TWI303105B - Wafer level package for image sensor components and its fabricating method - Google Patents
Wafer level package for image sensor components and its fabricating method Download PDFInfo
- Publication number
- TWI303105B TWI303105B TW095100993A TW95100993A TWI303105B TW I303105 B TWI303105 B TW I303105B TW 095100993 A TW095100993 A TW 095100993A TW 95100993 A TW95100993 A TW 95100993A TW I303105 B TWI303105 B TW I303105B
- Authority
- TW
- Taiwan
- Prior art keywords
- image sensing
- wafer level
- package structure
- holes
- active surface
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 6
- 239000010410 layer Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
1303105 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種影像感測元件之封裝構造，特別 係有關於一種影像感測元件之晶圓級封裝構造。 【先前技術】 為了使電子產品符合多功能性及外觀造型輕巧之消 費趨勢’半導體封裝·逐漸趨肖WLCSP (晶圓級晶片尺寸 封裝）之技術發展，晶圓級晶片尺寸封裝之技術除了封裝 完成之成品體積較小之外，對於產能也大幅增加。然而習 知影像感測元件之晶圓級封襄構造係以銲球回銲接人至 至一基板，並且必要時需在職板與封裝構造之間點i底 部填充膠，以保護銲球不受應力而斷裂。 請參閱第1圖，一種習知影像感測元件之晶圓級封裝 構造100,其係包含有一影像感測晶# 11〇、__第一膠層 120及H層13G，該影像感測日日日>5 11G係具有I: 動面111、-背面112及複數個側面113，該主動面⑴ 係形成有一感測區114及複數個銲墊i i 5。一 乂 丨木獲層1 4 0 係形成於該主動面ln係且顯露出該些銲墊ιΐ5，一第一 線路層15G係形成於該保護層14()上並電性連接至該些鲜 塾⑴，該第-膠層120係覆蓋該第一線路層15〇與;保 護層"0’該第一膠層120之材質係為透明材f，其係以 壓模或印刷等方法形成，該第：膠層13()係形成於該影像 感測晶片m之該背面112’在該第二膠層13〇上係形成 有複數個連接塾160’ 一第二線路層17〇由該影像感測晶 6 1303105 片.110之該些側面U3延伸至該第二膠層丨3〇,且該第二 線路層170係電性連接該第一線路層15〇與該些連接墊 160，#由該第一線路層150與該第二線路層17〇電性連 接該些銲墊115與該些連接墊160，並且在該該第二線路 層170上係形成有一防銲層18〇,以保護該第二線路層 170，該些連接墊143上係設置有複數個銲球19〇。然而， 當該習知影像感測元件之晶圓級封裝構造丨〇〇之該些銲球 190回銲接合至一基板（圖未繪出）後，在該基板與該些 連接墊143間係需點塗底部填充膠，以保護該些銲球1 。 【發明内容】 本發明之主要目的係在於提供一種影像感測元件之 晶圓級封裝構造及其製造方法，一影像感測晶片之複數個 貫通孔係對準並導通至該影像感測晶片之複數個銲墊，以 利複數個形成於該些貫通孔中之金屬柱導接至該些銲 墊，該影像感測晶片係以該些金屬柱接合至一印刷電路 板，以取代習知影像感測元件之黏晶及打線製程，亦不需 在影像感測晶片之表面以煩雜製程形成重分配線路，並且 在該影像感測晶片與該印刷電路板之間係不需點塗底部 填充膠來保護該些金屬柱。 依據本發明’一種影像感測元件之晶圓級封裝構造主 要包含一影像感測晶片以及複數個金屬柱。該影像感測晶 片係具有一主動面、一背面以及複數個貫通孔，該主動面 係包含有一光感測區及複數個銲墊，該些貫通孔係對準並 導通至該些銲墊，該些金屬柱係形成於該些貫通孔中，該
Claims (1)
1303105
2、 如申請專利範圍第 案號95100993 年Γ月fi：日 修正 申請專利範圍： 一種影像感測元件之晶圓級封裝構造之製造方法，包 含： 提供至少一影像感测晶片，該影像感測晶片係具有一 主動面、一背面以及複數個貫通孔，該主動面係包含 有一光感測區並形成有複數個銲墊，該些貫通孔係對 準並導通至該些銲墊； 形成一光阻層於該影像感測晶片之該背面； 曝光顯影該光阻層，以形成複數個孔洞，該些孔洞係 對準並連接至該些貫通孔；以及 形成複數個金屬柱於該些貫通孔及該些孔洞中，該些 金屬柱之一第一端部係導接至該些銲墊，該些金屬柱 之一第二端部係突出於該影像感測晶片之該背面。 如申请專利範圍第1項所述之影像感測ϋ件之晶圓級 封羞構造之製造方法，其另包含有：設置一破璃片於 該主動面上。 叫專利耗圍第2項所述之影像感測元件之晶口 :裝構造之製造方法，其另包含有：形成一環氧* :°亥主動面上’以將該坡璃片固設於該主動面上 二申請專利範圍第3項所述之影像感測元件之晶[ 診裝構造之製造方法’其另包含有：形成-保護) 動面及5亥壤氧樹腸之間，以保護該主動面之1 感 >則區。 2項所述之影像感測元件之晶圓級 13 U03105 索號95100993 年月日 修正 封裝構造之製造方法，其另包含有··形成一保護層於 該主動面上，|該保護層係形成於該玻璃片與該主動 面之間。 6、 如申請專利範園第5項所述之影像感測元件之晶圓級 封裝構造之製造方法，其另包含有··形成一環氧樹脂 於該保護層上，以將該玻璃片固設於該主動面上。 7、 如申請專利範園第1項所述之影像感測元件之晶圓級 封裝構造之製造方法，其中該些金屬柱係利用電鍍方 式形成。 ^ 如申請專利範圍第1 封裝構造之製造方法 該些貫通孔之孔壁。 項所述之影像感測元件之晶圓級 ，另包含有：形成一電絕緣層於 9 如申請專利範圍第 封裝構造之製造方 微米。 1項所述之影像感測元件之晶圓級 法，其中該光阻層厚度係介於5〜10 10 如申請專利範圍篦！ 封裝構造之製二所述之影像感測元件之晶圓級 —曰n hi 其中該影像感測晶片係形成於 曰日圓上在形成該些 11、 如申請專利範圍第二§ 旦進行切割該晶圓。 封裝構造之製Γ方、項所述之影像感測元件之晶圓級 材質。 丨法，*中該些金屬桎係為單一金属 14 案號95100993 年"月修正
1303105 十一、圖式： 第1圖 200
• 第2圖 215 250 240 230 214 211 221
1303105 案號95100993 年月日 修正 240 214 211 215 215 211 214 240
第4A圖 240 250 215 215 230 250 240
第 4B圖 240 250 211 215 230 215 211 250 240
第4C圖 -2141303105 案號 95100993 年 月 曰 修正
240 250 211 215 215 211 250 240
240 250 211 215 216 215 211 250 240
-214 -210 240 250 211 215 216 215 211 250 240
-214 -210 第4F匿 1303105 案號95100993 年月日 修正
250 211 221 215 216 215 221 211 240
-214 -210
410
〜214 〜210 第 4H圖
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095100993A TWI303105B (en) | 2006-01-11 | 2006-01-11 | Wafer level package for image sensor components and its fabricating method |
| US11/647,408 US20070187711A1 (en) | 2006-01-11 | 2006-12-29 | Wafer level package for image sensor components and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095100993A TWI303105B (en) | 2006-01-11 | 2006-01-11 | Wafer level package for image sensor components and its fabricating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200727500A TW200727500A (en) | 2007-07-16 |
| TWI303105B true TWI303105B (en) | 2008-11-11 |
Family
ID=38367473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095100993A TWI303105B (en) | 2006-01-11 | 2006-01-11 | Wafer level package for image sensor components and its fabricating method |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070187711A1 (zh) |
| TW (1) | TWI303105B (zh) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9117714B2 (en) | 2007-10-19 | 2015-08-25 | Visera Technologies Company Limited | Wafer level package and mask for fabricating the same |
| US20090206431A1 (en) * | 2008-02-20 | 2009-08-20 | Micron Technology, Inc. | Imager wafer level module and method of fabrication and use |
| US8072079B2 (en) | 2008-03-27 | 2011-12-06 | Stats Chippac, Ltd. | Through hole vias at saw streets including protrusions or recesses for interconnection |
| DE102008025756B4 (de) * | 2008-05-29 | 2023-02-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiteranordnung |
| US8546189B2 (en) * | 2008-09-22 | 2013-10-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming a wafer level package with top and bottom solder bump interconnection |
| US7888181B2 (en) * | 2008-09-22 | 2011-02-15 | Stats Chippac, Ltd. | Method of forming a wafer level package with RDL interconnection over encapsulant between bump and semiconductor die |
| US8415203B2 (en) * | 2008-09-29 | 2013-04-09 | Freescale Semiconductor, Inc. | Method of forming a semiconductor package including two devices |
| US20100320591A1 (en) * | 2009-06-19 | 2010-12-23 | Zigmund Ramirez Camacho | Integrated circuit packaging system with contact pads and method of manufacture thereof |
| TWI392069B (zh) * | 2009-11-24 | 2013-04-01 | Advanced Semiconductor Eng | 封裝結構及其封裝製程 |
| TWI446420B (zh) | 2010-08-27 | 2014-07-21 | Advanced Semiconductor Eng | 用於半導體製程之載體分離方法 |
| TWI445152B (zh) | 2010-08-30 | 2014-07-11 | Advanced Semiconductor Eng | 半導體結構及其製作方法 |
| US9007273B2 (en) | 2010-09-09 | 2015-04-14 | Advances Semiconductor Engineering, Inc. | Semiconductor package integrated with conformal shield and antenna |
| TWI434387B (zh) | 2010-10-11 | 2014-04-11 | Advanced Semiconductor Eng | 具有穿導孔之半導體裝置及具有穿導孔之半導體裝置之封裝結構及其製造方法 |
| TWI527174B (zh) | 2010-11-19 | 2016-03-21 | 日月光半導體製造股份有限公司 | 具有半導體元件之封裝結構 |
| TWI445155B (zh) | 2011-01-06 | 2014-07-11 | Advanced Semiconductor Eng | 堆疊式封裝結構及其製造方法 |
| US8853819B2 (en) | 2011-01-07 | 2014-10-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor structure with passive element network and manufacturing method thereof |
| US8541883B2 (en) | 2011-11-29 | 2013-09-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device having shielded conductive vias |
| US8975157B2 (en) | 2012-02-08 | 2015-03-10 | Advanced Semiconductor Engineering, Inc. | Carrier bonding and detaching processes for a semiconductor wafer |
| US8963316B2 (en) | 2012-02-15 | 2015-02-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and method for manufacturing the same |
| US8786060B2 (en) | 2012-05-04 | 2014-07-22 | Advanced Semiconductor Engineering, Inc. | Semiconductor package integrated with conformal shield and antenna |
| US9153542B2 (en) | 2012-08-01 | 2015-10-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor package having an antenna and manufacturing method thereof |
| US8937387B2 (en) | 2012-11-07 | 2015-01-20 | Advanced Semiconductor Engineering, Inc. | Semiconductor device with conductive vias |
| US8952542B2 (en) | 2012-11-14 | 2015-02-10 | Advanced Semiconductor Engineering, Inc. | Method for dicing a semiconductor wafer having through silicon vias and resultant structures |
| US9406552B2 (en) | 2012-12-20 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device having conductive via and manufacturing process |
| US8841751B2 (en) | 2013-01-23 | 2014-09-23 | Advanced Semiconductor Engineering, Inc. | Through silicon vias for semiconductor devices and manufacturing method thereof |
| US9978688B2 (en) | 2013-02-28 | 2018-05-22 | Advanced Semiconductor Engineering, Inc. | Semiconductor package having a waveguide antenna and manufacturing method thereof |
| US9089268B2 (en) | 2013-03-13 | 2015-07-28 | Advanced Semiconductor Engineering, Inc. | Neural sensing device and method for making the same |
| US9173583B2 (en) | 2013-03-15 | 2015-11-03 | Advanced Semiconductor Engineering, Inc. | Neural sensing device and method for making the same |
| US8987734B2 (en) | 2013-03-15 | 2015-03-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor wafer, semiconductor process and semiconductor package |
| TWI595810B (zh) * | 2015-05-22 | 2017-08-11 | 欣興電子股份有限公司 | 封裝結構及其製作方法 |
| CN109461746A (zh) * | 2018-09-30 | 2019-03-12 | 华为技术有限公司 | 一种摄像头组件、组装方法以及终端 |
| CN112687618A (zh) * | 2020-12-23 | 2021-04-20 | 绍兴同芯成集成电路有限公司 | 一种晶圆的封装方法及晶圆封装组件 |
| CN117238781B (zh) * | 2023-11-16 | 2024-02-23 | 江苏芯德半导体科技有限公司 | 一种晶圆级超薄四边无引脚芯片封装方法及芯片封装结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW550770B (en) * | 2002-06-20 | 2003-09-01 | Advanced Semiconductor Eng | Optical integrated circuit element package and process for making the same |
| TW571409B (en) * | 2002-12-03 | 2004-01-11 | Advanced Semiconductor Eng | Optical device and packaging method thereof |
| TWI231606B (en) * | 2003-11-10 | 2005-04-21 | Shih-Hsien Tseng | Image pickup device and a manufacturing method thereof |
| KR100687069B1 (ko) * | 2005-01-07 | 2007-02-27 | 삼성전자주식회사 | 보호판이 부착된 이미지 센서 칩과 그의 제조 방법 |
| US7772116B2 (en) * | 2005-09-01 | 2010-08-10 | Micron Technology, Inc. | Methods of forming blind wafer interconnects |
-
2006
- 2006-01-11 TW TW095100993A patent/TWI303105B/zh active
- 2006-12-29 US US11/647,408 patent/US20070187711A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW200727500A (en) | 2007-07-16 |
| US20070187711A1 (en) | 2007-08-16 |
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