TWI324361B - - Google Patents
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- Publication number
- TWI324361B TWI324361B TW092123978A TW92123978A TWI324361B TW I324361 B TWI324361 B TW I324361B TW 092123978 A TW092123978 A TW 092123978A TW 92123978 A TW92123978 A TW 92123978A TW I324361 B TWI324361 B TW I324361B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- substrate
- processed
- processing method
- electrostatic chuck
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 58
- 238000003672 processing method Methods 0.000 claims description 53
- 238000005530 etching Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 238000009832 plasma treatment Methods 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 89
- 239000007789 gas Substances 0.000 description 34
- 239000002245 particle Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002256096A JP4322484B2 (ja) | 2002-08-30 | 2002-08-30 | プラズマ処理方法及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200410332A TW200410332A (en) | 2004-06-16 |
| TWI324361B true TWI324361B (fr) | 2010-05-01 |
Family
ID=31972935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092123978A TW200410332A (en) | 2002-08-30 | 2003-08-29 | Method and device for plasma treatment |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP4322484B2 (fr) |
| KR (1) | KR100782621B1 (fr) |
| CN (1) | CN100414672C (fr) |
| AU (1) | AU2003261790A1 (fr) |
| TW (1) | TW200410332A (fr) |
| WO (1) | WO2004021427A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI506668B (zh) * | 2010-09-16 | 2015-11-01 | Tokyo Electron Ltd | Plasma processing device and plasma processing method |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205250B2 (en) * | 2003-03-18 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
| US7316785B2 (en) * | 2004-06-30 | 2008-01-08 | Lam Research Corporation | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
| JP4704087B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| CN100416758C (zh) * | 2005-12-09 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法 |
| CN101740340B (zh) * | 2008-11-25 | 2011-12-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及半导体加工设备 |
| JP2010199310A (ja) * | 2009-02-25 | 2010-09-09 | Sharp Corp | プラズマエッチング方法 |
| US20120154974A1 (en) * | 2010-12-16 | 2012-06-21 | Applied Materials, Inc. | High efficiency electrostatic chuck assembly for semiconductor wafer processing |
| WO2014049915A1 (fr) * | 2012-09-26 | 2014-04-03 | シャープ株式会社 | Dispositif de traitement de substrat, procédé de traitement de substrat et procédé de fabrication de dispositif à semiconducteur |
| US9837251B2 (en) | 2014-02-28 | 2017-12-05 | Ulvac, Inc. | Plasma etching method, plasma etching device, plasma processing method, and plasma processing device |
| JP6558901B2 (ja) | 2015-01-06 | 2019-08-14 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6595334B2 (ja) * | 2015-12-28 | 2019-10-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| KR102148833B1 (ko) * | 2016-02-26 | 2020-08-28 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | 주입형 포토레지스트 스트리핑 공정 |
| US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
| US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
| JP7482657B2 (ja) * | 2020-03-17 | 2024-05-14 | 東京エレクトロン株式会社 | クリーニング方法及び半導体装置の製造方法 |
| CN113154610A (zh) * | 2021-05-31 | 2021-07-23 | 北京十三和科技发展有限公司 | 一种具有温度调节功能的空气净化器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06318552A (ja) * | 1993-05-10 | 1994-11-15 | Nissin Electric Co Ltd | プラズマ処理方法及び装置 |
| JPH1027780A (ja) * | 1996-07-10 | 1998-01-27 | Nec Corp | プラズマ処理方法 |
| JP3907256B2 (ja) * | 1997-01-10 | 2007-04-18 | 芝浦メカトロニクス株式会社 | 真空処理装置の静電チャック装置 |
| KR100635975B1 (ko) * | 2000-02-14 | 2006-10-20 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재 |
-
2002
- 2002-08-30 JP JP2002256096A patent/JP4322484B2/ja not_active Expired - Fee Related
-
2003
- 2003-08-28 WO PCT/JP2003/010937 patent/WO2004021427A1/fr active Application Filing
- 2003-08-28 KR KR1020057003051A patent/KR100782621B1/ko active IP Right Grant
- 2003-08-28 CN CNB038206455A patent/CN100414672C/zh not_active Expired - Lifetime
- 2003-08-28 AU AU2003261790A patent/AU2003261790A1/en not_active Abandoned
- 2003-08-29 TW TW092123978A patent/TW200410332A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI506668B (zh) * | 2010-09-16 | 2015-11-01 | Tokyo Electron Ltd | Plasma processing device and plasma processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4322484B2 (ja) | 2009-09-02 |
| KR20050058464A (ko) | 2005-06-16 |
| KR100782621B1 (ko) | 2007-12-06 |
| CN1679148A (zh) | 2005-10-05 |
| WO2004021427A1 (fr) | 2004-03-11 |
| AU2003261790A1 (en) | 2004-03-19 |
| JP2004095909A (ja) | 2004-03-25 |
| TW200410332A (en) | 2004-06-16 |
| CN100414672C (zh) | 2008-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |