TWI329785B - Resist composition and method for forming resist pattern - Google Patents

Resist composition and method for forming resist pattern Download PDF

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Publication number
TWI329785B
TWI329785B TW94115401A TW94115401A TWI329785B TW I329785 B TWI329785 B TW I329785B TW 94115401 A TW94115401 A TW 94115401A TW 94115401 A TW94115401 A TW 94115401A TW I329785 B TWI329785 B TW I329785B
Authority
TW
Taiwan
Prior art keywords
group
component
photoresist composition
alkyl group
structural unit
Prior art date
Application number
TW94115401A
Other languages
English (en)
Chinese (zh)
Other versions
TW200600968A (en
Inventor
Yusuke Nakagawa
Shinichi Hidesaka
Kazuhiko Nakayama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200600968A publication Critical patent/TW200600968A/zh
Application granted granted Critical
Publication of TWI329785B publication Critical patent/TWI329785B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW94115401A 2004-05-31 2005-05-12 Resist composition and method for forming resist pattern TWI329785B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004161880 2004-05-31
JP2004203115 2004-07-09
JP2004259065A JP2006047940A (ja) 2004-05-31 2004-09-06 レジスト組成物、レジストパターンの形成方法

Publications (2)

Publication Number Publication Date
TW200600968A TW200600968A (en) 2006-01-01
TWI329785B true TWI329785B (en) 2010-09-01

Family

ID=35451027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94115401A TWI329785B (en) 2004-05-31 2005-05-12 Resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006047940A (fr)
TW (1) TWI329785B (fr)
WO (1) WO2005116762A1 (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59309494D1 (de) * 1992-05-22 1999-05-12 Ciba Geigy Ag Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP3931482B2 (ja) * 1999-06-02 2007-06-13 住友化学株式会社 化学増幅ネガ型レジスト組成物
JP4365049B2 (ja) * 2000-10-20 2009-11-18 富士フイルム株式会社 サーマルフロー用化学増幅型ポジレジスト組成物を用いたパターン形成方法
JP3516653B2 (ja) * 2000-12-15 2004-04-05 シャープ株式会社 半導体装置の製造方法
JP4779079B2 (ja) * 2001-04-09 2011-09-21 丸一株式会社 排水トラップ
JP4057807B2 (ja) * 2001-12-03 2008-03-05 東京応化工業株式会社 微細レジストパターン形成方法
JP4120437B2 (ja) * 2002-03-29 2008-07-16 Ｊｓｒ株式会社 スルホニル構造を有する化合物、それを用いた感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物
JP2004103055A (ja) * 2002-09-05 2004-04-02 Sony Corp カートリッジ収納用ケース
JP4510759B2 (ja) * 2003-05-20 2010-07-28 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト組成物の製造方法及びレジストパターン形成方法
JP4313611B2 (ja) * 2003-05-22 2009-08-12 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP4173413B2 (ja) * 2003-08-28 2008-10-29 東京応化工業株式会社 リフトオフ用レジストパターンの形成方法
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物

Also Published As

Publication number Publication date
TW200600968A (en) 2006-01-01
WO2005116762A1 (fr) 2005-12-08
JP2006047940A (ja) 2006-02-16

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