TWI397120B - Apparatus and method for etching a substrate - Google Patents

Apparatus and method for etching a substrate Download PDF

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Publication number
TWI397120B
TWI397120B TW96102856A TW96102856A TWI397120B TW I397120 B TWI397120 B TW I397120B TW 96102856 A TW96102856 A TW 96102856A TW 96102856 A TW96102856 A TW 96102856A TW I397120 B TWI397120 B TW I397120B
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bubble
etching
glass substrates
substrate
gas
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TW96102856A
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Chinese (zh)
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TW200741850A (en
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Kyong-Man Kim
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Samsung Display Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching

Description

用於蝕刻一基材的設備與方法Apparatus and method for etching a substrate

本發明係關於一種用於蝕刻一基材之設備與方法。更特定言之,本發明係關於用於蝕刻一具有均一厚度之基材的設備與方法。This invention relates to an apparatus and method for etching a substrate. More particularly, the present invention relates to apparatus and methods for etching a substrate having a uniform thickness.

一般而言,液晶顯示器("LCD")設備包括一LCD面板,其具有一薄膜電晶體("TFT")基材、一面向該TFT基材之彩色濾光片基材及一介於TFT基材與彩色濾光片基材之間安置的液晶層。In general, a liquid crystal display ("LCD") device includes an LCD panel having a thin film transistor ("TFT") substrate, a color filter substrate facing the TFT substrate, and a TFT substrate. A liquid crystal layer disposed between the color filter substrate and the color filter substrate.

最近,隨著對諸如移動終端、多媒體播放機、膝上型電腦等之移動電子裝置增加之需求,LCD設備由於其重量輕而變得日益普及。Recently, with the increasing demand for mobile electronic devices such as mobile terminals, multimedia players, laptops, etc., LCD devices have become increasingly popular due to their light weight.

諸如LCD設備之TFT基材及彩色濾光片基材的玻璃基材之重量占LCD設備之大比例重量。因此,通常使用一蝕刻設備來降低玻璃基材之厚度以降低LCD設備之重量。The weight of the glass substrate such as the TFT substrate of the LCD device and the color filter substrate accounts for a large proportion of the weight of the LCD device. Therefore, an etching apparatus is generally used to reduce the thickness of the glass substrate to reduce the weight of the LCD device.

然而,當使用用於蝕刻之習知設備蝕刻基材時,產生雜質,使得可能不能均勻蝕刻基材。However, when the substrate is etched using a conventional device for etching, impurities are generated, so that the substrate may not be uniformly etched.

本發明提供一種藉由將氣泡均勻噴射於玻璃基材上來均勻蝕刻基材之設備。The present invention provides an apparatus for uniformly etching a substrate by uniformly spraying bubbles onto a glass substrate.

本發明亦提供一種使用該設備來蝕刻基材之方法。The invention also provides a method of etching a substrate using the apparatus.

在根據本發明之用於蝕刻一基材之一實例設備中,該設備包括一蝕刻容器、複數個氣泡噴射器及一氣體供應部件。蝕刻容器容納複數個玻璃基材,以便玻璃基材垂直於蝕刻容器之底部表面及在蝕刻容器中相互平行而安置。每一氣泡噴射器插入每一玻璃基材中用於將氣泡噴射於玻璃基材上。氣體供應部件係安置於蝕刻容器之外部用於向氣泡噴射器供應氣體。In an apparatus for etching an substrate according to the present invention, the apparatus includes an etching vessel, a plurality of bubble jets, and a gas supply member. The etched container houses a plurality of glass substrates such that the glass substrates are disposed perpendicular to the bottom surface of the etched container and parallel to each other in the etched container. Each bubble ejector is inserted into each glass substrate for spraying bubbles onto the glass substrate. A gas supply component is disposed external to the etch vessel for supplying gas to the bubble ejector.

每一氣泡噴射器包括一噴射板,其具有一在該噴射板中形成之氣體過道;及複數個噴射噴嘴,其在面向玻璃基材之一者之噴射板的表面上形成且連接至氣體過道。噴射噴嘴呈一晶格結構在噴射板上形成。Each bubble ejector includes a spray plate having a gas passage formed in the spray plate; and a plurality of spray nozzles formed on a surface of the spray plate facing one of the glass substrates and connected to the gas aisle. The spray nozzle is formed in a lattice structure on the spray plate.

該設備進一步包括一固定板,其安置於蝕刻容器內部且具有形成於其上之固定夾。固定夾固定玻璃基材。固定板包括一氣體入口孔,其連接氣體供應部件與每一氣泡噴射器之氣體過道。The apparatus further includes a mounting plate disposed within the etched container and having a retaining clip formed thereon. The fixing clip fixes the glass substrate. The fixed plate includes a gas inlet port that connects the gas supply member to the gas passage of each bubble ejector.

每一氣泡噴射器包括一框架,其具有一在該框架之中心部分中形成之開口部分;一第一管,其安置於該框架中且連接至氣體供應部件;及第二管,其以固定間隔垂直連接至第一管以橫越開口部分且具有對應於面向玻璃基材之一者之表面所形成的複數個噴射孔。噴射孔以固定間隔在第二管上形成。Each bubble ejector includes a frame having an opening portion formed in a central portion of the frame; a first tube disposed in the frame and coupled to the gas supply member; and a second tube securing The spacer is vertically connected to the first tube to traverse the opening portion and has a plurality of ejection holes formed corresponding to a surface facing one of the glass substrates. The injection holes are formed on the second tube at regular intervals.

蝕刻容器充滿蝕刻流體且可包括氫氟酸(HF)。氣泡噴射器可包括聚氯乙烯(PVC)。The etch vessel is filled with an etchant fluid and may include hydrofluoric acid (HF). The bubble jet can include polyvinyl chloride (PVC).

在根據本發明之用於蝕刻一基材之另一實例設備中,該設備包括一蝕刻容器、一氣泡噴射管及一氣體供應部件。蝕刻容器容納複數個玻璃基材,以便玻璃基材垂直於蝕刻容器之底部表面安置且相互平行。氣泡噴射管沿玻璃基材之垂直方向縱向形成且安置於玻璃基材之側邊,用於將氣泡噴射於玻璃基材上。氣體供應部件係安置於蝕刻容器之外部用於向氣泡噴射管供應氣體。In another example apparatus for etching a substrate in accordance with the present invention, the apparatus includes an etch vessel, a bubble jet tube, and a gas supply member. The etched container houses a plurality of glass substrates such that the glass substrates are disposed perpendicular to the bottom surface of the etched container and are parallel to each other. The bubble jet tube is formed longitudinally along the vertical direction of the glass substrate and disposed on the side of the glass substrate for spraying the bubbles onto the glass substrate. The gas supply member is disposed outside the etching vessel for supplying gas to the bubble jet tube.

氣泡噴射管安置於玻璃基材之側面,用於將氣泡噴射至玻璃基材上。A bubble jet tube is disposed on the side of the glass substrate for spraying the bubbles onto the glass substrate.

氣泡噴射管包括以固定間隔面向玻璃基材之側面形成的複數個噴射孔。The bubble jet tube includes a plurality of spray holes formed at a fixed interval toward the side surface of the glass substrate.

該設備進一步包括一用於沿玻璃基材之側面轉移氣泡噴射管之轉移器件。轉移器件包括一安置於蝕刻容器外部之汽缸、一與汽缸組合且沿玻璃基材側面轉移之汽缸負載、一用於連接汽缸負載與氣泡噴射管之連接部件及一部分覆蓋連接部件且導引氣泡噴射管移動之導引部件。汽缸由氣壓型及油壓型之至少一者驅動。The apparatus further includes a transfer device for transferring the bubble jet tube along the side of the glass substrate. The transfer device includes a cylinder disposed outside the etching vessel, a cylinder load combined with the cylinder and transferred along the side of the glass substrate, a connecting member for connecting the cylinder load and the bubble jet pipe, and a portion covering the connecting member and guiding the bubble jet Guide for moving the tube. The cylinder is driven by at least one of a pneumatic type and a hydraulic type.

該設備進一步包括插入每一玻璃基材中的用於將氣泡噴射至玻璃基材上的複數個氣泡噴射器之每一者。The apparatus further includes each of a plurality of bubble jets inserted into each of the glass substrates for ejecting bubbles onto the glass substrate.

在根據本發明之用於蝕刻一基材之一實例方法中,該方法包括垂直於蝕刻容器之底部表面定位複數個玻璃基材,該等玻璃基材相互平行安置;定位待插入每一玻璃基材中之複數個氣泡噴射器之每一者;自安置於蝕刻容器外部之氣體供應部件向氣泡噴射器供應氣體;及使用氣泡噴射器將氣泡噴射於玻璃基材上用於消除雜質。In an exemplary method for etching a substrate according to the present invention, the method includes positioning a plurality of glass substrates perpendicular to a bottom surface of the etching container, the glass substrates being disposed in parallel with each other; positioning to be inserted into each glass substrate Each of the plurality of bubble ejector in the material; supplying gas to the bubble ejector from a gas supply member disposed outside the etch vessel; and spraying the bubble onto the glass substrate using a bubble ejector for eliminating impurities.

每一氣泡噴射器經由在面向玻璃基材之一者之噴射板的表面上所形成之複數個噴射噴嘴來噴射氣泡且噴射板具有一在噴射板內定位之氣體過道。氣體過道連接至氣體供應部件。Each bubble ejector ejects bubbles via a plurality of spray nozzles formed on the surface of the spray plate facing one of the glass substrates and the spray plate has a gas passage positioned within the spray plate. A gas aisle is connected to the gas supply component.

每一氣泡噴射器經由在複數個第二管上形成以對應於面向每一玻璃基材之表面的複數個噴射孔噴射氣泡,該等第二管垂直連接至連接於氣體供應部件之第一管。Each bubble ejector ejects bubbles via a plurality of injection holes formed on a plurality of second tubes corresponding to surfaces facing each of the glass substrates, the second tubes being vertically connected to the first tube connected to the gas supply member .

在根據本發明之用於蝕刻一基材之另一實例方法中,該方法包括垂直於蝕刻容器之底部表面定位複數個玻璃基材,該等玻璃基材相互平行安置;定位兩個氣泡噴射管以分別對應於玻璃基材之兩側;及沿玻璃基材之側邊轉移氣泡噴射管且將氣泡噴射於玻璃基材上用於消除雜質。氣泡噴射管係以大體上相同之速率轉移。In another example method for etching a substrate according to the present invention, the method includes positioning a plurality of glass substrates perpendicular to a bottom surface of the etching container, the glass substrates being disposed in parallel with each other; positioning two bubble jet tubes To respectively correspond to both sides of the glass substrate; and transfer the bubble jet tube along the sides of the glass substrate and spray the bubbles onto the glass substrate for eliminating impurities. The bubble jet tubes are transferred at substantially the same rate.

根據本發明,每一氣泡噴射器安置於每一玻璃基材之間且將氣泡噴射於玻璃基材上,以便可防止在蝕刻玻璃基材中產生之雜質再黏附於玻璃基材上且亦可消除已黏附於玻璃基材上之雜質。因此,可均勻蝕刻玻璃基材。According to the present invention, each bubble ejector is disposed between each of the glass substrates and sprays the bubbles onto the glass substrate so as to prevent impurities generated in the etched glass substrate from adhering to the glass substrate and also Eliminate impurities that have adhered to the glass substrate. Therefore, the glass substrate can be uniformly etched.

參看展示本發明之實施例的附圖在下文中更充分地描述本發明。然而,本發明可用許多不同形式體現且不應理解為受限於本文闡述之實施例。更確切地,提供此等實施例以便本揭示內容將會詳盡且全面且將充分地將本發明之範疇傳達給熟習該項技術者。在諸圖中,為了清楚起見,可誇示層及區域之尺寸及相對尺寸。The invention is described more fully hereinafter with reference to the accompanying drawings in which, However, the invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, the present embodiments are provided so that this disclosure will be thorough and comprehensive and will fully convey the scope of the invention to those skilled in the art. In the figures, the dimensions and relative dimensions of the layers and regions are exaggerated for clarity.

應瞭解,當一元件或層被指係"在另一元件或層上"、"連接至"或"耦合至"另一元件或層時,該元件或層可直接在其他元件或層上、連接至或耦合至其他元件或層或可存在插入元件或層。相反,當一元件被指係"直接在另一元件或層上"、"直接連接至"或"直接耦合至"另一元件或層時,不存在插入元件或層。相同數字始終係指相同元件。如本文所使用,術語"及/或"包括相關聯之列出項目之一或多者之任何及所有組合。It will be understood that when an element or layer is referred to as " " " " " " " " " " " " " " " " " " Connected to or coupled to other elements or layers or there may be intervening elements or layers. In contrast, when an element is referred to as "directly on" or "directly connected to" or "directly connected to" another element or layer, there is no intervening element or layer. The same number always refers to the same component. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

應瞭解,儘管術語第一、第二、第三等可在本文中使用以描述多個元件、組件、區域、層及/或部分,但此等元件、組件、區域、層及/或部分將不會由此等術語限制。此等術語僅用以將一個元件、組件、區域、層或部分區別於另一區域、層或部分。因此,在不偏離本發明之教示之情況下,以下所討論之第一元件、組件、區域、層或部分可稱為第二元件、組件、區域、層或部分。It will be appreciated that, although the terms first, second, third, etc. may be used to describe a plurality of elements, components, regions, layers and/or portions, these elements, components, regions, layers and/or portions will It is not limited by such terms. The terms are used to distinguish one element, component, region, layer, Thus, a first element, component, region, layer or portion of a singular element, component, region, layer or portion may be referred to as a second element, component, region, layer or portion.

為易於描述,可在本文中使用諸如"之下"、"以下"、"下面"、"之上"、"上面"及其類似術語之空間相對術語以描述如圖中所說明之一個元件或特徵與另一元件或特徵之關係。應瞭解,空間相對術語意欲涵蓋除在圖中描繪之定向外,使用或操作中之器件的不同定向。例如,若圖中器件轉動,描述為在其他元件或特徵"以下"或"之下"之元件則將在該等其他元件或特徵"之上"定向。因此,術語"以下"可涵蓋之上及以下兩者之定向。器件可另外定向(旋轉90度或其他定向)且相應地由在本文中使用之空間相對描述符解釋。For ease of description, spatially relative terms such as "lower", "lower", "lower", "above", "above" and the like may be used herein to describe one element or The relationship of a feature to another component or feature. It will be appreciated that spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, elements that are described as "below" or "beneath" or "the" Thus, the term "below" may encompass both the orientation above and below. The device may be otherwise oriented (rotated 90 degrees or other orientation) and interpreted accordingly by the spatially relative descriptors used herein.

在本文中使用之術語僅為描述特定實施例之目的且不欲限制本發明。除非本文清楚地另外指示,否則如本文所使用,單數形式"一"意欲亦包括複數形式。應進一步瞭解,當用於本說明書中時,術語"包含"表示存在規定特徵、整數、步驟、操作、元件及/或組件,但不排除存在或增加一或多種其他特徵、整數、步驟、操作、元件、組件及/或其組合。The terminology used herein is for the purpose of describing particular embodiments only and As used herein, the singular " " " It should be further understood that the term "comprising", when used in the specification, means that there are a specified feature, integer, step, operation, element, and / or component, but does not exclude the presence or addition of one or more other features, integers, steps, operations , components, components, and/or combinations thereof.

在本文中參看示意性說明本發明之理想化實施例(及中間結構)之橫截面圖解描述本發明之實施例。如此,將預期作為(例如)製造技術結果之圖解之形狀的變化及/或公差。因此,本發明之實施例將不會理解為受限於本文說明之區域之特定形狀,但包括由(例如)製造所產生之形狀的偏差。例如,作為矩形來說明之植入區域通常將具有圓形或曲線特徵及/或在其邊緣處之植入濃度梯度,而非自植入區域至非植入區域之二元變化。同樣,由植入形成之內埋區域可引起在內埋區域與表面之間的區域(經由其發生植入)之一些植入。因此,在圖中說明之區域本質上為示意性的且其形狀不意欲說明器件之區域之實際形狀且不意欲限制本發明之範疇。Embodiments of the present invention are described herein with reference to cross-section illustration of an idealized embodiment (and intermediate structure) of the present invention. As such, variations and/or tolerances of the shapes of the illustrations of the results of the manufacturing techniques are contemplated. Thus, the embodiments of the invention are not to be understood as being limited to the specific shapes of For example, an implanted region illustrated as a rectangle will typically have rounded or curved features and/or an implant concentration gradient at its edges rather than a binary change from the implanted region to the non-implanted region. Likewise, a buried region formed by implantation can cause some implantation of the region between the buried region and the surface through which implantation occurs. Therefore, the regions illustrated in the figures are illustrative in nature and are not intended to limit the scope of the invention.

除非另外定義,否則在本文中使用之所有術語(包括技術及科學術語)具有如由本發明所屬之該項技術之一般技術者通常所瞭解之相同含義。應進一步瞭解,諸如彼等在通常使用之辭典中所定義之術語應解釋為具有與其在相關技術範圍中之含義一致之含義且除非在本文中十分明確地定義,否則不會以理想化或過度形式化意義來解釋。All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. It should be further appreciated that terms such as those defined in the commonly used dictionary should be interpreted as having meaning consistent with their meaning in the relevant art and will not be idealized or excessive unless explicitly defined herein. Formal meaning to explain.

在下文中,將參看附圖詳細解釋本發明。Hereinafter, the present invention will be explained in detail with reference to the accompanying drawings.

圖1為說明根據本發明之第一實例實施例之用於蝕刻一基材之設備的正視圖且圖2為說明圖1中之玻璃基材、氣泡噴射器及固定板之分解透視圖。1 is a front elevational view showing an apparatus for etching a substrate according to a first exemplary embodiment of the present invention and FIG. 2 is an exploded perspective view illustrating the glass substrate, bubble jet, and fixing plate of FIG. 1.

參看圖1及圖2,根據本發明之第一實例實施例之基材蝕刻設備100包括一蝕刻容器110、複數個氣泡噴射器120及一氣體供應部件150。Referring to FIGS. 1 and 2, a substrate etching apparatus 100 according to a first exemplary embodiment of the present invention includes an etching vessel 110, a plurality of bubble injectors 120, and a gas supply member 150.

蝕刻容器110包括一底部表面112及側壁114且充滿蝕刻流體10。側壁114自底部表面112之側邊延伸且垂直於該底部表面112。可用於蝕刻流體10之材料之一實例可包括氫氟酸("HF")。蝕刻流體10係藉由以某一比率將HF與去離子水("DI")混合而製成。The etch vessel 110 includes a bottom surface 112 and sidewalls 114 and is filled with an etchant fluid 10. The sidewalls 114 extend from the sides of the bottom surface 112 and are perpendicular to the bottom surface 112. An example of a material that can be used to etch fluid 10 can include hydrofluoric acid ("HF"). The etching fluid 10 is made by mixing HF with deionized water ("DI") at a certain ratio.

通常,將HF歸類為弱酸且具有用以蝕刻玻璃、石英等之特徵。例如,為避免由HF所蝕刻,蝕刻容器110可包括樹脂材料。Typically, HF is classified as a weak acid and has features for etching glass, quartz, and the like. For example, to avoid etching by HF, the etching vessel 110 may include a resin material.

由於HF對人體皮膚及黏膜有害,因此基材蝕刻設備100可進一步包括一容納蝕刻容器110之額外容器以防止HF漏出基材蝕刻設備100之外。Since HF is detrimental to human skin and mucous membranes, substrate etching apparatus 100 can further include an additional container that houses etch vessel 110 to prevent HF from leaking out of substrate etching apparatus 100.

複數個玻璃基材200垂直於蝕刻容器110之底部表面112且相互平行來安置。在此狀況下,例如,玻璃基材200可為一薄膜電晶體("TFT")基材及一彩色濾光片基材,其為在一LCD設備中顯示影像之液晶顯示器("LCD")面板的主要元件。玻璃基材200可為具有TFT基材、彩色濾光片基材及一插入於TFT基材與彩色濾光片基材之間的液晶層之LCD面板。由於TFT基材及彩色濾光片基材之重量構成LCD設備之大部分重量,因此當使用本發明之基材蝕刻設備100減小TFT基材及彩色濾光片基材之厚度時,LCD設備之總重量可顯著減小。A plurality of glass substrates 200 are disposed perpendicular to the bottom surface 112 of the etch vessel 110 and are positioned parallel to each other. In this case, for example, the glass substrate 200 can be a thin film transistor ("TFT") substrate and a color filter substrate, which is a liquid crystal display ("LCD") that displays an image in an LCD device. The main components of the panel. The glass substrate 200 may be an LCD panel having a TFT substrate, a color filter substrate, and a liquid crystal layer interposed between the TFT substrate and the color filter substrate. Since the weight of the TFT substrate and the color filter substrate constitutes a majority of the weight of the LCD device, when the substrate etching apparatus 100 of the present invention is used to reduce the thickness of the TFT substrate and the color filter substrate, the LCD device The total weight can be significantly reduced.

基材蝕刻設備100進一步包括一用於固定玻璃基材200之固定板140。固定板140安置於蝕刻容器110之底部表面112與玻璃基材200之間。另外,固定板140可包括與蝕刻容器110相同之材料以避免被具有HF之蝕刻流體10蝕刻。The substrate etching apparatus 100 further includes a fixing plate 140 for fixing the glass substrate 200. The fixing plate 140 is disposed between the bottom surface 112 of the etching container 110 and the glass substrate 200. Additionally, the fixed plate 140 can include the same material as the etched container 110 to avoid etching by the etch fluid 10 having HF.

為固定玻璃基材200,對應於接觸固定板140之每一玻璃基材200之兩個邊緣部分形成固定夾142。每一固定夾142包括一固定凹槽143。固定凹槽143之厚度稍微大於或等於玻璃基材200之厚度。例如,玻璃基材200之兩個邊緣部分插入固定凹槽143中而得以固定。固定夾142可與固定板140整體成形或可分別成形且隨後附著於固定板140上。To fix the glass substrate 200, a fixing clip 142 is formed corresponding to both edge portions of each of the glass substrates 200 contacting the fixing plate 140. Each of the fixing clips 142 includes a fixing groove 143. The thickness of the fixing groove 143 is slightly greater than or equal to the thickness of the glass substrate 200. For example, the two edge portions of the glass substrate 200 are inserted into the fixing groove 143 to be fixed. The retaining clips 142 may be integrally formed with the fixed plate 140 or may be separately formed and then attached to the fixed plate 140.

在用蝕刻流體10填充蝕刻容器110且在蝕刻容器110中定位玻璃基材200後,蝕刻玻璃基材200。視蝕刻流體10中之HF密度及浸漬時間而定,蝕刻玻璃基材200。因此,玻璃基材200之蝕刻可根據操作者之需要,藉由改變蝕刻流體10中HF之密度及浸漬時間來控制。After the etching vessel 110 is filled with the etching fluid 10 and the glass substrate 200 is positioned in the etching vessel 110, the glass substrate 200 is etched. The glass substrate 200 is etched depending on the HF density and the immersion time in the etching fluid 10. Therefore, the etching of the glass substrate 200 can be controlled by changing the density of the HF in the etching fluid 10 and the immersion time according to the needs of the operator.

當蝕刻玻璃基材200時,雜質自然產生。雜質再黏附於如上所述之玻璃基材200,使得玻璃基材200可經蝕刻而具有一不均勻表面。When the glass substrate 200 is etched, impurities are naturally generated. The impurities are then adhered to the glass substrate 200 as described above such that the glass substrate 200 can be etched to have an uneven surface.

當蝕刻表示玻璃基材200之一實例實施例之LCD面板之TFT基材或彩色濾光片基材時,由雜質所致之不均勻表面可使顯示器品質變差。因此,基材蝕刻設備100可需要用於防止雜質再黏附於玻璃基材200上的獨立氣泡噴射器120。When the TFT substrate or the color filter substrate of the LCD panel of an example embodiment of the glass substrate 200 is etched, the uneven surface due to impurities may deteriorate the display quality. Accordingly, the substrate etching apparatus 100 may require a separate bubble ejector 120 for preventing impurities from re-adhering to the glass substrate 200.

複數個氣泡噴射器120之每一者插入每一玻璃基材200中,用於將氣泡20噴射於玻璃基材200上。例如,每一氣泡噴射器120將氣泡20噴射於玻璃基材200上用於防止雜質再黏附於玻璃基材200上且用於在複數個玻璃基材200上同步噴射氣泡20以縮短蝕刻基材之前置時間。Each of the plurality of bubble jets 120 is inserted into each of the glass substrates 200 for spraying the bubbles 20 onto the glass substrate 200. For example, each bubble ejector 120 sprays the bubbles 20 onto the glass substrate 200 for preventing impurities from re-adhering onto the glass substrate 200 and for simultaneously ejecting the bubbles 20 on the plurality of glass substrates 200 to shorten the etching of the substrate. Before the time.

每一氣泡噴射器120安置於固定板140上。在此狀況下,固定板140包括在接觸每一氣泡噴射器120之表面上的複數個第一氣體入口孔144。第一氣體入口孔連接每一氣泡噴射器120與氣體供應部件150。Each bubble ejector 120 is disposed on the fixed plate 140. In this case, the fixed plate 140 includes a plurality of first gas inlet holes 144 on the surface contacting each of the bubble ejector 120. A first gas inlet aperture connects each bubble ejector 120 to the gas supply component 150.

在此狀況下,固定板140分成一用於玻璃基材200之第一部分及一用於氣泡噴射器120之第二部分。第一部分及第二部分可分別製造且可組合成固定板140。因此,當氣泡噴射器120噴射氣泡20時,玻璃基材200及氣泡噴射器120可相互以相反方向重複移動,以便氣泡20可均勻地噴射於玻璃基材200上。In this case, the fixing plate 140 is divided into a first portion for the glass substrate 200 and a second portion for the bubble ejector 120. The first portion and the second portion may be separately fabricated and may be combined into a fixed plate 140. Therefore, when the bubble ejector 120 ejects the bubble 20, the glass substrate 200 and the bubble ejector 120 can be repeatedly moved in opposite directions to each other so that the bubble 20 can be uniformly sprayed onto the glass substrate 200.

或者,每一氣泡噴射器120可與固定板140分離且可經由一空氣管直接連接至氣體供應部件150。在此狀況下,除氣泡噴射器120外,固定板140可隨玻璃基材200移動,以便可根據玻璃基材200之尺寸更靈活地修改固定板140。尤其,當每一玻璃基材200之尺寸大於每一氣泡噴射器120之尺寸時,每一玻璃基材200上下及左右移動固定板140,以便氣泡20可均勻地噴射於玻璃基材200上。Alternatively, each bubble ejector 120 can be separate from the stationary plate 140 and can be directly coupled to the gas supply component 150 via an air tube. In this case, in addition to the bubble ejector 120, the fixing plate 140 may move with the glass substrate 200 so that the fixing plate 140 can be modified more flexibly according to the size of the glass substrate 200. In particular, when the size of each glass substrate 200 is larger than the size of each bubble ejector 120, each of the glass substrates 200 moves the fixing plate 140 up and down and left and right so that the bubbles 20 can be uniformly sprayed onto the glass substrate 200.

氣泡噴射器120包括與蝕刻容器110相同之材料以避免被具有HF之蝕刻流體10蝕刻。可用於氣泡噴射器120之材料之一實例可包括聚氯乙烯(PVC)。Bubble ejector 120 includes the same material as etch vessel 110 to avoid etching by etch fluid 10 having HF. An example of a material that can be used for the bubble ejector 120 can include polyvinyl chloride (PVC).

氣體供應部件150係安置於蝕刻容器110之外部,用於向氣泡噴射器120供應氣體30。氣體供應部件150包括經壓縮之氣體30,以便形成處於固定水平之氣體壓力。例如,氣體供應部件150使用氣體壓力向固定板140供應氣體30,從而使得氣體30供應至氣泡噴射器120。The gas supply component 150 is disposed outside of the etching vessel 110 for supplying the gas injector 30 to the bubble injector 120. The gas supply component 150 includes a compressed gas 30 to form a gas pressure at a fixed level. For example, the gas supply part 150 supplies the gas 30 to the fixed plate 140 using the gas pressure, so that the gas 30 is supplied to the bubble ejector 120.

氣體供應部件150可包括一調節器,其用於以處於固定水平下之氣體壓力向固定板140供應氣體30。調節器包括一測量儀,可經由該測量儀檢查氣體壓力之水平,以便可定量控制氣體壓力之水平。The gas supply member 150 may include a regulator for supplying the gas 30 to the fixed plate 140 at a gas pressure at a fixed level. The regulator includes a meter through which the level of gas pressure can be checked to quantitatively control the level of gas pressure.

因此,空氣供應部件150經由固定板140及第一氣體入口孔144向每一氣泡噴射器120供應具有處於固定水平下之氣體壓力的氣體30,以便氣泡噴射器120可噴射氣泡20。在此狀況下,可用於氣體30之材料之一實例可包括氮氣(N2 )、大氣空氣等。Therefore, the air supply member 150 supplies the gas 30 having the gas pressure at a fixed level to each of the bubble ejector 120 via the fixed plate 140 and the first gas inlet hole 144 so that the bubble ejector 120 can eject the bubble 20. In this case, an example of a material that can be used for the gas 30 may include nitrogen (N 2 ), atmospheric air, and the like.

或者,基材蝕刻設備100可包括一過濾器160、一儲存槽170及一泵180,以用於淨化及補給蝕刻流體10。Alternatively, the substrate etching apparatus 100 can include a filter 160, a storage tank 170, and a pump 180 for purifying and replenishing the etching fluid 10.

使用以上元件之淨化及補給方法係如下。首先,在穿過過濾器160時,將雜質與蝕刻容器110之蝕刻流體10分離且將無雜質之蝕刻流體10供應至儲存槽170。接著,將無雜質之蝕刻流體10藉由泵180自儲存槽170補給至蝕刻容器110中。在此狀況下,泵180可由操作者或可安置於蝕刻容器110中之水位感應器控制。或者,蝕刻流體10可包括額外DI或HF用於在儲存槽170中將DI與HF之混合比率保持在固定水平。The purification and replenishment methods using the above components are as follows. First, when passing through the filter 160, impurities are separated from the etching fluid 10 of the etching vessel 110 and the impurity-free etching fluid 10 is supplied to the storage tank 170. Next, the impurity-free etching fluid 10 is supplied from the storage tank 170 to the etching vessel 110 by the pump 180. In this case, the pump 180 can be controlled by an operator or a water level sensor that can be placed in the etch vessel 110. Alternatively, the etchant fluid 10 may include additional DI or HF for maintaining the mixing ratio of DI to HF at a fixed level in the storage tank 170.

圖3為說明圖2中之氣泡噴射器之一者的實例實施例之透視圖且圖4為說明圖3中之氣泡噴射器之平面圖。3 is a perspective view illustrating an example embodiment of one of the bubble ejector of FIG. 2 and FIG. 4 is a plan view illustrating the bubble ejector of FIG.

參看圖1至圖4,每一氣泡噴射器120包括一噴射板122及在該噴射板122之表面上形成的複數個噴射噴嘴124。噴射板122之表面面向玻璃基材200之一者。Referring to FIGS. 1 through 4, each bubble ejector 120 includes a spray plate 122 and a plurality of spray nozzles 124 formed on the surface of the spray plate 122. The surface of the spray plate 122 faces one of the glass substrates 200.

噴射板122具有矩形板形狀。噴射板122具有形成於其中之氣體過道126。另外,噴射板122進一步包括一第二氣體入口孔128。第二氣體入口孔128在接觸固定板140之噴射板122之側面上形成以用於將氣體過道126連接至第一氣體入口孔144。The spray plate 122 has a rectangular plate shape. The spray plate 122 has a gas passage 126 formed therein. Additionally, the spray plate 122 further includes a second gas inlet aperture 128. A second gas inlet aperture 128 is formed on the side of the spray plate 122 that contacts the fixed plate 140 for connecting the gas aisle 126 to the first gas inlet aperture 144.

噴射噴嘴124連接至氣體過道126。噴射噴嘴124以一晶格結構在噴射板122上形成,用於將氣泡20均勻地噴射於玻璃基材200上。因此,氣體過道126亦自第二氣體入口孔128呈一直線形成。Injection nozzle 124 is coupled to gas passage 126. The ejection nozzle 124 is formed on the ejection plate 122 in a lattice structure for uniformly ejecting the bubble 20 onto the glass substrate 200. Therefore, the gas passage 126 is also formed in a straight line from the second gas inlet hole 128.

例如,氣體過道126可藉由習知鑽孔方法自第二氣體入口孔128在噴射板122中形成。然而,由於孔之縱橫比(定義為高寬比)為習知鑽孔方法之重要因素,因此當噴射板122之寬度太小或噴射板122之深度太深,而超過某一縱橫比時,氣體過道126可能不能藉由該鑽孔方法形成。在此狀況下,當氣體過道126沿垂直於鑽孔過程之方向分離成兩片以上時,氣體過道126可藉由習知鑽孔方法形成。或者,氣體過道126可使用具有優良縱橫比特徵之高精度加工中心來形成。For example, the gas aisle 126 can be formed in the spray plate 122 from the second gas inlet aperture 128 by conventional drilling methods. However, since the aspect ratio of the hole (defined as the aspect ratio) is an important factor in the conventional drilling method, when the width of the ejection plate 122 is too small or the depth of the ejection plate 122 is too deep to exceed a certain aspect ratio, Gas aisle 126 may not be formed by this drilling method. In this case, when the gas aisle 126 is separated into two or more pieces in a direction perpendicular to the drilling process, the gas aisle 126 can be formed by a conventional drilling method. Alternatively, the gas aisle 126 can be formed using a high precision machining center having excellent aspect ratio features.

或者,當氣體過道126可向每一噴射噴嘴124供應氣體30時,氣體過道126可具有多種結構。另外,當每一噴射噴嘴124以相同距離自相鄰噴射噴嘴124分離時,噴射噴嘴124可呈除晶格結構外之任意結構在噴射板122上形成。Alternatively, gas aisle 126 can have a variety of configurations when gas aisle 126 can supply gas 30 to each of injection nozzles 124. In addition, when each of the ejection nozzles 124 is separated from the adjacent ejection nozzles 124 by the same distance, the ejection nozzles 124 may be formed on the ejection plate 122 in any structure other than the lattice structure.

噴射噴嘴124可分為包括一變化噴射角型及一固定噴射角型之兩種類型。本發明之噴射噴嘴124較佳具有用於將氣泡20均勻地噴射於玻璃基材200上之固定噴射角型。然而,當必須根據噴射板122之位置控制噴射角時,變化噴射角型亦可用於本發明中。The spray nozzle 124 can be classified into two types including a change spray angle type and a fixed spray angle type. The spray nozzle 124 of the present invention preferably has a fixed spray angle type for uniformly spraying the bubble 20 onto the glass substrate 200. However, when it is necessary to control the injection angle in accordance with the position of the ejection plate 122, a varying injection angle type can also be used in the present invention.

噴射噴嘴124係以固定間隔呈晶格結構在噴射板122之表面上形成且噴射板122之表面面向玻璃基材200之一者,以便氣泡20可根據每一玻璃基材200之位置均勻地噴射於玻璃基材200上。因此,可藉由防止雜質黏附於玻璃基材200上且消除已黏附於玻璃基材200上之雜質來均勻蝕刻玻璃基材200。The ejection nozzles 124 are formed on the surface of the ejection plate 122 in a lattice structure at a fixed interval and the surface of the ejection plate 122 faces one of the glass substrates 200 so that the bubbles 20 can be uniformly ejected according to the position of each of the glass substrates 200. On the glass substrate 200. Therefore, the glass substrate 200 can be uniformly etched by preventing impurities from adhering to the glass substrate 200 and eliminating impurities adhering to the glass substrate 200.

圖5為說明圖2中之氣泡噴射器之一者的另一實例實施例之透視圖且圖6為說明圖5中之氣泡噴射器之平面圖。Figure 5 is a perspective view showing another example embodiment of one of the bubble ejector of Figure 2 and Figure 6 is a plan view illustrating the bubble ejector of Figure 5.

此實例實施例之複數個氣泡噴射器係在相同位置中安置但具有與在圖1中稱為參考數字120之氣泡噴射器不同之結構及形狀,且因此此實例實施例之氣泡噴射器係稱為參考數字130。The plurality of bubble ejector of this example embodiment is disposed in the same position but has a different configuration and shape than the bubble ejector referred to as reference numeral 120 in Fig. 1, and thus the bubble ejector of this example embodiment is For reference numeral 130.

參看圖1、圖5及圖6,每一氣泡噴射器130包括一框架132、一安置於該框架132中之第一管134、垂直連接於該第一管134之複數個第二管138。Referring to Figures 1, 5 and 6, each bubble ejector 130 includes a frame 132, a first tube 134 disposed in the frame 132, and a plurality of second tubes 138 vertically coupled to the first tube 134.

框架132具有在框架132之中心部分中形成之開口部分133。例如,框架132具有一矩形框架形狀。或者,框架132可具有一其中一對矩形桿相互平行安置之形狀。The frame 132 has an opening portion 133 formed in a central portion of the frame 132. For example, the frame 132 has a rectangular frame shape. Alternatively, the frame 132 may have a shape in which a pair of rectangular rods are disposed in parallel with each other.

第一管134連接至氣體供應部件150。第一管134平行於玻璃基材200安置。第一管134之至少一個邊緣部分係暴露於外部且第一管134之經暴露邊緣部分為第二氣體入口孔135,以便氣體30自氣體供應部件150施加於第二氣體入口孔135。接著,氣體30再施加於第二管138。The first tube 134 is connected to the gas supply part 150. The first tube 134 is disposed parallel to the glass substrate 200. At least one edge portion of the first tube 134 is exposed to the outside and the exposed edge portion of the first tube 134 is the second gas inlet hole 135 such that the gas 30 is applied from the gas supply member 150 to the second gas inlet hole 135. Gas 30 is then applied to second tube 138.

或者,第一管134之未暴露邊緣部分係用軟木136密封,用於防止氣體30漏出。在此狀況下,較佳使用聚矽氧環繞軟木136來密封。Alternatively, the unexposed edge portion of the first tube 134 is sealed with cork 136 for preventing gas 30 from escaping. In this case, it is preferred to use a polyxylene surround cork 136 for sealing.

第二管138係以固定間隔垂直連接於第一管134。另外,第二管138橫越框架132之開口部分133,用於將氣泡20噴射於玻璃基材200上。第二管138包括對應於面向每一玻璃基材之表面所形成之複數個噴射孔139。The second tube 138 is vertically connected to the first tube 134 at a fixed interval. In addition, the second tube 138 traverses the opening portion 133 of the frame 132 for spraying the air bubbles 20 onto the glass substrate 200. The second tube 138 includes a plurality of injection holes 139 formed corresponding to the surface facing each of the glass substrates.

例如,兩個第一管134係在第二管138之兩側部分安置且第二管138係在兩末端部分垂直連接至兩個第一管134。在此狀況下,每一第一管134之一個末端部分暴露於外部,且第一管134之每一暴露末端部分相互在相反方向上形成。第一管134之每一暴露邊緣部分為第二氣體入口孔135。For example, two first tubes 134 are disposed on both side portions of the second tube 138 and the second tube 138 is vertically connected to the two first tubes 134 at both end portions. In this case, one end portion of each of the first tubes 134 is exposed to the outside, and each of the exposed end portions of the first tubes 134 is formed in the opposite direction to each other. Each exposed edge portion of the first tube 134 is a second gas inlet aperture 135.

在此狀況下,自氣體供應部件150所施加之氣體壓力在穿過第一管134及第二管138時顯著降低,以便氣體壓力可根據噴射孔139之位置而不同。因此,安置兩個第一管134以防止氣體壓力不同。例如,氣泡20不均勻地噴射於玻璃基材200上,使得不均勻地蝕刻玻璃基材200。然而,當玻璃基材200之尺寸足夠小時,噴射孔139中之氣體壓力之差異幾乎可忽略,使得僅一個第一管134安置於第二管138之一個側邊部分處便足夠。Under this condition, the gas pressure applied from the gas supply member 150 is significantly lowered as it passes through the first tube 134 and the second tube 138, so that the gas pressure may differ depending on the position of the injection hole 139. Therefore, the two first tubes 134 are placed to prevent the gas pressure from being different. For example, the bubbles 20 are unevenly sprayed onto the glass substrate 200 such that the glass substrate 200 is unevenly etched. However, when the size of the glass substrate 200 is sufficiently small, the difference in gas pressure in the injection holes 139 is almost negligible, so that it is sufficient that only one first tube 134 is disposed at one side portion of the second tube 138.

噴射孔139係以固定間隔在每一第二管138中形成。氣泡20之注射壓力及尺寸視每一噴射孔139之尺寸而定。例如,噴射孔139可根據玻璃基材200之尺寸、厚度及蝕刻狀態而具有多種尺寸。The injection holes 139 are formed in each of the second tubes 138 at regular intervals. The injection pressure and size of the bubble 20 depends on the size of each of the injection holes 139. For example, the ejection holes 139 may have various sizes depending on the size, thickness, and etching state of the glass substrate 200.

因此,噴射孔139係以固定間隔在每一氣泡噴射器130之第二管138中形成,以便氣泡20可均勻地噴射於空氣基材200上。另外,每一氣泡噴射器130不同於圖3及圖4中之每一氣泡噴射器120,其具有第一管134及第二管138,氣體30穿過第一管134及第二管138且第一管134及第二管138可容易與框架132分離。因此,氣泡噴射器130具有可易於維護且維護費用亦可降低之優點。Therefore, the injection holes 139 are formed in the second tube 138 of each of the bubble ejector 130 at regular intervals so that the bubbles 20 can be uniformly sprayed on the air substrate 200. Additionally, each bubble ejector 130 differs from each of the bubble ejector 120 of FIGS. 3 and 4 in that it has a first tube 134 and a second tube 138 through which the gas 30 passes through the first tube 134 and the second tube 138 and The first tube 134 and the second tube 138 can be easily separated from the frame 132. Therefore, the bubble ejector 130 has the advantage that it can be easily maintained and the maintenance cost can be reduced.

圖7為說明使用根據本發明之第一實例實施例之設備蝕刻一基材之方法的流程圖。Figure 7 is a flow chart illustrating a method of etching a substrate using a device in accordance with a first example embodiment of the present invention.

參看圖1至圖7,使用根據本發明之第一實例實施例之基材蝕刻設備100蝕刻一基材之方法包括將複數個玻璃基材200定位於填充有蝕刻流體10之蝕刻容器110中(步驟S1)。在此狀況下,每一玻璃基材200相互平行地安置。另外,每一玻璃基材200垂直於蝕刻容器310之底部來安置。Referring to FIGS. 1 through 7, a method of etching a substrate using a substrate etching apparatus 100 in accordance with a first example embodiment of the present invention includes positioning a plurality of glass substrates 200 in an etching vessel 110 filled with an etching fluid 10 ( Step S1). In this case, each of the glass substrates 200 is placed in parallel with each other. Additionally, each glass substrate 200 is disposed perpendicular to the bottom of the etch vessel 310.

蝕刻基材之方法包括定位複數個氣泡噴射器120及氣泡噴射器130以插入每一玻璃基材200中(步驟S2)。The method of etching a substrate includes positioning a plurality of bubble ejector 120 and bubble ejector 130 for insertion into each glass substrate 200 (step S2).

接著,蝕刻該基材之方法包括自安置於蝕刻容器110外部之氣體供應部件150向氣泡噴射器120及氣泡噴射器130供應氣體(步驟S3)。Next, the method of etching the substrate includes supplying gas to the bubble ejector 120 and the bubble ejector 130 from the gas supply part 150 disposed outside the etching container 110 (step S3).

最後,蝕刻該基材之方法包括使用氣泡噴射器120及氣泡噴射器130將氣泡20噴射於玻璃基材200上用於消除雜質(步驟S4)。Finally, the method of etching the substrate includes spraying the bubble 20 onto the glass substrate 200 using the bubble ejector 120 and the bubble ejector 130 for eliminating impurities (step S4).

在此狀況下,當氣泡噴射器為在圖3及圖4中說明之實例實施例時,氣泡噴射器120及氣泡噴射器130經由複數個噴射噴嘴124噴射氣泡20。噴射噴嘴124係在噴射板122之表面上形成,該噴射板122具有一在噴射板122中連接至氣體供應部件150之氣體過道126且噴射板122之表面面向玻璃基材200之一者。In this case, when the bubble ejector is the example embodiment illustrated in FIGS. 3 and 4, the bubble ejector 120 and the bubble ejector 130 inject the bubble 20 via the plurality of injection nozzles 124. The spray nozzle 124 is formed on the surface of the spray plate 122 having a gas passage 126 connected to the gas supply member 150 in the spray plate 122 and the surface of the spray plate 122 facing one of the glass substrates 200.

或者,當氣泡噴射器為在圖5及圖6中說明之實例實施例時,氣泡噴射器120及氣泡噴射器130經由複數個噴射孔139噴射氣泡20。噴射孔139在複數個第二管138上形成以對應於面向每一玻璃基材200之表面。第二管138垂直連接至連接於氣體供應部件150之第一管134。Alternatively, when the bubble ejector is the example embodiment illustrated in FIGS. 5 and 6, the bubble ejector 120 and the bubble ejector 130 inject the bubble 20 through the plurality of injection holes 139. The injection holes 139 are formed on the plurality of second tubes 138 to correspond to the surface facing each of the glass substrates 200. The second tube 138 is vertically connected to the first tube 134 that is connected to the gas supply member 150.

圖8為說明根據本發明之第二實例實施例用於蝕刻一基材之設備的正視圖,圖9為說明圖8中之氣泡噴射管及玻璃基材之透視圖,且圖10為尤其說明圖9中之氣泡噴射管之噴射孔的側視圖。Figure 8 is a front view showing an apparatus for etching a substrate according to a second exemplary embodiment of the present invention, and Figure 9 is a perspective view showing the bubble jet tube and the glass substrate of Figure 8, and Figure 10 is particularly illustrative Fig. 9 is a side view of the injection hole of the bubble jet tube.

根據本發明之第二實例實施例,除用於噴射氣泡於玻璃基材上之結構外,用於蝕刻一基材之設備與以上在圖1至圖6中所解釋之第一實例實施例相同。因此,相同參考數字將用以指示如彼等在第一實例實施例中描述之相同或相似部件且將會省略涉及以上元件之任何另外之重複解釋。According to a second exemplary embodiment of the present invention, the apparatus for etching a substrate is the same as the first example embodiment explained above in FIGS. 1 to 6 except for the structure for ejecting bubbles on the glass substrate. . Therefore, the same reference numerals will be used to refer to the same or similar components as those described in the first example embodiment and any additional repetitive explanation relating to the above elements will be omitted.

參看圖8至10,根據本發明之第二實例實施例之基材蝕刻設備300包括一蝕刻容器310、一氣泡噴射管320及一氣體供應部件150。蝕刻容器310容納垂直於該蝕刻容器310之底部312且相互平行的複數個玻璃基材200。氣泡噴射管320沿玻璃基材200之垂直方向縱向形成。氣體供應部件150安置於蝕刻容器310之外部,用於向氣泡噴射管320供應氣體30。在此狀況下,蝕刻流體10填充蝕刻容器310,用於蝕刻玻璃基材200。Referring to FIGS. 8 through 10, a substrate etching apparatus 300 according to a second exemplary embodiment of the present invention includes an etching vessel 310, a bubble jet pipe 320, and a gas supply member 150. The etch vessel 310 houses a plurality of glass substrates 200 that are perpendicular to the bottom 312 of the etch vessel 310 and that are parallel to one another. The bubble jet pipe 320 is formed longitudinally in the vertical direction of the glass substrate 200. The gas supply part 150 is disposed outside the etching vessel 310 for supplying the gas 30 to the bubble injection pipe 320. In this case, the etching fluid 10 fills the etching vessel 310 for etching the glass substrate 200.

氣泡噴射管320係安置於玻璃基材200之一個側邊處,用於將氣泡20噴射於玻璃基材200上。或者,如在本發明之第二實例實施例中,複數個氣泡噴射管320可各別地安置於玻璃基材200之兩側。氣泡噴射管320將氣泡20噴射於相互平行安置之玻璃基材200間之空間中。The bubble jet tube 320 is disposed at one side of the glass substrate 200 for spraying the bubble 20 onto the glass substrate 200. Alternatively, as in the second exemplary embodiment of the present invention, a plurality of bubble jet tubes 320 may be separately disposed on both sides of the glass substrate 200. The bubble jet pipe 320 sprays the bubble 20 into a space between the glass substrates 200 disposed in parallel with each other.

因此,氣泡噴射管320係平行於玻璃基材200之表面噴射氣泡20,以便防止雜質再黏附於玻璃基材200之表面上且消除已黏附於表面之雜質。另外,氣泡噴射管320包括不被包括HF之蝕刻流體10所蝕刻之聚氯乙烯(PVC)。Therefore, the bubble jet pipe 320 sprays the bubble 20 parallel to the surface of the glass substrate 200 in order to prevent the impurities from adhering to the surface of the glass substrate 200 and to eliminate impurities adhering to the surface. In addition, the bubble jet tube 320 includes polyvinyl chloride (PVC) that is not etched by the etching fluid 10 including HF.

氣泡噴射管320包括複數個噴射孔334。噴射孔334係以固定間隔在氣泡噴射管320上形成。氣泡噴射管320可包括具有噴射角之複數個噴射噴嘴來替代噴射孔334。The bubble jet tube 320 includes a plurality of spray holes 334. The injection holes 334 are formed on the bubble jet pipe 320 at regular intervals. The bubble jet tube 320 may include a plurality of jet nozzles having an injection angle instead of the spray holes 334.

氣泡噴射管320連接至氣體入口管線332,以便藉由氣體供應部件150向氣泡噴射管320供應氣體30。氣體供應管線152連接至氣體供應部件150,且氣體入口管線332藉由額外夾鉗330而與氣體供應管線152組合。因此,氣泡噴射管320及氣體供應部件150可相互分離,以便可容易地解決供應氣體30中之問題。在此狀況下,夾鉗330通常具有環形狀,但為方便起見夾鉗330可具有閂扣形狀。The bubble injection pipe 320 is connected to the gas inlet line 332 to supply the gas 30 to the bubble injection pipe 320 by the gas supply part 150. Gas supply line 152 is coupled to gas supply component 150 and gas inlet line 332 is combined with gas supply line 152 by additional clamps 330. Therefore, the bubble jet pipe 320 and the gas supply member 150 can be separated from each other so that the problem in the supply gas 30 can be easily solved. In this case, the clamp 330 generally has a ring shape, but the clamp 330 may have a latch shape for convenience.

或者,氣體入口管線332及氣體供應管線152可由一快速耦合類型之組合而相互組合。由於高氣體壓力,因此快速耦合類型之組合可比夾鉗330類型之組合更容易分離且由此應在氣體供應部件150中安置額外安全器件(未圖示)。例如,安全器件可在氣體供應部件150中安置,用於當氣體壓力超過預定水平時,將氣體供應部件150中之氣體吹出。Alternatively, gas inlet line 332 and gas supply line 152 may be combined with one another by a combination of rapid coupling types. Due to the high gas pressure, the combination of the quick coupling types can be more easily separated than the combination of the clamps 330 type and thus additional safety devices (not shown) should be placed in the gas supply component 150. For example, a safety device may be disposed in the gas supply member 150 for blowing out the gas in the gas supply member 150 when the gas pressure exceeds a predetermined level.

基材蝕刻設備300進一步包括一轉移器件340。轉移器件340沿玻璃基材200之側邊轉移氣泡噴射管320。在此狀況下,第一方向40係定義為沿玻璃基材200之側邊之轉移方向。Substrate etching apparatus 300 further includes a transfer device 340. The transfer device 340 transfers the bubble jet tube 320 along the side of the glass substrate 200. In this case, the first direction 40 is defined as the direction of transfer along the sides of the glass substrate 200.

轉移器件340包括一汽缸342、一汽缸負載344、一連接部件346及一導引部件348。汽缸342安置於蝕刻容器310之外側。汽缸負載344與汽缸342組合且沿第一方向40轉移。連接部件346連接汽缸負載344與氣泡噴射管320。導引部件348部分覆蓋連接部件346且導引氣泡噴射管320沿第一方向40移動。The transfer device 340 includes a cylinder 342, a cylinder load 344, a connecting member 346, and a guiding member 348. The cylinder 342 is disposed on the outer side of the etching vessel 310. Cylinder load 344 is combined with cylinder 342 and shifted in a first direction 40. The connecting member 346 connects the cylinder load 344 and the bubble jet pipe 320. The guiding member 348 partially covers the connecting member 346 and guides the bubble jet pipe 320 to move in the first direction 40.

汽缸342經由活塞移動誘發直線移動。汽缸342通常為油壓型及氣壓型,但在本發明中,當汽缸342沿第一方向40低速移動時,汽缸342較佳為氣壓型。由操作者程式設計之額外印刷電路板可控制用於油壓或氣壓之油或空氣之進入方向。另外,轉移器件340可進一步包括一可控制氣泡噴射管320之速度之調節器。氣泡噴射管320之速度可藉由改變供應至汽缸342之油或空氣之量得以控制。The cylinder 342 induces a linear movement via piston movement. The cylinder 342 is generally of the oil pressure type and the air pressure type, but in the present invention, when the cylinder 342 moves at a low speed in the first direction 40, the cylinder 342 is preferably of a pneumatic type. An additional printed circuit board designed by the operator controls the direction of entry of oil or air for oil or air pressure. Additionally, the transfer device 340 can further include a regulator that controls the velocity of the bubble jet tube 320. The speed of the bubble jet tube 320 can be controlled by varying the amount of oil or air supplied to the cylinder 342.

在本發明之實例實施例中,兩個汽缸342可相互面向地安置於蝕刻容器310之兩側。然而,相對低功率足以移動氣泡噴射管320,以便一個汽缸342可安置於蝕刻容器310之一側邊。In an example embodiment of the invention, two cylinders 342 may be disposed facing each other on either side of the etch vessel 310. However, the relatively low power is sufficient to move the bubble jet tube 320 such that one cylinder 342 can be disposed on one side of the etch vessel 310.

汽缸負載344及汽缸342係同時製造,且汽缸負載344促使汽缸342直線移動至外部。連接部件346之第一邊緣與汽缸負載344組合,且連接部件346之第二邊緣與氣泡噴射管320之邊緣組合。在此狀況下,連接部件346可使用一螺釘與汽缸負載344及氣泡噴射管320組合。由於連接部件346在其中具有蝕刻流體10,因此連接部件346包括一樹脂材料以避免被包括HF之蝕刻流體10蝕刻。Cylinder load 344 and cylinder 342 are manufactured simultaneously, and cylinder load 344 causes cylinder 342 to move linearly to the exterior. The first edge of the connecting member 346 is combined with the cylinder load 344, and the second edge of the connecting member 346 is combined with the edge of the bubble jet tube 320. In this case, the connecting member 346 can be combined with the cylinder load 344 and the bubble jet tube 320 using a screw. Since the connecting member 346 has the etching fluid 10 therein, the connecting member 346 includes a resin material to avoid etching by the etching fluid 10 including HF.

導引部件348包括一導引凹槽(未圖示),其具有大體上與氣泡噴射管320之直徑相同之寬度或比氣泡噴射管320之直徑稍微大之寬度。因此,導引部件348保持氣泡噴射管320之直線移動以避免諸如連接部件346自氣泡噴射管320分離及玻璃基材200被氣泡噴射管320損壞之問題。由於導引部件348亦在其中具有蝕刻流體10,因此導引部件348包括一樹脂材料以避免被包括HF之蝕刻流體10蝕刻。The guiding member 348 includes a guiding groove (not shown) having a width substantially the same as the diameter of the bubble jet pipe 320 or a width slightly larger than the diameter of the bubble jet pipe 320. Therefore, the guiding member 348 maintains the linear movement of the bubble jet pipe 320 to avoid problems such as separation of the connecting member 346 from the bubble jet pipe 320 and damage of the glass substrate 200 by the bubble jet pipe 320. Since the guiding member 348 also has the etching fluid 10 therein, the guiding member 348 includes a resin material to avoid etching by the etching fluid 10 including HF.

因此,氣泡噴射管320經安置對應於玻璃基材200之兩側且藉由使用轉移器件340,沿第一方向40將氣泡20均勻地噴射於玻璃基材200上,以便防止雜質再黏附於玻璃基材200上且消除已黏附於玻璃基材200上之雜質。Therefore, the bubble jet tube 320 is disposed to correspond to both sides of the glass substrate 200 and uniformly sprays the bubble 20 on the glass substrate 200 in the first direction 40 by using the transfer device 340 to prevent the impurities from adhering to the glass again. The substrate 200 is coated with impurities that have adhered to the glass substrate 200.

或者,轉移器件340可使用可容易控制速度、時間及旋轉方向之伺服馬達沿第一方向40移動氣泡噴射管320。例如,轉移器件340經由一直齒輪將伺服馬達之旋轉功率施加於齒條上以將圓形移動轉化成直線移動,以便轉移器件340可移動氣泡噴射管320。Alternatively, transfer device 340 can move bubble jet tube 320 in a first direction 40 using a servo motor that can easily control speed, time, and direction of rotation. For example, the transfer device 340 applies the rotational power of the servo motor to the rack via a slewing gear to convert the circular movement into a linear movement so that the transfer device 340 can move the bubble jet tube 320.

基材蝕刻設備300可包括在圖1至圖6中說明之氣泡噴射器120及氣泡噴射器130來替代本發明之第二實例實施例之氣泡噴射管320。The substrate etching apparatus 300 may include the bubble ejector 120 and the bubble ejector 130 illustrated in FIGS. 1 to 6 in place of the bubble jet tube 320 of the second example embodiment of the present invention.

圖11為說明根據本發明之第三實例實施例之用於蝕刻一基材之設備的正視圖。Figure 11 is a front elevational view showing an apparatus for etching a substrate in accordance with a third example embodiment of the present invention.

本發明實例實施例包括圖1至圖6中說明之第一實例實施例及圖8至圖10中說明之第二實例實施例,且因此相同參考數字將用以指示如彼等在第一實例實施例中描述之相同或相似部件且將省略關於以上元件之任何其他重複解釋。Example embodiments of the present invention include the first example embodiment illustrated in FIGS. 1 through 6 and the second example embodiment illustrated in FIGS. 8 through 10, and thus the same reference numerals will be used to indicate that they are in the first instance The same or similar components are described in the embodiments and any other repeated explanation about the above elements will be omitted.

參看圖11,根據本發明之第三實例實施例之基材蝕刻設備400填充有蝕刻流體10且包括蝕刻容器310、氣泡噴射器120及氣泡噴射管320。蝕刻容器310容納複數個垂直於底部312且相互平行安置之玻璃基材200。每一氣泡噴射器120插入每一玻璃基材200中。氣泡噴射管320經安置對應於玻璃基材200之兩側。Referring to FIG. 11, a substrate etching apparatus 400 according to a third example embodiment of the present invention is filled with an etching fluid 10 and includes an etching vessel 310, a bubble ejector 120, and a bubble jetting pipe 320. The etch vessel 310 houses a plurality of glass substrates 200 disposed perpendicular to the bottom 312 and disposed in parallel with one another. Each bubble ejector 120 is inserted into each glass substrate 200. The bubble jet tube 320 is disposed to correspond to both sides of the glass substrate 200.

因此,氣泡噴射器120及氣泡噴射管320係由氣體供應部件150來供應氣體30且可將氣泡20均勻地噴射於玻璃基材200上,用於防止雜質再黏附於玻璃基材200上且消除已黏附於玻璃基材200上之雜質,以便可均勻蝕刻基材。Therefore, the bubble ejector 120 and the bubble jet pipe 320 supply the gas 30 from the gas supply member 150 and can uniformly spray the bubble 20 onto the glass substrate 200 for preventing the impurities from adhering to the glass substrate 200 and eliminating The impurities adhered to the glass substrate 200 so that the substrate can be uniformly etched.

然而,第三實例實施例之基材蝕刻設備400由於其複雜結構可更頻繁地毀壞。另外,額外增壓器件可為氣體供應部件150所必需的以同時向氣泡噴射器120及氣泡噴射管320供應氣體30。However, the substrate etching apparatus 400 of the third example embodiment can be destroyed more frequently due to its complicated structure. Additionally, an additional boosting device may be necessary for the gas supply component 150 to simultaneously supply the gas 30 to the bubble ejector 120 and bubble jet tube 320.

圖12為說明使用根據本發明之第二實例實施例之設備蝕刻一基材之方法的流程圖。Figure 12 is a flow chart illustrating a method of etching a substrate using an apparatus in accordance with a second example embodiment of the present invention.

參看圖8至圖10及圖12,使用根據本發明之第二實例實施例之基材蝕刻設備300蝕刻一基材之方法包括將複數個玻璃基材200定位於填充有蝕刻流體10之蝕刻容器310中(步驟S10)。在此狀況下,每一玻璃基材200相互平行地安置。另外,每一玻璃基材200垂直於蝕刻容器310之底部312安置。Referring to FIGS. 8-10 and 12, a method of etching a substrate using a substrate etching apparatus 300 in accordance with a second example embodiment of the present invention includes positioning a plurality of glass substrates 200 in an etching vessel filled with an etching fluid 10. 310 (step S10). In this case, each of the glass substrates 200 is placed in parallel with each other. Additionally, each glass substrate 200 is disposed perpendicular to the bottom 312 of the etch vessel 310.

蝕刻基材之方法包括定位兩個氣泡噴射管320以分別對應於玻璃基材200之兩側(步驟S20)。The method of etching the substrate includes positioning the two bubble jet tubes 320 to correspond to both sides of the glass substrate 200, respectively (step S20).

接著,蝕刻基材之方法包括沿玻璃基材200之側邊(例如,沿第一方向40)轉移氣泡噴射管320且將氣泡20噴射於玻璃基材200上用於消除雜質(步驟S30)。Next, the method of etching the substrate includes transferring the bubble jet tube 320 along the side of the glass substrate 200 (for example, in the first direction 40) and spraying the bubble 20 onto the glass substrate 200 for eliminating impurities (step S30).

在此狀況下,氣泡噴射管320係以大體上相同之速度轉移。尤其,氣泡噴射管320大體上同時自玻璃基材200之較低部分啟動且以大體上相同之速度移動至玻璃基材200之上部用於消除雜質。In this case, the bubble jet tubes 320 are transferred at substantially the same speed. In particular, the bubble jet tube 320 is activated substantially simultaneously from the lower portion of the glass substrate 200 and is moved to the upper portion of the glass substrate 200 at substantially the same speed for the elimination of impurities.

或者,氣泡噴射管320可在固定時間差下移動用於最小化氣泡20間之干擾。尤其,在第一側邊處之氣泡噴射管320首先開始移動後,在第二側邊之氣泡噴射管320可以一時間延遲而開始移動。另外,氣泡噴射管320可在彼此相反之方向上移動。在此狀況下,當玻璃基材200安置於蝕刻容器310中時,雜質係藉由蝕刻玻璃基材200而產生。Alternatively, the bubble jet tube 320 can be moved for a fixed time difference to minimize interference between the bubbles 20. In particular, after the bubble jet tube 320 at the first side first starts moving, the bubble jet tube 320 on the second side can start moving with a time delay. In addition, the bubble jet tubes 320 are movable in directions opposite to each other. In this case, when the glass substrate 200 is placed in the etching container 310, impurities are generated by etching the glass substrate 200.

因此,使用根據第二實例實施例之基材蝕刻設備300用於蝕刻基材之方法可藉由僅僅改變氣泡噴射管320之長度來修改以適用於各種尺寸之基材,以便可均勻蝕刻基材同時降低甚至用於較大玻璃基材200之設備的製造成本。Therefore, the method of etching the substrate using the substrate etching apparatus 300 according to the second example embodiment can be modified to be applied to substrates of various sizes by merely changing the length of the bubble jet tube 320 so that the substrate can be uniformly etched At the same time, the manufacturing cost of equipment even for larger glass substrates 200 is reduced.

隨後,已經蝕刻之玻璃基材200係由DI清潔且接著乾燥。當玻璃基材200為LCD面板之TFT基材或彩色濾光片基材時,基材蝕刻設備300可適用於LCD製造方法。Subsequently, the glass substrate 200 that has been etched is cleaned by DI and then dried. When the glass substrate 200 is a TFT substrate or a color filter substrate of an LCD panel, the substrate etching apparatus 300 can be applied to an LCD manufacturing method.

根據本發明之用於蝕刻基材之設備及使用該設備用於蝕刻基材之方法,每一氣泡噴射器係插入每一玻璃基材中且將氣泡噴射於玻璃基材上,用於防止藉由蝕刻玻璃基材所產生之雜質再黏附於玻璃基材上且消除已黏附於玻璃基材上之雜質。因此,可均勻蝕刻玻璃基材。According to the apparatus for etching a substrate of the present invention and a method of etching the substrate using the apparatus, each bubble ejector is inserted into each of the glass substrates and sprayed on the glass substrate for preventing borrowing The impurities generated by etching the glass substrate are then adhered to the glass substrate and the impurities that have adhered to the glass substrate are eliminated. Therefore, the glass substrate can be uniformly etched.

已描述本發明之實例實施例及其優勢,應注意可在不脫離如由附加申請專利範圍所定義之本發明之精神及範疇之情況下,進行各種改變、替代及變更。Having described the example embodiments of the present invention and its advantages, it is to be understood that various changes, substitutions and changes may be made without departing from the spirit and scope of the invention as defined by the appended claims.

10...蝕刻流體10. . . Etching fluid

20...氣泡20. . . bubble

30...氣體30. . . gas

40...第一方向40. . . First direction

100...基材蝕刻設備/蝕刻設備100. . . Substrate etching equipment / etching equipment

110...蝕刻容器110. . . Etching container

112...底部表面112. . . Bottom surface

114...側壁114. . . Side wall

120...氣泡噴射器120. . . Bubble ejector

122...噴射板122. . . Spray plate

124...噴射噴嘴124. . . Spray nozzle

126...氣體過道126. . . Gas aisle

128...第二氣體入口128. . . Second gas inlet

130...氣泡噴射器130. . . Bubble ejector

132...框架132. . . frame

133...開口部分133. . . Opening part

134...第一管134. . . First tube

135...第二氣體入口135. . . Second gas inlet

136...軟木136. . . cork

138...第二管138. . . Second tube

139...噴射孔139. . . Spray hole

140...固定板140. . . Fixed plate

142...固定夾142. . . Securing clip

143...固定凹槽143. . . Fixed groove

144...第一氣體入口144. . . First gas inlet

150...氣體供應部件150. . . Gas supply unit

152...氣體供應管線152. . . Gas supply line

160...過濾器160. . . filter

170...儲存槽170. . . Storage tank

180...泵180. . . Pump

200...玻璃基材200. . . Glass substrate

300...基材蝕刻設備300. . . Substrate etching equipment

310...蝕刻容器310. . . Etching container

312...底部312. . . bottom

320...氣泡噴射管320. . . Bubble jet tube

330...夾鉗330. . . clamp

332...氣體入口管線332. . . Gas inlet line

334...噴射孔334. . . Spray hole

340...轉移器件340. . . Transfer device

342...汽缸342. . . cylinder

344...汽缸負載344. . . Cylinder load

346...連接部件346. . . Connecting part

348...導引部件348. . . Guide member

400...基材蝕刻設備400. . . Substrate etching equipment

圖1為說明根據本發明之第一實例實施例之用於蝕刻一基材之設備的正視圖;圖2為說明圖1中之玻璃基材、氣泡噴射器及固定板之分解透視圖;圖3為說明圖2中之每一氣泡噴射器的實例實施例之透視圖;圖4為說明圖3中之氣泡噴射器之平面圖;圖5為說明圖2中之氣泡噴射器之一者的另一實例實施例之透視圖;圖6為說明圖5中之氣泡噴射器之平面圖;圖7為說明使用根據本發明之第一實例實施例之設備蝕刻一基材之方法的流程圖;圖8為說明根據本發明之第二實例實施例之用於蝕刻一基材之設備的正視圖;圖9為說明圖8中之氣泡噴射管及玻璃基材之透視圖;圖10為尤其說明圖9中之氣泡噴射管之噴射孔的側視圖;圖11為說明根據本發明之第三實例實施例之用於蝕刻一基材之設備的正視圖;及圖12為說明使用根據本發明之第二實例實施例之設備蝕刻一基材之方法的流程圖。1 is a front elevational view showing an apparatus for etching a substrate according to a first exemplary embodiment of the present invention; FIG. 2 is an exploded perspective view showing the glass substrate, bubble jet, and fixing plate of FIG. 1; 3 is a perspective view illustrating an example embodiment of each bubble ejector in FIG. 2; FIG. 4 is a plan view illustrating the bubble ejector of FIG. 3; and FIG. 5 is another view illustrating one of the bubble ejector of FIG. A perspective view of an example embodiment; FIG. 6 is a plan view illustrating the bubble ejector of FIG. 5; and FIG. 7 is a flow chart illustrating a method of etching a substrate using the apparatus according to the first example embodiment of the present invention; A front view of an apparatus for etching a substrate according to a second exemplary embodiment of the present invention; FIG. 9 is a perspective view illustrating the bubble jet tube and the glass substrate of FIG. 8; FIG. Side view of the injection hole of the bubble jet tube; FIG. 11 is a front view showing an apparatus for etching a substrate according to a third example embodiment of the present invention; and FIG. 12 is a view illustrating the use of the second aspect according to the present invention. Method of etching a substrate by an apparatus of an example embodiment flow chart.

10...蝕刻流體10. . . Etching fluid

20...氣泡20. . . bubble

30...氣體30. . . gas

100...基材蝕刻設備/蝕刻設備100. . . Substrate etching equipment / etching equipment

110...蝕刻容器110. . . Etching container

112...底部表面112. . . Bottom surface

114...側壁114. . . Side wall

120...氣泡噴射器120. . . Bubble ejector

140...固定板140. . . Fixed plate

142...固定夾142. . . Securing clip

150...氣體供應部件150. . . Gas supply unit

160...過濾器160. . . filter

170...儲存槽170. . . Storage tank

180...泵180. . . Pump

200...玻璃基材200. . . Glass substrate

Claims (21)

一種用於蝕刻一基材之設備,其包含:一蝕刻容器,其容納複數個玻璃基材,使得該等玻璃基材係垂直於該蝕刻容器之一底部表面且在該蝕刻容器中相互平行地安置;複數個氣泡噴射器,其每一者係插入該等玻璃基材之每一者中,用於將氣泡噴射於該等玻璃基材上;及一氣體供應部件,其係安置於該蝕刻容器之外部,用於向該等氣泡噴射器供應一氣體。An apparatus for etching a substrate, comprising: an etching vessel that houses a plurality of glass substrates such that the glass substrates are perpendicular to a bottom surface of the etching vessel and parallel to each other in the etching vessel Positioning; a plurality of bubble jets, each of which is inserted into each of the glass substrates for spraying bubbles onto the glass substrates; and a gas supply member disposed on the etching Outside the container for supplying a gas to the bubble ejector. 如請求項1之設備,其中該等氣泡噴射器之每一者包括:一噴射板,其具有一在該噴射板中形成之氣體過道;及複數個噴射噴嘴,其係在該噴射板之一表面上形成,該表面面向該等玻璃基材之一者,且該等噴射噴嘴係連接至該氣體過道。The apparatus of claim 1, wherein each of the bubble ejector comprises: a spray plate having a gas passage formed in the spray plate; and a plurality of spray nozzles attached to the spray plate Formed on a surface that faces one of the glass substrates, and the spray nozzles are coupled to the gas passage. 如請求項2之設備,其中該等噴射噴嘴係以一晶格結構在該噴射板上形成。The apparatus of claim 2, wherein the spray nozzles are formed on the spray plate in a lattice structure. 如請求項2之設備,其進一步包含一安置於該蝕刻容器內部且具有形成於其上之固定夾的固定板,該等固定夾係用於固定該等玻璃基材。The apparatus of claim 2, further comprising a fixing plate disposed inside the etching container and having a fixing clip formed thereon, the fixing clips for fixing the glass substrates. 如請求項4之設備,其中該固定板包括一連接該氣體供應部件與該等氣泡噴射器之每一者之該氣體過道的氣體入口孔。The apparatus of claim 4, wherein the fixed plate includes a gas inlet opening connecting the gas supply member and the gas passage of each of the bubble ejector. 如請求項1之設備,其中該等氣泡噴射器之每一者包括:一框架,其具有一在該框架之一中心部分中形成之開口部分;一第一管,其係安置於該框架中且連接至該氣體供應部件;及第二管,其係以固定間隔垂直連接至該第一管以橫越該開口部分且具有經成形以對應於該等玻璃基材之每一者之相對表面的複數個噴射孔。The apparatus of claim 1, wherein each of the bubble ejector comprises: a frame having an opening portion formed in a central portion of the frame; a first tube disposed in the frame And connected to the gas supply member; and a second tube vertically connected to the first tube at a fixed interval to traverse the opening portion and having an opposite surface shaped to correspond to each of the glass substrates a plurality of injection holes. 如請求項6之設備,其中該等噴射孔係以固定間隔在該等第二管上形成。The apparatus of claim 6, wherein the injection holes are formed on the second tubes at regular intervals. 如請求項1之設備,其中該蝕刻容器填充有蝕刻流體且包括氫氟酸(HF)。The apparatus of claim 1, wherein the etching vessel is filled with an etching fluid and comprises hydrofluoric acid (HF). 如請求項8之設備,其中該等氣泡噴射器包括聚氯乙烯(PVC)。The apparatus of claim 8 wherein the bubble jets comprise polyvinyl chloride (PVC). 一種用於蝕刻一基材之設備,其包含:一蝕刻容器,其容納複數個玻璃基材,使得該等玻璃基材係垂直於該蝕刻容器之一底部表面且在該蝕刻容器中相互平行地安置;一氣泡噴射管,其沿該等玻璃基材之一垂直方向縱向成形且係安置於該等玻璃基材之一側,用於將氣泡噴射於該等玻璃基材上;及一氣體供應部件,其係安置於該蝕刻容器之外部,用於向該氣泡噴射管供應一氣體。An apparatus for etching a substrate, comprising: an etching vessel that houses a plurality of glass substrates such that the glass substrates are perpendicular to a bottom surface of the etching vessel and parallel to each other in the etching vessel Positioning; a bubble jet tube longitudinally formed along one of the glass substrates in a vertical direction and disposed on one side of the glass substrates for spraying bubbles onto the glass substrates; and a gas supply A component is disposed outside the etching vessel for supplying a gas to the bubble jet tube. 如請求項10之設備,其中複數個該等氣泡噴射管係安置於該等玻璃基材之兩側,用於將該等氣泡噴射於該等玻璃基材上。The apparatus of claim 10, wherein a plurality of the bubble jet tubes are disposed on opposite sides of the glass substrate for spraying the bubbles onto the glass substrates. 如請求項10之設備,其中該氣泡噴射管包括複數個噴射孔,該等噴射孔係以固定間隔形成以面向該等玻璃基材之該側。The apparatus of claim 10, wherein the bubble jet tube comprises a plurality of spray holes formed at regular intervals to face the side of the glass substrate. 如請求項12之設備,其進一步包含一轉移器件,其係用於沿該等玻璃基材之該側轉移該氣泡噴射管。The apparatus of claim 12, further comprising a transfer device for transferring the bubble jet along the side of the glass substrates. 如請求項13之設備,其中該轉移器件包括:一汽缸,其係安置於該蝕刻容器之一外側;一與該汽缸組合之汽缸負載,其係沿該等玻璃基材之該側轉移;一連接部件,其係用於連接該汽缸負載與該氣泡噴射管;及一導引部件,其係用於部分覆蓋該連接部件且導引該氣泡噴射管之移動。The apparatus of claim 13 wherein the transfer device comprises: a cylinder disposed outside one of the etched containers; a cylinder load coupled to the cylinder that is transferred along the side of the glass substrate; a connecting member for connecting the cylinder load to the bubble jet tube; and a guiding member for partially covering the connecting member and guiding movement of the bubble jet tube. 如請求項14之設備,其中該汽缸係由一氣壓型及一油壓型之至少一者來驅動。The apparatus of claim 14, wherein the cylinder is driven by at least one of a pneumatic type and an oil pressure type. 如請求項10之設備,其進一步包含複數個氣泡噴射器,其每一者係插入該等玻璃基材之每一者中,用於將該等氣泡噴射於該等玻璃基材上。The apparatus of claim 10, further comprising a plurality of bubble jets, each of which is inserted into each of the glass substrates for spraying the bubbles onto the glass substrates. 一種用於蝕刻一基材之方法,其包含:垂直於一蝕刻容器之一底部表面定位複數個玻璃基材,該等玻璃基材係相互平行地安置;定位複數個氣泡噴射器之每一者以插入該等玻璃基材之每一者中;自一安置於該蝕刻容器外部之氣體供應部件供應一氣體至該等氣泡噴射器;及使用該等氣泡噴射器將氣泡噴射於該等玻璃基材上用於消除雜質。A method for etching a substrate, comprising: positioning a plurality of glass substrates perpendicular to a bottom surface of an etched container, the glass substrates being disposed in parallel with each other; positioning each of the plurality of bubble ejector Inserting into each of the glass substrates; supplying a gas to the bubble ejector from a gas supply member disposed outside the etch vessel; and spraying the bubbles onto the glass substrates using the bubble ejector The material is used to eliminate impurities. 如請求項17之方法,其中該等氣泡噴射器之每一者經由形成於該等噴射板之一表面上的複數個噴射噴嘴噴射該等氣泡,該表面面向該等玻璃基材之一者,且該噴射板具有一在該噴射板中之氣體過道,該氣體過道係連接至該氣體供應部件。The method of claim 17, wherein each of the bubble jets ejects the bubbles via a plurality of jet nozzles formed on a surface of the spray plates, the surface facing one of the glass substrates, And the spray plate has a gas passage in the spray plate, the gas passage being connected to the gas supply member. 如請求項17之方法,其中該等氣泡噴射器之每一者經由複數個噴射孔噴射該等氣泡,該等噴射孔係形成於複數個第二管上以對應於該等玻璃基材之每一者之相對表面,該等第二管係垂直連接至一連接至該氣體供應部件之第一管。The method of claim 17, wherein each of the bubble ejector ejects the bubbles via a plurality of ejection orifices formed on the plurality of second tubes to correspond to each of the glass substrates The opposite surface of one of the second tubes is vertically connected to a first tube connected to the gas supply member. 一種用於蝕刻一基材之方法,其包含:垂直於一蝕刻容器之一底部表面定位複數個玻璃基材,該等玻璃基材係相互平行地安置;定位兩個氣泡噴射管以分別對應於該等玻璃基材之兩側;及沿該等玻璃基材之該側轉移該等氣泡噴射管且將氣泡噴射於該等玻璃基材上用於消除雜質。A method for etching a substrate, comprising: positioning a plurality of glass substrates perpendicular to a bottom surface of an etching container, the glass substrates being disposed in parallel with each other; positioning two bubble jet tubes to respectively correspond to The two sides of the glass substrate; and the bubble jets are transferred along the side of the glass substrates and bubbles are sprayed onto the glass substrates for the elimination of impurities. 如請求項20之方法,其中該等氣泡噴射管係以大體上相同之速度轉移。The method of claim 20, wherein the bubble jet tubes are transferred at substantially the same speed.
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JP2007300118A (en) 2007-11-15
JP4980783B2 (en) 2012-07-18

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