TWI417946B - Film forming apparatus - Google Patents
Film forming apparatus Download PDFInfo
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- TWI417946B TWI417946B TW98105469A TW98105469A TWI417946B TW I417946 B TWI417946 B TW I417946B TW 98105469 A TW98105469 A TW 98105469A TW 98105469 A TW98105469 A TW 98105469A TW I417946 B TWI417946 B TW I417946B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
Description
本發明係有關於一種薄膜形成裝置,係對已於氣相加熱之基板上供給原料氣體來形成薄膜者。The present invention relates to a film forming apparatus which is formed by supplying a material gas to a substrate which has been heated in a vapor phase to form a film.
近年來,就具有可在300℃左右之低溫以均質之狀態形成優質薄膜等各種特徵之技術而言,可用原子層及分子層單位形成薄膜之原子層成長(Atomic Layer Deposition:ALD)法係受到注目。原子層成長法係一將構成欲形成之膜的各元素原料交互地供給至基板,藉此以原子層單位形成薄膜之技術。原子層成長方法中,在供給各元素原料之期間,使1層或n層(n為2以上之整數)吸附於表面,而多餘之原料則不使其助於成長。這稱為成長之自我停止作用。利用原子層成長方法,可與一般CVD同樣具有高形狀適應性與膜厚控制性,可在更低溫且對更大面積重現性佳地形成均勻之薄膜,如此技術已在檢討運用於大畫面平面顯示裝置。In recent years, the Atomic Layer Deposition (ALD) method has been used to form a film of atomic layer and molecular layer units in a technique in which various characteristics such as a high-quality film can be formed in a homogeneous state at a low temperature of about 300 ° C. Attention. The atomic layer growth method is a technique in which a material constituting a film to be formed is alternately supplied to a substrate, thereby forming a thin film in atomic layer units. In the atomic layer growth method, one layer or n layers (n is an integer of 2 or more) is adsorbed to the surface during the supply of each element raw material, and the excess raw material does not contribute to growth. This is called the self-stopping effect of growth. The atomic layer growth method can achieve high shape adaptability and film thickness control as in general CVD, and can form a uniform film at a lower temperature and better reproducibility for a larger area. Such a technique has been reviewed for use in large screens. Flat display device.
對應大型化之原子層成長裝置係以1邊超過數十cm之矩形基板為對象,因此一般用於對基板平行地供給氣體之橫型裝置。橫型裝置如眾所周知,係對基板平行地供給氣體,裝置之構成較單純,為易於運用在基板大型化之構成。又,如前所述,原子層成長方法具有成長之自我停止作用,相較於其它化學氣相成長法,形成膜之狀態不太會被供給氣體之分布所影響。故,隨著基板大型化,即使在距氣體供給口之距離大為不同之狀態下,亦可期待對基板全體形成均勻之膜。The atomic layer growth apparatus corresponding to the enlargement is a rectangular substrate having a side exceeding several tens of cm, and therefore is generally used for a horizontal device in which a gas is supplied in parallel to a substrate. As is well known, the horizontal type device supplies gas to the substrate in parallel, and the configuration of the device is relatively simple, and it is easy to apply to the structure of the substrate. Further, as described above, the atomic layer growth method has a self-stopping effect of growth, and the state of forming a film is less affected by the distribution of the supply gas than other chemical vapor growth methods. Therefore, as the substrate is increased in size, even in a state where the distance from the gas supply port is greatly different, it is expected that a uniform film is formed on the entire substrate.
惟,發明者等已確認,即使是以上述橫型薄膜形成裝置進行原子層成長,越靠近供給氣體之氣體供給口之領域,膜會形成越厚,而越靠近與氣體供給口相對向之位置的排氣口之領域,則膜會形成越薄。針對用以實現有機金屬氣相成長法之氣相成長裝置,有提案一使用套管等來使氣體流向之均勻性提高的技術(請參考日本專利特開平2-291114號)。惟,使用套管等之技術中,裝置中之成膜領域較小,並不易對應基板大型化。However, the inventors have confirmed that even if the atomic layer is grown by the horizontal thin film forming apparatus, the closer the film is to the gas supply port of the supply gas, the thicker the film is, and the closer it is to the gas supply port. In the field of the exhaust port, the thinner the film will be formed. In the gas phase growth apparatus for realizing the organometallic vapor phase growth method, there is a proposal to use a sleeve or the like to improve the uniformity of the gas flow direction (refer to Japanese Patent Laid-Open No. Hei 2-291114). However, in the technique using a sleeve or the like, the film formation field in the device is small, and it is difficult to increase the size of the substrate.
有鑑於此,本發明之目的在於提供利用一對基板平行地供給氣體來進行原子層成長之橫型薄膜形成裝置,可在不使氣體供給機構複雜化的情形下,針對較大的基板均勻地形成膜。In view of the above, an object of the present invention is to provide a horizontal thin film forming apparatus that performs atomic layer growth by supplying a gas in parallel with a pair of substrates, and can uniformly form a large substrate without complicating the gas supply mechanism. Film formation.
本發明之薄膜形成裝置包含有:裝置本體,係構成可密閉之真空容器者;基板載置台,係配置於裝置本體之內部,而載置成膜對象之基板者;成膜室,係在裝置本體內部形成於基板載置台上者;第1氣體供給部,係將至少包含用以於基板形成薄膜之原料的氣體由第1成膜室之第1側部側供給至成膜室者;第2氣體供給部,係將氣體由與成膜室之第1側部相對向之第2側部側供給至成膜室者;可開閉之第1排氣口,係配置於成膜室之第1側部側者;可開閉之第2排氣口,係配置於成膜室之第2側部側者;及,排氣部,係以排氣通路連通於第1排氣口及第2排氣口者;又,由第1氣體供給部供給氣體時,係關閉第1排氣口而開放第2排氣口,由第2氣體供給部供給氣體時,則關閉第2排氣口而開放第1排氣口。The film forming apparatus of the present invention includes: a device body that constitutes a vacuum container that can be sealed; a substrate mounting table that is disposed inside the device body and that places a substrate to be film-formed; and a film forming chamber that is attached to the device The inside of the main body is formed on the substrate mounting table; the first gas supply unit supplies the gas containing at least the material for forming the thin film on the substrate from the first side of the first film forming chamber to the film forming chamber; The second gas supply unit supplies the gas to the film formation chamber from the second side portion facing the first side portion of the film formation chamber, and the first discharge port that can be opened and closed is disposed in the film formation chamber. a first side portion; an openable and closable second exhaust port disposed on a second side of the film forming chamber; and an exhaust portion connected to the first exhaust port and an exhaust passage When the gas is supplied from the first gas supply unit, the first exhaust port is closed to open the second exhaust port, and when the gas is supplied from the second gas supply unit, the second exhaust port is closed. The first exhaust port is opened.
本發明具有將氣體由成膜室之第1側部側供給至成膜室之第1氣體供給部、由與成膜室之第1側部相對向的第2側部側供給至成膜室之第2氣體供給部、配置於成膜室之第1側部側而可開閉之第1排氣口、配置於成膜室之第2側部側而可開閉之第2排氣口、以及以排氣通路連通於第1排氣口與第2排氣口之排氣部。結果,依據本發明可獲得之效果,係利用一對基板平行地供給氣體來進行原子層成長之橫型薄膜形成裝置,可在不使氣體供給機構複雜化的情形下,針對較大的基板均勻地形成膜。The present invention has a first gas supply unit that supplies a gas from the first side portion side of the film forming chamber to the film forming chamber, and is supplied to the film forming chamber from the second side portion side facing the first side portion of the film forming chamber. a second gas supply unit, a first exhaust port that is openable and closable on the first side of the film formation chamber, a second exhaust port that is openable and closable on the second side of the film formation chamber, and a second exhaust port that can be opened and closed. The exhaust passage is connected to the exhaust portions of the first exhaust port and the second exhaust port. As a result, the effect obtainable by the present invention is a horizontal film forming apparatus which performs atomic layer growth by supplying a gas in parallel with a pair of substrates, and can be uniform for a large substrate without complicating the gas supply mechanism. The film is formed on the ground.
第1圖係概略顯示本發明實施例1之薄膜形成裝置構成例的剖面圖。Fig. 1 is a cross-sectional view schematically showing an example of the configuration of a film forming apparatus according to a first embodiment of the present invention.
第2圖係概略顯示本發明實施例2之薄膜形成裝置構成例的剖面圖。Fig. 2 is a cross-sectional view schematically showing an example of the configuration of a film forming apparatus according to a second embodiment of the present invention.
第3圖係用以說明本發明實施例2之薄膜形成裝置動作的部分擴大圖及平面圖。Fig. 3 is a partially enlarged plan view and a plan view for explaining the operation of the thin film forming apparatus of the second embodiment of the present invention.
第4圖係用以說明本發明實施例2之薄膜形成裝置動作的部分擴大圖及平面圖。Fig. 4 is a partially enlarged plan view and a plan view for explaining the operation of the thin film forming apparatus of the second embodiment of the present invention.
第5圖係用以說明本發明實施例3之薄膜形成裝置構成及動作的部分擴大圖。Fig. 5 is a partially enlarged view for explaining the configuration and operation of the thin film forming apparatus of the third embodiment of the present invention.
第6圖係用以說明本發明實施例3之薄膜形成裝置構成及動作的部分擴大圖。Fig. 6 is a partially enlarged view for explaining the configuration and operation of the thin film forming apparatus of the third embodiment of the present invention.
以下,參考圖式來說明本發明之實施例。Hereinafter, embodiments of the invention will be described with reference to the drawings.
[實施例1][Example 1]
首先,說明本發明之實施例1。第1圖係概略顯示本發明實施例1之薄膜形成裝置構成例的剖面圖。首先,本實施例之薄膜形成裝置具有構成可密閉之真空容器的裝置本體101、配置於裝置本體101之內部上側的成膜室102、配置於裝置本體101之內部下側的下部排氣室103及配置於成膜室102與下部排氣室103之交界位置的壓框104。而,本實施例中,係就裝置本體101之內部由成膜室102及下部排氣室103所構成之情形進行說明。First, the first embodiment of the present invention will be described. Fig. 1 is a cross-sectional view schematically showing an example of the configuration of a film forming apparatus according to a first embodiment of the present invention. First, the film forming apparatus of the present embodiment has a device body 101 that constitutes a vacuum container that can be sealed, a film forming chamber 102 that is disposed on the upper side of the device body 101, and a lower exhaust chamber 103 that is disposed on the lower side of the device body 101. And a pressing frame 104 disposed at a boundary position between the film forming chamber 102 and the lower exhaust chamber 103. In the present embodiment, the case where the inside of the apparatus main body 101 is constituted by the film forming chamber 102 and the lower exhaust chamber 103 will be described.
又,裝置本體101之內部,於下部排氣室103之側配置有作為膜形成對象之基板W的基板載置台105。基板載置台105之上面為載置基板W之載置面。基板載置台105藉載置台支撐部106支撐於下部排氣室103之底部上。又,基板載置台105之周緣部與壓框104接觸。故,藉基板載置台105與壓框104,可區隔(劃分)成膜室102與下部排氣室103。Further, inside the apparatus main body 101, a substrate mounting table 105 as a substrate W to be film-formed is disposed on the side of the lower exhaust chamber 103. The upper surface of the substrate stage 105 is a mounting surface on which the substrate W is placed. The substrate stage 105 is supported by the stage support portion 106 on the bottom of the lower exhaust chamber 103. Further, the peripheral portion of the substrate stage 105 is in contact with the pressure frame 104. Therefore, the film forming chamber 102 and the lower exhaust chamber 103 can be partitioned (divided) by the substrate mounting table 105 and the pressing frame 104.
而,舉例言之,基板載置台105可構造成藉載置台支撐部106由下部排氣室103側朝成膜室102側之上下方向移動。藉將基板載置台105朝下方移動,可將由設於裝置本體101之下部排氣室103之領域側的閘部(未圖示)所搬入之基板載置於基板載置台105上。又,舉例言之,藉使載置台支撐部106朝上方移動,可呈基板載置台105之周緣部與壓框104接觸之狀態,藉此呈上述區隔狀態。For example, the substrate stage 105 can be configured to be moved from the lower exhaust chamber 103 side to the film forming chamber 102 side in the up and down direction by the loading stage support portion 106. By moving the substrate stage 105 downward, the substrate carried by the gate (not shown) provided on the field side of the exhaust chamber 103 at the lower portion of the apparatus main body 101 can be placed on the substrate stage 105. Further, for example, when the mounting table support portion 106 is moved upward, the peripheral edge portion of the substrate mounting table 105 can be brought into contact with the pressing frame 104, thereby being in the above-described divided state.
又,本實施例之薄膜形成裝置具有氣體供給部(第1氣體供給部)107a與氣體供給部(第2氣體供給部)107b,氣體供給部107a係將包含用以於基板載置台105所載置之基板W形成薄膜之原料的氣體,由成膜室102之其中一側部(第1側部)供給至成膜室102之領域者,而氣體供給部107b則係將上述氣體由與上述側部相對向之側部(第2側部)供給至成膜室102之領域者。雖未圖示,氣體供給部107a及氣體供給部107b如眾所周知,可連接包含將液體原料汽化之汽化器等氣體供給機構,而可供給例如三甲基鋁(TMA)等原料或臭氧等氧化氣體,或是氬(Ar)等沖洗氣體。Further, the film forming apparatus of the present embodiment includes a gas supply unit (first gas supply unit) 107a and a gas supply unit (second gas supply unit) 107b, and the gas supply unit 107a is included for the substrate mounting table 105. The gas that forms the raw material of the substrate W is supplied to one of the film forming chambers 102 from the one side (first side portion) of the film forming chamber 102, and the gas supply portion 107b uses the gas described above. The side portion is supplied to the field of the film forming chamber 102 with respect to the side portion (second side portion). Though not shown, the gas supply unit 107a and the gas supply unit 107b may be connected to a gas supply unit such as a vaporizer that vaporizes a liquid material, and may supply a raw material such as trimethylaluminum (TMA) or an oxidizing gas such as ozone. Or a flushing gas such as argon (Ar).
又,本實施形態之薄膜形成裝置於成膜室102之上部具有成膜室排氣部108及2處排氣口(第1排氣口)108a、排氣口(第2排氣口)108b。又,成膜室排氣部108與排氣口108a、108b以排氣通路109連通,且排氣口108a設有閥110a,排氣口108b設有閥110bm,而可各自開閉。本實施例中,排氣口108a配置於成膜室102其中一側部(第1側部)之上部,排氣口108b則配置於另一側部(第2側部)之上部。Further, the film forming apparatus of the present embodiment has a film forming chamber exhausting portion 108 and two exhaust ports (first exhaust ports) 108a and exhaust ports (second exhaust ports) 108b in the upper portion of the film forming chamber 102. . Further, the film forming chamber exhausting portion 108 communicates with the exhaust ports 108a and 108b via the exhaust passage 109, and the exhaust port 108a is provided with a valve 110a, and the exhaust port 108b is provided with a valve 110bm, and can be opened and closed. In the present embodiment, the exhaust port 108a is disposed above the one side portion (first side portion) of the film forming chamber 102, and the exhaust port 108b is disposed at the upper portion of the other side portion (second side portion).
又,下部排氣室103具有用以將薄膜形成裝置之內部全體加以排氣之排氣部111,且排氣部111設有閥112。而,雖未圖示,但如眾所周知,成膜室排氣部108及排氣部111可連接於乾式泵等排氣機構,藉此進行上述排氣。Further, the lower exhaust chamber 103 has an exhaust portion 111 for exhausting the entire interior of the thin film forming apparatus, and the exhaust portion 111 is provided with a valve 112. Further, although not shown, as is well known, the film forming chamber exhaust portion 108 and the exhaust portion 111 can be connected to an exhaust mechanism such as a dry pump to perform the above-described exhaust.
本實施例之薄膜形成裝置中,首先,在由氣體供給部107a導入氣體時,在以成膜室排氣部108進行排氣之狀態下,關閉閥110a並打開閥110b。故,氣體供給部107a所導入之氣體會於基板載置台105所載置之基板W上流向排氣口108b側。相對於此,在由氣體供給部107b導入氣體時,在以成膜室排氣部108進行排氣之狀態下,關閉閥110b並打開閥110a。故,氣體供給部107b所導入之氣體會於基板載置台105所載置之基板W上流向排氣口108a側。In the film forming apparatus of the present embodiment, first, when the gas is introduced from the gas supply unit 107a, the valve 110a is closed and the valve 110b is opened while the film forming chamber exhaust unit 108 is exhausting. Therefore, the gas introduced by the gas supply unit 107a flows to the side of the exhaust port 108b on the substrate W placed on the substrate stage 105. On the other hand, when the gas is introduced from the gas supply unit 107b, the valve 110b is closed and the valve 110a is opened while the film forming chamber exhaust unit 108 is exhausting. Therefore, the gas introduced by the gas supply unit 107b flows to the side of the exhaust port 108a on the substrate W placed on the substrate stage 105.
故,依據本實施例之薄膜形成裝置,可切換上述2個狀態來使因氣體流動而形成於基板W上之膜(膜厚)分布反轉。因此,依據本實施例之薄膜形成裝置可較均勻地形成膜。Therefore, according to the thin film forming apparatus of the present embodiment, the above two states can be switched to reverse the distribution of the film (thickness) formed on the substrate W due to the gas flow. Therefore, the film forming apparatus according to the present embodiment can form a film more uniformly.
接著,說明本實施例之薄膜形成裝置之動作例。首先,朝基板載置台105上搬入作為處理對象之基板W。舉例言之,基板W係平面觀視之尺寸為37cm×47cm之板狀玻璃基板。接著,形成使裝置本體101之內部密閉之狀態,且藉排氣部111將包含成膜室102及下部排氣室103之裝置本體101的內部減壓至預定壓力(2~3Pa左右)之狀態。此外,利用載置台支撐部106之動作使基板載置台105朝裝置本體101之上方(成膜室102之方向)移動直到周緣部領域與壓框104接觸為止,使裝置本體101呈成膜室102與下部排氣室103分隔之狀態。Next, an operation example of the thin film forming apparatus of the present embodiment will be described. First, the substrate W to be processed is carried onto the substrate stage 105. For example, the substrate W is a plate-shaped glass substrate having a size of 37 cm × 47 cm in plan view. Then, a state in which the inside of the apparatus main body 101 is sealed is formed, and the inside of the apparatus main body 101 including the film forming chamber 102 and the lower exhaust chamber 103 is decompressed to a predetermined pressure (about 2 to 3 Pa) by the exhaust unit 111. . Further, the substrate mounting table 105 is moved toward the upper side of the apparatus main body 101 (the direction of the film forming chamber 102) by the operation of the mounting table support portion 106 until the peripheral portion field contacts the pressing frame 104, so that the apparatus main body 101 is formed into the film forming chamber 102. A state separated from the lower exhaust chamber 103.
接著,在以成膜室排氣部108進行排氣之狀態下,關閉閥110a並打開閥110b,並由氣體供給部107a供給預定氣體,利用原子層成長法於基板W上形成薄膜。舉例言之,利用基板載置台105之加熱機構105h,呈將基板W之溫度加熱至300℃左右之狀態。接著,藉氣體供給部107a,朝成膜室102之內部供給例如TMA氣體來作為原料氣體(吸附氣體),呈已將原料氣體供給至基板W上之狀態,並呈基板W上吸附了1層TMA分子之狀態。舉例言之,原料氣體可與Ar等惰性載體氣體一同供給。藉該原料氣體之供給,成膜室102之內部會到達壓力100Pa左右。原料氣體之供給進行約1~2秒。Then, in a state where the film forming chamber exhaust unit 108 is exhausted, the valve 110a is closed and the valve 110b is opened, and a predetermined gas is supplied from the gas supply unit 107a, and a thin film is formed on the substrate W by the atomic layer growth method. For example, the heating mechanism 105h of the substrate mounting table 105 is in a state in which the temperature of the substrate W is heated to about 300 °C. Then, the gas supply unit 107a supplies, for example, TMA gas as a material gas (adsorbed gas) to the inside of the film forming chamber 102, and supplies the material gas to the substrate W, and adsorbs one layer on the substrate W. The state of the TMA molecule. For example, the material gas may be supplied together with an inert carrier gas such as Ar. By the supply of the material gas, the inside of the film forming chamber 102 reaches a pressure of about 100 Pa. The supply of the material gas is carried out for about 1 to 2 seconds.
接著,停止原料氣體之供給,在已藉排氣部111及成膜室排氣部108將成膜室102之內部排氣之狀態下,以氣體供給部107a將例如Ar或氮氣等沖洗氣體供給至成膜室102之內部。在該沖洗中,呈2處排氣口108a及排氣口108b開啟之狀態。而,亦可不是2處,而是只有排氣口108b打開。藉該沖洗,吸附於基板W以外之多餘氣體會由成膜室102之內部去除。Then, the supply of the material gas is stopped, and the inside of the film forming chamber 102 is exhausted in the exhausted portion 111 and the film forming chamber exhausting portion 108, and the flushing gas such as Ar or nitrogen is supplied to the gas supply unit 107a. To the inside of the film forming chamber 102. In this flushing, the two exhaust ports 108a and the exhaust port 108b are opened. However, it is not possible to have two places, but only the exhaust port 108b is opened. By this flushing, excess gas adsorbed outside the substrate W is removed from the inside of the film forming chamber 102.
接著,在以成膜室排氣部108進行排氣之狀態下,關閉閥110a並打開閥110b,藉氣體供給部107a對成膜室102之內部導入氧化氣體,以對基板W上供給氧化氣體,使吸附於基板W表面之分子與氧化氣體反應,呈基板W表面形成有1分子層之氧化鋁薄膜之狀態。Then, in a state where the film forming chamber exhaust unit 108 is exhausted, the valve 110a is closed and the valve 110b is opened, and the gas supply unit 107a introduces an oxidizing gas into the inside of the film forming chamber 102 to supply the oxidizing gas to the substrate W. The molecules adsorbed on the surface of the substrate W are reacted with an oxidizing gas to form a single-layer aluminum oxide film on the surface of the substrate W.
之後,與上述同樣地,藉Ar等惰性氣體將成膜室102之內部沖洗,呈已將多餘氣體由反應室去除之狀態。將以上原料氣體之供給→沖洗→氧化氣體之供給→沖洗作為1個循環,並重複50個循環。Thereafter, in the same manner as described above, the inside of the film forming chamber 102 is flushed by an inert gas such as Ar, and the excess gas is removed from the reaction chamber. The supply of the above raw material gas → flushing → supply of oxidizing gas → flushing was performed as one cycle, and 50 cycles were repeated.
接著,在以成膜室排氣部108進行排氣之狀態下,關閉閥110b而打開閥110a,並藉氣體供給部107b進行上述原料氣體及氧化氣體之導入,藉此將原料氣體之供給→沖洗→氧化氣體之供給→沖洗重複50個循環。Then, in a state where the film forming chamber exhaust unit 108 is exhausted, the valve 110b is closed to open the valve 110a, and the raw material gas and the oxidizing gas are introduced by the gas supply unit 107b, thereby supplying the material gas → Flushing → supply of oxidizing gas → flushing was repeated for 50 cycles.
如此,先在關閉閥110a而打開閥110b之狀態下,以氣體供給部107a進行氣體供給50個循環,接著,在關閉閥110b而打開閥110a之狀態下,切換為以氣體供給部107b進行氣體之供給並進行50個循環,合計100個循環,藉此可形成膜厚10nm左右之氧化鋁薄膜。In the state where the valve 110a is closed and the valve 110b is opened, the gas supply unit 107a performs gas supply for 50 cycles. Then, when the valve 110b is closed and the valve 110a is opened, the gas is supplied to the gas supply unit 107b. The supply was carried out for 50 cycles for a total of 100 cycles, whereby an aluminum oxide film having a film thickness of about 10 nm was formed.
依據本實施例之薄膜形成裝置,在一開始的50個循環產生的流動方向之分布會因接著的50個循環產生的流動方向之分布而抵銷,因此可以均勻之狀態形成膜厚。舉例言之,不切換氣體供給狀態而重複300個循環左右來進行上述原子層成長之成膜時,氣體供給部(氣體供給口)附近與從這裡離排氣側約400mm處,膜厚約會產生3nm左右之分布。相對於此,依據本實施例,可獲得氣體流動方向之膜厚分布約為1nm左右之狀態。而,上述說明中,雖以50個循環切換,但並未受限於此,當然亦可每1個循環切換,或每2個循環切換。According to the thin film forming apparatus of the present embodiment, the distribution of the flow directions generated in the first 50 cycles is offset by the distribution of the flow directions generated by the subsequent 50 cycles, so that the film thickness can be formed in a uniform state. For example, when the film formation is performed by repeating about 300 cycles without switching the gas supply state, the film thickness is generated near the gas supply portion (gas supply port) and about 400 mm from the exhaust side. Distribution around 3nm. On the other hand, according to the present embodiment, a state in which the film thickness distribution in the gas flow direction is about 1 nm can be obtained. However, in the above description, although switching is performed in 50 cycles, it is not limited thereto, and of course, it may be switched every one cycle or every two cycles.
而,上述說明中,雖就裝置本體101之內部由成膜室102及下部排氣室103構成之情況說明,但本實施例中,亦可將基板載置台105配置於裝置本體1內部,而成膜室102在裝置本體101之內部形成於基板載置台上。舉例言之,裝置本體101內部可由成膜室102構成,即使沒有排氣部111及壓框104亦可。又,基板載置台105之上面形成於成膜室102之底部亦可。而,此時,可考慮使排氣通路109包含於裝置本體101。In the above description, the inside of the apparatus main body 101 is configured by the film forming chamber 102 and the lower exhaust chamber 103. However, in the present embodiment, the substrate mounting table 105 may be disposed inside the apparatus main body 1. The film forming chamber 102 is formed on the substrate mounting table inside the apparatus body 101. For example, the inside of the apparatus body 101 may be constituted by the film forming chamber 102 even without the exhaust portion 111 and the pressing frame 104. Further, the upper surface of the substrate stage 105 may be formed at the bottom of the film forming chamber 102. In this case, it is conceivable to include the exhaust passage 109 in the apparatus body 101.
[實施例2][Embodiment 2]
接著,說明本發明之實施例2。第2圖~第4圖係用以說明本發明實施例2之薄膜形成裝置的構成及動作之圖。如第2圖所示,首先,本實施例之薄膜形成裝置具有構成一可密閉真空容器之裝置本體201、配置於裝置本體201之內部上側的成膜室202及配置於裝置本體201之內部下側的下部排氣室203。又,裝置本體201之內部係在下部排氣室203側配置了載置作為膜形成對象之基板的基板載置台205,並藉載置台支撐部206支撐。又,舉例言之,基板載置台205內藏有將載置之基板加熱之加熱機構205h。本實施例中,係就裝置本體201之內部由成膜室202及下部排氣室203構成之情況進行說明。Next, a second embodiment of the present invention will be described. 2 to 4 are views for explaining the configuration and operation of the thin film forming apparatus of the second embodiment of the present invention. As shown in Fig. 2, the film forming apparatus of the present embodiment has a device body 201 constituting a sealable vacuum container, a film forming chamber 202 disposed on the upper side of the device body 201, and a device disposed inside the device body 201. The lower exhaust chamber 203 on the side. In the inside of the apparatus main body 201, the substrate mounting table 205 on which the substrate to be formed is placed is placed on the lower exhaust chamber 203 side, and is supported by the mounting table support portion 206. Moreover, for example, the substrate mounting table 205 has a heating mechanism 205h for heating the substrate to be placed. In the present embodiment, the case where the inside of the apparatus main body 201 is constituted by the film forming chamber 202 and the lower exhaust chamber 203 will be described.
又,本實施例之薄膜形成裝置具有氣體供給部207a及氣體供給部207b,氣體供給部207a係將包含用以於基板載置台205所載置之基板W形成薄膜之原料的氣體,由成膜室202之其中一側部(第1側部)供給至成膜室202之領域者,而氣體供給部207b則係將上述氣體由與上述側部相對向之側部(第2側部)供給至成膜室202之領域者。雖未圖示,氣體供給部207a及氣體供給部207b如眾所周知,可連接包含將液體原料汽化之汽化器等氣體供給機構,而可供給TMA等原料氣體或臭氧等氧化氣體,及Ar等沖洗氣體。Further, the film forming apparatus of the present embodiment includes a gas supply unit 207a and a gas supply unit 207b, and the gas supply unit 207a is formed by forming a film containing a material for forming a thin film on the substrate W placed on the substrate stage 205. One of the chambers 202 (the first side portion) is supplied to the field of the film forming chamber 202, and the gas supply portion 207b supplies the gas to the side portion (the second side portion) facing the side portion. To the field of the film forming chamber 202. As is well-known, the gas supply unit 207a and the gas supply unit 207b can be connected to a gas supply means such as a vaporizer that vaporizes a liquid material, and can supply a raw material gas such as TMA or an oxidizing gas such as ozone, and a flushing gas such as Ar.
又,本實施例之薄膜形成裝置中,下部排氣室203之領域具有用以將裝置本體201內部加以排氣之排氣部209。而,雖未圖示,但如眾所周知,排氣部209可連接於乾式泵等排氣機構,藉此進行裝置本體201內部之排氣。Further, in the film forming apparatus of the present embodiment, the field of the lower exhaust chamber 203 has an exhaust portion 209 for exhausting the inside of the apparatus body 201. Although not shown, as is well known, the exhaust unit 209 can be connected to an exhaust mechanism such as a dry pump to exhaust the inside of the apparatus body 201.
此外,本實施例之薄膜形成裝置具有分隔部204a、分隔部204b及分隔部204c,分隔部204a固定於成膜室202及下部排氣室203之交界位置,分隔部204b與分隔部204c則可於相同交界位置上移動,而可收容於裝置本體201所形成之內部側壁的收容部211a及收容部211b。在成膜室202及下部排氣室203之交界位置上,分隔部(第1分隔部)204b係配置於基板載置台205之氣體供給部207a側(第1側部側)與裝置本體201之內部側面間。另一方面,分隔部(第2分隔部)204c係配置於基板載置台205之氣體供給部207b側(第2側部側)與裝置本體201之內部側面間。又,在與該等相鄰之情形下,配置2個分隔部204a。Further, the film forming apparatus of the present embodiment has a partition portion 204a, a partition portion 204b, and a partition portion 204c. The partition portion 204a is fixed at a boundary position between the film forming chamber 202 and the lower exhaust chamber 203, and the partition portion 204b and the partition portion 204c are The accommodating portion 211a and the accommodating portion 211b that can be accommodated in the inner side wall formed by the device body 201 are moved at the same boundary position. The partitioning portion (first partition portion) 204b is disposed on the gas supply portion 207a side (the first side portion side) of the substrate mounting table 205 and the apparatus body 201 at the boundary between the film forming chamber 202 and the lower exhaust chamber 203. Inside the side. On the other hand, the partition portion (second partition portion) 204c is disposed between the gas supply portion 207b side (the second side portion side) of the substrate stage 205 and the inner side surface of the apparatus main body 201. Further, in the case of being adjacent to the above, two partitions 204a are disposed.
固定之2個分隔部204a的裝置本體201內部側之下面周緣部,係在配置有2個分隔部204a之側(邊)與基板載置台205之上面周緣部接觸。又,如後所述,朝裝置本體201內側前進之狀態的分隔部204b及分隔部204c,分隔部204b及分隔部204c內部側之下面周緣部在配置有分隔部204b及分隔部204c之側(邊)與基板載置台205之上面周緣部接觸。在這些接觸之狀態下,藉2個分隔部204a與前進狀態之分隔部204b及分隔部204c,呈在平面觀視下形成矩形框之狀態,且藉該框與基板載置台205,呈成膜室202與下部排氣室203分隔(區隔)之狀態。The lower peripheral edge portion on the inner side of the apparatus main body 201 of the two fixed partition portions 204a is in contact with the upper peripheral edge portion of the substrate stage 205 on the side (side) where the two partition portions 204a are disposed. Further, as will be described later, the partition portion 204b and the partition portion 204c which are advanced toward the inside of the apparatus main body 201, the partition portion 204b, and the lower peripheral edge portion on the inner side of the partition portion 204c are disposed on the side of the partition portion 204b and the partition portion 204c ( The side is in contact with the upper peripheral portion of the substrate stage 205. In the state of the contact, the partitioning portion 204b and the partitioning portion 204b in the forward state are formed in a state in which a rectangular frame is formed in a plan view, and the frame and the substrate mounting table 205 are formed into a film. The chamber 202 is separated (partitioned) from the lower exhaust chamber 203.
分隔部204b透過連結部212a與驅動部213a連結,可朝氣體供給部207a(第1側部)與氣體供給部207b(第2側部)相對向之方向移動。換言之,分隔部204b可朝由第1側部朝向第2側部之方向及其相反方向移動。又,分隔部204c透過連結部212b與驅動部213b連結,可朝氣體供給部207a(第1側部)與氣體供給部207b(第2側部)相對向之方向移動。換言之,分隔部204c可朝由第2側部朝向第1側部之方向及其相反方向移動。舉例言之,驅動部213a及驅動部213b配置於裝置本體201之外部。The partition portion 204b is coupled to the drive portion 213a via the connection portion 212a, and is movable in a direction in which the gas supply portion 207a (first side portion) and the gas supply portion 207b (second side portion) face each other. In other words, the partition portion 204b is movable in the direction from the first side portion toward the second side portion and in the opposite direction. Further, the partition portion 204c is coupled to the drive portion 213b via the connection portion 212b, and is movable in the direction in which the gas supply portion 207a (first side portion) and the gas supply portion 207b (second side portion) face each other. In other words, the partition portion 204c is movable in the direction from the second side portion toward the first side portion and in the opposite direction. For example, the driving unit 213a and the driving unit 213b are disposed outside the apparatus body 201.
分隔部204b藉驅動部213a之驅動,移動至朝收容部211a後退之狀態及朝裝置本體201之內部方向前進之狀態。後退之狀態的分隔部204b與基板載置台205間呈形成連通路之狀態。又,分隔部204c藉驅動部213b之驅動,移動至朝收容部211b後退之狀態及朝裝置本體201之內部方向前進之狀態。後退之狀態的分隔部204c與基板載置台205間呈形成連通路之狀態。The partitioning portion 204b is driven by the driving portion 213a to move back to the state in which the accommodating portion 211a retreats and to advance in the inner direction of the apparatus body 201. The partitioning portion 204b in the retracted state and the substrate mounting table 205 are in a state of forming a communication path. Further, the partition portion 204c is moved to a state in which the storage portion 211b is retracted and a state in which it is advanced toward the inside of the apparatus main body 201 by the driving of the driving portion 213b. The partitioning portion 204c in the retracted state and the substrate mounting table 205 are in a state of forming a communication path.
本實施例之薄膜形成裝置中,首先如第3圖所示,由氣體供給部207a導入氣體時,在以排氣部209進行排氣之狀態下,藉驅動部213a之動作使分隔部204b呈前進之狀態(請參考薄膜形成裝置之左側部分301之狀態),並藉驅動部213b之動作使分隔部204c呈後退之狀態(請參考薄膜形成裝置之右側部分302之狀態)。該狀態下,分隔部204c與基板載置台205間會形成連通路,藉該連通路,成膜室202呈與已藉排氣部209排氣之下部排氣室203連通之狀態。In the film forming apparatus of the present embodiment, as shown in FIG. 3, when the gas is introduced from the gas supply unit 207a, the partitioning portion 204b is caused by the operation of the driving unit 213a while the exhaust unit 209 is exhausting. In the forward state (refer to the state of the left side portion 301 of the film forming apparatus), the partition portion 204c is retracted by the operation of the driving portion 213b (please refer to the state of the right side portion 302 of the film forming apparatus). In this state, a communication path is formed between the partition portion 204c and the substrate mounting table 205, and the film forming chamber 202 is in a state of being communicated with the exhausted portion 203 of the lower portion of the exhausted portion 209.
故,藉氣體供給部207a導入之氣體會於基板載置台205所載置之基板W上流向分隔部204c(氣體供給部207b)側(請參考載置面303之狀態),並通過分隔部204c與基板載置台205間,朝下部排氣室203側排氣。換言之,本實施例之薄膜形成裝置中,氣體供給部207b(分隔部204c)側(第2側部側)之基板載置台205與裝置本體201之內部側面間,具有可藉分隔部204c之移動而開關之排氣口(第2排氣口)。Therefore, the gas introduced by the gas supply unit 207a flows to the partition portion 204c (gas supply portion 207b) side on the substrate W placed on the substrate mounting table 205 (refer to the state of the mounting surface 303), and passes through the partition portion 204c. The substrate is placed between the substrate mounting table 205 and exhausted toward the lower exhaust chamber 203 side. In other words, in the film forming apparatus of the present embodiment, the substrate mounting table 205 on the gas supply portion 207b (partition portion 204c) side (the second side portion side) and the inner side surface of the apparatus main body 201 are movable by the partition portion 204c. The exhaust port of the switch (the second exhaust port).
相對於此,如第4圖所示,由氣體供給部207b導入氣體時,在以排氣部209進行排氣之狀態下,藉驅動部213a之動作使分隔部204b後退(請參考薄膜形成裝置之左側部分301之狀態),並藉驅動部213b之動作使分隔部204c前進(請參考薄膜形成裝置之右側部分302之狀態)。該狀態下,分隔部204b與基板載置台205間會形成連通路,藉該連通路,成膜室202呈與已藉排氣部209排氣之下部排氣室203連通之狀態。On the other hand, as shown in FIG. 4, when the gas is introduced from the gas supply unit 207b, the partitioning portion 204b is moved backward by the operation of the driving unit 213a while the exhaust unit 209 is exhausting (refer to the film forming apparatus). The state of the left side portion 301) advances the partition portion 204c by the action of the driving portion 213b (please refer to the state of the right side portion 302 of the film forming device). In this state, a communication path is formed between the partition portion 204b and the substrate mounting table 205, and the film forming chamber 202 is in a state of being communicated with the exhaust portion 203 of the lower portion of the exhausted portion 209.
故,藉氣體供給部207b導入之氣體會於基板載置台205所載置之基板W上流向分隔部204b(氣體供給部207a)側(請參考載置面303之狀態),並通過分隔部204b與基板載置台205間之連通路,朝下部排氣室203側排氣。故,此時,氣體供給部207a(分隔部204b)側(第1側部側)之基板載置台205與裝置本體201之內部側面間,具有可藉分隔部204b之移動而開關之排氣口(第1排氣口)。Therefore, the gas introduced by the gas supply unit 207b flows to the partition portion 204b (gas supply portion 207a) side on the substrate W placed on the substrate mounting table 205 (refer to the state of the mounting surface 303), and passes through the partition portion 204b. The communication path with the substrate stage 205 is exhausted toward the lower exhaust chamber 203 side. Therefore, at this time, between the substrate mounting table 205 on the gas supply portion 207a (partition portion 204b) side (the first side portion side) and the inner side surface of the apparatus main body 201, there is an exhaust port that can be opened and closed by the movement of the partition portion 204b. (first exhaust port).
本實施例2中,前述實施例1之成膜室排氣部108對應排氣部209,閥110a及閥110b對應分隔部204b及分隔部204c,下部排氣室203對應排氣通路109。又,因本實施例2之分隔部204b及分隔部204c之動作而形成之連通路的成膜室202側之開口部係對應前述實施例1之排氣口108a及排氣口108b。In the second embodiment, the film forming chamber exhausting portion 108 of the first embodiment corresponds to the exhaust portion 209, the valve 110a and the valve 110b correspond to the partition portion 204b and the partition portion 204c, and the lower exhaust chamber 203 corresponds to the exhaust passage 109. Further, the opening portion on the film forming chamber 202 side of the communication path formed by the operation of the partition portion 204b and the partition portion 204c of the second embodiment corresponds to the exhaust port 108a and the exhaust port 108b of the first embodiment.
如上所述,依據本實施例之薄膜形成裝置,可切換上述2個狀態來使因氣體流動而形成於基板W上之膜(膜厚)分布反轉。藉此,依據本實施例之薄膜形成裝置可更均勻地形成膜。As described above, according to the thin film forming apparatus of the present embodiment, the two states can be switched to reverse the distribution of the film (thickness) formed on the substrate W due to the gas flow. Thereby, the film forming apparatus according to the present embodiment can form the film more uniformly.
接著,說明本實施例之薄膜形成裝置的動作例。首先,將作為處理對象之基板W搬入至基板載置台205上。舉例言之,基板W在平面觀視之尺寸為37cm×47cm之板狀玻璃基板。接著,使裝置本體201之內部密閉,並藉排氣部209使包含成膜室202及下部排氣室203之裝置本體201內部減壓至預定壓力(2~3Pa左右)。Next, an operation example of the thin film forming apparatus of the present embodiment will be described. First, the substrate W to be processed is carried onto the substrate stage 205. For example, the substrate W has a plate-shaped glass substrate having a size of 37 cm × 47 cm in plan view. Next, the inside of the apparatus main body 201 is sealed, and the inside of the apparatus main body 201 including the film forming chamber 202 and the lower exhaust chamber 203 is depressurized to a predetermined pressure (about 2 to 3 Pa) by the exhaust unit 209.
在該減壓時,藉驅動部213a及驅動部213b之動作,將分隔部204b及分隔部204c收容於收容部211a及收容部211b側。藉此,利用分隔部204b與基板載置台205間之間隙所形成之連通路及分隔部204c與基板載置台205間之連通路,使成膜室202與下部排氣室203呈連通之狀態,而藉排氣部209之排氣,使成膜室202與下部排氣室203一同排氣。At the time of the decompression, the partition portion 204b and the partition portion 204c are housed in the accommodating portion 211a and the accommodating portion 211b side by the operation of the driving portion 213a and the driving portion 213b. Thereby, the communication path formed by the gap between the partition portion 204b and the substrate mounting table 205 and the communication path between the partition portion 204c and the substrate mounting table 205 are in a state in which the film forming chamber 202 and the lower exhaust chamber 203 are in communication with each other. On the other hand, the film forming chamber 202 is exhausted together with the lower exhaust chamber 203 by the exhaust of the exhaust unit 209.
而,舉例言之,亦可利用具有使基板載置台205可上下移動之機構的載置台支撐部206,使基板載置台205下降,藉此使成膜室202與下部排氣室203連通來進行上述減壓。此時,在預定減壓結束而進行後述氣體導入之階段,係預先使載置台支撐部206動作來使基板載置台上升至預定位置。By way of example, the mounting table support portion 206 having a mechanism for moving the substrate mounting table 205 up and down can be used to lower the substrate mounting table 205, thereby allowing the film forming chamber 202 to communicate with the lower exhaust chamber 203. The above decompression. At this time, when the predetermined pressure reduction is completed and the gas introduction is performed later, the stage support portion 206 is operated in advance to raise the substrate stage to a predetermined position.
藉上述排氣,當成膜室202與下部排氣室203減壓至預定壓力後,藉驅動部213a之動作使分隔部204b前進,使分隔部204b之下面周緣部與基板載置台205之上面周緣部接觸。藉此,在基板載置台205之周緣部,呈已後退至氣體供給部207b側之收容部211b內部的分隔部204c與基板載置台205間形成有連通路之狀態。換言之,呈使分隔部204b之排氣口關閉,且使分隔部204c之排氣口開放之狀態。在該狀態下,由氣體供給部207進行預定氣體之供給,並以原子層成長法進行對基板W上之薄膜形成。After the film forming chamber 202 and the lower exhaust chamber 203 are decompressed to a predetermined pressure by the exhaust gas, the partition portion 204b is advanced by the operation of the driving portion 213a so that the lower peripheral edge portion of the partition portion 204b and the upper peripheral edge of the substrate mounting table 205 are formed. Contact. As a result, a peripheral portion of the substrate mounting table 205 is in a state in which a communication path is formed between the partition portion 204c that has been retracted to the inside of the accommodating portion 211b on the gas supply portion 207b side and the substrate mounting table 205. In other words, the exhaust port of the partition portion 204b is closed, and the exhaust port of the partition portion 204c is opened. In this state, the gas supply unit 207 supplies the predetermined gas, and the film formation on the substrate W is performed by the atomic layer growth method.
舉例言之,利用基板載置台205所具有的加熱機構205h,將基板W之溫度加熱至300℃左右,並如上述利用氣體供給部207a,對成膜室202之內部導入例如TMA氣體來作為原料氣體(吸附氣體),將原料氣體供給至基板W,並使基板W上吸附1層TMA分子。舉例言之,原料氣體可與Ar等惰性載體氣體一同供給。氣體供給部207a所導入之原料氣體會於基板W上流向氣體供給部207b之方向,並利用分隔部204c與基板載置台205間之連通路(第2排氣口),朝下部排氣室203側排氣。藉該原料氣體之供給,成膜室202之內部會到達壓力100Pa左右。原料氣體之供給進行約1~2秒。For example, the heating mechanism 205h of the substrate mounting table 205 is used to heat the temperature of the substrate W to about 300 ° C, and the gas supply unit 207 a is used to introduce, for example, TMA gas into the inside of the film forming chamber 202 as a raw material. The gas (adsorbed gas) supplies the raw material gas to the substrate W, and adsorbs one layer of TMA molecules on the substrate W. For example, the material gas may be supplied together with an inert carrier gas such as Ar. The material gas introduced by the gas supply unit 207a flows in the direction of the gas supply unit 207b on the substrate W, and passes through a communication path (second exhaust port) between the partition portion 204c and the substrate mounting table 205 toward the lower exhaust chamber 203. Side exhaust. By the supply of the material gas, the inside of the film forming chamber 202 reaches a pressure of about 100 Pa. The supply of the material gas is carried out for about 1 to 2 seconds.
接著,停止原料氣體之供給,藉排氣部209排氣,在利用分隔部204c與基板載置台205間之連通路使與下部排氣室203連通之成膜室202之內部排氣之狀態下,藉氣體供給部207a將例如Ar或氮等沖洗氣體供給至成膜室202之內部。而,在該沖洗中,亦可使分隔部204b後退來於基板載置台205與分隔部204b間形成連通路,在利用2個連通路使下部排氣室203與成膜室202連通之狀態下,進行成膜室102內之排氣。藉該沖洗,吸附於基板W以外的多餘氣體會由成膜室202去除。Then, the supply of the material gas is stopped, and the exhaust portion 209 is exhausted, and the inside of the film forming chamber 202 that communicates with the lower exhaust chamber 203 is exhausted by the communication path between the partition portion 204c and the substrate mounting table 205. The flushing gas such as Ar or nitrogen is supplied to the inside of the film forming chamber 202 by the gas supply unit 207a. In the flushing, the partition portion 204b may be retracted to form a communication path between the substrate mounting table 205 and the partition portion 204b, and the lower exhaust chamber 203 and the film forming chamber 202 may be connected by the two communication paths. The exhaust gas in the film forming chamber 102 is performed. By this flushing, excess gas adsorbed outside the substrate W is removed by the film forming chamber 202.
接著,在已藉排氣部209進行排氣之狀態下,與前述相同地,藉驅動部213a之動作使分隔部204b前進,使分隔部204b之下面周緣部與基板載置台205之上面周緣部接觸。另一方面,藉驅動部213b之動作使分隔部204c後退,使分隔部204c與基板載置台205間形成連通路。換言之,分隔部204b之排氣口呈關閉之狀態,而分隔部204c之排氣口則呈開放之狀態。Then, in the same state as described above, the partition portion 204b is advanced by the operation of the driving portion 213a, and the lower peripheral edge portion of the partition portion 204b and the upper peripheral portion of the substrate mounting table 205 are formed in the same manner as described above. contact. On the other hand, the partitioning portion 204c is retracted by the operation of the driving portion 213b, and a communication path is formed between the partition portion 204c and the substrate mounting table 205. In other words, the exhaust port of the partition portion 204b is in a closed state, and the exhaust port of the partition portion 204c is in an open state.
在該狀態下,利用氣體供給部207a對成膜室202之內部導入氧化氣體,藉此對基板W上供給氧化氣體,使吸附於基板W表面之分子與氧化氣體反應,於基板W表面形成1分子層份之氧化鋁薄膜。由氣體供給部207a導入之氧化氣體會於基板W上流向氣體供給部207b之方向,並藉分隔部204c與基板載置台205間之連通路,朝下部排氣室203側排氣。In this state, the gas supply unit 207a introduces an oxidizing gas into the inside of the film forming chamber 202, thereby supplying an oxidizing gas to the substrate W, and reacting the molecules adsorbed on the surface of the substrate W with the oxidizing gas to form a surface on the substrate W. Molecular layer of aluminum oxide film. The oxidizing gas introduced from the gas supply unit 207a flows in the direction of the gas supply unit 207b on the substrate W, and is exhausted toward the lower exhaust chamber 203 side by the communication path between the partition portion 204c and the substrate mounting table 205.
之後,與上述同樣地,藉Ar等惰性氣體沖洗成膜室202內部,將多餘氣體由反應室去除。將以上原料氣體之供給→沖洗→氧化氣體之供給→沖洗作為1個循環,並重複50個循環。Thereafter, in the same manner as described above, the inside of the film forming chamber 202 is rinsed with an inert gas such as Ar to remove excess gas from the reaction chamber. The supply of the above raw material gas → flushing → supply of oxidizing gas → flushing was performed as one cycle, and 50 cycles were repeated.
接著,在以排氣部209進行排氣之狀態下,藉驅動部213b之動作使分隔部204c前進,使其下面周緣部與基板載置台205之上面周緣部接觸,另一方面,藉驅動部213a之動作使分隔部204b後退,使分隔部204b與基板載置台205間形成連通路。換言之,分隔部204b之排氣口呈開放之狀態,而分隔部204c之排氣口則呈關閉之狀態。在該狀態下利用氣體供給部207b進行上述原料氣體及氧化氣體之導入,藉此重複原料氣體之供給→沖洗→氧化氣體之供給→沖洗50個循環。Then, in a state where the exhaust unit 209 is exhausted, the partition portion 204c is advanced by the operation of the driving portion 213b, and the lower peripheral edge portion is in contact with the upper peripheral edge portion of the substrate mounting table 205, and the driving portion is driven. In the operation of 213a, the partition portion 204b is retracted, and a communication path is formed between the partition portion 204b and the substrate stage 205. In other words, the exhaust port of the partition portion 204b is in an open state, and the exhaust port of the partition portion 204c is in a closed state. In this state, the introduction of the source gas and the oxidizing gas is performed by the gas supply unit 207b, whereby the supply of the material gas, the flushing, the supply of the oxidizing gas, and the flushing are repeated for 50 cycles.
如此,先使分隔部204b前進而分隔部204c後退,藉此使分隔部204c與基板載置台205間形成有連通路(第2排氣口開放),在該狀態下,以氣體供給部207a進行氣體之供給50個循環。接著,使分隔部204c前進而分隔部204b後退,藉此使分隔部204b與基板載置台205間形成有連通路(第1排氣口開放),在該狀態下,以氣體供給部207b切換氣體之供給50個循環。藉著合計該等100個循環,可形成膜厚為10nm左右之氧化鋁薄膜。In this manner, the partition portion 204b is advanced and the partition portion 204c is retracted, whereby a communication path (the second exhaust port is opened) is formed between the partition portion 204c and the substrate mounting table 205. In this state, the gas supply portion 207a is used. The supply of gas is 50 cycles. Then, the partition portion 204c is advanced and the partition portion 204b is retracted, whereby a communication path is formed between the partition portion 204b and the substrate mounting table 205 (the first exhaust port is opened), and in this state, the gas is switched by the gas supply portion 207b. It is supplied for 50 cycles. By a total of 100 cycles, an aluminum oxide film having a film thickness of about 10 nm can be formed.
依據本實施例之薄膜形成裝置,在一開始的50個循環產生的流動方向之分布會因接著的50個循環產生的流動方向之分布而抵銷,因此膜厚會以均勻之狀態形成。舉例言之,不切換氣體供給狀態而重複300個循環左右來進行上述原子層成長之成膜時,氣體供給部(氣體供給口)附近與距離此靠排氣側約400mm處,膜厚約會產生3nm左右之分布。相對於此,依據本實施例,可獲得氣體流動方向之膜厚分布約為1nm左右之狀態。而,上述說明中,雖以50個循環切換,但並未受限於此,當然亦可每1個循環切換,或每2個循環切換。According to the thin film forming apparatus of the present embodiment, the distribution of the flow direction generated in the first 50 cycles is offset by the distribution of the flow direction generated by the subsequent 50 cycles, so that the film thickness is formed in a uniform state. For example, when the film formation is performed by repeating about 300 cycles without switching the gas supply state, the vicinity of the gas supply portion (gas supply port) and the distance from the exhaust side are about 400 mm, and the film thickness is generated. Distribution around 3nm. On the other hand, according to the present embodiment, a state in which the film thickness distribution in the gas flow direction is about 1 nm can be obtained. However, in the above description, although switching is performed in 50 cycles, it is not limited thereto, and of course, it may be switched every one cycle or every two cycles.
[實施例3][Example 3]
接著,說明本發明之實施例3。第5圖及第6圖係擴大顯示本發明實施例3之薄膜形成裝置構成的部分構成之剖面圖。首先,該薄膜形成裝置具有分隔部304b及分隔部304c,該分隔部304b及分隔部304c係配置於成膜室202及下部排氣室203之交界位置,並以該位置為基準位置,由下部排氣室203朝成膜室202之方向(上下方向)移動。在成膜室202及下部排氣室203之交界位置,分隔部(第1分隔部)304b係配置於基板載置台205之氣體供給部207a側(第1側部側)與裝置本體201之內部側面間。另一方面,分隔部(第2分隔部)304c係配置於基板載置台205之氣體供給部207b側(第2側部側)與裝置本體201之內部側面間。Next, a third embodiment of the present invention will be described. Fig. 5 and Fig. 6 are sectional views showing a part of the configuration of a film forming apparatus according to a third embodiment of the present invention. First, the film forming apparatus includes a partition portion 304b and a partition portion 304c. The partition portion 304b and the partition portion 304c are disposed at a boundary position between the film forming chamber 202 and the lower exhaust chamber 203, and the position is used as a reference position. The exhaust chamber 203 moves in the direction (up and down direction) of the film forming chamber 202. The partition portion (first partition portion) 304b is disposed on the gas supply portion 207a side (the first side portion side) of the substrate mounting table 205 and the inside of the apparatus body 201 at the boundary between the film forming chamber 202 and the lower exhaust chamber 203. Between the sides. On the other hand, the partition portion (second partition portion) 304c is disposed between the gas supply portion 207b side (the second side portion side) of the substrate stage 205 and the inner side surface of the apparatus body 201.
分隔部304b透過連結部312a連結於驅動部311a,藉驅動部311a之動作,可朝上下方向移動。又,分隔部304c透過連結部312b連結於驅動部311b,藉驅動部311b之動作,可朝上下方向移動。又,連結部312a中,一端(上端)與分隔部304b連接之部分係收容於可伸縮之管313a,保護該領域之裝置本體201內部之真空狀態。同樣地,連結部302b中,一端(上端)與分隔部304c連接之部分係收容於可伸縮之管313b,保護該領域之裝置本體201內部之真空狀態。而,其它構成與以第2圖說明之薄膜形成裝置相同,因此省略說明。The partition portion 304b is coupled to the drive portion 311a via the connection portion 312a, and is movable in the vertical direction by the operation of the drive portion 311a. Further, the partition portion 304c is coupled to the drive portion 311b via the connection portion 312b, and is movable in the vertical direction by the operation of the drive portion 311b. Further, in the connecting portion 312a, the portion where the one end (upper end) and the partition portion 304b are connected is housed in the stretchable tube 313a, and the vacuum state inside the apparatus body 201 in the field is protected. Similarly, in the connection portion 302b, the portion where the one end (upper end) is connected to the partition portion 304c is housed in the telescopic tube 313b, and the vacuum state inside the device body 201 in the field is protected. The other configuration is the same as that of the thin film forming apparatus described with reference to Fig. 2, and therefore the description thereof will be omitted.
本實施例之薄膜形成裝置中,首先,利用驅動部311a之動作,使分隔部304b朝下方(下部排氣室203之方向)移動,藉此可使基板載置台205之周緣部與分隔部304b之下面接觸(請參考第5圖之薄膜形成裝置之左側部分501的狀態)。這在驅動部311b所驅動之分隔部304c中亦相同(請參考第6圖之薄膜形成裝置之右側部分502的狀態)。In the film forming apparatus of the present embodiment, first, the partition portion 304b is moved downward (in the direction of the lower exhaust chamber 203) by the operation of the driving portion 311a, whereby the peripheral portion of the substrate mounting table 205 and the partition portion 304b can be made. The lower contact is made (please refer to the state of the left side portion 501 of the film forming apparatus of Fig. 5). This is also the same in the partition portion 304c driven by the driving portion 311b (please refer to the state of the right side portion 502 of the film forming apparatus of Fig. 6).
另一方面,利用驅動部311a之動作,使分隔部304b朝上方(成膜室202之方向)移動,藉此可使基板載置台205與分隔部304b分開,呈基板載置台205與分隔部304b間形成有一連通成膜室202與下部排氣室203之連通路的狀態(請參考第6圖之薄膜形成裝置之左側部分501的狀態)。這在驅動部311b所驅動之分隔部304c中亦相同(請參考第5圖之薄膜形成裝置之右側部分502的狀態)。On the other hand, by the operation of the driving unit 311a, the partition portion 304b is moved upward (in the direction of the film forming chamber 202), whereby the substrate mounting table 205 and the partition portion 304b can be separated to form the substrate mounting table 205 and the partition portion 304b. A state in which a communication path between the film forming chamber 202 and the lower exhaust chamber 203 is formed is formed (refer to the state of the left side portion 501 of the film forming apparatus of Fig. 6). This is also the same in the partition portion 304c driven by the driving portion 311b (please refer to the state of the right side portion 502 of the film forming apparatus of Fig. 5).
如以上所說明,本實施例之薄膜形成裝置中,首先,如第5圖所示,由氣體供給部207a導入氣體時,利用驅動部311a之動作使分隔部304b下降(請參考左側部分501之狀態),並利用驅動部311b之動作使分隔部304c上升(請參考右側部分502之狀態)。該狀態下,分隔部304c與基板載置台205間會形成連通路,並藉該連通路使成膜室202與已藉排氣部209排氣之下部排氣室203連通。As described above, in the film forming apparatus of the present embodiment, first, as shown in FIG. 5, when the gas is introduced from the gas supply unit 207a, the partition portion 304b is lowered by the operation of the driving portion 311a (please refer to the left portion 501). In the state), the partition portion 304c is raised by the operation of the driving portion 311b (please refer to the state of the right portion 502). In this state, a communication path is formed between the partition portion 304c and the substrate mounting table 205, and the film forming chamber 202 communicates with the exhausted portion 203 of the exhausted portion 209 and the exhaust portion 203.
故,氣體供給部207a所導入之氣體會在載置於基板載置台205之基板W上朝分隔部304c(氣體供給部207b)側流動,並如右側部分502之箭頭所示,通過分隔部304c與基板載置台205間之連通路,朝下部排氣室203側排氣。換言之,本實施例之薄膜形成裝置中,氣體供給部207b(分隔部304c)側(第2側部側)之基板載置台205與裝置本體201之內部側面間,具有可藉分隔部304c之移動而開關的排氣口(第2排氣口)。Therefore, the gas introduced by the gas supply unit 207a flows toward the partition portion 304c (gas supply portion 207b) on the substrate W placed on the substrate stage 205, and passes through the partition portion 304c as indicated by the arrow of the right portion 502. The communication path with the substrate stage 205 is exhausted toward the lower exhaust chamber 203 side. In other words, in the film forming apparatus of the present embodiment, the substrate mounting table 205 on the gas supply portion 207b (partition portion 304c) side (the second side portion side) and the inner side surface of the apparatus main body 201 are movable by the partition portion 304c. The exhaust port of the switch (second exhaust port).
相對於此,如第6圖所示,利用驅動部311a之動作使分隔部304b上升(請參考左側部分501之狀態),並利用驅動部311b之動作使分隔部304c下降(請參考右側部分502之狀態)。該狀態下,分隔部304b與基板載置台205間會形成連通路,並藉該連通路使成膜室202與排氣部209所排氣之下部排氣室203連通。On the other hand, as shown in FIG. 6, the partition portion 304b is raised by the operation of the driving portion 311a (refer to the state of the left portion 501), and the partition portion 304c is lowered by the operation of the driving portion 311b (please refer to the right portion 502). State). In this state, a communication path is formed between the partition portion 304b and the substrate mounting table 205, and the film forming chamber 202 communicates with the exhaust portion 203 of the exhaust portion of the exhaust portion 209 by the communication passage.
故,氣體供給部207b所導入之氣體會在載置於基板載置台205之基板W上朝分隔部304b(氣體供給部207a)側流動,並如左側部分501之箭頭所示,通過分隔部304b與基板載置台205間之連通路,朝下部排氣室203側排氣。因此,此時,氣體供給部207b(分隔部304b)側(第1側部側)之基板載置台205與裝置本體201之內部側面間,具有可藉分隔部304b之移動而開關的排氣口(第1排氣口)。Therefore, the gas introduced by the gas supply unit 207b flows toward the partition portion 304b (gas supply portion 207a) on the substrate W placed on the substrate stage 205, and passes through the partition portion 304b as indicated by the arrow of the left portion 501. The communication path with the substrate stage 205 is exhausted toward the lower exhaust chamber 203 side. Therefore, at this time, between the substrate mounting table 205 on the gas supply portion 207b (partition portion 304b) side (the first side portion side) and the inner side surface of the apparatus main body 201, there is an exhaust port that can be opened and closed by the movement of the partition portion 304b. (first exhaust port).
如上所述,本實施例之薄膜形成裝置中,與前述實施例2相同地,可切換上述2個狀態來反轉因氣體流動而形成於基板W上之膜(膜厚)分布。藉此,本實施例之薄膜形成裝置也可與前述實施例2相同地,更均勻地形成膜。As described above, in the thin film forming apparatus of the present embodiment, as in the second embodiment, the two states can be switched to reverse the distribution of the film (film thickness) formed on the substrate W due to the gas flow. Thereby, the film forming apparatus of the present embodiment can form the film more uniformly as in the foregoing embodiment 2.
而,以上說明中,係以裝置本體內部由成膜室構成之情形,以及裝置本體內部由成膜室與下部排氣室構成之情形為例進行說明,但並未受限於此。裝置本體之內部在可區隔成膜室及下部排氣室之狀態下,可具有基板交換室及進行其它處理之處理室等。In the above description, the case where the inside of the apparatus main body is constituted by the film forming chamber and the inside of the apparatus main body are constituted by the film forming chamber and the lower exhaust chamber will be described as an example, but the invention is not limited thereto. The inside of the apparatus main body may have a substrate exchange chamber and a processing chamber for performing other processing in a state in which the film forming chamber and the lower exhaust chamber are partitioned.
又,以上實施例中,已說明基板載置台105、205具有加熱機構105h、205h之情形。惟,當改變氣體之組合而可在例如20℃~25℃左右之常溫成膜時,便不需加熱機構105h、205h。Further, in the above embodiment, the case where the substrate stages 105 and 205 have the heating mechanisms 105h and 205h has been described. However, when the combination of gases is changed to form a film at a normal temperature of, for example, about 20 ° C to 25 ° C, the heating mechanisms 105 h and 205 h are not required.
又,本說明書中,對於上下之關係,當以基板載置台105、205為基準時,將相對向載置面之側定義為「上」,並將其相反側定義為「下」。故,位於基板載置台105、205上之成膜室102、202可稱「形成於基板載置台105、205之載置面側」,位於基板載置台105、205下之下部排氣室103、203則可稱「設於與基板載置台105、205之載置面相反之側」。又,「上下方向」可定義為「與基板載置台105、205之載置面垂直相交之方向」。In the present specification, when the substrate mounting stages 105 and 205 are used as the reference, the side to the mounting surface is defined as "upper" and the opposite side is defined as "lower". Therefore, the film forming chambers 102 and 202 located on the substrate mounting tables 105 and 205 can be said to be "formed on the mounting surface side of the substrate mounting tables 105 and 205", and are located below the substrate mounting tables 105 and 205 and below the exhaust chamber 103. 203 can be said to be "on the side opposite to the mounting surface of the substrate mounting stages 105, 205". Further, the "up and down direction" can be defined as "a direction perpendicular to the mounting surface of the substrate stages 105, 205".
101...裝置本體101. . . Device body
102...成膜室102. . . Film forming chamber
103...下部排氣室103. . . Lower exhaust chamber
104...壓框104. . . Press frame
105...基板載置台105. . . Substrate mounting table
105h...加熱機構105h. . . Heating mechanism
106...載置台支撐部106. . . Mounting table support
107a、107b...氣體供給部107a, 107b. . . Gas supply department
108...成膜室排氣部108. . . Film forming chamber exhaust
108a、108b...排氣口108a, 108b. . . exhaust vent
109...排氣通路109. . . Exhaust passage
110a、110b...閥110a, 110b. . . valve
111...排氣部111. . . Exhaust department
112...閥112. . . valve
201...裝置本體201. . . Device body
202...成膜室202. . . Film forming chamber
203...下部排氣室203. . . Lower exhaust chamber
204a~204c...分隔部204a~204c. . . Separator
205...基板載置台205. . . Substrate mounting table
205h...加熱機構205h. . . Heating mechanism
206...載置台支撐部206. . . Mounting table support
207a、207b...氣體供給部207a, 207b. . . Gas supply department
209...排氣部209. . . Exhaust department
211a、211b...收容部211a, 211b. . . Containment department
212a、212b...連結部212a, 212b. . . Linkage
213a、213b...驅動部213a, 213b. . . Drive department
201...裝置本體201. . . Device body
202...成膜室202. . . Film forming chamber
203...下部排氣室203. . . Lower exhaust chamber
204a~204c...分隔部204a~204c. . . Separator
205...基板載置台205. . . Substrate mounting table
206...載置台支撐部206. . . Mounting table support
207a、207b...氣體供給部207a, 207b. . . Gas supply department
208a、208b...排氣口208a, 208b. . . exhaust vent
209...排氣部209. . . Exhaust department
211a、211b...收容部211a, 211b. . . Containment department
212a、212b...連結部212a, 212b. . . Linkage
213a、213b...驅動部213a, 213b. . . Drive department
301‧‧‧左側部分 301‧‧‧left part
302‧‧‧右側部分 302‧‧‧ right part
303‧‧‧載置面 303‧‧‧Loading surface
304a~304c‧‧‧分隔部 304a~304c‧‧‧Department
311a、311b‧‧‧驅動部 311a, 311b‧‧‧ drive department
312a、312b‧‧‧連結部 312a, 312b‧‧‧ link
313a、313b‧‧‧可伸縮之管 313a, 313b‧‧‧ telescopic tube
W‧‧‧基板 W‧‧‧Substrate
501‧‧‧左側部分 501‧‧‧left part
502‧‧‧右側部分502‧‧‧ right part
第1圖係概略顯示本發明實施例1之薄膜形成裝置構成例的剖面圖。Fig. 1 is a cross-sectional view schematically showing an example of the configuration of a film forming apparatus according to a first embodiment of the present invention.
第2圖係概略顯示本發明實施例2之薄膜形成裝置構成例的剖面圖。Fig. 2 is a cross-sectional view schematically showing an example of the configuration of a film forming apparatus according to a second embodiment of the present invention.
第3圖係用以說明本發明實施例2之薄膜形成裝置動作的部分擴大圖及平面圖。Fig. 3 is a partially enlarged plan view and a plan view for explaining the operation of the thin film forming apparatus of the second embodiment of the present invention.
第4圖係用以說明本發明實施例2之薄膜形成裝置動作的部分擴大圖及平面圖。Fig. 4 is a partially enlarged plan view and a plan view for explaining the operation of the thin film forming apparatus of the second embodiment of the present invention.
第5圖係用以說明本發明實施例3之薄膜形成裝置構成及動作的部分擴大圖。Fig. 5 is a partially enlarged view for explaining the configuration and operation of the thin film forming apparatus of the third embodiment of the present invention.
第6圖係用以說明本發明實施例3之薄膜形成裝置構成及動作的部分擴大圖。Fig. 6 is a partially enlarged view for explaining the configuration and operation of the thin film forming apparatus of the third embodiment of the present invention.
101...裝置本體101. . . Device body
102...成膜室102. . . Film forming chamber
103...下部排氣室103. . . Lower exhaust chamber
104...壓框104. . . Press frame
105...基板載置台105. . . Substrate mounting table
105h...加熱機構105h. . . Heating mechanism
106...載置台支撐部106. . . Mounting table support
107a、107b...氣體供給部107a, 107b. . . Gas supply department
108...成膜室排氣部108. . . Film forming chamber exhaust
108a、108b...排氣口108a, 108b. . . exhaust vent
109...排氣通路109. . . Exhaust passage
110a、110b...閥110a, 110b. . . valve
111...排氣部111. . . Exhaust department
112...閥112. . . valve
W...基板W. . . Substrate
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