TWI278984B - Electronic component and fabricating the same - Google Patents

Abstract

A system and method for forming post passivation inductors, and related structures, is described. High quality discrete components are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.

Description

1278984

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the fabrication of a high-performance integrated circuit, and more particularly to a method for forming a high-performance electron ridge such as an inductor element on a surface of a wafer, which can be reduced. Because the electricity caused by the wafer is consumed. [Prior Art]

The goal pursued by semiconductor technology is to be able to manufacture high-performance semiconductor components under competitive compensation. With the development of semiconductor processes and materials, coupled with new and sophisticated component designs, the size of such semiconductor components can be significantly reduced. Most of the semiconductor components are used to process digital data. However, some semiconductor components have integrated analog functions, so that semiconductor components can simultaneously process digital data and analog data, or semiconductor components can have only analog functions. One of the main difficulties in manufacturing analog circuits is that many of the electronic components used in analog circuits are very large. It is difficult to integrate with sub-micron pole electronic components, especially for capacitive components and inductive components. This is because of capacitive components and inductive components. The size is too big. In general, 'inductive components are used in the field of mobile communications, such as 疋 applied to semiconductor components equipped with RF amplifiers' and RF amplifiers mainly include tuned circuits. It has an inductance element and a capacitance element. Adjusting the inductance of the inductive component of the circuit, the capacitance of the capacitor, and the frequency all affect the impedance generated by the trimming circuit. For a signal of a certain frequency, the trimming circuit can be either high impedance or low impedance. The adjustment circuit can block or conduct the conduction of the communication number, and adjust the circuit according to the frequency of the component.

Page 5 1278984 Case No. 93111830 V. Description of the invention (2) The analog signal can also be amplified. Thus, the adjustment circuit can be used as a filter to filter out signals of a certain frequency or to remove noise generated by circuits that process analog signals. By using the principle of LC resonance, the adjustment circuit can also generate high electronic impedance, thereby canceling the parasitic capacitance effect in some lines, and when the inductance element is formed on one surface of the semiconductor substrate, the following problem occurs, that is, in the spiral The parasitic capacitance generated between the inductive component and the underlying substrate has a self-resonant effect, thus limiting the use of the inductive component when designing the high frequency circuit. In addition, by designing the inductive component, the capacitance of the inductive component to the underlying substrate can be reduced. In high-frequency circuits, the electromagnetic field generated by the inductive element causes an eddy current to occur in the bottom of the earth. Since the germanium substrate is a kind of resistive conductor, the thirst current will consume electromagnetic energy, resulting in a severe energy loss, and a low quality parameter is formed. The resonant frequency limits the upper limit of the I frequency. In addition, the full current generated by the inductive component can interfere with the performance of the circuit close to the inductive component. The reason for the gold is to form the details of the inductive components. ‘The prostitutes and the deeper circuits also consume energy, which also forms an inductive component with low quality parameters. ‘ When making high-frequency analog semiconductor components, it is necessary to use a dielectric component, that is, an inductor component, to form a LC 供 connection-critical ^ ^ 兴 电路 circuit. In the trend of the density of components of the main fans, this substrate: even if the surface is formed, the inductive component is formed in a very small case... In general, the + 1 formed on the number of bases exhibits a spiral & This plane is parallel to the base of the mat | 1278984 Case No. 93111830 V. Description of the invention (3) The conventional method of manufacturing the inductive component on the surface of the substrate has the following limitations. Most of the high quality coefficient inductive components are arranged in a hybrid device configuration, Monolithic Microwave Integrated Circuits 'MMICas

The middle or the 疋 is provided by separately arranged components, however, the manufacture of the above electronic components is not easily integrated with the basic process of integrated circuit manufacturing. If the circuit for storing analog data and analog data is integrated with the circuit for digital data control and digital data storage and fabricated on a large semiconductor substrate, many significant advantages will be achieved, and the advantages of integration include reducing manufacturing costs and reducing energy consumption. The spiral inductor element formed on the surface of the semiconductor substrate is limited by actual size, which causes parasitic capacitance between the line of the inductor element and the underlying substrate, and is affected by the resistive germanium substrate underneath. Inductive component It will cause the loss of electromagnetic energy. When the resonant frequency of the trimming circuit suddenly drops, the parasitic capacitance can have a serious negative effect on the LC circuit. It is worth noting that the electromagnetic field generated by the inductive component causes eddy currents in the resistive substrate to cause severe energy loss, which results in a low quality parameter inductive component.丨In addition, the quality parameter (Q) can be used to represent the performance of the inductor. The quality parameter is defined as Q = Es/El, where Es represents the energy stored in the component of f, and E1 represents the amount of monthly b lost in the reaction portion of the component. When the quality of the component is higher, the resistance value of the component will become closer to zero, and the quality parameter of the component will be infinitely large. In the case of an inductive component formed on a germanium substrate, it is affected by the underlying resistive structure and is affected by the metal line forming the inductive component, so that the electric 1278984 is number 93111830. 4) The magnetic energy will drop significantly. In terms of components, the quality parameters are used to measure the purity or susceptance of the component. However, the resistive base, resistive metal circuitry, and dielectric loss all degrade the quality parameters. In practice, the circuit is always equipped with some resistive elements that waste energy. This reduces the energy that can be compensated (r e c 〇 v e r e d). The quality parameter is unitless. For a separately arranged inductive component mounted on a printed circuit board (PCB), when the quality parameter is greater than 丨00, it is considered to have a high quality parameter; however, it is formed in the product. In the case of an inductive component in a bulk circuit, the quality parameter is between approximately 3 and 1 〇. The inductive component can be formed on a large substrate having a semiconductor component by a conventional semiconductor process. At this time, the parasitic capacitance generated by the inductor component limits the upper limit of the cutoff frequency. However, this limitation is unacceptable in many applications. Inductive components with higher quality parameters must be designed, such as 50 or higher, where the quality parameters are affected by the resonant frequency of the circuit (1). In the prior art, components that are separated from each other must be configured to provide higher The quality parameters, and these separate components should be integrated with the functions of the surrounding components. However, when the inductor components and these surrounding components are to be placed on a semiconductor substrate to form a large circuit structure, high quality parameters cannot be achieved. If a non-large-scale circuit structure is used, additional lines must be used to connect the components of the device, and the network-like connection will also generate additional parasitic capacitance and resistance. In many applications of RF amplifiers. For example, portable battery charger: supplies, the power consumption is Important considerations entry point, and are better prepared low. 咼 by lifting power consumption can be partially compensated based send two resistive-capacitive effect and energy loss, but there are some limitations to this method of electrically

Page 8 1278984 Case No. 93111830 V. Invention Description (5) And all of the above problems occur in the fast-moving wireless communication products, such as mobile phones, where the integration of RF integrated circuits is the most important challenge. one. In addition, the above problem can be partially solved by significantly increasing the operating frequency, for example, increasing from 10 GHz to 100 GHz. However, under such a high operating frequency, the quality parameters of the inductive component are affected by the 矽 substrate. Will drop significantly. In order to enable the product to operate at this frequency, large-scale inductive components have been developed, which use materials other than germanium as the basis for making inductive components, such as sapphire or arsenic. Gallium (GaAs) is the substrate. Compared with the germanium substrate, these inductive elements formed on a non-antimony substrate have a low substrate loss because eddy current is not formed, so there is no loss of electromagnetic energy. Inductive components with high quality parameters are produced. Moreover, in the above manner, the inductance element generates less parasitic capacitance, and thus can operate at a relatively high frequency. However, if more complex applications are required, it is necessary to use Shi Xi as a substrate to form the inductive component. This is because if a material other than tantalum is used, such as gallium arsenide, it is used as a substrate. And when forming a semiconductor component, there are many technical challenges. Since gallium arsenide is a semi-insulating material at high frequencies, the electromagnetic loss caused by the deified gallium substrate can be reduced, which can increase the quality parameters of the inductive components formed on the gallium-arsenic substrate. However, gallium arsenide wafers are very expensive, and the use of RF wafers using gallium arsenide has a better cost advantage in the process. There are many ways to integrate an inductive component with a semiconductor ring without sacrificing component performance (for example, due to substrate loss).

Mm Page 9 1278984 ___ Case No. 93111830 _ Year Month Day _ Amendment 5. Invention Description (6) Integration. One of the methods is to selectively remove the germanium substrate at the bottom of the inductor element by etching or micromachining, thereby reducing the resistance energy loss and parasitic effects of the substrate. Another method is to use a multi-layer metal layer connection, such as aluminum, or a copper metal layer connection formed by damascene. In another method, a high-resistance stone substrate is used, which can reduce the resistance loss caused by the substrate. The loss of resistance caused by the substrate significantly affects the quality parameters of the inductive component with germanium as the material. In addition, the biased well (biased we 11) can be placed under the spiral inductor element, thereby reducing the inductance loss in the substrate. Another complicating method is to form an active inductive component that can utilize the active circuitry to simulate the electronic characteristics of the inductive component. However, analog inductive components can cause high power consumption and noise, so this method cannot be applied to low power and high frequency products. All methods have a common purpose, which is to improve the quality parameters of the inductive component and reduce the surface area of the inductive component. The most important consideration is the part of the electromagnetic energy loss, because the electromagnetic energy will cause 矽The substrate generates eddy currents. These gold surfaces are impacted when the volume of the integrated circuit is low and the metal wiring of a certain line or system of the wafer is gradually reduced. Due to the metal wiring, the wafer performance is significantly RC delay effect of the underground bus and the ground bus. Use a wide metal to reduce the resistance

Page 10 The effectiveness of each piece of crystal is reduced. Used to become more important, and it is a parasitic capacitance and resistance drop that will be effective on the line. The most obvious voltage drop and key signal are connected to the chip and others, and the integrated circuit can generate a serious negative increase. The impact system is the resistance of the power supply, the circuit, the electric solution 1278984 __ case number 93111830_ 曰 曰 chrome, τ, __ · five, invention description (7) line, which will lead to a higher capacitance of the metal line. In today's technology, when an inductive component is to be formed on a semiconductor substrate, fine line technology can be utilized and the inductive component can be formed under the protective layer. This will make the inductive component very close to the surface of the substrate, and the distance between the inductive component and the surface of the substrate is substantially less than 10 microns, so in Shi Xi

The presence of high electromagnetic losses in the substrate can reduce the quality parameters of the resistive components. M. US Patent Publication No. 5, 21, 403 (Nakani Shi) discloses a method of connecting a line of wires in which internal and external line connections are formed in a circuit substrate on a wafer, and the design of the logic circuit depends on The length of the line connection. U.S. Patent Publication No. 5,50,006 (66 [1111311,1, ^31·) discloses a structure having an insulating layer between an integrated circuit and a circuit substrate, and the pin which is dispersed can be a contact of the wafer. Contact with a substrate. U.S. Patent No. 5,055,907 (Jacobs) discloses an integrated semiconductor structure that allows a manufacturer to form a thin film multilayer circuit on a support substrate or wafer for integration. Circuitry outside the chip. #US Patent Publication No. 5,1,6,461 (Volfson et al.) discloses a multilayer wiring structure that is bonded by a TAB junction and using a dielectric layer of a polyimide and a metal layer. Made on the wafer. U.S. Patent No. 5,635,767 (Wenzel et al.) discloses a method of reducing the resistance of a resistive capacitor in a PBGA structure in which multiple layers of metal are separately disposed. U.S. Patent No. 5,686,764 (Fulcher) discloses a flip chip

Page 11 1278984 J^J3H1830 V. INSTRUCTIONS (9) On the protective layer or on the thick dielectric layer, the ten electronic components are, for example, inductive element capacitive elements or resistive elements. Additionally, the present invention provides a method of bonding a passive component that has been fabricated to the surface of a wafer. The above and other objects, features, and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Announcement No. 6, 383, 9 1 6 is the same as the present invention

• The transferee, which discloses a wafer structure having a reconfigured wiring layer and a gold P wiring layer disposed on the dielectric layer, wherein the dielectric layer is on the protective layer of the conventional wafer. The protective layer is on the integrated circuit, while the thick polymeric layer 2 is selectively disposed on the protective layer, and the wide or thick metal wiring is on the protective layer. U.S. Patent Publication No. 6,3,3,423 is assigned to the same extent as the present invention. The assignee discloses a structure for forming an inductive component having a high quality parameter on a protective layer of a cymbal. This kind of high quality parameter is applied in the high frequency circuit, and can reduce the loss of electric energy: Sense::, also exposes 70 pieces of capacitor and resistive element, which can be formed on the $ surface of the 矽 substrate, thereby reducing the position on the 9 base The parasitic effects caused by the electronic components. Dry = Referring to Figure 1, there is shown a schematic cross-sectional view of a sheet structure in accordance with U.S. Patent Publication No. 6,383,91. The surface of the dream substrate 10 has a transistor. ii: an element (not shown in Fig. 1). The surface of the stone substrate 10 is covered with a dielectric layer i2 (ild) ’ on the electronic component. Metal / dielectric - ~ located on the internal dielectric layer 12, metal / dielectric layer &quot; by 扛s small

Page 13 1278984 _93111830---壬-------:- V. Invention Description (8) Substrate, by disposing the power supply line from the input and output leads, can reduce the resistance and capacitance delay effect. No. 6, 〇〇 8, 102 (Alford et al.) discloses a spiral inductor element formed by two layers of metal layers, wherein the two metal layers can be connected by via holes. US Patent Publication No. 5,372,967 (Sundaram et al.) discloses a spiral inductive component. U.S. Patent Nos. 5,576,680 (Ling) and 5,884,990 (Burghartz et al.) disclose another form. Spiral inductor element, piece. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a high performance wafer structure which, in particular, can improve the performance of RF. Another object of the present invention is to provide a method of manufacturing an inductor element having a high quality coefficient. The third object of the present invention is that a germanium wafer can be used instead of a gallium arsenide wafer and an inductive component of high quality coefficient can be fabricated on a stone wafer. The fourth object of the present invention is to extend the frequency range of the electrical components formed on the surface of the crucible substrate. The fifth object of the present invention is to enable the formation of high quality passive components on the surface of the dream substrate. : off, on the thick dielectric layer on the protective layer

Page 12 fi wVcnR lack / line process can refer to the US Patent Bulletin 祙 * s * Shi change the goods are extended from the US Patent Notice No. 6,383,91 6 - Qian Jie Road can form high-performance electronic components in Bao 1278984 MM 93insan V. Invention Description (10) A dielectric layer of one layer, and at least one metal connection 13 is in the metal/dielectric layer 14 'Metal connection 13 constitutes an electronically connected network, and the uppermost metal The layer has a partial region defined as an electrical junction 16 which can be electrically connected to a transistor n or other component located on or in the surface of the substrate 1 . The protective layer 18 is located on the metal/dielectric layer 14 to prevent mobile ions (such as sodium ions), moisture, transition metals (such as gold, silver, copper) or other contaminants from entering the wafer, wherein the protective layer i 8 is, for example, a composite layer composed of an oxygen stone compound or a nitrogen compound. Protection &gt; Layer 18 is used to protect electronic components such as transistors, polysilicon resistors or polycrystalline slab-polysilicon capacitors and fine metal traces underneath. The key step in U.S. Patent Publication No. 6,383,91 6 begins with the deposition of a thick polymer layer 20 in which a polymer layer 2 is deposited on a protective layer 18. In order to be connected to the electronic contacts 16, the openings 22, 36, 38 will pass through the polymer layer 20 and the protective layer 18 and will be aligned with the electronic contacts 16. Electrodes 16 can be electrically extended into the polymer layer 2 through openings 22, 36, 38 located in the polyimide layer 20. In the preferred case, the material of the polymer layer 20 is, for example, polyimide, and the polymer layer 20 is, for example, a photosensitive material. The polymer layer 2 is made of benzocyclobutene (BCB), polyarylene or (parylene) or epoxy-based materials such as 疋SU-8 epoxy resin. S〇tec Microsystems, Renens, Switzerland). After the openings 22, 36, 38 are formed, a metallization process can be performed whereby the patterned wide metal layers 26, 28 are formed and the electronic contacts 16 can be connected. The lines 26, 28 can be of any design in width and thickness

Page 14 1278984 __ Case No. 93111830_ Year of the Moon Amendment 5, invention description (11) degrees to meet the required circuit design, and lines 26, 28 can be used as power bus, ground bus or signal bus use. The wires 26, 28 can be connected to circuitry external to the wafer via wire bonds or bumps. The electronic contacts 16 are positioned at the top of the thin dielectric layer 14 (as shown in Figure 1), and the size of the electronic contacts 16 can be reduced to reduce the capacitance of the underlying metal layer. If the size of the electronic contact 16 is too large, the winding of the metal layer will be affected. ' For example, the thick polymer dielectric layer 2 of polyimine is after hardening -------, the thickness of the electrical layer "0 &gt; can exceed 2 microns, and the polymer dielectric layer 2 The thickness is, for example, between 2 microns and 150 microns, depending on the needs of the electronic design. For thicker polyimide layers 20, multiple spin coatings and hardenings can be used to form the poly. U.S. Patent No. 6,383,91, the disclosure of which discloses the use of the thickness or width of the metal 28 to form paths 3, 32, 34 having different directions as shown in Fig. 1, which can be used as inter-circuit. For electrical connection, the wide metal 28 has a smaller resistance value and capacitance value than the fine line metal layer 14 located below, and is easier to manufacture and has a lower cost. It is modified from the US Patent Publication No. 6,383, 916 on the thick polyimide layer 20. The inductance element is more than 12 丨 4 ,, and can be parallel to the surface of the substrate 10, and through the layers 12, 14, 18, 20 structure of the point of the eve of the ancient life of the project 姝 龅 龅 念 念 再 再 再 再 再 再 再 再 再 再 再 再 再 再 再 再 再 再The surface of the substrate. Figure 2 shows the inductive component formed by the cross-section on the surface of the substrate 10.

The genus of the genus on page 15 can reduce the index of resistance energy. The way of thick gold plating is to form, for example, gold: ^. In which, you can use electricity one or two. Low resistance metal, while its gold

V 1278984 Λ January 曰 Amendment Case No. 93111830 V. Description of invention (12) ^ The thickness of the genus is, for example, approximately 20 microns. Compared with the conventional technique of forming an inductor element under a protective layer, the electromagnetic field generated by the 矽 substrate 1 矽 is reduced by increasing the distance 兀 between the inductor element and the 矽 substrate, and the quality parameter of the inductance element can be improved. . The inductive component can be formed on the protective layer or can be formed on the protective layer: a thick dielectric layer such as polyimide. In addition, an inductive component formed of a wide and thick metal has a small parasitic resistance. Another important point of the invention is that the width of the opening 19 of the protective layer 18 can be as small as 0.1 microns. Therefore, the electronic contacts 16 can be small, which can improve the winding capability of the thin metal layer of the top layer and have a lower capacitance value. Another important feature of the present invention is that the openings 22, 36, 38 of the polymer layer 20 can be larger than the protective layer opening 19, and the openings 22, 36, 38 of the polymer layer 2 are aligned with the protective layer opening 19. . Designing the polymer layer 2〇 with larger openings 22, 36, 38 is a selective design and is easier to fabricate, and the polymer layer 20 is designed with larger openings 22, 38 that can be matched. The design of the thick metal layer is used to complete the metal deposition process of the present invention after the protective layer. FIG. 2 illustrates the wiring structure 26 and the inductive component 40. The inductive component 40 includes two contacts 41 and 43 that are electrically connected to the electronic contacts 16 through the polymer layer 2 . Further, referring to Fig. 2, in accordance with another aspect of the present invention, another polymer layer may be formed on the structure as shown in Fig. 2. Figures 24a and 2b show another feature of the invention wherein the way of connecting the contacts of the $, J t $ elements is different from the two directions as shown in Figure 2

Page 16 1278984 Case No. 931Π83Π V. Inventions (13) Connected contacts. As shown in Fig. 24a, the dielectric layer 35 is formed on the metal wiring 26 and the inductance element 4, and the dielectric layer 35 is made of, for example, a polyimine. The opening 36a is connected to one end of the inductive element 4, and one end of the inductive element 40 can be exposed. The inductive component 4A has an upwardly connected contact and a downwardly connected contact 39, which is a top-to-bottom structure. The port 24b shows another structure in which two upwards are provided. The contact openings 36a, 38a expose the inductive component 4A, which is a "upper" structure. In Figures 24a and 24b, the upwardly facing contacts of the inductive component can be electrically connected to the external component by way of wire bonding or by forming bumps. In the case of the wire bonding process, the upper surface of the component of the inductive component 40 must form a metal that can be bonded to the wire bonding wire, such as gold or aluminum. In the case of a bump connection, a bump underlayer metal (UBM) may be formed in the upwardly facing contact opening to form a bump. In Figs. 24a and 24b, the connection lines are formed by the same method as the structure 26 and the inductance element 40, so that the inductance elements can be connected to the other contacts on the wafer via the openings 36a, 38a or as described above. Electrical connection. Please refer to FIG. 24C, which illustrates another feature of the present month, in which an extension line 89 is connected to the inductive component 4〇, and the contact opening 361) exposes the extension line 89, wherein the contact opening The position of 36b is, for example, at the edge of the wafer, and the wire bonding process can be facilitated, so that the inductance element 4 can change the position of the external connection through the extension line 89. The configuration of the contact opening 38b is as described above. The extension line 89 and the metal structure 26 are the same as the inductance element 40. ^Blll Mil k ^_ __ m Page 17 1278984 Case No. 93111830 Thousand η V. The invention description (14) is completed. The extension line 89 can be connected to the inductive component 4 to change the position of the inductive component 40 to the external connection, wherein the extension line 89 can have a connector that is connected downward (not shown, but this concept has been described previously) instead of the upward connection. The contact is 3 6 b. When the contact of the inductive component is in the middle region, such as the contact exposed by the opening 38b of the 24th figure, the contact located in the middle region of the inductive component cannot change its external connection by extending the line. The position, but the contacts located in the middle of the inductive component can be connected upwards or downwards. Figure 3 is a top view of the non-helical inductive component 4, wherein the inductive component 40 is on the surface of the dielectric layer 2, and the inductive component shown in Figure 2 is along the section line 2 in Figure 3. — 2 is a schematic view of the section. FIG. 4 is a schematic cross-sectional view of the inductor element 4 ,. By adding a conductive sheet 44a, the influence of the inductor element 4 〇 on the substrate 1 可以 can be insulated, wherein the conductive 糸 Λ Λ is placed under the inductor element, and the conductive sheet 44 a is like Is a Lei into _ f material. The conductive sheet 44a extends over the surface of the protective layer 18, and a number of pieces are aligned with the conductive sheet - and placed on the conductive sheet. Guide 4. The power of the ring: to avoid the substrate 10 being subjected to at least 50% of the inductance of the inductive element 40, the inductive element 40 is at least one hundred and eight > I. Between the better case 10 There are guides; = more than 80% of the area and the semiconductor base 2 - 1 - D44a 'so can enhance the shielding base page 18 1278984

1 〇 ability. The conductive sheet 44a can be electrically connected to one of the electrodes of the inductor element 4 (as shown in FIG. 4, the conductive sheet 44a can be electrically connected to the rightmost electrode 43 of the inductor element 4), and the conductive sheet 44a can be It is at the level of the floating voltage' or it can be connected to other voltage levels, depending on the electronic design of the system. The method and material for producing the conductive sheet 44a may be a method and a material for forming the metal connecting line 26 and the inductance element 40 as will be described later. The conductor 44 can be formed at the same time when the conductive sheet 44a is formed, and the thick metal in the upper layer can be connected to the electronic contact 16 by the conductor ,, as shown in Fig. 4. The first polymer layer 47 can be selectively formed on the inductive component 4 and on the metal connection line 26 to provide additional protection to the metal structure. Referring to Figures 12-2 through 2, there is shown a method of forming an inductive component or other passive component on a protective layer in accordance with the present invention. As shown in Fig. 2, the substrate 80 is a dielectric layer located on the lower layer, and the material of the metal contact 81 is, for example, Ming. The opening 82 can be formed by a patterning step through the protective layer 84, and the opening 82 can expose the metal contacts 81. For example, the polymer layer 86 of the polyimide may be formed on the protective layer 84 and the metal contact 81. For example, the polymer layer 86 of the polyimide may be formed by spin coating, or may be This can be done by screen printing, or it can be done by pressing the polymer dry film. Figure 13 is a process for forming the opening 87 of the polymer layer 86, wherein the maximum width of the opening 87 of the polymer layer 86 is greater than the maximum width of the opening 82 of the protective layer 84 (see Figure 12). The opening 8 7 has an inclined side wall 85. At the beginning, the opening 87 of the polymer layer 86 has vertical sidewalls, however

Page 19 1278984

After the step, the side wall 85 will assume a slanted pattern, and the opening 87 will have a semi-tapered shape with 疋, and the inclination angle of the side wall 85 is, for example, 45 or 疋, which is approximately 5 degrees to 6 degrees. In addition, the inclination angle of the side wall 85 may also be as small as 20 degrees. In the present embodiment, the larger vias may be through the polymer layer 86 such as yttrium polyimine, and aligned with the opening of the lower layer in the lower layer, and also The connection is in the sub-micron metal layer of the lower layer. The size of the sub-micron metal layer to the wide metal level, the size of the sub-micron metal 导-via line can be gradually increased. Please refer to FIG. 1 3, which illustrates a method and a metal structure for forming a connection line and an inductance element on a protective layer in accordance with the present invention. First, an adhesion/barrier layer 88 may be formed by sputtering, and the material thereof includes a titanium tungsten alloy, a titanium nitride compound, a button or a nitrogen compound, and the adhesion/barrier layer 88 has a thickness of, for example, 5〇. 〇 ang (angstr〇ffl) to 5 〇〇〇 between. Then, a seed layer 9 such as gold may be formed by sputtering to adhere to the adhesion/barrier layer 88, wherein the thickness of the seed layer 9〇 is, for example, between 3 〇〇 and 300 Å. . Referring to FIG. 14 , a thick layer of a material such as gold may be formed by electroplating, wherein the thickness of the thick metal layer 92 is, for example, between 1 micrometer and 20 micrometers. Before the electroplating process is performed, a thick photoresist 94 is formed, and the thickness of the photoresist 94 is greater than or equal to the thickness of the thick metal layer 92. Through the lithography step, the photoresist 94 exposes the seed layer 9〇, and then The thick metal layer 92 is formed by electroplating. After the electro-mine process, the photoresist 94 can be removed, as shown in Figure 5. The thick metal layer 92 is used as an etching mask, and can be processed by an etching process.

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For example, 1278984 _m 93111830___ year, month, and day, paragraph 5, invention description (17) remove the adhesion / barrier layer 88 and seed layer 90, as shown in Figure 16. In the illustration, only one of the inductive elements 4A is shown, but it will be appreciated by those skilled in the art that the entire inductive element 4 can be completed in this step. As shown in Figs. 17 and 18, the thick metal layer 92 may be filled only in a portion of the opening 87, so that an inductance element having a high line density and a fine line can be designed. In the present embodiment, the size D of the polymer layer opening 87 is, for example, about 15 μm, and the distance between the metal lines of the inductive element is as small as 4 μm. Therefore, patterning the metal located within the opening 87 of the polymer layer is also an important feature of the present invention. An adhesive/barrier layer 88 and a seed layer 9 of, for example, gold may be formed by the means of a money bond, and a photoresist 95 may be formed, as shown in Fig. 17. A thick metal layer 92, such as gold, can then be formed by electroplating. Thereafter, the photoresist 95 can be removed and the adhesion/barrier layer 88 and the seed layer 90 previously under the photoresist 95 can be etched away, as shown in FIG. 18, in another embodiment of the present invention, Copper can be utilized as the material of the thick metal layer in the metal structure on the protective layer. The structure at the beginning is shown in Figure 3, and then refer to Figure 19. It can be sputtered into an adhesion/barrier layer such as chrome or titanium. The thickness is, for example, 2 〇(^ Å to 2 〇〇 ,, then, a seed layer 102 such as beryllium copper may be formed by sputtering, the thickness of which is, for example, between 2 〇〇〇 and 1 〇〇〇〇 Then, a thick metal layer such as copper can be formed by electroplating, and the thickness of the metal layer 1, for example, is between 3 micrometers and 2 micrometers, and the thickness can be improved, the photoresist 9 4a and the conventional lithography process. Define the area to be plated.

Country

Page 21 1278984

Layer 106, wherein the thickness of the metal top layer 1 〇6 is, for example, between 〇·i micrometers to 3 micrometers. Referring to Figure 20, the photoresist 94a can then be removed and exposed to a seed layer 102 such as beryllium copper. Next, a thick metal layer 104 such as copper may be used as an etch mask&apos; and the adhesion/barrier layer 100 and a seed layer 1〇 such as copper may be removed by etching. If a metal top layer 比如6 such as nickel is formed, the metal top layer 1 〇 6 can serve as an etch stop layer during the etching of the adhesion/barrier layer 100 and the seed layer 102, at which time the copper etch rate can be used. A faster etchant is used to etch the seed layer 102, which reduces the consumption of copper metal in the thick metal layer 1〇4. In the illustration, only one of the inductor elements 4A is shown, but it is known to those skilled in the art that the entire inductor element 4 can be completed in this step.

As shown in Figs. 22 and 23, the thick metal layer 1〇4 may be a portion filled only in the opening 87, as shown by a portion 9 2 in which the thick metal layer 1〇4 is filled in the opening. As previously described, an adhesion/barrier layer 100 and a seed layer 102 such as copper may be formed by sputtering, and a &lt;front photoresist 95a&apos; is formed as shown in Fig. 22. A thick metal layer 104, such as copper, can then be formed by electroplating. Thereafter, the photoresist 95a can be removed, and the adhesion/barrier layer 100 and the seed layer 102 can be etched away, as shown in Fig. 23. Referring to Figure 5a, the metal structure is as described above, and it is noted that in this embodiment, a polymer layer such as polyimide is not formed on the protective layer. The inductive component 19a is formed directly on the protective layer 18, wherein the lower the resistance of the metal line used to form the inductive component 19a, the better.

Page 22 1278984 &quot;&quot;&quot; _ Case No. 93118830 __年月月日_修正___ V. Invention Description (19) In order to achieve the above purpose, when the inductor element 19a is formed, a thick gold such as gold may be formed. Metal layer. In the above design, the quality parameter for the application 'inductive component 19a of 2·4 GHz can be increased from 5 to 20. As mentioned above, the inductive component of Figure 5a can be connected to other components, such as the contact at the lower layer, as shown in Figure 4, and the connection direction of the inductor component can be, , the structure of, as shown in Figure 24a; or the connection direction of the inductive component can be "all upwards" structure, as shown in Figure 24b.

A polymer layer (not shown) may be selectively formed on the inductive element 19a. Further, the polymer may be formed only under the inductive element and not formed elsewhere on the protective layer, as compared to the area. Larger polymer layer 'small area of polymer block has lower internal stress, as shown in Figure 5b or Figure 5c', which respectively shows a schematic cross-sectional view of an inductive component formed on a polymer block in accordance with the present invention. And the top view. Each of the polymer blocks has at least one inductive component, wherein FIG. 5C illustrates the first inductive component 4a and the second inductive component 40b. Referring to Figure 5b, the polymer block 20a is formed by, for example, depositing a polymer layer and then patterning the polymer layer, thus forming a polymer block 20a. The polymer block 20a can also be formed by screen printing or by pressing a dry film. After the formation of the polymer block 2〇3, the inductance elements 40a, 40b may be formed on the polymer block 2A. The external connection method of the inductive elements 40a, 40b of FIG. 5b may be as described above, wherein the inductive element 40b has, for example, two downwardly facing contacts "a, 43a, which may be connected to the electronic contacts 16." 4〇3 does not have

1278984

The contact 'but can be connected up to the external circuit as previously described. Figure 5c is a top view of the inductive component in accordance with the present invention, and Figure 5b is a cross-sectional view along section line 55-51) in Figure 5c. As shown in Fig. 5c, the polymer blocks 2〇a are isolated from each other, and the polymer block 20a is formed only under the inductive element, while other regions where the polymer block is not formed, the protective layer 18 Can be exposed to the outside. An additional polymer protective layer (not shown) may be selectively formed on the inductive elements 40a, 40b. The polymer blocks as shown in Figures 5b and 5c may also be formed under other components, for example, under passive components such as resistive and capacitive components. Figures 6a and 6b illustrate another preferred embodiment in accordance with the present invention. As shown in Fig. 6a, the dielectric layer 47 is positioned between the bottom layer 圏6〇 and the upper layer coil 62, and the polymer layers 20, 47, 64 may be made of the material described above. The opening 66 is positioned in the uppermost polymer layer 64 to expose the upper coil 62. Figure 6b is a cross-sectional view showing the structure of a wafer in accordance with another embodiment of the present invention. The bottom layer coil 6 〇 can be directly formed on the protective layer j 8 . FIG. 6 c is a perspective view showing the inductor element i9a in the form of a solenoid, wherein the inductor element 19 a is formed on the protective layer 18 . The inductive component 19a includes a via metal 23, an underlying metal structure 25, and a top metal structure 2 7 'where the via metal 2 3 is in the thick polymer layer 20 'which is a vertical metal structure. The underlying metal structure 25 and the top metal structure 27 can be electrically connected through the via metal 23.

1278984 Case No. 93111830 V. Description of Invention (21) Figure 6d shows a schematic perspective view of the inductor element 19a in the form of a solenoid, wherein the inductor element 19a is formed on the first polymer layer 29, and the inductor element 19a is turned on. The hole metal 23 is located in the second polymer layer formed on the first polymer layer 29. Figure 6e is a top view of the inductor element in the form of Figure 6c and Figure 6 (1) in the form of a solenoid, wherein the through-hole metal 23 can make the underlying metal, the structure 25, and the top metal structure 27 Figure 6f is a schematic cross-sectional view of the inductive component in Figures 6c through 6e, wherein Figure 6f is a cross-sectional view taken along line 6 f 6 f in Figure 6 e. 6g and 6h, which show schematic diagrams of a toroidal form of an inductive component in accordance with the present invention, wherein the inductive component is a spiral coil of a surrounding shape. In the 6th diagram, the inductive component is illustrated. The three-dimensional arrangement is not intended, wherein the inductive component 68 includes a via metal 23a, an underlying metal structure 25a and a top metal structure 27a, and the via metal 23a is connected to the underlying metal structure 25a and the top metal structure 27a. Figure 6h shows the 6g The top view of the inductive component in the form of a torus (t〇r〇idal) is shown in the figure. The winding characteristics of the inductive component 68 have been described in the prior preferred embodiment and will not be described here. A capacitive element in accordance with the present invention is formed in A schematic cross-sectional view of the bottom layer, wherein the insulating layer is on the protective layer. The conductive connecting layer 14 and the contact 16 are located on the substrate 1 and the protective layer 8 is formed on the connecting layer 14. The protective layer 18 has an opening, which can expose the contact point. It is known to those skilled in the art that the capacitive element is from the lower electrode, page 25, 16 1278984 _ case number 931 η rib η five, invention description (22) The electrical layer and an upper electrode are formed, and the capacitor dielectric layer is located between the upper electrode and the lower electrode. The capacitive element shown in FIG. 7a has a lower electrode 42, a valley dielectric layer 46 and an upper electrode. 45. The upper electrode 45 and the lower electrode 42 are formed, for example, by forming a thick metal layer of gold or copper by electroplating as described above, and a polymer protective layer such as polyimine may be selectively formed on the capacitor element. The contact point of the capacitor element is connected to the external connection as described above, for example, (the contacts of the electric grid element are, for example, a downward connection, a top-to-bottom connection or an upward connection). The thickness of the lower electrode 42 is as described above. Between 5 μm and 2 μm, dielectric The thickness of 4 6 is, for example, between 5 〇〇 and 5 〇〇〇〇, and the thickness of the upper electrode 45 is, for example, between 〇 5 μm and 2 μm. As shown in Fig. 7a Forming the structure of the capacitor element on the protective layer has the following advantages: 1. The parasitic capacitance between the capacitor element and the underlying germanium substrate can be reduced. 2 • The electrode of the capacitor element can be formed by a thick metal layer, so that the capacitor element can be reduced. The resistance value can be applied especially in the field of wireless. The material can form a high dielectric constant between the upper electrode and the lower electrode of the capacitor element, such as titanium dioxide (Ti〇2) and pentoxide oxide. (Ta205), a high molecular polymer, a nitrogen ruthenium compound (Si3N4), or an oxonium compound (SiO2), etc., can increase the capacitance value of the capacitor element. The capacitive element as shown in Fig. 7a can also be formed on the polymer layer on the protective layer 18, the concept of which is similar to that described in Fig. 4, in which the inductive element is formed on the polymer layer on the protective layer. Structure. The dielectric layer 46 is made of a high dielectric constant material, for example, using chemical gas 1278984 --- case number > _ _ _ _ _ _ _ _ _ _ _ 5, invention description (23) deposition of nitrogen like deposition Antimony compound (Si 3N4), tetraethyl oxysulfonate (TEOS), pentoxide pentoxide (Ta 2 〇 5), titanium dioxide (Ti 〇 2 ), titanate (SrTiO 3 ) or oxynitride (Si 〇 ) N) and so on. 7b and 7c are schematic cross-sectional views showing the capacitor element. As shown in FIG. 7b, a thick polymer layer 20 can be formed on the protective layer 18, and the through-patterning process can cause the thick polymer layer 2 to expose the contact Μ, while the conductive layer 20 of the via hole The diameter is smaller than the diameter of the opening of the protective layer. However, in a preferred case, the via layer of the polymer layer 2 is connected to the opening speed of the protective layer, and the diameter of the via hole of the polymer layer 20 is larger than the diameter of the opening of the protective layer. By the configuration of the thick polymer layer 20, the arrangement of the lower electrode μ, the upper electrode 45 and the dielectric layer 46 can be moved upward by a distance equal to the thickness of the polymer layer 2〇, so that the capacitive element configuration can be further away from the substrate. local. As mentioned before, the thickness of the polymer layer 2, such as polyimine, can be between 2 microns and 150 microns. Thus, the distance between the capacitor element and the metal-line structure and the germanium substrate located in the lower layer can be increased, so that the parasitic capacitance can be greatly generated. · Figures 7a and 7c show that the contacts of the capacitive element are connected downwards, and the capacitive elements are also connected in an up-down manner, #第25图•示' or the capacitive elements are connected upwards. The upper electrode 45 of the capacitive element, as shown in Fig. 24b, can be connected upwards through a opening of the polymer layer on the upper electrode 45, as shown in the cross-sectional structure of Fig. 25. . The dielectric layer 35 is formed on the upper electrode 45 of the capacitive element, and is opened through the dielectric layer to expose the upper electrode 45 of the capacitive element, thereby

Page 27 1278984 __ Case No. 93111830 Noon Day Article 5, invention description (24) Road connection. A polymer protective layer (not shown) can be selectively formed on the capacitor elements as shown in Figs. 7a to 7c. Figure 8 is a schematic cross-sectional view of the substrate 1 . A protective layer 18 is formed on the substrate, and the resistive element 48 is tied to the protective layer 18. As will be appreciated by those skilled in the art, the resistive element is constructed of a material that provides electrical resistance and current can be retained by the material. The material of the resistive element 48 is, for example, a nitrogen compound (TaN), a nickel-chromium alloy (NiCr), a nickel-tin alloy (NiSn), a tungsten alloy, a titanium-titanium alloy (Tiw), and a titanium-nitrogen compound (TiN). , chromium (Cr), titanium (Ti), nickel (Ni) or button compound (TaSi) #. Among the above materials, nickel-chromium alloys can provide the best temperature coefficient of resistance (Temperature C-coefficient of Resistance). The length, thickness and width of the resistor element can be designed for different applications. I use the concept of arranging capacitive elements as shown in Figures 7a to 7c to remedy the resistive elements as shown in Fig. 8, wherein the resistive elements are formed in μ, Fig. 10; Formed in a thick polymer layer 20 in accordance with the present invention. By adding a resistance element... to the distance between the junction 16 and the bottom of the junction 16 (the added separation is substantially equal to the thickness of the polymer layer 2〇 and the parasitic capacitance effect between the substrate = the second low resistance element)

The power consumption of the underlying electrical performance can be improved in the high frequency operation such as the resistive element I^JT it # ° shown in Fig. 8, Fig. 9a and Fig. 9b. However, the resistive element is also 0" -- -- You can pick up the connection,

1278984 Case No. 93111830 _ 曰 曰 、 、, invention description (25) As shown in Figure 2.6, or the contact of the resistive element is connected upwards, which is not referred to The concept of connection. And another polymer layer can be selectively formed on the resistive element as shown in Fig. 8 and Fig. 9a and Fig. 9b, thereby protecting the resistive element. Referring to Figures 10 and 11, there is shown another process on the protective layer in accordance with the present invention. In this embodiment, the contact 16 can be electrically connected to the electronic component located thereon by forming a bump, such as an inductive component, a capacitive component, a resistive component, or other passive component. Electrical connection. The connecting metal 50 may be formed in the opening of the polymer layer, wherein the opening of the polymer layer is aligned with the opening of the smaller protective layer, so that the connecting metal 50 may be connected to the joint 16 as a bump underlayer-metal ( ϋβΜ). Using a conventional electroplating process, a ball-planting process, or a screen printing process, a bump can be formed on the under bump metal 5 ,, and after the flux is formed on the bump, a reflow step can be performed. Next, the fabricated electronic component 54 can be attached to the bump 52, wherein the finished electronic component 54 has solder 53 so that the bondability can be improved. The above process is similar to the surface adhesion technique commonly used in the bonding of electronic components to printed circuit boards. The finished electronic component 54 is, for example, an electrical sensing component, a capacitive component or a resistive component. Fig. 11 is a view showing the structure in which the completed electronic component 54 is directly formed on the protective layer 18 by using the bump 56 and the bump underlayer metal 5?. Since the completed electronic components are not formed on the printed circuit board as in the prior art, the completed electronic components as shown in FIGS. 10 and 11 have better performance and are not costly. . The bump underlayer metal 50 may be as shown in Fig. 12 to Fig. 23 of the present invention. 29·Ι Page 29 1278984 I-93UI830 - Day - knee 丨 not, 1-5, invention description (26) Metal of no Structure, however, if gold is used as the thick metal layer, the thickness of the under bump metal 50 may be between 0.1 micrometer and 2 micrometers. In the preferred case, the bump metal 50 is thinner. The size of the bump material in the vicinity of the interface of the under bump metal 5 具有 can be prevented from having a high concentration of gold. The above-described configuration of the passive components has at least the following advantages: 1. Passive components of the present invention by virtue of the fact that the fabricated electronic components can provide appropriate parameters 'and can be bonded to locations near the lines in the wafer. The design concept can achieve the performance of a truly systematic wafer. 2. Since the fabricated electronic component can be bonded to a position close to the line in the wafer, the occurrence of parasitic phenomena can be reduced. 3. In the present invention, 'the design can reduce the resistance effect of the fabricated capacitor element and the completed inductor element because the fabricated electronic component with appropriate design parameters can be selected to be mounted on the protective layer. More clearly, the following is a description of the prior art and the present invention: ^ The prior art uses a thin metal wire to make an inductive component, and if it is necessary to make a wider coil in order to reduce the resistance effect, This will increase the surface area of the inductive component. In addition, conventional techniques have a large parasitic capacitance of the inductive component and severe eddy current losses in the substrate.

However, in the present invention, a thick metal layer is used as the wiring, so that the resistance effect can be reduced. In addition, the polymer can also be trapped between the passive component and the underlying structure to reduce parasitic effects due to parasitic effects.

Η Page 30 1278984 _ Case No. 93118830_ Year Month Day Correction _ V. Invention Description (27) The resonance frequency is increased, so it is suitable for the operation of high frequency circuits. While the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of isolation is subject to the definition of the scope of the patent application. ‘

Page 31 1278984

[Simple description of the drawing] The connecting line of No. 383, No. 916 is formed on the thick polyimine. Fig. 1 is a schematic cross-sectional view showing the structure of the road according to the sixth paragraph of the U.S. Patent Publication. Fig. 2 is a schematic cross-sectional view showing the layer of the inductor element in accordance with the present invention. The top view is schematic. A schematic cross-sectional view of the substrate by a conductive material. Formed on the protective layer

FIG. 3 is a view showing a fourth embodiment of the inductive component in accordance with the present invention, wherein the inductive component is formed on the thick polyimide layer in order to prevent the inductive component from being affected in the lower layer. A schematic cross-sectional view of an inductive component in accordance with the present invention is shown. Fig. 5b (d) is a schematic cross-sectional view showing a plurality of inductance elements according to the present invention formed on an insulating layer such as a polymer. Figure 5c is a top view showing the formation of a plurality of inductive elements in accordance with the present invention on an insulating layer such as a high molecular polymer. Fig. 6a is a schematic cross-sectional view showing the formation of a transformer according to the present invention on an insulating layer such as a polymer, wherein the insulating layer is tied to the protective layer. #图图bb is a cross-sectional view of a transformer in accordance with the present invention, wherein the coils located below are tied to the protective layer. FIG. 6c is a perspective view of a solenoid-shaped inductor element according to another preferred embodiment of the present invention, wherein the inductor element is tied to the protective layer.

Figure 6d is a diagram showing the shape of a solenoid according to another preferred embodiment of the present invention.

Page 32 1278984

93111830 JE_L· 第 Modified 6th figure of the molecular polymer of the inductive element Fig. 0 6f drawing system 〇 6g drawing vertical figure 〇 Fig. 6h Fig. Fig. 6 is a cross-sectional view taken along line 6 f - 6 f in Fig. 6 e. The height is shown in Fig. 8 - 7a - 7C. The capacitor element according to the present invention is formed in an insulation such as I^1. A schematic cross-sectional view of the layer in which the insulating layer is at the % eucalyptus edge layer. The cross-section shows a forbearing circle formed on the protective layer by the resistive element according to the present invention. The figure of the parent and the figure 9 show that the resistive element according to the present invention is formed on the thick insulating layer of the sub-polymer, and the edge layer is on the protective layer. 〜 圃 圃 圃 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 纷 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 剖面 晶片 晶片 晶片 晶片 晶片 晶片 。 FIG. 1 is a cross-sectional view showing the structure of the wafer structure Μ Μ &amp; + im in accordance with the present invention. The electronic component produced by the ib is made of surface adhesive Du &amp;&amp; _ _ On its layer. Putian point technology is attached to protection

1278984 Case No. 93111830 a_a. 曰Revision Diagram Simple Description FIGS. 1 2 to 18 show schematic cross-sectional views of a metal structure made of gold in accordance with the present invention, wherein the metal structure is passed through, for example, a polymer. Insulation. Figs. 19 to 2 are schematic cross-sectional views showing a metal structure made of copper in accordance with the present invention, wherein the metal structure is passed through an insulating layer such as a polymer. Figures 24a through 24c illustrate another method of connecting an inductive component in accordance with the present invention. 25 and 26 respectively illustrate another method of connecting a capacitive element and a resistive element in accordance with the present invention. 12 14 18 19a 20a 23a 25a 27a Main component symbol description] 10: germanium substrate 11 inner dielectric layer metal/dielectric layer protective layer 19: inductive component polymer block via hole metal underlayer metal structure: transistor 13: metal Line 16: Electronic Contact: Opening 20: Polymer Layer 2 3: Via Metal 25: Underlying Metal Structure 27: Top Metal Structure 2 6: Line Top Metal Structure 28 Line 29: First Polymer Layer 22 Open π 30 : Path 32 Path 34: Path第34页

1278984 Case No. 93111830 曰Revision diagram simple explanation 35 : 36a 38 : 3 9 ·· 40a 41 : 42 ·· 43a 44a 46 : 48 : 52 ·· 54 : 56 : 62 : 66 : 80 ·· 82 : 85 : 87 : 90 : 94 : 100 104 Contact lower electrode : Contact : Conductive sheet Dielectric layer resistor element bump dielectric layer 3 6 : Opening : Opening 37 : Opening opening 38a : Opening contact 4 0 · Inductive component: An inductance element 40b: a second inductance element 41a, a contact 43: a junction 44: a conductor 4 5: an upper electrode 4 7 : a second polymer layer 50: a connection metal 53: a solder bump having been fabricated 6 0 : bottom layer coil upper layer coil 64: polymer layer opening 6 8 : inductance element substrate 8 1 : metal contact opening 8 4 : protective layer side wall 8 6 : polymer layer opening 88 : adhesion/barrier layer seed layer 92: Thick metal layer photoresist 95a: photoresist adhesion/barrier layer 1 0 2 : seed layer thick metal layer 106: metal top layer

Page 35

Claims (1)

1278984 931Π83Π年月一曰 Amendment VI. Patent Application Range 1 • An electronic component comprising: a semiconductor substrate; a first coil positioned on the semiconductor substrate; and a second coil positioned on the first coil. Further comprising a 0 wherein the poly is the poly 2, as described in the patent application, the electronic component, the polymer layer is located between the first coil and the second coil. The electronic component according to item 2, wherein the material of the composite layer comprises a polyimide. 4. The electronic component according to claim 2, wherein the material of the layer comprises Benzocyclobutene (BCB) 〇5. The electronic component according to claim 2, wherein The material of the polymer layer includes a polyarylene ether. 6. The electronic component of claim 2, wherein the material of the polymer layer comprises an epoxy-based material. 7. The electronic component of claim 1, further comprising a polymer layer positioned between the first coil and the semiconductor substrate. 8. The electronic component of claim 7, wherein the material of the polymer layer comprises p〇lyimide. 9. The electronic component according to claim 7, wherein the material of the polymer layer comprises phenylcyclobutene (BCB) 〇1 0 as described in claim 7 Electronic component Page 36 1278984 Amendment ----- Case No. 93118830 _ 曰 曰 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Item 7 of the electronic component, wherein the material of the layer comprises an epoxy resin-based (ep〇xy_based) material 12, such as the electronic component described in claim &quot; The thickness of the σ layer is between 2 μm and 丨 5 〇. 13. The electronic component of claim 1, further comprising a film layer and a protective layer, the film layer layer The protective layer is on the thin film circuit layer, and the first coil is on the edge layer. ▲ 1 4 An electronic component as described in claim 13 wherein the protective layer is closest to the top portion and contains a nitrogen enthalpy into the &quot; one of the insulating layers. Top and contains an insulating layer of oxygen, ^ The electronic component according to the first aspect of the invention, wherein the first component comprises the electronic component according to claim 1, wherein the first component comprises A metal layer, the material of which comprises gold. The electronic component of claim 17, wherein the metal layer has a thickness of between 1 micrometer and 20 micrometers. The electronic component of claim 17, wherein the first coil further comprises an adhesive/barrier layer under the metal layer, and the 1278984 Correction &gt;, application patent range adhesion (the material of the barrier layer includes titanium tungsten alloy. The first coil package includes the electronic component described in claim 1 of the patent scope, 21 ^ genus layer, the metal layer The material includes copper. The thickness of the electronic component U described in the second aspect of the patent layer is between 3 micrometers and 2 micrometers. The first coil patent scope is described in item 20. An electronic component, wherein the adhesion/barrier layer 2; a Zhe adhesive/barrier layer, is located under the metal layer, and the material of the p-earth layer comprises titanium. wherein the first, wherein the one of the Wherein the second 蠄® β A , M ≤ - ⁄4 兀忏, wherein the adhesion/barrier layer' value is under the metal layer, and the material of the viscous/barrier layer comprises titanium. Components, including · 2 lines of 3 packages, including the electronic components described in the application/Sili scope item 1, 4 including a metal layer, the material of which includes gold, metal/2° patent application scope 23 The thickness of the electronic component 曰 described in the item is between 1 μm and 2 μm. 2. For the electronic component described in claim 23, wherein the adhesive/resistance@匕包括&quot;'adhesive/barrier layer is located under the metal layer, and the material of the P and P early layers includes Titanium-tungsten alloy. Two-wire 2, such as the electronic component described in claim 1, e L includes a metal layer, and the material of the metal layer includes copper. Reference metal:: claim patent claim 26 The thickness of the electronic component layer is between 3 micrometers and 20 micrometers. 28. The electronic component-semiconductor substrate of claim 26; Page 38 1278984 Case No. 93111830 VI. Patent Application A dielectric element is positioned on the semiconductor substrate such that a dielectric layer of the capacitor ridge comprises a high molecular polymer. 30. The electronic component of claim 29, wherein the material of the semiconductor substrate comprises germanium. The electronic component of claim 29, further comprising a thin film wiring layer and a protective layer on the semiconductor substrate, wherein the protective layer is on the thin film wiring layer, The capacitive element is located on the protective layer. v I The electronic component of claim 31, wherein the protective layer comprises an insulating layer which is closest to the top under the capacitive element and contains a nitrogen-niobium compound. The electronic component of claim 3, wherein: the 6 layers comprise the closest to the top under the capacitive element and comprise an yttria-based insulating layer. The electronic component of claim 31, further comprising a σ layer, wherein the polymer layer is on the protective layer, and the capacitive element is only on the polymer layer. The electronic component of claim 34, wherein the material of the layer comprises polyimine (ρο 1 y i i i de). 36. The material of the electron cell gCB 9 as described in the scope of the patent application includes phenylcyclobutene (36112 0〇7 (:1〇131^6116, 聚人37·electronics as described in claim 34) The component, wherein the material of the character layer comprises a polyarylene ether. Page 39 1278984 曰_Revision----i No. 93111R3D VI. Patent Application No. 3 8 · According to the patent application scope, the electronic component described in Item 34 (Epoxy-based) material 0. The electronic component of claim 4, wherein the polymer layer has a thickness of between 2 micrometers and 15 micrometers. The electronic component of claim 29, further comprising a polymer layer on the capacitor element. The electronic component of claim 4, wherein the material of the ruthenium polymer layer comprises polyimide. 42. The electronic component of claim 4, wherein an opening is in the polymer layer and the second electrode is exposed. 43. The electronic component of claim 29, wherein the thickness of one of the electrodes of the capacitive component is between 0.5 and 20 micrometers. 44. The electronic component of claim 29, wherein the dielectric layer has a thickness of between 5 angstroms and 5 angstroms. ^ 45. An electronic component comprising: a semiconductor substrate; and wherein the capacitor element is disposed on the semiconductor substrate. A material of the dielectric layer comprises nitrogen. 46. The material of the semiconductor substrate, as described in claim 45, includes a dream. 47. The electronic component of claim 45, wherein the thin circuit layer and a protective layer are on the substrate, the protective layer is located at On the film circuit layer, the capacitor component is located at 1278984 ------ Case No. 93111R3n_ ??? 48. The electronic component of claim 47, wherein the protective layer comprises an insulating layer which is closest to the top under the capacitive element and contains a nitrogen cerium compound. 4. The electronic component of claim 47, wherein the protective layer comprises an insulating layer closest to the top under the capacitive element and comprising an oxonium compound. An electronic component as described in claim 47 of the patent application, including The layer of material 'the polymer layer is on the protective layer, and the capacitor element is on the polymer layer. 1 5 1 The electronic component of claim 50, wherein the material of the ruthenium layer comprises polyimide. 52. The electronic component of claim 5, wherein the material of the /LLw jp mouth comprises phenylcyclobutene (66112〇〇7〇:1〇1)1^61^, 53· The electronic component of claim 5, wherein the material is a polyarylene ether. 54. The electronic component of claim 5, wherein the material of the n comprises an epoxy-based material. 55. The electronic component of claim 5, wherein the electronic component is as described in claim 5, Wherein the thickness of the composition Γ Μ AA T- @ is between 2 microns and 150 microns. C η _ • The electronic component of claim 45, further comprising a chelating layer positioned on the capacitive element. 1278984 Case No. 931〗 S3n Year Month 修正 Amendment 6. Patent Application Range 5 7 · The electronic component described in claim 56, wherein the material of the polymer layer comprises polyimide. 58. The electronic component of claim 56, wherein an opening is in the polymer layer and the second electrode is exposed. The electronic component of claim 45, wherein the thickness of one of the electrodes of the capacitive element is between 〇 5 μm and 2 μm. 60. The electronic component of claim 45, wherein the dielectric layer has a thickness between 5 〇 〇 and 5 〇 〇 〇 。. An electronic component comprising: a semiconductor substrate; and a capacitive component disposed on the semiconductor substrate, wherein a material of the dielectric layer of the capacitive component comprises strontium (Sr)e, 62. The electronic component of item 61, wherein the material of the semiconductor substrate comprises germanium. The electronic component of claim 61, further comprising a thin tantalum circuit layer and a protective layer, wherein the thin film wiring layer is on the semiconductor base =, the protective layer is on the thin film wiring layer , the capacitor element is on the protective layer. 64. As described in the scope of claim 63, = the bottom of the capacitive element is closest to the top and contains nitrogen ▲ 6 ^ · as described in the scope of claim 63, the SI:: under the capacitive element Near the top and containing oxygen complexes 1278984 The electronic component of the invention of claim 63, further comprising the polymer layer on the protective layer on the oyster polymer layer. In the case of the electronic component described in claim 66, the material of the mouthpiece includes polyimide.聚 a 如 a as claimed in claim 66 of the electronic components, wherein the Be. The material of θ includes a benzocyclobutene (Benzocyclobutene), such as the electronic component described in claim 66, wherein the material of the mouthpiece layer comprises a polyarylene ether (parylene). The electronic component of claim 1, wherein the material of the material comprises an epoxy-based material, and the electronic component according to claim 66, wherein the polymer The thickness of the layer is between 2 micrometers and 150 micrometers. 72. The electronic component according to claim 61, further comprising a layer of the compound, located on the capacitor element. 73. The electronic component of claim 72, wherein the material of the polymer layer comprises a polyimide. The electronic component of claim 72, wherein the opening is in the polymer layer. The electronic component of claim 61, wherein the thickness of one of the electrodes of the capacitive element is between 5·5 μm and 2 μm. Apply for the electricity mentioned in item 61 of the patent scope Element, where the 1278984 VI. Scope of Application 曰 Correction The thickness of the dielectric layer is between 500 angstroms and 50,000 angstroms. The electronic component of claim 61, wherein the material of the dielectric layer comprises barium titanate (SrTi03). 78. An electronic component comprising: a semiconductor substrate; and a capacitive component disposed on the semiconductor substrate, wherein a material of the dielectric layer of the capacitive component comprises germanium. 79. The electronic component of claim 78, wherein the material of the semiconductor substrate comprises germanium. 80. The electronic component of claim 78, further comprising a thin germanium circuit layer and a protective layer, the thin film wiring layer being on the semiconductor substrate, the protective layer being on the thin film wiring layer, The capacitive element is located on the protective layer. The electronic component of claim 80, wherein the protective layer comprises a tantalum insulating layer which is closest to the top under the capacitive element and contains a nitrogen cerium compound. The electronic component of claim 80, wherein the protective layer comprises the closest to the top under the capacitive element and contains an oxonium compound&quot;/insulation layer. 83. The electronic component of claim 80, wherein a polymer layer is disposed on the protective layer on the polymer layer. The electronic component is as described in claim 83. The material of the polymer layer includes polyfluorene (P〇lyimide). Dan 1278984 85. The electronic component according to claim 83, wherein the material of the 8^卩1 layer comprises phenylcyclobutadiene (ugly 6112〇£^(11〇乜1^6116, 86·如The electronic component of claim 83, wherein the material of the polymer layer comprises a polyarylene ether. The electronic component of claim 83, wherein the layer is The material includes an epoxy-based material. The electronic component of claim 83, wherein the polymer layer has a thickness of between 2 micrometers and 150 micrometers. 89. The electronic component of claim 78, further comprising an I layer disposed on the capacitor element. The electronic component of claim 89, wherein The material of the polymer layer comprises a polyimine (|) 〇 17 丨 111 丨 (^). 91. The electronic component of claim 89, wherein an opening is in the polymer layer and exposed The second electrode is as described in claim 78, wherein the electronic component described in claim 78, wherein The thickness of one of the electrodes of the capacitor element is between 5·5 μm and 2 μm. The metal element according to claim 78, wherein the thickness of the dielectric layer is between The electronic component of claim 78, wherein the material of the dielectric layer comprises a nitrogen ruthenium compound. 95. For example, the application scope is 78. The electronic component of the item, wherein the material of the dielectric layer comprises an oxonium compound. 1278984 The electronic component of claim 78, wherein the material of the dielectric layer comprises a oxynitride compound (Si ON). 97. The electronic component of claim 78, wherein the material of the dielectric layer comprises tetraethyl oxymethane (TEOS). An electronic component comprising: a semiconductor substrate; a thin germanium circuit layer on the semiconductor substrate; a protective layer on the thin film circuit layer; A passive component is placed on the protective layer; and a contact is located on the protective layer and is used to connect a wire through the process. 99. The electronic component of claim 98, wherein the passive component comprises an inductive component. The electronic component of claim 98, wherein the passive component comprises a metal layer, and the material of the metal layer comprises gold. The electronic component of claim 1, wherein the metal layer has a thickness of between 1 micrometer and 20 micrometers. The electronic component of claim 1, wherein the passive component further comprises an adhesive/barrier layer disposed on the metal layer, and the adhesive/barrier layer material comprises titanium Tungsten alloy. 103. The electronic component of claim 98, wherein the passive component comprises a metal layer, the material of the metal layer comprising copper. , "Hai 1〇4 · As claimed in the electronic component of claim 103, the thickness of the metal layer is between 3 microns and 20 microns., 1278984 ---- Case No. 931〗 1 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The material of the adhesive/barrier layer comprises titanium. The electronic component of claim 98, further comprising a polymer layer on the passive component and an opening in the polymer And the electronic component described in claim 1, wherein the material of the one layer comprises polyimide. Φ 108 · as claimed in the patent scope The electronic component of claim 98, further comprising a polymer layer positioned between the passive component and the protective layer and between the contact and the protective layer. $109. The electronic component as claimed in claim 108 , wherein ^^. The material of the layer includes polyimine (0〇13^111丨(16). 11 0. The electronic component described in claim 108, wherein the material of the child is Dm, the material of the genus includes Benzocyclobutene (Benzocyclobutene, the poly 1 ^ 1 · as claimed in the scope of patent The electronic component of item 108, wherein the material of the f layer comprises a polyarylene ether. The electronic component described in claim 1 is as claimed in claim 1, wherein the material = layer The material includes an epoxy-based 113. The electronic component as described in claim § 〇8, wherein the alpha compound exhibits a thickness of 11 μg between 2 μm and 150 μm. Between the electronic components described in claim 9 of the patent scope, wherein 1278984 The material of the semiconductor substrate includes germanium. The electronic component of claim 98, wherein the protective layer comprises an insulating layer that is closest to the top under the passive component and contains an oxonium compound. 116. The electronic component of claim 98, wherein the protective layer comprises the one closest to the top under the passive component and contains nitrogen oxide: one of the insulating layers. The electronic component described in claim 98, wherein the β &quot; is connected to one of the input/output terminals of the passive component. 118. The electronic component of claim 117, wherein another input/output terminal of the movable component is connected to one of the contact layers of the thin film circuit layer, and an opening in the protective layer exposes the thin film circuit layer The one should be included in the boundary.) The 119·moving element 1 2 0 · such as a bump, a road. 121. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; An electronic component according to the eleventh item of the patent application, the other input/round end of the passive component is connected to the electronic component described in the claim 11th, and the other input/output is The end system is connected to an external circuit by using a one-wire system. a method for forming a circuit layer, comprising: a metal layer; a pattern defining layer on the metal layer, in the pattern - Page 48 1278984 " _ Case No. 93111830_年月日_ Amendment 1-6, an opening in the patent application scope exposes the metal layer; forming a gold layer on the metal layer exposed by the opening; removing the pattern Defining a layer; and removing the metal layer not under the gold layer, wherein the circuit layer is used to connect a wire bonding wire formed by a wire bonding process. 1 2 3. The circuit of claim 122 The layer forming method 'in which the metal layer is formed by physical vapor deposition. 124. The circuit layer forming method according to claim 122, wherein the material of the metal layer comprises a titanium tungsten alloy. The method for forming a circuit layer according to claim 122, wherein the pattern defining layer comprises a photoresist layer. 1 2 6 · The method for forming a circuit layer according to claim 122 of the patent application Forming the gold layer on the metal layer exposed by the opening. The method for forming a circuit layer as described in claim 122, wherein the thickness of the gold layer is The method of forming a circuit layer according to claim 122, wherein the circuit layer is formed on a semiconductor wafer. 129. The circuit layer forming method, wherein the circuit layer is formed on a semiconductor wafer, the semiconductor crystal 1 comprises a semiconductor substrate, a thin film wiring layer and a protective layer, and the thin film and the interlayer are on the semiconductor substrate. The protective layer is on the thin film circuit layer, and the metal layer is formed on the protective layer. 130. The circuit layer forming party as described in claim 122 1278984 Amendment 曰 _tE 93111^0 6. Patent application method, wherein the circuit layer is formed on a semiconductor substrate, wherein the material of the semiconductor substrate comprises hair. 131. The circuit layer forming layer according to claim 122 is formed on a semiconductor wafer, the semiconductor crystal, the substrate: a film, a thin film layer and a protective layer, and the film On the semiconductor substrate, the protective layer is formed on the protective layer on the thin film wiring layer, wherein the protective layer comprises an insulating layer which is closest to the top under the wiring layer and contains a nitrogen compound. 132. The circuit layer forming intermediate layer system according to claim 122 is formed in a semiconductor, the semiconductor wafer includes a semiconductor substrate, a thin film wiring layer and a protective layer, and the film is formed on the conductive substrate. The protective layer is formed on the protective layer on the thin film wiring layer, and the protective layer includes an insulating layer which is closest to the top under the wiring layer and contains an oxygen spade compound. Method H t:: The circuit layer forming party described in the item 122 of the patent range wherein the &amp; metal layer is formed on a polymer layer. 134. The circuit layer forming body according to claim 122, wherein the metal layer is formed on the polymer layer and filled in an opening in the material layer. 135. A passive component forming method, comprising: forming a first metal layer; a layer of a mi layer on the first metal layer, an opening in the pattern defining layer exposing the first metal layer;帛—the metal layer exposed in the opening, the first metal layer Η9, page 50, 1278984 ---- Wei 9311, the soap, the moon, the sixth, the patent application - remove the pattern definition layer; and remove the The first metal layer under the second metal layer. The method of forming a passive component according to claim 135, wherein the first metal layer is formed by physical vapor deposition. The method of forming a passive component according to claim 135, wherein the material of the first metal layer comprises a titanium tungsten alloy. 138. The passive component forming method of claim 135, wherein the material of the first metal layer comprises titanium. The passive component forming package described in claim 135, wherein the pattern defining layer comprises a photoresist layer. 140. The passive component forming unit as described in claim 135, wherein the second metal layer is formed on the first metal layer exposed by the opening by electroplating. The method of forming a passive component as described in claim 1 wherein the material of the second metal layer comprises gold. 142. The passive component forming body as described in claim 135, wherein the material of the second metal layer comprises copper. 143. The method of forming a passive component according to claim 135, wherein the thickness of the second metal layer is between 1 micrometer and 20 micrometers. 144. The passive component forming party of claim 135, wherein the passive component is formed on a semiconductor wafer. 145. Passive component forming party as described in claim 135 Page 51, 1278984 θ Amendment No. 93111830 /, the patent application method, wherein the passive component is formed on a semi-conductive wafer including a semiconductor substrate, a thin crucible, on the semi-conducting layer, the W protective layer The first metal layer is formed on the protective layer on the thin film wiring layer. The method of forming a passive component as described in Item 135 of the specification, wherein the passive component is formed on a semiconductor substrate, wherein the material of the semiconductor substrate comprises germanium. The method of forming a passive component according to claim 135, wherein the passive component is formed on a semiconductor wafer, the semiconductor wafer comprising a semiconductor substrate, a thin film wiring layer and a protective layer, the film a circuit layer is on the semiconductor substrate, the protective layer is on the thin film circuit layer, and the first metal layer is formed on the protective layer, wherein the protective layer is disposed closest to the top under the passive component and contains nitrogen lanthanum An insulating layer of one of the compounds. 148. The passive component forming method of claim 135, wherein the wiring layer is formed on a semiconductor wafer, the semiconductor wafer comprising a semiconductor substrate, a thin film wiring layer and a protective layer, the thin film wiring a layer on the semiconductor substrate, the protective layer being on the thin film wiring layer, the metal layer being formed on the protective layer, wherein the protective layer comprises the closest to the top under the passive component and containing an oxygen stone compound One of the insulation layers. 149. The circuit layer forming method of claim 135, wherein the first metal layer is formed on a polymer layer. The method of forming a passive component according to claim 135, wherein the first metal layer is formed on a polymer layer and is filled in position on page 52, 1278984, Revision A, 93111830. The patent application covers an opening in the polymer layer. The method of forming a passive component according to claim 135, wherein the passive component comprises an inductive component. 152. An electronic component, comprising: a semiconductor substrate; a conductive sheet on the semiconductor substrate; and an eighty passive component on the conductive sheet, wherein the passive component is more than fifty The conductive sheet is present between the semiconductor substrates, wherein the thickness of the conductive sheet is greatly corrected by micron. </ RTI> </ RTI> </ RTI> 153. The electronic component of claim 152, wherein the conductive sheet is present between the surrounding area of the broken element and the semiconductor substrate. 154. The electronic component of claim 152, wherein the passive component comprises an inductive component. 155. The electronic component of claim 152, further comprising a polymer layer positioned between the conductive sheet and the passive component. The electronic component of claim 155, wherein the material of the polymer layer comprises a polyimide. 157. The electronic component of claim 155, wherein the material of the t-layer comprises Benzocyclobutene (BCB) 〇 158. The electrons as described in claim 155 The component, wherein the material of the ruthenium polymer layer comprises a polyarylene ether. 1 5 9 · The electronic component of claim 155, wherein Page 53 1278984 曰i No. 9311〗 83f) VI. The material of the patented application layer includes epoxy resin based on the epoxy resin (as described in claim 155). The thickness of the layer is between 2 micrometers and 丨5 micrometers. 1 6 1 · The film layer is on the semiconductor substrate according to the second to tenth described in the 52nd patent application. On the film circuit layer, the conductive sheet is on the protective layer. /... 162. The electronic component as described in claim 16th, = the top of the electronic component and containing nitrogen, compound 163 An electronic component as claimed in claim 161, wherein the protective layer comprises an insulating layer closest to the top portion of the electronic component. a aerobic deuteration I 164. The electronic component, the material of the semiconductor substrate comprises: 甲16. The electronic component of claim 152, wherein the passive component comprises a metal layer, and the material of the metal layer comprises gold. 166·If applying The electronic component of claim 165, wherein the metal layer has a thickness of between 1 micrometer and 2 micrometers. 1 67. The electronic component of claim 165, wherein the passive component is further An adhesive/barrier layer is disposed under the metal layer, and the material of the adhesion/barrier layer comprises a titanium-tungsten alloy. 168. The electronic component of claim 152, wherein 1278984 A. The passive component includes a metal layer, and the material of the metal layer includes steel. 169. The electronic component of claim 168, wherein the metal layer has a thickness of between 3 micrometers and 20 micrometers. The electronic component of claim 168, wherein the passive component further comprises an adhesive/barrier layer under the metal layer, and the material of the adhesive/barrier layer comprises And the electronic component of the invention, wherein the conductive sheet comprises a metal layer, the metal layer is made of gold. 172. The electron according to claim 171 Component thickness of the metal layer The system is between 1 micron and 20 micron. : 173. The electronic component of claim 171, wherein the electric sheet further comprises an adhesive/barrier layer, and the material of the adhesive/barrier layer under the metal layer comprises a titanium-tungsten alloy. 174. The electronic component to conductive sheet of claim 152, wherein the conductive layer comprises a metal layer, the material of the metal layer comprises steel 175. The electronic component and the thickness layer of the genus layer according to claim 174 of the patent application. Between 3 microns and 20 microns. : The electronic component of claim 174, which is incorporated herein, and wherein: 17^ an electronic component comprising: a semiconductor substrate; a conductive sheet on the semiconductor substrate; and - a coil On the conductive sheet, where the coil is five percent of which is liE^i, page 55, 1278984 ----- case number 93111830', the date of the patent, and the semiconductor substrate The conductive sheet is present between the conductive sheets, wherein the conductive sheet has a thickness greater than 1 micrometer. 178. The electronic component of claim 77, wherein the conductive sheet is present between a surrounding area of the coil and the semiconductor substrate. The electronic component of claim 177, wherein the coil comprises an inductive component. 180. The electronic component of claim 177, further comprising a polymer layer positioned between the conductive sheet and the coil. The electronic component of claim 180, wherein the material of the polymer layer comprises poly imi de. 182. The electronic component of claim 180, wherein the material of the polymer layer comprises phenylcyclobutene (661120〇7 (:1〇131^6116, BCB) ° 183. The electronic component of claim 180, wherein the polymer material comprises a polyarylene ether (Parylene). The electronic component of claim 180, wherein the polymer material comprises a ring. An epoxy-based material. The electronic component of claim 180, wherein the polymer layer has a thickness of between 2 micrometers and 150 micrometers. The electronic component of claim 177, further comprising a film/film circuit layer and a protective layer, wherein the film circuit layer is located on the semiconductor conductor; and the film circuit layer is on the semiconductor substrate. Page 56 1278984 -----9311 Discussion __年月日日 You, no __ Six, the scope of application for patents On the film circuit layer, the conductive sheet is located on the protective layer. 187. The electronic component of claim 186, wherein the protective layer comprises an insulating layer that is closest to the top of the electronic component and contains one of the nitrogen bismuth compounds. 188. The electronic component of claim 186, wherein the protective layer comprises an insulating layer closest to the top of the electronic component. The material of the semiconductor substrate includes the crucible. The material of the semiconductor substrate includes the crucible. The material of the semiconductor substrate includes the crucible. 190. The electronic component of claim 177, wherein the coil comprises a metal layer, and the material of the metal layer comprises gold. ^ 191. The electronic component of claim 190, wherein the metal layer has a thickness of between 1 micrometer and 20 micrometers. 192. The electronic component of claim 19, wherein the coil further comprises an adhesive/barrier layer under the metal layer, and the material of the barrier layer comprises a titanium alloy. 1 93. The electronic component of claim 177, wherein the coil comprises a metal layer, and the material of the metal layer comprises copper. 194. The electronic component according to claim 193, wherein the thickness of the metal layer is between 3 micrometers and 20 micrometers. 195. The electronic component of claim 193, wherein the coil further comprises an adhesion/barrier layer, and the material of the barrier layer comprises titanium. Added 1 96. Electronic components as described in claim 177 1278984 Sixth, the scope of application for patents 瀛 conductive sheet includes a metal, 197· such as the sergeant main straight 2 ° Hai metal layer material including gold (where and among them and the metal sound! Γ Scope 196 The thickness of the electronic component 曰 is between 丨 micrometer and 20 micrometers. The conductive sheet $ t ΐ the electronic component adhesion/resistance r, the wide-covering/blocking 4, in the patent range 196, is located at The material of the underlying layer of the underlying layer of the metal layer comprises a titanium-tungsten alloy. The electrode of the metal layer is: 99. The electronic component described in the item 177: the layer of the metal layer comprises copper. • The electronic component of the electronic component described in the scope of claim 1-9 is between 3 micrometers and 20 micrometers. 201• The electronic component described in claim 199, the conductive sheet further includes An adhesive/barrier layer, the material of the adhesion/barrier layer of the metal layer comprises titanium. 202. An electronic component comprising: a semiconductor substrate; and a resistive component on the semiconductor substrate, wherein the material Including nickel. /Resistance 7C piece 203·如Please refer to the electronic component described in Item 2〇2 of the patent, and the material of the semiconductor substrate includes Shi Xi. '204. The electronic component as described in claim 202, including a thin film circuit layer and a protective layer, The film line is layered on the semiconductor substrate, the protective layer is on the film circuit layer, and the resistor is on the protective layer. The device is located at 205. As described in claim 2, item 4 Electronic component, Ganzi Page 58 1278984 Π----it 93111830__年月日日筱γρ _ VI. Patent scope*--- 二保”蒦 layer includes the insulating layer closest to the top of the electronic component and containing a nitrogen bismuth compound _ 2/6. The electronic component of claim 204, wherein the 保 蒦 layer comprises the insulating layer closest to the top of the electronic component and containing one of the oxonium compounds. 207. The electronic component of claim 2, wherein the polymer layer is disposed on the protective layer, the resistive element being on the polymer layer. : X 208. The electronic component of claim 1, wherein the material of the § 1 σ layer comprises polyimide. The electronic component of claim 2, wherein the material of the σ layer comprises benzocyclobutene ( ▲ ^ 210 · as described in claim 207 The electronic component, wherein the material of the 5 kel polymer layer comprises a polyarylene ether (parylene). 211. The electronic component according to claim 2, wherein the material of the poly σ layer comprises epoxy. An epoxy-based material. The electronic component of claim 207, wherein the polymer layer has a thickness of between 2 micrometers and 150 micrometers. The electronic component of claim 2, further comprising a polymer layer disposed on the resistive component. 214. The electronic component of claim 213, wherein the material of the polymer layer comprises Polyimine. Page 59 1278984 --- plug: No. 93111830 Che Yueyue _ Amendment VI, the scope of application for patents 2 1 5 · The electronic component described in the scope of claim 2, wherein one of the openings is in the polymer layer and exposed The resistive element is removed. 216. The electronic component of claim 2, wherein the material of the resistive element comprises a nickel-chromium alloy. , 217. The electronic component of claim 202, wherein the material of the resistive element comprises a nickel-tin alloy. 218. An electronic component comprising: a semiconductor substrate; and II a resistive component on the semiconductor substrate, wherein the resistive component 'The material includes titanium. 219. The electronic component of claim 218, wherein the material of the semiconductor substrate comprises a stone eve. The electronic component of claim 218, further comprising a film circuit layer and a protective layer, the film circuit layer being on the semiconductor substrate, the protective layer being on the film circuit layer, The resistive element is located on the protective thickness. 221. The electronic component of claim 22, wherein The protective layer includes an insulating layer closest to the top of the electronic component and containing one of the ruthenium hydride compounds. The electronic component of claim 22, wherein the protective layer comprises an insulating layer closest to the top of the electronic component and containing one of the oxygen stone compounds. ^ 2 2 3 · The electronic component of claim 2, further comprising a polymer layer on the protective layer, the resistive element being in the polymerization Page 60 1278984 A case number VI. The scope of the patent application is on the physical layer. 224. The electronic component of claim 223, wherein the material of the layer of σ ^ σ includes polyimide. ^ 225. The electronic component of claim 223, wherein the material of the "Hei kou layer" comprises phenylcyclobutanide (BenZ〇Cycl〇b Utene, BCB) 〇 2 26 · as claimed in the scope of the 223th The electronic component of the item, wherein the material of the polymer layer comprises a polyarylene ether. The electronic component of claim 223, wherein the material of the polymer layer comprises an epoxy-based material. 228. The electronic component of claim 223, wherein the polymer layer has a thickness between 2 microns and 150 microns. 22 9. The electronic component of claim 21, further comprising a polymer layer on the resistive element. The electronic component of claim 229, wherein the material of the polymer layer comprises p〇lyimide. 231. The electronic component of claim 229, wherein the @ opening is in the polymer layer and the resistive element is exposed. 2 3 2 The electronic component of claim 21, wherein the material of the resistive element comprises a titanium tungsten alloy. 2 3 3. The electronic component according to claim 218, wherein the material of the resistive element comprises a titanium nitride compound 234, an electronic component, including 1278984 Case No. 93111 rib η VI. Patent application scope A semiconductor substrate; with a resistive component, the material in the position includes a button. 2 3 5 · If the patent application is applied to the semiconductor substrate 2 3 6 · If the patent application includes a thin film circuit layer and a protective substrate, the protective layer is on the protective layer. 2 3 7 · As in the patent application, the protective layer is included in an insulating layer of the electronic material. 2 3 8. As claimed in the patent specification, the protective layer is included in an insulating layer of the electronic material. 2 3 9 · If the patent application is a polymer layer, it is located on the layer. 2 4 0 · If the material of the polymer layer is included in the patent application, the material of the polymer layer includes 241. The material of the polymer layer includes BCB) 〇 2 4 2 · as claimed in the patent specification and the semiconductor substrate, wherein the resistor The electronic components described in Item 234 of the Yuan Dynasty, including the brackets. The electronic component of claim 234, further comprising a protective layer disposed on the semiconductor circuit layer, wherein the resistive component is located in the electronic component of item 236, wherein the component is closest to the top And an electronic component according to Item 236 of the present invention, wherein the electronic component described in item 236 of the oxidizing compound is closest to the top and further comprises a protective layer on the protective layer. The electronic component of the item, wherein poly imide. The electronic component of item 239, wherein the electronic component described in Benzocyclobutene </ br> Page 62 1278984 ----- Bullhorn 93111830 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 243. The electronic component of claim 239, wherein the material of the a layer comprises a material based on epoxy resin (ep〇Xy_baSed). 244. The electronic component of claim 23, wherein the polymer layer has a thickness between 2 microns and 15 microns. 245. The electronic component of claim 234, further comprising a polymer layer positioned on the resistive element. The electronic component of claim 245, wherein the material of the polymer layer comprises p〇lyimide. 247. The electronic component of claim 245, wherein an opening is in the polymer layer and the resistive element is exposed. 248. The electronic component of claim 234, wherein the material of the resistive element comprises a button compound. 249. An electronic component comprising: a semiconductor substrate; and a resistor component positioned on the semiconductor substrate, wherein the resistive component is made of tin. φ 2 5 0 The electronic component of claim 2, wherein the material of the semiconductor substrate comprises Shi Xi. The electronic component of claim 249, further comprising a thin film circuit layer and a protective layer, the thin film wiring layer being on the semiconductor substrate, the protective layer being located on the thin film circuit layer The resistor element is located on the protective layer. Page 63 1278984 252. The electronic component of claim 251, wherein the protective layer comprises an insulating layer closest to the top germanide in the electronic component, as described in claim 251. An electronic component, the protective layer comprising an insulating layer closest to the top of the electronic component and containing one of the characters. The electronic component of claim 251, further comprising a polymer layer on the protective layer, the resistive element being on the polymeric p layer. 255. The electronic component of claim 254, wherein the material of the polymer layer comprises p〇lyimide. 256. The electronic component of claim 254, wherein the material of the polymer layer comprises phenylcyclobutene (861^〇〇7(:1〇1)1^61^, BCB). 257. The electronic component of claim 254, wherein the material of the polymer layer comprises a polyarylene ether. 258. The electronic component of claim 254, wherein the material of the polymer layer comprises an epoxy-based material. 259. The electronic component of claim 2, wherein the polymer layer has a thickness between 2 microns and 丨5 microns. 260. The electronic component of claim 249, further comprising a polymer layer positioned on the resistive element. 261. The electronic component of claim 26, wherein Page 64 1278984 ____ Case No. 93111830 Noon Day - Amendment - __ VI. Patent Application The material of the polymer layer includes polyimide. 262. The electronic component of claim 260, wherein an opening is in the polymer layer and the resistive element is exposed. 263. An electronic component comprising: a semiconductor substrate; and a resistive component on the semiconductor substrate, wherein the resistive component is made of a crane. The electronic component of claim 263, wherein the material of the semiconductor substrate comprises germanium. The electronic component of claim 263, further comprising a thin film circuit layer and a protective layer, the thin film circuit layer being on the semi-conductive substrate, the protective layer being located on the thin film circuit layer The resistor element is located on the protective layer. The electronic component of claim 265, wherein the protective layer comprises an insulating layer which is closest to the top of the electronic component and contains a nitrogen compound. The electronic component of claim 265, wherein the protective layer comprises one of the closest to the top of the electronic component and comprises an oxygen stone. The electronic component of claim 265, further comprising a polymer layer on the protective layer, the resistive element being located on the &lt;polymer layer. The electronic component of claim 268, wherein the material of the polymer layer comprises polyimide. , Page 65 1278984 Case No. 93111 Milk η Patent Application _ ¥ 〇 · For example, the electronic components described in the scope of the patent application, Β^β&gt; The material of the enamel layer includes Benzocyclobutene (Benzocyclobutene) , 曰 曰 s 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 271 The electronic component, wherein the material of the polymer layer comprises an epoxy-based material, such as the electronic component of claim 268, wherein the thickness of the polymer layer is 274. The electronic component of claim 263, further comprising a polymer layer on the resistive element. 275. The electronic device of claim 274 The component, wherein the material of the Si compound layer comprises a polyfluorene (P〇lyimide). The electronic component of claim 274, wherein an opening is in the polymer layer and the Resistance element. 2 77. An electronic component comprising: a semiconductor substrate; and a φ-resistive component on the semiconductor substrate, wherein the resistive component is made of chromium. 278. The electronic component of claim 277. The material of the semiconductor substrate includes the stone element. The electronic component of claim 277, further comprising a thin film circuit layer and a protective layer, wherein the thin film circuit layer is located in the semiconductor 1278984 -- Case No. 93111 wn__ψ 曰 修正 Correction __ VI. Scope of Patent Application On the substrate, the protective layer is on the film line. The resistance element is on the protective layer. 280. The electronic component of claim 279, wherein the protective layer comprises an insulating layer that is closest to the top of the electronic component and contains one of the nitrogen bismuth compounds. 281. The electronic component of claim 279, wherein the protective layer comprises an insulating layer that is closest to the top of the electronic component and contains one of the oxonium compounds. 282. The electronic component of claim 279, further comprising a polymer layer on the protective layer, the resistive element being on the polymer layer. The electronic component of claim 282, wherein the material of the polymer layer comprises p〇lyimide. 284. The electronic component of claim 282, wherein the material of the polymer layer comprises phenylcyclobutene (BenZ〇Cycl〇bUtene, BCB) 〇285. An electronic component, wherein the material of the polymer layer comprises a polyarylene ether. 286. The electronic component of claim 282, wherein the material of the polymer layer comprises an epoxy-based material. 287. The electronic component of claim 282, wherein the polymer layer has a thickness between 2 microns and 15 microns. 288. The electronic component described in claim 277, also included Page 67 1278984 _ Case No. 93118830_Yearly VI. Scope of Application 曰 Amendment A polymer layer is placed on the resistive element. 289. The electronic component of claim 288, wherein the material of the polymer layer comprises polyimine (1) 〇17丨1111 (16). The electronic component of claim 288, wherein an opening is in the polymer layer and the resistive element is exposed. An electronic component comprising: a semiconductor substrate; and a resistive component on the semiconductor substrate, wherein the material of the resistive component I comprises nitrogen. 292. The electronic component of claim 291, wherein the material of the semiconductor substrate comprises germanium. The electronic component of claim 291, further comprising a thin film circuit layer and a protective layer, the thin film circuit layer being on the semiconductor substrate, the protective layer being located on the thin film circuit layer The resistor element is located on the protective layer. The electronic component of claim 293, wherein the protective layer comprises an insulating layer which is closest to the top of the electronic component and contains a nitrogen compound. Φ 295. The electronic component of claim 293, wherein the protective layer comprises the electronic component that is closest to the top of the electronic component and contains oxygen oxalate 296. And a polymer layer is disposed on the protective layer, and the resistive element is on the N-package layer. In the aggregation Page 68 1278984 ---93111830__年月日日正正__ 6. Patent application scope 297. The electronic component described in claim 296, wherein the polymer layer material comprises polyimine ( P〇lyimide). 2 9 8 · The electronic component of claim 2, wherein the material of the polymer layer comprises phenylcyclobutene (BenZ〇Cycl〇bUtene, BCB) 〇299. The electronic component of the item, wherein the material of the polymer layer comprises a polyarylene ether. 30. The electronic component of claim 296, wherein the material of the K polymer layer comprises an epoxy resin based (ep〇xy_based) 301. The electronic component according to claim 296, Wherein the thickness of the polymer layer is between 2 microns and 丨5 microns. 30. The electronic component of claim 291, further comprising a polymer layer on the resistive element. 303. The electronic component of claim 3, wherein the material of the polymer layer comprises polyijjjide. 3. The electronic component of claim 3, wherein an opening is in the polymer layer, and the resistive component is exposed. An electronic component comprises: a semiconductor substrate And a transformer is located on the semiconductor substrate. 3. The electronic component of claim 3, further comprising a polymer layer disposed between the transformer and the semiconductor substrate. 307. The electronic component of claim 306, wherein Page 69 1278984 The material of the t σ layer includes polyimide. _ X 308. The electronic component of claim 3, wherein the S i σ layer &lt; material comprises Benzene citronbutene (BCB). The electronic component of claim 306, wherein the material of the polymer layer comprises a polyarylene ether. The electronic component of claim 306, wherein the material of the polymer layer comprises an epoxy based (ep〇xy_based) # material. 311. The polymer 312 is included on a film substrate, and the protective layer is 313. One of the protective layers is 314. One of the protective layers is 315. The semiconductor 316 is as described in claim 306. An electronic component in which the thickness of the layer is between 2 microns and 150 microns. The electronic component of claim 305, further comprising a circuit layer and a protective layer, wherein the thin film circuit layer is located on the thin film circuit layer of the semiconductor, and the transformer is located in the The electronic component of claim 3, wherein the electronic component is closest to the top and contains a nitrogen ruthenium compound edge layer. The electronic component of claim 312, wherein the electronic component is closest to the top and contains an oxonium rim layer. The material of the electronic element substrate as described in claim 305 includes dreams. For example, the electronic component described in claim 305, wherein 1278984 Case No. 93111830 A_L· 曰 Amendment VI. Scope of Application Patent One coil of the transformer includes a metal layer. The material of the metal layer includes gold. The electronic component, wherein between the micrometers. The electronic component, wherein the metal component is under the metal layer, and the metal component of the metal layer comprises the electronic component, wherein between the micrometers. The electronic component, wherein the metal layer is under the metal layer, and the adhesive layer is 317. The thickness of the metal layer is from 1 micrometer to 2 0 3 1 8 according to the patent application scope. The coil further includes an adhesion/barrier layer, and the material of the barrier/barrier layer comprises a titanium-tungsten alloy. 319. If the patent application scope is 305|one coil of the transformer comprises a metal layer, copper 0 320. The thickness of the metal layer is between 3 micrometers and 20 3 as claimed in claim 319. The 319 coils also include an adhesive/barrier layer, and the material of the barrier/barrier layer includes titanium. Page 71 1278984 _ Case No. 93111830_ Year Month Day Amendment 6. Designated Representative Diagram (1) The representative figure of this case is: Figure 10 (II), the representative symbol of the representative figure of this case is a simple description: 10: 矽 Base 14: Metal/dielectric layer 16: electronic contact 18: protective layer 20: polymer layer 50: connecting metal 5 2: bump 5 3: solder 54 · finished electronic component read Page 3