TWI400606B - Computing system for operation ratio of probing tester and computing method thereby - Google Patents

Description

Calculation system for probe detector operation ratio and calculation method thereof

The present invention relates to a probe detector operation ratio calculation system and a calculation method using the same. Specifically, it relates to a probe detector operation ratio calculation system and a method using the same that manages the operation state of the probe detector according to a specific operation item classification, and provides the operator with a detection time ratio of each operation cycle.

In general, the latter technique of a semiconductor element generally confirms the inspection of a material of a wafer (Wafer) defective product in which a semiconductor element is provided, and attaches a wafer in which a wafer is separated and separated to a wafer on a lead frame loading plate (Die Bonding technology, in which a metal wire is connected to a wafer pad provided on a semiconductor wafer and a wire bonding technique of a wire of a soldering frame, in order to protect the internal circuit and other structural components of the semiconductor wafer, the outer packaging is wrapped with a packaging material. Molding technology, the sturdy technique of cutting Dabar connecting wires and wires, and the Foaming technology for bending wires in a desired form, and testing techniques for testing the quality of semiconductor components subjected to the above techniques.

Here, in the case of detecting the above-mentioned raw material, in order to select only a high-quality product in the semiconductor element on the wafer, a probe which detects the quality of the probe by connecting the probe to the semiconductor element is widely used. An example of the above is described in detail in the Korean Patent Application No. 665,407.

The start time of the above probe detector is roughly divided into the operation of the starting device Time and non-operation time for downtime. The above operation time is for detecting the electrical quality of the semiconductor element on the wafer, or preparing the wafer and the detecting device, and the probe detector is in operation time.

The non-operation time is the time during which the probe detector or the non-detection material is stopped due to errors in various technologies, equipment failure, re-supply detection materials, input detection information, and the like.

The conventional probe detector operation ratio calculation system is an operation ratio for calculating the entire operation time of the probe detector described above, and supplies the value to the operator. When the period of each of the probe detectors exceeds the allowable range and is smaller than the average value of the above operation ratio, the external operator detects the probe for one cycle, detects the inefficiency and repairs.

A conventional probe detector operation ratio calculation system like this provides the operator with only the above-described operation ratio, so that it is difficult for the operator to recognize the cause of the inefficiency state of the probe detector described above.

That is, when the operator recognizes that there is a problem, it is impossible to specifically confirm the problem of the technical part. Therefore, there is a trouble in operating the above probe detector and detecting non-efficiency techniques.

Moreover, the above-described operation ratio provided by the conventional probe detector operation ratio calculation system includes the time for preparing the above wafer and the detection device in the above operation time. The operator cannot confirm these problems when there is a problem with the preparation of the above wafer and the test equipment.

That is, the conventional probe detector operation ratio calculation system has a problem in the technique of preparing the above-described wafer and inspection apparatus, and its technical time is extended to classify these into the above-described operation time, thereby displaying a high operation ratio. therefore, It is difficult for the operator to confirm the problems occurring in the technique of preparing the above wafer and the detecting device.

In order to solve the present invention as described above, it is an object of the present invention to provide an operation time for managing a probe detector according to a specific operation project classification, and to provide an operator with a detection time ratio of each operation cycle. Thus, the operator immediately improves these problems, increases the hourly throughput (UPH), and provides a reliable probe detector operation ratio calculation system and a calculation method using the same.

Another object of the present invention is to provide an operation time ratio for managing a specific project of each probe detector on a period-by-cycle basis, and the operation time ratio of a specific project is out of the allowable range, and when the discovery technology is in an inefficient state, the operator is immediately notified to the operator and The technique confirms the inefficiency state so that the operator immediately improves these probe detector operation ratio calculation systems and calculation methods using these.

In order to achieve the above object, the operation ratio calculation system of the probe detector of the present invention includes collecting an operation state of the probe detector, and an operation state collection mode classified according to the set project type, and storing the operation according to the above-mentioned project type. An operational state database of states, and an operational ratio calculation mode that calculates a ratio of durations of respective operational states stored in the operational state database to a duration relative to the duration of the entire operational state.

The above operational states of the above-described probe detector operation ratio calculation system can be classified into 'operation' and 'non-operation'.

Further, the above-mentioned 'operation' of the operation ratio calculation system of the above-described probe detector is classified into "detection" and "preparation detection".

The above operation ratio calculation mode is a 'detection time ratio' for calculating the ratio of the duration of the above-described operation state 'detection' to the duration of the above-described entire operation state.

The operation ratio calculation system of the probe detector described above additionally includes an error signal generation mode in which an error signal occurs when the calculated "detection time ratio" does not reach the set allowable ratio.

In the above operation ratio calculation system of the probe detector, the above-described operation state 'preparation detection' includes loading a wafer on which the wafer as a detection object is loaded at a detection position; arranging the wafer at the wafer position; and arranging the contact with the wafer a finishing probe of the needle card probe; preheating before detecting the wafer; unloading the unloading wafer of the wafer from the detecting position; and cleaning the wafer and the cleaning state of the device after the detecting.

Further, the above operation state 'non-operation' includes standby for not supplying the wafer or the probe card; confirming the contact position of the wafer and the probe due to an error, printing detection information, adjusting the detection temperature, and (causing) the device The failure (and) is stopped by the shutdown; and the above-mentioned wafer and the above-mentioned probe card are supplied to the probe detector described above, or the supply of the detection information according to these is input;

The above-described operation ratio calculation mode calculates the ratio of the duration of the above-described operation state "preparation detection" or "non-operation" specific state to the duration of the above-described entire operation state, respectively.

The operation ratio calculation system of the probe detector described above additionally includes an error signal occurrence of an error signal when a ratio of a specific state calculation of the above-described calculated operation state 'preparation detection' or 'non-operation' exceeds the set allowable range respectively mode.

The operation ratio calculation method of the probe detector of the present invention comprises: (a) an operation state collection mode collecting a phase of the operation state of the probe detector; (b), the operation state collection mode is classified according to the set project type. a phase of an operation state; (c), the operation state collection mode stores the operation state in a storage phase of the operation state database according to the type of the above-mentioned project; and (d), the operation ratio calculation mode calculation is stored in the operation state database The duration of each operational state is at the stage of the ratio of the duration of the overall operational state described above.

Hereinafter, an example of the present invention will be described in detail with reference to the accompanying drawings, and it will be easily practiced by those of ordinary skill in the art to which the present invention pertains. However, the present invention can be embodied in various forms, and the scope is not limited to the examples.

Hereinafter, the structure and function of the probe detector operation ratio calculation system according to an example of the present invention will be specifically described with reference to FIG. The operation ratio calculation system of the probe detector causes the semiconductor element on the wafer to contact the probe of the probe card, and after confirming the operation state of the probe detector that detects the electrical quality, the specific ratio is calculated according to the type of the set project.

The probe detector operation ratio calculation system according to an example of the present invention includes an operation state collection mode (100), an operation state database (200), and an operation The ratio calculation mode (300), the error signal generation mode (400), and the operation state display mode (500).

The above operational state collection mode (100) collects various operational status information from a plurality of probe detectors (PTs) connected by a network. The above operation state collection mode (100) calculates time information of each technology according to the collected operation state information according to each probe detector (PT).

The technical time information calculated by the above operation state collection mode (100) is recorded in the above operation state database (200). At this time, the above operation state collection mode (100) records the above time information in accordance with the type of the set project.

For example, a probe detector (PT) collects the A-technology from 12 o'clock to 12:30, and performs the operation state information of the B technology from 12:30 to 12:37. 100) Calculate the A technical time information as 30 minutes, calculate the B technical time information as 7 minutes, and distinguish the A and B technologies and record them in the above operational status database (200).

Here, the operational state of the probe detector (PT) refers to a specific state among the operation cycles of the probe detector (PT). Hereinafter, the above-described operational state whose duration is classified according to the type of the set project will be described in detail.

The operational states of the above probe detector (PT) are roughly classified into 'operation' and 'non-operation'. The above-mentioned 'operation' is a state in which the probe detector (PT) detects the electric quality of the semiconductor element on the wafer or prepares the wafer operation for these executions. The above 'non-operation' is the above probe detection The detector (PT) is in a state of being in standby or not performing an action and stopping.

Here, the above 'operation' is divided into "detection" and "preparation detection".

The above "detection" is a state in which the probe detector (PT) detects the electrical quality of the semiconductor element on the wafer. The above-mentioned "preparation detection" is for the above-described state in which the wafer and the probe card are prepared to be detected, or the wafer is cleaned and cleaned after detection.

Further, the above "preparation detection" is classified into "loading wafers", "finishing wafers", "finishing probes", "preheating", "unloading wafers", "cleaning", and the like. The above-mentioned "loading wafer" is a state in which the wafer of the inspection object is loaded on the detection position. The wafer is placed on a chuck (Chuck) on the probe detector (PT), and the "loading wafer" is a state in which the wafer is placed on the wafer stage.

The above-mentioned 'finishing wafer' and 'finishing probe' are for contacting the semiconductor element on the wafer and the probe in order to detect the electrical quality of the semiconductor element. In such a contact, in order to prevent an error from occurring, the wafer and the probe are in a state of being arranged.

The above "preheating" is a state in which the semiconductor element is heated and detected in a high temperature state to heat the wafer. The above-mentioned 'unloading wafer' is a technical state in which the wafer is unloaded from the detection position after the detection, that is, the above-described stage.

The above-mentioned 'cleaning' is the dusting of fine fragments such as the occurrence of contact between the semiconductor element and the probe by cleaning the probe from the probe card after the detection is completed.

On the other hand, the above 'non-operation' is roughly divided into 'standby' and 'stop' Machine ', 'supply'. The above-mentioned "standby" is a state in which the above-mentioned wafer or the above-described probe card is not supplied to the probe detector without being operated and standby.

The above-mentioned 'shutdown' is caused by an error in each technology, confirmation of the contact position of the wafer and the probe, confirmation of the printing position of the detection information of the semiconductor element, adjustment of the detection temperature, and equipment failure, and the probe detector (PT) is stopped. status. That is, the above-mentioned "stop" can be subdivided into "error occurrence", "confirmation connection position", "print detection information", "adjust detection temperature", and "fault".

The above-mentioned 'supply' is a technical state in which the above-described wafer and the probe card are supplied to the probe detector (PT) or input to the probe detector based on the detection information. Therefore, the above-mentioned 'supply' is a 'probe supply' that can be subdivided into a 'wafer supply' for supplying the above-mentioned wafer to the probe detector (PT), and supplying the probe card to the probe detector (PT). 'And 'Enter monitoring information' and so on.

The operation state collection mode (100) collects the operation state information collected from the plurality of probe detectors (PT) as described above, and calculates the time information of each technology, and records the data in the above operation state database according to the subdivided project classification. 200).

The operation state database (200) is based on the operation state collection mode (100), and the time information of each of the probe detectors (PT) is recorded according to each operation cycle. The above operational status database (200) provides stored technical time information to the operational ratio calculation mode (300).

The above operation ratio calculation mode (300) uses the above-described time information recorded in the above operation state database (200) to detect the detection technique. The ratio of the detection time of the ratio of the required time to the total consumption time of one operation cycle.

For example, when the total consumption time of one operation cycle is 100 minutes, and the time required for the detection technology is 40 minutes, the detection time ratio of the above detection ratio is 40%. The higher the ratio of these detection times, the more the probe detector (PT) detects more wafers per hour. Therefore, the throughput per hour (UPH) can be increased.

Moreover, the above operation ratio calculation mode (300) calculates the time ratio of each of the technologies in the time consumed for all the project operation cycles that have been set.

Further, the operation ratio calculation mode (300) compares the detection time ratio value for each operation cycle, compares the detection time ratio value of the operation cycle with the detection time ratio value of other operation cycles, and is less than the set allowable value. These are sensed by the above error signal generation mode (400) to issue an error signal.

Then, the above operation ratio calculation mode (300) uses the above-described operation state display mode (500), and according to the operator's request, classifies the time ratios of the respective technologies in accordance with each operation cycle and each project, and supplies them to the operator. Therefore, the operator can easily search or query the operational efficiency of each probe detector (PT).

Therefore, the external operator immediately senses the inefficiency state in the above probe detector (PT) operation by the error signal as described above. Through the above operation status display mode (500), the time ratio is confirmed by the specific project, and any technical problem is confirmed. Therefore, the operator confirms the technology and related materials and equipment so that the above probe detector (PT) maintains high efficiency.

The error signal generation mode (400) receives the signal of the above operation ratio calculation mode (300), and an error signal occurs. Such an error signal is a combination of one or more of various signals such as a sound of a warning sound, such as a light of a warning light.

The above-described operation state display mode (500) displays the detection time ratio calculated by the above-described operation ratio calculation mode (300) for each operation cycle. Therefore, the operator accepts the data of the above-described detection time ratio supplied from the above-described operation ratio calculation mode (300) through the above-described operation state display mode (500).

In the example of the present invention, the operation ratio calculation mode (300) compares the ratio value of the detection time of each probe detector (PT) for each operation cycle, and passes the error signal generation mode when the set allowable value is not satisfied. 400), an error signal is issued, but is not limited to these.

For example, the above operation ratio calculation mode (300) not only compares the above-mentioned detection time ratio, but also compares the ratio values of the same operation time of each operation cycle, and the time ratio value of the operation cycle is greater than the time ratio value of other operation cycles, and exceeds the allowable range. These, and through the above error signal generation mode (400), an error signal occurs.

At this time, the operator immediately senses any one of the above-mentioned probe detector (PT) operations by the error signal. Through the above operation state display mode (500), after confirming the time ratio of each specific project, the technology in which the problem occurs is quickly detected. The operator then inspects the materials and equipment associated with the technique so that the probe detector (PT) described above remains highly efficient.

Hereinafter, referring to FIG. 2, the probe detector operation according to the present invention will be specifically described. A probe detector operation ratio calculation method as an example of a ratio calculation system.

First, the operation state collection mode (100) collects operation state information (s100) of the probe detector (PT) for each operation cycle. Then, the above operation state collection mode (100) calculates the consumption time of each technology from the above operation state information, and classifies the time information according to the set project (s200). That is, the consumption time of each of the above-described probe detectors (PT) is distinguished for each item, and is transmitted to the above-described operation state collection mode (100).

The above operation status collection information (100) classifies the consumption time of each technology according to the belonging project.

Then, the sorted time information described above is recorded in the operation state database (200) in accordance with the above-described operation state collection mode (100) (s300). Thereafter, the operation ratio calculation mode (300) calculates the time ratio of the consumption time of the set project in the total consumption time of one operation cycle from the time information recorded in the operation state database (200) (s400). .

Then, the above-described time ratio calculated according to the above-described operation ratio calculation mode (300) is classified by the set project and supplied to the operator (s500) by the operation state display mode (500). At this time, these time ratios can be arranged and provided to the operator in each operation cycle according to the operator's request.

Hereinafter, a calculation method of the probe detector operation ratio according to another example of the present invention will be specifically described with reference to FIG. The probe detector operation ratio calculation method according to another example of the present invention is the same as the above-described probe detector calculation method according to the example, and it can be known that the above-described operation ratio calculation mode calculates the stages of the respective technical time ratios (s400). Therefore, omit its previous order The description of the paragraph explains the subsequent stages.

Thereafter, the above operation ratio calculation mode (300) analyzes whether or not the time ratio value occupied by the detection technique does not reach the set allowable value (s430) in the operation cycle. For example, when the allowable value is set to 45%, the total consumption time of the operation cycle is 100 minutes, and when the detection time is 40 minutes, the detection time ratio is 40% and it is determined that the set allowable value is not reached.

Then, when the detection time ratio of the operation cycle is determined not to reach the set allowable value, the error signal generation mode (400) issues an error signal (s460). As described above, the detection time ratio is 40%, the allowable value is set to 45% when not full, and the error signal generation mode (400) issues an error signal.

On the other hand, each of the technical calculation ratios calculated according to the above-described operation ratio calculation mode (300) is sorted by the set job and supplied to the operator (s500) by the above-described operation state display mode (500). At this time, such a time ratio is sorted and provided to the operator in accordance with the operation cycle according to the operator's request.

The probe detector operation ratio calculation method according to another example of the present invention is the above-described operation ratio calculation mode (300) comparing the detection time ratio value with the set allowable value, and an error signal occurs, but is not limited thereto.

For example, the above operation ratio calculation mode (300) compares any one of the time ratios of the cycles with the corresponding previous cycle time ratios, and when the set allowable values are exceeded, an error signal occurs.

For example, when the allowable range is set to 10%, the total consumption time of the operation cycle is 100 minutes, and when the warm-up time is 30 minutes, the warm-up time ratio is 30%, and the allowable range is set to 30±3%. Therefore, the above operation ratio Rate calculation mode (300) When the above-described warm-up time ratio is less than 27% or exceeds 33%, an error signal is generated by the above-described error signal generation signal (400).

Therefore, when any one of the operator's consumption time of each technology occurs in an inefficient state, the problem is immediately sensed, the technical equipment is confirmed, and the inefficiency state is improved.

Only the embodiments described in the present invention will be described in detail above. However, those skilled in the art can make various variations and modifications within the scope of the technical idea of the present invention. These variations and modifications should be specified within the scope of the patent application.

Industrial applicability

As described above, according to the probe detector operation ratio calculation system of the present invention and the calculation method using the same, the operation state of the probe detector is classified and managed according to a specific operation project, and the operator is provided with the detection time ratio according to each operation cycle. So that the operator can improve these immediately. This increases the hourly throughput (Unit per hour; UPH).

Moreover, the operator confirms the inefficiency state via the above error signal and the time ratio provided by the specific technology, and immediately improves the technique to increase the throughput per hour.

Moreover, the above time ratios are arranged and provided according to specific technical or operational cycles according to operator requirements, ensuring reliability of the equipment.

100‧‧‧Operation status collection mode

200‧‧‧Operational Status Database

300‧‧‧Operating ratio calculation mode

400‧‧‧Error signal generation mode

500‧‧‧Operation status display mode

PT‧‧‧ probe detector

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic diagram showing the construction of a calculation system for a probe detector operation ratio according to an example of the present invention.

2 is a calculation side of a probe detector operation ratio according to an example of the present invention. A schematic sequence diagram of the law.

3 is a schematic sequence diagram of a method of calculating a probe detector operation ratio according to another example of the present invention.

100‧‧‧Operation status collection mode

200‧‧‧Operational Status Database

300‧‧‧Operating ratio calculation mode

400‧‧‧Error signal generation mode

500‧‧‧Operation status display mode

Claims (10)

A calculation system for a probe detector operation ratio, comprising: an operation state collection member that collects an operation state of the probe detector, is classified according to a set type of a project; an operation state database, which is as described above The project type stores an operation state collected by the operation state collection means; and an operation ratio calculation means calculates a ratio of a duration of each operation state stored in the operation state database to a duration of the entire operation state. The operation ratio calculation system according to the first aspect of the patent application is characterized in that the above operation states are classified into "operation" and "non-operation". The operation ratio calculation system according to the second aspect of the patent application is characterized in that the above-mentioned 'operation' is classified into "detection" and "preparation detection". An operation ratio calculation system according to claim 3, wherein the operation ratio calculation mode is a detection time ratio that calculates a ratio of a duration of the operation state 'detection' to a duration of the entire operation state. '. An operation ratio calculation system according to the fourth aspect of the patent application, characterized in that, further comprising an error signal generation mode in which an error signal occurs when the calculated "detection time ratio" does not reach the set allowable ratio. An operation ratio calculation system for a probe detector according to claim 3 of the patent application, characterized in that the above-described operation state 'preparation detection' includes Loading a wafer on which the wafer of the inspection object is loaded at the detection position; tidying the wafer at the position of the wafer; tidying the probe of the probe card probe in contact with the wafer; preheating before detecting the wafer; unloading from the detection position The wafer is unloaded from the wafer; and after inspection, the clean state of the wafer and device is cleaned. An operation ratio calculation system according to the second aspect of the patent application or the third aspect of the patent application scope, characterized in that the operation state 'non-operation' includes standby without supplying a wafer or a probe card; and confirming the wafer due to an error a contact position with the probe, printing detection information, adjusting the detection temperature, and stopping the device from being stopped; and supplying the wafer and the probe card to the probe detector, or inputting a supply state according to the detection information . An operation ratio calculation system according to item 7 of the patent application scope, characterized in that the operation ratio calculation mode respectively calculates a duration of a duration of the specific operation state of the specific state of the above-mentioned operation state 'preparation detection' or 'non-operation' The ratio. An operation ratio calculation system according to item 8 of the patent application scope, characterized in that it further comprises: when the ratio of the specific state calculation of the above-mentioned calculated operation state 'preparation detection' or 'non-operation' exceeds the set allowable range, respectively, occurs The error signal generation mode of the error signal. Operation ratio calculation method for probe detector, package thereof The following steps are characterized by: (a) collecting the operational status of the probe detector; (b) sorting the operational status collected in step (a) according to the type of the set project; (c) following the steps ( b) the set of project types stores the operation state classified in step (b) in the operation state database; and (d) calculates the duration of each operation state stored in the operation state database of step (c) The ratio of the duration of the entire operational state.