TWI279290B - Polishing pad for electrochemical-mechanical polishing - Google Patents

Polishing pad for electrochemical-mechanical polishing Download PDF

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Publication number
TWI279290B
TWI279290B TW93116251A TW93116251A TWI279290B TW I279290 B TWI279290 B TW I279290B TW 93116251 A TW93116251 A TW 93116251A TW 93116251 A TW93116251 A TW 93116251A TW I279290 B TWI279290 B TW I279290B
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TW
Taiwan
Prior art keywords
polishing pad
grooves
set
polishing
substrate
Prior art date
Application number
TW93116251A
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Chinese (zh)
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TW200510124A (en
Inventor
Roland K Sevilla
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Cabot Microelectronics Corp
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Publication date
Priority to US10/601,601 priority Critical patent/US20040259479A1/en
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200510124A publication Critical patent/TW200510124A/en
Application granted granted Critical
Publication of TWI279290B publication Critical patent/TWI279290B/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046Lapping machines or devices; Accessories designed for working plane surfaces using electric current

Abstract

The invention provides a polishing pad comprising a body having a top surface comprising a first set of grooves with a first depth and first width and a bottom surface comprising a second set of grooves with a second depth and second width, wherein the first set of grooves and second set of grooves are interconnected and are oriented such that they are not aligned.

Description

1279290 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a polishing crucible that can be used for electrochemical mechanical polishing. [Prior Art] The gastric glazing process can be used in the fabrication of electronic recording devices to form planes on semiconductor wafers, field emission displays, and many other microelectronic substrates. For example, fabrication of a semiconductor device generally includes forming a plurality of processing layers, selectively removing or patterning portions of the layers and depositing other processing layers on the surface of the semiconductor substrate to form a semiconductor wafer. For example, the handle layer can include an insulating layer, a gate oxide layer, a conductive layer, and a metal or glass layer. In a particular step of the wafer process, it is generally desirable that the uppermost layer of the processing layer be planar, i.e., flat for subsequent layers; redundancy. #光工艺如化工机械抛光("cmp is used in the planarization layer where deposited materials such as conductive or insulating materials are polished to planarize the wafer for subsequent processing steps. Electrical properties, which are increasingly being used to fabricate microelectronic devices. In the fabrication of copper substrate features, techniques such as damascene and dual damascene processes are currently used. In the damascene process, features are defined in the dielectric material, the barrier layer material It is deposited on the surface of the feature and then copper is deposited on the barrier layer and the surrounding field. This process causes excessive copper to deposit on the surface of the substrate and must be removed prior to subsequent processing (eg by polishing). The removal is challenged by the fact that the interface between the conductive material and the barrier layer is generally uneven. Residual copper can remain in the irregularities formed at non-planar interfaces. Removal of conductive and barrier materials from the substrate surface is often performed at different rates. Causes too much conductive material such as residue to remain on the base 93689.doc 1279290 Plate surface _L In addition, the substrate surface may have different The surface topography depends on the density or size of the features formed therein, and the table with different surface of the substrate also has a different copper removal rate. All of these characteristics make it difficult to achieve the planarity of effectively removing steel from the surface of the substrate and the surface of the final wire. The copper required on the surface of all the substrates can be removed by over-polishing the surface of the substrate. However, over-polishing can cause topographic defects such as characteristic depression or sinking ("shallow dishing) or excessive removal of dielectric materials (,, grinding Shallow disc and pure terrain defects may additionally cause the uneven layer to remove other layers, such as the barrier layer deposited under it. Using a low (eight) package g number (lower) material to form a copper mosaic on the surface of the substrate to form another The problem of polishing the copper surface. Low-fluid dielectric materials, such as carbon doped with cerium oxide, may deform or break under the pressure of conventional polishing (ie, 4 kPa), which can be used to polish the substrate quality and device formation. There is an adverse effect. For example, the relative rotational movement between the substrate and the polishing pad may cause a shear force along the surface of the substrate and deform the low-k material to form a topographical defect. A method of minimizing polishing defects in a substrate comprising copper and a low-k dielectric material is to polish the copper by electrochemical mechanical polishing (ECMP). Compared to conventional CMP processes, ECMP can be electrochemically dissolved while The substrate is polished at a lower mechanical polishing to remove conductive material from the surface of the substrate. Electrochemical dissolution is accomplished by applying a bias between the cathode and the surface of the substrate to remove conductive material from the surface of the wafer into the surrounding electrode or slurry. In a specific embodiment of an ECMP system, the biasing is applied by a substrate supporting device, such as a conductive contact of one of the substrate transport heads and the surface of the substrate. However, it has been observed that the contact ring is present on the surface of the substrate. Uneven current distribution phenomenon, causing dissolution 93689.doc 1279290, sentence uniform mechanical grinding by placing the substrate in contact with the conventional polishing crucible and 2 for relative movement between them. However, conventional polishing enamel often limits the flow of electrolysis to the surface of the substrate. Additionally, the polishing pad may be constructed of an insulating material that may interfere with the application of a bias voltage to the surface of the substrate and cause material to be uneven or variablely soluble from the surface of the substrate. As a result, a preferred polishing pad is needed to remove conductive material from the surface of the substrate during ECMP. The present invention provides such a polishing pad. These and other advantages of the present invention, as well as other features of the present invention, are apparent from the description of the invention. SUMMARY OF THE INVENTION The present invention provides a polishing crucible comprising: a body having a top surface and a bottom surface, wherein the top surface includes a first set of grooves and the bottom surface includes a second set of grooves, and first The set of grooves are interconnected with the second set of grooves and are oriented such that they are not in line. The invention further provides a method of electrochemical mechanical polishing comprising the use of a polishing pad. [Embodiment] The present invention relates to a polishing pad for electrochemical mechanical polishing (, ECMpn). The polishing pad includes a body having a top surface and a bottom surface. Both the top and bottom surfaces have grooves. The top surface includes a first set of grooves and the bottom surface includes a second set of grooves. This first group is interconnected with the second set of grooves. The first and second sets of grooves are preferably oriented relative to one another to provide a maximum electrolyte flow across the polishing pad body and to provide maximum uniformity of electrolyte flow throughout the polishing pad body. The grooves can have any suitable cross-sectional shape. For example, the cross-sectional shapes of the grooves of the first group and the second group 93689.doc -7- 1279290 may be by lines (such as parallel lines, χγ oblique parallel lines), curves, circles (like a circle of hearts), ovals, squares, It consists of a rectangle, a triangle, a diamond or a combination thereof. The cross-sectional shape of the first set of grooves may be the same or different from the cross-sectional shape of the second set of grooves. Moreover, the first set and the second set of grooves may each comprise a combination of different cross-sectional groove shapes. Preferably, at least one of the first set and the second set of grooves comprises a linear groove. Preferably, the first set and the second set of grooves comprise, consist essentially of or consist of linear grooves. The first group and the second group are oriented so that they are not in line. Therefore, the first group and the younger group should not overlap each other. If the first set and the second set of grooves occupy the same polishing pad plane, they should be oriented to intersect each other (e.g., intersect). The set of the first set of grooves and the particular position of the first set of grooves are at least partially dependent on the shape and number of grooves. For example, when the first set and the second set of grooves are comprised of linear grooves, the first set and the second set of grooves are oriented such that the lines are not parallel (e.g., oblique). Typically, the first set and the second set of grooves are oriented such that when viewed toward the top or bottom surface (i.e., the line of sight of the vertical top or bottom surface), the first set of grooves are rotated 10 relative to the second set of grooves. To 90. angle. Preferably, the first set of grooves are rotated 45 relative to the second set of grooves. To 90. Angle (such as 60. to 90.). This polishing pad is depicted in the figure and in the enamel. The polishing pad has a top surface (10) comprising a first set of grooves (12) and a bottom surface (14) comprising a second set of grooves, wherein the first set of grooves (12) are opposite to the second set of grooves (12) 16) The rotation angle. When the first set and the second set of grooves are curved grooves, the first set and the second set of grooves are preferably oriented in different directions. For example, a set of grooves is rotated 10 〇 to 18 相对 (e.g., 9 〇 0, 12 〇 0, or 18 相对) relative to the second set of grooves. This includes 93689.doc Ϊ 279290 rotated 45 relative to the second set of curved grooves (16). The polishing pad of the first set of grooves (丨2) is depicted in Figure 2. When the first set and the second set of grooves each comprise a circular, elliptical, square, rectangular or quadrangular groove having a cross-sectional shape, the grooves are oriented such that the first set of grooves are laterally displaced from the second set of grooves Proper distance. For example, the second set of grooves σ are moved away from the first set of grooves #, where the distance is 10% or more of the pitch of the symmetry axes of the grooves (e.g., 20% or more or 40% or more). Or, the first, and the groove is rotated 10 relative to the second set of grooves. To 180. Angle (such as 卯., 12〇. or 18〇.). 3 depicts a polishing pad comprising a first set of circular grooves (12) and a second set of circular grooves (10), wherein the first set of circular grooves are moved away from the second set of circular groove-segment distances, Wherein the distance is 5〇% of the pitch of the symmetry axes of the grooves. : The groove can have any suitable width. Each groove in the first or second groove group: the width may be the same or different. Typically, the groove width will be from 1 cm to 2 cm. The groove width can vary along the surface of the polishing pad as a function of the groove. The average width of the first and concave seven is defined as the first-to-interwidth. Similarly, the second, and the average width of the grooves is defined as the second groove width. The first and third slots may be the same or different. These grooves may have the same or different depths for any deep groove. The second = two groove group, each concave I _ X, the average depth of the groove is defined as the second Τ 'also 'the second group of grooves, the average depth is defined by the example ΓΓ one and the second groove depth May be the same or different. The depth of the groove may be greater than the depth of the second groove, or the second recess may be greater than the depth of the first groove. The sum of the depths of the ice and the second groove provides the total groove depth. In a body embodiment of 93689.doc 1279290, the total groove depth is equal to or greater than the total thickness of the polishing pad (i.e., the total distance from the top surface of the polishing pad to the bottom surface). For example, the first groove depth and the second groove depth may each be equal to half the polishing pad thickness. Alternatively, the first groove depth may be 55% or more of the thickness of the polishing pad (eg, 6〇% or higher, or 65% or higher), and the second groove depth is 45% or more of the thickness of the polishing pad. Low (eg 40% or lower, or 35% or lower). In another embodiment, the total groove depth is less than the total thickness of the polishing pad. For example, the total groove depth can be 90% or more of the total thickness of the polishing pad (or even 8〇% or higher, 7〇% or higher or 60% or higher). Preferably, the total groove depth is equal to or greater than the total thickness of the polishing pad. When the total groove depth is equal to or greater than the thickness of the polishing pad, the first and second sets of grooves will be interconnected by the first channel, wherein the first channel is oriented in the direction of the top and bottom surfaces of the vertical polishing pad. The dimensions of these first channels are defined by the width of the first and second groove sets. The first passage allows electrolyte to flow through the polishing pad body. This first channel (20) is as shown in Figures 1, 1B, 2 and 3. If the total groove depth is less than the total thickness of the polishing pad, and the first channel is not formed after the top and bottom surfaces of the polishing pad are grooved, the first and second groups of grooves may be interconnected by the second channel to help the electrolyte flow. Over polished thickness. Just as the _ channel '苐 channel extends from the top surface of the polishing crucible to the bottom surface and is oriented perpendicular to the top and bottom surfaces. The second channel can have any suitable cross-sectional shape (e.g., circular, elliptical, square, triangular, diamond, and the like) and any suitable size. The diameter of the second passage can be any suitable diameter. For example, the diameter of the second passage may be the same or different than the diameter of the first passage. The second channel can be placed in any suitable position on the polishing pad. For example, 93689.doc -10- 1279290 The second channel can be placed in or outside the groove (eg between the grooves). The number and size of the second channels will depend, at least in part, on the type of substrate to be polished. 4 depicts a polishing pad of the present invention comprising a first set of grooves (12), a second set of grooves (16), and a plurality of second channels (22), wherein the second channel is in the first and second sets of depressions The intersection of the slots. § The second channel can be used in combination with the first channel. In a preferred embodiment, the first set and the second set of grooves each include a linear groove having a total groove depth equal to or greater than the thickness of the polishing pad, such that the grooves are interconnected by the first channel, wherein the groove group is oriented Form 90. angle. 5A and 5B depict another preferred polishing pad comprising a top surface (10) and a bottom surface (14), wherein the top surface comprises a first set of grooves (12) and the bottom surface comprises a second set of grooves (16) Wherein the first group intersects the second set of grooves to create a first channel (2〇), and the polishing pad further comprises a plurality of second channels (22). The polished crucible is sized to have a south void volume to maximize the flow of electrolyte through the polishing crucible. For example, the void volume may be 3% or more (e.g., 5〇% or higher, 70/❶ or more or even 80% or higher). Typically, the polishing pad will have a void volume of 95% or less (e.g., 90% or less). The void volume of the polishing pad is comprised of the first and second sets of grooves, the first and second channels, and any void spaces (e.g., holes) in the body of the polishing pad. The void volume of the void space in the body of the polishing pad may be greater than, equal to, or less than the void volume of the groove. Preferably, the polishing pad body comprises an open cell structure that absorbs or transports the electrolyte. Preferably, the number, width, depth and orientation of the first and second sets of grooves are optimized to produce a uniform flow of electrolyte through the polishing pads, y and Z. The flow of electrolyte through the polishing pad can be aided by the pumping action of the polishing pad during polishing. Example 93689.doc -11- 1279290 For example, a porous polishing pad can absorb electrolyte during polishing and then release the electrolyte slurry under the greater downward pressure of the polishing tool. The pumping action will cause the flow of electrolyte through the polishing pad to vary irregularly with the rotational speed of the polishing pad (and anode) and/or the substrate carrier. The number, width, depth and orientation of the first and second sets of grooves can be optimized to maximize this resonance with the pumping action of the polishing apparatus. The electrolyte can help the electrolyte flow through the polishing pad by the presence of bubbles in the electrolyte. These bubbles may comprise any suitable gas, preferably containing air. In a specific embodiment, the width and/or depth of the groove and the void volume of the groove taper from one side of the polishing pad to the other (as opposed to) side of the polishing pad. Figure 6 depicts a polishing pad of this embodiment having a first set of linear grooves (ι2) and facing 90 relative to the first set of grooves. A second set of linear grooves (16) in the direction wherein the width of the first set and the second set of grooves increases from one side of the polishing pad to the other, thereby creating a groove volume gradient. A polishing pad having a gradient groove configuration is particularly suitable for ECMP devices that use one or more pumps to locally introduce electrolyte into the polishing pad surface. When the electrolyte is partially introduced into the polishing pad where there is less electrolyte volume, the design of the polishing pad will limit the electrolyte /' il body and force the electrolyte to flow into other areas of the polishing pad before exiting the polishing pad. Without this pad resistance, the electrolyte may only flow through the small pad area. The uniformity of the electrolyte flowing through the polishing pad is important to achieve uniformity of substrate removal. The first set can be at an angle to the second set of grooves. The angle of the groove can be any suitable. The angle, such as the groove angle, may be relative to the plane of the polishing pad. Preferably, the angle of the first set and the second set of grooves of 5, 30 or 30 causes the flow of electrolyte to point toward the polishing pad. Preferably, the first set and the second set of grooves have opposite angles 93689.doc -12 - 1279290 such that the first passage, if present, does not extend straight through the polishing pad body, but has a bend that can be used to limit electrolyte flow . The polishing pad body of the present invention may comprise any suitable material. Typically, the polishing pad body comprises a polymeric resin. Preferably, the polymer resin is selected from the group consisting of thermoplastic elastomers, thermoplastic polyurethanes, thermoplastic polyolefins, polycarbonates, polyvinyl alcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylenes, poly A group consisting of ethylene terephthalate, polyimide, polyarylamine, polyarylene, polyacrylate, polystyrene, polymethyl methacrylate, copolymers thereof, and mixtures thereof. More preferably, the polymeric resin is a thermoplastic polyurethane resin. Because of the highly grooved nature of the polishing pad and the attendant high void volume, the type of polymeric resin and the physical properties of the polymeric resin are important to maintain the physical integrity of the polishing pad. The polishing pad body can be a solid material, a closed cell material or an open cell material. The degree and type of porosity present in the polishing pad will depend, at least in part, on the type of substrate to be polished. In some embodiments, the polishing pad body is conductive. As such, the polishing pad body can comprise a conductive polymer or a non-conductive polymer, wherein the non-conductive polymer comprises a conductive element embedded or formed therein. The conductive polymer can be any conductive polymer. The conductive element can be any suitable element. For example, the conductive element can be composed of particles, fibers, wires, coils or sheets that are uniformly dispersed throughout the polymer resin. The conductive element can comprise any suitable conductive material including carbon, conductive metals such as copper, #, copper with molybdenum, and the like. An example of a suitable conductive polishing pad component is described in U.S. Patent Application Publication No. 2002/0119286 A1. 93689.doc • 13- 1279290 The polishing pad body can contain two or more polishing pads. For example, a first set of recesses can be included in the first polishing layer and a second set of grooves can be included in the second polishing pad layer. Different polishing pads can have different chemical and physical properties. In some specific embodiments, it may be desirable for the first polishing layer to be harder than the first polishing layer. The plurality of polishing layers can be bonded together using an adhesive or by welding or extrusion. The polishing pad of the present invention is ideally used in a method of polishing a substrate by ECMP. The method comprises (1) providing an ECMP device comprising a polishing pad of the invention, (ii) providing a substrate to be polished, (iii) supplying a conductive fluid to the ECMP device, (iv) applying an electrochemical potential to the surface of the substrate, and (v) The polishing pad is moved relative to the substrate to abrade the substrate and thus polish the substrate. Depending on the application, the electrochemical potential applied to the substrate can be fixed or varied over time. The ECMP device can be any suitable ECMp device, many of which are known in the art, and the ECMI device includes an ECMP station and a carrier. The ECMP station preferably comprises an electrolysis chamber, a cathode, an anode, a reference electrode, a semipermeable membrane, and a polishing pad of the present invention. As shown in Figure 7, the carrier (36) is supported above the ECMP station. The cathode (32) is preferably placed at the bottom of the electrolysis chamber (3 ()) and immersed in the electrolyte (4)). The anode is a conductive disc (34) on which the polishing pad state of the present invention is placed. Alternatively, the anode may be the conductive polishing pad of the present invention. The cathode can have any suitable shape and size and can comprise any suitable electrode material. Typically, the cathode is a non-consumable electrode containing a material different from the material of the deposition in which the deposited material is to be removed by anodic dissolution. For example, the anode may comprise mlu, gold, ', ruthenium, and the like. The best cathode contains a turn. The reference electrode (Μ) may comprise any suitable electrode material and is preferably placed in the electrolyte (4)). 93689.doc -14- 1279290 The semipermeable membrane (38) is preferably placed between the anode disc (34) and the cathode (32). The pore size of the semipermeable membrane allows the electrolyte to pass through, but prevents the polishing debris and the passage of air bubbles (e.g., hydrogen bubbles) emitted by the cathode during polishing. Preferably, the semipermeable membrane is a glass frit having a pore size of 5 to 150 microns. The electrically conductive fluid (i.e., electrolyte) typically comprises a liquid carrier and one or more electrolytic salts. The liquid carrier can be any suitable solvent, preferably water or water. The electrolytic salt can be any suitable electrolytic salt and can be present in the liquid carrier in any suitable amount. Generally, the electrolytic salt is based on sulfuric acid, scaly acid, perchloric acid or acetic acid. Suitable electrolytic salts include those selected from the group consisting of hydrogen sulfate, hydrogen chloride, hydrogen phosphate, potassium citrate, and combinations thereof. Preferably, the electrolytic salt is potassium citrate. The electrolyte may also comprise a base compound such as a hydroxide. The concentration of electricity (iv) is preferably 0.2M or higher (e.g., M5M or higher, or i〇m or more). The electrolyte can have any suitable pH. In general, the electrolyte? 11 is 2 to 11 (such as 3 to 10, or 4 to 9). The electrolyte optionally contains abrasive particles and polishing additives. The abrasive can be any suitable group of abrasives and can be selected from the group consisting of ceria, alumina, lead oxide, emulsified titanium, cerium oxide, magnesium oxide, oxidized bromine, and combinations thereof. The polishing abrasive can be selected from the group consisting of inhibitors, film formers, surfactants, and combinations thereof. The present polishing pad is suitable for use in a method of polishing a plurality of types of substrates (e.g., wafers) and substrate materials. For example, polishing pads can be used to polish substrates, including memory storage devices, glass substrates, memory or hard disks, metals (such as precious metals), magnetic heads, intralayer dielectric (ILD) layers, polymeric films, low and high dielectric constant films. , ferroelectric materials, micro-electromechanical systems (mems), semiconductor wafers, field hair 93689.doc -15- 1279290 projection displays and other microelectronic substrates, especially containing insulating layers (such as metal oxides, tantalum nitride or low A dielectric material) and/or a substrate comprising a layer of conductive material, such as a metal containing layer. The term "memory or hard disk" is equivalent to any disk, hard disk, hard-dish or memory that retains data in electromagnetic form. Memory or hard disks typically have a surface comprising nickel-phosphorus, but the surface may comprise any other suitable material. Typically, the substrate comprises at least one conductive material. Suitable conductive materials include, for example, copper, ruthenium, crane, imprint, nickel, titanium, face, tantalum, niobium, silver, alloys thereof, and mixtures thereof. The substrate typically also contains a metal oxide insulating layer. Suitable metal oxide insulating layers include, for example, aluminum oxide, cerium oxide, titanium oxide, cerium oxide, oxidizing hammer, cerium oxide, magnesium oxide, and combinations thereof. Moreover, the substrate can comprise, consist essentially of, or consist of any suitable metal composite. Suitable metal composites include, for example, metal nitrides (such as nitride buttons, titanium nitride, and tungsten nitride), metal carbides (such as tantalum carbide and tungsten carbide), nickel-phosphorus, aluminum borosilicate, and borosilicate. Glass, phosphoric acid glass (ps(7), borophosphoric acid glass (BPSG), bismuth/niobium alloy and tantalum/niobium/carbon alloy. The substrate also contains, essentially consists of or consists of any suitable semiconductor substrate material. Suitable The semi-conductor substrate material includes single crystal germanium, polycrystalline germanium, amorphous germanium, insulating layer overlying germanium and gallium arsenide. It will be readily appreciated by those skilled in the art that the polishing pad of the present invention can be used for other electrochemical activities or needs. A significant amount of polishing composition stream (such as a liquid carrier and polishing additive) is passed through a polishing pad manufacturing process. For example, the polishing pad of the present invention can be used in electrochemical deposition and electrochemical mechanical plating processes (ECMPP), which include electrochemical deposition and chemical mechanical A combination of polishing. [Simplified illustration] 93689.doc -16- 1279290 Figure 1A is a fragment depicting a partial polishing of a polishing pad of the present invention having a top surface (1 inch) and a bottom surface (14). Wherein the top surface comprises a first set of linear grooves (12), the bottom surface comprises a second set of linear grooves (16) in a direction of 9 turns relative to the first set of grooves, and the first set and the second set are concave The grooves intersect to create a first channel (20). Figure 1B is a fragmentary plan view of the presently described polishing pad including a first set of linear grooves (12) and a second set of linear grooves (16), wherein the second set of straight grooves The slot is oriented 90 degrees relative to the first set of grooves, and the first set intersects the second set of grooves to create a first channel (20). Figure 2 is a depiction including a first set of curved grooves (12) and a second A top view of a segment of the polishing pad of the present invention with a set of curved grooves (16), wherein the second set of curved grooves are oriented 45 with respect to the first set of grooves, and the first set intersects with the second set of grooves to produce a first Channel (20). Figure 3 is a fragmentary plan view depicting a polishing pad of the present invention comprising a first set of circular grooves (12) and a second set of circular grooves (16), wherein the second set of circular grooves are displaced The distance of the half of the circular groove diameter, and the first group intersects the second group of grooves to produce the first channel (20). Comprising a first set of linear grooves painted (12), a second set of linear grooves 〇6) and the second channel (22) of the polishing pad of the present invention, a plan view of a fragment. 5A is a fragmentary, partial cross-sectional perspective view depicting a polishing pad of the present invention having a top surface (10) and a bottom surface (14), wherein the top surface includes a first set of linear grooves (12), the bottom surface including relative to the first The group groove is facing 9〇. The second set of linear grooves (16) are oriented, and the first set intersects the second set of grooves to create a first passage (20), and the polishing pad further includes a second passage (22). 93689.doc -17 1279290 FIG. 5B is a fragmentary plan view depicting a polishing pad of the present invention comprising a first set of linear grooves (12) and a second set of linear grooves (16), wherein the second set of linear grooves is relative to the first A set of grooves is oriented toward 90. Direction, and the polishing pad further includes a first channel (20) and a second channel (22). Figure 6 is a fragmentary plan view of a polishing pad of the present invention comprising a first set of linear grooves (12) and a second set of linear grooves (16), wherein the second set of linear grooves are oriented 90 relative to the first set of grooves . The direction, and the width of the first and second sets of grooves is increased from one side of the polishing pad to the other. Figure 7 is a cross-sectional view of an electrochemical mechanical polishing apparatus comprising the polishing pad of the present invention. [Main component symbol description] 10 12 The first set of linear grooves on the top surface; a set of curved grooves ·, 14 16 The second set of linear grooves on the bottom surface of the first set of circular grooves; The second set of curved grooves; 20 22 30 32 34 93689.doc The second group of circular grooves, the first channel, the second channel, the electrolysis chamber, the cathode conducting plate, 18-1279290, 36, the carrier, the semipermeable membrane 40, the polishing 塾42, the electrolyte 44, the reference electrode, 93689.doc

Claims (1)

1279290 X. Patent Application Range: L polishing pad comprising a top surface having (a) a first set of grooves having a first depth and a first degree of visibility and (b) comprising a second depth and a second a body of a bottom surface of the second set of grooves of the width, wherein the first, and the grooves are interconnected with the second set of grooves and oriented such that they are not in line. 2. The polishing pad of claim 1, wherein the first and second sets of grooves have a group selected from the group consisting of a line, a curve, a circle, an ellipse, a square, a rectangle, a triangle, a diamond, and combinations thereof. Section shape. 3. The polishing pad of claim 2, wherein the groove is a linear groove. 4. The polishing pad of claim 3, wherein the first and second sets of grooves are non-parallel. 5. The polishing pad of claim 1, wherein the polishing pad has a void volume of 3% or more. 6. The polishing pad of claim 5, wherein the polishing pad has a void volume of 7% or more. The polishing pad of claim 1, wherein the first set of grooves is rotated 1 turn relative to the second set of grooves. To 9 〇. Xiao Duo. ^. The polishing pad of item 7, wherein the angle is 90. . • The item R is polished, wherein the first depth of the first set of grooves is combined with the second and the second depth of the groove to have a total groove depth equal to or greater than the thickness of the polishing pad. 10::: The polishing pad of claim 9, wherein the first set of grooves and the second set of grooves are interconnected, wherein the first channels are oriented perpendicular to a top surface of the polishing pad. 93689.doc 1279290 11. The polishing pad of claim 10, additionally comprising a plurality of second passages extending through the thickness of the polishing pad. 12) The polishing pad of claim 1, wherein a first groove depth of the first set of grooves is combined with a second groove depth of the first set of grooves to have a total groove depth less than a thickness of the polishing pad . 13. The polishing pad of claim 12, wherein the first and second sets of grooves are interconnected by a plurality of second channels extending through the thickness of the polishing pad. 14. The polishing pad of claim 1, wherein the first set of grooves, the second set of grooves, or a combination thereof has an average groove width of from 0.1 cm to 2 cm. 15. The polishing pad of claim 1, wherein the first groove width and the second groove width increase from one side of the polishing pad to the other side of the polishing pad. 16. The polishing pad of claim 1 wherein the body comprises a polymeric resin selected from the group consisting of thermoplastic elastomers, thermoplastic polyurethanes, thermoplastic polyolefins, polycarbonates, polyvinyl alcohols, nylons, elastomers Body rubber, elastomeric polyethylene, polytetrafluoroethylene, polyethylene terephthalate, polyimide, polyarylamine, polyarylene, polyacrylate, polystyrene, polymethyl a group of decyl acrylates, copolymers thereof, and mixtures thereof. 17. The polishing pad of claim 16, wherein the polymeric resin is a thermoplastic polyurethane resin. The polishing pad of claim 1, wherein the polishing pad body further comprises abrasive particles. 19. A polishing pad as claimed in claim 1, wherein the polishing pad is conductive. 2. The polishing pad of claim 19, wherein the polishing pad body further comprises a conductive element. The polishing pad of claim 19, wherein the polishing pad body further comprises a conductive polymer. A method of polishing a substrate by electrochemical mechanical polishing, comprising: (i) providing an electrochemical mechanical polishing (ECMP) device comprising the polishing pad of claim 1, (ii) providing a substrate to be polished, (iii) feeding a conductive fluid into the ECMP device, (iv) applying an electrochemical potential to the surface of the substrate, and (v) moving the polishing pad relative to the substrate to abrade the substrate and thereby polishing the substrate. 23. The method of claim 22, wherein the electrochemical potential system changes over time. 24. The method of claim 22, wherein the conductive flow system is supplied in one or more fruit cells. The method of claim 22, wherein the electrically conductive fluid comprises air bubbles. 26. The method of claim 22, wherein the polishing pad is conductive. 93689.doc
TW93116251A 2003-06-23 2004-06-04 Polishing pad for electrochemical-mechanical polishing TWI279290B (en)

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CN1809445A (en) 2006-07-26
TW200510124A (en) 2005-03-16
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JP2007518577A (en) 2007-07-12
KR20060026437A (en) 2006-03-23

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