TWI410520B - Chemical vapor deposition apparatus - Google Patents

Abstract

Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

Description

Chemical vapor deposition device [Reciprocal Reference of Related Applications]

The present application claims priority to Korean Patent Application No. 10-2007--0137715 filed on Dec. 26, 2007 to the Korean Intellectual Property Office and No. 10-2008-0096306 filed on September 30, 2008. Both cases are incorporated in this case for reference.

The present invention relates to a chemical vapor deposition apparatus for uniformly and stably growing a deposited layer on a surface of a wafer by supplying a reaction gas inward.

In general, Chemical Vapor Deposition (CVD) is an important method for growing various crystal layers on various substrates. CVD has advantages over liquid deposition methods in growing high quality crystalline layers; however, relatively low crystal growth rates are disadvantages of CVD. To overcome this disadvantage, a plurality of layers are simultaneously grown on a plurality of substrates during each cycle.

However, where multiple layers are simultaneously grown on a plurality of substrates, the substrates should be maintained at the same temperature and exposed to the same flow of reactant gases in order to maintain a uniform quality of the layers grown on the substrate.

Examples of methods that can be used for the above purposes include: a method of creating a uniform gas flow along a substrate using a plurality of injection tubes; radially arranging a plurality of substrates around the axis of rotation and rotating at the same A method of rotating all the substrates on the shaft (railing method); and a method of individually rotating a plurality of substrates (individual rotation method). These are in related fields The methods known in the art can be combined or used individually.

Aspects of the present invention provide a chemical vapor deposition apparatus which maintains a dense vapor reaction by maintaining a gas density in a chamber in a substantially uniform state and preventing an increase in process pressure even under process conditions in which a high temperature deposition layer is grown. High quality vapor deposition is obtained.

According to an aspect of the present invention, there is provided a chemical vapor deposition apparatus comprising: a reaction chamber comprising a susceptor and a reaction furnace, wherein the susceptor is loaded with a wafer and the reaction furnace is subjected to a chemical vapor phase Depositing processing of the wafer; a gas introduction unit disposed on an outer wall of the reaction chamber for supplying a reaction gas from a outside of the reaction furnace to a central portion of the reaction furnace; and a gas discharge unit configured to The central portion of the reaction chamber is used to discharge the reaction gas to the upper side or the lower side of the reaction chamber after the reaction gas is used in the reaction in the reaction furnace.

The chemical vapor deposition apparatus may further include a flow control unit disposed between the gas introduction unit and the gas discharge unit to cause a uniform gas flow from the gas introduction unit to the gas discharge unit.

The chemical vapor deposition apparatus may further include a driving unit that provides rotational power to rotate the susceptor in one direction.

The chemical vapor deposition apparatus can include a heating unit disposed adjacent to the susceptor for providing heat to the susceptor.

The flow control unit may include: a barrier member disposed on the The outer side of the reaction furnace is used to define a reaction furnace in the reaction chamber, and a reaction gas supplied from the gas introduction unit is introduced into the reaction furnace while adjusting a pressure of the reaction gas; and at least one gas chamber is disposed at the A reaction gas supplied from the gas introduction unit is stored between the outer wall of the reaction chamber and the barrier wall member, and the reaction gas is supplied through the barrier wall member.

When a plurality of gas chambers are installed, the chemical vapor deposition apparatus may further comprise at least one distinguishing member for separating the plurality of gas chambers.

The chemical vapor deposition apparatus may further include a vortex prevention unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce a distance between the susceptor and the reaction chamber toward the gas introduction unit.

The flow control unit may include: a slope blocking barrier disposed on an outer side of the reaction furnace, the barrier wall is configured to define a reaction furnace in the reaction chamber, and introduce a reaction gas supplied from the gas introduction unit into the reaction furnace, Simultaneously adjusting the pressure of the reaction gas, the inclined barrier wall is inclined at a predetermined angle; and a plurality of gas chambers disposed between the outer wall of the reaction chamber and the inclined barrier wall for storing and supplying from the gas a reaction gas of the unit and supplying the reaction gas through the inclined barrier wall; and at least one distinguishing member for separating the gas chambers.

The chemical vapor deposition apparatus may further include a vortex prevention unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce a distance between the susceptor and the reaction chamber toward the gas introduction unit.

The flow control unit may include: a plurality of gas chambers disposed in the reaction chamber; at least one distinguishing member for separating the gas chambers, And the gas chambers have different lengths and are stepped; and a plurality of different barrier walls disposed at end portions of the gas chambers for separating the reaction gases supplied from the gas introduction unit Introduced into the reaction furnace while adjusting the pressure of the reaction gas; wherein the gas chambers are disposed between the outer wall of the reaction chamber and the different barrier walls for storing and passing the reaction gas supplied from the gas introduction unit The barrier wall is supplied to the reaction gas.

The chemical vapor deposition apparatus may further include a vortex prevention unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce a distance between the susceptor and the reaction chamber toward the gas introduction unit.

The chemical vapor deposition apparatus may further include a plurality of parallel guiding members disposed on the different barrier walls in a substantially horizontal direction for guiding the flow of the reaction gas.

The gas introduction unit may include a plurality of gas supply lines in communication with the gas chambers for supplying different gases to the gas chambers.

The driving unit may include: a driven gear formed on an outer surface of the susceptor; a driving gear meshed with the driven gear; and a rotary motor disposed at an end of a driving shaft that rotates the driving gear to provide rotational power.

The chemical vapor deposition apparatus may further include a shaft disposed at a central portion of the susceptor for rotating the susceptor, the shaft including a gas discharge unit located in the shaft, wherein the drive unit includes: a driven gear disposed on the susceptor a driving gear meshed with the driven gear; and a rotary motor disposed at an end of the driving shaft that rotates the driving gear.

The gas discharge unit may include: a vent hole formed at a top portion of the reaction chamber or a central portion of the susceptor; and an exhaust line communicating with the vent hole.

Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

The chemical vapor deposition apparatus of the present invention can be applied to any chemical vapor deposition apparatus for depositing a thin layer (film) on a target (e.g., a wafer) by a chemical reaction.

1 is a perspective view showing a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a side sectional view showing a chemical vapor deposition apparatus of FIG. 1.

As shown in FIGS. 1 and 2, the chemical vapor deposition apparatus of the present embodiment includes a reaction chamber 10, a driving unit 20, a heating unit 30, a gas introduction unit 40, a gas discharge unit 50, and a flow rate control unit 60.

The reaction chamber 10 includes an internal space having a predetermined size as the reaction furnace 1, in which a chemical vapor reaction occurs between the introduced reaction gas and a deposition target (such as a wafer), and the insulating material can be configured. The inside of the reaction furnace 1 is used to protect the reaction furnace 1 from the damage of hot air.

The susceptor 14 is disposed inside the reaction chamber 10, and a plurality of pockets 15 are formed in the susceptor 14 for accommodating a plurality of wafers 2. That is, the susceptor 14 is disposed in the reaction furnace 1.

As shown in FIG. 2, the susceptor 14 has an outer diameter smaller than the outer diameter of the reaction chamber 10. The susceptor 14 is formed of a material such as graphite and has a dish shape. The shaft 16 coupled to the central portion of the reaction chamber 10 may be formed of a hollow tubular member having a venting opening 51. The vent hole 51 forms a gas exhaust passage.

The drive unit 20 provides rotational power such that the susceptor 14 on which the plurality of wafers 2 are loaded can be continuously rotated in one direction.

As shown in FIG. 2, the drive unit 20 includes a driven gear 21 which is located on the outer surface of the susceptor 14 as an integral part or a separate structure; and a drive gear 22 that meshes with the driven gear 21. The drive gear 22 is coupled to the end of the drive shaft 23 of the rotary motor 24, which generates a rotational force in response to the applied electric power.

In another embodiment shown in FIG. 4, the driving unit 20 may include: a driven gear 21a coupled to the shaft 16 as an integral portion or a separate structure; and a driving gear 22a meshing with the driven gear 21a. The shaft 16 can extend downward from the bottom of the susceptor 14 in a vertical direction. The drive gear 22a may be coupled to the end of the drive shaft 23a of the rotary motor 24a, which generates a rotational force in response to the applied electric power.

Due to this configuration, when the rotary motor 24 or 24a is operated, the susceptor 14 on which the wafer 2 is loaded can be driven by the driving gear 22 (22a) and the driven gear 21 (21a) by about 5 rpm to about 50 rpm. The fixed speed rotates in one direction.

The heating unit 30 is disposed adjacent to the bottom of the heating element 14, which is loaded with the wafer 2 and radiates thermal energy toward the susceptor 14 for indirectly heating the wafer 2.

The heating unit 30 may be one of an electronic heater, a high frequency induction heater, an infrared radiant heater, and a laser heater.

A temperature sensor (not shown) may be disposed within the reaction chamber 10 proximate the outer surface of the susceptor 14 or the location of the heating unit 30 to detect the internal temperature of the reaction chamber 10 for adjusting the heating temperature.

The gas introduction unit 40 is disposed at the outer wall 18 of the reaction chamber 10 to supply gas to the reaction chamber 10 for generating a gas flow from the outer wall of the reaction chamber 10 to the inner center of the reaction chamber 10.

The gas introduction unit 40 includes first to third gas introduction units 41, 42 and 43 for supplying different gases. For example, the first reaction gas may be supplied through the first gas introduction unit 41, and the second reaction gas may be supplied through the second and third gas introduction units 42 and 43.

The first and second reactive gases may be different or have a common composition. Alternatively, the same gas may be supplied through the first to third gas introduction units 41, 42 and 43, or three gases may be supplied through the first to third gas introduction units 41, 42 and 43, respectively. Various reaction gases may vary depending on the deposited layer to be formed on the target.

The gas discharge unit 50 is disposed at a central portion of the reaction chamber 10 for discharging a gas (exhaust gas) to the outside or below the reaction chamber 10 after the gas is used to grow a layer on the surface of the wafer 2, while supplying gas from the outside. It is to the center of the inside of the reaction furnace 1.

As shown in FIGS. 1 and 2, the gas discharge unit 50 is configured to discharge the reaction gas through the central portion of the bottom of the reaction chamber 10. Therefore, the gas row The discharge unit 50 may include an exhaust hole 51 formed in the shaft 16 coupled to the center of rotation of the susceptor 14 and an exhaust line 52 disposed at a lower end of the vent hole 51.

In another embodiment shown in FIGS. 3 and 4, the gas discharge unit 50 may include: a vent hole 51a formed through a central portion of the top of the reaction chamber 10, and a vent line connected to the vent hole 51a. 52a.

Therefore, when the reaction gas supplied from the outside of the reaction furnace 1 (that is, supplied via the outer wall 18) flows toward the center of the reaction chamber 10, the reaction gas reacts with the upper surface (deposition surface) of the wafer 2 to grow a layer on the crystal. On the surface of the circle 2. Thereafter, the reaction gas (exhaust gas) is discharged to the outside of the lower side of the reaction chamber 10 via the exhaust hole 51 of the shaft 16 disposed on the bottom side of the susceptor 14, or discharged to the exhaust hole 51a disposed on the top side of the reaction chamber 10 to the lower side. The outer side of the reaction chamber 10 is above.

The flow control unit 60 is for generating a uniform gas flow from the gas introduction unit 40 to the gas discharge unit 50. As shown in FIGS. 2 and 4, the flow control unit 60 includes a gas chamber and a barrier member 61.

The gas chamber has a predetermined size and is formed between the outer wall 18 of the reaction chamber 10 and the barrier member 61. The gas chamber is in communication with the gas introduction unit 40 to temporarily store the reaction gas and supply the reaction gas to the reaction furnace 1 via the barrier wall member 61.

As shown in Figures 2 and 4, a gas chamber or a plurality of gas chambers may be provided.

As shown in Figures 2 and 4, the chemical vapor deposition apparatus may comprise a gas chamber 11, a second gas chamber 12, and a third gas chamber 13, wherein the first gas chamber 11, the second gas chamber 12, and the third gas chamber 13 are respectively coupled to the first gas introduction unit 41 and the second gas introduction unit 42 And the third gas introduction unit 43 is in communication.

The barrier member 61 is vertically disposed toward the center of the reaction chamber 10 and spaced apart from the outer wall 18 (outermost side) of the reaction chamber 10 by a predetermined distance. Accordingly, the barrier member 61 is constructed from a plurality of cylindrical members that are continuously disposed around the outer wall 18 of the reaction chamber 10 and are disposed at a predetermined distance away from the outer wall 18.

The barrier rib member 61 may be formed of a porous body in which a reaction gas supplied from the gas introduction unit 40 is free to flow through the porous body.

The plurality of gas chambers 11, 12, and 13 can be separated by the distinguishing members 64a, 64b.

As shown in Fig. 5, when the reaction gas flows from the outside to the inner center of the reaction chamber 10, a non-uniform gas flow can be observed on the peripheral side of the reaction chamber 10, and the reaction gas is introduced through the reaction chamber 10.

When the susceptor 14 is loaded with the wafer 2 and heated to a high temperature by the heating unit 30, the non-uniform gas flow may be caused by thermal convection between the top surface of the susceptor 14 and the ceiling of the reaction chamber 10.

Due to the heat convection, the flow of the reaction gas is subjected to upward buoyancy, and thus the velocity of the reaction gas flow gradually increases from the outer side to the center of the reaction chamber 10. That is, the velocity of the reaction gas is relatively reversed on the peripheral side of the reaction chamber 10. The center of the chamber 10 is slow, thereby producing an uneven flow of air such as a vortex, which in turn causes an unstable reaction on the deposition surface of the wafer 2 and an unstable layer grown on the wafer 2.

Therefore, in order to minimize the occurrence of vortices or even to remove the possibility of generating vortices, the vortex prevention unit 70 can be disposed in the reaction chamber by gradually reducing the distance between the susceptor 14 and the reaction chamber 10 toward the gas introduction unit 40. 10 is in the surface facing the susceptor 14, as shown in Figures 6 and 7.

The vortex prevention unit 70 may be formed by projecting the ceiling inside the reaction chamber 10 toward the susceptor 14, or by attaching a material having a low heat transfer coefficient such as quartz to the ceiling inside the reaction chamber 10 in a detachable manner.

As shown in Fig. 6, the outer surface of the vortex prevention unit 70 facing the susceptor 14 may include a horizontal surface 71 parallel to the top surface of the susceptor 14, and an inclined surface 72 at a predetermined angle to the top surface of the susceptor 14. In another embodiment shown in FIG. 7, the vortex prevention unit 70 may include a curved surface 73 having a predetermined curvature.

In FIGS. 6 and 7, reference numeral 44 denotes a gas introduction hole of the first gas introduction unit 41 (refer to FIG. 1); reference numeral 45 denotes a gas introduction hole of the second gas introduction unit 42 (refer to FIG. 1). And reference numeral 46 denotes a gas introduction hole of the third gas introduction unit 43 (refer to Fig. 1).

The gas introduction holes 44, 45, and 46 are applied to the same in the same manner as The embodiment shown in Figures 8 through 11 is shown.

As shown in FIGS. 8 and 9, the flow control unit 60 may include a sloped barrier wall 62 that is inclined at a predetermined angle and distinguishing members 65a, 65b that are configured to be defined by the tilting resistance The gas chamber between the barrier rib 62 and the outer wall 18 is divided into first to third gas chambers 11, 12, and 13. In this manner, the flow control unit 60 can have a slanted configuration.

The inclined barrier wall 62 is inclined toward the center of the reaction chamber 10 and spaced apart from the outer wall 18 of the reaction chamber 10 by a predetermined distance. Accordingly, the inclined barrier walls 62 may be formed by a cylindrical member that continues along the periphery of the outer wall 18 of the reaction chamber 10 and is disposed at a predetermined distance away from the outer wall 18.

Similar to the barrier member 61, the inclined barrier rib 62 may be formed of a porous body through which the reaction gas supplied from the gas introduction unit 40 can freely flow.

Since the flow control unit 60 includes the inclined barrier wall 62 and the partition members 65a and 65b, the upper gas chamber (for example, the gas chamber 11) is longer than the lower gas chamber (for example, the gas chamber 13). Therefore, in the reaction furnace 1, the cold reaction gas can flow further in the upper side of the reaction furnace 1 than in the lower side of the reaction furnace 1, so that the heat convection can be suppressed and the gas flow can be stabilized and maintained uniform.

Figure 9 shows a chemical vapor deposition apparatus according to an embodiment of the present invention, the apparatus comprising: a tilt barrier 62 as shown in Fig. 8, a distinguishing member 65a and 65b and gas chambers 11, 12 and 13; and vortex prevention unit 70 as shown in Fig. 7.

By combining the flow control unit 60 and the vortex prevention unit 70 in this manner, the reaction gas can flow more uniformly in the reaction furnace 1.

In another embodiment shown in FIGS. 10 and 11, a plurality of gas chambers 11, 12, and 13 may be formed in a stepwise manner on the peripheral side of the reaction furnace 1, and the barrier walls 63a, 63b, and 63c may be different. The ends of the gas chambers 11, 12, and 13 are disposed to form a multi-stepped flow control unit 60.

In other words, the flow rate control unit 60 of the chemical vapor deposition apparatus of FIG. 10 includes a first gas chamber 11, a second gas chamber 12, and a third gas chamber 13, which is shorter than the first gas chamber 11. And recessed from the first gas chamber 11, the third gas chamber 13 is shorter than the second gas chamber 12 and is recessed from the second gas chamber 12.

Further, the first different barrier wall 63a is disposed at the end of the first gas chamber 11 facing the inside of the reaction furnace 1, and the second different barrier wall 63b is disposed at the second gas chamber facing the inside of the reaction furnace 1. The end of the third partitioning wall 63c is disposed at the end of the third gas chamber 13 facing the inside of the reaction furnace 1.

The gas chambers 11, 12, and 13 are separated by the division members 66a and 66b.

Due to the multi-stage structure of the flow control unit 60 described above, the upper gas chamber (for example, the gas chamber 11) is longer than the lower gas chamber (for example, the gas chamber 13). Therefore, in the reaction furnace 1, the cold reaction gas can flow further in the upper side of the reaction furnace 1 than in the lower side of the reaction furnace 1, so that the heat convection can be suppressed and the gas flow can be stabilized and maintained uniform.

Figure 11 shows a chemical vapor deposition apparatus according to an embodiment of the present invention, the apparatus comprising: the different barrier walls 63a, 63b and 63c, the partitioning members 66a, 66b and the gas chambers 11, 12 and 13 shown in Figure 10; And the vortex prevention unit 70 shown in Fig. 7.

By combining the flow control unit 60 and the vortex prevention unit 70 in this manner, the reaction gas can flow more uniformly in the reaction furnace 1.

Fig. 12 shows a guiding member and a circulation line attached to the flow control unit of Fig. 10 in accordance with an embodiment of the present invention.

Referring to Fig. 12, a plurality of guiding members 67 may be disposed in the gas flow direction to distinguish the barrier walls 63a, 63b, and 63c to guide the airflow toward the inside of the reaction furnace 1.

Since the guiding member 67 guides the airflow to a predetermined length, the airflow can be uniform. When the airflow is downward, the length of the guiding member 67 can be reduced.

As shown in Fig. 12, a circulation line 68 may be disposed on the outer sides of the gas chambers 11, 12, and 13 to allow coolant to flow along the outer wall 18 of the reaction chamber 10 for cooling the reaction chamber 10.

The barrier rib member 61, the inclined barrier rib 62, and the discrimination barrier walls 63a, 63b, and 63c (hereinafter, referred to as a barrier rib) are porous so that the reaction gas can freely flow through the barrier rib. The barrier wall can be composed of a plurality of thin A porous medium M of fine holes is formed as shown in Fig. 13A.

Alternatively, as shown in Fig. 13B, the barrier wall may be formed of a thin plate P on which a plurality of holes penetrating the thin plate P and having the same inner diameter or different inner diameters are formed to allow free flow of the reaction gas.

Alternatively, as shown in FIGS. 13C and 13D, the barrier wall may be formed by a thin plate P on which a plurality of horizontal slits S1 or vertical slits S2 penetrating the thin plate P are formed to allow free flow of the reaction gas. through.

Alternatively, as shown in Fig. 13E, the barrier wall may be formed by the vertical rod P1 and the horizontal rod P2 and have a predetermined size interval S defined by the vertical rod P1 and the horizontal rod P2, the horizontal rod P2 being at a right angle or predetermined The angle runs through the horizontal rod P1.

According to an embodiment of the present invention, deposition as follows can be performed in a chemical vapor deposition apparatus. The deposition target such as wafer 2 is loaded in a container 15 disposed in the susceptor 14 of the reaction chamber 10.

After the wafer 2 is loaded, power is supplied to the heating unit 30 near the susceptor 14, and then the heating unit 30 radiates thermal energy toward the susceptor 14 so that the wafer 2 is heated to about 700 ° C to about 1200 ° C while the interior of the reaction chamber 10 is maintained. At high temperatures.

Referring to Fig. 2, the rotary motor 24 is operated to rotate the drive gear, and the drive gear 22 meshes with the driven gear 21 formed on the susceptor 14. Alternatively, as shown in Fig. 4, the rotary motor 24a is operated to rotate the drive gear 22a, which meshes with the driven gear 21a of the shaft 16 of the susceptor 14. In this manner, the susceptor 14 is rotated in one direction.

In this state, the reaction gas system is supplied through the gas introduction unit 40 connected to the outer wall 18 of the reaction chamber 10. As shown in FIGS. 1 to 4, the supplied reaction gas temporarily stays in the gas chambers 11, 12, and 13, which are defined in the outer wall 18 of the reaction chamber 10 and spaced apart from the outer wall 18 by a predetermined distance. Between the flow control units 60. Then, the reaction gas flows into the inside of the reaction chamber 10 through the barrier member 61 formed of the porous body in a laminar flow.

That is, when the gas stream of the reaction gas passes through the control unit 60, the gas stream of the reaction gas becomes layered so that the laminar flow of the reaction gas can be formed in the outer to central direction of the reaction chamber 10.

At this time, the reaction gas supplied from the outside of the reaction chamber 10 is subjected to buoyancy caused by thermal convection between the top surface of the susceptor 14 heated to a high temperature and the ceiling of the reaction chamber 10, and thus the gas flow of the reaction gas will Become unstable.

To prevent this, as shown in FIGS. 6 and 7, the chemical vapor deposition apparatus of the present invention includes a vortex preventing unit 70 interposed between the barrier member 61 and the ceiling of the reaction chamber 10 for facing The gas introduction unit 40 gradually reduces the distance between the susceptor 14 and the reaction chamber 10, so that the flow of the reaction gas can be stabilized and kept uniform.

As shown in Figures 8 and 9, the flow control unit 60 may have a slanted shape, or as shown in Figures 10 and 11, the flow control unit 60 may have a multi-step shape to allow cold air to react. The upper inner side of the furnace 1 can flow further than the lower inner side of the reaction furnace 1. herein In the case, heat convection can be suppressed, and the flow of the reaction gas can be stabilized and kept uniform.

The reaction gas supplied to the central portion of the reaction chamber 10 through the flow control unit 60 disposed on the peripheral side of the reaction chamber 10 reacts with the top surface (deposition surface) of the wafer 2 for uniform deposition on the wafer by chemical deposition A layer is grown on the top surface of 2. Thereafter, the reaction gas (exhaust gas) together with the by-product is discharged from the central portion of the reaction chamber 10 through the upper or lower side of the reaction chamber 10 to the outside of the reaction chamber 10.

That is, in the case where the shaft 16 disposed on the bottom side of the susceptor 14 is formed by a hollow tube having a vent hole 51 connected to the exhaust line 52 (as shown in FIGS. 1 and 2), The exhaust gas is discharged from the central portion of the reaction chamber 10 through the exhaust hole 51 and the exhaust line 52 to the lower side of the reaction chamber 10.

Alternatively, in the case where the vent hole 51a is formed at the top central portion of the reaction chamber 10 and connected to the exhaust line 52a (as shown in FIGS. 3 and 4), the intense heat caused by heating the susceptor 14 to the high temperature is caused. The exhaust gas is convectively and smoothly discharged from the central portion of the reaction chamber 10 through the exhaust hole 51a and the exhaust line 52a to the upper side of the reaction chamber 10.

According to the chemical vapor deposition apparatus of the present invention, even when the process pressure is increased in order to deposit a deposition state of a high temperature deposition layer, the gas density in the chamber can maintain a substantially uniform state.

Further, the reaction gas system supplied to the peripheral side of the reaction chamber through the gas introduction unit connected to the outside of the reaction chamber is temporarily stored in the flow control unit, and then supplied to the central portion of the reaction chamber to prevent or remove gas. The vortex generated by the heat convection caused by the surface of the heating susceptor to the high temperature is minimized in the vicinity of the body introduction unit. Further, the exhaust gas can be discharged from the reaction chamber to the upper side or the lower side of the reaction chamber. Therefore, the uniformity of the gas flow can be improved, and a dense steam reaction inside the reaction chamber can be prevented. Thus, a uniformly grown high quality deposited layer can be fabricated on the wafer.

Although the present invention has been described in connection with the exemplary embodiments, it will be understood by those of ordinary skill in the art Defining the spirit and the standard.

1‧‧‧Reaction furnace

2‧‧‧ wafer

10‧‧‧Reaction room

11, 12, 13‧ ‧ gas chamber

14‧‧‧ susceptor (heating element)

15‧‧‧ Container

16‧‧‧Axis

18‧‧‧ outer wall

20‧‧‧Drive unit

21, 21a‧‧‧ driven gear

22, 22a‧‧‧ drive gear

23, 23a‧‧‧ drive shaft

24, 24a‧‧‧Rotary motor

30‧‧‧heating unit

40‧‧‧ gas introduction unit

41‧‧‧First gas introduction unit

42‧‧‧Second gas introduction unit

43‧‧‧ Third gas introduction unit

44, 45, 46‧‧‧ gas introduction holes

50‧‧‧ gas emission unit

51, 51a‧‧‧ vents

52, 52a‧‧‧ exhaust line

60‧‧‧Flow Control Unit

61‧‧‧Resistance wall members

62‧‧‧Tilting barrier

63a, 63b, 63c‧‧ ‧ distinguish barrier walls

64a, 64b‧‧‧ distinguishing components

65a, 65b‧‧‧ distinguishing components

66a, 66b‧‧‧ distinguishing components

67‧‧‧Guide members

68‧‧‧Circular line

70‧‧‧Vortex prevention unit

71‧‧‧ horizontal surface

72‧‧‧Sloping surface

73‧‧‧ Surface

M‧‧‧Porous medium

P‧‧‧thin sheet

P1‧‧‧ vertical rod

P2‧‧‧ horizontal pole

S‧‧‧slit (pitch)

S1‧‧‧ horizontal slit

S2‧‧‧ vertical slit

The above and other aspects, features, and other advantages of the present invention will be more clearly understood from the aspects of the appended claims. 2 is a side cross-sectional view showing the chemical vapor deposition apparatus of FIG. 1; FIG. 3 is a schematic view showing a chemical vapor deposition apparatus according to another embodiment of the present invention; and FIG. 4 is a view showing FIG. A side cross-sectional view of a chemical vapor deposition apparatus; FIG. 5 is a schematic view showing a vortex that can be generated in a reaction chamber of the chemical vapor deposition apparatus of the present invention; and FIG. 6 is a view showing an embodiment according to the present invention. A schematic diagram of a flow control unit and a vortex prevention unit in a chemical vapor deposition apparatus; and FIG. 7 is a view showing a chemical gas contained in another embodiment according to the present invention. FIG. 8 is a view showing a flow control unit included in a chemical vapor deposition apparatus according to another embodiment of the present invention; FIG. 9 is a view showing a flow control unit and a vortex prevention unit in a phase deposition apparatus; a chemical vapor deposition apparatus comprising the vortex prevention unit of FIG. 7 and the flow control unit of FIG. 8; and FIG. 10 is a flow control unit for inclusion in a chemical vapor deposition apparatus according to still another embodiment of the present invention. Figure 11 is a chemical vapor deposition apparatus showing the vortex prevention unit of Fig. 7 and the flow control unit of Fig. 10; Fig. 12 is a view showing an embodiment according to the present invention attached to Fig. 10 A plurality of guiding members of the flow control unit and a plurality of circulation lines; FIGS. 13A to 13E are diagrams showing an example of a barrier wall of the chemical vapor deposition apparatus according to an embodiment of the present invention.

10‧‧‧Reaction room

16‧‧‧Axis

18‧‧‧ outer wall

40‧‧‧ gas introduction unit

41‧‧‧First gas introduction unit

42‧‧‧Second gas introduction unit

43‧‧‧ Third gas introduction unit

50‧‧‧ gas emission unit

52‧‧‧Exhaust line

60‧‧‧Flow Control Unit

61‧‧‧Resistance wall members

64a, 64b‧‧‧ distinguishing components

Claims (16)

A chemical vapor deposition apparatus comprising: a reaction chamber comprising a susceptor and a reaction furnace, wherein the susceptor carries a wafer, wherein the wafer is processed by chemical vapor deposition; the gas introduction unit is configured The outer wall of the reaction chamber is for supplying a reaction gas from the outside of the reaction furnace to a central portion of the reaction furnace; and a gas discharge unit is disposed at a central portion of the reaction chamber for the reaction gas to be used for the The reaction gas in the reaction furnace is discharged to the upper side or the lower side of the reaction chamber, wherein the gas discharge unit is disposed at a top intermediate portion of the reaction chamber or a central portion of the susceptor. A chemical vapor deposition apparatus according to claim 1, further comprising a flow control unit disposed between the gas introduction unit and the gas discharge unit to cause a uniform gas flow from the gas introduction unit to the gas discharge unit. A chemical vapor deposition apparatus according to claim 2, further comprising a driving unit that provides rotational power to rotate the susceptor in one direction. A chemical vapor deposition apparatus according to claim 2, further comprising a heating unit disposed adjacent to the susceptor to provide heat to the susceptor. The chemical vapor deposition apparatus of claim 2, wherein the flow control unit comprises: a barrier member disposed on an outer side of the reactor to define the a reaction furnace in the reaction chamber, and introducing the reaction gas supplied from the gas introduction unit into the reaction furnace while adjusting the pressure of the reaction gas; and at least one gas chamber disposed on the outer wall of the reaction chamber The reactive gas supplied from the gas introduction unit is stored between the barrier member and supplied through the barrier member. A chemical vapor deposition apparatus according to claim 5, wherein, when a plurality of the gas chambers are provided, the chemical vapor deposition apparatus further comprises at least one distinguishing member for separating the plurality of gas chambers. A chemical vapor deposition apparatus according to claim 5, further comprising a vortex preventing unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce the susceptor and the reaction chamber toward the gas introduction unit The distance between them. The chemical vapor deposition apparatus of claim 2, wherein the flow control unit comprises: a sloped barrier wall disposed on an outer side of the reactor to define the reaction chamber in the reaction chamber, and is supplied from The reaction gas of the gas introduction unit is introduced into the reaction furnace while adjusting the pressure of the reaction gas, the inclined barrier wall is inclined at a predetermined angle; and a plurality of gas chambers disposed on the outer wall of the reaction chamber and the Between the inclined barrier walls, for storing the reaction gas supplied from the gas introduction unit and supplying the reaction gas through the inclined barrier wall; and at least one distinguishing member for separating the gas chambers. The chemical vapor deposition apparatus of claim 8, further comprising a vortex prevention unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce the susceptor and the reaction chamber toward the gas introduction unit The distance between them. The chemical vapor deposition apparatus of claim 2, wherein the flow control unit comprises: a plurality of gas chambers disposed in the reaction chamber; at least one distinguishing member for separating the gas chambers And the gas chamber has different lengths and is stepped; and the barrier wall is disposed at an end portion of the gas chamber for introducing the reaction gas supplied by the gas introduction unit into the reaction furnace And adjusting the pressure of the reaction gas, wherein the gas chamber is disposed between the outer wall of the reaction chamber and the different barrier wall for storing the reaction gas supplied by the gas introduction unit and passing through the different barrier wall. The gas should be reacted. A chemical vapor deposition apparatus according to claim 10, further comprising a vortex prevention unit disposed in the reaction chamber on a side facing the susceptor to gradually reduce the susceptor and the reaction chamber toward the gas introduction unit The distance between them. The chemical vapor deposition apparatus of claim 10, further comprising a plurality of parallel guiding members disposed on the different barrier walls in a substantially horizontal direction for guiding the flow of the reactive gas. A chemical vapor deposition apparatus according to claim 6 of the patent application, wherein The gas introduction unit includes a plurality of gas supply lines in communication with the gas chambers for supplying different gases to the gas chambers. The chemical vapor deposition apparatus of claim 3, wherein the driving unit comprises: a driven gear formed on an outer surface of the susceptor; a driving gear engaged with the driven gear; and a rotary motor It is disposed at the end of the drive shaft that rotates the drive gear to provide rotational power. A chemical vapor deposition apparatus according to claim 3, further comprising a shaft disposed in a central portion of the susceptor for rotating the susceptor, the shaft comprising a gas discharge unit located in the shaft, wherein the driving unit comprises: a driven gear disposed in the susceptor; a drive gear engaged with the driven gear; and a rotary motor disposed at an end of the drive shaft that rotates the drive gear. The chemical vapor deposition apparatus of claim 2, wherein the gas discharge unit comprises: a vent hole formed in an inner top end portion of the reaction chamber or a central portion of the susceptor; and an exhaust line It is in communication with the vent.