TWI331595B - - Google Patents

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Publication number
TWI331595B
TWI331595B TW096126251A TW96126251A TWI331595B TW I331595 B TWI331595 B TW I331595B TW 096126251 A TW096126251 A TW 096126251A TW 96126251 A TW96126251 A TW 96126251A TW I331595 B TWI331595 B TW I331595B
Authority
TW
Taiwan
Prior art keywords
substrate
专 利
利 专
验 验
space
Prior art date
Application number
TW096126251A
Other languages
Chinese (zh)
Other versions
TW200904740A (en
Inventor
Jiungyue Tien
Hsichen Yang
Original Assignee
Lingsen Precision Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lingsen Precision Ind Ltd filed Critical Lingsen Precision Ind Ltd
Priority to TW096126251A priority Critical patent/TWI331595B/zh
Publication of TW200904740A publication Critical patent/TW200904740A/zh
Application granted granted Critical
Publication of TWI331595B publication Critical patent/TWI331595B/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00309Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0257Microphones or microspeakers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16151Cap comprising an aperture, e.g. for pressure control, encapsulation

Description

1331595 IX. Description of the invention: [Technical field to which the invention pertains], in particular, a method for forming a channel for an electromechanical stacking substrate relating to a micro-electromechanical module. [Prior Art] In order to improve the performance of MEMS modules, MEMS components must be considered for mechanical support as well as environmental factors (for example: , , , , , , , , , , , , , , , , , , , , , , , , , , The receiving external signal must be received from below, so a curved sensing channel must be formed on the substrate and connected to the underside of the MEMS wafer to achieve the above purpose. However, if it is to make a curved sensing channel directly on the substrate, it will be technically difficult. Therefore, the sensing channel of the conventional structure is formed by stacking a plurality of plates; in the prior art, the thickness of one plate body is at least 〇18 mm 15 or more, and since the structure of the substrate requires at least two plates to be stacked, the The stack height of the substrate will be at least 〇.36mm or more. Such a structure will increase the height of the substrate and cause a problem of increasing the overall volume of the MEMS module. In addition, the substrate is fabricated by laminating a plate body, which tends to cause peeling of the plate body, which will affect the structural strength of the substrate. 20 In summary, the conventional method for forming a channel for a MEMS module substrate has the above-mentioned deficiencies and needs to be improved. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method for forming a MEMS module substrate 4 331 595 to have a feature of reducing the overall height of the substrate. For the above purpose, the present invention provides a first space by forming an etChmg; the thickness of the substrate is formed by a fourth (four) and a layer of the substrate.

m is removed by M + #, having an n shape and located at the second space...), the λ is filled to fill the second space (4) to remove the ridge portion on the side, and the first 料 钱 layer is formed The two ends are connected to the outside channel. In this case, the method of the present invention is applied to the method of MEMS, and the method of "injection mokling" replaces the stacked substrate structure by means of processing a single body (stack bstrate structure) The technical spirit of the present invention is that the predetermined path is gradually formed by etching in the form of etching, and then the support layer is gradually formed by the injection molding method to achieve the purpose of the material forming channel; at the same time, it is lower than that of the user. The overall height of the substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to explain the structure, features and advantages of the present invention in detail, the following description of the preferred embodiments of the invention The cross-sectional view of the substrate before processing is mainly disclosed. The second drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main position 1331595 discloses the position of the first space. The third figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the first support layer. The fourth figure is a schematic view of the processing of the first preferred embodiment of the present invention, and the main portion 5 discloses the position of the second space and the sacrificial portion. Fig. 5 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 6 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the formation process of the passage. 10 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the structure of the passage. The eighth figure is an embodiment of the first preferred embodiment of the present invention applied to a microelectromechanical module. Figure 9 is a schematic view showing the processing of a second preferred embodiment of the present invention, and main section 15 discloses a cross-sectional view of the substrate before processing. Figure 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Figure 12 is a schematic view of the processing of the second preferred embodiment of the present invention, mainly showing the position of the first support layer. Fig. 13 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 14 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main portion 6 is to disclose the formation process of the channel. Fig. 15 is a view showing the structure of the channel of the second preferred embodiment of the present invention. Fig. 16 is a cross-sectional view showing the substrate before processing in accordance with the processing of the third preferred embodiment of the present invention. Intentional Intent Main Master Main Figure 17 is a schematic view of the processing of the third preferred embodiment of the present invention to reveal the position of the first space. Fig. 8 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 19 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the first supporting layer. Fig. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Figure 21 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the formation process of the channel. A main disclosure of the second embodiment of the present invention is not intended to be processed by a microcomputer. The twenty-third embodiment is an embodiment of the application of the electrical module according to the third preferred embodiment of the present invention. Referring to FIG. 1 to FIG. 7 , the method for forming a channel for a MEMS module substrate according to the first preferred embodiment of the present invention is as follows: A is also listed in each step: First, a substrate (10) is selected from one selected from the group consisting of glass fiber, grease, polyamido resin, FR4 resin, and BT resin; the substrate (1 〇) The thickness of the substrate (1〇) is 〇25mm; in this embodiment, the thickness of the substrate (10) is 〇.25mm (as shown in the first figure); The bottom of the substrate (etching) is subjected to etching to form a first space (12) (as shown in FIG. 5); b) filling the first space with a thermosetting resin by injection molding (12) forming a first support layer (20) (as shown in the third figure); wherein the first support layer (20) has a resist coefficient greater than the substrate (1〇); c) the substrate (10) The top is etched to form a plurality of second spaces (14) 10 and a sacrificial portion (16) having a channel shape and located in the second space (14) (eg, fourth D) forming a plurality of second support layers (22) by injection molding a thermosetting resin to fill each of the second spaces (14) (as shown in FIG. 5); in this embodiment, the second support The bottom of the layer (22) is integrally formed with the top of the first supporting layer (20) 15 to be integrated with each other, and the boundary between the two is less easily recognized; wherein the resist coefficient of the second supporting layer (22) is Greater than the substrate (10); e) progressively removing the sacrificial portion (16) by etching (as shown in FIG. 6); due to the first support layer P〇) and the resistivity of the second support layer (22) The system is larger than the substrate (10), so that during the etching of the sacrificial portion (16) of the substrate (10), the first support layer (20) and the second support layer (22) are not ensured. The first support layer (20) and the second support layer (22) are formed with a channel (18) communicating with the outside end (as shown in FIG. 7); the channel (18) Forming an inlet (181) and an outlet (182) on the surface of the substrate (10); in the present embodiment; the inlet (181) and the outlet (182) 8 1331595 (482) is located on the top side of the substrate (4), the inlet (481) and the outlet (the position of the magical point does not overlap each other in the horizontal direction. Through the above steps, the present embodiment provides for the formation of the microelectromechanical module substrate The method of the channel uses an etching and injection molding method to replace the stacked substrate structure by processing a single body; the technical spirit of the present invention is to gradually read the engraving method. Forming a predetermined path #, and then using the injection molding method to gradually form the first support layer (50) and the second support layer (10) to achieve the purpose of forming the channel (48); at the same time, compared to the conventional Reduce the overall orientation of the substrate. In addition, in this embodiment, the first space (42) and the second space (44) are first engraved on the substrate (4 〇), and the support layer (50) and the first portion are formed by injection molding. The two #层(52); the procedure of step e) of the present embodiment is exactly opposite to the step of the first-difficult embodiment and the % order of the step 〇. Thereby, this embodiment can also achieve the purpose of making a channel, and provide another embodiment. Please refer to the sixteenth to twenty-third figures, which are the third preferred embodiment of the present invention for forming a channel for a MEMS module substrate, comprising the following steps: ta) First, provide A substrate (60) is selected from the group consisting of a glass fiber, an epoxy resin, a polyalkylene oxide resin, a resin, and a material selected from the group consisting of Βτ resin; the thickness of the substrate _30 mm Hereinafter, the optimum thickness of the substrate (60) is 〇25_: in the present embodiment, the thickness of the =60) is 0.25 mm (as shown in the sixteenth), and the etching is performed on ^-β (etching) Forming a first space (62) (as shown in FIG. 1331595); b) etching the top of the substrate (60) to form a second space (64) and having a channel shape and located at the a sacrificial portion (66) of the second space (64) (as shown in FIG. 18); 5 c) filling the first space (62) with a thermosetting resin by injection molding to form a first a support layer (7〇) (as shown in FIG. 19); wherein 'the first support layer (70) has a resist coefficient greater than the substrate (6〇); d) Injection molding fills the second space (64) with a thermosetting resin to form a second support layer (72) (as shown in FIG. 20); wherein the second support layer (72) has an anti-silver coefficient Greater than the substrate (6〇); e) progressively removing the sacrificial portion (66) by etching (as shown in FIG. 11); due to the first support layer (7〇) and the second support layer (72) The resist coefficient is greater than the substrate (60)' so that the first support layer (7〇) and the second support can be ensured during the process of removing the sacrificial portion (66) of the substrate (6〇) The layer 15 (72) is not etched and remains; thus, the first support layer (7〇) and the second support layer (72) are formed with a channel (68) communicating with the outside at both ends (such as the twentieth The channel (68) is formed on the surface of the substrate (60) to form an inlet (681) and an outlet (682) and the channel (68) communicates with the opposite sides of the substrate (60); The inlet (681) is located on the bottom side of the substrate (4〇), the 2〇 outlet (682) is located on the top side of the substrate (40), and the inlet (681) and the outlet (682) are in a horizontal direction. Overlap each other. Through the above steps, the steps of the present embodiment are the same as those of the second preferred embodiment; the main purpose is to explain how the present invention forms channels of different types. Thereby, the embodiment can also achieve the purpose of making a channel, 12 1331595 and provide another embodiment. "Monthly, refer to the eleventh figure, which is a third embodiment of the present invention, wherein the substrate (60) having the channel (68) is applied to a microelectromechanical module (8〇) The electromechanical module (80) comprises the substrate (6〇), a microelectromechanical component (82) 5 and a metal cover (84). The microelectromechanical component (82) is disposed on the top side of the substrate (6〇). The outlet (682); the metal cover (84) is disposed on the top side of the substrate (60) and shields the microelectromechanical component (82), and the metal cover (84) forms a dense relationship with the substrate (6〇) a closing chamber (85)' to receive the MEMS element (82); thus, an external physical signal can pass through the inlet (681) of the substrate (60), and then pass to the MEMS via the channel (4) Element (82) for the purpose of receiving external signals. According to the embodiment provided above, the method for forming a channel for a MEMS module substrate of the present invention uses the etching and injection molding material to replace the stacked type by processing the single-domain. The substrate structure, the technical spirit of the present invention is that the predetermined path is gradually formed by etching, and then a plurality of support layers are gradually formed by injection molding to achieve the purpose of forming the pass, and at the same time, compared with the conventional one. The present invention can reduce the height of the substrate to less than G.36 mm, and has the feature of reducing the overall height of the substrate. The components of the present invention disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention. The alternatives or variations of other equivalent components are also covered by the scope of the patent application. 13 1331595 BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and mainly discloses a cross-sectional view of the substrate before processing. The second drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main 5 discloses the position of the first space. The third figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the first support layer. The fourth figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. 10 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 6 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the formation process of the passage. The seventh drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main structure 15 discloses the structure of the passage. The eighth figure is an embodiment of the first preferred embodiment of the present invention applied to a microelectromechanical module. Figure 9 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing a cross-sectional view of the substrate before processing. 20 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 12 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main 14 1331595 discloses the position of the first support layer. Fig. 13 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 14 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main body 5 discloses the formation process of the passage. Fig. 15 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the structure of the passage. Fig. 16 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing a cross-sectional view of the substrate before processing. 10 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 18 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 19 is a schematic view showing the processing of the third preferred embodiment of the present invention, and the main body 15 is to disclose the position of the first supporting layer. Fig. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Figure 21 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the formation process of the channel. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the structure of the channel. Figure 23 is a view showing an embodiment of a third embodiment of the present invention applied to a microcomputer module. 15 1331595

[Main component symbol description] Substrate (10) First space (12) Second space (14) Sacrificial part (16) Channel (18) Entrance (181) 5 Exit (182) First support layer (20) Second support Layer (22) MEMS Module (30) MEMS Component (32) Metal Cover (34) Housing (35) Perforation (3 6) Substrate (40) First Space (42) 10 Second Space (44) Sacrifice Part (46) Channel (48) Outlet (482) Entrance (481) First Support Layer (50) Second Support Layer (52) Substrate (60) First Space (62) 15 Second Space (64) Sacrifice ( 66) Channel (68) Entrance (681) Exit (682) First support layer (70) Second support layer (72) MEMS module (80) MEMS components (82) Metal cover (84) 20 chamber ( 85) 16

Claims (1)

1331595 Patent application scope, the method for forming a channel for a MEMS module substrate comprises: 15 a) etching a substrate bottom to form a first space, wherein the thickness of the substrate is 〇 .3〇mm or less; b) filling the first space by injection molding to form a first support layer; c) engraving the top of the substrate to form a first channel shape and located at the second a sacrificial portion of the space; d) forming a second support layer by injection molding to fill the second space, and e) removing the sacrificial portion by (iv), the first support layer and the second support > There is a passage connecting the two ends to the outside world. μ 2S, Γ 请 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 验 县 县 县 县 县 县 县 县A material made from a corpse/Tk. According to Shen, the number of substrate resin used in MEMS for the first item of the 11th item is = 3 bases: the first floor is made of thermoset (four) 4s, and the material of the lion is MEMS. The module substrate is a branch of the channel, and the towel is in the step d) and the anti-number system is larger than the substrate. ^ is a series of steps that are completed by the microelectromechanical wire (4), including the lower space and a 17 a) etching a substrate bottom to form a first space; wherein the thickness of the substrate is 〇.3〇mm or less; b) etching the top of the substrate to form a second space and a sacrificial portion having a channel shape and located in the second space; 八5) filling the injeetiGn molding Forming a first support layer in the first space; d) filling the second space by injection molding to form a second branch. e) removing the sacrificial portion with a remaining portion, the first supporting layer and the second supporting layer forming a channel connecting the two ends to the outside. The method for MEMS module substrate/channeling according to claim 5, wherein the substrate of step a) is selected from the group consisting of glass fiber and enamel tree 爿曰 'poly Asia A material selected from the group consisting of a 15% group consisting of a guanamine resin, an FR4 resin, and a BT resin. 7. The method for forming a channel for a MEMS module substrate according to claim 5, wherein the first support layer is a thermosetting resin and the resist coefficient is greater than the substrate. 8. The method for forming a channel for a MEMS module substrate according to claim 5, wherein the second support layer is a tamping resin and the resist coefficient is greater than the substrate. ..., 18
TW096126251A 2007-07-18 2007-07-18 TWI331595B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096126251A TWI331595B (en) 2007-07-18 2007-07-18

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW096126251A TWI331595B (en) 2007-07-18 2007-07-18
US11/935,707 US20090020501A1 (en) 2007-07-18 2007-11-06 Method of forming passage in substrate for mems module

Publications (2)

Publication Number Publication Date
TW200904740A TW200904740A (en) 2009-02-01
TWI331595B true TWI331595B (en) 2010-10-11

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US7684786B2 (en) * 2003-08-26 2010-03-23 Nokia Corporation Method and system for establishing a connection between network elements
TWI331596B (en) * 2007-07-18 2010-10-11 Lingsen Precision Ind Ltd
EP2381698A1 (en) * 2010-04-21 2011-10-26 Nxp B.V. Microphone
US8889451B2 (en) 2012-02-21 2014-11-18 Freescale Semiconductor, Inc. MEMS pressure transducer assembly and method of packaging same

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JP3984689B2 (en) * 1996-11-11 2007-10-03 キヤノン株式会社 Inkjet head manufacturing method
SG111092A1 (en) * 2002-11-15 2005-05-30 St Microelectronics Pte Ltd Semiconductor device package and method of manufacture
US7492019B2 (en) * 2003-03-07 2009-02-17 Ic Mechanics, Inc. Micromachined assembly with a multi-layer cap defining a cavity
US7482193B2 (en) * 2004-12-20 2009-01-27 Honeywell International Inc. Injection-molded package for MEMS inertial sensor
TWI331596B (en) * 2007-07-18 2010-10-11 Lingsen Precision Ind Ltd

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US20090020501A1 (en) 2009-01-22

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