之側壁相互間隔。由第2圖可看出,導電焊接部320突出於第二銲錫槽125b之底部,其形狀可為一T型,導電焊接部320之一端部321由第二焊接面121彎折至基座120之第二側面122。The conductive soldering portion 320 is connected to the other end of the conductive portion 310. The conductive solder portion 320 is bent by the conductive portion 310 and bent along the second soldering surface 121. The conductive soldering portion 320 is received in the second solder bath 125b and spaced apart from the sidewall of the second solder bath 125b. As can be seen from FIG. 2, the conductive soldering portion 320 protrudes from the bottom of the second solder bath 125b, and may have a T-shape. One end portion 321 of the conductive solder portion 320 is bent by the second soldering surface 121 to the pedestal 120. The second side 122.

請一併參閱第5圖,為本發明之發光二極體封裝結構2設置於一印刷電路板M1之剖視示意圖,其中發光二極體封裝結構2為依據第2圖之AA剖面所繪製。Referring to FIG. 5, a schematic diagram of a light emitting diode package structure 2 of the present invention disposed on a printed circuit board M1 is shown. The light emitting diode package structure 2 is drawn according to the AA cross section of FIG.

發光二極體400設置於導熱單元200並位於容置槽114內。發光二極體400所產生之光,可直接經由發光面101沿一發光方向D1射出,亦可經由容置槽114之側壁表面反射後再經由發光面101射出,其中發光方向D1可為發光面101之法向量,並與一參考平面P1以及一印刷電路板M1平行。於本實施例中,發光二極體400所產生之光更可照射至反射部220與卡合部230,再經由反射部220與卡合部230反射後經由發光面101射出。由於本實施例中之反射部220與卡合部230為一金屬材質,金屬材質之表面不但具有良好之反射率,並且經由光線長期照射後反射部220與卡合部230變暗之程度遠小於PPA塑膠等塑膠材質。因此,本實施例之發光二極體封裝結構2於長時間使用後之亮度可相較於習知技術於相同之使用時間下之亮度為高。The light emitting diode 400 is disposed in the heat conducting unit 200 and located in the receiving groove 114. The light generated by the light-emitting diode 400 can be directly emitted through the light-emitting surface 101 along a light-emitting direction D1, or can be reflected by the sidewall surface of the accommodating groove 114, and then emitted through the light-emitting surface 101. The light-emitting direction D1 can be a light-emitting surface. The normal vector of 101 is parallel to a reference plane P1 and a printed circuit board M1. In the present embodiment, the light generated by the light-emitting diode 400 is further irradiated to the reflection portion 220 and the engagement portion 230, and is reflected by the reflection portion 220 and the engagement portion 230, and then emitted through the light-emitting surface 101. Since the reflection portion 220 and the engaging portion 230 in the embodiment are made of a metal material, the surface of the metal material not only has a good reflectance, but also the degree of darkening of the reflection portion 220 and the engaging portion 230 after long-term illumination by light is much smaller than that. PPA plastic and other plastic materials. Therefore, the brightness of the LED package structure 2 of the present embodiment after long-term use can be higher than that of the prior art at the same usage time.

另外,發光二極體400所產生之熱經由導熱單元200之傳導部210傳導至傳導焊接部240,。發光二極體400可經由導線W1電性連接導電單元300與傳導部210,因此電力可經由導電焊接部320、導電部310、導線W1以傳導至發光二極體400,此外電力亦可經由發光二極體400、導線W1、傳導部210傳導至傳導焊接部240。In addition, heat generated by the light emitting diode 400 is conducted to the conductive solder portion 240 via the conductive portion 210 of the heat conduction unit 200. The light-emitting diode 400 can be electrically connected to the conductive unit 300 and the conductive portion 210 via the wire W1. Therefore, the power can be transmitted to the light-emitting diode 400 via the conductive solder portion 320, the conductive portion 310, and the wire W1, and the power can also be transmitted through the light-emitting diode 400. The diode 400, the wire W1, and the conductive portion 210 are conducted to the conductive solder portion 240.

發光二極體封裝結構2可經由絕緣本體100之焊接面102焊接於印刷電路板M1上。首先。可先將銲錫(圖未示)設置於印刷電路板M1上,再將反射部220、傳導焊接部240與導電焊接部320對準銲錫,並放置於銲錫上。當銲錫受到擠壓後,多餘之銲錫可流至第一銲錫槽124與第二銲錫槽125a、125b,可防止反射部220、傳導焊接部240與導電焊接部320經由銲錫彼此電性連接,進而造成短路。The LED package structure 2 can be soldered to the printed circuit board M1 via the soldering surface 102 of the insulative housing 100. First of all. Solder (not shown) may be placed on the printed circuit board M1, and the reflective portion 220, the conductive solder portion 240, and the conductive solder portion 320 may be aligned with the solder and placed on the solder. After the solder is squeezed, the excess solder can flow to the first solder bath 124 and the second solder baths 125a and 125b, thereby preventing the reflective portion 220, the conductive solder portion 240 and the conductive solder portion 320 from being electrically connected to each other via solder. Causes a short circuit.

此外,由於傳導部210露出於第一銲錫槽124,因此流入第一銲錫槽124之銲錫亦連接於傳導部210,發光二極體400所產生之熱可直接經由傳導部210未被埋入絕緣本體100之部份傳導至印刷電路板M1,如此可縮短熱傳導之路徑,減少熱阻(thermal resistance),增加導熱單元200之散熱效率。另外,發光二極體400所產生之熱亦可直接經由傳導部210傳導至反射部220,熱可直接經由未被埋入絕緣本體100之反射部220散出,亦可縮短熱傳導之路徑,減少熱阻,增加導熱單元200之散熱效率。In addition, since the conductive portion 210 is exposed to the first solder bath 124, the solder flowing into the first solder bath 124 is also connected to the conductive portion 210, and the heat generated by the light-emitting diode 400 can be directly buried without being insulated via the conductive portion 210. The portion of the body 100 is conducted to the printed circuit board M1, which shortens the path of heat conduction, reduces thermal resistance, and increases the heat dissipation efficiency of the heat conduction unit 200. In addition, the heat generated by the LEDs 400 can be directly transmitted to the reflecting portion 220 via the conducting portion 210, and the heat can be directly discharged through the reflecting portion 220 that is not buried in the insulating body 100, and the heat conduction path can be shortened and reduced. The thermal resistance increases the heat dissipation efficiency of the heat conduction unit 200.

請一併參閱第6圖,為本發明之發光二極體封裝結構2設置於一印刷電路板M1之側視示意圖。於圖中可看出,絕緣本體100大致由基座120之第二連接面123至安裝面104漸窄,此漸窄之結構可有利於當絕緣本體100從模具(圖未示)中取出時之製作過程。Please refer to FIG. 6 for a side view of the LED package structure 2 of the present invention disposed on a printed circuit board M1. As can be seen in the figure, the insulative housing 100 is substantially narrowed from the second connecting surface 123 of the base 120 to the mounting surface 104. This tapered structure can facilitate the removal of the insulative housing 100 from the mold (not shown). The production process.

於第5圖中,導熱單元200之傳導焊接部240突出於第二焊接面121,並且傳導焊接部240之表面與反射蓋110之第一焊接面111可沿參考平面P1延伸,並貼平於印刷電路板M1上,前述之印刷電路板M1平行於參考平面P1。另外,由於基座120為一漸窄之結構,因此第二焊接面121與前述之參考平面P1相互間隔,例如圖中之第二焊接面121鄰近於安裝面104之邊緣距離參考平面P1一間隔距離H1。因此,雖然基座120為一漸窄之結構,但藉由傳導焊接部240之支撐,可使光二極體封裝結構穩固地設置於印刷電路板M1上,並可使絕緣本體100之發光面101垂直於參考平面P1和印刷電路板M1。In FIG. 5, the conductive soldering portion 240 of the heat conducting unit 200 protrudes from the second soldering surface 121, and the surface of the conductive soldering portion 240 and the first soldering surface 111 of the reflective cover 110 may extend along the reference plane P1 and be flattened On the printed circuit board M1, the aforementioned printed circuit board M1 is parallel to the reference plane P1. In addition, since the susceptor 120 has a tapered structure, the second soldering surface 121 is spaced apart from the aforementioned reference plane P1. For example, the second soldering surface 121 in the drawing is spaced apart from the edge of the mounting surface 104 by a distance from the reference plane P1. Distance H1. Therefore, although the susceptor 120 has a tapered structure, the photodiode package structure can be stably disposed on the printed circuit board M1 by the support of the conductive soldering portion 240, and the light emitting surface 101 of the insulating body 100 can be made. It is perpendicular to the reference plane P1 and the printed circuit board M1.

綜上所述,本發明之發光二極體封裝結構藉由金屬材質之反射部取代部份塑膠材質之容置槽的側壁,以於長時間使用後,維持發光二極體封裝結構較高的亮度。另外,發光二極體所產生之熱可直接經由未被埋入絕緣本體之反射部與傳導部傳導,可縮短熱傳導之路徑,以增加導熱單元之散熱效率。In summary, the LED package structure of the present invention replaces the sidewall of the accommodating groove of a part of the plastic material by the reflecting portion of the metal material, so as to maintain the high-emitting LED package structure after a long period of use. brightness. In addition, the heat generated by the light-emitting diode can be directly transmitted through the reflective portion and the conductive portion that are not buried in the insulating body, and the heat conduction path can be shortened to increase the heat dissipation efficiency of the heat-conducting unit.

本發明雖以各種實施例揭露如上,然而其僅為範例參考而非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾。因此上述實施例並非用以限定本發明之範圍,本發明之保護範圍當視後附之申請專利範圍所界定者為準。The present invention has been described above with reference to various embodiments, which are intended to be illustrative only and not to limit the scope of the invention, and those skilled in the art can make a few changes without departing from the spirit and scope of the invention. With retouching. The above-described embodiments are not intended to limit the scope of the invention, and the scope of the invention is defined by the scope of the appended claims.

[習知技術][Practical Technology]

1...發光二極體封裝結構1. . . Light emitting diode package structure

10...絕緣本體10. . . Insulating body

11...發光面11. . . Luminous surface

12...焊接面12. . . Welding surface

13...反射槽13. . . Reflection slot

20...導熱元件20. . . Thermal element

30...電極30. . . electrode

40...發光二極體40. . . Light-emitting diode

[本發明][this invention]

2...發光二極體封裝結構2. . . Light emitting diode package structure

100...絕緣本體100. . . Insulating body

101...發光面101. . . Luminous surface

102...焊接面102. . . Welding surface

103...側面103. . . side

104...安裝面104. . . Mounting surface

110...反射蓋110. . . Reflective cover

111...第一焊接面111. . . First welding surface

1111...第一導熱開口1111. . . First heat conduction opening

1112...第一導電開口1112. . . First conductive opening

112...第一側面112. . . First side

113...第一連接面113. . . First connection surface

1131...第二導熱開口1131. . . Second heat conduction opening

1132...第二導電開口1132. . . Second conductive opening

114...容置槽114. . . Locating slot

115...導熱槽115. . . Thermal bath

116...導電槽116. . . Conductive slot

117...貫穿洞117. . . Through hole

118...卡合槽118. . . Engagement slot

120...基座120. . . Pedestal

121...第二焊接面121. . . Second welding surface

122...第二側面122. . . Second side

123...第二連接面123. . . Second connection surface

124...第一銲錫槽124. . . First solder bath

125a、125b...第二銲錫槽125a, 125b. . . Second solder bath

126...安裝槽126. . . Mounting slot

1261...安裝塊1261. . . Mounting block

200...導熱單元200. . . Thermal conduction unit

210...傳導部210. . . Conduction

220...反射部220. . . Reflection section

230...卡合部230. . . Clamping department

240...傳導焊接部240. . . Conductive welding

241...端部241. . . Ends

300...導電單元300. . . Conductive unit

310...導電部310. . . Conductive part

320...導電焊接部320. . . Conductive welding

321...端部321. . . Ends

400...發光二極體400. . . Light-emitting diode

M1...印刷電路板M1. . . A printed circuit board

H1...間隔距離H1. . . Spacing distance

P1...參考平面P1. . . Reference plane

W1...導線W1. . . wire

D1...發光方向D1. . . Direction of illumination

第1圖為習知之發光二極體封裝結構之立體圖;1 is a perspective view of a conventional light emitting diode package structure;

第2圖為本發明之發光二極體封裝結構的立體圖;2 is a perspective view of a light emitting diode package structure of the present invention;

第3圖與第4圖為本發明之發光二極體封裝結構的部份分解圖;3 and 4 are partial exploded views of the LED package structure of the present invention;

第5圖為本發明之發光二極體封裝結構設置於一印刷電路板之剖視示意圖,其中發光二極體封裝結構為依據第2圖之AA剖面所繪製;以及5 is a cross-sectional view showing a light emitting diode package structure of the present invention disposed on a printed circuit board, wherein the light emitting diode package structure is drawn according to the AA cross section of FIG. 2;

第6圖為本發明之發光二極體封裝結構設置於一印刷電路板之側視示意圖。Figure 6 is a side elevational view showing the LED package structure of the present invention disposed on a printed circuit board.

2...發光二極體封裝結構2. . . Light emitting diode package structure

100...絕緣本體100. . . Insulating body

101...發光面101. . . Luminous surface

102...焊接面102. . . Welding surface

103...側面103. . . side

104...安裝面104. . . Mounting surface

110...反射蓋110. . . Reflective cover

111...第一焊接面111. . . First welding surface

1111...第一導熱開口1111. . . First heat conduction opening

1112...第一導電開口1112. . . First conductive opening

112...第一側面112. . . First side

114...容置槽114. . . Locating slot

120...基座120. . . Pedestal

121...第二焊接面121. . . Second welding surface

122...第二側面122. . . Second side

124...第一銲錫槽124. . . First solder bath

125a、125b...第二銲錫槽125a, 125b. . . Second solder bath

126...安裝槽126. . . Mounting slot

200...導熱單元200. . . Thermal conduction unit

210...傳導部210. . . Conduction

220...反射部220. . . Reflection section

230...卡合部230. . . Clamping department

240...傳導焊接部240. . . Conductive welding

241...端部241. . . Ends

300...導電單元300. . . Conductive unit

310...導電部310. . . Conductive part

320...導電焊接部320. . . Conductive welding

321...端部321. . . Ends

400...發光二極體400. . . Light-emitting diode

Claims (9)

一種發光二極體封裝結構,包括:一絕緣本體,設有一發光面與一焊接面,並由該發光面凹設一容置槽;一導熱單元,設置於該絕緣本體,該導熱單元包括:一傳導部,露出於該容置槽之底部;一反射部,連接於該傳導部,該反射部貫穿該容置槽之側壁並露出於該焊接面;以及一發光二極體,設置於該導熱單元並位於該容置槽;其中該導熱單元傳導該發光二極體所產生之熱至該反射部;其中由該焊接面凹設一第一銲錫槽,該反射部露出於該第一銲錫槽。 A light-emitting diode package structure includes: an insulative body, a light-emitting surface and a soldering surface, and a receiving groove is recessed from the light-emitting surface; a heat-conducting unit is disposed on the insulating body, the heat-conducting unit comprises: a conductive portion is exposed at a bottom of the accommodating groove; a reflective portion is connected to the conductive portion, the reflective portion penetrates a sidewall of the accommodating groove and is exposed on the soldering surface; and a light emitting diode is disposed at the conductive portion The heat conducting unit is located in the receiving groove; wherein the heat conducting unit transmits heat generated by the light emitting diode to the reflecting portion; wherein a first soldering groove is recessed from the soldering surface, and the reflecting portion is exposed to the first solder groove. 如申請專利範圍第1項所述之發光二極體封裝結構,其中該容置槽之底部設有一導熱槽,該容置槽之側壁係設有一貫穿洞,該傳導部容置於該導熱槽,該反射部容置於該貫穿洞。 The light-emitting diode package structure of claim 1, wherein a bottom of the accommodating groove is provided with a heat-dissipating groove, and a sidewall of the accommodating groove is provided with a through hole, and the conductive portion is received in the heat-conducting groove The reflecting portion is accommodated in the through hole. 如申請專利範圍第2項所述之發光二極體封裝結構,該第一銲錫槽、該貫穿洞與該導熱槽相互連通。 The light-emitting diode package structure according to claim 2, wherein the first solder bath, the through hole and the heat transfer groove communicate with each other. 如申請專利範圍第1項所述之發光二極體封裝結構,更包括一導電單元,設置於該絕緣本體並露出於該容置槽,該導電單元貫穿該絕緣本體並露出於該焊接面,其中該發光二極體電性連接該導電單元。 The light emitting diode package structure of claim 1, further comprising a conductive unit disposed on the insulating body and exposed in the receiving groove, the conductive unit penetrating the insulating body and exposed on the soldering surface, The light emitting diode is electrically connected to the conductive unit. 如申請專利範圍第4項所述之發光二極體封裝結 構,其中由該焊接面凹設一第二銲錫槽,該導電單元突出於該第二銲錫槽之底部。 Light-emitting diode package as described in claim 4 a second solder bath is recessed from the soldering surface, and the conductive unit protrudes from the bottom of the second solder bath. 如申請專利範圍第5項所述之發光二極體封裝結構,其中該導電單元突出於該第二銲錫槽之底部的形狀為一T型,並沿該焊接面彎折至該絕緣本體之側面。 The light-emitting diode package structure of claim 5, wherein the conductive unit protrudes from the bottom of the second solder bath by a T-shape and is bent along the soldering surface to the side of the insulating body. . 如申請專利範圍第1項所述之發光二極體封裝結構,其中該發光面係接鄰該焊接面。 The light emitting diode package structure of claim 1, wherein the light emitting surface is adjacent to the soldering surface. 如申請專利範圍第1項所述之發光二極體封裝結構,其中該導熱單元並不突出於該容置槽之側壁。 The light emitting diode package structure of claim 1, wherein the heat conducting unit does not protrude from a sidewall of the receiving groove. 如申請專利範圍第1項所述之發光二極體封裝結構,其中該導熱單元包覆一反射層。 The light emitting diode package structure of claim 1, wherein the heat conducting unit is coated with a reflective layer.
TW100110075A 2011-03-24 2011-03-24 Packaging structure of light emitted diode TWI419384B (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021249A (en) * 2008-07-29 2010-06-01 Nichia Corp Light emitting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200959342Y (en) * 2006-09-11 2007-10-10 亿光电子工业股份有限公司 LED device
JP5426091B2 (en) * 2007-12-27 2014-02-26 豊田合成株式会社 Light emitting device
JP2010021259A (en) * 2008-07-09 2010-01-28 Toshiba Corp Optical semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021249A (en) * 2008-07-29 2010-06-01 Nichia Corp Light emitting device

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