TWI295819B - A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics - Google Patents

A method of producing substrates or components on substrates involving transfer of a useful layer, for microelectronics, optoelectronics, or optics Download PDF

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Publication number
TWI295819B
TWI295819B TW093106789A TW93106789A TWI295819B TW I295819 B TWI295819 B TW I295819B TW 093106789 A TW093106789 A TW 093106789A TW 93106789 A TW93106789 A TW 93106789A TW I295819 B TWI295819 B TW I295819B
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layer
support
interface
active layer
separable
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TW093106789A
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TW200507086A (en
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Fabrice Letertre
Olivier Rayssac
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Soitec Silicon On Insulator
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)

Description

A7 1295819 B7 五、發明說明（1 ) 發明所屬之技術領域 本發明概與製造供微電子、光電或光學用之基板 之方法有關’其中包含一有效層之自第一支標體轉 移至第二支撐體。 先前技術 爾來已發展出各種半導體材料層機械轉移技術一不論已 接受自笫一支樓體至第二支撐體之成份生產處理均可。 採用可由化學侵襲之埋入多孔層之技術，諸如歐洲專利 ΕΡ-Α-0 849 788中所述，特別在此引述之。 亦提及藉由佈植氣體種源將基板弱化，藉以藉由佈值區 之斷裂而將薄的有效層自材料殘餘物分離。 最終，亦述及鍵結能量受控之分子鍵結技術使得機械力 可造成已暫時鍵結於支撐體之層之分離。 ‘利用上述技術之一將有效層連結第一支稽體時，層之 轉移包含利用適當鍵結力使第二支撐體與有效層之自由面相 接，其中已知包含該層與該第一支撐體在内之組成之自由面 為”前，，面。 經濟部智慧財產局員工消費合作社印製 0 5 0 112 藉由在被轉移層與第一支撐體間施加應力（一般為張力 及/或彎曲及/或剪力）而完成轉移，其採用橫向引人弱化介 面處使裂縫散佈之一或多種器具如割劃鑽架或刀刃，或者藉 由施加液體噴射於該弱化介面（實例見於法國專利fr_a_2 796 491)。 當被轉移之有效層尚未歷經任何部件製造步驟時，則概 略施行該轉移，不管用賴定有效層於第二支撑體之鍵結技 本紙張尺度義巾_家標i^S)A4祕（210 X 297公楚)~ 1295819 A7A7 1295819 B7 V. OBJECTS OF THE INVENTION (1) FIELD OF THE INVENTION The present invention relates generally to a method of manufacturing a substrate for microelectronics, optoelectronics or optics, wherein the transfer from the first support to the second comprises an active layer Support body. Prior Art Already, various mechanical transfer techniques for semiconductor material layers have been developed, regardless of whether the composition of the building from the first building to the second supporting body has been accepted. Techniques for embedding a porous layer by chemical attack, such as those described in European Patent ΕΡ-Α-0 849 788, are specifically incorporated herein by reference. It is also mentioned that the substrate is weakened by the source of the planting gas, whereby the thin active layer is separated from the material residue by the breaking of the cloth value region. Finally, the molecular bonding technique controlled by the bonding energy is also described so that the mechanical force can cause separation of the layer that has been temporarily bonded to the support. When one of the above techniques is used to join the active layer to the first body, the transfer of the layer includes contacting the second support with the free face of the active layer by a suitable bonding force, wherein the layer is known to comprise the layer and the first support The free face of the composition is "front, face. Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 0 5 0 112 by applying stress between the transferred layer and the first support (generally tension and / or bending And/or shearing) to complete the transfer, which uses a laterally weakened interface to spread one or more of the cracks, such as a drill rig or blade, or by applying a liquid spray to the weakened interface (examples are found in French patent fr_a_2 796 491). When the effective layer to be transferred has not undergone any component manufacturing steps, the transfer is performed roughly, regardless of the bonding of the effective layer to the second support, the paper size scarf _ _ i i ) A4 secret (210 X 297 public Chu) ~ 1295819 A7

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5 1A 經濟部智慧財產局員工消費合作社印製 20 ▲為何（尤其為分子鍵結、合金鍵結、使用聚合物或樹脂之 鍵結等）。 才主對地，當有效層已歷經部件製造步驟時問題相異，在 下’常需施行不同麵沉積（明質或異質蟲晶形成 體氧化物或氮化物、多晶半導體、非晶 +導體）。 且右^例如於特定反應器中施行’全晶圓，方法時，該沉積物 ^ ^或％全覆盍有效層之自由面及溢流至暫時固定於第 支標體之該有效層組成之基板之側面上。 盥#、、、L覆皿產生多少被包覆之有效層，主要結果被有效層 =弟支撐體間之鍵結之週翻化，導致_為將該有效層 轉移至其第二支撐體所需之分料胃。 發明内容 本發明目的在克服上述缺點。 至此，在第一態樣中，本發明提供一種將一單晶 材料之有效層自―第—支撐體轉移至-第二支揮體 之方法，用以製造微電子、光電或光學之或 板上部件，包括下列步驟： 次基 , 形成一包括該第一支撐體及至少-部份該有效層之 第一基板，該第-支撐體與該有效制具有—可分離介二， 該有效層之外緣向内與該第_支撐體之外緣相間； 於4有效層上形成一材料之沉積層，該沉積層 以至少部份橫向覆蓋該可分離介面； 局部移除支制材料及/或沉積讀料，俾使該可分 -4- 77 本紙張尺度適用中國國家標準(CNS)A4規袼（210x297公釐） A7 1295819 B7 •五、發明說明（3 ) 離界面露出； • 固定該有效層之一曝露面於一第二支撐體；以及 • 導致該第一支撐體與該有效層間之該可分離介面處 之分離，該可分離介面之該曝露區促進該分離。 5 以下所列較佳，但不以之限制本方法之特徵： -材料移除步驟包括移除橫向覆蓋該介面之該沉 積材料之週邊區。 -藉由切割達成材料移除步驟。 -藉由蝕刻達成該材料移除步驟。 10 -藉由罩住在該週邊區内之·該有效層而施行蝕 刻。 -材料移除步驟亦包括至少將在該沉積材料週邊 區下方之該第一支撐體之一部分移除。 -材料移除步驟包括在該沉積之前，自形成該沉 15 積材料週邊區之區域中之該第一支撐體移除該材料 週邊區。 經濟部智慧財產局員工消費合作社印製 -來自該第一支撐體之該材料週邊區為一週邊凹 處，其於該有效層之側邊橫向且正面地開啟。 -凹處之深度大於或等於該沉積材料週邊區之厚 20 度。 -凹處之寬度使其大體上覆蓋該第一支撐體之外 緣與該有效層之外緣間之距離。 -自該第一支撐體移除一週邊區之步驟係在該第 一支撐體上形成該有效層後施行。 本紙張尺度適用中國國家標準(CNS)A4規格（210x297公釐） 1295819 B7 五、發明說明（4) -利用一分離工具於該可分離介面疼施加橫向應 力而施行該分離步驟。 -該材料移除步驟包括在固定該有效層之該曝露 面於該第二支撐體前，在該有效層之該曝露面與該 5 可分離介面之區域間形成隔離通道。 -該等通道界定個別島狀物。 -利用一選自由鋸切割、雷射切割、離子束切割 及加罩化學蝕刻構成之群中之技術形成該等通道。 -利用一可施加於該第一與該第二支撐體間之分 10 離工具；一或多個選自由張力、彎曲及剪力應力構 成之群中之應力施行該分離步驟。 -沉積材料層係由”全晶圓”磊晶形成。 -有效層包括一由一供蠢晶長成用之晶種形成之 層以及一或多層系晶長成層。 15 -晶種層之材料係選自由碳化矽、藍寶石、氮化 鎵、石夕及氮化銘構成之群中。 -磊晶長成層係由一或多種金屬氮化物構成。 經濟部智慧財產局員工消費合作社印製 -第一支撐體之材料係選自由半導體、半導體碳 化物及絕緣體如藍寶石構成之群中。 20 -可分離介面係利用一選自由佈植氣體種源；形 成一可為化學侵襲之多孔層；及具有鍵結力之控制 之分子鍵結之鍵結構成之群中之技術形成。 在本發明之第二態樣中，本發明提供一種用以製 造微電子、光電或光學之基板或基板上部件之支撐‘ -6- 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） 1295819五、發明說明（ A7 B7 5 105 1A Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 20 ▲Why (especially for molecular bonding, alloy bonding, bonding with polymers or resins, etc.). Only when the main layer is on the ground, when the effective layer has been subjected to the manufacturing steps of the parts, the problem is different. In the lower part, it is often necessary to perform different surface deposition (amorphous or heterogeneous crystal oxide oxide or nitride, polycrystalline semiconductor, amorphous + conductor) . And right ^, for example, in a specific reactor, the 'full wafer, method, the deposit ^ ^ or % full coverage of the free surface of the active layer and overflow to the effective layer temporarily fixed to the first target On the side of the substrate.盥#,,,L The number of coated effective layers produced by the crust, the main result being turned over by the bond between the effective layer and the support, resulting in the transfer of the active layer to its second support. Need to divide the stomach. SUMMARY OF THE INVENTION The object of the present invention is to overcome the above disadvantages. So far, in the first aspect, the present invention provides a method for transferring an effective layer of a single crystal material from a "first support" to a second support for manufacturing microelectronic, optoelectronic or optical or plate The upper part comprises the following steps: a sub-base, forming a first substrate comprising the first support body and at least a part of the active layer, the first support body and the active system having a separable dielectric layer The outer edge is inwardly spaced from the outer edge of the first support; a deposited layer of material is formed on the active layer, the deposited layer covers the separable interface at least partially laterally; the support material is partially removed and/or Or deposit the reading material, so that the separable - 77 paper scale applies to the Chinese National Standard (CNS) A4 gauge (210x297 mm) A7 1295819 B7 • V. Description of the invention (3) exposed from the interface; • Fix the One of the active layers is exposed to a second support; and • causes separation of the separable interface between the first support and the active layer, the exposed area of the separable interface facilitating the separation. 5 The following list is preferred but does not limit the features of the method: - The material removal step includes removing the peripheral region of the deposited material that laterally covers the interface. - A material removal step is achieved by cutting. - the material removal step is achieved by etching. 10 - etching is performed by covering the active layer in the peripheral region. The material removal step also includes removing at least a portion of the first support below the peripheral region of the deposited material. The material removal step includes removing the material peripheral region from the first support in the region forming the peripheral region of the deposited material prior to the depositing. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the consumer consortium - the peripheral zone of the material from the first support is a peripheral recess that opens laterally and positively on the sides of the active layer. The depth of the recess is greater than or equal to 20 degrees thicker than the peripheral region of the deposited material. The width of the recess is such that it substantially covers the distance between the outer edge of the first support and the outer edge of the active layer. - the step of removing a peripheral zone from the first support is performed after forming the active layer on the first support. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210x297 mm). 1295819 B7 V. INSTRUCTION DESCRIPTION (4) - This separation step is carried out by applying a lateral force to the separable interface with a separation tool. - the material removal step includes forming an isolation channel between the exposed face of the active layer and the region of the 5 separable interface before the exposed face of the active layer is secured to the second support. - These channels define individual islands. - forming the channels by a technique selected from the group consisting of saw cutting, laser cutting, ion beam cutting, and chemical etching. - performing the separation step using a separate application tool that can be applied between the first and second support bodies; one or more stresses selected from the group consisting of tensile, bending and shear stresses. - The layer of deposited material is formed by "full wafer" epitaxy. The active layer comprises a layer formed of a seed crystal for the growth of the stray crystal and one or more layers of the crystal growth. The material of the 15 - seed layer is selected from the group consisting of tantalum carbide, sapphire, gallium nitride, shixi and nitriding. The epitaxial growth layer is composed of one or more metal nitrides. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Consortium - The material of the first support is selected from the group consisting of semiconductors, semiconductor carbides and insulators such as sapphire. The 20-separable interface is formed by a technique selected from the group consisting of a source of implanted gas; a porous layer which is chemically attackable; and a bond structure having a molecular bond controlled by a bonding force. In a second aspect of the invention, the invention provides a support for manufacturing microelectronic, optoelectronic or optical substrates or components on a substrate. -6- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1295819 V. Description of the invention (A7 B7 5 10

5 IX 經濟部智慧財產局員工消費合作社印製 20 體，其可接收至少—有效層之一itp /,ν ^ 4r ^ ^伤该支撐體與 該有效層間具有-可分離介面，其中在該有效展上 之-材料層沉積可形成—沉積#㈣邊區，其二少 部分橫向覆蓋該介面，該支抑包括—適於收置ζ 沉積材料週邊區之凹陷區，致使該介面橫向露出： 分離之用。 實施方式 首先參閱圖1與2，自半導體材料如碳化碎Sic、單或 多晶矽等；或自絕緣材料如藍寶石形成第一支撐體1〇。/ 於該第-支撐體上形成或沉積_層12並形成可釋放之 鍵結介面；一般可為一層半導體氧化物如Si〇2、半導性氮 化物等。 層12構成第一支撐體1〇與有效層間之可釋放鍵結介 面，在此例中之有效層係由基底層14構成，其上已形成或 沉積層16。 4又而a ’基底層14係一晶種層，於其上藉由 蠢晶形成層16。此晶種層係由例如碳化碎、藍寶石、氮化 鎵、石夕或氮化鋁形成。 在一實施例中，基底層14係由SiC形成，同時磊晶長 成層係由金屬氮化物如氮化鎵GaN或不同金屬氮化物之堆 疊形成。 此一有效層結構在製造發光二極體（LED)上尤見其 功。 如圖1所見，在習知方法中，第一支撐體略大於在該支 撐體上形成之層12、14與16。藉由磊晶沉積層16，一般 -7- 本紙張尺度適用中國國家標準(CNS)A4規格（210 χ297公釐） 12958195 IX Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints 20 bodies, which can receive at least one of the effective layers itp /, ν ^ 4r ^ ^, the support and the effective layer have a - separable interface, where the effective The material layer deposition can form a -deposition #(4) edge region, the second portion of which covers the interface laterally, and the support includes a recessed region adapted to receive the peripheral region of the 沉积 deposition material, such that the interface is exposed laterally: use. Embodiments Referring first to Figures 1 and 2, a first support 1 is formed from a semiconductor material such as carbonized Sic, single or polycrystalline germanium, or from an insulating material such as sapphire. Forming or depositing a layer 12 on the first support and forming a releasable bonding interface; typically a layer of a semiconductor oxide such as Si 〇 2, a semiconducting nitride or the like. Layer 12 constitutes a releasable bonding interface between the first support 1 and the active layer, in this case the active layer consists of a base layer 14 on which layer 16 has been formed or deposited. 4 and the a' substrate layer 14 is a seed layer on which the layer 16 is formed by stupid crystals. This seed layer is formed of, for example, carbonized sap, sapphire, gallium nitride, stellite or aluminum nitride. In one embodiment, the base layer 14 is formed of SiC while the epitaxial growth layer is formed by stacking metal nitrides such as gallium nitride GaN or different metal nitrides. This effective layer structure is particularly useful in the manufacture of light-emitting diodes (LEDs). As seen in Fig. 1, in the conventional method, the first support is slightly larger than the layers 12, 14 and 16 formed on the support. By epitaxial deposition layer 16, generally -7- This paper scale applies to China National Standard (CNS) A4 specification (210 χ 297 mm) 1295819

5 o 11 5 經濟部智慧財產局員工消費合作社印製 20 係於全晶圓，，反應器中施行，如此不僅延伸於晶種層14 上，亦圍繞-環161，覆蓋支撐體1〇之凹陷週邊。 圖2闡釋圖1中所示名為第—基板之組成之固定於第二 支撐體20。在此财，個金胁結技術施行固定；_ 層以22表之。 在如上述固定後，將有效層14、16自第一支撐體 轉移至第二支撐體2Q，尤其是可施加應力於有效層 14、16與第-支撐體1Q間介面層12之分離器具，俾將該 介面之平面中的分離散佈。 但圖2顯示沉積之GaN環161導致與此操作有關之兩 問題：第-，其強化有效層14、16與第—支撐體間在第一 支撐體週邊處之鍵結；其次·，其造成無法直接以分離器具 (薄刀刃、液體噴射等）進入鍵結介面12 ,於該處施加所 需之分離應力（圖3a中之箭號F1)。 以下描述數種解決這些問題之方法。第一解法示如圖3a。其係藉由移除環161而組成。 在第一實施例中，可以蝕刻施行該移除。至此，於有效 層14、16之自由面上產生一罩，該罩將僅釋放環161。接 著採用適於侵襲與移除整個環厚度之環材料侵襲媒介，俾分 離可分離之介面層12。在本例中，由於環係GaN，故下列 施行較佳：電漿蝕刻或基於SiCU、BCI3之RE (反應離子 餘刻）（參閱 S J Pearton 等人在 Journal of Applied Physics, vol86, no1, 1st July 1999 之文件”GaN: Processing， Defects and Devices”）。 本紙張尺度適用中國國家標準(CNS)A4規格（210x297公釐） 1295819 A75 o 11 5 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 20 series on the whole wafer, in the reactor, so that it extends not only on the seed layer 14, but also around the ring 161, covering the depression of the support body 1 Surroundings. Fig. 2 illustrates the fixing of the composition of the first substrate shown in Fig. 1 to the second support body 20. In this fiscal, a gold threatening technology is fixed; _ layer is 22. After being fixed as described above, the active layers 14, 16 are transferred from the first support to the second support 2Q, in particular, a separating means for applying stress to the interface layer 12 between the active layers 14, 16 and the first support 1Q,散 Spread the separation in the plane of the interface. However, Figure 2 shows that the deposited GaN ring 161 causes two problems associated with this operation: first, which strengthens the bond between the active layer 14, 16 and the first support at the periphery of the first support; secondly, it causes It is not possible to directly enter the bonding interface 12 with a separating device (thin blade, liquid jet, etc.) where the required separation stress (arrow F1 in Fig. 3a) is applied. The following describes several ways to solve these problems. The first solution is shown in Figure 3a. It consists of removing the ring 161. In the first embodiment, the removal can be performed by etching. To this end, a cover is created on the free faces of the active layers 14, 16 which will only release the ring 161. The detachable interface layer 12 is then separated by a ring material that is adapted to invade and remove the entire ring thickness. In this case, due to the ring-based GaN, the following is preferred: plasma etching or RE based on SiCU, BCI3 (reactive ion remnant) (see SJ Pearton et al. in Journal of Applied Physics, vol86, no1, 1st July) 1999 file "GaN: Processing, Defects and Devices"). This paper size applies to the Chinese National Standard (CNS) A4 specification (210x297 mm) 1295819 A7

在一變異版本中，可採用其它餘刻技術如電漿银刻。 在第二實施例中，利用切割或修剪技術移除環。可採用 機械鑛切馳術、雷射蝴技術或離子束切割技術。如所將 知，藉由產生圓柱形之旋轉切割以及在環161與第一支標 體10間之過渡平面中之切割將環移徐。 ^ ”20 經濟部智慧財產局員工消費合作社印製 在所有情況T ’均需注驗顧_提供對可分離介面 層12之適當進入，俾利轉移有效層。應注意在此觀點中， 僅部份移除環161即足以侵人第：支撐體1Q與有效層 14、16間之週邊鍵結’並使分離器具得以正確運作。相對 地，可移除環161同時亦穿透支撐體本身。 在-變異版本中’如圖3b所示，施行切割穿越整個第 一基板厚度，俾不僅移除干擾環161,亦移除與該處相鄰之 第一支撐體之部位101。此變異版本在不易控制切割技術之 工作深度下更為適用。 在第二支撐體20已固定於有效層14、16前移除環 161較佳。但若用以移除環161之技術允許，則可於固定 後▲行。· 用以克服週邊沉積161導致之問題之另一方法示如圖 4。其係利用特地製備以包含週邊凹處1Q2之第一支擇體 10組成。 優點在於該週邊凹處於支撐體10之外緣與介面層12 及有效層14、16支外緣間之徑向延伸（圖4水平方向）。 在轴向（垂直於圖4)上，該凹處102較佳延伸至少等於所 形成之沉積物16厚度之深度（d)，使得沉積操作末了，其. 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） 1295819 A7In a variant version, other residual techniques such as plasma silver engraving may be employed. In a second embodiment, the loop is removed using a cutting or trimming technique. Mechanical ore cutting, laser butterfly or ion beam cutting techniques can be used. As will be appreciated, the ring is moved by creating a cylindrical rotational cut and a cut in the transition plane between the ring 161 and the first sub-body 10. ^ ” 20 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed in all cases T 'all need to check _ provide appropriate access to the detachable interface layer 12, profit transfer effective layer. Should pay attention to this view, only The portion of the removal ring 161 is sufficient to invade the periphery: the peripheral bond between the support 1Q and the active layers 14, 16 and allows the separation device to function properly. In contrast, the removable ring 161 also penetrates the support itself. In the variant version, as shown in Fig. 3b, the cutting is performed across the entire thickness of the first substrate, and the not only the interference ring 161 is removed, but also the portion 101 of the first support adjacent thereto is removed. It is more suitable to control the working depth of the cutting technique. It is preferable to remove the ring 161 before the second support 20 has been fixed to the active layers 14, 16. However, if the technique for removing the ring 161 permits, it can be fixed. Next ▲ line. Another method for overcoming the problems caused by the peripheral deposition 161 is shown in Fig. 4. It is specially constructed by using the first support body 10 including the peripheral recess 1Q2. The advantage is that the peripheral concave is in the support Body 10 outer edge and interface layer 12 And the radial extension between the outer edges of the active layers 14, 16 (horizontal direction of Figure 4). In the axial direction (perpendicular to Figure 4), the recess 102 preferably extends at least equal to the depth of the thickness of the deposited deposit 16 (d), so that the deposition operation is finished, the paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1295819 A7

ii

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1295819 A7 五、發明說明（ 10 15 經濟部智慧財產局員工消費合作社印製 ’抽易見’本發明咖於極廣泛之半導體材料。本發明 除了適用於上述在絕緣體上之碳化發（sjc〇丨）上長成之氮 化物層之實例外，例如在轉移卿為基之有效層時，並中特 定方法已利用CMOS技術於第二絕緣支撐體1〇上製造部 件。許多其他應用亦適用之。 ▲在此觀點下，熟諳此藝者將易於選擇適合所採用材料功 此之解法（選擇所述二方法之_、選撕鄉除類型等）。 最終’可見可將上述本發明之三方法合併施行。圖式簡單說明自上揭以非限制性實例所述本發明參閱隨附圖式，即可明瞭本發明之其他態樣二^ 及優點，其中·· 、J 可，其中： 圖1係具第-支撐體與有效層之第一基板之剖面圖； 圖2係為轉移第-基板之有效層而固定於第一基板之第 二支撐體之剖面圖； 圖3係闡釋工作區之自分離器具分離之剖面圖； 圖4係闡釋分離器具之第一支撐體之特殊配θ 板之剖面圖；及 置之第一基 20 圖5及圖6係用以達成進入有效層與第_支待體門介面之 有效層之特殊配置之剖面與平面圖。圖式之代號說明1〇第一支撐體 12介面層 -11 - 本紙張尺度適用中國國家標準(CNS)A4規格（210x297公釐） A7 經濟部智慧財產局員工消費合作社印製 1295819 B7 五、發明說明（1〇) 14有效層 16有效層 18通道 19瓦狀物 20第二支撐體 22鍵結層 101部位 102週邊凹處 161環 F1分離應力 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐）1295819 A7 V. INSTRUCTIONS (10 15 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives, 'Easy to See' The present invention is widely used in semiconductor materials. The present invention is applicable to the above-mentioned carbonization on insulators (sjc〇丨) In addition to the examples of the nitride layer that has been grown, for example, in the case of a transfer-based active layer, a specific method has used CMOS technology to fabricate a component on the second insulating support 1 . Many other applications are also applicable. ▲ In this view, those skilled in the art will be able to easily select a solution that is suitable for the materials used (choose the two methods, select the type of the method, etc.). Finally, it can be seen that the above three methods of the present invention can be combined. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be described by way of non-limiting example only with reference to the accompanying drawings in which FIG. 1 is a cross-sectional view of a first substrate having a first support and an active layer; FIG. 2 is a cross-sectional view of a second support fixed to the first substrate by transferring an active layer of the first substrate; FIG. 3 is a self-division of the working area Figure 4 is a cross-sectional view showing the special θ plate of the first support of the separating device; and the first base 20; Figure 5 and Figure 6 are used to achieve the entry into the effective layer and the Sectional and plan view of the special configuration of the effective layer of the body door interface. Code description of the figure 1〇First support body 12 interface layer-11 - This paper scale applies to China National Standard (CNS) A4 specification (210x297 mm) A7 Economy Ministry of Intellectual Property Bureau employee consumption cooperative printed 1295819 B7 V. Invention description (1〇) 14 effective layer 16 effective layer 18 channel 19 watts 20 second support body 22 bonding layer 101 part 102 surrounding recess 161 ring F1 separation The stress paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

Claims (1)

'中請專利範圍 A8 專利申請案第93106789號 B8 ROC Patent Appln. No. 93106789 p修正後無劃線之中文申請專利範圍替換本—附件（二） __Amended Claims in Chinese - Enel.(II) (民國96年11月27曰送呈） (Submitted on November 27, 2007) 經濟部智慧財產局員工消費合作社印製 1· 一種將一單晶材料之有效層自一第一支撐體轉移至 一第二支撐體之方法，用以製造微電子、光電或光學之基板 或基板上部件，該方法包括下列步驟： •形成一包括該第一支撐體及至少一部份該有效層之 第一基板，該第一支撐體與該有效層間具有一可 分離介面，該有效層之外緣向内與該第一支樓體 之外緣相間； •於該有效層上形成一材料之沉積層，該沉積層可用 以至少部份橫向覆蓋該可分離介面； •局部移除支撐體材料及/或沉積之材料，俾使該可分 離界面露出； •固定該有效層之一曝露面於一第二支撐體；以及 •導致該第-支频與該有效層間之該可分離介面處 之分離’該可分離介Φ之轉露區促進該分離。 2·如申請專利範圍第Μ之方法，其中該材料移除步 驟包括移除橫向覆蓋該介面之該沉積材料之週邊區。 3.如中請專利範圍第2項之方法，其中藉由切割達成 孩材料移除步驟。 《如巾請專利範圍第2項之方法，其帽由 該材料移除步驟。 咬乂 週邊1蝴_顚第3奴方法，其帽由軍住在該 0邊區内之該有效層而施行餘刻。驟亦1 如巾請專利範圍第2項之方法，其中該材料移除步 匕至少將在該沉積材料週邊區下方之該第—支撐體之 __ -13- 本紙張尺度⑵gx297：^ 10 15 20 93121·0Α1_申復-附件2 4 訂 消 j2958l9 六、申請專利 範圍 5 10 15 20 一部分移除。 驟包括在該1二“:第1項之方法，其中該材料移除步 該第-支揮體移除該材料沉積材料週邊區之區域中之 8.如申請專利範圍第如 來 撐體之該材料週邊r术目4弟一支 向及正面地開^ °邊⑽，其於财效層之側邊橫 ^專利範圍第8項之方法，其中該凹處之深度 ⑷大於或雜觀積材料週雜之厚度。 Ί〇·如申請專利範圍第8項之 使其大體JL龍該第_支，$ 〃之見度 距離。 找體之外緣與該有效層之外緣間之 11.如申凊專利範圍第7項之方法，其中自該第一支撐 體移除-週邊區之步驟係在該第_讀體上形成該有效 施行。 θ 12·如申請專利範圍第項中任一項之方法， 利用-分離工具於該可分齡面處施加橫向應力而心 離步驟。 。 13.如申請專利範圍第12項之方法，其中該材料移除步 驟包括在固定該有效層之該曝露面於該第二支撐體前，在該 有效層之該_面無可分離介面之區朗形成隔離通道。 14_如申請專利範圍第13項之方法，其中該等通道界定 個別島狀物。 ^ &lt; 15·如申請專利範圍第13項之方法，其中利用—選自 -14 - 訂 本紙張尺度適用中國國家標準(CNS)A4規格（210 χ 297公釐） 1295819 六、申請專利範圍 A8 B8 C8 D8 5 10 15 經濟部智慧財產局員X消費合作社印製 20 錄切割、雷射切割、離子束切割及加罩化學姓刻構成之群中 之技術形成該等通道。 16·如申請專利範圍第13項之方法，其中.利用一可施加 於該第一與該第二支撐體間之分離工具；一或多個選自由張 力、％曲及剪力應力構成之群中之應力施行該分離步驟。 17_如申請專利範圍第1至11項中任一項之方法，其中 該沉積材料層係由”全晶圓”磊晶形成。 18_如申請專利範圍第17項之方法，其中該有效層包括 一由一供磊晶長成用之晶種形成之層以及一或多層磊晶長成 層。 19·如申請專利範圍第18項之方法，其中該晶種層之材 料係選自由碳化石夕、藍寶石、氮化鎵、石夕及氮化銘構成之群 中。 乂 20.如申請專利範圍第19項之方法，其中該蟲晶長成層 係由一或多種金屬氮化物構成。 21_如申請專利範圍第1至11項中任一項之方法，其中 4第-支#體之材料係選自由半導體、半導體碳化物及絕緣 體如藍寶石構成之群中。 22_如申请專利範圍第1至11項中任一項之方法，其中 ^可分離介面係彻_選自由佈植氣體種源，形成—可為化 T侵襲之纽層，及具有繼力之控狀分子_之鍵結構 成之群中之技術形成。 23—麵以製造微電子、光電或光學之基板或基板上 σ之支碰，討接收至少—有效層之—部份，該支樓體 -15 _ 本紙張尺錢帛 4 訂 經濟部智慧財產局員工消費合作社印製 A8 1295819 bs C8 _D8_ 六、申請專利範圍 與該有效層間具有一可分離介面，其中在該有效層上之一材 料層沉積可形成一沉積材料週邊區，其至少部分橫向覆蓋該 介面，該支撐體包括一適於收置該沉積材料週邊區之凹陷 區，致使該介面橫向露出供分離之用。 6 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐）' 中 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利Submitted on November 27, 1996) (Submitted on November 27, 2007) Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. 1. Transfer an effective layer of a single crystal material from a first support to a second support. a method for fabricating a microelectronic, optoelectronic or optical substrate or substrate component, the method comprising the steps of: • forming a first substrate comprising the first support and at least a portion of the active layer, the first The support body and the active layer have a separable interface, and the outer edge of the effective layer is inwardly spaced from the outer edge of the first branch body; • a deposited layer of material is formed on the active layer, and the deposited layer can be used At least partially laterally covering the separable interface; • partially removing the support material and/or deposited material to expose the separable interface; and fixing one of the active layers to expose the second surface Supporting body; and • cause the second - branched frequency separation of the separable at the interface between the active layer of 'the separable via rotation Φ of the exposed region to promote separation. 2. The method of claim </RTI> wherein the material removal step comprises removing a peripheral region of the deposited material laterally covering the interface. 3. The method of claim 2, wherein the child material removal step is achieved by cutting. The method of removing the cap from the material is as described in the method of claim 2 of the patent application. Bite 乂 周边 周边 周边 蝴 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚 顚The method of claim 2, wherein the material removal step is at least __ -13 of the first support below the peripheral region of the deposited material (2) gx297: ^ 10 15 20 93121·0Α1_申复-Attachment 2 4 Ordering j2958l9 VI. Patent application scope 5 10 15 20 Partially removed. The method of claim 1, wherein the material removal step is performed by removing the peripheral region of the material deposition material from the first-volume removal body. The periphery of the material is the same as that of the side of the financial effect layer. The depth of the recess (4) is greater than or the material of the hybrid material. The thickness of the week. Ί〇·If you apply for the scope of the patent item 8 to make it the general JL dragon, the _ branch, the 〃 visibility distance. Find the outer edge of the body and the outer edge of the effective layer. The method of claim 7, wherein the step of removing the peripheral region from the first support forms the effective execution on the first read body. θ 12 · as in any one of the claims The method of applying a lateral stress to the separable face by the separation tool. The method of claim 12, wherein the material removal step comprises the exposing the exposure to the active layer Formed in front of the second support body, formed on the surface of the active layer without the separable interface 14_ The method of claim 13, wherein the channels define individual islands. ^ &lt; 15 · The method of claim 13 wherein the utilization - selected from -14 - the book Paper scale applies to China National Standard (CNS) A4 specification (210 297 297 mm) 1295819 VI. Patent application scope A8 B8 C8 D8 5 10 15 Ministry of Economic Affairs Intellectual Property Officer X Consumer Cooperative Printed 20 Recording, laser cutting, ion The technique of forming a channel in the group of the beam-cutting and capping chemical formations. The method of claim 13, wherein the method of applying a separation between the first and the second support is utilized. The method of performing one or more of the stresses selected from the group consisting of the tension, the % curvature, and the shear stress. The method of any one of claims 1 to 11, wherein the layer of deposited material The method of claim 11, wherein the active layer comprises a layer formed by a seed crystal for epitaxial growth and one or more epitaxial lengths. Layering. 19·Ru The method of claim 18, wherein the material of the seed layer is selected from the group consisting of carbon carbide, sapphire, gallium nitride, shixi and nitriding. 乂20. The method of the invention, wherein the crystal growth layer is composed of one or more metal nitrides. The method of any one of claims 1 to 11, wherein the material of the fourth body is selected from the group consisting of semiconductors. The method of any one of the first to eleventh aspects of the invention, wherein the method of any one of the first to eleventh aspects of the invention, wherein the separation interface is selected from the source of the planting gas, can be formed. It is formed by the technology in the group of the T-invasion layer and the key structure of the control molecule. 23-face to make a microelectronic, optoelectronic or optical substrate or substrate σ bump, to receive at least - the effective layer of the part, the branch body -15 _ this paper ruler 帛 4 set the Ministry of Economics intellectual property Bureau employee consumption cooperative printing A8 1295819 bs C8 _D8_ VI. The patent application scope and the active layer have a separable interface, wherein a material layer deposition on the active layer can form a peripheral region of the deposition material, at least partially laterally covering The interface includes a recessed region adapted to receive a peripheral region of the deposited material such that the interface is laterally exposed for separation. 6 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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