1299286 九、發明說明 【發明所屬之技術領域】 本發明是關於一種使用較長型的塗佈噴嘴將液體塗佈 被處理基板上來形成塗佈膜的塗佈方法及塗佈裝置。 【先前技術】 以往，在LCD或半導體元件等製程的微影成像工程 中，作爲用以將光阻液塗佈在被處理基板（玻璃基板，半 導體晶圓等）上所使用的光阻噴嘴的一形式，眾如具有如 揭示於專利文獻1的縫隙狀的吐出口的較長型光阻噴嘴。 如第1 3圖所示地，在使用此種較長型噴嘴的光阻塗佈 裝置，是在水平地載置於載置台或保持板（未圖示）上的基 板G與較長型光阻噴嘴200的下端面吐出口之間設定數百 //m以下的微小間隙，在基板G的上方一面朝掃描方向（一 般爲與噴嘴長度方向正交的水平方向）移動光阻噴嘴200， 一面將光阻液吐出在基板G上。這時候，被吐出在基板G 上的光阻液藉由潮濕現象附著於光阻噴嘴200的背面下部 2〇〇a而朝高度方向擴展（隆起），形成有朝噴嘴長度方向延 伸的凸面狀彎月面。該彎月面的形狀是藉由光阻液的表面 張力及黏度或噴嘴吐部乃至背面部的形狀等所決定，在穩 定狀態下彎月面的頂點位置穩定在某一定高度線亦即穩定 在濕潤線WL。只要該濕潤線WL在一定高度位置上呈水 平，則在基板G上以一定膜厚形成有光阻液的塗佈膜。 專利文獻1:日本特開平8-138991 1299286 【發明內容】 如上述地，在使用較長型光阻噴嘴200的光阻塗佈裝 置中，在塗佈處理中以潮濕現象附著於光阻噴嘴200的背 面下部的光阻液的頂點線或濕潤線WL與基板上的光阻塗 佈膜的輪廓有關，只要濕潤線WL以一定高度位置保持水 平一直線，則在基板上以一定膜厚形成光阻塗佈膜。然而 ，在習知的此種光阻塗佈裝置中，有很難經常穩定地得到 水平一直線的濕潤線WL的缺點問題，或是藉由光阻液的 種類有容易形成波狀彎月面者，如第1 3圖所示地，有產生 在對應於此種波狀彎月面的波頭202的基板G上的位置朝 掃描方向延伸的線條狀塗佈斑駁2 0 4的缺點問題。 本發明是鑑於上述先前技術的缺點問題所創作者，具 目的是在於提供一種在較長型塗佈噴嘴經常穩定地得到良 好的濕潤線般地，在被處理基板上形成膜厚一定且無塗佈 斑駁的塗佈膜的塗佈方法及塗佈裝置。 爲了達成上述目的，本發明的塗佈方法，是屬於在大 約水平的被處理基板與設於較長型的塗佈噴嘴的下端面的 吐出口之間設定所期望的微小間隙，在塗佈處理中以從上 述吐出口被吐出在上述基板上的塗佈液使得上述塗佈噴嘴 的背面下端部弄濕狀態下，朝與噴嘴長度方向大的正交的 水平方向相對地移動上述塗佈噴嘴，而在上述基板上塗佈 上述塗佈液的塗佈方法，其特徵爲具有： 在塗佈處理之前將塗佈液或稀釋該塗佈液的稀釋塗佈 液朝噴嘴長度方向塗在上述塗佈噴嘴的背面下端部的濕潤 -5- 1299286 線底層處理工程。 本發明的塗佈裝置，其特徵爲具有： 在下端面具有吐出口的較長型塗佈噴嘴； 在上述塗佈噴嘴供給塗佈液所用的第一塗佈液供給部 9 大約水平地支持處理基板所用的基板支持部； 在塗佈處理中對於上述基板支持部的上述基板隔著所 期望的微小間隙支持上述塗佈噴嘴所用的噴嘴支持部； 在塗佈處理中以從上述塗佈噴嘴的吐出口被吐出在上 述基板上的塗佈液使得上述塗佈噴嘴的背面下端部弄濕狀 態下，朝與噴嘴長度方向大約正交的水平方向相對地移動 上述塗佈噴嘴般地在上述基板支持部與上述噴嘴支持部之 間進行相對性水平移動所用的掃描部；以及 在塗佈處理之前將塗佈液或稀釋該塗佈液的稀釋塗佈 液朝噴嘴長度方向塗在上述塗佈噴嘴的背面下端部的濕潤 線底層處理部。 在本發明中，在塗佈處理之前於濕潤線底層處理部， 藉由將塗佈液或稀釋該塗佈液的稀釋塗佈液朝噴嘴長度 方向塗在塗佈噴嘴的背面下端部，在塗佈處理時可圓滑地 進行由塗佈噴嘴所吐出的塗佈液潮濕現象所致的塗佈噴嘴 背面下端部的擴展之同時，將液面頂點位置或濕潤模仿塗 上方向而使之穩定化。 依照本發明的較佳一形態，在濕潤線底層處理工程中 ，對於塗佈噴嘴的背面下端部，一面推壓塗佈液或稀釋塗 -6 - 1299286 佈液所滲出的塗佈墊，一面朝噴嘴長度方向相對地滑動。 這時候，塗佈墊是藉由一面將塗佈液或稀釋塗佈液滲出塗 上塗佈噴嘴的背面下端部，一面朝噴嘴長度方向滑動，可 良好且有效果地形成包含一直線地模仿濕潤線所用的摩擦 線的塗佈液上領域。較理想是塗佈墊具有海線狀物質或多 孔質物質所構成的墊構件，可作成將該墊構件接觸於塗佈 噴嘴的背面下端部並作成滑動。又，爲了得到良好的直線 性摩擦線，從塗佈噴嘴的背面下端部的一端一直到另一端 一 口氣地滑動塗佈墊較理想。 依照本發明的較佳的一形態，塗佈墊於與塗佈噴嘴的 背面下端部接觸的墊主面下端部具有與噴嘴長度方向平行 地延伸的凹部，而在塗佈噴嘴的背面下端部作成形成有朝 噴嘴長度方向延伸的塗佈液或是稀釋塗佈液的儲液部。在 塗佈噴嘴的背面下端部設置此種塗佈液或稀釋塗佈液的儲 液部的狀態開始下一塗佈處理’則由塗佈噴嘴的吐出口吐 出於基板上的塗佈液藉由弄濕現象附著於噴嘴部背面的下 端部而可縮短朝高度方向擴展的時間’並可加快開始噴嘴 掃描。 依照本發明的適當的一形態，在濕潤線底層處理工程 中，對於塗佈噴嘴的背面下端部’供給塗佈液或稀釋塗佈 液之狀態下一面推壓摩擦墊’ 一面朝噴嘴長度方向相對地 滑動。這時候，摩擦墊是首先藉由將附著於塗佈噴嘴的背 面下端部的塗佈液或稀釋塗佈液一面朝噴嘴長度方向延伸 一面滑動，可良好且有效果地形成包含一直線地模仿濕潤 -7- 1299286 線所用的摩擦線的塗佈液塗上領域。較理想是一摩擦墊具 有海綿狀物質或多孔質物質所構成的墊構件，可作成將該 墊構件接觸於塗佈噴嘴的背面下端部並作成滑動。又，爲 了得到良好的直線性摩擦線，從塗佈噴嘴的背面下端部的 一端一直到另一端一 口氣地滑動摩擦墊較理想。 在本發明中，在濕潤線底層處理工程塗於塗佈噴嘴的 背面下端部的塗佈液是與塗佈於基板上的塗佈液相同者最 理想，若將基本成分作爲相同，則在成分比或濃度等有些 不同也可以。 依照本發明的塗佈方法及塗佈裝置，藉由如上述的構 成與作用，在較長型塗佈噴嘴經常穩定地可得到良好的濕 潤線，由此，在被處理在基板上形成膜厚一定且無塗佈斑 駁的塗佈膜。 【實施方式】 以下，參照第1圖至第1 2圖說明本發明的適當實施形 態。 第1圖，係適用在本發明的塗佈方法及塗佈裝置之一 構成例的塗佈顯像處理系統。該塗佈顯像處理系統1 0是設 置於潔淨室內，例如將LCD基板作爲被處理基板，在 LCD製程中進行微影成像工程中的洗淨，光阻塗佈，預烘 ，顯像及主烘等一連串處理者。曝光處理是使用相鄰接於 該處理系統所設置的外部曝光裝置1 2。 該塗佈顯像處理系統1 〇是於中心部配置橫長的處理台 -8 - 1299286 (P/S)16，又在其長度方向（X方向）兩端部配設晶盒站 (C/S)14與介面站（I/F)18。 晶盒站（C/S) 14是系統10的晶盒搬入出通路，具備： 多段地重疊方形玻璃基板G般地將可數容複數枚的晶盒C 例如朝Y方向的水平方向排列四個並可載置的晶盒台20 ，及對於該台20上的晶盒C進行基板G的出入的搬運機 構22。搬運機構22是具有可保持基板G的例如搬運臂22a 的手段，在X，Y，Z，0的四軸可動作，成爲可進行相 鄰接的處理站（P/S) 16側與基板G的交線。 處理站（P/S)16是在系統長度方向（X方向）延伸的平行 相反方向的一對線A，B依處理程或工程順序配置各處理 部。更具體地，在從晶盒站（C/S)14側朝介面站（I/F)18側 的上游部處理線A，橫一列地配置洗淨處理部24，及第一 熱處理部26，及塗佈處理部28，及第二熱處理部30。另一 方面，在從介面站（I/F) 18側朝下游部的處理線B，橫一列 地配置第二熱處理部3 0，及顯像處理部3 2，及脫色處理部 3 4，及第三熱處理部3 6。該線形態中，第二熱處理部3 0是 位於上游側的處理線A的最後位置，同時位於下游側的 處理線B的前端位置，橫跨於兩線A與B間。 在兩處理線A，B設有補助搬運空間3 8成爲可將基板 G以一枚單位可水平地載置的梭子40藉由未圖示的驅動機 構在線方向（X方向）可朝雙方向移動。 在上游部的處理線A中洗淨處理部24是包含刷洗洗 淨單元（SCR)42，而在與該刷洗洗淨單元（SCR)42內的晶盒 1299286 站（C/S)10相鄰接的場所配置激元UV照射單元（e-UV)41。 刷洗洗淨單元（SCR)42內的洗淨部，是成爲將基板G利用 滾子搬運或皮帶搬運以水平姿勢一面朝A方向搬運一面 在基板G的上面（被處理面）施以刷洗淨或吹風洗淨。 鄰接於洗淨處理部2 4下游側的第一熱處理部2 6，是沿 著處理線A而在中心部設置縱型搬運機構4 6。在其前後 兩側設置將複數單張式烤爐單元或基板交接用的通路單元 一起多段地層積配置所成的多段單元部或烤爐塔（TB)44， 88 ° 例如第2圖所示地，在上游側的烤爐塔（TB)44，由下 依順序地重疊有基板搬入用的通路單元（P AS SiJ50，脫水 烘用的加熱單元（DHP)52，54及附著單元（AD)56。在此， 通路單元（PASSL)50是提供將來自刷洗洗淨單元（CSR)42的 洗淨處理的經處理的基板G搬入第一熱處理部26內所用 的空間。在下游側的烤爐塔（TB)48，從下依順序地重疊基 板搬出用的通路單元（P AS SR)60，基板溫度調整用的冷卻 單元（COL)62，64及附著單元（AD)66。在此，通路單元 (P AS SR) 60是提供將在第一熱處理部26經施以所需熱處理 的基板G搬出至下游側的塗佈處理部28所用的空間。 在第2圖中，搬運機構46是具有：沿著朝垂直方向延 伸的導軌68可昇降移動的昇降搬運體70’及在該昇降搬運 體70上朝0方向可旋轉或回旋的回旋搬運體72，及在該回 旋搬運體72上一面支持基板G —面朝前後方向可進退或 伸縮的搬運臂或鑷子74。昇降驅動昇降搬運體70所用的驅 -10- 1299286 動部76設於垂直導軌68的基端側；回旋驅動回旋搬運體72 所用的驅動部78安裝於昇降搬運體70 ;而進退搬運臂74所 用的驅動部80安裝於旋轉搬運體72。各驅動部76，78，80 是可使用如電動機等所構成。 如上述地所構成的搬運機構46，是高速地昇降或回旋 運動而可存取在兩相鄰的烘爐塔（TB)44，48中的任意單元 ，成爲與補助搬運空間38側的梭子40—起可交接基板G。 如第1圖所示地，相鄰接於第一熱處理部26的下游側 的塗佈處理部28是沿著處理線A —列地配置光阻塗佈單 元（CT)8 2與減壓乾燥單元（VD)84。塗佈處理部28內的構成 是如後詳細說明。 鄰接於塗佈處理部28下游側的第二熱處理部30，是具 有與上述第一熱處理部26同樣的構成；在兩處理線A、B 間設置縱型搬運機構90 ;在處理線A側（最後端）設置其中 一方的烘爐塔（TB)88 ;在處理線B側（前頭）設置另一方的 烘爐塔（TB)92。 省略圖示，惟例如在處理線A側的烘爐塔（TB)88，於 最下段配置有基板搬入用的通路單元（PASS L)，而在其上 面可重疊如三段預烘用的加熱單元（PREBAKE)。又，在處 理線B側的烘爐塔（TB)9 2，於最下段配置有基板搬出用的 通路單元（PASS R)，而在其上面重疊如三段基板溫度調整 用的冷卻單元（COL)，又在其上面可重疊如兩段預烘用的 加熱單元（PREBAKE)。 第二熱處理部30的搬運機構90是經由兩烘爐塔（TB) 8 8 -11 - 1299286 ’ 92的各該通路單元（PASSl)，（pAsSR)不僅與塗佈處理部 28及顯像處理部32以一枚單位可交接基板G，而且也與補 助搬運空間38內的梭子40或下述的介面站（I/F)18以一枚單 位可交接基板。 在下游部的處理線B中，顯像處理部3 2是包含一面以 水平姿勢搬運基板一面進行一連串的顯像處理工程的所謂 平流方式的顯像單元（DEV)94。 在顯像處理部32的下游側隔著脫色處理部34配置有第 三熱處理部36。脫色處理部34是具備在基板G的被處理 面照射i線（波長3 65nm)而進行脫色處理的i線UV照射單 元（i-UV)96。 第三熱處理部36是具有上述第一熱處理部26或第二熱 處理部3 0同樣的構成；沿著處理線B設置縱型搬運機構 1〇〇與在其前後兩側設置一對烘爐塔（TB)98，102。 省略圖示，例如在上游側的烘爐塔（TB)98，於最下段 設有基板搬入用的通路單元（P AS SL)，而在其上面的重疊 如三段的後烘用的加熱單元（PREBAKE)。又，在下游側的 烘爐塔（TB)102，於最下段設有後烘單元（POBAKE)，在其 上面重疊一段基板搬出及冷卻用的通路洗淨單元（P AS SR · COL)，而在其上面重疊兩段後烘用的加熱單元（POBAKE) 〇 第三熱處理部36的搬運機構100是經由兩多段單元部 (TB)98，102的通路單元（PASSL)及通路單元（PASSR · COL)不僅分別與i線UV照射單元（i-UV)96及晶盒站 -12- 1299286 (C/S)14以一枚單位可交接G，而與補助搬運空間38內的 · 梭子40也可以以一枚單位交接基板G。 介面站（I/F) 18是具有進行相鄰接的曝光裝置12與基板 G的交接所用的搬運裝置104，在其周圍配置緩衝站 ~ (BUF)106，增設洗淨站（EXT · COL)108及周邊裝置110。 在緩衝站（BUF)106設有定置型緩衝晶盒（未圖示）。增設洗 _ 淨站（EXT· COL)108是具備冷卻功能的基板交接用台，被 使用在與處理站（P/S)16側交換基板G。周邊裝置1 1〇是上 鲁 下地重疊字幕拍錄裝置（TITLER)與周邊曝光裝置的構成就 可以。搬運裝置104是具有可保持基板G的手段如搬運臂 104a，成爲可進行相鄰接的曝光裝置12或各單元（BUF)106 ，（EXT· COL)108，（TITLER/EE)1 10與基板的交接。 在第3圖表示該塗佈顯像處理系統的處理順序。首先 ，在晶盒站（C/S)14中，搬運機構22從工作台20上的任一 晶盒C中取出一基板G，並搬入至處理站（P/S)16的洗淨 處理部24的激元UV照射單元（i-UV)41(步驟S1)。 鲁 基板G是在激元UV照射單元（i-UV)41內施以紫外線 照射所致的乾式洗淨（步驟S2)。在該紫外線洗淨主要除去 _ 基板表面的有機物。完成紫外線洗淨之後，基板G是藉 由晶盒站（C/S) 14的搬運機構22移動至洗淨處理部24的刷 洗洗淨單元（SCR)42。 在刷洗洗淨單元（SCR)42，如上述地將基板G藉由滾 子搬送或皮帶搬運一面以水平姿勢朝處理線A方向平流 一面在基板G上面（被處理面）利用施以刷洗淨或吹風洗淨 -13- 1299286 ，從基板表面除去粒子狀污垢（步驟S3)。又，洗淨後也平 流基板G —面運一面施以沖洗處理，最後使用氣刀等未 乾燥基板G。 在刷洗洗淨單元（SCR)42內經洗淨處理的基板G，是 平流地被搬入在第一熱處理部26的上游側烘爐塔（TB)44內 的通路單元（PASSL)50。 在第一熱處理部26中，基板G是藉由搬運機構46以 所定順序依次被移送至所定烘爐單元。例如基板G是最 初從通路單元（PASS L) 50被移至加熱單元（DHP) 52，53的一 單元，在該處受到脫水處理（步驟S 4)。之後，基板G是 被移至冷卻單元（COL) 62，64的一單元，在該處被冷卻至 一定的基板溫度（步驟S5)。然後，基板G是被移至附著 單元（AD)56。在該處受到疏水化處理（步驟 S6)。在完成 疏水化處理之後，基板G是以冷卻單元（COL)62，64的一 單元被冷卻至一定基板溫度（步驟S 7)。最後，基板G是 被移至下游側烘爐塔（TB)48內的通路單元（PASS R) 60。 如此地，在第一熱處理部26內，基板G成爲經由搬 運機構46可任意地往來於上游側的多段烘爐塔（TB)44與下 游側的烘爐塔（TB)48之間。又，第2圖及第三熱處理部30 ，3 6也可進行同樣的基板搬運動作。 在第一熱處理部26受到如上述的一連串熱或或熱系統 的處理的基板G，是從下游側烘爐塔（TB)48內的通路單元 (PASSR)60移至光阻塗佈單元（CT)82。 在光阻塗佈單元（CT) 82中，基板G是如下述地藉由使 -14- 1299286 用縫隙型塗佈噴嘴的無自旋法將光阻液塗佈至基板上面（ 被處理面）。然後，基板G是在下游側相鄰的減壓乾燥單 元（VD)84受到減壓所致的乾燥處理（步驟S8)。 受到如上述的光阻塗佈處理的基板G，是從減壓乾燥 單元（VD)84搬進相鄰的第二熱處理部30的上游側烘爐塔 (TB)88內的通路單元（PASSL)。 第二熱處理部30內，基板G是藉由搬運機構90以所 定順序依順序被移送所定單元。例如基板G是最初從通 路單元（PASSL)被移至加熱單元（PREBAKE)的一單元，在 此受到預烘的加熱處理（步驟S9)。之後，基板G是被移 至冷卻單元（COL)的一單元，在此冷卻至一定基板溫度（步 驟S10)。然後基板G是經由下游側烘爐塔（TB)92側的通 路（PASSR)，或是未經由而交接至介面站（I/F)18側的增設 洗淨站（EXT · COL)108。 受到如上述的光阻塗佈處理的基板G，是從減壓乾燥 單元（VD)84被搬進相鄰的第二熱處理部30的上游側烘爐塔 (TB)88內的通路單元（PASSL)。 在第二熱處理部30內，基板G是藉由搬運機構90以 所定順序依次被移送至所定單元。例如基板G是最初從 通路單元（PASSL)被移至加熱單元（PREBAKE)的一單元， 在該處受到預烘的加熱處理（步驟S 9)。之後，基板G是 被移至冷卻單元（COL)的一單元，在該處被冷卻至一定的 基板溫度（步驟S 1 0)。然後，基板G是經由下游側烘爐塔 (TB)92側的通路單元（PASSR)，或未經由而被交接至介面 -15- 1299286 站（I/F)18側的增設，洗淨站（EXT· COL)108。 在介面站（I/F)18中，基板G是從增設，洗淨站（EXT • COL)108被搬進周邊裝置110的周邊曝光裝置（EE)，在 該處受到在顯像時用以除去附著於基板G的周邊部的曝 光之後，被送至相鄰的曝光裝置（步驟S1 1)。 在曝光裝置12中，於基板G上的光阻被曝光所定電 路圖案。之後，完成圖案曝光的基板G是從曝光裝置12 回到介面站（I/F)18(步驟S11)，則首先被搬進周邊裝置110 的字幕拍錄裝置（TITLER)，在該處所定資訊被記在基板上 的所定站位（步驟S 12)。然後基板G是被送回到增設，洗 淨站（EXT· COL)108。介面站（I/F)18的基板G的搬運及曝 光裝置12的基板G的往來是藉由搬運裝置104所進行。 在處理站（P/S)16中，在第二熱處理部30是搬運機構 90由增設洗淨站（EXT· COL)108接受經曝光的基板G，並 經由處理線B側的烘爐塔（TB)92內的通路單元（PASSR)交 接至顯像處理部32。 在顯像處理部32中，將從該烘爐塔（TB)92內的通路單 元（PASSr)所接受的基板G搬進顯像單元（DEV)94。在顯 像單元（DEV)94中，基板G是朝處理線B下游以平流方式 被搬運，而在該搬運中進行顯像，沖洗，乾燥的一連串顯 像處理工程（步驟S13)。 在顯像處理部32接受顯像處理的基板G是以平流方 式被搬進下游側相鄰的脫色處理部3 4，而在該處接受i線 照射的脫色處理（步驟S 1 4)。經脫色處理的基板G是被搬 -16- 1299286 進第三熱處理部36的上游側烘爐塔（ΤΒ)98內的通路單元 (PASSL)。 在第三熱處理部36中，基板G是最初從該通路單元 (PASSL)被移至加熱單元（PREBAKE)的一單元，在該處受 到後烘的加熱處理（步驟S 1 5)。然後，基板G是被移至下 游側烘爐塔（TB)102內的通路洗淨單元（PASSR · COL)，在 該處被冷卻至所定基板溫度（步驟S1 6)，搬運第三熱處理 部3 6的基板G是藉由搬運機構100所進行。 在晶盒站（C/S)14側，搬運機構22從第三熱處理部36 的通路單元（PASSr · COL)接受完成塗佈顯像處理的全工 程的基板G，並將接受的基板G收容於工作台20上的任一 晶盒C(步驟S1)。 在該塗佈顯像處理系統1 0中，可將本發明適用於塗佈 處理部28，特別是光阻塗佈單元（C 1)82。以下參照第4圖 至第12圖說明將本發明適用於塗佈處理部28的一實施形態 〇 如第4圖所示地，塗佈處理部2 8是在支持台1 1 2上朝X 方向（沿者處理線A) —列地配置光阻塗佈單元（C T) 8 2與減 壓乾燥單元（VD)84。朝X方向延伸的一對導軌丨14，n4 平行地舖設在支持台1 1 2的兩端部，藉由被兩導軌丨丨4， 114引導而移動的一組或複數値搬運臂116，116，成爲可 將基板G從光阻塗佈單元（CT)82轉送至減壓乾燥單元 (CD)84。又，兩導件114，114被拉進與塗佈處理部28相鄰 接的上游側及下游側的單元，亦即被拉進屬於第一熱處理 1299286 部26的下游側烘爐塔（ΤΒ)48的通路單元（PASSR)60，及屬 於第二熱處理部30的上游側烘爐塔（TB)88的通路單元 (PASSR)，成爲使得搬運臂1 16，1 16可出入在兩側的通路 單元（PASSr)，（PASSL)。如此地，藉由搬運臂116，116, 將塗佈處理前的基板G從烘爐塔（TB)48的通路單元 (PASSR)搬進光阻塗佈單元（CT)82。成爲將經塗佈處理的 基板G從減壓乾燥單元（VD)84搬出至烘爐塔（TB)88的通 路單元（PASSL)。 光阻塗佈單元（CT) 82是具有：水平地載置並加以保持 基板G所用的工作台1 18，及使用較長型光阻噴嘴120以 無自旋法將光阻液塗佈在被載置於該工作台1 1 8上的基板 上的基板G上面（被處理面）所用的塗佈處理部122，及將 光阻噴嘴1 2 0的光阻液吐出功能維持或更新在正常狀態所 用的噴嘴更新部124，及塗佈處理之際在光阻噴嘴120中用 以進行爲了安全確實地得到水平一直線的濕潤線WL的濕 潤線底層處理的濕潤線底層處理部1 2 5等。在該實施形態 中，濕潤線底層處理部125設於噴嘴更新部124內。光阻塗 佈單元（CT)82內的各部構成及作用是參照第5圖至第12圖 詳述於後面。 減壓乾燥單元（VD) 8 4是具有：上面開口的托架或淺底 容器型的下部腔126，及氣密地密接或可嵌合在該下部腔 126的上面所構成的蓋狀上部腔（未圖示）。下部腔126是大 約四方形，在中心部配設有水平地載置並加以支持基板G 所用的工作台1 2 8，而在底面的四隅設有排氣口 1 3 0。各排 -18- 1299286 氣口 130是經由排氣管（未圖示）連通於真空泵（未圖示）。在 將上部腔覆蓋於下部腔1 26的狀態，成爲可將密閉兩腔內 的處理空間藉由該真空泵減壓至所定真空度。 在第5圖表示光阻塗佈單元（CT)82的塗佈處理部122的 構成。塗佈處理部122是具有：包含光阻噴嘴120的光阻液 供給部132，及在塗佈處理時將光阻噴嘴120位於工作台 1 18上方而朝箭號方向（X-方向）水平移動亦即進行掃描的 掃描部134。在光阻液供給部132中，光阻噴嘴120是具有 可將工作台118上的基板G以從一端覆蓋至另一端的長度 朝Y方向延伸的較長狀噴嘴本體1 5 0，被連接於來自光阻 液供給源（未圖示）的光阻液供給管136。在噴嘴本體150的 下端面形成有噴嘴長度方向（Y方向）延伸的縫隙狀吐出口 152，掃描部134是具有水平地支持光阻噴嘴120的反π形 支持體138，及在X方向朝雙方向直進移動該支持體138 的掃描驅動部1 40。該掃描驅動部1 40是例如由具導件的線 性馬達機構或滾珠螺旋機構所構成也可以。在X方向中 固定支持體1 3 8，直進移動工作台1 1 8側的構成也可以。在 連接支持體138與光阻噴嘴120的接頭部142，設置用以變 更或調節光阻噴嘴1 20的高度位置的具導件的昇降機構較 理想。調節光阻噴嘴1 20的高度位置，就可任意地設定或 調整光阻噴嘴1 20的下端面或吐出口 1 5 2與工作台1 1 8上的 基板G上面（被處理面）之間的距離間隔亦即間隙的大小。 在第6圖及第7圖，表示一實施例所致的光阻噴嘴1 20 及濕潤線底層處理部125的構成。濕潤線底層處理部125是 1299286 設在工作台1 1 8與在噴嘴掃描方向的下游側（上游側也可以 )相鄰接的噴嘴更新部124內。 在光阻噴嘴120中，噴嘴本體150是如不銹鋼等的防銹 性與加工性優異的金屬所構成：具有方筒狀緩衝部1 54， 及從該緩衝部154朝下端面的吐出口 152推拔狀地延伸的噴 嘴部156。噴嘴部156的相對向的推拔面158，160中，其中 一方的推拔面158成爲前面，而另一方的推拔面160成爲背 面。亦即，光阻噴嘴120是在塗佈處理中分別將噴嘴部156 的前面158朝噴嘴掃描方向（X方向）的前方移動，並將噴 嘴部156的背面160朝同方向的後方移動（第5圖，第9圖， 第1 〇圖）。在緩衝部1 54的內部，設有將由光阻液供給管 136所導入的光阻液一旦儲存而用以均勻化噴嘴長度方向 的壓力所用的緩衝室或鑄孔（未圖示）。在噴嘴部1 5 6的內 部，設有從緩衝部1 54內的鑄孔一直到下端吐出口 1 52朝垂 直下方延伸的縫隙狀流路1 6 1。 濕潤線底層處理部1 2 5是具有：由前面可滲出光阻液 般地所構成的塗佈墊162，及將該塗佈墊162推向光阻噴嘴 120的噴嘴部156的背面160的下半部而朝噴嘴長度方向相 對性地滑動所用的塗佈墊滑動部1 64。 如第7圖所示地，塗佈墊1 62是具有前面開口的框體 166，及被塡充於該框體166內的墊構件168。墊構件168是 具備膨潤性與彈性的纖維質的物質較理想，例如海綿狀物 質或多孔性物質所構成者也可以。在框體1 66的背面結合 有剛性中空管所構成的支持管1 7 0。在濕潤線底層處理中 -20- 1299286 ，成爲來自下述的實用單元1 72內的光阻液供給部的光阻 、 液經該支持管170的流路被供給於框體166內的墊構件168 。在墊構件168的內部，設將框體166的背部側所導入的光 阻液均勻地擴展在整體墊構件所用的鑄孔1 68a也可以。 ^ 塗佈墊滑動部164是配置在設定於噴嘴更新部124內的 濕潤線底層處理用站位於與光阻噴嘴120的噴嘴背面部160 相對面的位置，具有：包含各種驅動部或用力部等的實用 單元172，及載置該實用單元172的機架174，及將該機架 · 174朝與光阻噴嘴120的長度方向（Y方向）平行的水平方向 一直線地移動所用的直線驅動部176。直進驅動部176是以 例如具導件（未圖示）的滾珠機構所構成也可以，或是以線 性馬達機構或皮帶機構等所構成也可以。在Y方向中固 定實用單元172側，而直進移動光阻噴嘴120的構成也可以 。在實用單元172內收容有將光阻液經由支持管170內的流 路供給於塗佈墊162所用的光阻液供給部，或將塗佈墊162 經由支持管1 7〇朝前後方向可移動且水平地支持的支持部 馨 ，或將塗佈墊162與支持管170—體朝前方所推出所用的推 壓部等。在圖示例中，在塗佈墊162與實用單元172側的彈 簧承受部（未圖示）之間橫跨有以支持管170作支持軸的螺 旋彈簧178。實用單元172內的上述推壓部，是具有如氣缸 ，成爲將塗佈墊162以因應於螺旋彈管178的彈簧變形量的 所期望的壓力推壓至光阻噴嘴120的噴嘴部背面160的下半 部。 在此，依據第6圖至第8圖說明濕潤線底層處理部1 25 ' -21 - 1299286 的作用。當完成對於工作台1 1 8上的基板G的塗佈處理之 — 後，爲了對於下一被處理基板G的塗佈處理，令掃描部 134將光阻噴嘴120—直移送至噴嘴更新部124爲止，在濕 潤線底層處理用站進行定位。在濕潤線底層處理部1 2 5中 ~ ，在近接於定位的光阻噴嘴1 20的一端的場所，使得塗佈 墊滑動部164將塗佈墊162相對向於噴嘴部背面160的下半 ' 部。又，將光阻液由實用單元1 72內的光阻液供給部供給 於塗佈墊162之狀態下，一面藉由實用單元172內的推壓部 將塗佈墊以所定壓力推至光阻塗佈部背面1 60的下半部， 一面藉由直進驅動部176內的推壓部將塗佈墊162從光阻噴 嘴1 2 0的一端一直到另一端爲止直線地且一 口氣地滑動至 噴嘴長度方向（Y方向）。較理想是，以一定速度滑動塗佈 墊162，而在光阻噴嘴120的另一端附近不會有停止或減速 地快速通過。 如第8圖所示地，結果，在噴嘴部背面160的下半部光 阻液朝噴嘴長度方向（Y方向）塗在塗佈墊162的通過區域 隹 180。在該噴嘴部背面160的光阻液塗佈領域180內，作爲 塗佈墊162的墊構件168所摩擦的痕跡形成有朝噴嘴長度方 向（Y方向）平行且水平一直線地延伸的多數乃至無數的線 182。此些摩擦線182是在開始下一塗佈處理時被吐出於基 板G上的光阻液以弄濕現象發揮將光阻液塗上領域180上 朝高度方向擴展之際的液面頂點位置水平一直線地規制所 用的水平引導線功能者。在此，以光阻噴嘴120的下端面（ 吐出口 152)作爲基準，將光阻液塗上領域180的上端高度 -22- 1299286 位置Η作成比濕潤線WL的高度位置（預想値）h還充分高（ 例如兩倍以上）較理想。作爲一例，設成h = 0.5 m m，Η = 1 . 0 至 2 · Omm。 在該光阻塗佈單元（CT) 82中，在濕潤線底層處理部 1 2 5進行如上述的濕潤線底層處理之後，將光阻噴嘴1 20藉 由掃描部134移送至工作台1 18的上游側。又，下一未處理 的被處理基板G載於工作台1 18上，則藉由掃描部134將 光阻噴嘴120對位於該基板G上的上游側端部，之後如第 5圖所示地，以X方向縱剖工作台1 1 8的上方般地一面以 一定速度掃描光阻噴嘴120，一面在光阻液供給部132中由 光阻噴嘴120的吐出口 152朝噴嘴長度方向（Y方向）延伸的 線狀吐出流將光阻液R供給於工作台1 1 8上的基板G上面 〇 這時候，如第9圖及第10圖所示地，由噴嘴吐出口 152 被吐出至基板G上的光阻液R藉由弄濕現象附著於光阻 噴嘴120的噴嘴部背面160的下端部朝高度方向擴展（隆起）· 形成有朝噴嘴長度方向延伸的凸面狀彎月面。這時候，在 噴嘴部背面160下半部藉由先前的濕潤線底層處理形成有 光阻液塗上部1 80之故，因而基板G上的光阻液R是由噴 嘴部背面160下端沿著光阻液塗上部180—面接受同領域內 的無數水平一直線的摩擦線1 82所致的水平導線的規制一 面朝高度方向擴展，模仿任何摩擦線1 82般地使得液面頂 點位置穩定化，俾確立水平一直線的濕潤線WL °由此’ 在濕潤線WL的下游側使得濕潤線WL的下游側使得形成 -23- 1299286 在基板G上的光阻塗佈膜RH的膜厚d以所期望値被維持 _ 在一定。 又，即使藉由被使用於塗佈處理的光阻液的種類使得 黏性不穩定而容易形成波狀彎月面時’依照本實施形態藉 胃 由如上述地的光阻液塗上部1 8 0的水平導線功能可將彎月 面的頂點位置規制在水平一直線。由此’大幅地減低條紋 狀塗佈斑駁產生在光阻塗佈膜RM上的可能性。 在噴嘴更新部1 24中，雖省略圖示，也設置洗淨光阻 馨 噴嘴1 2 0的噴嘴部1 5 6所用的噴嘴洗淨部，或在光阻噴嘴 1 20吐出噴嘴內的光阻液用以替換的虛設分配部等。進行 噴嘴洗淨或虛設分配時，在其後進行如上所述的濕潤線底 層處理部1 25所致的濕潤線底層處理也可以。 在第1 1圖表示上述的實施例的濕潤線底層處理部1 25 的一變形例。該變形例是在塗佈墊162前面（主面）的下端 部設置與噴嘴長度方向平行地延伸的凹部184。如第1 1(A) 圖，第11(B)圖所示地，在圖示的例子，在框體166及墊構 鲁 件168的雙方分別設置凹部184。 依照該構成，一面將塗佈墊1 6 2推向噴嘴部背面1 6 0的 _ 下端部，一面朝噴嘴長度方向滑動之際，由墊部1 6 8所滲 出的光阻液儲在凹部184的狀態下附著於噴嘴部背面160的 下端部。其結果，如第1 1(C)圖所示地，在噴嘴部背面160 的下端部形成有朝噴嘴長度方向延伸的光阻液的儲液部 1 8 6。在該狀態下開始下一塗佈處理時，則由光阻噴嘴丨2 〇 的吐出口 1 5 2吐出在基板G上的光阻液藉由弄濕現象附著 · -24- 1299286 於噴嘴部背面1 6 0的下端部而朝高度方向擴展時間被縮短 。由此，可加快開始噴嘴掃描。 在第1 2圖表示其他實施例所致的濕潤線底層處理部 1 2 5的主要部分的構成。該實施例是代替滲出光阻液的塗 佈墊162使用摩擦專用的摩擦墊163。在支持該摩擦墊163 的支持構件1 7 1不必設置通過光阻液的流路。代替將光阻 液例如撒在光阻噴嘴120的噴嘴部背面160下端部所用的光 阻液賦予部188配置於摩擦墊163的滑動方向上游側，並藉 由共通的直進驅動部176(第6圖）朝噴嘴長度方向並進驅動 光阻液賦予部188與摩擦墊163。光阻液賦予部188是可被 連接於實用單元172(第6圖）內的光阻液供給部。摩擦墊 163是與上述實施例的塗佈墊162同樣地如將海綿狀物質或 多孔質物質所構成的墊構件塡充於框體內就可以，首先藉 由光阻液賦予部188將附著於噴嘴部背面160的光阻液一向 朝噴嘴長度方向延伸一面滑動。將該摩擦墊1 63 —面以所 定壓力推向噴嘴部背面160的下半部，一面朝噴嘴長度方 向從光阻噴嘴1 20的一端一直到另一端爲止以一定速度直 線地且一 口氣地滑動也可以。 在該實施例，在噴嘴部背部1 60的下半部通過摩擦墊 1 63之後，與上述實施例同樣地也形成有包含朝噴嘴長度 方向平行且水平一直線地延伸的多數或無數摩擦痕跡線（ 未圖示）的光阻液塗上領域180。因此，在光阻噴嘴120中 經常穩定地可確立水平一直線的濕潤線WL之同時，並可 將膜厚一定且沒有塗佈斑駿的光阻塗佈膜形成在被處理基 -25- 1299286 板上。 在上述的實施形態中，在濕潤線底層處理部1 2 5作爲 塗布在光阻噴嘴120的噴嘴部背面160下端部的塗上液使用 光阻液，惟也可使用以適當溶劑所稀釋光阻液所成的稀釋 光阻液。在濕潤線底層處理部125所使用的光阻液與在塗 佈處理部1 22 ·所使用的光阻液相同者最理想，惟若將主成 分作成相同者而在成份比或濃度等有些不同也可以。 又，在上述實施形態形態中，作成固定光阻噴嘴1 20 的噴嘴部前面158與噴嘴部背面160，而僅在單面的噴嘴部 背面160側施以濕潤線底層處理。但是，欲在雙方向（X,方 向，X +方向）的噴嘴掃描進行塗佈處理時，在噴嘴部156的 兩面158，160施以上述實施形態的濕潤線底層處理也可以 。又，在一方向或固定式時，與噴嘴部背面160 —起在噴 嘴部前面1 5 8也施以濕潤線底層處理。 又，本發明的光阻液塗上部180的摩擦線182，是通常 如上述實施形態地朝噴嘴長度方向水平一直線地延伸較理 想，惟因應於應用而傾斜一直線延伸的形態或彎曲（例如 中心部比周邊部者還高）延伸形態等也可以。 又，濕潤線底層處理中，在噴嘴部背面160塗上光阻 液之後，例如使用CCD攝影機等的攝影裝置攝影噴嘴背 面160來檢查是否有光阻液未塗佈部分。若有未塗佈部分 時，則在噴嘴洗淨部（未圖示）洗淨噴嘴，之後將光阻液再 塗佈於噴嘴部背面1 60。攝影裝置是可配置在噴嘴更新部 1 24或其近旁。藉由此種檢查功能及再塗佈功能，更提高 26- 1299286 濕潤線底層處理的可靠性，而且可更提高塗佈膜品質的可 靠性。 在上述的實施形態是關於一種具有縫隙狀吐出口的較 長型塗佈噴嘴者，惟本發明是也可適用於具有朝噴嘴長度 方向所排列的多數微細孔所構成的吐出口的較長型塗佈噴 嘴。又，上述實施形態是有關於LCD製造的塗佈顯像處 理系統的光阻塗佈裝置，惟本發明是可適用於將塗佈液供 給於被處理基板上的任意應用。作爲本發明的塗佈液，除 了光阻液以外，也包含例如層間絕緣材料，介質材料，配 線材料等的各種塗佈液。在本發明的被處理基板並未被限 定於LCD基板，也包含其他的平板顯示用基板，半導體 晶圓，CD基板，玻璃基板，光罩，印刷基板等。 【圖式簡單說明】 第1圖是表示本發明的可適用的塗佈顯像處理系統的 構成的俯視圖。 · 第2圖是表示實施形態的塗佈顯像處理系統的熱處理 部的構成的側視圖。 _ 第3圖是表示實施形態的塗佈顯像處理系統的熱處理 部的處理順序的流程圖。 第4圖是表示實施形態的塗佈顯像處理系統的熱處理 部的塗佈處理部的構成的俯視圖。 第5圖是表示實施形態的塗佈顯像處理系統的熱處理 部的塗佈處理部的構成圖式。 _ -27- 1299286 第6圖是表示一實施例所致的光阻噴嘴的外觀構成與 濕潤線底層處理部的構成的立體圖。 第7圖是表示一實施例所致的光阻噴嘴的主要部分的 構成與濕潤線底層處理部的主要部分的構成的主要部分剖 視圖。 第8圖是模式地表示實施例的濕潤線底層處理部的作 用的側視圖。 第9圖是表示實施例的濕潤線底層處理的作用效果的 剖視圖。 第1 〇圖是表示實施例的濕潤線底層處理的作用效果的 立體圖。 第1 1圖是表示一變形例所致的濕潤線底層處理部的主 要部分的構成與作用的立體圖。 第1 2圖是表示另一實施例所致的濕潤線底層處理部的 主要部分的構成與作用的立體圖。 第1 3圖是表示習知的縫隙型光阻噴嘴的外觀構成與作 用的立體圖。 【主要元件符號說明】 1 6 :處理站 28 :塗佈處理部 82:光阻塗佈單元（CT) 1 1 8 :工作台 120 :光阻噴嘴 28- 1299286 122 :塗佈處理部 125 :濕潤線底層處理部 1 5 0 :噴嘴本體 1 5 2 :吐出口 1 5 6 :噴嘴部 1 5 8 :噴嘴部前面 160 :噴嘴部背面[Technical Field] The present invention relates to a coating method and a coating apparatus for forming a coating film by applying a liquid onto a substrate to be processed using a long coating nozzle. [Prior Art] Conventionally, in a lithography imaging process such as an LCD or a semiconductor device, it is used as a photoresist nozzle for applying a photoresist to a substrate to be processed (a glass substrate, a semiconductor wafer, or the like). In one form, there is a long type resist nozzle having a slit-like discharge port as disclosed in Patent Document 1. As shown in Fig. 1, the photoresist coating apparatus using such a long nozzle is a substrate G and a long light that are horizontally placed on a mounting table or a holding plate (not shown). A small gap of several hundred//m or less is set between the lower end discharge ports of the resistance nozzle 200, and the photoresist nozzle 200 is moved upward in the scanning direction (generally in a horizontal direction orthogonal to the nozzle longitudinal direction) above the substrate G, The photoresist is discharged onto the substrate G. At this time, the photoresist liquid which is discharged on the substrate G is adhered to the lower portion 2〇〇a of the back surface of the resist nozzle 200 by the wet phenomenon, and is expanded in the height direction (raised), and a convex curved shape extending in the longitudinal direction of the nozzle is formed. Moon surface. The shape of the meniscus is determined by the surface tension and viscosity of the photoresist, the shape of the nozzle spout, or the shape of the back surface. In the steady state, the apex position of the meniscus is stabilized at a certain height line, that is, it is stable. Wet line WL. As long as the wet line WL is horizontal at a certain height position, a coating film of a photoresist liquid is formed on the substrate G with a constant film thickness. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei 8-138991 1299286. In the above, in the photoresist coating apparatus using the longer type resistive nozzle 200, the photoresist nozzle 200 is attached to the photoresist nozzle 200 by a wet phenomenon in the coating process. The apex line or the wet line WL of the photoresist on the lower surface of the back surface is related to the contour of the photoresist coating film on the substrate. As long as the wet line WL maintains a horizontal line at a certain height position, a photoresist is formed on the substrate with a certain film thickness. Coating film. However, in such a conventional photoresist coating apparatus, there is a problem that it is difficult to stably obtain a wet line WL of a horizontal straight line, or a wavy meniscus is easily formed by the kind of the photoresist liquid. As shown in Fig. 3, there is a problem that the linear coating mottle 204 which extends in the scanning direction at the position on the substrate G of the wave head 202 corresponding to the wavy meniscus is generated. SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and it is an object of the invention to provide a film having a constant thickness and a constant thickness on a substrate to be processed in a long-sized coating nozzle. A coating method and a coating device for a mottled coating film. In order to achieve the above object, the coating method of the present invention is to set a desired minute gap between a substrate to be processed of approximately horizontal and a discharge port provided at a lower end surface of a long coating nozzle, and to apply a coating process. In the state in which the coating liquid discharged from the discharge port is discharged from the substrate so that the lower end portion of the coating nozzle is wetted, the coating nozzle is relatively moved in a horizontal direction orthogonal to the longitudinal direction of the nozzle. Further, a coating method for applying the coating liquid on the substrate is characterized in that the coating liquid or the diluted coating liquid diluting the coating liquid is applied to the coating in the nozzle length direction before the coating treatment. The bottom of the nozzle is wetted at the lower end of the -5 - 1299286 line. A coating apparatus according to the present invention includes: a long coating nozzle having a discharge port at a lower end surface; and a first coating liquid supply portion 9 for supplying a coating liquid to the coating nozzle to support the substrate substantially horizontally a substrate supporting portion to be used; the nozzle supporting portion for the coating nozzle is supported by the substrate in the substrate support portion with a desired small gap in the coating process; and the coating nozzle is sprinkled during the coating process The coating liquid which is discharged from the substrate on the substrate so that the lower end portion of the coating nozzle is wetted, and the substrate supporting portion is relatively moved in the horizontal direction substantially perpendicular to the longitudinal direction of the nozzle. a scanning unit for relatively horizontally moving between the nozzle support portion; and a coating liquid or a diluted coating liquid for diluting the coating liquid applied to the back surface of the coating nozzle in a nozzle length direction before the coating treatment The wet line underlayer processing portion at the lower end portion. In the present invention, before the coating treatment, the wet coating underlayer treatment portion is applied to the lower end portion of the back surface of the coating nozzle by applying the coating liquid or the diluted coating liquid diluting the coating liquid to the nozzle length direction. In the cloth treatment, the expansion of the lower end portion of the back surface of the coating nozzle due to the wetness of the coating liquid discharged from the coating nozzle can be smoothly performed, and the liquid surface vertex position or the wet imitation coating direction can be stabilized. According to a preferred embodiment of the present invention, in the wet-line underlayer treatment process, the coating pad which is oozing from the coating liquid or the diluted coating -6 - 1299286 is applied to the lower end portion of the coating nozzle. Slides relatively toward the length of the nozzle. At this time, the coating pad is slid in the longitudinal direction of the nozzle by applying the coating liquid or the diluted coating liquid to the lower end portion of the coating nozzle, and can be formed in a satisfactory and effective manner. The application line of the coating line for the friction wire used in the line. Preferably, the coating pad has a pad member made of a sea-like substance or a porous substance, and the pad member may be brought into contact with the lower end portion of the back surface of the coating nozzle to be slid. Further, in order to obtain a good linear friction wire, it is preferable to slide the coating pad from one end of the lower end portion of the back surface of the coating nozzle to the other end. According to a preferred aspect of the present invention, the coating pad has a concave portion extending in parallel with the longitudinal direction of the nozzle at a lower end portion of the main surface of the pad which is in contact with the lower end portion of the coating nozzle, and is formed at the lower end portion of the back surface of the coating nozzle. A coating liquid extending in the longitudinal direction of the nozzle or a liquid storage portion for diluting the coating liquid is formed. When the liquid coating portion of the coating liquid or the diluted coating liquid is provided at the lower end portion of the coating nozzle at the lower end portion of the coating nozzle, the next coating treatment is started, and the coating liquid discharged from the discharge port of the coating nozzle is discharged by the coating liquid. The wet phenomenon adheres to the lower end portion of the back surface of the nozzle portion, and the time for expanding in the height direction can be shortened', and the nozzle scanning can be accelerated. According to a preferred aspect of the present invention, in the wet-line underlayer treatment process, the friction pad is pushed toward the nozzle length in the state in which the coating liquid or the dilute coating liquid is supplied to the lower end portion of the coating nozzle. Sliding relatively. In this case, the friction pad is first slid by extending the coating liquid or the dilute coating liquid adhering to the lower end portion of the coating nozzle toward the nozzle length direction, so that it can be formed in a satisfactory and effective manner. -7- 1299286 The coating solution for the friction wire used in the wire is applied to the field. Preferably, the friction pad has a pad member made of a sponge-like substance or a porous substance, and the pad member may be brought into contact with the lower end portion of the back surface of the coating nozzle to be slid. Further, in order to obtain a good linear friction wire, it is preferable to slide the friction pad from one end of the lower end portion of the back surface of the coating nozzle to the other end. In the present invention, the coating liquid applied to the lower end portion of the back surface of the coating nozzle in the wet-line underlayer treatment is preferably the same as the coating liquid applied to the substrate, and if the basic components are the same, the composition is the same. It may be different than the concentration or concentration. According to the coating method and the coating apparatus of the present invention, by the configuration and action as described above, a good wet line can be stably obtained in a long type coating nozzle, whereby a film thickness is formed on the substrate to be processed. There must be no coated mottled coating film. [Embodiment] Hereinafter, a suitable embodiment of the present invention will be described with reference to Figs. 1 to 1 2 . Fig. 1 is a coating development processing system to which a coating method and a coating apparatus of the present invention are applied. The coating development processing system 10 is installed in a clean room, for example, using an LCD substrate as a substrate to be processed, and performing lithography imaging cleaning, photoresist coating, pre-baking, development, and main processing in an LCD process. Bake a series of processors. The exposure process uses an external exposure device 12 that is adjacent to the processing system. The coating development processing system 1 is configured such that a horizontally long processing table -8 - 1299286 (P/S) 16 is disposed at the center portion, and a crystal cassette station (C/ is disposed at both ends in the longitudinal direction (X direction). S) 14 and interface station (I/F) 18. The cassette station (C/S) 14 is a cassette loading/unloading path of the system 10, and includes a plurality of cassettes C which are multiplicably stacked in a plurality of stages, for example, arranged in the horizontal direction in the Y direction. The cassette stage 20 that can be placed and the transport mechanism 22 that allows the substrate G to enter and exit the cassette C on the stage 20. The transport mechanism 22 is a means for holding the substrate G, for example, the transport arm 22a, and is operable on four axes of X, Y, Z, 0, and is a processing station (P/S) 16 side and a substrate G that can be adjacent to each other. The intersection. The processing station (P/S) 16 is a pair of lines A extending in the opposite direction in the longitudinal direction of the system (X direction), and B arranges the processing units in the processing order or the engineering order. More specifically, the cleaning processing unit 24 and the first heat treatment unit 26 are disposed in a row from the wafer stage (C/S) 14 side toward the upstream processing line A on the interface station (I/F) 18 side. And the coating treatment unit 28 and the second heat treatment unit 30. On the other hand, in the processing line B from the interface station (I/F) 18 side to the downstream portion, the second heat treatment unit 30, the development processing unit 32, and the decoloring processing unit 34 are disposed in a row, and The third heat treatment portion 36. In the line form, the second heat treatment portion 30 is located at the last position of the processing line A on the upstream side, and is located at the front end position of the processing line B on the downstream side, spanning between the two lines A and B. In the two processing lines A, B, the auxiliary transport space 38 is provided so that the shuttle 40 that can horizontally mount the substrate G in one unit can be moved in two directions in the line direction (X direction) by a drive mechanism (not shown). . In the processing line A of the upstream portion, the cleaning processing unit 24 includes a scrubbing cleaning unit (SCR) 42 adjacent to the cassette 1299286 station (C/S) 10 in the scrubbing cleaning unit (SCR) 42. The excimer UV irradiation unit (e-UV) 41 is disposed at the place where it is connected. In the cleaning unit in the cleaning and cleaning unit (SCR) 42, the substrate G is conveyed by the roller conveyance or the belt conveyance in the horizontal direction while being conveyed in the horizontal direction on the upper surface (the surface to be processed) of the substrate G. Wash with net or blow. The first heat treatment unit 2 6 adjacent to the downstream side of the cleaning processing unit 24 is provided with a vertical conveyance mechanism 46 along the processing line A at the center portion. A multi-stage unit portion or an oven tower (TB) 44 formed by stacking a plurality of single-stage oven units or a passage unit for transferring substrates in a plurality of stages is provided on the front and rear sides thereof, for example, as shown in FIG. In the oven tower (TB) 44 on the upstream side, the channel unit for substrate loading (P AS SiJ50, heating unit (DHP) 52, 54 for dehydration and drying, and the attachment unit (AD) 56 are superposed on each other in this order. Here, the passage unit (PASSL) 50 is a space for feeding the processed substrate G from the cleaning process of the brush cleaning unit (CSR) 42 into the first heat treatment unit 26. The oven tower on the downstream side (TB) 48, in which the channel unit (P AS SR) 60 for substrate unloading, the cooling units (COL) 62 and 64 for substrate temperature adjustment, and the adhesion unit (AD) 66 are stacked in this order. (P AS SR) 60 is a space for carrying out the coating processing unit 28 that carries out the heat treatment of the substrate G in the first heat treatment unit 26 to the downstream side. In the second figure, the transport mechanism 46 has: The lifting and lowering body 70' that can be moved up and down along the guide rail 68 extending in the vertical direction The slewing carrier 72 that is rotatable or rotatable in the zero direction on the elevating transport body 70, and the transport arm or the cymbal 74 that supports the substrate G on the slewing carrier 72 so as to be able to advance or retract in the front-rear direction. The drive -10- 1299286 movable portion 76 for the elevating and transporting body 70 is provided on the proximal end side of the vertical guide rail 68; the drive portion 78 for swinging the gyroscopic transport body 72 is attached to the elevating transport body 70; and the drive for advancing and retracting the transport arm 74 is used. The unit 80 is attached to the rotary transport body 72. Each of the drive units 76, 78, and 80 can be configured by using a motor or the like. The transport mechanism 46 configured as described above is movable at a high speed or in a swing motion and can be accessed in two phases. Any one of the adjacent oven towers (TB) 44, 48 serves as a transferable substrate G to the shuttle 40 on the auxiliary transfer space 38 side. As shown in Fig. 1, adjacent to the first heat treatment portion 26 The coating processing unit 28 on the downstream side arranges the photoresist coating unit (CT) 8 2 and the reduced-pressure drying unit (VD) 84 along the processing line A. The configuration in the coating processing unit 28 is as follows. The description will be given in the vicinity of the downstream side of the coating processing unit 28. The second heat treatment unit 30 has the same configuration as the first heat treatment unit 26; a vertical conveyance mechanism 90 is provided between the two treatment lines A and B; and one of the oven towers is provided on the treatment line A side (the last end) ( TB) 88; The other oven tower (TB) 92 is disposed on the processing line B side (front). The illustration is omitted, but for example, the oven tower (TB) 88 on the processing line A side is provided with the substrate at the lowermost stage. A passage unit (PASS L) for carrying in, and a heating unit (PREBAKE) such as a three-stage pre-baking may be superposed thereon. Further, in the oven tower (TB) 92 on the processing line B side, a channel unit (PASS R) for substrate unloading is disposed in the lowermost stage, and a cooling unit for adjusting the temperature of the three-stage substrate is superposed thereon (COL) And, on top of it, a heating unit (PREBAKE) such as two-stage pre-baking can be overlapped. The transport mechanism 90 of the second heat treatment unit 30 is via the respective pass unit (PASS1) of the two oven towers (TB) 8 8 -11 - 1299286 '92, and (pAsSR) is not only the coating processing unit 28 and the development processing unit. The substrate G can be transferred in one unit, and the substrate can be transferred in one unit with the shuttle 40 in the auxiliary transport space 38 or the interface station (I/F) 18 described below. In the processing line B of the downstream portion, the development processing unit 32 is a so-called advection type development unit (DEV) 94 that performs a series of development processing while transporting the substrate in a horizontal posture. The third heat treatment unit 36 is disposed on the downstream side of the development processing unit 32 via the decoloring processing unit 34. The decoloring processing unit 34 is an i-line UV irradiation unit (i-UV) 96 that performs a decoloring process by irradiating an i-line (wavelength of 3 to 65 nm) on the surface to be processed of the substrate G. The third heat treatment unit 36 has the same configuration as the first heat treatment unit 26 or the second heat treatment unit 30; the vertical conveyance mechanism 1 is disposed along the treatment line B, and a pair of oven towers are disposed on the front and rear sides thereof ( TB) 98,102. In the oven tower (TB) 98 on the upstream side, for example, a channel unit (P AS SL) for substrate loading is provided in the lowermost stage, and a heating unit for post-drying of the three stages is superimposed thereon. (PREBAKE). Further, in the downstream furnace tower (TB) 102, a post-drying unit (POBAKE) is provided in the lowermost stage, and a path cleaning unit (P AS SR · COL) for substrate unloading and cooling is superimposed thereon. The heating unit (POBAKE) on which the two sections are superimposed and baked is the passage unit (PASSL) and the passage unit (PASSR · COL) via the two-stage unit parts (TB) 98, 102. Not only the i-line UV irradiation unit (i-UV) 96 and the crystal box station -12- 1299286 (C/S) 14 can be transferred to G in one unit, but also in the auxiliary handling space 38. The substrate G is transferred in one unit. The interface station (I/F) 18 is a transport device 104 for transporting the adjacent exposure device 12 and the substrate G, and a buffer station ~ (BUF) 106 is disposed around the buffer station (EXT · COL). 108 and peripheral device 110. A buffer type cassette (not shown) is provided in the buffer station (BUF) 106. The additional washing station EXT station (EXT·COL) 108 is a substrate transfer table having a cooling function, and is used to exchange the substrate G with the processing station (P/S) 16 side. The peripheral device 1 1〇 is a configuration of a top subtitle recording device (TITLER) and a peripheral exposure device. The transporting device 104 is a means for holding the substrate G, such as the transport arm 104a, and is an adjacent exposure device 12 or each unit (BUF) 106, (EXT·COL) 108, (TITLER/EE) 10 10 and a substrate. Handover. The processing sequence of the coating development processing system is shown in Fig. 3. First, in the cassette station (C/S) 14, the transport mechanism 22 takes out a substrate G from any of the cassettes C on the table 20, and carries it into the cleaning processing unit of the processing station (P/S) 16. An excimer UV irradiation unit (i-UV) 41 of 24 (step S1). The Lu substrate G is a dry cleaning by ultraviolet irradiation in the excimer UV irradiation unit (i-UV) 41 (step S2). The ultraviolet light is washed to remove mainly the organic matter on the surface of the substrate. After the ultraviolet ray cleaning is completed, the substrate G is moved to the cleaning and cleaning unit (SCR) 42 of the cleaning processing unit 24 by the transport mechanism 22 of the cassette station (C/S) 14. In the brush cleaning unit (SCR) 42, as described above, the substrate G is transported by roller or belt, and is horizontally flowed in the direction of the processing line A while being applied to the upper surface of the substrate G (processed surface) by brushing. Or air-washing -13 - 1299286 to remove particulate matter from the surface of the substrate (step S3). Further, after the cleaning, the smoothing substrate G is also subjected to a rinsing treatment on the surface side, and finally, the undried substrate G such as an air knife is used. The substrate G subjected to the cleaning treatment in the brush cleaning unit (SCR) 42 is a passage unit (PASSL) 50 that is carried into the upstream side oven tower (TB) 44 of the first heat treatment unit 26 in an advection manner. In the first heat treatment portion 26, the substrates G are sequentially transferred to the predetermined oven unit in a predetermined order by the transport mechanism 46. For example, the substrate G is a unit that is initially moved from the path unit (PASS L) 50 to the heating unit (DHP) 52, 53 where it is subjected to dehydration processing (step S4). Thereafter, the substrate G is moved to a unit of the cooling unit (COL) 62, 64 where it is cooled to a certain substrate temperature (step S5). Then, the substrate G is moved to the attaching unit (AD) 56. It is subjected to hydrophobization treatment there (step S6). After the completion of the hydrophobization treatment, the substrate G is cooled to a certain substrate temperature by a unit of the cooling unit (COL) 62, 64 (step S7). Finally, the substrate G is a via unit (PASS R) 60 that is moved into the downstream side oven tower (TB) 48. In the first heat treatment unit 26, the substrate G is arbitrarily transferred between the multistage oven tower (TB) 44 on the upstream side and the oven tower (TB) 48 on the downstream side via the transport mechanism 46. Further, the second substrate and the third heat treatment portions 30 and 36 can perform the same substrate transfer operation. The substrate G subjected to the treatment of a series of thermal or thermal systems as described above in the first heat treatment portion 26 is moved from the via unit (PASSR) 60 in the downstream side oven tower (TB) 48 to the photoresist coating unit (CT). ) 82. In the photoresist coating unit (CT) 82, the substrate G is coated with a photoresist solution onto the substrate (the surface to be processed) by a spin-free method of using a slit type coating nozzle of -14-9999286 as follows. . Then, the substrate G is a drying process in which the reduced-pressure drying unit (VD) 84 adjacent to the downstream side is subjected to pressure reduction (step S8). The substrate G subjected to the photoresist coating treatment as described above is a passage unit (PASSL) that is carried into the upstream side oven tower (TB) 88 of the adjacent second heat treatment unit 30 from the reduced pressure drying unit (VD) 84. . In the second heat treatment unit 30, the substrate G is transferred to the predetermined unit in the order specified by the transport mechanism 90. For example, the substrate G is a unit that is first moved from the pass unit (PASSL) to the heating unit (PREBAKE), and is subjected to heat treatment of pre-baking (step S9). Thereafter, the substrate G is a unit that is moved to the cooling unit (COL) where it is cooled to a certain substrate temperature (step S10). Then, the substrate G is a via (PASSR) on the downstream side oven tower (TB) 92 side, or an additional cleaning station (EXT · COL) 108 that is delivered to the interface station (I/F) 18 side without passing. The substrate G subjected to the photoresist coating treatment as described above is a passage unit (PASSL) that is carried into the upstream side oven tower (TB) 88 of the adjacent second heat treatment unit 30 from the reduced pressure drying unit (VD) 84. ). In the second heat treatment unit 30, the substrate G is sequentially transferred to a predetermined unit by the transport mechanism 90 in a predetermined order. For example, the substrate G is a unit that is initially moved from the via unit (PASSL) to the heating unit (PREBAKE), where it is subjected to pre-baking heat treatment (step S9). Thereafter, the substrate G is moved to a unit of the cooling unit (COL) where it is cooled to a certain substrate temperature (step S10). Then, the substrate G is a via unit (PASSR) on the downstream side oven tower (TB) 92 side, or an additional station that is delivered to the interface -15-1299286 station (I/F) 18 side without passing through, a washing station ( EXT·COL) 108. In the interface station (I/F) 18, the substrate G is a peripheral exposure device (EE) that is loaded from the peripheral station 110 by an additional station (EXT • COL) 108, where it is used for development. After the exposure attached to the peripheral portion of the substrate G is removed, it is sent to an adjacent exposure device (step S11). In the exposure device 12, the photoresist on the substrate G is exposed to a predetermined circuit pattern. Thereafter, the substrate G on which the pattern exposure is completed is returned from the exposure device 12 to the interface station (I/F) 18 (step S11), and is first carried into the subtitle recording device (TITLER) of the peripheral device 110, where the information is determined. It is recorded in a predetermined station on the substrate (step S12). The substrate G is then sent back to the add-on, cleaning station (EXT·COL) 108. The transport of the substrate G of the interface station (I/F) 18 and the travel of the substrate G of the exposure device 12 are performed by the transport device 104. In the processing station (P/S) 16, in the second heat treatment unit 30, the transport mechanism 90 receives the exposed substrate G from the additional cleaning station (EXT·COL) 108, and passes through the oven tower on the processing line B side ( The channel unit (PASSR) in TB) 92 is transferred to the development processing unit 32. In the development processing unit 32, the substrate G received from the via unit (PASSr) in the oven tower (TB) 92 is carried into the development unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is a series of development processing processes in which the substrate G is conveyed in an advection manner downstream of the processing line B, and is developed, washed, and dried during the conveyance (step S13). The substrate G that has been subjected to the development processing by the development processing unit 32 is moved into the decoloring processing unit 34 adjacent to the downstream side in an advection manner, and receives the decoloring processing of the i-line irradiation there (step S14). The decolorized substrate G is a via unit (PASSL) that is carried into the upstream side oven tower 98 of the third heat treatment unit 36 by the -16-1299286. In the third heat treatment portion 36, the substrate G is a unit that is first moved from the passage unit (PASSL) to the heating unit (PREBAKE), where it is subjected to post-baking heat treatment (step S15). Then, the substrate G is moved to the via cleaning unit (PASSR·COL) in the downstream side oven tower (TB) 102, where it is cooled to a predetermined substrate temperature (step S16), and the third heat treatment unit 3 is carried. The substrate G of 6 is carried by the transport mechanism 100. On the side of the cassette station (C/S) 14, the transport mechanism 22 receives the entire substrate G that has been subjected to the coating development process from the via unit (PASSr·COL) of the third heat treatment unit 36, and accommodates the received substrate G. Any of the cassettes C on the table 20 (step S1). In the coating development processing system 10, the present invention can be applied to the coating treatment portion 28, particularly the photoresist coating unit (C1) 82. Hereinafter, an embodiment in which the present invention is applied to the coating processing unit 28 will be described with reference to FIGS. 4 to 12, as shown in FIG. 4, and the coating processing unit 28 is oriented on the support table 1 1 2 toward the X direction. (Along the process line A) - A photoresist coating unit (CT) 8 2 and a vacuum drying unit (VD) 84 are arranged in a row. A pair of guide rails ,14, n4 extending in the X direction are laid in parallel at both end portions of the support table 112, and a group or a plurality of transport arms 116, 116 are moved by being guided by the two guide rails ,4, 114. The substrate G can be transferred from the photoresist coating unit (CT) 82 to the reduced-pressure drying unit (CD) 84. Further, the two guide members 114, 114 are pulled into the unit on the upstream side and the downstream side adjacent to the coating processing portion 28, that is, pulled into the downstream side oven tower (ΤΒ) belonging to the first heat treatment 1299286 portion 26. The passage unit (PASSR) 60 of 48 and the passage unit (PASSR) belonging to the upstream side oven tower (TB) 88 of the second heat treatment unit 30 serve as passage units for allowing the transport arms 1 16, 16 to enter and exit on both sides. (PASSr), (PASSL). In this manner, the substrate G before the coating process is carried into the photoresist coating unit (CT) 82 from the via unit (PASSR) of the oven tower (TB) 48 by the transfer arms 116, 116. It is a passage unit (PASSL) that carries out the coated substrate G from the reduced-pressure drying unit (VD) 84 to the oven tower (TB) 88. The photoresist coating unit (CT) 82 has a table 1 18 for horizontally placing and holding the substrate G, and a photoresist film 120 for coating the photoresist with a spin-free method. The coating processing unit 122 used for the upper surface (processed surface) of the substrate G placed on the substrate on the stage 1 18 and the photoresist discharge function of the photoresist nozzle 120 are maintained or updated in a normal state. The nozzle refreshing unit 124 used and the wet-line underlayer processing unit 12.5 for performing the wet-line underlayer treatment for reliably obtaining the horizontal line wet line WL in the resist nozzle 120 during the coating process. In this embodiment, the wet line underlayer processing unit 125 is provided in the nozzle refreshing unit 124. The configuration and function of each part in the photoresist coating unit (CT) 82 are described later in detail with reference to Figs. 5 to 12 . The reduced-pressure drying unit (VD) 804 is a lower chamber 126 having an open upper bracket or a shallow bottom container type, and a lid-shaped upper chamber which is airtightly attached or fitted to the upper surface of the lower chamber 126 (not shown). The lower chamber 126 is formed in a substantially square shape, and a table 1 2 8 for horizontally placing and supporting the substrate G is disposed at the center portion, and an exhaust port 1 300 is provided at the bottom surface. Each row -18 - 1299286 port 130 is connected to a vacuum pump (not shown) via an exhaust pipe (not shown). In a state where the upper chamber is covered in the lower chamber 126, the processing space in the sealed chambers can be depressurized to a predetermined degree of vacuum by the vacuum pump. Fig. 5 shows the configuration of the coating processing unit 122 of the photoresist coating unit (CT) 82. The coating processing unit 122 includes a photoresist supply unit 132 including the photoresist nozzle 120, and horizontally moves the photoresist nozzle 120 above the table 1 18 in the arrow direction (X-direction) during the coating process. That is, the scanning unit 134 that scans. In the resist liquid supply portion 132, the photoresist nozzle 120 is a long nozzle body 150 that has a length in which the substrate G on the table 118 is extended from the one end to the other end in the Y direction, and is connected to A photoresist supply pipe 136 from a photoresist supply source (not shown). A slit-shaped discharge port 152 extending in the longitudinal direction of the nozzle (Y direction) is formed on the lower end surface of the nozzle body 150, and the scanning portion 134 is an anti-π-shaped support body 138 having a horizontal support for the photoresist nozzle 120, and is oriented in the X direction. The scanning drive unit 140 of the support 138 is moved in a straight direction. The scanning drive unit 140 may be constituted by, for example, a linear motor mechanism having a guide or a ball screw mechanism. It is also possible to fix the support 1 3 8 in the X direction and to move the 1 1 8 side of the moving table. It is preferable to provide a lifting mechanism with a guide for connecting or adjusting the height position of the photoresist nozzle 120 to the joint portion 142 of the support body 138 and the photoresist nozzle 120. By adjusting the height position of the photoresist nozzle 120, it is possible to arbitrarily set or adjust the lower end surface of the photoresist nozzle 120 or the discharge port 15 2 and the upper surface (processed surface) of the substrate G on the table 1 18 The distance is also the size of the gap. In the sixth and seventh drawings, the configuration of the resist nozzle 126 and the wet-line underlayer processing unit 125 in one embodiment is shown. The wet line bottom processing unit 125 is 1299286 provided in the nozzle updating unit 124 adjacent to the downstream side (upstream side) of the nozzle scanning direction. In the resist nozzle 120, the nozzle body 150 is made of a metal excellent in rust resistance and workability such as stainless steel, and has a rectangular tubular buffer portion 15.4 and a discharge port 152 that is lowered from the buffer portion 154 toward the lower end surface. A nozzle portion 156 that extends in a pull-out manner. Among the opposing push-out surfaces 158, 160 of the nozzle portion 156, one of the push-out surfaces 158 is the front surface, and the other push-out surface 160 is the back surface. In other words, in the coating process, the front surface 158 of the nozzle portion 156 is moved forward in the nozzle scanning direction (X direction), and the back surface 160 of the nozzle portion 156 is moved rearward in the same direction (5th) Figure, Figure 9, Figure 1). Inside the buffer portion 1 54 is provided a buffer chamber or a casting hole (not shown) for storing the photoresist introduced by the photoresist liquid supply pipe 136 for uniformizing the pressure in the longitudinal direction of the nozzle. In the inner portion of the nozzle portion 156, a slit-like flow path 161 extending from the casting hole in the buffer portion 1 54 to the lower end discharge port 1 52 extending vertically downward is provided. The wet wire underlayer processing unit 1 2 5 has a coating pad 162 formed of a photoresist layer permeable to the front surface, and the coating pad 162 is pushed down the back surface 160 of the nozzle portion 156 of the photoresist nozzle 120. The coating pad sliding portion 1 64 is relatively slid in the longitudinal direction of the nozzle. As shown in Fig. 7, the coating pad 1 62 is a frame body 166 having a front opening, and a pad member 168 which is fitted in the frame body 166. The pad member 168 is preferably a fibrous material having swellability and elasticity, and may be composed of a sponge substance or a porous substance. A support tube 170 formed of a rigid hollow tube is joined to the back surface of the frame 1 66. In the wet-line underlayer treatment, -20 to 1299286, the photoresist from the photoresist supply unit in the practical unit 1 72 described below, and the spacer member supplied to the housing 166 through the flow path of the support tube 170. 168. In the inside of the pad member 168, it is also possible to uniformly spread the photoresist introduced into the back side of the frame 166 to the casting hole 168a for the integral pad member. The coating pad sliding portion 164 is disposed at a position opposite to the nozzle back surface portion 160 of the resist nozzle 120, and is provided in the nozzle refreshing portion 124, and includes various driving portions or force portions. The utility unit 172 and the frame 174 on which the utility unit 172 is placed, and the linear drive unit 176 for moving the frame 174 in a horizontal direction parallel to the longitudinal direction (Y direction) of the resist nozzle 120 . The linear drive unit 176 may be constituted by, for example, a ball mechanism having a guide (not shown), or may be constituted by a linear motor mechanism or a belt mechanism. The configuration of the utility unit 172 is fixed in the Y direction, and the configuration of the straight moving shutter 120 is also possible. In the utility unit 172, a photoresist supply unit for supplying the photoresist liquid to the coating pad 162 via the flow path in the support tube 170 is accommodated, or the coating pad 162 is movable in the front-rear direction via the support tube 17 7 . And the supporting portion that is horizontally supported, or the pressing portion or the like for pushing the coating pad 162 and the support tube 170 toward the front. In the illustrated example, a coil spring 178 having a support tube 170 as a support shaft is spanned between the coating pad 162 and a spring receiving portion (not shown) on the side of the utility unit 172. The pressing portion in the utility unit 172 has a cylinder such that the coating pad 162 is pressed against the nozzle portion back surface 160 of the resist nozzle 120 by a desired pressure in accordance with the amount of spring deformation of the spiral tube 178. The lower half. Here, the action of the wet wire underlayer processing section 1 25 ' - 21 - 1299286 will be described based on Figs. 6 to 8 . After the coating process for the substrate G on the stage 1 18 is completed, the scanning unit 134 is caused to directly transfer the photoresist nozzle 120 to the nozzle updating portion 124 for the coating process for the next substrate G to be processed. Up to now, the wet bottom line processing station performs positioning. In the wet-line underlayer processing portion 1 2 5 , at the end of the photoresist nozzle 126 adjacent to the positioning, the coating pad sliding portion 164 faces the coating pad 162 toward the lower half of the nozzle portion back surface 160. unit. Further, when the photoresist liquid is supplied from the photoresist supply unit in the practical unit 1 72 to the coating pad 162, the coating pad is pushed to the photoresist at a predetermined pressure by the pressing portion in the practical unit 172. The lower half of the coating portion back surface 1 60 slides the coating pad 162 linearly and one-stop from one end to the other end of the resist nozzle 1 2 0 by the pressing portion in the straight driving portion 176 to Nozzle length direction (Y direction). Preferably, the application pad 162 is slid at a certain speed, and there is no rapid stop of stopping or decelerating near the other end of the photoresist nozzle 120. As shown in Fig. 8, as a result, the photoresist in the lower half of the nozzle portion back surface 160 is applied to the passage region 隹 180 of the coating pad 162 in the nozzle longitudinal direction (Y direction). In the photoresist liquid application area 180 of the nozzle portion back surface 160, the traces rubbed by the pad member 168 as the coating pad 162 are formed with a plurality of even a myriad of parallel lines extending in the longitudinal direction of the nozzle (Y direction). Line 182. The rubbing wires 182 are liquid level apex levels which are discharged from the photoresist G on the substrate G at the start of the next coating process to exert a wet phenomenon to spread the photoresist on the field 180 in the height direction. A horizontal guideline function used in a straight line. Here, with the lower end surface (discharge port 152) of the photoresist nozzle 120 as a reference, the photoresist liquid is applied to the upper end of the field 180 at a height -22 - 1299286, and the height position (predicted h) h of the wet line WL is made. Fully high (for example, more than twice) is ideal. As an example, set h = 0. 5 m m, Η = 1 . 0 to 2 · Omm. In the photoresist coating unit (CT) 82, after the wet line underlayer processing portion 1 2 5 performs the wet line underlayer treatment as described above, the photoresist nozzle 110 is transferred to the stage 1 18 by the scanning portion 134. Upstream side. Further, when the next unprocessed substrate G is placed on the stage 18, the photoresist portion 120 is placed on the upstream end of the substrate G by the scanning portion 134, and then as shown in FIG. The photoresist nozzle 120 is scanned at a constant speed in the X-direction longitudinal section of the table 1 18, and is formed in the photoresist liquid supply portion 132 by the discharge port 152 of the photoresist nozzle 120 toward the nozzle length direction (Y direction). The extended linear discharge stream supplies the photoresist R to the upper surface of the substrate G on the stage 1 18, and at this time, as shown in FIGS. 9 and 10, the nozzle discharge port 152 is discharged to the substrate G. The upper photoresist R adheres to the lower end portion of the nozzle portion back surface 160 of the resist nozzle 120 by a wet phenomenon to expand in the height direction (bump). A convex meniscus extending in the longitudinal direction of the nozzle is formed. At this time, in the lower half of the back surface 160 of the nozzle portion, the photoresist liquid coating upper portion 180 is formed by the previous wet line underlayer treatment, so that the photoresist liquid R on the substrate G is along the lower end of the nozzle portion rear side 160 along the light. The upper side of the liquid-repellent coating 180-face receives the friction line of the innumerable horizontal line in the same field, and the regulation of the horizontal wire extends toward the height direction, imitating any friction line 182 to stabilize the liquid surface apex position.俾 establishing the horizontal line of the wet line WL ° thus 'the downstream side of the wet line WL such that the downstream side of the wet line WL is such that the film thickness d of the photoresist coating film RH on the substrate G is formed -23-129982 as desired値 is maintained _ at a certain level. Further, even when the viscous meniscus is easily formed by the type of the photoresist liquid used for the coating treatment, it is easy to form the wavy meniscus. According to the present embodiment, the upper portion of the photoresist is coated as described above. The horizontal wire function of 0 regulates the vertex position of the meniscus in a horizontal straight line. Thereby, the possibility that the striped coating mottle is generated on the photoresist coating film RM is greatly reduced. In the nozzle updating unit 1 24, a nozzle cleaning unit for cleaning the nozzle portion 156 of the photoresist nozzle 1 205 or a photoresist for discharging the nozzle in the photoresist nozzle 126 is provided, although not shown. The liquid is used to replace the dummy distribution part and the like. When the nozzle cleaning or the dummy dispensing is performed, the wet line underlayer treatment by the wet line underlayer processing unit 125 as described above may be performed thereafter. A modification of the wet-line underlayer processing unit 125 of the above-described embodiment is shown in Fig. 1 . In this modification, a concave portion 184 extending in parallel with the longitudinal direction of the nozzle is provided at a lower end portion of the front surface (main surface) of the coating pad 162. As shown in Fig. 1(A) and Fig. 11(B), in the illustrated example, the recess 184 is provided in each of the housing 166 and the spacer 168. According to this configuration, the coating pad 162 is pushed toward the lower end portion of the nozzle portion back surface 160, and the photoresist liquid oozing from the pad portion 168 is stored in the concave portion while sliding toward the nozzle longitudinal direction. In the state of 184, it adheres to the lower end part of the nozzle part back surface 160. As a result, as shown in Fig. 1(C), a liquid storage portion 186 of the photoresist liquid extending in the longitudinal direction of the nozzle is formed at the lower end portion of the nozzle portion back surface 160. When the next coating process is started in this state, the photoresist liquid discharged on the substrate G from the discharge port 15 2 of the photoresist nozzle 2 附着 is adhered to the back surface of the nozzle portion by the wetting phenomenon. The lower end portion of 1 60 is shortened in the height direction. Thereby, the start of the nozzle scanning can be accelerated. Fig. 1 is a view showing the configuration of a main portion of the wet-line underlayer processing unit 1 2 5 in the other embodiment. This embodiment uses a friction-specific friction pad 163 instead of the coating pad 162 which oozes the photoresist. It is not necessary to provide a flow path through the photoresist liquid in the support member 171 supporting the friction pad 163. Instead of placing the photoresist liquid, for example, the photoresist liquid supply portion 188 used for the lower end portion of the nozzle portion back surface 160 of the photoresist nozzle 120 is disposed on the upstream side in the sliding direction of the friction pad 163, and by the common linear drive portion 176 (6th) Fig.) The photoresist liquid imparting portion 188 and the friction pad 163 are driven in parallel in the longitudinal direction of the nozzle. The photoresist liquid supply portion 188 is a photoresist liquid supply portion that can be connected to the practical unit 172 (Fig. 6). Similarly to the coating pad 162 of the above-described embodiment, the friction pad 163 may be filled with a pad member made of a sponge-like substance or a porous substance, and first adhered to the nozzle by the photoresist liquid supply portion 188. The photoresist liquid on the back surface 160 of the portion is always slid while extending in the longitudinal direction of the nozzle. The surface of the friction pad 163 is pushed to the lower half of the nozzle portion back surface 160 at a predetermined pressure, and linearly and at a constant speed from one end to the other end of the resist nozzle 126 toward the nozzle length direction. Sliding is also possible. In this embodiment, after the friction pad 163 is passed through the lower half of the nozzle portion back portion 660, a plurality of or a plurality of friction trace lines including parallel and horizontally extending in the longitudinal direction of the nozzle are formed in the same manner as in the above-described embodiment. The photoresist liquid (not shown) is coated with the field 180. Therefore, in the photoresist nozzle 120, the wet line WL of the horizontal line can be stably established at the same time, and the photoresist coating film having a certain film thickness and no coating film can be formed on the substrate to be processed - 25 - 1299286 on. In the above embodiment, the wetting agent is used as the coating liquid applied to the lower end portion of the nozzle portion back surface 160 of the resist nozzle 120, but the photoresist may be diluted with a suitable solvent. A diluted photoresist made of liquid. The photoresist used in the wetted-line underlayer processing unit 125 is preferably the same as the photoresist used in the coating processing unit 1 22 . However, if the main component is the same, the composition ratio or concentration is somewhat different. Also. Further, in the above embodiment, the nozzle portion front surface 158 of the resist nozzle 126 and the nozzle portion back surface 160 are fixed, and the wet line underlayer treatment is applied only to the nozzle portion back surface 160 side of the single surface. However, in order to perform coating processing in nozzle scanning in both directions (X, direction, X + direction), the wet line underlayer treatment of the above embodiment may be applied to both surfaces 158, 160 of the nozzle portion 156. Further, in the one direction or the fixed type, a wet line underlayer treatment is also applied to the front surface of the nozzle portion 158 together with the nozzle portion back surface 160. Further, the friction wire 182 of the photoresist liquid coating upper portion 180 of the present invention is preferably extended horizontally in the longitudinal direction of the nozzle as in the above embodiment, but is inclined or extended in a straight line depending on the application (for example, the center portion) It is higher than the peripheral part.) It is also possible to extend the form. Further, in the wet line underlayer treatment, after the photoresist is applied to the back surface 160 of the nozzle portion, the nozzle back surface 160 is photographed using, for example, a photographing device such as a CCD camera to check whether or not the photoresist is not coated. When there is an uncoated portion, the nozzle is washed in a nozzle cleaning portion (not shown), and then the photoresist is applied to the nozzle portion back surface 1 60. The photographing device is configurable in or near the nozzle updating portion 124. With this inspection function and recoating function, the reliability of the 26-1299286 wet wire underlayer treatment is further improved, and the reliability of the coating film quality can be further improved. The above embodiment relates to a long type of coating nozzle having a slit-shaped discharge port, but the present invention is also applicable to a long type of discharge port having a plurality of fine holes arranged in the longitudinal direction of the nozzle. Coating the nozzle. Further, the above embodiment is a photoresist coating apparatus for a coating development processing system for LCD manufacturing, but the present invention is applicable to any application in which a coating liquid is supplied onto a substrate to be processed. The coating liquid of the present invention contains, in addition to the photoresist, various coating liquids such as an interlayer insulating material, a dielectric material, and a wiring material. The substrate to be processed of the present invention is not limited to the LCD substrate, and includes other substrates for flat panel display, semiconductor wafers, CD substrates, glass substrates, photomasks, printed substrates, and the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a configuration of an applicable coating development processing system of the present invention. Fig. 2 is a side view showing the configuration of a heat treatment portion of the coating development processing system of the embodiment. Fig. 3 is a flow chart showing the processing procedure of the heat treatment unit of the coating development processing system of the embodiment. Fig. 4 is a plan view showing a configuration of a coating treatment unit of a heat treatment unit of the coating development processing system according to the embodiment. Fig. 5 is a view showing a configuration of a coating processing unit of a heat treatment unit of the coating development processing system according to the embodiment. _ -27 - 1299286 Fig. 6 is a perspective view showing the configuration of the appearance of the photoresist nozzle and the configuration of the wet-line underlayer processing portion in the embodiment. Fig. 7 is a cross-sectional view showing the configuration of a main portion of a photoresist nozzle and a configuration of a main portion of a wet-line underlayer processing portion in an embodiment. Fig. 8 is a side view schematically showing the action of the wet-line underlayer processing portion of the embodiment. Fig. 9 is a cross-sectional view showing the effect of the wet-line underlayer treatment of the embodiment. Fig. 1 is a perspective view showing the effect of the wet-line underlayer treatment of the embodiment. Fig. 1 is a perspective view showing the configuration and operation of a main portion of a wet-line underlayer treatment portion due to a modification. Fig. 2 is a perspective view showing the configuration and operation of a main portion of the wet-line underlayer treatment portion due to another embodiment. Fig. 1 is a perspective view showing the appearance and function of a conventional slit type photoresist nozzle. [Description of main component symbols] 1 6 : Processing station 28 : Coating processing section 82 : Photoresist coating unit (CT) 1 1 8 : Workbench 120 : Photoresist nozzle 28 - 1299286 122 : Coating processing section 125 : Wet Line bottom layer processing unit 1 50: nozzle body 1 5 2 : discharge port 1 5 6 : nozzle portion 1 5 8 : nozzle portion front surface 160: nozzle portion back surface
1 6 2 ;塗佈墊 1 6 3 :摩擦墊 1 6 8 :墊構件 170 :支持管 1 7 1 :支持構件 172 :實用單元 176 :直進驅動部 184 :凹部1 6 2 ; coating pad 1 6 3 : friction pad 1 6 8 : pad member 170 : support tube 1 7 1 : support member 172 : utility unit 176 : straight drive unit 184 : recess
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